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3000V

Catalog Datasheet MFG & Type PDF Document Tags

1000V

Abstract: 0.015µF 2000V 270pF 1800pF 3000V 1812 0.140 0.075µF 500V 0.140 ± 0.010 1800pF 3900pF 3000V 0.150 ± 0.010 390pF 500V 1514 1000V 120pF 390ppF 500V , 3000V 2924 0.280 ± 0.020 0.200 0.020 ± 0.010 1000V 500V 0.230 max 0.200 0.082µF 3000V 2720 0.270 ± 0.020 0.250 max 0.020 ± 0.010 1800pF 8200pF 500V 0.230 ± 0.020 0.150 6800pF 470pF 3000V 2225 0.180 ± 0.013 0.020 ± 0.010
Presidio Components
Original
1000V

ROS3000V

Abstract: ROS-3000V power supply aqueous washable ROS-3000V+ ROS-3000V 2400 to 3000 MHz CASE STYLE: CK605 PRICE , ) 5 (mA) Max. 40 Min. Max. ROS-3000V(+) 2400 3000 Min. Max. 1 kHz 10 kHz 100 kHz 0.5 22 Pin , 44-1252-837010 Mini-Circuits ISO 9001 & ISO 14001 Certified REV. B M98898 ED-8377B/1 ROS-3000V MM/TD/CP/AM 061005 page 1 of 2 Performance Curves ROS-3000V+ ROS-3000V TUNING V SENS. TUNE (MHz/V) 0.60 , 8.94 9.30 9.74 9.88 10.02 9.80 9.85 9.56 9.56 9.24 9.22 9.22 9.15 9.22 9.04 8.81 8.74 8.74 ROS-3000V
Mini-Circuits
Original
ROS-3000V ROS3000V 302540 2002/95/EC TB-10 PL-012

ANC-15D

Abstract: 05VOUT technique, auto-recovery Hiccup mode, indefinite (automatic recovery) Input-Output (V.AC) 3000V 3000V 3000V 1500V 1500V 1500V 1500V Output-FG (V.AC) Isolation 3000V Input-FG , ) Input-Output (V.AC) 3000V 3000V 3000V 3000V 3000V Input-FG (V.AC) 1500V 1500V 1500V
ARCH Electronics
Original
ANC-12S ANC-24S ANC-15S ANC-15D 05VOUT ANC-12D 90-260VAC MIL-HDBK-217F

symmetrical gate commutated thyristor

Abstract: CS thyristor forward gate power dissipation Average reverse gate power dissipation VD = 3000V, IT = 1500A, CS = , 3000V, Tj = 25/125°C (see Fig. 4, 5) CS = 0.2µF, RS = 5 Operation Junction temperature Storage , 10 21 900 1500 9 32 180 230 ­20 ~ 125 Conditions VDM = 3/4 VDRM, VD = 3000V, LC = 0.3µH , 6500V, Tj = 125°C VDM = 6500V, VGK = ­2V, Tj = 125°C VRG = 21V, Tj = 125°C VD = 3000V, VGK = ­2V, Tj = 125°C (Expo. wave) IT = 1500A, VD = 3000V, di/dt = 1000A/µs, Tj = 125°C CS = 0.2µF, RS = 5 IGM
Mitsubishi
Original
FGC1500B-130DS symmetrical gate commutated thyristor CS thyristor gct thyristor 0.2uF thyristor 800A 91MAX

CS thyristor cs 6

Abstract: CS thyristor 3000V, LC = 0.3µH, VRG = 20V Tj = 25/125°C, diGQ/dt = 1200A/µs (see Fig. 1, 3) Applied for all , 3000V, IT = 800A, CS = 0.1µF, RS = 10 Tj = 25/125°C, f = 60Hz, IGM = 90A, diG/dt = 50A/µs (see Fig. 1, 2) IT = 800A, VR = 3000V, Tj = 25/125°C (see Fig. 4, 5) CS = 0.1µF, RS= 10 Operation Junction , 6500V, Tj = 125°C VDM = 6500V, VGK = ­2V, Tj = 125°C VRG = 21V, Tj = 125°C VD = 3000V, VGK = ­2V, Tj = 125°C (Expo. wave) IT = 800A, VD = 3000V, di/dt = 1000A/µs, Tj = 125°C CS = 0.1µF, RS = 10 IGM
Mitsubishi
Original
FGC800B-130DS CS thyristor cs 6 1200A thyristor gate control circuit CS 15 thyristor thyristor 1000A thyristor 1200A 75MAX

