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Part : 2SB834-O Supplier : Toshiba Manufacturer : Chip1Stop Stock : 71 Best Price : $6.90 Price Each : $6.90
Part : 2SB834-O Supplier : Toshiba Manufacturer : Chip1Stop Stock : 71 Best Price : $6.90 Price Each : $6.90
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2sb834 Datasheet

Part Manufacturer Description PDF Type
2SB834 Transys Electronics Plastic-Encapsulated Transistors Original
2SB834 Various Russian Datasheets Transistor Original
2SB834 Wing Shing Computer Components PNP EPITAXIAL SILICON TRANSISTOR(LOW FREQUENCY POWER AMPLIFIER) Original
2SB834 Mospec POWER TRANSISTORS(3.0A,60V,30W) Scan
2SB834 Mospec PNP Silicon Power Transistor Scan
2SB834 N/A Transistor Shortform Datasheet & Cross References Scan
2SB834 N/A Shortform Transistor PDF Datasheet Scan
2SB834 N/A Japanese Transistor Cross References (2S) Scan
2SB834 N/A Cross Reference Datasheet Scan
2SB834 N/A Catalog Scans - Shortform Datasheet Scan
2SB834 N/A Catalog Scans - Shortform Datasheet Scan
2SB834 N/A Catalog Scans - Shortform Datasheet Scan
2SB834 N/A Catalog Scans - Shortform Datasheet Scan
2SB834 N/A Semiconductor Master Cross Reference Guide Scan
2SB834 N/A The Transistor Manual (Japanese) 1993 Scan
2SB834 N/A Transistor Substitution Data Book 1993 Scan
2SB834 N/A The Japanese Transistor Manual 1981 Scan
2SB834 N/A Scan
2SB834 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
2SB834 N/A Shortform Data and Cross References (Misc Datasheets) Scan
Showing first 20 results.

2sb834

Catalog Datasheet MFG & Type PDF Document Tags

b1375

Abstract: 2sk270a p la c e m e n t T y p e N o. 2SA1358 2SA1358 2SA1358 2SB834, B1375 2SB596 2SB834, B1375 2SB596 , y p e N o. 2SA970 2SB834, B1375 _ _ 2SB834, B1375 2SA429G-TM - 2SA950 2SA950 2SB595, B1016 2SA1358 2SB596 2SB1015 2SA1321 2SA1321 _ 2SA1302 2SA1049 2SA562TM 2SA1301 2SA1048 2SB834, B1375 2SB834, B1375 2SB834, B1375 2SA1015 2SA562TM 2SA1015 2SA1015 2SA1015 2SA1015 - 2SA1015 2SA1015 2SB834, B1375 2SB834, B1375 2SB686 2SB686 - 2SA1356 2SA1356 2SA950 2SA1356 2SD718 2SD797 2SD797 2SD797 - 2SB686
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OCR Scan
MG15G1AL2 S-AU15 2sk270a 2SK150A 2SA1051b MG50G2CL1 mg100g1al2 2N3713 2N3714 2N3715 2N3716 2N3789 2N3790

2SB834

Abstract: UNISO TE NIC CHNO G SCO LTD LO IE ., 2SB834 PNP SILICON TRANSISTOR H I GH V OLT AGE T RAN SI ST OR Ì DESCRI PT I ON Low frequency power amplifier applications. Lead-Free: 2SB834L Halogen Free: 2SB834G Ì ORDERI N G I N FORM AT I ON Normal 2SB834-x-T60-K 2SB834-x-TA3-T 2SB834-x-TF3-T Ordering Number Lead Free 2SB834L-x-T60-K 2SB834L-x-TA3-T 2SB834L-x-TF3-T Halogen Free 2SB834G-x-T60-K 2SB834G-x-TA3-T 2SB834G-x-TF3-T www.unisonic.com.tw Copyright © 2009 Unisonic Technologies Co., Ltd
Unisonic Technologies
Original
2SB834- 2SB834L- 2SB834G- QW-R204-018

2SB834

Abstract: 2SD880 JMnic Product Specification 2SB834 Silicon PNP Power Transistors DESCRIPTION With TO-220 package Low collector saturation voltage Complement to type 2SD880 APPLICATIONS Audio frequency power , Specification 2SB834 Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified , Product Specification 2SB834 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.10 mm) 3 JMnic Product Specification 2SB834 Silicon PNP
JMnic
Original

