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Part Manufacturer Description Datasheet BUY
2N3019S Microsemi Corporation Transistor visit Digikey
2N2906AUB Microsemi Corporation Transistor visit Digikey
2N2221AUB Microsemi Corporation Transistor visit Digikey
2N3499L Microsemi Corporation Transistor visit Digikey
2N2222AUA Microsemi Corporation Transistor visit Digikey
SRF4427G Microsemi Corporation Transistor visit Digikey

2n706 transistor

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: NEW ENGLAND SEMICONDUCTOR SMALL SIGNAL NPN TRANSISTOR TO-18 ^C E O PACKAGE DEVICE TYPE (sus) VOLTS Ic (max) AMPS hpE @ IC / ^C E min/max @ mA/V VcE(jat) @ It/Iß v@ mA/mA TO-18 T0206AA 2N706 2N708 15 15 40h 50 80 45 30 40 30 40 15 15 15 20 30 45 0.05 0.5 0.5 0.03 0.8 0.8 0.8 0.8 0.5 0.5 0.5 0.5 0.1 0.1 20@ 10/1 30-120@10/l 40/120@l 50/10 40/120@150/10 40/120@l 50/10 150@0.5/5 40/120@150/10 40/120@ 150/10 100/300@150/10 100/300@ 150/10 10@ 100/2 20@ 100/2 20@ 100/1 30@100/1 50@5/l -
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2n2222 jan transistor 2n706 2N718 2N718AA 2N720A 2N930A 2N2221 2N2221AA
Abstract: DIGITRON ELECTRONIC CORP 3bE D 204EbD7 aOGOOGS 7 DIQITRON ELECTRONIC« CORE DGE T-J.y-01 Page #2 110 Hillside Avenue â'¢ Springfield. New Jersey 07081 â'¢ 201-379-9016 â'¢ 201-379-9019 Fax No. 201-467-8065 JOHN J. SCHWARTZ ENGINEERING DGE BOOK: TRANSISTOR EDDITION: ISSUE DATE: 110 Hillside Avenue Springfield, NJ 07081 Ref; No. TYPES TO BE ADDED fiâ'"1 2N497AI 2N539 2N696A , 2N736B 2N883 2N936 2N508A 2N561 2N706 2N736C 2N884 2N937 2N511 2N580 2N706A 2N738 2N8 85 2N938 2N511A -
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2N502A 2N554 2N555 2N942 2N945 2N772 2N65s 2n907 2N797 2N906 2N728 2N871 2N922 2N498 2N539A 2N697
Abstract: MI L-S-19500/120C AMENDMENT 3 10 May 1976 SUPERSEDING AMENDMENT 2 7 August 197*» MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR. NPN, SILICON, SWITCHING, LOW-POWER TYPE 2N706 This amendment forms a part of Military Specification MlL-S-19500/120C, dated 15 April 1970, and Is approved for use by all Departments and Agencies of the Department of Defense." Page 2 3.3*1, delete and substitute , specified in MiL-S-13500 may be omitted from the body of the transistor at the option of the manufacturers -
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L-S-13500
Abstract: NEW ENGLAND SEMICONDUCTOR SMALL SIGNAL NPN TRANSISTOR TO-18 PACKAGE DEVICE TYPE VcEO (sus) VOLTS Ic (max) AMPS h FE @ Ic/ VCE min/max @ mA/V VcE(iat) @IC/IB V@ mA/mA P fr (MHz) TO-18 T0206AA 2N706 15 0.05 20@10/1 0.6@10/1 6 200 2N708 15 - 30-120@10/l 0.4@10/1 6 300 2N718 40h 0.5 40/120@150/10 1.5@150/15 35 50 2N718AA 50 0.5 40/120@150/10 1.5@150/15 25 60 2N720A 80 - 40/120@150/10 5.0@ 150/5 15 50 2N930A 45 0.03 150@0.5/5 1.0@ 10/0.5 8 30 2N2221 30 0.8 40/120@150/10 0.4@150/15 8 250 -
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2N2222AA 2n2222 03150 transistor 2N720A JAN transistor 2N2222 transistor 2n2369 2N2222 2N2368 2N2369 2N2369A 2N3227
Abstract: 4W& ^w 2N706 Silizium-NPN-Epitaxial-Planar-Schalttransistor Silicon NPN Epitaxial Planar Switching Transistor Anwendungen: Schnelle Schalter Applications: Fast switches Abmessungen in mm Dimensions in mm 2 >4 mià 0 5.7 0 0,5 IF Kollektor mit Gehäuse verbunden Collector connected with case Normgehäuse Case 18 A 3 DIN 41876 JEDECTO 18 Gewicht â'¢ Weight max. 0,5 g Absolute Grenzdaten Absolute maximum ratings Kollektor-Basis-Sperrspannung Collector-base voltage Kollektor-Emitter-Sperrspannung -
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transistor #2N706
Abstract: SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, SWITCHING, LCW-PCWER TYPE 2N706 This specification Is mandatory , dimensions of transistor type 2N706 (TO-18). 3 i \_ e _ i o r n n / 1 9nr> JJ U * V V W / A H V V A , +.03, -.0 0 mm) below the seating plane o f the transistor maximum diameter leads shall lie nituin .0 0 , . * FIGURE 2. Gage fo r lead and tab location for translator type 2N706. TABLE I. Group A inspection M , following details shall apply: (a) All areas of the transistor body where marking has been applied sha -
