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EL5811IREZ Intersil Corporation 1 CHANNEL, VIDEO AMPLIFIER, PDSO28, LEAD FREE, HTSSOP-28 visit Intersil
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EL5811IREZ-T13 Intersil Corporation 1 CHANNEL, VIDEO AMPLIFIER, PDSO28, LEAD FREE, HTSSOP-28 visit Intersil
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EL5427CLZ-T13 Intersil Corporation 12 BUFFER AMPLIFIER, QCC32, LEAD FREE, EXPOSED PAD, LPP-32 visit Intersil
EL5427CLZ Intersil Corporation 12 BUFFER AMPLIFIER, QCC32, LEAD FREE, EXPOSED PAD, LPP-32 visit Intersil

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30-Lead

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: f 9 I VITELIC ADVANCED V105HJ8/9 (256K x 8, 256K x 9) CMOS WRITE-PER-BIT MEMORY MODULE Description Features The V105HJ8/9 Memory Module is organized as 262,144 x 8 (or 9) bits in a 30-lead single-in-line module. The 256K x 8 memory module uses two Vitelic 256K x 4 (Write/Bit) DRAMs. The 256K x 9 memory module uses two Vitelic 256K x 4 (Write/Bit) DRAMs and one Vitelic 256K x 1 , organization) Single 5 V ±10% supply All I/O are fully TTL compatible Standard 30-lead single-in-line -
OCR Scan
V105HJ V10SHJ8/9 V105H
Abstract: organization) â  Single 5 V +10% supply â  All I/O are fully TTL compatible â  Standard 30-lead single-in-line module The V105AJ8/9 Memory Module is organized as 262,144 x 8 (or 9) bits in a 30-lead -
OCR Scan
V105A

NTE1842

Abstract: Select Input A Inverter Input +5V Output NTE1838 30-Lead DIP, See Diag. 536 Video/Chroma , -Lead SIP, See Diag. 476 LED EVc lc GND . ] Detèctor Output NTE1845 30-Lead DIP, See
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NTE1842 NTE1834 NTE1835 NTE1840 NTE1839 NTE1843 NTE1844

flyback tv sharp

Abstract: pilot REFERENCE SIGNAL equalizer N T E ELECTRONICS INC S2E D ^3125*) 000505*1 453 « N T E LINEAR INTEGRATEDCIRCUITS . Color TV Video, Chroma, Deflection Circuit, Vcc = 12V1Vp 2nd BPA Sharp Video Tone Video Tone VR Contrast Contrast VR Pedestal Clamp Bright ' Bright V R /H V out R-Y Output G -Y Output Q B-Y Output Q Color Killer Q Tint f £ VCO Q Tint VR ^ 3 2 ^ 30-Lead DIP, See Dlag. 536 j _ VCO , | Equalizer Output Q j RF AGC Delay Q Vcc (VIF) r a 30-Lead DIP, See Dlag. 536 jQ Video input jU Control
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OCR Scan
flyback tv sharp pilot REFERENCE SIGNAL equalizer switch mode inverter circuit diagrams pilot equalizer 12V1V NTE7015 NTE7020
Abstract: E 2 ) Vcc Comp Input , NTE7008 30-Lead DIP, See Diag. 536 Color TV Video, Chroma, Deflection Circuit, Vcc Q VZ/+31V VT -
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NTE7000 HTE7001 NTE7002 NTE7004 NTE7005 NTE7006
Abstract: MOTOROLA SC (M E M O R Y / A S I C ) MOTOROLA SSE D h3b7251 GGfiVSll 3L.T *11013 7 m SEMICONDUCTOR TECHNICAL DATA - ~ -
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MCM91600 MCM9L1600 MCM517400 MCM91600-60 MCM91600-70 MCM91600-80

mcm517400

Abstract: motorola 16M CMOS DRAM SEMICONDUCTOR TECHNICAL DATA Product Preview MCM81600 MCM8L1600 16M x 8 Bit Dynamic Random Access Memory Module The MCM81600 is a dynamic random access memory (DRAM) module organized as 16,777,216 x 8 bits. The module is a 30-lead single-in-line memory module (SIMM) consisting of eight MCM517400 DRAMs housed in 400 mil J-lead small out line packages (SOJ), mounted on a substrate along with a 0.22 (min) decoupling capacitor mounted under each DRAM. The MCM517400 is a CMOS high-speed dynamic
-
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motorola 16M CMOS DRAM MCM81600-60 MCM81600-70 MCM81600-80 MOTOD010