2SB834

Abstract: 2SD880 SavantIC Semiconductor Product Specification 2SB834 Silicon PNP Power Transistors DESCRIPTION ·With TO-220 package ·Low collector saturation voltage ·Complement to type 2SD880 APPLICATIONS , temperature -55~150 SavantIC Semiconductor Product Specification 2SB834 Silicon PNP Power , Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.10 mm) 3 2SB834 SavantIC Semiconductor Product Specification 2SB834 Silicon PNP Power Transistors 4 -
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Original

2SB834L

Abstract: utc 2sb834L UNISONIC TECHNOLOGIES CO., LTD 2SB834 PNP SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR DESCRIPTION Low frequency power amplifier applications. Lead-Free: 2SB834L Halogen Free: 2SB834G ORDERING INFORMATION Normal 2SB834-x-T60-K 2SB834-x-TA3-T 2SB834-x-TF3-T Ordering Number Lead Free 2SB834L-x-T60-K 2SB834L-x-TA3-T 2SB834L-x-TF3-T Halogen Free 2SB834G-x-T60-K 2SB834G-x-TA3-T 2SB834G-x-TF3-T www.unisonic.com.tw Copyright © 2009 Unisonic Technologies Co., Ltd Package TO
Unisonic Technologies
Original
utc 2sb834L 2SB83 2sb834 transistor

761b nec

Abstract: 2SB1010 2SB834 2SB703 2SB857 2SB941 2SB1369 2SB 761A fé t 2SB834 2SB703 2SB859 2SB941A 2SA1634 2SB 761B fé t 2SB834 2SB703A 2.SB859 2SB941A
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OCR Scan
2SB927 2SB1010 2SA684 2SA966 2SA817 2SB1043 761b nec 2sb1041 761a 2sa684 nec 2SB737 2SB739 2SA1705 2SB740

mg75n2ys40

Abstract: MG15N6ES42 2SA1015 2SA486 2SA1358 2SA52 2SA1015 2SA305 2SA1015 2SA489 2SB834, 2SB1375, 2SB596 2SA53 2SA1015 2SA311 2SA1015 2SA490 2SB834, 2SB1375, 2SB596 2SA57 , 2SA1801 2SA679 2SA1265N 2SA1120 2SA1357 2SB25 2SB834, 2SB1375 2SA680 2SA1265N 2SA1120 (NP) 2SA1357 2SB26 2SB834, 2SB1375 2SA681 2SA1144 2SA1360 2SB26A 2SB834, 2SB1375 2SA682 2SA1358 2SA1146 2SA1265N 2SB40 2SA1015 2SA739
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Original
1S1658 mg75n2ys40 MG15N6ES42 MG150n2ys40 MG8N6ES42 mg75j2ys40 MG30G1BL2 02BZ2 1S2092 1SZ5759 02CZ2 1S2094 2N3055

2SB834L

Abstract: 2SB834 UNISONIC TECHNOLOGIES CO., LTD 2SB834 PNP SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR DESCRIPTION Low frequency power amplifier applications. *Pb-free plating product number: 2SB834L ORDERING INFORMATION Ordering Number Normal Lead Free Plating 2SB834-x-T60-K 2SB834L-x-T60-K 2SB834-x-TA3-T 2SB834L-x-TA3-T www.unisonic.com.tw Copyright © 2007 Unisonic Technologies Co., Ltd Package TO , -018.C 2SB834 PNP SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS (Operating temperature range applies unless
Unisonic Technologies
Original

2SB834

Abstract: 2sb834 transistor 2SB834 PNP Silicon Epitaxial Power Transistor P b Lead(Pb)-Free Features: * DC Current Gain hFE = 60-200 @IC = 0.5A * Low VCE(sat) 1.0V(MAX) @IC = 3.0A, IB = 0.3A * Complememtary to NPN 2SD880 ABSOLUTE MAXIMUM RATINGS (TA=25ºC) Rating COLLECTOR 2 1 BASE 1 2 3 1. BASE , - -100 µA WEITRON http://www.weitron.com.tw 1/3 02-Feb-07 2SB834 ELECTRICAL , Range 60-120 100-200 WEITRON http://www.weitron.com.tw 2/3 02-Feb-07 2SB834 TO
Weitron
Original
Abstract: 2SB834 -3A , -60V PNP Plastic-Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of â'-Câ' specifies halogen & lead-free FEATURES ITO-220J Power switching applications B N D E CLASSIFICATION OF hFE Product-Rank 2SB834-O 2SB834-Y Range 60~120 100~200 M H J C L Collector A K L G F 2 REF. 1 A B C D E F G Base 3 Emitter Millimeter Min. Max. 14.80 15.60 9.50 10.50 SeCoS
Original

