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Part : 2SD2012 Supplier : STMicroelectronics Manufacturer : Newark element14 Stock : - Best Price : - Price Each : -
Part : 2SD2012(F) Supplier : Toshiba Manufacturer : Chip1Stop Stock : 200 Best Price : $2.44 Price Each : $2.75
Part : 2SD2012(F,J) Supplier : Toshiba Manufacturer : Chip1Stop Stock : 7,000 Best Price : $2.14 Price Each : $2.75
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2sd2012 Datasheet

Part Manufacturer Description PDF Type
2SD2012 STMicroelectronics TRANS GP BJT NPN 60V 3A 3TO-220F Original
2SD2012 Toshiba Audio Frequency Power Amplifier Original
2SD2012 Toshiba Low-Frequency Power Transistors (2SB Series, 2SD Series); Surface Mount Type: N; Package: TO-220NIS; Number Of Pins: 3; Viewing Angle: taping unavailable; Publication Class: Transistor for AC-DC converter; Application Scope: switching regulator; Part Number: 2SB1375 Original
2SD2012 Various Russian Datasheets Transistor Original
2SD2012 N/A Transistor Shortform Datasheet & Cross References Scan
2SD2012 N/A Japanese Transistor Cross References (2S) Scan
2SD2012 N/A Catalog Scans - Shortform Datasheet Scan
2SD2012 N/A Catalog Scans - Shortform Datasheet Scan
2SD2012 N/A The Transistor Manual (Japanese) 1993 Scan
2SD2012 N/A Transistor Substitution Data Book 1993 Scan
2SD2012 N/A Shortform Data and Cross References (Misc Datasheets) Scan
2SD2012 Toshiba Silicon NPN transistor for audio frequency power amplifier applications Scan
2SD2012 Toshiba TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE Scan
2SD2012 Toshiba NPN Transistor Scan
2SD2012(F,M) Toshiba 2SD2012 - TRANSISTOR NPN 60V 3A TO-220 Original

2sd2012

Catalog Datasheet MFG & Type PDF Document Tags

2SD2012

Abstract: 2sd2012 transistor 2SD2012 ® NPN SILICON POWER TRANSISTOR s s s HIGH DC CURRENT GAIN LOW SATURATION , PURPOSE SWITCHING s DESCRIPTION The 2SD2012 is a silicon NPN power transistor housed in TO , C C 1/5 2SD2012 THERMAL DATA R thj-case Thermal Resistance Junction-case Max o , 2SD2012 DC Current Gain Collector Emitter Saturation Voltage Base Emitter On Voltage 3/5 2SD2012 TO-220F MECHANICAL DATA mm DIM. MIN. TYP. inch MAX. MIN. TYP. MAX. A
STMicroelectronics
Original
2sd2012 transistor transistor 2SD2012
Abstract: SILICON NPN TRIPLE DIFFUSED TY P E 2SD2012 Unit in 1Q3IIAX AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS. . High DC Current Gain . Low Saturation Voltage : VcE(sat)-l-0V(Max.)(Ic-2A, Ib =0.2A) . High Power Dissipation : Pc=25W (Tc=25°C) . Collector Metal (Fin) is Covered with Mold Resin (New TO-220 (IS , 100 320 1.0 1.0 UNIT UA t f A V V V MHz pF 1033 2SD2012 le ~ VCE Ic (a ) hpE - ÏC , 2SD2012 rth " TRANSIENT THERMAL RESISTANCE rt h (T/W) @ Ta=25*C 100 WITHOUT HEAT-SINK 'Tc = 25 -
OCR Scan

2sd2012

Abstract: 2SD2012 ® NPN SILICON POWER TRANSISTOR I I I HIGH DC CURRENT GAIN LOW SATURATION , PURPOSE SWITCHING I DESCRIPTION The 2SD2012 is a silicon NPN power transistor housed in TO , 150 o C 1/5 2SD2012 THERMAL DATA R thj-case Thermal Resistance Junction-case Max , Curve 2SD2012 DC Current Gain Collector Emitter Saturation Voltage Base Emitter On Voltage 3/5 2SD2012 TO-220F MECHANICAL DATA mm DIM. MIN. TYP. inch MAX. MIN. TYP
STMicroelectronics
Original

