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DC1319B-A Linear Technology BOARD EVAL LED DRIVER LT3756 visit Linear Technology - Now Part of Analog Devices
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DC1160A Linear Technology BOARD EVAL LED DRIVER LT3518 visit Linear Technology - Now Part of Analog Devices
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LTC4358IDE#TRPBF Linear Technology LTC4358 - 5A Ideal Diode; Package: DFN; Pins: 14; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LTC4358IDE#PBF Linear Technology LTC4358 - 5A Ideal Diode; Package: DFN; Pins: 14; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy

30D2 diode

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30D2 diode

Abstract: 30D1 diode DIODE FEATURES Type : 30D2 OUTLINE DRAWING * Low Forward Voltage drop , VRSM IO IF(RMS) IFSM Tjw Tstg 150 1.7 3.0 Approx Net Weight:1.24g 30D2 200 400 Ta=40°C *1 50Hz Half , : Without Fin or P.C. Board *2 : With Cu Fin (20 x 20 x 1 t, L = 5mm, Both Sides) 30D2 OUTLINE DRAWING (Dimensions in mm) FORWARD CURRENT VS. VOLTAGE 30D1/30D2/30D4 50 INSTANTANEOUS , INSTANTANEOUS FORWARD VOLTAGE (V) AVERAGE FORWARD POWER DISSIPATION 30D1/30D2/30D4 D.C. 4.0 AVERAGE
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30D4 diode

Abstract: 30D1 diode DIODE FEATURES Type : 30D4 OUTLINE DRAWING * Low Forward Voltage drop , DRAWING (Dimensions in mm) FORWARD CURRENT VS. VOLTAGE 30D1/30D2/30D4 50 INSTANTANEOUS , INSTANTANEOUS FORWARD VOLTAGE (V) AVERAGE FORWARD POWER DISSIPATION 30D1/30D2/30D4 D.C. 4.0 AVERAGE , 30D1/30D2/30D4 AVERAGE FORWARD CURRENT (A) 2.5 D.C. HALF SINE WAVE 2.0 1.5 1.0 0.5 , TEMPERATURE With Cu Fin (L=5mm,20×20×1t,Both Sides) 5 D.C. 30D1/30D2/30D4 AVERAGE FORWARD CURRENT (A
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30D1 diode

Abstract: 30D2 diode DIODE Type30D2 OUTLINE DRAWING Construction: Diffusion Type Rectifier Diode Application: For General Use / Maximum Ratings , 150 30D2 200 400 Ta=40 *1 Ta=61 *2 4.71 50 Hz , 1, Half Sine Wave,1cycle,Nonrepetitive , CURRENT VS. VOLTAGE 30D1/30D2/30D4 50 INSTANTANEOUS FORWARD CURRENT (A) 20 10 5 2 1 , ) AVERAGE FORWARD POWER DISSIPATION 30D1/30D2/30D4 D.C. 4.0 AVERAGE FORWARD POWER DISSIPATION (W
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30D1 diode

Abstract: diode 30D1 DIODE Type30D1 OUTLINE DRAWING Construction: Diffusion Type Rectifier Diode Application: For General Use / Maximum Ratings , CURRENT VS. VOLTAGE 30D1/30D2/30D4 50 INSTANTANEOUS FORWARD CURRENT (A) 20 10 5 2 1 , ) AVERAGE FORWARD POWER DISSIPATION 30D1/30D2/30D4 D.C. 4.0 AVERAGE FORWARD POWER DISSIPATION (W , AVERAGE FORWARD CURRENT VS. AMBIENT TEMPERATURE Without Fin or P.C. Board 3.0 30D1/30D2/30D4 AVERAGE
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30D4 diode

Abstract: 30D1 diode DIODE Type30D4 OUTLINE DRAWING Construction: Diffusion Type Rectifier Diode Application: For General Use / Maximum Ratings , CURRENT VS. VOLTAGE 30D1/30D2/30D4 50 INSTANTANEOUS FORWARD CURRENT (A) 20 10 5 2 1 , ) AVERAGE FORWARD POWER DISSIPATION 30D1/30D2/30D4 D.C. 4.0 AVERAGE FORWARD POWER DISSIPATION (W , AVERAGE FORWARD CURRENT VS. AMBIENT TEMPERATURE Without Fin or P.C. Board 3.0 30D1/30D2/30D4 AVERAGE
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30D1 diode

