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Part Manufacturer Description Datasheet BUY
LT3003EMSE Linear Technology LT3003 - 3-Channel LED Ballaster with PWM; Package: MSOP; Pins: 10; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT3003EMSE#TR Linear Technology LT3003 - 3-Channel LED Ballaster with PWM; Package: MSOP; Pins: 10; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT3003EMSE#PBF Linear Technology LT3003 - 3-Channel LED Ballaster with PWM; Package: MSOP; Pins: 10; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT3003EMSE#TRPBF Linear Technology LT3003 - 3-Channel LED Ballaster with PWM; Package: MSOP; Pins: 10; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy

3003 BR TRANSISTOR

Catalog Datasheet MFG & Type PDF Document Tags

M3002M

Abstract: M3006M 3001 M M 3002 M M 3003 V(BR}EBO v (BR)CEO 150 2 00 150 5.0 Vdc ] Sym bol | M in | M ax | U n it | E , v CEO vebo M M 3001 M M 3002 M M 3003 150 200 5.0 2 00 50 50 250 U n it Vdc V dc m Adc 'c , PURPOSE TRANSISTOR N P N S IL IC O N ELECTRICAL CHARACTERISTICS H a = 25°C unless o th e rw ise noted , n t G ain (I q 10 m A d c , V c e = 10 V dc) M M 3001 M M 3002, M M 3003 - Vdc ICBO - - , pa cita nc e (V c B = 2 0 V d c , I e = 0 , f = 100 kHz) M M 3001 M M 3Û 02, M M 3003 2.0% . C0 bo -
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transistor mje 3003

Abstract: mje 3003 consisting of pad, esd, resistors and transistor buffers. Not shown in the schematics is a RC filter network , 101 * The power supplly is 3.3Volts. RB1 3001 3003 50 RB2 3002 3004 50 XQ3 101 3003 4 0 H12E05 XQ4 101 3004 5 0 H12E05 R1 11 3003 100 CFILT 11 12 .6p R2 12 3004 100 RC1 101 6 7000 IC1 6 0 .05M RB3 6 3003 4000 RC2 101 7 7000 IC2 7 0 .05M RB4 7 3004 4000 IB1 4 0 0.20M IB2 5 0 0.20M , =3 EG=1.140 BF=223.719 BR=20 XTB=450M + VAF=29 VAR=3.500 NF=1.010 NR=1.020 NE=1.650 NC=1.560 IKF
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transistor mje 3003 mje 3003 kf 202 transistor 3003 BR TRANSISTOR IS-132 MAX3968 920E-018 083E-022 168E-030 680E-019 H11M022

c4001 transistor

Abstract: transistor c4001 pad, ESD, resistors and transistor buffers. The input pins are nodes 1001 (IN+) and 1002 (IN-). , Volts. RB1 8 3003 100 RB2 9 3004 100 XESD1 8 0 0 HDE072021 XESD2 9 0 0 HDE072021 XQ3 10 3003 4 0 H11A05 , REPORTERL1N67 .MODEL QESD PNP( IS=2.591E-018 NF=1.050 BF=800M BR=600U CJE=34.006F + VJE=600M MJE=400M CJC , ( IS=1.151E-017 XTI=3 EG=1.140 BF=223.719 BR=20 XTB=450M + VAF=29 VAR=3.500 NF=1.010 NR=1.020 NE , =400M VJC=650M BF=10K BR=672.167U TF=1N FC=900M ) .ENDS H11A05 .PRINT TRAN V(1001) V(1002) .PROBE .END
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c4001 transistor transistor c4001 3004 transistor TC182 k0203 MAX3885ECB REPORTERL1N66 444E-021 000E-030 540E-019
Abstract: Symbol Conditions ' V(BR)CES V ge = V ge = V ge = V ce = V ge = V ge = V ce = VûE(th , 2503) 3003)/3 5 0 4) 3003)/2 0 0 4) 0,84) 1,14) 1,7 (1.4) V V mA mA nA V 60 20 5,5 , frequencies above 15 kHz IGBT - Insulated Gate Bipolar Transistor 1 Tcasa = 25 °C, unless otherwise 1 -
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SKM25 SKM25GB1 Q002SMD

