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300msec

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Abstract: * Measured in Circuit IF = 1/2 A, IR = 1.0 A, IREC = 1/4 A 1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%. * Measured in Circuit IF = 1/2 A, IR = 1.0 A, IREC = 1/4 A 1 Pulse Test: Pulse Width 300msec, Duty Cycle 2 , Circuit IF = 1/2 A, IR = 1.0 A, IREC = 1/4 A 1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%. * Measured in Circuit IF = 1/2 A, IR = 1.0 A, IREC = 1/4 A 1 Pulse Test: Pulse Width 300msec, Duty Cycle 2 International Rectifier
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OM9007SC OM9008SC OM9009SC OM9010SC OM803 static characteristics of mosfet MO-078
Abstract: ) V V 100 1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%. ns 5.8 S(W ) VDS 2 VDS(on , Test: Pulse Width 300msec, Duty Cycle 2%. 250 A -2 -2 Source Current1 A - 36 , 300msec, Duty Cycle 2%. 2.8 S(W ) VDS 2 VDS(on), ID = 2.5 A VGS = 0 VDD = 225 V, ID = 2.5 A , 300msec, Duty Cycle 2%. 430 A - 1.4 -2 Source Current1 A - 18 (Body Diode) symbol , , IS = -24 A, VGS = 0 VSD trr Reverse Recovery Time 1 Pulse Test: Pulse Width 300msec, Duty International Rectifier
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OM6241SD sm 17 35 tc SM-150 diode transistor FS 22 SM OM6234SD/SM OM6236SD/SM OM6238SD/SM OM6240SD/SM OM6235SD/SM OM6237SD/SM
Abstract: rectifier. ISM 1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%. Modified MOSPOWER D G - , dlF/ds = 100 A/ms 1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%. VGS = 0 symbol showing , rectifier. ISM dlF/ds = 100 A/ms 1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%. D G - 32 , MOSPOWER symbol showing Source Current1 the integral P-N 1 Pulse Test: Pulse Width 300msec, Duty Omnirel
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OMY140 OMY340 OMY240 OMY440 400v 20 amp mosfet MIL-S-19500
Abstract: 300msec, Duty Cycle 2%. Modified MOSPOWER symbol showing (Body Diode) S D - 25 Source Current1 dlF/ds = 100 A/ms 1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%. S(W ) VDS 2 VDS(on), ID , 300msec, Duty Cycle 2%. Modified MOSPOWER symbol showing Source Current1 dlF/ds = 100 A/ms 1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%. A (Body Diode) S D - 13 (Body Diode Omnirel
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OM6214SS OM6216SS OM6215SS OM6217SS om6214
Abstract: : Pulse Width 300msec, Duty Cycle 2%. ns G ISM the integral P-N Junction rectifier. D , , trr Reverse Recovery Time dlF/ds = 100 A/ms 1 Pulse Test: Pulse Width 300msec, Duty Cycle 2 , Recovery Time A D IS - 1.6 - 2.5 470 1 Pulse Test: Pulse Width 300msec, Duty Cycle 2 , Reverse Recovery Time dlF/ds = 100 A/ms 1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%. 430 A -
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OM6001ST OM6003ST OM6101ST OM6103ST OM6002ST OM6004ST
Abstract: 300msec, Duty Cycle 1.5%. 2 Pulse Width limited by safe operating area. 3 OM1N100ST - All , Source Current1 1.0 S dlF/ds = 100 A/ms, TJ = 150 C 1 Pulse Test: Pulse Width 300msec, Duty , Source Current2 V 1 Pulse Test: Pulse Width 300msec, Duty Cycle 1.5%. 2 Pulse Width limited by , : Pulse Width 300msec, Duty Cycle 1.5%. 2 Pulse Width limited by safe operating area. 3. Also available Omnirel
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OM1N100SA OM5N100SA OM3N100SA OM6N100SA OM3N100ST MIL-19500
Abstract: Recovery Time 23 A 75 A 3.5 - 2.5 200 1 Pulse Test: Pulse Width 300msec, Duty Cycle 2 , Recovery Time dlF/ds = 100 A/ms 1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%. 20 A 80 A , 12 A 28 A 5.5 - 2.5 V V 450 ns 1 Pulse Test: Pulse Width 300msec, Duty , Recovery Time dlF/ds = 100 A/ms 1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%. 8 A 30 A , 300msec, Duty Cycle 2%. V V ns D IS IF = 8 A, VGS = 0 IF = 8 A, Continuous Source International Rectifier
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OM23P06ST OM20P10ST OM12P10ST OM8P20ST OM8P25ST OM2P50ST OM12P10SA OM8P25SA OM8P20SA
