NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: fully static mask programmable ROM organized 4,194,304x16 bit. It is fabricated using silicongate CMOS , A21 X BUFFERS AND DECODER . . . . . . . . MEMORY CELL MATRIX (4,194,304x16) 39 ... | Original |
4 pages, |
4000B cmos 4000BD 4000B-DC 42-DIP-600 4000B-DC abstract |
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| Abstract: The K3N7V(U)4000B-DC 4000B-DC is a fully static mask programmable ROM organized 4,194,304x16 bit. It is , MEMORY CELL MATRIX (4,194,304x16) 39 A10 A5 5 38 A11 A4 6 37 A12 A3 7 36 ... | Original |
3 pages, |
4000B-DC 42-DIP-600 4000B-DC abstract |
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| Abstract: The K3N7V(U)4000C-DC 4000C-DC is a fully static mask programmable ROM organized 4,194,304x16 bit. It is , MEMORY CELL MATRIX (4,194,304x16) 39 A10 A5 5 38 A11 A4 6 37 A12 A3 7 36 ... | Original |
3 pages, |
4000C-DC 42-DIP-600 4000C-DC abstract |
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| Abstract: static mask programmable ROM organized 4,194,304x16 bit. It is fabricated using silicon-gate CMOS , X BUFFERS AND DECODER . . . . . . . . MEMORY CELL MATRIX (4,194,304x16) 39 A10 ... | Original |
4 pages, |
KM23V64000B 42-DIP-600 KM23V64000B abstract |
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| Abstract: Preliminary HY5Y5A6D(L/S)F(P)-xF 4Banks x 4M x 16bits Synchronous DRAM DESCRIPTION The Hynix Mobile SDR is suited for non-PC application which use the batteries such as PDAs, 2.5G and 3G cellular phones with internet access and multimedia capabilities, mini-notebook, handheld PCs. The Hynix HY5Y5A6D(L/S)F(P) is a 268,435,456bit CMOS Synchronous Dynamic Random Access Memory. It is organized as 4banks of 4,194,304x16. The Mobile SDR provides for programmable options including CAS latency of 1, 2 ... | Original |
25 pages, |
datasheet abstract |
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| Abstract: (4,194,304x16) 9 34 A15 A0 10 A21 . . . 11 DIP 33 A16 32 A20 VSS 12 Q0 ... | Original |
4 pages, |
KM23C64000-15 KM23C64000-12 KM23C64000 42-DIP-600 KM23C64000 abstract |
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| Abstract: MEMORY CELL MATRIX (4,194,304x16) 9 34 A15 A0 10 A21 . . . 11 DIP 33 A16 32 A20 ... | Original |
4 pages, |
K3N7C4000M-DC 42-DIP-600 K3N7C4000M-DC abstract |
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| Abstract: . . . . . MEMORY CELL MATRIX (4,194,304x16) 9 34 A15 A0 10 A21 . . . 11 ... | Original |
3 pages, |
K3N7C4000B-DC 42-DIP-600 K3N7C4000B-DC abstract |
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| Abstract: . . . . . MEMORY CELL MATRIX (4,194,304x16) 9 34 A15 A0 10 A21 . . . 11 ... | Original |
3 pages, |
K3N7C4000C-DC 42-DIP-600 K3N7C4000C-DC abstract |
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| Abstract: (4,194,304x16) 9 34 A15 A0 10 A21 . . . 11 DIP 33 A16 32 A20 VSS 12 Q0 ... | Original |
4 pages, |
KM23C64000-15 KM23C64000-12 KM23C64000-10 KM23C64000 42-DIP-600 KM23C64000 abstract |
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| Abstract: MEMORY CELL MATRIX (4,194,304x16) 9 34 A15 A0 10 A21 . . . 11 DIP 33 A16 32 A20 ... | Original |
4 pages, |
KM23C64000B-12 KM23C64000B-10 KM23C64000B 42-DIP-600 KM23C64000B abstract |
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