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ISL73096RHVX Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73127RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73128RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73096RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
HFA3102B96 Intersil Corporation C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, MS-012AB, MS-012AB, 14 PIN visit Intersil
HS0-6254RH-Q Intersil Corporation 5 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, DIE-16 visit Intersil

30100 transistor

Catalog Datasheet MFG & Type PDF Document Tags

IKW40N120H3

Abstract: IKW40N60 anti-parallel diode Welding Inverter Full Bridge Two Transistor Forward [ www.infineon.com/igbt , Inverter Full bridge inverter Two Transistor Forward Major Home Appliance Product Type Diode , IGB01N120H2 1200 N 30-100 kHz TO-263 Hard HighSpeed2 1,3 2,2 0,06 0,08 IGP20N60H3 , 1200 N 30-100 kHz TO-252 Hard HighSpeed2 1,3 2,2 0,06 0,08 IGB30N60T 600 , 30-100 kHz TO-220 Hard HighSpeed2 1,3 2,2 0,06 0,08 IGP30N60H3 600 N
Infineon Technologies
Original
IKW40N120H3 IKW40N120T2 IHW40N60RF IKW40N60H3 IKW50N60T IKW75N60T IKW40N60 30100 transistor IKW25N120H3 welding inverter N60H3 N120H2 N120H3 N100T N120T2 IHW30N60T

PS2018

Abstract: PS2019 -237- LED LED- -Transistor without Base Connection m m m s x r â'¢ r 7 V , » 40* " 700* 20,'20 » a - - PS2018 80 6 150 40 80 » 4.0* -30-100 1.4/10 50* 3* 3* 50/5 0.3/10 , TLP519 60 50 6 5 100 30 50 120 150 1.5* 2.5* -30-100 1.35/10 if 30* 5* 5* â'" 65/10 100/10 - 0.8* - - , 1.0 - - TLP632 m .'£ 50 5 200 55 50 150 2.5" -30-100 1.3/10 30 6 6 50 0.4 0.8 6 - PC111L > -V - 7° 50 6 70 35 50 150 5 -30-100 1.4/20 30* 4* 3* - 50/5 0.2/20,1 1 80k h life PC113L » Â
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PS2008B PS2009B PS2019 TLP509 TLP532 P1063 TLP636 PS2008 PC724V

30100 transistor

Abstract: PS2101 PS2403-1 PS2403-2/-3/-4 a * 50 6 150 120 40 30 150 120 5 -30-100 1.3/1 50* 60* : 100/1 0.25/1,0.2 0.5 , 150 120 5 -30-100 ii 1.4/10 50* 3' 3* : 80/5 ii 0.3/10.2 0.5' ii _ _ -1,-2,-3,-411-tiltil 1,2,3,40» PS2101 a * 50 6 150 40 30 150 2 -30-100 1.4/10 50* 10* 10* - 50/5 0,3/10,2 0.5* - - 1 HB NJL5151D NJL5152D JRC 70 50 6 i; _ 35 50 ii 150 100 4 -30-100 1.5/20 35 ii 40/5 0.3/10,1 0.6 ii : : 1DU 1 Bit , 50 6 ii _ 35 50 ri 150 100 4 ii -30-100 ii 1.5/20 35 40/5 0.3/10,1 0.6 ii _ : 1MIà 1 0B.2MI1 2
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PS2401L-1 NJL5153D NJL5151M NJL5152M NJL5153M PC315 P525 pc355t TLP624 PS2401L-2/-3/-4

BH17

Abstract: CMX100D6 DO/DMO Product DMO063 Bipolar transistor output (DO) · FET ouput (DMO) · 1-3.0Amp · 360 VDC · DC Switching · Mini-SIP · DC control · Low profile package. Specification PDF Contact Us Find a Distributor Control Voltage Load Range Current 3-10 Volts DC 0-3 Amps DC Switching Voltage Type DC Load Voltage Turn On Range N/A 0-60 Volts DC Series CMX 3-10Amp · 0-60 , SPECIFICATIONS 1 CMX100D6 CMX200D3 3.0-10.0 Vdc 3.0-10.0 Vdc 3.0-10.0 Vdc 4.0-10.0 Vdc 300
Crydom
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E116950 BH17 CMX60D10 CMX60D5 3-10A