D2012

Abstract: br d2012 2SD2012 NPN 2SD2012 : mm · · : PC = 25 W (Tc = 25°C) · : VCE , : 2-10R1A (//) (/ : 1.7 g () ) () () 1 2007-06-07 2SD2012 (Ta = 25 , D2012 () No. (: : ) 2 2007-06-07 2SD2012 IC ­ VCE hFE ­ IC 1000 3.0 , 2SD2012 rth (°C/W) rth ­ tw 100 (1) (2) 50 30 (1) 10 5 3 (2) 1 0.5 0.3 0.1 10-3 10-2 10-1 1 10 102 tw (s) 4 2007-06-07 2SD2012
Toshiba
Original
br d2012 20070701-JA

mg75n2ys40

Abstract: MG15N6ES42 2SC2349 2SC489 2SD526, 2SD880, 2SD1408, 2SD2012 2SC370 (G) 2SC1815 2SC386 2SC2349 2SC490 2SD526, 2SD880, 2SD1408, 2SD2012 2SC370K 2SC1815 2SC386A 2SC2349 2SC491 2SD526, 2SD880, 2SD1408, 2SD2012 2SC371 2SC1815 2SC387 2SC2347 2SC492 2SD526, 2SD880, 2SD1408, 2SD2012 2SC371 (G) 2SC1815 2SC387A 2SC2347 2SC493 2SD526, 2SD880, 2SD1408, 2SD2012 2SC372 (G) 2SC1815 2SC387A (G) 2SC2347 2SC494 2SD526, 2SD880, 2SD1408, 2SD2012
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Original
1S1658 mg75n2ys40 MG15N6ES42 2SK150A 2sk270a MG150n2ys40 MG8N6ES42 02BZ2 1S2092 1SZ5759 02CZ2 1S2094 2N3055
Abstract: 2SD2012 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2012 Audio Frequency Power Amplifier Applications â'¢ High DC current gain: hFE (1) = 100 (min) â'¢ Low saturation voltage , lead (Pb)-free package or lead (Pb)-free finish. 1 2004-07-07 2SD2012 IC â'" VCE 3.0 , ) 2004-07-07 2SD2012 rth â'" tw 100 (2) Infinite heat sink Tc = 25°C 30 Transient thermal , 75 100 Ambient temperature 3 125 Ta 150 175 (°C) 2004-07-07 2SD2012 Toshiba
Original

br d2012

Abstract: D2012 2SD2012 NPN 2SD2012 : mm · · : PC = 25 W (Tc = 25°C) : VCE (sat) = , : (//) 2-10R1A (/ ) : 1.7 g () ( ) () 1 2009-12-01 2SD2012 (Ta = 25 , ]] RoHS RoHS (RoHS) 2003 1 27 (EU 2002/95/EC) 2 2009-12-01 2SD2012 IC ­ VCE hFE , VCE (V) 2009-12-01 2SD2012 rth ­ tw 100 rth (°C/W) 50 30 (1) (2 , ) 2009-12-01 2SD2012 · · · · "" · · ·
Toshiba
Original

transistor d2012

Abstract: d2012 transistor 2SD2012 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2012 Audio Frequency Power , 2006-11-21 2SD2012 Electrical Characteristics (Tc = 25°C) Characteristics Symbol Test Condition , (Pb)-free package or lead (Pb)-free finish. 2 2006-11-21 2SD2012 IC ­ VCE 3.0 100 , ) 2006-11-21 2SD2012 rth ­ tw 100 (2) Infinite heat sink Tc = 25°C 30 Transient thermal , 100 125 150 175 Ambient temperature Ta (°C) 4 2006-11-21 2SD2012 RESTRICTIONS
Toshiba
Original
transistor d2012 d2012 transistor D2012 toshiba d2012 AMPLIFIER

transistor d2012

Abstract: d2012 transistor 2SD2012 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2012 Audio Frequency Power Amplifier Applications · High DC current gain: hFE (1) = 100 (min) · Low saturation voltage: VCE , )-free package or lead (Pb)-free finish. 1 2004-07-26 2SD2012 IC ­ VCE 3.0 100 80 , ) 2004-07-26 2SD2012 rth ­ tw 100 (2) Infinite heat sink Tc = 25°C 30 Transient thermal , 75 100 Ambient temperature 3 125 Ta 150 175 (°C) 2004-07-26 2SD2012
Toshiba
Original