mstb2.5 PHOENIX

Abstract: GCU08BA-130 1000 A/µs 1000 f = 60Hz, = 180°, Tf = 62°C , VDM = 3/4VDRM, VD = 3000V, Tj = 25/125°C 1, 3 LC = 0.3µH f = 60Hz, 1 Tj = 125°C IT = 800A, VD = 3000V, Tj = 25/125°C 1, 2 CS = 0.1µF, RS = 10, f = 60Hz IT = 800A, VR = 3000V, Tj = 25/125°C CS = 0.1µF, RS = 10 4, 5 V V V V V A , 125°C VRM = 6500V, Tj = 125°C VDM = 6500V, , Tj = 125°C VRG = 21V, Tj = 125°C VD = 3000V, , Tj = 125°C IT = 800A, VD = 3000V, di/dt = 1000A/µs CS = 0.1µF, RS = 10, Tj = 125°C 1, 2
Mitsubishi
Original
GCU08BA-130 HFBR-2521 HFBR-1521 mstb2.5 PHOENIX VR3000

gk 36

Abstract: RS153 = 60Hz, = 180°, Tf = 55°C , VDM = 4000V, VD = 3000V, Tj = 25/125°C 1, 3 LC = 0.3µH f = 60Hz, 1 Tj = 125°C IT = 400A, VD = 3000V, Tj = 25/125°C 1, 2 CS = 0.06µF, RS = 15, f = 60Hz IT = 400A, VR = 3000V, Tj = 25/125°C CS = 0.06µF, RS = 15 4, 5 VTM IRRM IDRM IGRM dv/dt tgt td , °C VDM = 6500V, , Tj = 125°C VRG = 21V, Tj = 125°C VD = 3000V, , Tj = 125°C IT = 400A, VD = 3000V, di/dt = 1000A/µs CS = 0.06µF, RS = 15, Tj = 125°C 1, 2 IT = 400A, VDM = 4000V, VD = 3000V
Mitsubishi
Original
GCU04AA-130 gk 36 RS153 RS15

120D-22

Abstract: FG6000AU-120D Junction temperature Storage temperature Mounting force required Weight Conditions VD = 3000V, VDM = , 60Hz One cycle at 60Hz VD = 3000V, IGM = 90A, Tj = 125°C Recommended value 108 Standard value , °C, VRRM Applied Tj = 125°C, VDRM Applied, VGK = ­2V Tj = 125°C, VRG = 22V Tj = 125°C, VD = 3000V, VDM = 5500V, VGK = ­2V Tj = 125°C, ITM = 6000A, IGM = 90A, VD = 3000V tgq Turn-off time IGQM VGT , ON-STATE CURRENT (A) IT = 6000A VD = 3000V diT/dt = 500A/µs diG/dt = 30A/µs CS = 6.0µF RS = 5.0 Tj
Mitsubishi
Original
FG6000AU-120D 120D-22 60uf Gate Turn-Off Thyristors

capacitor 12 n j 630v

Abstract: capacitor 22 nF 1000v ® Availability - NP0 Dielectric X1Y2 5000V 4000V 2211 3000V 2000V 1000V 630V · 500V X1Y2 630V 500V X2Y3 5000V 4000V 3000V 2000V 1000V 3000V 2000V 1000V 1812 · 630V · 500V · 1808 · · 3000V 1000V · 1210 2000V 630V , www.johansondielectrics.com High Voltage PolyTerm® Availability - NP0 Dielectric 5000V 4000V 3000V 2000V 630V 1000V 500V 5000V 4000V 2225 3000V 2000V 1000V 630V 500V 5000V 4000V
Johanson Dielectrics
Original
capacitor 12 n j 630v capacitor 22 nF 1000v X1Y2 ceramic capacitor 4.7 nf 500v X1Y2 47-nF capacitor 630v

capacitor 12 n j 630v

Abstract: capacitor 22 nF 1000v ® Availability - NP0 Dielectric Y2 5000V 4000V 2211 3000V 2000V 1000V 630V · 500V X1Y2 630V 500V X2Y3 5000V 4000V 3000V 2000V 1000V 3000V 2000V 1000V 1812 · 630V · 500V · 1808 · · 3000V 1000V · 1210 2000V 630V , www.johansondielectrics.com High Voltage PolyTerm® Availability - NP0 Dielectric 5000V 4000V 3000V 2000V 630V 1000V 500V 5000V 4000V 2225 3000V 2000V 1000V 630V 500V 5000V 4000V
Johanson Dielectrics
Original
capacitor 560 pF 500V 91342 capacitor 180 nF code marking s47 diode 4000v 302R29N1R0CF4E

