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Part : 2SK1299-90L Supplier : Renesas Electronics Manufacturer : Rochester Electronics Stock : 1,052 Best Price : $0.92 Price Each : $0.92
Part : 2SK1299L-E Supplier : Renesas Electronics Manufacturer : Rochester Electronics Stock : 456 Best Price : $0.58 Price Each : $0.58
Part : 2SK1299STL-E Supplier : Renesas Electronics Manufacturer : Rochester Electronics Stock : 2,670 Best Price : $0.58 Price Each : $0.58
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2sk1299 Datasheet

Part Manufacturer Description PDF Type
2SK1299 Hitachi Semiconductor Silicon N-Channel MOS FET Original
2SK1299 Hitachi Semiconductor Power Transistors Data Book Scan
2SK1299 N/A Catalog Scans - Shortform Datasheet Scan
2SK1299 N/A Catalog Scans - Shortform Datasheet Scan
2SK12996 Toshiba N CHANNEL MOS TYPE (HIGH SPEED, HIGH VOLTAGE SWITCHING, CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS) Scan
2SK1299(L) Hitachi Semiconductor Power switching MOSFET Original
2SK1299L Hitachi Semiconductor Mosfet Guide Original
2SK1299L Hitachi Semiconductor Silicon N-Channel MOS FET Original
2SK1299L Renesas Technology Silicon N-Channel MOS FET Original
2SK1299L N/A Shortform Datasheet & Cross References Data Scan
2SK1299(L)(S) N/A FET Data Book Scan
2SK1299(S) Hitachi Semiconductor Power switching MOSFET Original
2SK1299S Hitachi Semiconductor Silicon N-Channel MOS FET Original
2SK1299S Hitachi Semiconductor Mosfet Guide Original
2SK1299S Renesas Technology Silicon N-Channel MOS FET Original
2SK1299S N/A Shortform Datasheet & Cross References Data Scan

2sk1299

Catalog Datasheet MFG & Type PDF Document Tags

Hitachi DSA001651

Abstract: 2SK1299 2SK1299(L), 2SK1299(S) Silicon N-Channel MOS FET November 1996 Application High speed power , . Source 4. Drain G S 2SK1299(L), 2SK1299(S) Absolute Maximum Ratings (Ta = 25GC) Item , , duty cycle d 1% 2. Value at TC = 25qC 2 qC qC 2SK1299(L), 2SK1299(S) Electrical , Note ID = 2 A, VGS = 10 V, RL = 15 : 1. Pulse test 3 2SK1299(L), 2SK1299(S) Maximum Safe , 25°C 75°C TC = ­25°C 1 2 3 4 Gate to Source Voltage VGS (V) 5 2SK1299(L), 2SK1299(S
Hitachi
Original
Hitachi DSA001651 W301

2SK1299

Abstract: Hitachi DSA00276 2SK1299(L), 2SK1299(S) Silicon N-Channel MOS FET ADE-208-1257 (Z) 1st. Edition Mar. 2001 , 2 3 2 3 2SK1299(L), 2SK1299(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source , ­55 to +150 Unit V V A A A W °C °C 2 2SK1299(L), 2SK1299(S) Electrical Characteristics (Ta , ) 3 2SK1299(L), 2SK1299(S) Power vs. Temperature Derating 30 Channel Dissipation Pch (W , Gate to Source Voltage VGS (V) 5 4 2SK1299(L), 2SK1299(S) Drain to Source Saturation Voltage
Hitachi Semiconductor
Original
Hitachi DSA00276 D-85622

2SK1299

Abstract: products contained therein. 2SK1299(L), 2SK1299(S) Silicon N-Channel MOS FET ADE-208-1257 (Z) 1st , 2 3 2 3 D 1. Gate 2. Drain 3. Source 4. Drain G S 2SK1299(L), 2SK1299(S , 2SK1299(L), 2SK1299(S) Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit , . Pulse test 3 2SK1299(L), 2SK1299(S) Maximum Safe Operation Area Power vs. Temperature , Source Voltage VGS (V) 5 2SK1299(L), 2SK1299(S) Static Drain to Source on State Resistance vs
Hitachi Semiconductor
Original