bbc dsa 75 12

Abstract: BBC DSA 12 -â'" 93D 03559 3)'. BIPOLAR TRANSISTOR CHIPS NPN Transistors 'TH' Device Types ELECTRICAL CHARACTERISTICS at TA = 25°C lc 'cBO DC Current Gain VcE(sat) fT Device Max. V(BR)CBO V(BR)CEO V(BR)EBO Max. @VCB hfF hfF @V0F Max. @l0 Min. @|n Câ'žh1 V NF1 Type (mA) (V) (V) (V) (nA) (V) Min , THC3009 300 40 15 4.0 5003 20 30 120 30 0.4 0.18 30 350 30 5.0 25 _ BJB THC3013 300 40 15 5.0 3003 20 30 , 0.3 50 BBC THC3405 500 50 50 5.0 100 50 180 540 2.0 4.5 0.3 50 BBC NOTES: 3) V(BR)CES/ICES
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THC2510 THC2511 THC2586 THC2712 THC2714 THC2923 bbc dsa 75 12 BBC DSA 12 bbc dsa 250 BBC DSA 1 14 BBC DSA 750 0D03S51
Abstract: < o m V(BR)CES VGE(th) Ices il p cT I I Characteristics Symbol 1 mA = V c e , Ic , Ib.in. Nm Ib.in. m/s? g - - 1003) 3003) 4003)/4004) soo ^ ^ öo4 1 0,94) 1,34) 1,8 , Transistor 1 Tease = 25 °C, unless otherwise 1 specified 2) If = - I c ,V r = 600V, -d iF /d t = 800A/^ -
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QQG2S41 T-33-15

transistor pcr 606 j

Abstract: H8/3003 HD6413003RF H8/3003 Hardware Manual Preface The H8/3003 is a high-performance microcontroller that integrates system supporting functions together with an H8/300H CPU core. The H8/300H CPU has a 32 , modes offer a choice of data bus width and address space size, enabling the H8/3003 to adapt quickly and flexibly to a variety of conditions. This manual describes the H8/3003 hardware. For details of , . 695 Section 1 Overview 1.1 Overview The H8/3003 is a microcontroller (MCU) that integrates
Hitachi Semiconductor
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H8/3003 QFP-112 transistor pcr 606 j H8/3003 HD6413003RF hd6413003 in 3003 TRANSISTOR PCR 406 J PCR 606 J

transistor pcr 606 j

Abstract: MARL 34 b7E D^" NPN 5 GHz wideband transistor c BFT25A FEATURES â'¢ Low current consumption (100 nA - 1 mA , is a silicon npn transistor, primarily intended for use in RF low power amplifiers, such as pocket telephones and paging systems with signal frequencies up to 2 GHz. The transistor is encapsulated in a 3 , NPN 5 GHz wideband transistor BFT25A LIMITING VALUES In accordance with the Absolute Maximum System , /DISCRETE b?E D- NPN 5 GHz wideband transistor BFT25A 40 MCD137 Plot (mW
Hitachi Semiconductor
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H8/3042 H8/3040 MARL 34 transistor PCR 406 HM transistor pcr 406 A705R mar 552 pcr 606 transistor H8/3041 ADE-602-067 FP-100B TFP-100B

transistor pcr 606 j

Abstract: PCR 606 J specification b?E D NPN 9 GHz wideband transistor FEATURES c BFR505 PINNING â'¢ High power , view DESCRIPTION The BFR505 is an npn silicon planar epitaxial transistor, intended for , TV tuners (SATV). Fig. 1 SOT23. The transistor is encapsulated in a plastic SOT23 envelope , GHz wideband transistor « apx Product specification b?E D BFR505 LIMITING VALUES In , b7E ] -> NPN 9 GHz wideband transistor BFR505 CHARACTERISTICS T( = 25 °C unless
Hitachi Semiconductor
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H8/3048 ndr 550 IC 555 timer data sheet smr 40000 c hd64f SCR bt 107 U 722 h8 HD64F3048 HD6473048 HD6433048 H8/3047 HD6433047