CC1808

Abstract: c4532 specific 101 471 102 Tolerance X7R 3F 3D 3A (3000V) (2000V) (1000V) F: ± 1pF K: ± 10 , ) Capacitance Tolerance Thickness (mm) C4520C0G3F100F C0G 3000V 10 ± 1% 0.85 ± 0.10 C4520C0G3F120K C0G 3000V 12 ± 10% 0.85 ± 0.10 C4520C0G3F150K C0G 3000V 15 ± 10% 1.10 ± 0.15 C4520C0G3F180K C0G 3000V 18 ± 10% 1.10 ± 0.15 C4520C0G3F220K C0G 3000V 22 ± 10% 1.10 ± 0.15 C4520C0G3F270K C0G 3000V 27 ± 10% 1.60 ± 0.20
TDK
Original
C4520 CC1808 C4532 CC1812 c4532 specific tdk capacitors c4532 2000/53/CE 2005/673/CE

KX7r

Abstract: transistor c322 2500V 3000V 500V 1000V 2000V 3000V 500V 1000V 2000V 3000V 100 11 110 12 120 13 130 , 500V 1000V 1500V 2000V 500V 1000V 1500V 2000V 2500V 3000V 500V 1000V 2000V 3000V 500V 1000V 2000V 3000V , 1000V 1500V 2000V 2500V 3000V 500V 1000V 2000V 3000V 500V 1000V 2000V 3000V 10pF 100 12 120
KEMET
Original
KX7r transistor c322 C102m marking 34x 102k 2000v KEMET C330 SERIES

symmetrical gate commutated thyristor

Abstract: 900 1500 VD = 3000V, IT = 1500A, CS = 0.2µF, RS = 5â"¦ Tj = 25/125°C, f = 60Hz (See Fig. 1, 2) IT = 1500A, VR = 3000V, Tj = 25/125°C CS = 0.2µF, RS = 5â"¦ (See Fig. 4, 5) A 8 2.7 × 105 , condition angles f = 60Hz, sinewave θ = 180°, Tf = 66°C VDM = 3/4 VDRM, VD = 3000V, LC = 0.3µH Tj = , °C, Gata driver energized VRG = 21V, Tj = 125°C VD = 3000V, Tj = 125°C Gate driver energized (Expo , Gate trigger current Gate trigger voltage IT = 1500A, VD = 3000V, di/dt = 1000A/µs, Tj = 125Â
-
Original
GCU15CA-130 10MIN 20MAX

120d-22

Abstract: C12120 VD = 3000V, VDM = 5500V, Tj = 125°C, CS = 6.0mF, LS = 0.2mH 180Tf = 72°C 60Hz1 1 VD = 3000V, IGM , = 3000V, VDM = 5500V, VGK = ­2V Tj = 125°C, ITM = 6000A, IGM = 90A, VD = 3000V V mA mA mA V , 40 80 (°C) 12 120 160 tgt td (ms) (A) (V) (A) IT = 6000A VD = 3000V , 0 40 80 120 (A) 160 200 FG6000AU-120D - 50 VD = 3000V VDM = , 0 2000 4000 6000 8000 tgq ts (ms) tgq ts (ms) - 50 VD = 3000V VDM
Mitsubishi
Original
FG3000GX-90DA FG4000GX-90DA FGR3000CV-90DA FGR3000FX-90DA C12120 FG6000AU120D 120D22 2000CS FG3000

Soft Termination High Voltage Series

Abstract: Approval sheet Soft term high voltage_(SH_200V to 3000V) MULTILAYER CERAMIC CAPACITORS Soft Termination High Voltage Series (SH_200V to 3000V) NP0 & X7R Dielectrics 0603 to 1812 Sizes, 200V to 3000V , ASC_Soft term high voltage_(SH_200V to 3000V)_021F Nov. 2013 Approval sheet Soft term high voltage_(SH_200V to 3000V) 1. INTRODUCTION WTC Multilayer Ceramic Chip Capacitors supplied in tape & reel , termination code. Page 2 of 12 ASC_Soft term high voltage_(SH_200V to 3000V)_021F Nov. 2013
Walsin Technology
Original
Soft Termination High Voltage Series