MA0940J00TASN60

Abstract: MA0940T00TASN60 Order this document by 5VFPMU9S/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA 4M x 9 5 V, FPM, Unbuffered DRAM Single-In-Line Memory Module (SIMM) 4 Megabyte · JEDEC­Standard 30­Lead Single­In­Line Memory Module (SIMM) 4M x 9 (4MB) 30­LEAD SIMM CASE 839A­01 SOJ CASE 839D­01 TSOP · Single 5 V , MOTOROLA DRAM 4M x 9 5 V FPM U PACKAGE DIMENSIONS 4M x 8 (4MB) 30­LEAD SIMM CASE 839A­01 -YQ , 10.04 10.28 2.54 ­­­ 5VFPMU9S 13 4M x 9 5 V FPM U 4M x 8 (4MB) 30­LEAD SIMM CASE
Motorola
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MA0940J00TASN60 MA0940T00TASN60 FPM RAM

Ras 1210

Abstract: DRAM 4M x 8 , Unbuffered DRAM Single-In-Line Memory Module (SIMM) 4 Megabyte 4M x 8 (4MB) SOJ 30­LEAD SIMM CASE 839A­01 · JEDEC­Standard 30­Lead Single­In­Line Memory Module (SIMM) · Single 5 V Power Supply , ) Organization 60 4M x 8 MB084CJ00TASN60 MB084CT00TASN60 TSOP 30­LEAD SIMM CASE 839D­01 KEY , DIMENSIONS 4M x 8 (4MB) 30­LEAD SIMM CASE 839A­01 -YQ 0.08 (0.003) A B COMPONENT AREA V , 3.22 6.23 6.47 0.13 0.38 82.02 82.27 10.04 10.28 2.54 ­­­ TSOP 30­LEAD SIMM CASE 839D­01
Motorola
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Ras 1210 DRAM 4M x 8

839D-01

Abstract: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 5VFPMU9S/D 4M DRAM S in g le-ln -L in e M em ory Module (SIMM) 4 Megabyte · JEDEC-Standard 30-Lead Single-ln-Line Memory Module , 9 5 V, FPM, Unbuffered 4M X 9 (4MB) 30-LEAD SIMM CASE 839A-01 SOJ CASE 839D-01 TSOP FRONT VIEW , V . FPM · U PACKAGE DIMENSIONS 4M X 8 (4MB) 30-LEAD SIMM CASE 839A-01 NOTES: 1. Dim e n s io n , MOTOROLA DRAM 5VFPMU9S 13 4M X 9 · 5 V · FPM · U 4M X 8 (4MB) 30-LEAD SIMM CASE 839D-01 n
-
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MOTOSA12

3-65-N

Abstract: DIODE H5y (30-lead package) VM365N630 VM365N430 Page Location 31 32 33 34 VTC Inc., 2800 East Old Shakopee , 3-31 bV P R E A M P S VM3600 Series VM 365N 830 (30-lead package) 8-CHANNEL CONNECTION , PREAMPS 8-Channel 30-lead SSOP VM365N830SS30J Specific CHARACTERISTICS See the general data sheet
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3-65-N DIODE H5y 365N630 VM365N630SSJ 365N430 VM365N430SSK VM365N430VSK

pll dip switch

Abstract: 3 phase phase ac motor control circuit Output F3 Bandswitch Output F2 Bandswitch Output F1 Vcc 1 Output to TV PLL Input 30-Lead DIP, See Diag
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pll dip switch 3 phase phase ac motor control circuit OP 536 g VT NTE

MCM511000

Abstract: MCM81000S MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM81000 Product Preview 1M x 8 Bit D ynam ic Random A c c e ss M e m o ry M od ule The MCM81000L and MCM81000S are 8M, dynamic random access memory (DRAM) modules organized as 1,048,576 x 8 bits. The modules are 30-lead single in-line memory modules (SIM M ) or 30-pin single-in-line packages (SIP) consist ing of eight MCM511000 D R A M s housed in a 20/26 J-lead small outline pack age (SOJ) and mounted on a substrate along with a 0.22 pF decoupling
-
OCR Scan
MCM81000-80 MCM81000-10 MCM81000-S0 30-PIN MCM81000SJ CM81000S

