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2sd2012 Datasheet

Part Manufacturer Description PDF Type Ordering
2SD2012 N/A Transistor Shortform Datasheet & Cross References
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1 pages,
80.08 Kb

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2SD2012 N/A Japanese Transistor Cross References (2S)
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1 pages,
34.85 Kb

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2SD2012 N/A Catalog Scans - Shortform Datasheet
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1 pages,
42.25 Kb

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2SD2012 N/A Catalog Scans - Shortform Datasheet
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1 pages,
43.56 Kb

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2SD2012 N/A The Transistor Manual (Japanese) 1993
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2 pages,
92.55 Kb

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2SD2012 N/A Transistor Substitution Data Book 1993
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1 pages,
43.75 Kb

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2SD2012 N/A Shortform Data and Cross References (Misc Datasheets)
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1 pages,
42.48 Kb

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2SD2012 STMicroelectronics TRANS GP BJT NPN 60V 3A 3TO-220F
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5 pages,
123.23 Kb

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2SD2012 Toshiba Silicon NPN transistor for audio frequency power amplifier applications
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3 pages,
163.15 Kb

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2SD2012 Toshiba TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE
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4 pages,
183.15 Kb

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2sd2012

Catalog Datasheet Results Type PDF Document Tags
Abstract: 2SD2012 NPN 2SD2012 : mm · · : PC = 25 W (Tc = 25°C) : VCE (sat) = , : (//) 2-10R1A 2-10R1A (/ ) : 1.7 g () ( ) () 1 2009-12-01 2SD2012 (Ta = 25°C , ]] RoHS RoHS (RoHS) 2003 1 27 (EU 2002/95/EC 2002/95/EC) 2 2009-12-01 2SD2012 IC ­ VCE hFE , VCE (V) 2009-12-01 2SD2012 rth ­ tw 100 rth (°C/W) 50 30 (1) (2 , ) 2009-12-01 2SD2012 · · · · "" · · · ... Original
datasheet

5 pages,
208.66 Kb

2SD2012 D2012 br d2012 2SD2012 abstract
datasheet frame
Abstract: 2SD2012 NPN 2SD2012 : mm · · : PC = 25 W (Tc = 25°C) : VCE (sat) = , : (//) 2-10R1A 2-10R1A (/ ) : 1.7 g () ( ) () 1 2009-12-01 2SD2012 (Ta = 25°C , ]] RoHS RoHS (RoHS) 2003 1 27 (EU 2002/95/EC 2002/95/EC) 2 2009-12-01 2SD2012 IC ­ VCE hFE , VCE (V) 2009-12-01 2SD2012 rth ­ tw 100 rth (°C/W) 50 30 (1) (2 , ) 2009-12-01 2SD2012 · · · · "" · · · ... Original
datasheet

5 pages,
208.65 Kb

T D2012 2SD2012 br d2012 D2012 2SD2012 abstract
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Abstract: 2SD2012 NPN 2SD2012 : mm · · : PC = 25 W (Tc = 25°C) · : VCE , : 2-10R1A 2-10R1A (//) (/ : 1.7 g () ) () () 1 2007-06-07 2SD2012 (Ta = 25°C , D2012 D2012 () No. (: : ) 2 2007-06-07 2SD2012 IC ­ VCE hFE ­ IC 1000 3.0 , 2SD2012 rth (°C/W) rth ­ tw 100 (1) (2) 50 30 (1) 10 5 3 (2) 1 0.5 0.3 0.1 10-3 10-2 10-1 1 10 102 tw (s) 4 2007-06-07 2SD2012 ... Original
datasheet

5 pages,
198.21 Kb

2SD2012 br d2012 D2012 2SD2012 abstract
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Abstract: 2SD2012 ® NPN SILICON POWER TRANSISTOR s s s HIGH DC CURRENT GAIN LOW SATURATION , PURPOSE SWITCHING s DESCRIPTION The 2SD2012 is a silicon NPN power transistor housed in TO-220F , C C 1/5 2SD2012 THERMAL DATA R thj-case Thermal Resistance Junction-case Max o , 2SD2012 DC Current Gain Collector Emitter Saturation Voltage Base Emitter On Voltage 3/5 2SD2012 TO-220F MECHANICAL DATA mm DIM. MIN. TYP. inch MAX. MIN. TYP. MAX. A ... Original
datasheet