Abstract: Width 300msec, Duty Cycle 2%. ns G ISM the integral P-N Junction rectifier. D symbol , Reverse Recovery Time dlF/ds = 100 A/ms 1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%. 250 ns , Recovery Time - 1.6 - 2.5 470 1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%. A D IS , dlF/ds = 100 A/ms 1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%. A - 18 (Body Diode International Rectifier
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OM6405SD OM6406SD OM6407SD OM6408SD
Abstract: Test: Pulse Width 300msec, Duty Cycle 2%. Modified MOSPOWER D G - 72 A the integral , Test: Pulse Width 300msec, Duty Cycle 2%. VGS = 0 symbol showing Source Current1 A 200 , Junction rectifier. 1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%. Modified MOSPOWER D G , dlF/ds = 100 A/ms 1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%. VGS = 0 symbol showing Omnirel
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OM6009SA OM6011SA OM6109SA OM6111SA OM6010SA OM6012SA OM6110SA
Abstract: trr Reverse Recovery Time 400 1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%. A - 2.5 , Diode Forward Voltage1 trr Reverse Recovery Time 350 1 Pulse Test: Pulse Width 300msec, Duty , , dlF/ds = 100 A/ms VSD trr Reverse Recovery Time 700 1 Pulse Test: Pulse Width 300msec , ) S TC = 25 C, IS = -15 A, VGS = 0 1 Pulse Test: Pulse Width 300msec, Duty Cycle 2 Omnirel
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OM6017SA OM6019SA OM6018SA OM6020SA irfm150
Abstract: Diode) A - 2.5 400 1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%. V ns BODY-DRAIN , Test: Pulse Width 300msec, Duty Cycle 2%. A -2 Diode Forward Voltage1 A - 120 Source , 300msec, Duty Cycle 2%. - 13 VSD trr Reverse Recovery Time 700 1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%. A - 1.4 Diode Forward Voltage1 A - 52 Source Current1 (Body Omnirel
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OMD100 OMD400 OMD200 OMD500
Abstract: ) 300msec, Duty Cycle 2%. G -. 15 V TC = 25 C IS = -18 A, VG S = 0 , ns TJ = 150 C IF , showing 300msec, Duty Cycle 2%. S COM140T - COM440T 3.1 ELECTRICAL CHARACTERISTICS , IM S Source Current1 A the integral P-N 300msec, Duty Cycle 2%. G -2 V TC , showing -4 0 VS D -8 (Body Diode) symbol showing 300msec, Duty Cycle 2%. S 2 Omnirel
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COM340T COM240T diode GF M gf diode
Abstract: Voltage1 t r Reverse Recovery Time - 25 . G 400 300msec, Duty Cycle 2%. IM S , Time 1 Pulse Test: Pulse Width D A -2 350 300msec, Duty Cycle 2%. V ns S , Voltage1 t r Reverse Recovery Time 600 300msec, Duty Cycle IM S A - 16 . (Body , TC = 25 C IS = -15 A, VG S = 0 , 2%. Modified MOSPOWER -1 3 700 300msec, Duty Cycle Omnirel
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COM150A COM350A COM250A COM450A
Abstract: Time 400 1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%. A - 2.5 Source Current1 A , , VSD trr Reverse Recovery Time 350 1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%. A , TJ = 100 C, IF = IS, 1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%. - 13 VSD trr Reverse Recovery Time 700 1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%. A - 1.4 Diode Omnirel
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OM6005SC OM6007SC OM6105SC OM6107SC OM6006SC OM6008SC OM6106SC
Abstract: 100 A/ms 1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%. 1 Pulse Test: Pulse Width 300msec, Duty , Pulse Test: Pulse Width 300msec, Duty Cycle 2%. D -8 (Body Diode) S dlF/ds = 100 A/ms 1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%. VDS 2 VDS(on), ID = 2 A VGS = 0 symbol showing International Rectifier
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OM6413SP3 OM6414SP3 OM6415SP3 OM6416SP3
Abstract: 1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%. 100 V Max. Reverse Current TJ = 25°C TJ , 1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%. POWER RECTIFIER CHARACTERISTICS PIV ISM , A 1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%. POWER RECTIFIER CHARACTERISTICS PIV - , . Reverse Recovery Time 50 nsec 3.1 OM9001SS - OM9004SS 1 Pulse Test: Pulse Width 300msec, Duty International Rectifier
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OM9003SS OM9002SS 2 Amp zener diode