2sk1299

Abstract: 2SK1299 L , 2SK1299 S Silicon N-Channel MOS FET Application DPAK-1 High speed power , - * PW 10 µs, duty cycle 1 % * Value at TC = 25 °C 2SK1299 L , 2SK1299 S Table 2 , - * Pulse Test 2SK1299 L , 2SK1299 S Maximum Safe Operation Area Power vs. Temperature , VGS (V) 5 2SK1299 L , 2SK1299 S Static Drain to Source on State Resistance vs. Drain , ID (A) 5 2SK1299 L , 2SK1299 S Body to Drain Diode Reverse Recovery Time Typical
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Original

Hitachi DSA002780

Abstract: 2SK1299(L), 2SK1299(S) Silicon N-Channel MOS FET Application High speed power switching , Outline DPAK-1 4 4 1 1 D G 1. Gate 2. Drain 3. Source 4. Drain S 2 3 2 3 2SK1299(L), 2SK1299(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage , °C °C 2 2SK1299(L), 2SK1299(S) Electrical Characteristics (Ta = 25°C) Item Drain to source , cutoff voltage Static Drain to source on state resistance VGS(off) RDS(on) 3 2SK1299(L), 2SK1299(S
Hitachi
Original
Hitachi DSA002780
Abstract: 263 2SK1299(L), 2SK1299ÇS) Maximum Safe Operation Area 50 Pch (W) Operation ¡n'thisarea]. i s , 2SK1299(L), 2SK1299(S) Silicon N-Channel MOS FET HITACHI Application High speed power , solenoid drive Outline 261 2SK1299(L), 2SK1299(S) Absolute Maximum Ratings (Ta = 25°C) Item , °C HITACHI 262 2SK1299(L), 2SK1299(S) Electrical Characteristics (Ta = 25°C) Item Drain to source , ) HITACHI 264 2SK1299(L), 2SK1299(S) Drain to Source Saturation Voltage vs. Gate to Source Voltage 2.0 -
OCR Scan

Hitachi DSA00279

Abstract: 2SK1299S 2SK1299(L), 2SK1299(S) Silicon N-Channel MOS FET Application High speed power switching Features · · · · Low on-resistance High speed switching Low drive current 4 V gate drive device Can be , Outline 2SK1299(L), 2SK1299(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage , cutoff voltage Static Drain to source on state resistance VGS(off) RDS(on) 2 2SK1299(L), 2SK1299(S) 3 2SK1299(L), 2SK1299(S) 4 2SK1299(L), 2SK1299(S) 5 2SK1299(L), 2SK1299(S) When
Hitachi
Original
Hitachi DSA00279
Abstract: HITACHI 3 2SK1299ÇL), 2SK1299ÇS) M axim um S afe O peration A rea 50 Operation in this a re a , Gate to Source Voltage VGS (V) 5 2SK1299ÇL), 2SK1299ÇS) HITACHI 5 2SK1299ÇL), 2SK1299ÇS , 2.0 2SK1299ÇL), 2SK1299ÇS) Normalized Transient Thermal Im pedance vs. Pulse Width (0 "O , 2SK1299(L), 2SK1299(S) Silicon N-Channel MOS FET HITACHI November 1996 Application High , motor drive, DC-DC converter, power switch and solenoid drive Outline 2SK1299(L), 2SK1299(S -
OCR Scan

2SK1299

Abstract: Hitachi DSA00347 2SK1299(L), 2SK1299(S) Silicon N-Channel MOS FET Application High speed power switching , G S 2SK1299(L), 2SK1299(S) Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings , , duty cycle 1% 2. Value at TC = 25°C 2 2SK1299(L), 2SK1299(S) Electrical Characteristics (Ta = , /dt = 50 A/µs Note: 1. Pulse test 3 2SK1299(L), 2SK1299(S) Maximum Safe Operation Area , ­25°C 3 1 2 4 Gate to Source Voltage VGS (V) 5 2SK1299(L), 2SK1299(S) Static Drain to
Hitachi Semiconductor
Original
Hitachi DSA00347