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ILS 404 CB 3001 8AT transistor array K1 marking MIL-S-19500/120C MIL-S-19500/120B MIL-STD-202 MIL-STD-750 MIL-STD-1276 MIL-S-19500
Abstract: Transistors (Cont.) Discrete Devices Ultra High-Speed Logic Switches Type NPN Maximum Ratings Electrical Characteristics @ 25° C Package PD Ambient mW VCB Volts VCE Volts VEB Volts HpE @ "C VcE(Sat) @ lC/lB ft MHz Min Cob PF Max tON ns Max tOFF ns Max Min/Max mA Volts mA/mA 2N706 , -39 BSX48 2N2221 NPN TO-18 BSX88 2N2369A NPN TO-18 BSY38 2N706 NPN TO-18 BSY39 2N2369A NPN TO-18 BSY51 , Pack 3-17 Discrete Devices Beam Lead Chips Transistor Chips 100% Probed Parameters @ 25 -
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2N706B 2N706C 2N743A 2N744 2N783 2N784 equivalent transistor 2N1711 MOTOROLA 2n2102 TRANSISTOR DH3725 transistor bfy39 SP3725 NPN transistor 2n2222A plastic package 2N743 2N744A
Abstract: TYPE 2N3052 DUAL N-P-N SILICON TRANSISTOR B U L L E T I N N O . D L -S 6 7 4 2 3 6 , A U G U S T 1 9 6 3 - R E V I S E D A P R IL Î 9 6 7 DESIGNED FOR MINIATURIZED APPLICATIONS REQUIRING DEVICES SIMILAR TO 2N706, 2N708, 2N744, 2N753, 2N834, 2N914, ETC. · · Popular TO-89 Flatpack Facilitates , 2N3052 DUAL N-P-N SILICON TRANSISTOR e lectrical ch a racteristics a t 2 5 °C fre e -a ir te m p e ratu , slightly with transistor parameters. *PARAMETER MEASUREMENT INFORMATION +5.90 v -IN PU T " 3.90 v -
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Transistor 2N708
Abstract: general purpose and fast switching transistor selector guide guide de sélection ^ transistors usage qénéral et commutation rapide THOMSON-CSF y y r METAL-CASE/BOITIER METAL Case ¿¡¡^^70 18 ^^^TO 39 Polarity NPN PIMP NPN PNP NPN PNP NPN PNP , *on V «off Case ImWI (V) min max (mA) max (V) (mA) min (MHz) max (pF) max (ns) max (ns) 2N706 -
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BSW21 BSX51 bc 301 transistor bc 303 transistor A2N transistor BC 170c transistor TRANSISTOR BC 650 c transistor BSX 82 BSX52 BSW22 BSY53 BSY54
Abstract: SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, SWITCHING, LOW-POWER TYPE 2N706 This , transistor. 1.2 Physical dimensions. See figure 1 (TO-18) 1.3 Maximum ratings. pTi'' TA = 25° C VCBO y , MIL-S-19500 may be omitted from the body of the transistor at the option of the manufacturer , +.03, -.00 uro) below the seating plane of the transistor maximum diameter ieads shall ue wituin .007 , the actual device. 7. All 3 leads (see 3.3.1). * FIGURE 1. Physical dimensions of transistor type -
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mwab mwab 3.3 8TD-232 MJL-S-19900
Abstract: E-Line § T21 systems. ZTX314, BSV27 40 15tt 5 300 0 -5 100 10 40 120 10 500 13 10 E-Line § T21 2N706 , -18 configuration. For flat mounting, suffix M is added to the type number. Other Transistor types available -
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BSY95A ZTX310 BSV23 ZTX311 BSV24 BSV25 transistor t2a 2n2206 TRANSISTOR ztx312 transistor 2N2475 N706A Scans-00109884 ZTX312
Abstract: REGULATOR) b: 2N706 0REQUIV 0.001 pF ¿3k ♦ V0 -15 Vdc MC1469 MCI569 Specifications and , LOAD REGULATION 1 2.7 VQ'IOVi "il /TN 2N706 (7*^) Oft £QUIV MC 1569 MC 1469 0 001 nf i ^ Co , transistor across the reference zener diode. When this transistor is turned "ON", via pin 2, the reference , the regulator. A Darlington connected NPN power transistor is used to handle the load current. The short-circuit current limiting resistor, Rsc.>s connected in the emitter of this transistor to sample the full -
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MC1563R MC1569 MC1569R MC1469R N3055 MC1669 equivalent transistor 2 SA 1469 MCM63R MC1569/MC1469 MC1563 X-201