Abstract: Width 300msec, Duty Cycle 2%. D symbol showing (Body Diode) S dlF/ds = 100 A/ms 1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%. 20 (Body Diode) Junction rectifier. Diode Forward International Rectifier
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OM9326SC pch 1275
Abstract: : Pulse Width 300msec, Duty Cycle 2%. ns G ISM the integral P-N Junction rectifier. D , , trr Reverse Recovery Time dlF/ds = 100 A/ms 1 Pulse Test: Pulse Width 300msec, Duty Cycle 2 , Test: Pulse Width 300msec, Duty Cycle 2%. V V ns Continuous Source Current - 4.5 ISM , Reverse Recovery Time dlF/ds = 100 A/ms 1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%. 430 A Omnirel
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OM6102ST OM6104ST 6004ST OM6001ST/OM6101ST OM6002ST/OM6102ST OM6003ST/OM6103ST OM6004ST/OM6104ST
Abstract: -o UJ â¡ w â¡ -1 â¡ 1 ru * -o a Ln cr -3 â'¢Pulse Test: Pulse width < 300Msec, Duty , Test: Pulse width < 300Msec, Duty Cycle < 1.5%. OM75NQ5NK (Tc = 25°C unless otherwise specified) IT , Recovery Current 6.5 A o 3 0 1 [O] â'¢Pulse Test: Pulse width < 300Msec, Duty Cycle < 1.5%. a -
OCR Scan
OM75N05NK OM60N10NK OM55N10NK OM75N06NK 55n10 75n05 OM55N1 OM75NQ6NK
Abstract: =4.0V UF4005-4007 *Pulse Test: Pulse Width 300msec, Duty Cycle 1% www.cnelectr.com MAX .205 .107 .034 Shanghai Lunsure Electronic
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UF4001 UF4007 UF4002 UF4003 UF4004 UF4005 UF4001 diode in 4007 diode
Abstract: ) V V 100 1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%. ns 5.8 S(W ) VDS 2 VDS(on , Test: Pulse Width 300msec, Duty Cycle 2%. 250 A -2 -2 Source Current1 A - 36 , 300msec, Duty Cycle 2%. 2.8 S(W ) VDS 2 VDS(on), ID = 2.5 A VGS = 0 VDD = 225 V, ID = 2.5 A , 300msec, Duty Cycle 2%. 430 A - 1.4 -2 Source Current1 A - 18 (Body Diode) symbol , , IS = -24 A, VGS = 0 VSD trr Reverse Recovery Time 1 Pulse Test: Pulse Width 300msec, Duty Solid State Devices
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SDR643CTS1 SDR647CTS1 SDR64 SDR644CTS1 SDR645CTS1 SDR646CTS1
Abstract: Recovery Time 23 A 75 A 3.5 - 2.5 200 1 Pulse Test: Pulse Width 300msec, Duty Cycle 2 , Recovery Time dlF/ds = 100 A/ms 1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%. 20 A 80 A , 12 A 28 A 5.5 - 2.5 V V 450 ns 1 Pulse Test: Pulse Width 300msec, Duty , Recovery Time dlF/ds = 100 A/ms 1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%. 8 A 30 A , 300msec, Duty Cycle 2%. V V ns D IS IF = 8 A, VGS = 0 IF = 8 A, Continuous Source Solid State Devices
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RU0087C
Abstract: Test: Pulse Width 300msec, Duty Cycle 2%. Modified MOSPOWER D G - 72 A the integral , Test: Pulse Width 300msec, Duty Cycle 2%. VGS = 0 symbol showing Source Current1 A 200 , Junction rectifier. 1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%. Modified MOSPOWER D G , dlF/ds = 100 A/ms 1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%. VGS = 0 symbol showing Solid State Devices
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SDR646CT SDR647CT MIL-PRF-19500 RU0087B
Abstract: rectifier. ISM 1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%. Modified MOSPOWER D G - , dlF/ds = 100 A/ms 1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%. VGS = 0 symbol showing , rectifier. ISM dlF/ds = 100 A/ms 1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%. D G - 32 , MOSPOWER symbol showing Source Current1 the integral P-N 1 Pulse Test: Pulse Width 300msec, Duty Solid State Devices
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ultra fast recovery diode trr3 RU0087D
Abstract: Diode) A - 2.5 400 1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%. V ns BODY-DRAIN , Test: Pulse Width 300msec, Duty Cycle 2%. A -2 Diode Forward Voltage1 A - 120 Source , 300msec, Duty Cycle 2%. - 13 VSD trr Reverse Recovery Time 700 1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%. A - 1.4 Diode Forward Voltage1 A - 52 Source Current1 (Body National Semiconductor
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dc cdi schematic diagram pll 565 application 1 ghz fm demodulator PLL IC 565 adjustable zero span circuit DB25 connector datasheet LMX2433SLE D3500 LMX2433SLEFPEBI 2C18PPMZZ LMX2433SLEFPEB LMX2434SLE
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