symmetrical gate commutated thyristor

Abstract: press pack thyristor 180 230 10 21 900 1500 VD = 3000V, IT = 1500A, CS = 0.2µF, RS = 5 Tj = 25/125°C, f = 60Hz (See Fig. 1, 2) IT = 1500A, VR = 3000V, Tj = 25/125°C CS = 0.2µF, RS = 5 (See Fig. 4, 5) A 8 , all condition angles f = 60Hz, sinewave = 180°, Tf = 66°C VDM = 3/4 VDRM, VD = 3000V, LC = 0.3µH , driver energized VRG = 21V, Tj = 125°C VD = 3000V, Tj = 125°C Gate driver energized (Expo. wave , Gate trigger current Gate trigger voltage IT = 1500A, VD = 3000V, di/dt = 1000A/µs, Tj = 125°C CS
Mitsubishi
Original
press pack thyristor 6 thyristor driver circuit thyristor cs 52 7,5 kw mitsubishi inverter Power Thyristor 1500A GCT mitsubishi 160MIN

CS 15 thyristor

Abstract: thyristor cdi dissipation Average reverse gate power dissipation One half cycle at 60Hz, Tj = 125°C start VD = 3000V , ) IT = 400A, VR = 3000V, Tj = 25/125°C (see Fig. 4, 5) CS = 0.06µF, RS = 15 Unit V V V V V , 10 21 250 Conditions VDM = 4000V, VD = 3000V, LC = 0.3µH, VRG = 20V Tj = 25/125°C, diGQ/dt = , , Tj = 125°C VDM = 6500V, VGK = ­2V, Tj = 125°C VRG = 21V, Tj = 125°C VD = 3000V, VGK = ­2V, Tj = 125°C (Expo. wave) IT = 400A, VD = 3000V, di/dt = 1000A/µs CS = 0.06µF, RS = 15, Tj = 125°C IGM =
Mitsubishi
Original
FGC400A-130DS thyristor cdi thyristor 400A power thyristor 1000A GATE TURN OFF THYRISTOR 400 V 100 A 3000V 60MAX

nl 545

Abstract: MSTB2.5 f = 60Hz, = 180°, Tf = 66°C , VDM = 3/4VDRM, VD = 3000V, Tj = 25/125°C 1, 3 LC = 0.3µH f = 60Hz, 1 Tj = 125°C IT = 1500A, VD = 3000V, Tj = 25/125°C 1, 2 CS = 0.2µF, RS = 5, f = 60Hz IT = 1500A, VR = 3000V, Tj = 25/125°C CS = 0.2µF, RS = 5 4, 5 V V V V V A/µs kW kW W W V , 6500V, Tj = 125°C VDM = 6500V, , Tj = 125°C VRG = 21V, Tj = 125°C VD = 3000V, , Tj = 125°C IT = 1500A, VD = 3000V, di/dt = 1000A/µs CS = 0.2µF, RS = 5, Tj = 125°C 1, 2 IT = 800A, VD = 3000V, di
Mitsubishi
Original
nl 545 MSTB2.5 MSTB2,5

line commutated inverter circuit

Abstract: GU-D08 temperature Mounting force required Weight Conditions VDM = 3/4 VDRM, VD = 3000V, LC = 0.3µH, VRG = 20V , 180°, Tf = 55°C One half cycle at 60Hz, Tj = 115°C Start VD = 3000V, IT = 800A, CS= 0.1µF, RS= 10 , °C VD = 3000V, VGK = ­2V, Tj = 115°C (Expo. wave) (see Fig. 4) IT = 800A, VD = 3000V, di/dt = 1000A , VDRM, VD = 3000V CS= 0.1µF, RS= 10, VRG = 20V, Tj = 115°C With GU-D08 (see Fig. 1, 5) VR = 3000V , Eon VS IT 2.5 Condition VD=3000V, Tj=115°C di/dt=1000A/µs 2.0 Cs=0.1µF, Rs=10 With GU-D08 Max
Mitsubishi
Original
FGC800A-130DS line commutated inverter circuit

thyristor cdi

Abstract: gct thyristor /µs 3 9 50 60 10 21 250 400 VD = 3000V, IT = 400A, CS = 0.06µF, RS = 15 Tj = 25/125°C, f = 60Hz (See Fig. 1, 2) IT = 400A, VR = 3000V, Tj = 25/125°C CS = 0.06µF, RS = 15 (See Fig. 4, 5 , for all condition angles f = 60Hz, sinewave = 180°, Tf = 55°C VDM = 4000V, VD = 3000V, LC = 0.3µH , energized VRG = 21V, Tj = 125°C VD = 3000V, Tj = 125°C Gate driver energized (Expo. wave) Erec , recovery energy (See Fig. 1, 2) IT = 400A, VDM = 4000V, VD = 3000V CS = 0.06µF, RS = 15, Tj = 125
Mitsubishi
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1800pf

