NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: Product Specification R1005300L R1005300L Si Reverse, low current, 5  100MHz, 30.8dB typ. Gain @ 100MHz, 140mA max. @ 24VDC 24VDC FEATURES · · · · · · Excellent linearity Superior return loss , R1005300L R1005300L Si Reverse, low current, 5  100MHz, 30.8dB typ. Gain @ 100MHz, 140mA max. @ 24VDC 24VDC , Si Reverse, low current, 5  100MHz, 30.8dB typ. Gain @ 100MHz, 140mA max. @ 24VDC 24VDC I U 123 5 7 , , low current, 5  100MHz, 30.8dB typ. Gain @ 100MHz, 140mA max. @ 24VDC 24VDC DEFINITIONS Data Sheet ... | Original |
4 pages, |
R1005300L Premier Devices 24VDC R1005300L abstract |
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| Abstract: 8.2 7.2 VSWR Peak Gain 3.08dB Efficiency 71.22 % 2 2.5 3 6.2 5.2 4.2 )zHG ... | Original |
39 pages, |
lta6025 LTA-6025-2G4S3-B2 LTA-6025-2G4S3 LTA-6025-2G4S3-A1 LTA-6025-2G4S3-B1 LTA-6025 LTA-6025 abstract |
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| Abstract: 1.75dB to 1.25dB versus frequency · Gain = 32.7dB to 30.8dB at band edges. To extend the standard ... | Original |
12 pages, |
RF3866PCK-410 QFN20 GSM900 RF3866 RF3866 abstract |
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| Abstract: ) 1.5 3 Total efficiency (Lo) T(Lo) 27 35 % Pout GSM = 30.8dBm, Vtxlo = ... | Original |
25 pages, |
pf08109 DCS1800 dual gsm repeater PF08109B GSM repeater circuit datasheet abstract |
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| Abstract: Total efficiency (Lo) hT (Lo) 27 35 % Pout_GSM=30.8dBm , Vtxlo=2.4V Vapc_GSM=eontrol *2 Output power ... | OCR Scan |
16 pages, |
TCA 345 pf08109 j131 PF08109B-TB ic PF08109B PF08109B H9908010NS H9908010NS abstract |
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| Abstract: a +6dBm input signal to +30.8dBm output, drawing only 420mA from a single positive supply. ... | Original |
4 pages, |
TA0013 RF2131 trw rf transistor TA0013 abstract |
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| Abstract: qualcomm msm 6000 6.3 UTE RF840 TCXO 16MHZ RF2517 Qualcomm 8200 preamplifier proton 1100 msm 8660 ecu repair qualcomm msm 8660 1 2 3 4 5 6 7 ! " 8 # 9 ! 10 11 $ 12 # % 13 & ' (& 14 $ ) 15 *) 16 # RF2043 RF2043 General Purpose Amplifier . . . . . . . . . . . . . . . . RF2044 RF2044 General Purpose Amplifier . . . . . . . . . . . . . . . . RF2045 RF2045 General Purpose Amplifier . . . . . . . . . . . . . . . . RF2046 RF2046 General Pu ... | Original |
1536 pages, |
free mic transmiter diagram cordless receiver 49MHz qualcomm cdma chipset 6000 series RF2114 RF2123 RF2046 RF2713 TRW 5030 rf transistor datasheet abstract |
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| Abstract: Operation · Single Voltage Supply · High Output Intercept: +30.8dBm typ. at 24 850 MHz · · 18 ... | Original |
7 pages, |
SGA-5325 EDS-100967 marking A53 mmic TRANSISTOR MARKING A53 SGA-5325 abstract |
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| Abstract: drops at 4.0V. Over 70% power-added efficiency can be achieved at +30.8dBm with 4.8V and +8dBm input , the device, and has increased from 5.6pF to 6.2pF. This retuning allows over +30.8dBm of output power ... | Original |
10 pages, |
RF2131 schematic diagram 48v battery charger 48v battery charger schematic diagram schematic diagram 48v dc charger schematic diagram 48V power supply schematic diagram 48v charger RF2131 abstract |
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| Abstract: sizes of ground-plane. (Gain at zenith varies from Â3.08dBic without ground-plane to +2.14dBic over ... | Original |
10 pages, |
rectangular microstrip patch Antenna hybrid coupler 3dB 180 design of Circular Patch Antenna circular microstrip patch antenna datasheet abstract |
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| Abstract: Ube Electronics Limited Product Catalog Title Dielectric Filter Application Band Pass Filter for XM Radio UBE P/N: Center Frequency (Fo) Band Width Insertion Loss Ripple VSWR Attenuation Fo +/- 230 MHz Document No. FS-058-01 FS-058-01 Sheet 1/2 UF2339M249 UF2339M249 UF2339M249 UF2339M249 2338.75 MHz +/- 6.25 MHz 1.25 dB 0.05 dB 1.27 ( 2332.5 to 2345 MHz) 30.8 dB ( 25 dB min ) ( 2.0 dB max ) ( 1.0 dB max ) ( 2.0 max ) Note: Typical Value, (-);Over Temp.(-40°C to 85°C) Outside ... | Original |
2 pages, |
UF2339M249 FS-058-01 FS-058-01 abstract |
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| Abstract: Digital Step Attenuator ZX76-31-SN ZX76-31-SN+ Typical Performance Curves Thru Loss Step Attenuation 1.0 0 10 Step Attenuation (dB) 5 1.4 Thru Loss (dB) 1.2 1.6 1.8 2.0 2.2 2.4 15 20 25 30 35 2.6 2.8 1 dB Attenuation 40 45 3.0 8 dB Attenuation 16 dB Attenuation 31 dB Attenuation 50 0 200 400 600 800 1000 1200 1400 1600 1800 2000 2200 2400 2600 2800 3000 0 200 400 600 Frequency (MHz) 800 1000 1200 1400 1 ... | Original |
1 pages, |