Abstract: 30d1 DIODE FEATURES Type : 30D1 OUTLINE DRAWING * Low Forward Voltage drop , DRAWING (Dimensions in mm) FORWARD CURRENT VS. VOLTAGE 30D1/30D2/30D4 50 INSTANTANEOUS , INSTANTANEOUS FORWARD VOLTAGE (V) AVERAGE FORWARD POWER DISSIPATION 30D1/30D2/30D4 D.C. 4.0 AVERAGE , 30D1/30D2/30D4 AVERAGE FORWARD CURRENT (A) 2.5 D.C. HALF SINE WAVE 2.0 1.5 1.0 0.5 , TEMPERATURE With Cu Fin (L=5mm,20×20×1t,Both Sides) 5 D.C. 30D1/30D2/30D4 AVERAGE FORWARD CURRENT (A
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Diode 30D2

Abstract: 30D2 DIODE 30D2 Type : OUTLINE DRAWING FEATURES * Low Forward Voltage drop * Low Reverse Leakage Current * High Surge Capability Maximum Ratings Approx Net Weight:1.24g Rating Symbol Repetitive Peak Reverse Voltage Non-repetitive Peak Reverse Voltage 30D2 VRRM VRSM Average Rectified Output Current IO RMS Forward Current IF(RMS) Surge Forward Current IFSM , 50 0.93 80 34 Unit µA V °C/W 30D2 OUTLINE DRAWING (Dimensions in mm) Nihon
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Abstract: 30D1 30D2 30D4 3 A /10 0 ~ 4 0 0 V SILICON RECTIFIER DIODE FEATURES 5.8(.23)DIA » Low Forward Voltage Drop ® Low Reverse Leakage Current 1.5(.059) DIA 1.3(.051) ° High Surge Capability 21(.83) MIN 10(.39) MAX 1.5(.059) DIA 1.3(.051) 2K.83) . MIN Dimensions in mm (Inches) Approx. Net Weight: 1.24 Grams MAXIMUM RATINGS \ type 30D1 Voltage Rating 30D2 30 D 4 , 7H5 b is 30D1 30D2 30D4 FIG.I-FORWARD VOLTAGE VS. FORWARD CURRENT FIG.*-AVERAGE FORWARD -
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S613

Abstract: SILICON RECTIFIER DIODE FEATURES ° Low Forward Voltage Drop ° Low Reverse Leakage Current · High Surge Capability 3A/100- 400V 30D1 30D2 30D4 MAXIMUM RATINGS \ Voltage Rating Symbol\^ Repetitive Peak Reverse Voltage Non-Repetitive Peak Reverse Voltage Electrical Rating VRRM VRSM Symbol 100 250 type Approx. Net Weight: 1.24 Grams 30D 1 30 D 2 200 400 Condition 180° sinusoidal wave , . Mhon ttfw Bectronlc i Corporation 612 30D1 30D2 30D4 F IG 1 -F O R W A R D V O L T A G E
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30D1 diode

Abstract: 30D4 diode SILICON RECTIFIER DIODE 3A/100~400V 30D1 30D2 30D4 FEATURES â'¢ Low Forward Voltage Drop ° Low Reverse Leakage Current ° High Surge Capability W- 5.8(.23)DIA 1.51059) 1.3C051) DIA * 1.5(.059) 1.3(.051) DIA 21(.83) MIN 10(.39) MAX 2K.83) . MIN MAXIMUM RATINGS Dimensions in mm (Inches) Approx. Net Weight: 1.24 Grams Voltage Rating \type Symbol\. 30D1 3 0 D 2 3 0 D 4 Unit , Material Copyrighted By Its Respective Manufacturer 30D1 30D2 30D4 FIG I-FORWARD VOLTAGE VS. FORWARD
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30D1 diode 30D4 diode 30D1 30D2 30D4