1A06

Abstract: 2SK1299 L , 2SK1299 S Silicon N-Channel MOS FET Application DPAK-1 High speed power , - * PW 10 µs, duty cycle 1 % * Value at TC = 25 °C 2SK1299 L , 2SK1299 S Table 2 , 2SK1299 L , 2SK1299 S Power vs. Temperature Derating 30 Channel Dissipation Pch (W) 50 Maximum Safe , Voltage VGS (V) 5 2SK1299 L , 2SK1299 S Drain to Source Saturation Voltage vs. Gate to Source , ) 5 2SK1299 L , 2SK1299 S Body to Drain Diode Reverse Recovery Time 500 Reverse Recovery Time
Hitachi Semiconductor
Original
1A06

2SK129

Abstract: 2SK1299 2SK1299(C), 2SK1299(S ®Type SILICON N-CHANNEL MOS FET â  Â« ft â'¢fii-väi/Lo â'¢ mìà : K-7 'f v", ij yvy^i KS&ft, DC-DC 3 y O 2.4 O 3 l. Gate 2.,4. Drain 3. Source (Dimensions in mm) ABSOLUTE MAXIMUM RATINGS (7a=25°C) Item Symbol Rating Unit Drain-Source Voltage Voss 100 V Gate-Source Voltage Vgss ±20 V Drain Current Id 3 A Drain Peak Current loiputse)* 12 A Body-Drain Diode ^ Reverse Drain Current Idr 3 A Channel Dissipation Pc* 20 W Channel Temperature Tch 150 'C Storage
-
OCR Scan
2SK129 ID2K VDS-10V VD5-10V L-15H

2sj217

Abstract: pf0030 hitachi 2SK1299 2SK1254 2SK1949 2SJ221 2SJ222 2SJ296 2SK740 2SK1301 2SK1306 2SK1620 2SK1918 2SJ280 2SJ297 2SK822 , 0.25 0.15 0.18 4 30 255 400 2SK1299 100 3 20 0.3 0.45 0.25 0.35 4 40 220 400 2SK1254 120 3 20
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OCR Scan
KWSA103 PF0030 PF0040 PF0042 2SJ214 2SJ220 2sj217 pf0030 hitachi hitachi S Mosfet pf0042 303L/3 HWSA10I HWSB10I HWSA01

HITACHI Power MOSFET Arrays

Abstract: 2sk1299 2SK430 2SJ245 2SJ279 2SK1299 2SK1254 2SK1949 2SJ221 2SJ222 2SJ296 2SK740 2SK1301 2SK1306 2SK1620 2SK1918 , 10 0.4 0.5 0.25 0.35 2 19 120 240 2SK974 3 20 0.2 0.25 0.15 0.18 4 30 255 400 2SK1299 100 3 20
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OCR Scan
4AK17 2SK972 4AK15 2SK971 4AK16 2SK970 HITACHI Power MOSFET Arrays 2SK975 2SK1919 Hitachi Scans-001

2SK44

Abstract: 2SJ182 2SK1665 DC-DC Converter DC24V 2SJ278 2SK430 2SJ245 2SJ279 2SK1299 2SK1254 2SK1949 2SJ221 2SJ222 2SJ296 , 2SK973 60 2 10 0.4 0.5 0.25 0.35 2 19 120 240 2SK974 3 20 0.2 0.25 0.15 0.18 4 30 255 400 2SK1299
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OCR Scan
2SK579 2SK580 2SK1151 2SK1152 2SK1153 2SK513 2SK44 2SJ182 2sk1877 mosfet hitachi 2SK415 2SK1154

2SK1271

Abstract: 2SK1272 DSS ±20 s 40 D 50 ±10« ±16 250« 50 2 10 Im 22 35 10 20 2SK1299(L)(S) B iL Motor/Relay-D MOS N , =30V 293 GDS 2SK1298 400 45 0 10 0. 35 10 2 ton=40ns, toff=220nstyp ID=2A, VDD=30V 150 GDS 2SK1299(L
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OCR Scan
2SK1271 2SK1272 2SK1273 2SK1274 2SK1276 2SK1277 2SK1278 2SX1275

flyback 200w

Abstract: 2SK1635 2SK1665 DC-DC Converter DC24V 2SJ278 2SK430 2SJ245 2SJ279 2SK1299 2SK1254 2SK1949 2SJ221 2SJ222 2SJ296
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OCR Scan
2SK1770 2SK1094 2SK1635 2SK1762 2SK1671 flyback 200w dc dc flyback 200w 2SK119 2sk1328 2SK1862 2SK1155 2SK1156 2SK1157 2SK1158 2SK1313

