| Abstract: 2SD2012 NPN 2SD2012 : mm · · : PC = 25 W (Tc = 25°C) : VCE (sat) = , : (//) 2-10R1A 2-10R1A (/ ) : 1.7 g () ( ) () 1 2009-12-01 2SD2012 (Ta = 25°C , ]] RoHS RoHS (RoHS) 2003 1 27 (EU 2002/95/EC 2002/95/EC) 2 2009-12-01 2SD2012 IC VCE hFE , VCE (V) 2009-12-01 2SD2012 rth tw 100 rth (°C/W) 50 30 (1) (2 , ) 2009-12-01 2SD2012 · · · · "" · · · ... |
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2SD2012 D2012 br d2012 2SD2012 abstract |
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| Abstract: 2SD2012 NPN 2SD2012 : mm · · : PC = 25 W (Tc = 25°C) : VCE (sat) = , : (//) 2-10R1A 2-10R1A (/ ) : 1.7 g () ( ) () 1 2009-12-01 2SD2012 (Ta = 25°C , ]] RoHS RoHS (RoHS) 2003 1 27 (EU 2002/95/EC 2002/95/EC) 2 2009-12-01 2SD2012 IC VCE hFE , VCE (V) 2009-12-01 2SD2012 rth tw 100 rth (°C/W) 50 30 (1) (2 , ) 2009-12-01 2SD2012 · · · · "" · · · ... |
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| Abstract: 2SD2012 NPN 2SD2012 : mm · · : PC = 25 W (Tc = 25°C) · : VCE , : 2-10R1A 2-10R1A (//) (/ : 1.7 g () ) () () 1 2007-06-07 2SD2012 (Ta = 25°C , D2012 D2012 () No. (: : ) 2 2007-06-07 2SD2012 IC VCE hFE IC 1000 3.0 , 2SD2012 rth (°C/W) rth tw 100 (1) (2) 50 30 (1) 10 5 3 (2) 1 0.5 0.3 0.1 10-3 10-2 10-1 1 10 102 tw (s) 4 2007-06-07 2SD2012 ... |
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| Abstract: 2SD2012 ® NPN SILICON POWER TRANSISTOR s s s HIGH DC CURRENT GAIN LOW SATURATION , PURPOSE SWITCHING s DESCRIPTION The 2SD2012 is a silicon NPN power transistor housed in TO-220F , C C 1/5 2SD2012 THERMAL DATA R thj-case Thermal Resistance Junction-case Max o , 2SD2012 DC Current Gain Collector Emitter Saturation Voltage Base Emitter On Voltage 3/5 2SD2012 TO-220F MECHANICAL DATA mm DIM. MIN. TYP. inch MAX. MIN. TYP. MAX. A ... |
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2sd2012 transistor 2SD2012 2SD2012 abstract |
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| Abstract: SavantIC Semiconductor Product Specification 2SD2012 Silicon NPN Power Transistors DESCRIPTION ·With TO-220F package ·Complement to type 2SB1366 2SB1366 ·Low collector saturation voltage ·Collector power dissipation: PC=25W(TC=25 ) APPLICATIONS ·Audio frequency power amplifier and general purpose , -55~150 SavantIC Semiconductor Product Specification 2SD2012 Silicon NPN Power , Outline dimensions 3 2SD2012 ... |
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2SD2012 2sb1366 2SD2012 abstract |
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| Abstract: Inchange Semiconductor Product Specification 2SD2012 Silicon NPN Power Transistors DESCRIPTION ·With TO-220F package ·Complement to type 2SB1366 2SB1366 ·Low collector saturation voltage ·Collector power dissipation: PC=25W(TC=25) APPLICATIONS ·Audio frequency power amplifier and general purpose , -55~150 Inchange Semiconductor Product Specification 2SD2012 Silicon NPN Power , Inchange Semiconductor Product Specification 2SD2012 Silicon NPN Power Transistors PACKAGE ... |
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2SB1366 2sd2012 2SD2012 2SD2012 abstract |