55425

Abstract: SS42s VARIATION VM365N830 VM365N830 (30-lead package) VM365N630 VM365N430 Page Location 30 31 32 33 VTC Inc , , 612-853-5100 VM3600 Series VM 3 6 5 M8 3 0 (30-lead package) 8-CHANNEL CONNECTION DIAGRAM HQX c z , H7Y M X CZZ IS m y czz r 4 H7X 1 -IS 8-Channel 30-lead SSOP VM365N830SS30J Specific
-
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55425 SS42s VM36SN430VSK
Abstract: Deflection Output I Deflection Output I GND I GND NTE1771 30-Lead DIP, See Diag. 536 Video Chroma -
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NTE1765 NTE1766 NTE1767 NTE1773 NTE1774 NTE1775

vco afc sync separator

Abstract: Chroma Deflection Circuit for Color TV, V c c » 12V TVp Drive Output 2 Enable 30-Lead DIP, See
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vco afc sync separator NTE1761 NTE1762

mcm91000s

Abstract: motorola 30-pin simm memory dynamic MOTOROLA TECHNICAL DATA SEMICONDUCTOR MCM91000 Product Preview 1 M x 9 Bit Dynam ic Random Access M em ory M odule The MCM91000L and MCM91000S are 9M , dynamic random access memory (DRAM) modules organized as 1,048,576 x 9 bits. The modules are 30-lead singlein-line memory modules (SIMM) or 30*pin single-in-line packages (SIP) consist ing o f nine MCM511000 DRAMs housed in a 20/26 J-lead small outline package (3 0 J ) and mounted on a substrate along w ith a 0.22 ¿iF decoupling capacitor mounted
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OCR Scan
MCM91000-80 motorola 30-pin simm memory dynamic simm 30-pin 9-bit MCM91000-80- MCM91000-10

"FM receiver"

Abstract: Newbridge Microsystems -28 b)CA407 30-LEAD VINSON QUILL The quill package Is available for samples only. Figure 3 : CA407 PIN
-
OCR Scan
2N4403 Newbridge Microsystems audio frequency discriminator Newbridge fm receiver CA404/CA407 CA406 CA404/CA406 T-77-05-09 T-77-
Abstract: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Product Preview MCM91600 MCM9L1600 16M x 9 Bit Dynamic Random Access Memory Module The M C M 9 1 600 is a 36M dynam ic random a cc e ss m em ory (D R A M ) m odule organized as 16,777,218 x 8 bits. The m odule is a 30-lead single-in-line m em ory m odule (SIMM) consisting of nine M C M 5 1 7 4 0 0 D R A M s housed in 400 mil J-lead sm all outline packag es (SO J), m ounted on a substrate along with a 0.22 (jF (min) decoupling capacitor m ounted under -
OCR Scan
Abstract: MOTOROLA SC ( MEMORY/ASIC) MOTOROLA 5ÛE D b3b7251 OOB74bE T 4 0 H 0 T 3 2J> - f g _ - o SEMICONDUCTOR TECHNICAL DATA Product Preview MCM81600 MCM8L1600 16M x 8 Bit Dynamic Random Access Memory Module The MCM81600 is a dynamic random access memory (DRAM) module organized as 16,777,216 x 8 bits. The module is a 30-lead single-in-line memory module (SIMM) consisting ot eight MCM517400 DRAMs housed in 400 mil J-lead small out line packages (SOJ), mounted on a substrate -
OCR Scan
OOB74 AO-A11 A0-A11 AD-A11
Abstract: organization) â  Single 5 V +10% supply â  All I/O are fully TTL compatible â  Standard 30-lead single-in-line module The V105AJ8/9 Memory Module is organized as 262,144 x 8 (or 9) bits in a 30-lead -
OCR Scan
98ASH70693A 979D-Q2 979D-02 5M-1990 979B-02
Abstract: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 5VFPMU9S/D 4M DRAM S in g le-ln -L in e M em ory Module (SIMM) 4 Megabyte · JEDEC-Standard 30-Lead Single-ln-Line Memory Module , 9 5 V, FPM, Unbuffered 4M X 9 (4MB) 30-LEAD SIMM CASE 839A-01 SOJ CASE 839D-01 TSOP FRONT VIEW , V . FPM · U PACKAGE DIMENSIONS 4M X 8 (4MB) 30-LEAD SIMM CASE 839A-01 NOTES: 1. Dim e n s io n , MOTOROLA DRAM 5VFPMU9S 13 4M X 9 · 5 V · FPM · U 4M X 8 (4MB) 30-LEAD SIMM CASE 839D-01 n Vishay BCcomponents
Original
B25/85

DFG2A8

Abstract: : High,Open LA2: LA1 Low : Low · 30°lead angle 15°lead angle 7.5°lead angle · 0°lead angle
Hitachi Semiconductor
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DFG2A8 62MIN 28MIN
Abstract: VARIATION VM365N830 VM365N830 (30-lead package) VM365N630 VM365N430 Page Location 30 31 32 33 VTC Inc , , 612-853-5100 VM3600 Series VM 3 6 5 M8 3 0 (30-lead package) 8-CHANNEL CONNECTION DIAGRAM HQX c z , H7Y M X CZZ IS m y czz r 4 H7X 1 -IS 8-Channel 30-lead SSOP VM365N830SS30J Specific Laser Components
Original
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