transistor pcr 606 j

Abstract: PCR 406 J these materials or the products contained therein. H8/3003 Hardware Manual The revision list can , -602-055A Preface The H8/3003 is a high-performance microcontroller that integrates system supporting functions , space size, enabling the H8/3003 to adapt quickly and flexibly to a variety of conditions. This manual describes the H8/3003 hardware. For details of the instruction set, refer to the H8/300H Programming Manual
Hitachi Semiconductor
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LWR 703 HD6433040F HD6433041F HD6433042F HD6473042F Hitachi DSA0044

transistor pcr 606 j

Abstract: PCR 606 J H8/3003 Hardware Manual ADE-602-055A Preface The H8/3003 is a high-performance microcontroller that integrates system supporting functions together with an H8/300H CPU core. The H8/300H CPU has a 32-bit internal architecture with sixteen 16-bit general registers, and a concise, optimized , operating modes offer a choice of data bus width and address space size, enabling the H8/3003 to adapt quickly and flexibly to a variety of conditions. This manual describes the H8/3003 hardware. For details
Hitachi Semiconductor
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OMC942723052 H8/3002 HITACHI microcontroller SCR TRIGGER PULSE sk 3003 s HD6413002VTF

mje 3003

Abstract: mje 1303 H8/3003 Hardware Manual ADE-602-055A Preface The H8/3003 is a high-performance microcontroller that integrates system supporting functions together with an H8/300H CPU core. The H8/300H CPU has a 32-bit internal architecture with sixteen 16-bit general registers, and a concise, optimized , operating modes offer a choice of data bus width and address space size, enabling the H8/3003 to adapt quickly and flexibly to a variety of conditions. This manual describes the H8/3003 hardware. For details
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mje 1303 transistor Bf 444 369-42 433-2 npn sot23 1303 Philips FA 291 DDE53

philips 4859

Abstract: these materials or the products contained therein. User's Manual H8/3003 Hardware Manual can be , . Preface The H8/3003 is a high-performance microcontroller that integrates system supporting functions , space size, enabling the H8/3003 to adapt quickly and flexibly to a variety of conditions. This manual describes the H8/3003 hardware. For details of the instruction set, refer to the H8/300H Programming Manual
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philips 4859 S3T31 D05SB11

transistor pcr 606 j

Abstract: H8/3003 HD6413003RF H8/3003 Hardware Manual ADE-602-055A Preface The H8/3003 is a high-performance microcontroller that integrates system supporting functions together with an H8/300H CPU core. The H8/300H CPU has a 32-bit internal architecture with sixteen 16-bit general registers, and a concise, optimized , operating modes offer a choice of data bus width and address space size, enabling the H8/3003 to adapt quickly and flexibly to a variety of conditions. This manual describes the H8/3003 hardware. For details
Renesas Technology
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P555 p556 NS532 P555 timer P125 P132

HD6413003T

Abstract: Hitachi DSA00771 H8/3003 Hardware Manual ADE-602-055A Preface The H8/3003 is a high-performance microcontroller that integrates system supporting functions together with an H8/300H CPU core. The H8/300H CPU has a 32-bit internal architecture with sixteen 16-bit general registers, and a concise, optimized , operating modes offer a choice of data bus width and address space size, enabling the H8/3003 to adapt quickly and flexibly to a variety of conditions. This manual describes the H8/3003 hardware. For details
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HD6413003T Hitachi DSA00771 p531 P168 P175

P555

Abstract: P125 Purpose IC 4 General Purpose Linear IC 5 Transistor/Diode/Thyristor 6 Microwave Device , . 174 ­i­ 6. Transistor/Diode/Thyristor . 175 9. Packages . 239 Transistor . 176 · Quick Reference , . 186 Field Effect Transistor . 192 · Small Signal FET . 192 · Power MOS FET . 195 Transistor with Internal Resistor
Hitachi Semiconductor
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MARB
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