2SD2012

Abstract: TOSHIBA 2SD2012 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SD2012 AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS Unit in mm â'¢ High DC Current Gain : hFE (1) = 100 (Min.) â'¢ Low , 1 MHz â'" 35 â'" pF 1 2001-11-05 TOSHIBA 2SD2012 IC - VCE hfe - ic 3.0 2.5 2.0 1.5 1.0 , 100 300 COLLECTOR-EMITTER VOLTAGE VQE (V) 2 2001-11-05 TOSHIBA 2SD2012 3 2001-11-05 TOSHIBA 2SD2012 RESTRICTIONS ON PRODUCT USE _000707E â'¢ TOSHIBA is continually working to improve the quality
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OCR Scan

D2012 toshiba

Abstract: transistor d2012 2SD2012 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2012 Audio Frequency Power , report and estimated failure rate, etc). 1 2006-11-21 2SD2012 Electrical Characteristics (Tc = , )-free finish. 2 2006-11-21 2SD2012 IC ­ VCE 3.0 90 100 80 70 60 1000 500 Tc = 100°C hFE , (V) 3 2006-11-21 2SD2012 rth ­ tw 100 50 (1) No heat sink Ta = 25°C (2) Infinite heat , Ta (°C) 4 2006-11-21 2SD2012 RESTRICTIONS ON PRODUCT USE · The information contained
Toshiba
Original

2sd2012 transistor

Abstract: 2sd2012 TOSHIBA Discrete Semiconductors 2SD2012 Transistor Unit in mm Silicon NPN Triple Diffused Type Audio Frequency Power Amplifier Features · High DC Current Gain : 100 (Min.) · Low Saturation Voltage - VCE (sat) = 1.0V (Max.) (IC = 2A, IB = 0.2A) · High Power Dissipation - PC = 25W (Tc = 25°C) · Collector Metal (Fin) is Covered with Mold Resin · Complementary to 2SB1375 Absolute , Capacitance TOSHIBA CORPORATION 1/2 2SD2012 The information contained here is subject to change
Toshiba
Original

2SD2012

Abstract: MCC Features · · · omponents 20736 Marilla Street Chatsworth !"# $ % !"# 2SD2012 High DC Current Gain: hFE(1) =100 (Min.) Low Saturation Voltage: VCE(sat) =1.0V (Max.) High Power Dissipation: PC=25W (TC=25OC) NPN Silicon Power Transistors Rating 60 60 7.0 3.0 0.5 2.0 25 -55 to +150 , 2.50 2.90 .102 2.60 .024 .035 0.60 0.90 NOTE www.mccsemi.com Revision: 2 2003/07/09 2SD2012 MCC www.mccsemi.com Revision: 2 2003/07/09 2SD2012 MCC www.mccsemi.com Revision: 2 2003
Micro Commercial Components
Original
Abstract: TO SHIBA TOSHIBA TRANSISTOR 2SD2012 AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS 2SD2012 SILICON NPN TRIPLE DIFFUSED TYPE Unit in mm 1 0 1 0.3 ^ 3.2 ± 0.2 2.710.2 · · · High DC Current Gain : hpE(l) = 100 (Min.) Low Saturation Voltage : v CE(sat) = 1-ov (Max.) High Power Dissipation : P , VOLTAGE Vqe (V) DC CURRENT GAIN hpE COLLECTOR CURRENT Ic (A) VCE(sat) - Ic 2SD2012 TO SHIBA 2SD2012 r th - tw 1997 02-03 3/3 - -
OCR Scan

transistor 2sd2012

Abstract: 2sd2012 TO SH IBA TOSHIBA TRANSISTOR 2SD2012 AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS 2SD2012 SILICON NPN TRIPLE DIFFUSED TYPE Unit in mm r · · · High DC Current Gain : hpE (1) - 100 (Min.) Low Saturation Voltage : v CE(sat) = I-0 v (Max.) High Power Dissipation : P c = 25 W (Tc = 25°C) RATING 60 60 7 3 0.5 2.0 25 150 -5 5 -1 5 0 10 ±0.3 0 o ^3.2 ± 0.2 CO 2.7±Q 2 cn ro 1.1 , 2SD2012 TO SH IBA 2SD2012 rth - tw 3 2 00 1 - 08-23 TO SH IBA 2SD2012
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OCR Scan