datasheet abstract |
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| Abstract: Digital Step Attenuator ZX76-31-PN ZX76-31-PN Typical Performance Curves Thru Loss Step Attenuation 1.0 0 10 Step Attenuation (dB) 5 1.4 Thru Loss (dB) 1.2 1.6 1.8 2.0 2.2 2.4 15 20 25 30 35 2.6 2.8 1 dB Attenuation 40 45 3.0 8 dB Attenuation 16 dB Attenuation 31 dB Attenuation 50 0 200 400 600 800 1000 1200 1400 1600 1800 2000 2200 2400 2600 2800 3000 0 200 400 600 Frequency (MHz) 800 1000 1200 1400 16 ... | Original |
1 pages, |
datasheet abstract |
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| Abstract: E DIOTEC ELECTRONICS CORP SflE D DIOTEC ELECTRONICS CORP. 18020 Hobart Blvd., Unit B Gardena, CA 90248 Tel.: (310)767-1052 Fax: (310)767-7958 IC 3 AMP SILICON BRIDGE RECTIFIERS FEATURES: • Rating to 1000V PRV • Surge overload rating to 50 Amps peak • Ideal for printed circuit board • Lead solderable per MIL-STD-202 MIL-STD-202, method 208 • Leads: Silver-plated copper • Plastic material has UL llammability classification 94V-0 • Weight: 3.36 grams • Mounting: Through hole for #6 screw mounting ... | OCR Scan |
2 pages, |
TI 945 DB300 2sa 945 adb 420 datasheet abstract |
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| Abstract: DEVELOPMENT DATA This data sheet contains advance Information and specifications are subject to change without notice. bb53c131 G03D2bb S7M HAPX BGY110B BGY110B N AMER PHILIPS/DISCRETE blE D UHF AMPLIFIER MODULE The BGY110B BGY110B is a four-stage UHF amplifier module designed primarily for hand-held transmitting equipment, operating from a nominal 6 V power supply. The module consists of four npn silicon planar transistor chips mounted on a metallized ceramic substrate, together with matching and bias ci ... | OCR Scan |
2 pages, |
SOT-246 BGY110b BGY110B BGY110B abstract |
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| Abstract: DEVELOPMENT DATA â- "53131 DD3D5b4 7T1 - This data sheet contains advance information and I I BG Y110A Y110A specifications are subject to change without notice. I I _N AMER PHILIPS/DISCRETE blE D UHF AMPLIFIER MODULE The BGY110A BGY110A is a four-stage UHF amplifier module designed primarily for hand-held transmitting equipment, operating from a nominal 6 V power supply. The module consists of four npn silicon planar transistor chips mounted on a metallized ceramic substrate, together with matching and ... | OCR Scan |
2 pages, |
transistor 824 SOT-246 BGY110A Y110A Y110A abstract |
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| Abstract: DEVELOPMENT DATA 41E 5 83 7HD&2b ODSaMS^ T â- PHIN This data sheet contains advance Information and I I BG Yi10B specifications are subject to change without notice. PHILIPS INTERNATIONAL T^yf-of-of UHF AMPLIFIER MODULE The BGY110B BGY110B is a four-stage UHF amplifier module designed primarily for hand-held transmitting equipment, operating from a nominal 6 V power supply. The module consists of four npn silicon planar transistor chips mounted on a metallized ceramic substrate, together with match ... | OCR Scan |
2 pages, |
NPN planar RF transistor BGY110B BGY110B abstract |
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| Abstract: SAW Components Vestigial Sideband Filter M 4950 M 45,75 MHz Data Sheet Standard Plastic package SIP5K q M/N Features q IF filter for antenna converters q Full transmission of vestigial sideband and sound carrier q Constant group delay Terminals q Tinned CuFe alloy Dimensions in mm, approx. weight 1,0 g Pin configuration 1 2 3 4 5 Input Input - ground Chip carrier - ground Output Output Type Ordering code M 4950 M B39458-M4950-M100 B39458-M4950-M100 Mark ... | Original |
4 pages, |
B39458-M4950-M100 datasheet abstract |
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| Abstract: DEVELOPMENT DATA L»1E ® â- ?H0flBt 0020457 h â- PHIN This data sheet contains advance information and | I BGY110A BGY110A specifications are subject to change without notice. | I -PHILIPS INTERNATIONAL - r-7? ~o?-o/ UHF AMPLIFIER MODULE The BGY110A BGY110A is a four-stage UHF amplifier module designed primarily for hand-held transmitting equipment, operating from a nominal 6 V power supply. The module consists of four npn silicon planar transistor chips mounted on a metallized ceramic substrate, together ... | OCR Scan |
2 pages, |
NPN planar RF transistor BGY110A BGY110A abstract |
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| CONFIG0 ; Config Byte 0 00FFF9 00FFF9 00FFF9 00FFF9 FF 308 DB CONFIG1 www.datasheetarchive.com/download/64738351-30075ZC/c251g1d_i2c.zip (START251.LST) |
ARM | 20/03/2003 | 41.44 Kb | ZIP | c251g1d_i2c.zip |
| 6f864fc54d9bd binutils/NEWS binutils/README 949ae831863e3d2d546 www.datasheetarchive.com/download/42652172-393173ZC/mplabalc30v2_05.tgz |
Microchip | 09/11/2006 | 11568.47 Kb | TGZ | mplabalc30v2_05.tgz |