Abstract: E-Line § T21 systems. ZTX314, BSV27 40 15tt 5 300 0 -5 100 10 40 120 10 500 13 10 E-Line § T21 2N706 , -18 configuration. For flat mounting, suffix M is added to the type number. Other Transistor types available -
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BSV26 BFS40 NPN transistor 2n2222A st 2n 2907a ZDT- 5V ZT402 ZT404 npn general purpose medium speed ZTX313 2N709 N2476 100MH BFS36
Abstract: Transistors (Cont.) Discrete Devices Ultra High-Speed Logic Switches Type NPN Maximum Ratings Electrical Characteristics @ 25° C Package PD Ambient mW VCB Volts VCE Volts VEB Volts HpE @ "C VcE(Sat) @ lC/lB ft MHz Min Cob PF Max tON ns Max tOFF ns Max Min/Max mA Volts mA/mA 2N706 300 25 20* 3 20/- 10 0.2 10/1 200 6 40t 75t TO-18 2N706A 300 25 15 5 20/60 10 0.2 10/1 200 5 40 75 TO , Valuiis ^RAYTHEON^ 3-13 Discrete Devices Beam Lead Chips Transistor Chips 100% Probed Parameters -
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SY 360 05 BT2222A BT2605 2n22 2N784A 2N834A 2N835 2N2205 2N2481 2N3011
Abstract: TO-18 ZT 187 2N706A 25 20 - 0.6 10 1 20 60 10 200 10 300 TO-18 - 2N706 25 20 - 0.6 10 1 20 - 10 200 , SWITCHING TRANSISTOR SELECTOR CHART Devices listed are NPN except where marked with * which signifies PNP -
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2N3053 2N696 BFY51 BC107 BC177 BCY59 TRANSistor BC108 2n4001 TRANSISTOR TRANSISTOR BC140 Transistor BCY58 applications of Transistor BC108 Transistor BC177 2N4037 2N1131 2N1132
Abstract: -18 BSY38 2N706 NPN TO-18 BSY39 2N2369A NPN TO-18 BSY51 2N2218 NPN TO-39 BSY52 2N2219 NPN TO-39 BSY53 , Transistor Chips 100% Probed Parameters @ 25°C (Partial List) Mech. Outline Owg. Function -
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2N327A 2N328A 2N329A 2N329B 2N760 2N760A 2N2484 equivalent transistors 2N1025 transistor 2n1711 transistor 2N929 DH3725CN 2N327B 2N328B
Abstract: 10045 2N706/KVT 1.0 0 1.0 0 10 6.0M 6.0M 320MA 7.6m 7.6m 6.7m SJ SJ 85 65 25 20 S 2.0 2.0 3 0 60m 60m 50u 50u , ° C 0 - 60°C A ~ Pulsed t - Tetrode NPN or "N" Channel PNP or "P" Channel Field Effect Transistor , N-PL Si 175J T046 44 2N706/51 200MSA 60n 300m 1.0 0 1Om0 20 tA 60 6.Op0 N-E Si 175J T051 45 -
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2N5735 T120TA BSW12 BC216A 2SC621 PT4830 FV3299 NS949 200M5A NS950 S18000 2SC479H
Abstract: tight as possible. The heater is a PNP power transistor in a large TO-218 tab package screwed to a copper heat spreader. The thermistor is soldered to a lug under the transistor fixing screw, making good thermal contact. The crystal is clamped to the heat spreader alongside the heater transistor , amplifies it and passes a correction voltage to the heater driver transistor, TR1 If the temperature is , transistor (TR2) in the base circuit of another to protect the latter from excess current is a very useful -
Original
IC 741 OPAMP DATASHEET datasheet opamp 741 enamelled copper wire swg table BFR84 BF981 FET BFR84 pin out
Abstract: 135 tA 30 tA 2.5p(3 2.5p0 6.Od0 E E PE u23 C 37 # 38 39 2SC405t 2N706/TPT 2N706A/TPT 150m 150m , ° C 0 - 60°C A ~ Pulsed t - Tetrode NPN or "N" Channel PNP or "P" Channel Field Effect Transistor , N-PL Si 175J T046 44 2N706/51 200MSA 60n 300m 1.0 0 1Om0 20 tA 60 6.Op0 N-E Si 175J T051 45 -
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r107c 2SC622 transistor A495 SE504 BFS29P TMT697 BSW10 200MIA ST30100 NS2100 200MS NS2101
Abstract: D10B55 1-2.3 100m 300M5A 1.0m ♦J 40 15 5 0 ,O5u0 1.00 1Om0 30 tA# 6pE) PE ZA7 103 2N706/TNT , Channel PNP or "P" Channel Field Effect Transistor Radiation Resistant Device (See above also) [71 â , 80nt 400m 10 0 15Om0 30 # 5.3 14p N-PL Si 175J T046 44 2N706/51 200MSA 60n 300m 1.0 0 1Om0 20 -
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bc128 transistor BC128 2SC401 transistor 2N221 MT4102 2s745 BSW88 BSW89 BSX81 BSX81A BSX81B 2N2797
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