2sb1366

Abstract: 2SD2012 SavantIC Semiconductor Product Specification 2SD2012 Silicon NPN Power Transistors DESCRIPTION ·With TO-220F package ·Complement to type 2SB1366 ·Low collector saturation voltage ·Collector power dissipation: PC=25W(TC=25 ) APPLICATIONS ·Audio frequency power amplifier and general purpose , SavantIC Semiconductor Product Specification 2SD2012 Silicon NPN Power Transistors , .2 Outline dimensions 3 2SD2012 -
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Original

2sd2012

Abstract: 2SB1366 Inchange Semiconductor Product Specification 2SD2012 Silicon NPN Power Transistors DESCRIPTION ·With TO-220F package ·Complement to type 2SB1366 ·Low collector saturation voltage ·Collector power dissipation: PC=25W(TC=25) APPLICATIONS ·Audio frequency power amplifier and general purpose , ~150 Inchange Semiconductor Product Specification 2SD2012 Silicon NPN Power , Semiconductor Product Specification 2SD2012 Silicon NPN Power Transistors PACKAGE OUTLINE Fig
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Original
2SB136

transistor d2012

Abstract: d2012 transistor 2SD2012 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2012 Audio Frequency Power , report and estimated failure rate, etc). 1 2009-12-01 2SD2012 Electrical Characteristics (Ta , electronic equipment. 2 2009-12-01 2SD2012 IC ­ VCE 3.0 100 80 70 90 Collector , 2SD2012 rth ­ tw 100 Curves apply only to limited areas of thermal Transient thermal resistance , 4 tw 10 100 (s) 2009-12-01 2SD2012 RESTRICTIONS ON PRODUCT USE · Toshiba
Toshiba
Original
Abstract: MCC Micro Commercial Components TM omponents 20736 Marilla Street Chatsworth !"# $ % !"# 2SD2012 Features · · · · High DC Current Gain: hFE(1) =100 (Min.) Low Saturation Voltage: VCE(sat) =1.0V (Max.) High Power Dissipation: PC=25W (TC=25OC) Lead Free Finish/RoHS Compliant (Note1 , Revision: B 1 of 4 2011/06/01 2SD2012 MCC TM Micro Commercial Components www.mccsemi.com Revision: B 2 of 4 2011/06/01 2SD2012 MCC TM Micro Commercial Components www.mccsemi.com Micro Commercial Components
Original
Abstract: MCC Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# 2SD2012 Features · · · · High DC Current Gain: hFE(1) =100 (Min.) Low Saturation Voltage: VCE(sat) =1.0V (Max.) High Power Dissipation: PC=25W (TC=25OC) Lead Free Finish/RoHS Compliant (Note1) ("P" , 2011/01/01 2SD2012 MCC TM Micro Commercial Components www.mccsemi.com Revision: A 2 of 4 2011/01/01 2SD2012 MCC TM Micro Commercial Components www.mccsemi.com Revision Micro Commercial Components
Original

TOSHIBA MG150N2YS40

Abstract: mg75n2ys40 2SD2012 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2012 Audio Frequency Power , 2006-11-21 2SD2012 Electrical Characteristics (Tc = 25°C) Characteristics Symbol Test Condition , (Pb)-free package or lead (Pb)-free finish. 2 2006-11-21 2SD2012 IC ­ VCE 3.0 100 , ) 2006-11-21 2SD2012 rth ­ tw 100 (2) Infinite heat sink Tc = 25°C 30 Transient thermal , 100 125 150 175 Ambient temperature Ta (°C) 4 2006-11-21 2SD2012 RESTRICTIONS
Toshiba
Original
TOSHIBA MG150N2YS40 toshiba s2530a MG15G1AL2 mg75j2ys40 3SK35 MG30G1BL2 050106DAA1 YTF230

mg75n2ys40

Abstract: 2N3055 TOSHIBA 2SD2012 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2012 Audio Frequency Power , report and estimated failure rate, etc). 1 2009-12-01 2SD2012 Electrical Characteristics (Ta , electronic equipment. 2 2009-12-01 2SD2012 IC ­ VCE 3.0 100 80 70 90 Collector , 2SD2012 rth ­ tw 100 Curves apply only to limited areas of thermal Transient thermal resistance , 4 tw 10 100 (s) 2009-12-01 2SD2012 RESTRICTIONS ON PRODUCT USE · Toshiba
Toshiba
Original
2N3055 TOSHIBA TLR103 TOSHIBA 2N3055 S2530A MG15G1AL3 iss193 S2540 TIP29B S2543 TIP29C YTF231 S2582
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