2sb834

Abstract: 2sb834 transistor TO SH IBA TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE (PCT PROCESS) 2SB834 AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS. 2SB834 Unit in mm · · · Low Collector Saturation Voltage : v CE(sat)= -1.0V (Max.) at IC= -3 A , IB = -0.3A Collector Power Dissipation : P q = 30W (Tc = 25°C) Complementary to 2SD880. RATING MAXIMUM RATINGS (Ta = 25°C) SYMBOL CHARACTERISTIC Collector-Base Voltage , NJ 1 2SB834 TO SH IBA 2SB834 RESTRICTIONS ON PRODUCT USE 000707EAA TOSHIBA is
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OCR Scan
2SB834 TOSHIBA

2SA985 NEC

Abstract: 2s8834 434 , X s 2SB507 ZSB834 2SA985 2SB566 00 2SB1369 2SB 435 - s 2 2SB507 2SB834 2SA985 ZSB566(K , îl 2SB561 2SB 502 ^ 3E "s. 2SB508 2SB834 2SB566AO!) 2SB 503 â'¢ 2SB508 2SB834 2SB566(K) 2SB1369 2SB 503A m 2SB508 2SB834 2SB941A 2SB 504 0 m 2SB508 2SB1369 2SB 504A 0
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OCR Scan
2SB56 2SA836 2SB1314 2SB537 2SA985 NEC 2s8834 toshiba 2sb555 2SB562 2SC2270 2SB775 2SB856

2SB834

Abstract: 2sb834 equivalent Inchange Semiconductor Product Specification 2SB834 Silicon PNP Power Transistors DESCRIPTION With TO-220 package Low collector saturation voltage Complement to type 2SD880 APPLICATIONS , Product Specification 2SB834 Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise , 2SB834 Silicon PNP Power Transistors PACKAGE OUTLINE TOR UC OND IC SEM GE , Product Specification 2SB834 Silicon PNP Power Transistors OND IC TOR UC SEM
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Original
2sb834 equivalent 2sd880 equivalent

2SB834

Abstract: 2S8834 Symbol 2SB834 Unit Collector-Emitter Voltage VCEO 60 V Collector-Base Voltage VCBO 60 V Emitter-Base , ,TEMPERATURE(»C) PNP 2SB834 3.0 AMPERE POWER TRANASISTORS 60 VOLTS 30 WATTS TO-220 I m * 2 3 e T , 0.72 0.96 I 4.22 4.98 J 1.14 1.38 K 2.20 2.97 L 0.33 0.55 M 2.48 2.98 O 3.70 3.90 2SB834 PNP , ) Classification :_ 60 O 120 100 Y 200 2SB834 PNP le - Vce 1.0 2.0 3.0 4.0 5.0 Vce , COLLECTOR-EMITTER
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OCR Scan
transistor 2s8834

UTC2SB834

Abstract: UTC 2SB834 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR DESCRIPTION Low frequency power amplifier applications. 1 TO-126 1: EMITTER 2: COLLECTOR 3: BASE ABSOLUTE , -018,B UTC 2SB834 PNP EPITAXIAL SILICON TRANSISTOR TYPICAL CHARACTERISTICS Ic-Vce POWER , UNISONIC TECHNOLOGIES CO. LTD 2 QW-R204-018,B UTC 2SB834 PNP EPITAXIAL SILICON TRANSISTOR UTC UNISONIC TECHNOLOGIES CO. LTD 3 QW-R204-018,B UTC 2SB834 PNP EPITAXIAL SILICON TRANSISTOR UTC
Unisonic Technologies
Original
UTC2SB834