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| Abstract: TOSHIBA 2SD2012 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SD2012 AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS Unit in mm • High DC Current Gain : hFE(1) = 100 (Min.) • Low Saturation Voltage : VcEisat^i-OV (Max.) • High Power Dissipation : Pç; = 25W (Tc = 25°C) MAXIMUM RATINGS (Ta = , subject to change without notice. 1997-02-03 1/3 TOSHIBA 2SD2012 IC - VCE hFE - IC 3.0 2.5 2.0 , 5 10 30 50 100 300 COLLECTOR-EMITTER VOLTAGE VQE (V) 1997-02-03 2/3 TOSHIBA 2SD2012 1997-02-03 ... |
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2sd2012 transistor 2SD2012 2SD2012 abstract |
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| Abstract: 2SD2012 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2012 Audio Frequency Power , 2SD2012 Electrical Characteristics (Tc = 25°C) Characteristics Symbol Test Condition Min , (Pb)-free package or lead (Pb)-free finish. 2 2006-11-21 2SD2012 IC VCE 3.0 100 , VBE (V) 2006-11-21 2SD2012 rth tw 100 (2) Infinite heat sink Tc = 25°C 30 , 2SD2012 RESTRICTIONS ON PRODUCT USE 20070701-EN 20070701-EN · The information contained herein is subject to ... |
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D2012 br d2012 2SD2012 D2012 toshiba d2012 AMPLIFIER transistor d2012 d2012 transistor 2SD2012 abstract |
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| Abstract: 2SC2349 2SC2349 2SC489 2SC489 2SD526 2SD526, 2SD880 2SD880, 2SD1408 2SD1408, 2SD2012 2SC370 2SC370 (G) 2SC1815 2SC1815 2SC386 2SC386 2SC2349 2SC2349 2SC490 2SC490 2SD526 2SD526, 2SD880 2SD880, 2SD1408 2SD1408, 2SD2012 2SC370K 2SC370K 2SC1815 2SC1815 2SC386A 2SC386A 2SC2349 2SC2349 2SC491 2SC491 2SD526 2SD526, 2SD880 2SD880, 2SD1408 2SD1408, 2SD2012 2SC371 2SC371 2SC1815 2SC1815 2SC387 2SC387 2SC2347 2SC2347 2SC492 2SC492 2SD526 2SD526, 2SD880 2SD880, 2SD1408 2SD1408, 2SD2012 2SC371 2SC371 (G) 2SC1815 2SC1815 2SC387A 2SC387A 2SC2347 2SC2347 2SC493 2SC493 2SD526 2SD526, 2SD880 2SD880, 2SD1408 2SD1408, 2SD2012 2SC372 2SC372 (G) 2SC1815 2SC1815 2SC387A 2SC387A (G) 2SC2347 2SC2347 2SC494 2SC494 2SD526 2SD526, 2SD880 2SD880, 2SD1408 2SD1408, 2SD2012 ... |
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1S1658 MG25N2YS1 2SC102 transistor MG200N1US1 MG8N6ES1 mg100q2ys9 MG15G1AL1 MG15N6ES40 3SK35 MG15G1AL3 S2530A MG8N6ES42 MG30G1BL2 MG15G1AL2 02CZ2 02CZ5 02CZ2 abstract |
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| Abstract: TOSHIBA 2SD2012 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SD2012 AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS Unit in mm • High DC Current Gain : hFE (1) = 100 (Min.) • Low , 2SD2012 IC - VCE hfe - ic 3.0 2.5 2.0 1.5 1.0 0.5 0' _ IC c 0- -k 80 o- £ 70 , 300 COLLECTOR-EMITTER VOLTAGE VQE (V) 2 2001-11-05 TOSHIBA 2SD2012 3 2001-11-05 TOSHIBA 2SD2012 RESTRICTIONS ON PRODUCT USE _000707E 000707E • TOSHIBA is continually working to improve the quality ... |
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2SD2012 2SD2012 abstract |
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