Abstract: 101 471 102 Tolerance X7R 3F 3D 3A (3000V) (2000V) (1000V) F: ± 1pF K: ± 10 , ) Capacitance Tolerance Thickness (mm) C4520C0G3F100F C0G 3000V 10 ± 1% 0.85 ± 0.10 C4520C0G3F120K C0G 3000V 12 ± 10% 0.85 ± 0.10 C4520C0G3F150K C0G 3000V 15 ± 10% 1.10 ± 0.15 C4520C0G3F180K C0G 3000V 18 ± 10% 1.10 ± 0.15 C4520C0G3F220K C0G 3000V 22 ± 10% 1.10 ± 0.15 C4520C0G3F270K C0G 3000V 27 ± 10% 1.60 ± 0.20
Presidio Components
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1800pf MIL-PRF49467
Abstract: power supply aqueous washable ROS-3000V+ ROS-3000V 2400 to 3000 MHz CASE STYLE: CK605 PRICE , ) 5 (mA) Max. 40 Min. Max. ROS-3000V(+) 2400 3000 Min. Max. 1 kHz 10 kHz 100 kHz 0.5 22 Pin , 44-1252-837010 Mini-Circuits ISO 9001 & ISO 14001 Certified REV. B M98898 ED-8377B/1 ROS-3000V MM/TD/CP/AM 061005 page 1 of 2 Performance Curves ROS-3000V+ ROS-3000V TUNING V SENS. TUNE (MHz/V) 0.60 , 8.94 9.30 9.74 9.88 10.02 9.80 9.85 9.56 9.56 9.24 9.22 9.22 9.15 9.22 9.04 8.81 8.74 8.74 ROS-3000V Presidio Components
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MIL-PRF-49467

C4520X7R3D

Abstract: CC1808 forward gate power dissipation Average reverse gate power dissipation VD = 3000V, IT = 1500A, CS = , 3000V, Tj = 25/125°C (see Fig. 4, 5) CS = 0.2µF, RS = 5 Operation Junction temperature Storage , 10 21 900 1500 9 32 180 230 ­20 ~ 125 Conditions VDM = 3/4 VDRM, VD = 3000V, LC = 0.3µH , 6500V, Tj = 125°C VDM = 6500V, VGK = ­2V, Tj = 125°C VRG = 21V, Tj = 125°C VD = 3000V, VGK = ­2V, Tj = 125°C (Expo. wave) IT = 1500A, VD = 3000V, di/dt = 1000A/µs, Tj = 125°C CS = 0.2µF, RS = 5 IGM
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C4520X7R3D ISO8802-3 CC180 C4520X tdk reflow 2003/11/CE

ASC-5S15D

Abstract: ASC-12D torage tem perature M ounting force required W eight Conditions VD = 3000V, VDM = 5500V, Tj = 125 , 60Hz VD = 3000V, IGM = 90A, Tj = 125°C Ratings 6000 3100 2000 40 6.7 X 106 500 10 22 200 2400 2000 , 22V Tj = 125°C, VD = 3000V, VDM = 5500V, V g k = -2 V Tj = 125°C, Itm = 6000A, IGM = 90A, V d = 3000V
ARCH Electronics
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ASC-12S ASC-24S ASC-15S ASC-5S15D ASC-12D ASC-15D 5S/12S

MKK400-D-25-01

Abstract: B25667A4197A375 www.johansondielectrics.com HIGH VOLTAGE POLYTERM® AVAILABILITY - NP0 DIELECTRIC 5000V 4000V 2211 3000V 2000V 1000V Y2 630V â'¢ 500V X1Y2 630V 500V X2Y3 5000V 4000V 3000V 2000V 1000V 3000V 2000V 1000V 1812 â'¢ 630V â'¢ 500V â'¢ 1808 â'¢ â'¢ 3000V 1000V â'¢ 1210 2000V 630V â'¢ 630V 500V 1206 1000V 0805 500V , www.johansondielectrics.com HIGH VOLTAGE POLYTERM® AVAILABILITY - NP0 DIELECTRIC 5000V 4000V 3000V 2000V 630V
Siemens Matsushita Components
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B25667-A2157-A175 MKK400-D-25-01 B25667A4197A375 MKK400-D-12 siemens 230 96 B25667-A4467-A3 3x82 MKK230-I-2 B25667-A2207-A175 MKK230-I-3 B25667-A6507-A375
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