30d2

Abstract: DIODE Type30D2 OUTLINE DRAWING Construction: Diffusion Type Rectifier Diode Application: For General Use / Maximum Ratings Approx Net weight:1.24g Rating Repetitive Peak Reverse Voltage Nonrepetitive Peak Reverse Voltage Average Rectified Output Current RMS Forward Current Surge Forward Current Operating , 150 30D2 200 400 Ta=40 *1 Ta=61 *2 4.71 50 Hz , 1, Half Sine Wave,1cycle,Nonrepetitive
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motorola diode cross reference

Abstract: replacement UF5402 CROSS REFERENCE Schottky Barrier Diode -Single MOTOROLA 1N5817 IR G I 1N5817 AK03 AK04 AK06 AK09 EK03 EK04 EK06 EK09 1N5818 1M5819 MBR150 MBR160 MBR190 MBR1100 11DQ03 11DQ04 11DQ05 11DQ06 11DQ09 11DQ10 SB130 SB140 SB150 SB160 SB190 SB1100 RK13 RK14 RK16 RK19 RK43 RK44 RK46 RK49 SFPB-52 SANKEN NIEC , Diode MOTOROLA IR G I GF1B GF1D GF1G GF1J 10J1 10J2 10J4 S3B S3D S3G AMOIZ AMOl AMOIA EMOIY EMOIZ EMOl , 1N4007 10E1 10E2 10E4 10E6 10E8 20E1 20E2 20E4 20E6 20E8 20E10 30D1 30D2 30D4 DATA Page 476 476 476 476
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FEN30DP 11ES2 motorola diode cross reference replacement UF5402 IR 30D1 diode IR 30D1 10DF2 "cross reference" 1n4007 "direct replacement" 11EQS02L 11EQS03 11EQS04 11EQS06 11EQS09 11EQ03

18b2 diode

Abstract: BA41-00671A Sensor Layout Guidelines. Place the Thermal Sensor close to a remote diode. Keep traces away from high
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BA41-00659A BA41-00671A 18b2 diode 30B4 B20 C875 B2 diode 5.1B3 DIODE 20B2 533/667MH RC410MD SB450 RC410MD/RC410ME

DIODE 20B2

Abstract: CIS10J270NC diode. Keep traces away from high voltage (+12V bus) Keep traces away from fast data buses and CRT
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RS600ME BA41-00714A CIS10J270NC ELM7S08WS BA41-0071 KBC3_SUSPWR 28B3 SB600 BA41-00715A MAX8550 PLLVDD18

F10P100

Abstract: 10EF1 BecTrortcs Corporation SCHOTTKY BARRIER DIODE MODULE S c h o ttk y B a rrie r Diode-Single (cont'd) C , Corporation SCHOTTKY BARRIER DIODE MODULE S c h o ttk y B a rrie r Diode-Dual (cont'd) C ase Style ISO , Electronics Corporation 16 Schottky Barrier Diode Module Case Style M ODULE VFM (A) (V , Recovery Diode Module C ase S tyle M o d u le (Iso lated Base) Io (A) V FM (V) tr r (ns) V , 20E10 610 5.8DIA , 3.0 0.93 100 200 400 30D1 30D2 30D4 612 10 1.4DIA I© : H a lf sine
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F10P100 10EF1 60KQ10B C16P04Q F10KF20B 12MF30 11EQS03L 11EQ04 11EQ05 11EQ06 11EQ09 11EQ10

schematic diagram hdmi to rca

Abstract: GFX SE DIODE .3V_AUX D Thermal Monitor P5.0V P3.3V_AUX Place the Thermal Sensor close to a remote diode. Keep
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BA41-00745A schematic diagram hdmi to rca GFX SE DIODE LE88CLPM NH82801HEM TP16355 RAS 0510 SUN HOLD ALC262 LED500 LED505 LTST-C193TBKT-AC LED504

RAS 0510 SUN HOLD

Abstract: sun hold RAS 0510 .3V_AUX Place the Thermal Sensor close to a remote diode. Keep traces away from high voltage (+12V bus) Keep
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sun hold RAS 0510 SUN HOLD, RAS 0510 NH82801HBM bd3 c531 diode U519-1 27B2 diode BA41-XXXXX TP18597 TP18598 TP18599 TP18600 TP18537
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