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2sc1061 Datasheet

Part Manufacturer Description PDF Type
2SC1061 Various Russian Datasheets Transistor Original
2SC1061 Wing Shing Computer Components NPN EPITAXIAL SILICON TRANSISTOR(LOW FREQUENCY POWER AMPLIFIER) Original
2SC1061 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan
2SC1061 Micro Electronics Semiconductor Device Data Book Scan
2SC1061 Mospec POWER TRANSISTORS(3.0A,50V,25W) Scan
2SC1061 Mospec NPN Silicon Power Transistor Scan
2SC1061 Mospec LOW FREQUENCY POWER AMPLIFIER Complementary pair with 2SA670 and 2SA671 Scan
2SC1061 Motorola Motorola Semiconductor Data & Cross Reference Book Scan
2SC1061 N/A Semiconductor Master Cross Reference Guide Scan
2SC1061 N/A Transistor Substitution Data Book 1993 Scan
2SC1061 N/A The Japanese Transistor Manual 1981 Scan
2SC1061 N/A Scan
2SC1061 N/A Shortform Transistor Datasheet Guide Scan
2SC1061 N/A Basic Transistor and Cross Reference Specification Scan
2SC1061 N/A Transistor Shortform Datasheet & Cross References Scan
2SC1061 N/A Basic Transistor and Cross Reference Specification Scan
2SC1061 N/A Shortform Transistor PDF Datasheet Scan
2SC1061 N/A Transistor Replacements Scan
2SC1061 N/A Japanese Transistor Cross References (2S) Scan
2SC1061 N/A Cross Reference Datasheet Scan
Showing first 20 results.

2sc1061

Catalog Datasheet MFG & Type PDF Document Tags

2SC1061

Abstract: 2SC1060 Inchange Semiconductor Product Specification 2SC1061 Silicon NPN Power Transistors DESCRIPTION With TO-220 package Low saturation voltage Complement to type 2SA671 Note: type 2SC1060 with , Product Specification 2SC1061 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise , Specification 2SC1061 Silicon NPN Power Transistors PACKAGE OUTLINE OND IC TOR UC , Semiconductor Product Specification 2SC1061 Silicon NPN Power Transistors 4 -
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Original
2Sc1060 equivalent 2SC1061 B 2sc1061 equivalent 2sc1061 datasheet

2SC1061

Abstract: 2sc1060 SavantIC Semiconductor Product Specification 2SC1061 Silicon NPN Power Transistors DESCRIPTION ·With TO-220 package ·Low saturation voltage ·Complement to type 2SA671 ·Note: type 2SC1060 with short pin APPLICATIONS ·For use in low frequency power amplifier applications PINNING PIN , from junction to case SavantIC Semiconductor Product Specification 2SC1061 Silicon NPN , ) 3 2SC1061 SavantIC Semiconductor Product Specification 2SC1061 Silicon NPN Power
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Original
2SC1061 C 2SC1061-C

2SC1061

Abstract: 2SC1060 Product Specification www.jmnic.com 2SC1061 Silicon NPN Power Transistors DESCRIPTION With TO-220 package Low saturation voltage Complement to type 2SA671 Note: type 2SC1060 with short , junction to case Product Specification www.jmnic.com 2SC1061 Silicon NPN Power Transistors , TYP. MAX UNIT 320 MHz Product Specification www.jmnic.com 2SC1061 Silicon NPN , Product Specification www.jmnic.com 2SC1061 Silicon NPN Power Transistors 4 JMnic
JMnic
Original

2SC1061

Abstract: transistor 2SC1061 2SC1061 Unit Collector-Emitter Voltage VCEO 50 V Collector-Base Voltage vCBO 50 V Emitter-Base Voltage , Junction to Case R6jc 5.0 °C/W FIGURE -1 POWER DERATING 301-â'"- Tc, TEMPERATURE^ C) NPN 2SC1061 , 4.22 4.98 J 1.14 1.38 K 2.20 2.97 L 0.33 0.55 M 2.48 2.98 O 3.70 3.90 2SC1061 NPN ELECTRICAL , ) Classification :_ 35 A 70 60 B 120 100 C 200 160 D 320 2SC1061 NPN le - Vce 2 0 4.0 6.0 8.0 10 Vce
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OCR Scan
transistor 2SC1061 2sC1061 transistor 2sc1061 npn transistor 2SC1061 f 2SC1061 PNP L50C

2sc1060

Abstract: 2SC1061 V y =J > NPN HSîÃtSB 2SA670, 2SA671 £ 3 > * > $ V SILICON NPN TRIPLE DIFFUSED_ LOW FREQUENCY POWER AMPLIFIER Complementary pair with 2SA670 and 2SA671 2SC1060 2SC1061 -11.27 ^3.0max. 1. ^ - * .'Base 2. : Collector (7 7 > £/) (Flange) 3. x J -y ^ : Emitter (Dimensions in mm) 03.6+0 , =25°C ) m i Symbol 2SC1060, 2SC1061 Unit u U 9 ? - - x H S Vcfio 50 V V 7 ? * i ì â'¢/ 9 1 J Vc , -0. 5A - 8 - MHz ♦ 2SC1060, 2SC1061 (i J: 0 Tffcrt J: v fc 4 irjbOgt* * The 2SC1060 and 2SCI061 are
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OCR Scan
JE1A to220aa TO-220-AA TO-220AA T0-220AB TC-25X VCB-20V