PF312M

Abstract: PS2002 LED-Darlington Transistor without Base Connection led-?- 'J > h > â'¢ 7 * h â'¢ -7 m [si m > P r"n LU LU LU tt « 8 * £ is m & ti n S l >k »1 2 :k «1  , * -20-100 -30-100 1.9/5 1.4/10 100" 50' 100* 80* 120* 80* 100/5 200/5 1.2/5,2.0 1.0/5,2.0 0.8* 0.5* li+M , - - 100 - - - - PS2012( 1 ) B % 80 - - - 200 - 4 -30-100 1.4 - - - - - - - - PF312M s±a LED-Darlington Transistor with Base Connection LED-^- U > h > â'¢ 7 * h â'¢ h =7 2 ) m m m
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PS2002B TLP570 PS2604 PS2654 PC715V PC716V PS2002 4N29 4N29A 4N32
Abstract: General Transistor Corporation CASE TO-66 lc(MAX) = 1-5A VcEO(SUS) â  40-425V PNP Power Transistors NPN Typ. No. 2N3740 2N3740A 2N3741 2N3741A 2N4898 2N4899 2N4900 2N5344 coinplMMnl 2N3766 2N3767 2N4910 2N4911 2N4912 (A) VCE(SAT) 0IC/IB (V0A/A) VBE ©IOVCE (VÃA/V) 60 60 BO BO 1 1 1 1 30-100 @.25/.1 30-100 @ .25/.1 30-100 @ .25/1 30-100 @ .25/. 1 .6 @ 1/125 .6 @ 1/125 .6 @ 1/.125 .6 @ 1/.125 1 @.25/1 1 @.25/1 1 @.25/1 1 @.25/1 -
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2N2877 2N2878 2N2879 2N2880 2N2B92 2N2B93

417900-207CG

Abstract: GV3000 GV3000/SE AC Drive Hardware Reference, Installation, and Troubleshooting 30-100 HP @ 230 VAC , . 2.3 30-100 HP GV3000/SE Drive Components and Locations . 2.4 Regulator , . A-1 Appendix B 30-100 HP GV3000/SE System Wiring Diagram . B-1 II GV3000/SE 230 VAC 30-100 HP Drive, Hardware Reference Version 6.04 List of , Table of Contents 2-1 9-2 III IV GV3000/SE 230 VAC 30-100 HP Drive, Hardware Reference
Rockwell Automation
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417900-207CG GV3000 HE-HGV3DN 2CA3000 reliance gv3000 software start up 2DB2010 D2-3417-1 H/300 RS-232

30100 transistor

Abstract: RURP3080 circuits thus reducing power loss in the switching transistor. PA C K A G IN G A V A ILA B IL ITY PART N U M BER RU RP3070 RU RP3080 RU RP3090 RU RP 30100 PACKAG E T 0 -2 2 0 A C T 0 -2 2 0 A C T 0 -2 2 0 A C TO-22QAC BR A N D RU R P 3070 R U R P 3080 R U R P 3090 R U R 30100 NO TE: W hen ordering, use , 125W R U R P 30100 1000V 1000V 1000V 30A 60A 300A 125W Peak R epetitive R everse V o lta g e , P 30100 TYP M AX 1 60 UN ITS V SY M B O L 1.80 1 80 1.80 1.60 V 1 1 1 - mA
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RURP3080 RURP3070 RURP3090 RURP30100

0103 MA transistor

Abstract: KRA226M KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA KRA221M-KRA226M EPITAXIAL PLANAR PNP TRANSISTOR HIGH CURRENT SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. FEATURES , KRA225M - - -7.2 KRA226M - - -3.6 Note : ^Characteristic of Transistor Only 1996. 9. 05 , -0.3 -0 - V0=-0.3V i I yTa=25*C Ta=-25*( 01 -0.1-0.3 -1 -3 -10 -30-100 INPUT ON VOLTAGE Vi(0N) (V) Eh fc W « ta o Eh P PL. Eh ¡3 o KRA226M Io - Vl(ON) .01 -0.1-0.3 -1 -3 -10 -30-100
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KRA221M KRA222M KRA223M KRA224M 0103 MA transistor 224M 226M