5 pages,
123.23 Kb

2sd2012 transistor 2SD2012 2SD2012 abstract
datasheet frame
Abstract: Inchange Semiconductor Product Specification 2SD2012 Silicon NPN Power Transistors DESCRIPTION ·With TO-220F package ·Complement to type 2SB1366 2SB1366 ·Low collector saturation voltage ·Collector power dissipation: PC=25W(TC=25) APPLICATIONS ·Audio frequency power amplifier and general purpose , -55~150 Inchange Semiconductor Product Specification 2SD2012 Silicon NPN Power , Inchange Semiconductor Product Specification 2SD2012 Silicon NPN Power Transistors PACKAGE ... Original
datasheet

3 pages,
79.7 Kb

2SB136 2SB1366 2sd2012 2SD2012 2SD2012 abstract
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Abstract: SavantIC Semiconductor Product Specification 2SD2012 Silicon NPN Power Transistors DESCRIPTION ·With TO-220F package ·Complement to type 2SB1366 2SB1366 ·Low collector saturation voltage ·Collector power dissipation: PC=25W(TC=25 ) APPLICATIONS ·Audio frequency power amplifier and general purpose , -55~150 SavantIC Semiconductor Product Specification 2SD2012 Silicon NPN Power , Outline dimensions 3 2SD2012 ... Original
datasheet

3 pages,
200.03 Kb

2SD2012 2sb1366 2SD2012 abstract
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Abstract: TO SH IBA TOSHIBA TRANSISTOR 2SD2012 AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS 2SD2012 SILICON NPN TRIPLE DIFFUSED TYPE Unit in mm r · · · High DC Current Gain : hpE (1) - 100 (Min.) Low Saturation Voltage : v CE(sat) = I-0 v (Max.) High Power Dissipation : P c = 25 W (Tc = 25°C) RATING 60 60 7 3 0.5 2.0 25 150 -5 5 -1 5 0 10 ±0.3 0 o ^3.2 ± 0.2 CO 2.7±Q 2 cn ro 1.1 , 2SD2012 TO SH IBA 2SD2012 rth - tw 3 2 00 1 - 08-23 TO SH IBA 2SD2012 ... OCR Scan
datasheet

4 pages,
185.52 Kb

transistor 2sd2012 2SD2012 2SD2012 abstract
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Abstract: SILICON NPN TRIPLE DIFFUSED TY P E 2SD2012 Unit in 1Q3IIAX AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS. . High DC Current Gain . Low Saturation Voltage : VcE(sat)-l-0V(Max.)(Ic-2A, Ib =0.2A) . High Power Dissipation : Pc=25W (Tc=25°C) . Collector Metal (Fin) is Covered with Mold Resin (New TO-220 (IS , 100 100 320 1.0 1.0 UNIT UA t f A V V V MHz pF 1033 2SD2012 le ~ VCE Ic (a ) hpE - ÏC , 2SD2012 rth " TRANSIENT THERMAL RESISTANCE rt h (T/W) @ Ta=25*C 100 WITHOUT HEAT-SINK 'Tc = 25 ... OCR Scan
datasheet

3 pages,
72.42 Kb

2SD2012 2SD2012 abstract
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Abstract: MCC Features · · · omponents 20736 Marilla Street Chatsworth !"# $ % !"# 2SD2012 High DC Current Gain: hFE(1) =100 (Min.) Low Saturation Voltage: VCE(sat) =1.0V (Max.) High Power Dissipation: PC=25W (TC=25OC) NPN Silicon Power Transistors Rating 60 60 7.0 3.0 0.5 2.0 25 -55 to +150 , 2.50 2.90 .102 2.60 .024 .035 0.60 0.90 NOTE www.mccsemi.com Revision: 2 2003/07/09 2SD2012 MCC www.mccsemi.com Revision: 2 2003/07/09 2SD2012 MCC www.mccsemi.com Revision: 2 2003 ... Original
datasheet