2SC1061

Abstract: 2SA671 2SA671 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER TO-220 ! Complement to 2SC1061 ABSOLUTE MAXIMUM RATINGS (TA=25) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base voltage Collector Current (DC) Collector Dissipation (Tc=25) Junction Temperature Storage Temperature Symbol Rating Unit VCBO VCEO VEBO IC PC Tj Tstg -50 -50 -5 -3 25 150 -50~150 V V V A W ELECTRICAL CHARACTERISTICS (TA=25) Characteristic
Wing Shing Computer Components
Original
2sA671 transistor

2SC1061

Abstract: transistor 2SC1061 2SC1061 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER TO-220 ! Complement to 2SA671 ABSOLUTE MAXIMUM RATINGS (TA=25) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base voltage Collector Current (DC) Collector Dissipation (Tc=25) Junction Temperature Storage Temperature Symbol Rating Unit VCBO VCEO VEBO IC PC Tj Tstg 50 50 7 3 25 150 -50~150 V V V A W ELECTRICAL CHARACTERISTICS (TA=25) Characteristic
Wing Shing Computer Components
Original
2sc1061 npn transistor datasheet

2sa671

Abstract: 2SA670 SavantIC Semiconductor Product Specification 2SA671 Silicon PNP Power Transistors DESCRIPTION ·With TO-220 package ·Complement to type 2SC1061 ·Low collector saturation voltage Note:type 2SA670 with short pin APPLICATIONS ·Designed for use in low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER
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Original
2sa671 equivalent

2SC1061

Abstract: 2SA671 isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA671 DESCRIPTION ·Low Collector Saturation Voltage: VCE(SUS)= -1.0V(Max)@ IC= -2.0A ·DC Current Gain : hFE= 35-320@ IC= -0.5A ·Complement to Type 2SC1061 APPLICATIONS ·Designed for use in low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base
INCHANGE Semiconductor
Original

2SA670

Abstract: 2SA671 Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA671 DESCRIPTION â'¢ With T0220 package â'¢ Complement to type 2SC1061 â'¢ Low collector saturation voltage Note:type 2SA670 with short pin APPLICATIONS â'¢ Designed for use in low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter Co I lector: connected to mounting base 3 Base Absolute maximum ratings(Ta=25iC) SYMBOL PARAMETER CONDITIONS VALUE UNIT VcBO Collector-base voltage Open emitter -50 V VcEO
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OCR Scan
Abstract: J.S.11S.U z)ni-C,onaiLct:oi , One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 2SA671 Silicon PNP Power Transistor DESCRIPTION â'¢ Low Collector Saturation Voltage: VCE(SUS)= -1.0V(Max)@ lc= -2.0A â'¢ DC Current Gain : hFE= 35-320® lc= -0.5A â'¢ Complement to Type 2SC1061 PIN 1.BASE J. COLLECTOR TO-220C package APPLICATIONS â'¢ Designed for use in low frequency power amplifier applications. -* 3 -< ii/ H ,- M New Jersey Semiconductor
Original

2SC1061 f

Abstract: , One. J. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 2SA671 Silicon PNP Power Transistor DESCRIPTION â'¢ Low Collector Saturation Voltage: VCE(susr -1.0V(Max)@ lc= -2.0A â'¢ DC Current Gain : hFE= 35-320® lc= -0.5A â'¢ Complement to Type 2SC1061 PIN 1.BASE 1. COLLECTOR 3. EMITTER TO-220C package APPLICATIONS â'¢ Designed for use in low frequency power amplifier applications. B r H 4 V ^
New Jersey Semiconductor
Original

60B120

Abstract: 2SA671 ¿Z&MOSPEC PNP SILICON POWER TRANSISTORS .designed for use in iow frequency power amplifier applications FEATURES: * Low Collector-Emitter Saturation Voltage VCE(satf 10V(Max> @iC=2 0A,lB=0.2A * DC Current Gain hFE= 35-320@lc= 0.5A * Complememtary to NPN 2SC1061 MAXIMUM RATINGS Characteristic Symbol 2SA671 Unit Collector-Emitter Voltage vCEO 50 V Collector-Base Voltage VCBO 50 V Emitter-Base Voltage VEBO 4.0 V Collector Current - Continuous - Peak â'¢c 'cm 3.0 6.0 A Base current
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OCR Scan
60B120