PS2004B

Abstract: PS2004 -253â'" LED-Darlington Transistor with Base Connection LED-2*â'" ') > h > â'¢ 7 * h â'¢ h 7 v-^xi! m m m ni m LU « ± » Kl fi « tt 1 * «I 2 * M £ ft 1 * M 2 * M 1 * - , /5 1.2/5,2.0 0.8* " - PS2014 80 6 150 40 » 150 4.0" -30-100 1.4/10 50* 120* 120* - 1000/1 1.0/5 , 200 - 4 -30-100 1.4 - - - - - - - - PF312M s±a LED-Darlington Transistor with Base Connection LED-^- U > h > â'¢ 7 * h â'¢ h =7 2 ) m m m
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PS2004B MFCD850 FCD850 FCD855 FCD860 PS2004 PS2004B IC 4N30 4N33 FCD865

0103 MA transistor

Abstract: KRA223M SEMICONDUCTOR TECHNICAL DATA KRA221M-KRA226M EPITAXIAL PLANAR PNP TRANSISTOR HIGH CURRENT SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. FEATURES * With Built-in Bias , -7.2 KRA226M - - -3.6 Note : ^Characteristic of Transistor Only 1996. 9. 05 Revision No : 1 , -0.1-0.3 -1 -3 -10 -30-100 INPUT ON VOLTAGE VI(ON) (V) H £ H « « U H P PU Eh £ o -500 -100 -50 , =-25"C T " -j- | 1 -0.01 -0.1-0.3 -1 -3 -10 -30-100 INPUT ON VOLTAGE Vi(0N) (V
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30Q10 T0-92M

1S955

Abstract: IC 1458 PNP SILICON TRANSISTOR 2SA1458 DESCRIPTION The 2SA1458 is designed for general purpose amplifier and high speed switching applications. FEATURES â'¢ High Frequency Current Gain. â'¢ High Speed , NEC 2SC3731 NPN transistor. ABSOLUTE MAXIMUM RATINGS (Ta = 25 °C) Maximum Temperatures Storage , -3.0 -10 -30-100 Ir-Collector Current-mA ra
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1S955 IC 1458 cb-40 nec VCC--30 PWS300

TIL 815

Abstract: PC315 /16, 2.0 - - - Dual LED-Darlington Transistor without Base Connection , ) max typ* (its) min typ* (MHz) PC815,825'835/845 50 6 70 35 80 150 5* -30-100 1.4/20 250 300 250 - , 3D15 3Q15 50 6 70 35 80 150 2.5* -30-100 1.4/20 250 300 250 - 600 1 1/20,1 1.0 - - 1/2/4 [olì» 1 ; i
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PS2502-1 PS2502-2 PS2562-1 PS2562 TIL 815 lk 815 OC68

MC 151 pnp

Abstract: 05Z5 General Transistor Corporation PNP Power Transistors CASE TO-66 lc(MAX) = 1 -5 A VcEO(SUS) = 40-425V Typ* No. NM complMMnl VCEO , Is 1 MC (A©V) * (MHD ton 0MB (|i*0A/A) tOFFSIOIB 0«©A/A) 2N3740 2N3766 60 1 30-100 0.25/.1 .6 @ 1 , 1.5 017 4 2N3741 2N3767 B0 1 30-100 0 .25/. 1 .6 0 1/.125 1 0.25/1 .1 0 80 25 1.5 0 17 4 2N3741A 80 1 30-100 0.25/.1 .6 0 1/.125 1 0 .25/1 .0001 © 80 25 1.50 17 4 2N4698 2N4910 40 1 20-100 © .5
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MC 151 pnp 05Z5 2N5345 2N5954 2N6374 2N5955 2N6373 2N5956

tone control circuit

Abstract: 30100 transistor SI- I I25HD Absolute Maximum Rating iTa-25"C> Characteristics Rating Condition* Supply Voltage (V) Vcc ±35 -30-100 Heat Sink Temperature -30- 120 Alio n able Output . . CL . -r- sec) ts Short Time 2.0 Vcc- ± 3SV. P*-25W. 1 - UHx. Specified Power Supply re> -n 150 Junction Temperature of Power Transistor Cc/Wi â'ž 3.3 max- Between Junction of Power Transistor and Heat S*ik Electrical Characteristics suuuiLmui vrr rh*.».»> Ta-2S"C 25W Dual channel Amp with tone control circuit installable in
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tone control circuit pbw resistor

