NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Part | Manufacturer | Description | Type | Ordering |
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: 2SA1734 PNP (PCT) 2SA1734 · : mm · : VCE (sat) = -0.5 V () (IC = -700 mA , : (//) ( / ) () () 1 2009-12-21 2SA1734 (Ta = 25°C , 2009-12-21 2SA1734 IC VCE hFE IC 1000 -10 -8 300 hFE -6 -0.8 -4 -0.6 , -10 -30 -100 3 IC -300 -1000 -3000 (mA) 2009-12-21 2SA1734 IC VBE , 100 Ta 120 140 160 (°C) 4 2009-12-21 2SA1734 · · · ... | Original |
5 pages, |
2SC4539 2SA1734 2SA1734 abstract |
| Abstract: 2SA1734 PNP (PCT) 2SA1734 · : mm · : VCE (sat) = -0.5 V () (IC = -700 mA , : (//) ( / ) () () 1 2006-11-07 2SA1734 (Ta = 25°C , VCC = -14 V () L No. B (: : ) 2 2006-11-07 2SA1734 IC VCE hFE , 3 IC -300 -1000 -3000 (mA) 2006-11-07 2SA1734 IC VBE -10 -1.2 , 120 140 160 (°C) 4 2006-11-07 2SA1734 20070701-JA 20070701-JA · · ... | Original |
5 pages, |
2SA1734 2SC4539 2SA1734 abstract |
| Abstract: 2SA1734 TOSHIBA Transistor Silicon PNP Triple Epitaxial Type (PCT process) 2SA1734 Power , 2SA1734 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min , )-free finish. 2 2004-07-07 2SA1734 IC VCE hFE IC 1000 -1.0 -10 -8 , IC (mA) 2004-07-07 2SA1734 IC VBE Safe Operating Area -10 -1.2 Common emitter , temperature Ta 120 140 160 (°C) 4 2004-07-07 2SA1734 RESTRICTIONS ON PRODUCT USE ... | Original |
5 pages, |
2SC4539 2SA1734 2SA1734 abstract |
| Abstract: 2SA1734 TOSHIBA Transistor Silicon PNP Triple Epitaxial Type (PCT process) 2SA1734 Power , 2SA1734 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min , 2 2002-08-19 2SA1734 IC VCE hFE IC 1000 -10 -8 Common emitter 300 hFE , -3000 (mA) 2002-08-19 2SA1734 IC VBE Safe Operating Area -10 -1.2 Common emitter , ) 4 2002-08-19 2SA1734 RESTRICTIONS ON PRODUCT USE 000707EAA 000707EAA · TOSHIBA is continually ... | Original |
5 pages, |
2SC4539 2SA1734 2SA1734 abstract |
| Abstract: 2SA1734 TOSHIBA Transistor Silicon PNP Triple Epitaxial Type (PCT process) 2SA1734 Power , 2SA1734 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min , 2 2002-08-19 2SA1734 IC VCE hFE IC 1000 -10 -8 Common emitter 300 hFE , -3000 (mA) 2002-08-19 2SA1734 IC VBE Safe Operating Area -10 -1.2 Common emitter , (°C) 4 2002-08-19 2SA1734 RESTRICTIONS ON PRODUCT USE 000707EAA 000707EAA · TOSHIBA is ... | Original |
5 pages, |
2SC4539 2SA1734 2SA1734 abstract |
| Abstract: 2SA1734 TOSHIBA Transistor Silicon PNP Triple Epitaxial Type (PCT process) 2SA1734 Power , 2SA1734 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min , )-free finish. 2 2006-11-09 2SA1734 IC VCE hFE IC 1000 -10 -8 Common , (mA) 2006-11-09 2SA1734 IC VBE Safe Operating Area -10 -1.2 Common emitter -5 , (°C) 4 2006-11-09 2SA1734 RESTRICTIONS ON PRODUCT USE 20070701-EN 20070701-EN · The information ... | Original |
5 pages, |
2SC4539 2SA1734 2SA1734 abstract |
| Abstract: Transistors IC SMD Type Silicon PNP Epitaxial 2SA1734 Features Low saturation voltage: VCE(sat) = -0.5 V (max) (IC = -700 mA). High speed switching time: tstg = 0.2ìs (typ.). Small flat package. PC = 1.0 to 2.0 W (mounted on ceramic substrate). Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -40 V Collector-emitter voltage , ceramic substrate (250 mm X 0.8 t) www.kexin.com.cn 1 Transistors IC SMD Type 2SA1734 ... | Original |
2 pages, |
SMD MARKING 2SA1734 smd ic marking PC 2SA1734 abstract |
| Abstract: TOSHIBA 2SA1734 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) 2 S A1734 A1734 POWER , : 0.05g Marking Type Name LB TO 1 2001-05-31 TOSHIBA 2SA1734 ELECTRICAL CHARACTERISTICS (Ta = 25°C , Time tf - 0.1 - 2 2001-05-31 TOSHIBA 2SA1734 IC - VCE I -10 -8 , COMMON EMITTER Ta = 25°C , -1000 -3000 COLLECTOR CURRENT Iq (mA) 3 2001-05-31 TOSHIBA 2SA1734 le - VBE SAFE OPERATING AREA , 0 20 40 60 80 100 120 140 160 AMBIENT TEMPERATURE Ta (°C) 4 2001-05-31 TOSHIBA 2SA1734 ... | OCR Scan |
5 pages, |
A1734 2SC4539 2SA1734 2SA1734 abstract |
| Abstract: TOSHIBA 2SA1734 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) 2SA1734 POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS Low Saturation Voltage : VCE(sat)=-0.5V (Max.) (IC= _ 700mA) High , 2SA1734 ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UN'IT , 2SA1734 IC - VCE -1.0 -O.i -0.6 -0.4 -0.2 I -10 "3- ' COMMON EMITTER Ta = 25°C A -- -6 , -3000 COLLECTOR CURRENT Iq (mA) 1997-04-10 3/4 TOSHIBA 2SA1734 le - VBE SAFE OPERATING AREA COMMON ... | OCR Scan |
4 pages, |
2SC4539 2SA1734 2SA1734 abstract |
| Abstract: TOSHIBA 2SA1734 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) 2 S A1734 A1734 POWER , : 0.05g (Typ.) MARKING Tnnr Type Name 1 2001-10-29 TOSHIBA 2SA1734 ELECTRICAL CHARACTERISTICS (Ta , tstg - 0.2 - Fall Time tf - 0.1 - 2 2001-10-29 TOSHIBA 2SA1734 IC - VCE I -10 -8 , 2SA1734 le - VBE SAFE OPERATING AREA COMMON EMITTER VCE=-2V I I 1 , 0 20 40 60 80 100 120 140 160 AMBIENT TEMPERATURE Ta (°C) 4 2001-10-29 TOSHIBA 2SA1734 ... | OCR Scan |
5 pages, |
A1734 2SC4539 2SA1734 2SA1734 abstract |
| Part | Manufacturer | Description | Shortform Datasheet | Ordering |
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