2SC1061

Abstract: 2SA671 isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA671 DESCRIPTION ·Low Collector Saturation Voltage: VCE(SUS)= -1.0V(Max)@ IC= -2.0A ·DC Current Gain : hFE= 35-320@ IC= -0.5A ·Complement to Type 2SC1061 APPLICATIONS ·Designed for use in low frequency power amplifier applications. .cn mi e ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VCBO Collector-Emitter Voltage VEBO Emitter-Base Voltage UNIT -50 V scs .i w Collector-Base
INCHANGE Semiconductor
Original

2SA671

Abstract: 2SC1061 JMnic Product Specification 2SA671 Silicon PNP Power Transistors DESCRIPTION With TO-220 package Complement to type 2SC1061 Low collector saturation voltage Note:type 2SA670 with short pin APPLICATIONS Designed for use in low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT
JMnic
Original

2sb526

Abstract: 2SB529 10 2 3 2SA670 2SC1061 N TO-220 25 3 50 35 320 # 0.1 4 1 2 3 2SA671 2SC1173 N TO-220 10 3 50 40 400
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OCR Scan
2SB513A 2SD366A 2SB514 2SD330 2SB515 2SD331 2sb526 2SB529 2SC789 2SA816 2SD359

2SC789

Abstract: 2sc1060 Power Transistors type no. polarity case maximum ratings min hfe vce(sat) ft min (MHz) complementary type pd IW) 'c (a) V ceo (V) max 'c (a) vce (V) max (V) â c (a) 2SC789 N TO-220 30 4 60 40 240 # 0.5 5 1.5 3 3 2SA489 2SC790 N TO-220 25 3 40 40 240 # 0.5 2 1.4 2 3 2SA490 2SC1060 N TO-220 25 3 50 35 320 # 0.1 4 10 2 3 2SA670 2SC1061 N TO-220 25 3 50 35 320 # 0.1 4 1 2 3 2SA671 2SC1173 N TO-220 10 3 50 40 400 # 0.5 2 0.8 2 10C 2SA473 2SC1626 N TO-220 10 0.75 80 70 240 #
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OCR Scan
TO-220 2sd360 250314 TO220 2SD234 2SB434 2SD235 2SB435 2SD288 2SD289

2sb526

Abstract: 2sc1060 Power Transistors TYPE NO. POLA RITY CASE MAXIMUM RATINGS Pd (mW) IC (A) VCEO (V) min max H FE IC (mA) VCE (V) VCE(sat) max (V) IC (A) fT min (MHz) COMPLE MENTARY TYPE 2SB513A 2SB514 2SB515 2SB523 2SB526 2SB529 2SB566A K 2SC789 2SC790 2SC1060 2SC1061 2SC1173 2SC1626 2SD234 2SD235 2SD288 2SD289 2SD313 2SD314 2SD 330 2SD331 2SD 356 2SD 359 2SD 360 2SD365 2SD 365A 2SD 366 2SD 366A 2SD 389 2SD 389A 2SD476A K 2SD 526 2SD 570 P P P P P P P N N N N N N N N N N N N N N N N N N N N N N N N N N TO -220 TO
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OCR Scan
2SB566AK 2SD476AK 2SB513

2n6125

Abstract: 0.5 100+ 3 3 3 50 2SC1173 2SC790 2SC1060 2SC1061 2SC1626 2SB434 2SB435 2SB512
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OCR Scan
2n6125 MH8100 MH8106 MH8108 MH8700 MH0810 MH0816

2sd331

Abstract: 2sc1061 Power Transistors TYPE POLA CASE NO. RITY 2SB513 2SB513A 2SB514 2SB515 2SB523 2SB526 2SB529 2SB566AK 2SC789 2SC790 2SC1060 2SC1061 2SC1173 2SC1626 2SD234 2SD235 2SD288 2SD289 2SD313 2SD314 2SD330 2SD331 2SD356 2SD359 2SD360 2SD365 2SD365A 2SD366 2SD366A 2SD389 2SD389A 2SD476AK 2SD526 2SD570 P P P P P P P P N N N N N N N N N N N N N N N N N N N N N N N N N N TO-220 TO-220 TO-220 TO-220 TO-220 TO-220 TO-220 TO-220 TO-220 TO-220 TO-220 TO-220 TO-220 TO-220 TO-220 TO-220 TO-220 TO-220 TO-220 TO-220 TO
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OCR Scan
2SB507 2SB508 2SB512A 2SB596 2SB604

2SD424

Abstract: 2SD424 TOSHIBA SavantIC Semiconductor Product Specification 2SA671 Silicon PNP Power Transistors DESCRIPTION ·With TO-220 package ·Complement to type 2SC1061 ·Low collector saturation voltage Note:type 2SA670 with short pin APPLICATIONS ·Designed for use in low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER
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OCR Scan
2SD2023 2SC387A 2SC2926 2SC2762 2SD424 2SC2285A-KA 2SD424 TOSHIBA 2SC2993 TL 1084 2sc1162 2SC3140 2SC3141 2SC1755 2SC515A 2SC2085 2SC2516
Showing first 20 results.