3 pages,
425 Kb

datasheet abstract
datasheet frame
Abstract: TOSHIBA 2SD2012 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SD2012 AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS Unit in mm • High DC Current Gain : hFE(1) = 100 (Min.) • Low Saturation Voltage : VcEisat^i-OV (Max.) • High Power Dissipation : Pç; = 25W (Tc = 25°C) MAXIMUM RATINGS (Ta = , subject to change without notice. 1997-02-03 1/3 TOSHIBA 2SD2012 IC - VCE hFE - IC 3.0 2.5 2.0 , 5 10 30 50 100 300 COLLECTOR-EMITTER VOLTAGE VQE (V) 1997-02-03 2/3 TOSHIBA 2SD2012 1997-02-03 ... OCR Scan
datasheet

3 pages,
163.15 Kb

2sd2012 transistor 2SD2012 2SD2012 abstract
datasheet frame
Abstract: TOSHIBA 2SD2012 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SD2012 AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS Unit in mm • High DC Current Gain : hFE (1) = 100 (Min.) • Low , 2SD2012 IC - VCE hfe - ic 3.0 2.5 2.0 1.5 1.0 0.5 0' _ IC c 0- -k 80 o- £ 70 , 300 COLLECTOR-EMITTER VOLTAGE VQE (V) 2 2001-11-05 TOSHIBA 2SD2012 3 2001-11-05 TOSHIBA 2SD2012 RESTRICTIONS ON PRODUCT USE _000707E 000707E • TOSHIBA is continually working to improve the quality ... OCR Scan
datasheet

4 pages,
183.14 Kb

2SD2012 2SD2012 abstract
datasheet frame
Abstract: MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# 2SD2012 Features · · · · High DC Current Gain: hFE(1) =100 (Min.) Low Saturation Voltage: VCE(sat) =1.0V (Max.) High Power Dissipation: PC=25W (TC=25OC) Case Material: Molded Plastic. , 2006/05/18 2SD2012 MCC TM Micro Commercial Components www.mccsemi.com Revision: 3 2 of 4 2006/05/18 2SD2012 MCC TM Micro Commercial Components www.mccsemi.com Revision ... Original
datasheet

4 pages,
687.67 Kb

datasheet abstract
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Toshiba 25/10/1996 12.5 Kb XLS driv_ext-v2.xls

Shortform Datasheet Search Results

Part Manufacturer Description Shortform Datasheet Ordering
2SD2012 N/A Silicon NPN

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2SD2012 N/A AHP

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2SD2012 N/A Power, General Purpose

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2SD2012-G N/A Power, General Purpose

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2SD2012-Y N/A Power, General Purpose

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Fairchild Cross Reference Results

Fairchild Part Orderable Industry Part Manufacturer Type Family Description
KSD2012 KSD2012 Buy 2SD2012 Buy ON Semiconductor Close PowerBJT NPN Epitaxial Silicon Transistor
KSD880 KSD880YTU Buy 2SD2012 Buy Toshiba Direct PowerBJT NPN Epitaxial Silicon Transistor
TIP31A TIP31A Buy 2SD2012 Buy Toshiba Direct PowerBJT NPN Epitaxial Silicon Transistor

Infineon (Siemens) Cross Reference Results

Infineon (Siemens) Part Status Industry Part Manufacturer Description
BDP949E6327 Buy 2SD2012 Buy Toshiba

KEC Cross Reference Results

KEC Part Industry Part Manufacturer Category Description
KTC2026 Buy 2SD2012 Buy Toshiba BJT General Purpose Transistor

NTE Electronics Cross Reference Results

NTE Electronics Part Industry Part
NTE54 Buy 2SD2012 Buy

On Semiconductor Cross Reference Results

On Semiconductor Part Industry Part Manufacturer Type
TIP31AG Buy 2SD2012 Buy Toshiba Close
TIP31AG Buy 2SD2012(F) Buy Toshiba Close
TIP31AG Buy 2SD2012(Q) Buy Toshiba Close

Misc. Cross Reference Results

Part Similar Part Notes
2SD2012 Buy 2N3138 Buy
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2SD2012 Buy 2SD1406 Buy
2SD2012 Buy 2SD1480 Buy
2SD2012 Buy 2SD1585 Buy
2SD2012 Buy 2SD1666 Buy
2SD2012 Buy 2SD1913 Buy
2SD2012 Buy 2SD1944 Buy
2SD2012 Buy 2SD2058 Buy