2SK 150A

Abstract: mg100g1al2 2SA950 2SB595, B1016 2SA1358 2SB 596 2SB 1015 2SA970 2SB834, B1375 - 2SA950 2SA817 2SA1015 2SA1015 2SB834, B1375 2SB596, B1375 2SB834, B1375 2SB596, B1375 2SB834 2SB834 2SA970 2SA970 2SA950 2SB834 2SB834 2SB595, B1375 2SB596, B1375 2SA1015 2SA970 2SB834 2SB834 2SB686 2SB686 2SA1357 2SB863, A 1265N 2SB863, A 1265N 2SB688 2SB688 2SB 863 2S A 1 3 0 2 2SA1321 2SA1321 2SB834, B1375 2S A 429G -T M 2SA1356 , 435/G 2SB439 2SB440 2SB461 2SB462 2SB463 2SB464 2SA1302 2SA1049 2SA 562T M 2SA1301 2SA1048 2SB834
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OCR Scan
2SA28 2SK 150A 2SC2461 B 2SD1365 2sk30 C366G 2SC102 2N3791 2N3792 2N4340 2N4340S 2N4391 2N4392

C3182N

Abstract: C3888A 2SA 1358 2SA 1358 2SB834, 2SB I375 2SB596 2S B 8 Î4 , 2SB1375 2SB596_ 1256 T y p e Na , 2SB20I 2SB202 R eco m m en d R eplacem ent T y p e Na 2SB834 2S B I375 2SB834 2S B I375 2 S A I0 1 5 2 S A 562T M 2 S A I0 1 5 2 S A I0 I5 2 S A IO I5 2 S A 1015 - 2 S A 1015 2SA 1015 2SB834 2S B I375 2SB834 2 S B I3 7 5 2SB686 2SB686 T y p e Na 2SB235 2SB236 2SB237 2SB257 2SB258 2SB259 2SB 260 2SB265 , 950 2SA 817 2 S A 1 0 I5 2 S A IO I5 2SB834 2SB1375 2SB596 2SB1375 2SB834 2S B I375 2SB596 2 S B I375
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OCR Scan
C3182N C3888A 2sd 3420 2SC2268 3884A EP 1408 2SA51 2SA501 2SD941 2SD2241 2SC3281 2SD1571
Abstract: UTC 2SB834 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR DESCRIPTION Low frequency power amplifier applications. 1 TO-126 1: EMITTER 2: COLLECTOR 3: BASE ABSOLUTE MAXIMUM RATINGS ( Operating temperature range applies unless otherwise specified ) PARAMETER SYMBOL , 60-120 Y 100-200 GR 150-300 UNISONIC TECHNOLOGIES CO. LTD 1 QW-R205-018,A UTC 2SB834 , 2SB834 PNP EPITAXIAL SILICON TRANSISTOR UTC assumes no responsibility for equipment failures that Unisonic Technologies
Original
Abstract: UTC 2SB834 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR DESCRIPTION Low frequency power amplifier applications. 1 TO-220 1:BASE 2: COLLECTOR 3: EMITTER ABSOLUTE MAXIMUM RATINGS ( Operating temperature range applies unless otherwise specified ) PARAMETER SYMBOL RATING , 60-120 Y 100-200 GR 150-300 UNISONIC TECHNOLOGIES CO. LTD 1 QW-R203-014,A UTC 2SB834 , 2SB834 PNP EPITAXIAL SILICON TRANSISTOR UTC assumes no responsibility for equipment failures that Unisonic Technologies
Original
Abstract: Free Halogen Free 2SB834L-x-AB3-R 2SB834G-x-AB3-R 2SB834L-x-T60-K 2SB834G-x-T60-K 2SB834L-x-TA3-T 2SB834G-x-TA3-T 2SB834L-x-TF3-T 2SB834G-x-TF3-T www.unisonic.com.tw Copyright © 2013 Unisonic , UNISONIC TECHNOLOGIES CO., LTD 2SB834 PNP SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR ï , B C E B C E Packing Tape Reel Bulk Tube Tube 1 of 4 QW-R204-018.E 2SB834 ï , GR 150-300 2 of 4 QW-R204-018.E 2SB834 TYPICAL CHARACTERISTICS Collector Current vs Unisonic Technologies
Original
Showing first 20 results.