30100 transistor

Abstract: MTE1100 MARKTECH INTERNATIONAL 1ÃE D â  57^1,55 OGDQMOb Ã â  PHOTO TRANSISTOR -rn-u MTD6100 SILICON NPN EPITAXIAL PLANAR APPLICATIONS â'¢ OPTICAL SWITCH â'¢ TAPE, CARD READERS â'¢ VELOCITY SENSOR FEATURES â'¢ High Sensitivity: l|_ = 250/jA (Typ.). â'¢ Spectrally and Mechanically Matched , §/°C -2.0 mW/°C Operating Temperature Range Topr -20-75 °c Storage Temperature Range Tstg -30-100 , QQQ040? T â  PHOTO TRANSISTOR -6 / Pcâ'" Ta lo-T» 'l-~E AMBIENT TEMPERATURE Ta ("CI HAOIANT
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MTE1050A MTE1100 MTE2050 MTE1110 VCE-24V RL-100

2N2692

Abstract: 2n3718 GENERAL TRANSISTOR CORP 54E D 3^söddi ciaooom a â  General Transistor Corporation 216 WEST , 40-100V 4 GENERAL TRANSISTOR CORP 24E D â  B^SflOGl 00000^5 T â  T^JS-^/ General Transistor , -39 IC(MAX) S 0.05-1 OA : VcEO(SUS) =s 40-800V GENERAL TRANSISTOR CORP 2ME D abacial QQOODbt. i 7^33-0/ General Transistor Corporation 216 WEST FLORENCE AVENUE INGLEWOOD, CALIFORNIA 90301 (213) 673-8422 â , ® MB (lit® A/A) tOFF® IC/IB (|i*® AfA) 2N3740 2N3766 60 1 30-100 @ .26/.1 ,6©1/.125 1 ©.25/1 ,1
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2N3713 2N3790 2N3714 2N3791 2N3715 2N3716 2N2692 2n3718 Maa 325 2N6378 2N504S 2N1495 2N37B9

2n706 transistor

Abstract: 2n2222 jan NEW ENGLAND SEMICONDUCTOR SMALL SIGNAL NPN TRANSISTOR TO-18 ^C E O PACKAGE DEVICE TYPE (sus) VOLTS Ic (max) AMPS hpE @ IC / ^C E min/max @ mA/V VcE(jat) @ It/Iß v@ mA/mA TO-18 T0206AA 2N706 2N708 15 15 40h 50 80 45 30 40 30 40 15 15 15 20 30 45 0.05 0.5 0.5 0.03 0.8 0.8 0.8 0.8 0.5 0.5 0.5 0.5 0.1 0.1 20@ 10/1 30-120@10/l 40/120@l 50/10 40/120@150/10 40/120@l 50/10 150@0.5/5 40/120@150/10 40/120@ 150/10 100/300@150/10 100/300@ 150/10 10@ 100/2 20@ 100/2 20@ 100/1 30@100/1 50@5/l
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2n706 transistor 2n2222 jan 2N706 JAN transistor 2n706 2N718 2N718AA 2N720A 2N930A 2N2221 2N2221AA

"photo transistor"

Abstract: MTD6160 MARKTECH INTERNATIONAL IflE D STTUSS 0GQQ3Ti 4 PHOTO TRANSISTOR MTD6160 SILICON NPN EPITAXIAL PLANER APPLICATIONS â'¢ OPTICAL SWITCH â'¢ TAPE, CARD READERS â'¢ POSITION SENSOR â , -30-85 °C Storage Temperature Range Tstfl -30-100 °c T-qi-u ¿3.8 t 0.2 I Is ss 03.1 t 0.2 rn , '¢ FAX: (518) 436-5877 145 MARKTECH INTERNATIONAL 1ÛE D â  STTìbSS G0Q04GG 7 â  PHOTO TRANSISTOR , ) 436-5877 146 NARKTECH INTERNATIONAL lflE D â  5711b5S QOOOMQl T â  PHOTO TRANSISTOR FREQUENCY
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MTE1090 VCC-10V

PS2002B

Abstract: PS2002 LED-Darlington Transistor without Base Connection led-?- 'J > h > â'¢ 7 * h â'¢ -7 m [si m > P r"n LU LU LU tt « 8 * £ is m & ti n S l >k »1 2 :k «1 £ » i * si 2 * IB 1 -k - 2 * 181 If max (mA) V« max (V) Pm max (mW) Vce max (V) Vrc' l0l max (mA) Pm max (mW) BV min (kV) DC/AC' T. min 1 max CC) Vf max / If (V/mA) C, max typ" (pF) t , * -20-100 -30-100 1.9/5 1.4/10 100" 50' 100* 80* 120* 80* 100/5 200/5 1.2/5,2.0 1.0/5,2.0 0.8* 0.5* li+M
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