2SJ235

Abstract: 2SJ299 2SK1665 DC-DC Converter DC24V 2SJ278 2SK430 2SJ245 2SJ279 2SK1299 2SK1254 2SK1949 2SJ221 2SJ222 2SJ296 , 10 0.4 0.5 0.25 0.35 2 19 120 240 2SK974 3 20 0.2 0.25 0.15 0.18 4 30 255 400 2SK1299 100 3 20
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OCR Scan
2SJ234 2SJ235 2SJ299 2SK1878 2sj2 high voltage p channel mosfet 2sk mosfet 2SK1314 2SK1540 2SK1541 2SK1626 2SK1159 2SK1160

2cv1

Abstract: 2SJ113 2SK1665 DC-DC Converter DC24V 2SJ278 2SK430 2SJ245 2SJ279 2SK1299 2SK1254 2SK1949 2SJ221 2SJ222 2SJ296
-
OCR Scan
2SK416 2SJ113 2SK414 2cv1 2sj119 121A-4 HITACHI 2SJ* TO-3 2SK1161 2SK1162 2SK1163 2SK1206 2SK1225 2SK1315

viewfinder

Abstract: cold cathode inverter 15.7kHz Ton 8/iSec. 2SK1299 100/iH Q L C 22/j F 'Product of USHIO DENKI Co., Ltd. ·Input
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OCR Scan
viewfinder cold cathode inverter Ushio inverter design for fluorescent lamps Fluorescent "reference design" CST114

MBN300A6

Abstract: flyback 200W 2SK1665 DC-DC Converter DC24V 2SJ278 2SK430 2SJ245 2SJ279 2SK1299 2SK1254 2SK1949 2SJ221 2SJ222 2SJ296
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OCR Scan
GN12015C GN12030E GN12050E MBN300A6 UPS schematics DC MOTOR SPEED CONTROL USING IGBT Hitachi Three-Phase Motor Driver inverter circuit schematics GN4530C GN6010A GN6015A GN6020C GN6030C GN6050E

2sk1299

Abstract: 2SK129 Instruments Inc. 2SK1299 : SANYO Electric Co., Ltd. RB415D : ROHM Co., LTD DE5SC3ML : SHINDENGEN , CS2 -IN2 FB2 CSCP 2SK1299 10 k 100 k 10 k VXCS2 B 10 k 0.022 µF CS1 -IN1 FB1 0.1 µF 2SK1299 10 k 100 k ON/OFF Vin 10 k VXCS1 ON/OFF
Fujitsu
Original
MB3821 FPT-24P-M03 MB3821PFV Si9410 DS04-27221-2E

8125

Abstract: 2SK1299 Instruments Inc. 2SK1299 : SANYO Electric Co., Ltd. RB415D : ROHM Co., LTD DE5SC3ML : SHINDENGEN , CS2 -IN2 FB2 CSCP 2SK1299 10 k 100 k 10 k VXCS2 B 10 k 0.022 µF CS1 -IN1 FB1 0.1 µF 2SK1299 10 k 100 k ON/OFF Vin 10 k VXCS1 ON/OFF
Fujitsu
Original
8125 DS04-27221-4E F0308

shindengen m

Abstract: 8125 0.1 µF 2SK1299 DE5SC3ML 150 µF A IO 2 VO2 21 k 13 k Vin 100 k FB2 0.022 µF , (0) 2SK1299 DE5SC3ML 150 µF B 100 k 1 µA CSCP 22 0.1 µF Si9410 : Siliconix Co , . RB415D : ROHM Co., LTD 2SK1299 : SANYO Electric Co., Ltd. S-81250 : Seiko Instruments Inc. Mode select
Fujitsu
Original
shindengen m DS04-27221-3E
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