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Part Manufacturer Description Datasheet BUY
JAN2N6250T1 Microsemi Corporation Power Bipolar Transistor, 10A I(C), 275V V(BR)CEO, 1-Element, NPN, Silicon, TO-254AA, TO-254, 3 PIN visit Digikey Buy
JAN2N6250 Microsemi Corporation Power Bipolar Transistor, 10A I(C), 275V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AA, Metal, 2 Pin, TO-3, 2 PIN visit Digikey Buy
JANS2N6250T1 Microsemi Corporation Power Bipolar Transistor, 10A I(C), 275V V(BR)CEO, 1-Element, NPN, Silicon, TO-254AA, TO-254, 3 PIN visit Digikey Buy
JANTXV2N6250 Microsemi Corporation Power Bipolar Transistor, 10A I(C), 275V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AA, Metal, 2 Pin, TO-3, 2 PIN visit Digikey Buy
JANTX2N6250T1 Microsemi Corporation Power Bipolar Transistor, 10A I(C), 275V V(BR)CEO, 1-Element, NPN, Silicon, TO-254AA, TO-254, 3 PIN visit Digikey Buy
JANTXV2N6250T1 Microsemi Corporation Power Bipolar Transistor, 10A I(C), 275V V(BR)CEO, 1-Element, NPN, Silicon, TO-254AA, TO-254, 3 PIN visit Digikey Buy

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Part : 2N6250JANTX Supplier : COBHAM Manufacturer : Avnet Stock : - Best Price : $70.00 Price Each : $76.4474
Part : 2N6250JANTXV Supplier : COBHAM Manufacturer : Avnet Stock : - Best Price : $83.3253 Price Each : $91.00
Part : JAN2N6250 Supplier : COBHAM Manufacturer : Avnet Stock : - Best Price : $68.1928 Price Each : $74.4737
Part : 2N6250 Supplier : SOLIDSTATE Manufacturer : basicEparts Stock : 10 Best Price : - Price Each : -
Part : JANTX2N6250MSC Supplier : Microsemi Manufacturer : NexGen Digital Stock : 157 Best Price : - Price Each : -
Part : 2N6250 Supplier : TT Electronics Manufacturer : New Advantage Stock : 2 Best Price : - Price Each : -
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2n6250 Datasheet

Part Manufacturer Description PDF Type
2N6250 Central Semiconductor POWER TRANSISTORS TO-3 CASE Original
2N6250 Microsemi NPN POWER SILICON TRANSISTOR Original
2N6250 Semelab Bipolar NPN Device in a Hermetically Sealed TO3 Metal Package - Pol=NPN / Pkg=TO3 / Vceo=275 / Ic=10 / Hfe=8-50 / fT(Hz)=2.5M / Pwr(W)=100 Original
2N6250 Advanced Semiconductor Silicon Transistor Selection Guide Scan
2N6250 API Electronics Short form transistor data Scan
2N6250 Diode Transistor Transistor Short Form Data Scan
2N6250 Fairchild Semiconductor Full Line Condensed Catalogue 1977 Scan
2N6250 General Electric 375V, 30A, 175W silicon N-P-N switcing transistor. - Pol=NPN / Pkg=TO3 / Vceo=275 / Ic=10 / Hfe=8-50 / fT(Hz)=2.5M / Pwr(W)=100 Scan
2N6250 Motorola Motorola Semiconductor Data & Cross Reference Book Scan
2N6250 Motorola Switchmode Datasheet Scan
2N6250 Motorola European Master Selection Guide 1986 Scan
2N6250 N/A Transistor Shortform Datasheet & Cross References Scan
2N6250 N/A Basic Transistor and Cross Reference Specification Scan
2N6250 N/A Shortform Transistor PDF Datasheet Scan
2N6250 N/A Shortform Transistor PDF Datasheet Scan
2N6250 N/A Transistor Replacements Scan
2N6250 N/A Cross Reference Datasheet Scan
2N6250 N/A Catalog Scans - Shortform Datasheet Scan
2N6250 N/A Transistor Replacements Scan
2N6250 N/A Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan
Showing first 20 results.

2n6250

Catalog Datasheet MFG & Type PDF Document Tags

2N6250

Abstract: 2N6251 2N6249 ­ 2N6250 ­ 2N6251 HIGH VOLTAGE NPN SILICON POWER TRANSISTORS The 2N6249 ­ 2N6250 ­ , SEMICONDUCTORS Value 2N6249 2N6250 2N6251 2N6249 2N6250 2N6251 2N6249 2N6250 2N6251 2N6249 2N6250 2N6251 2N6249 2N6250 2N6251 2N6249 2N6250 2N6251 2N6249 2N6250 2N6251 2N6249 2N6250 2N6251 2N6249 2N6250 2N6251 2N6249 2N6250 2N6251 200 275 350 225 300 375 300 375 450 6.0 Unit V V Vdc Vdc 15 Adc 30 10 Adc 20 25 Adc 50 1/3 2N6249 ­ 2N6250 ­ 2N6251
Comset Semiconductors
Original
2N6259 Datasheet 2N6251

2N6251

Abstract: 2N6249 Product Specification www.jmnic.com 2N6249 2N6250 2N6251 Silicon NPN Power Transistors , 2N6249 VCBO Collector-base voltage 2N6250 VALUE 300 Open emitter 375 2N6251 Collector-emitter voltage 200 2N6250 Open base 2N6251 VEBO V 450 2N6249 VCEO UNIT , junction to case MAX /W Product Specification www.jmnic.com 2N6249 2N6250 2N6251 Silicon , CONDITIONS MIN 2N6249 VCEO(SUS) Collector-emitter sustaining voltage 2N6250 IC=200mA ; IB
JMnic
Original

2N6250

Abstract: 2N6251 2N6250 Qualified Level JAN JANTX JANTXV JANHC 2N6251 MAXIMUM RATINGS Ratings Symbol , VEBO IC IB 2N6249 200 300 PT 2N6250 275 375 6.0 10 5.0 5.5 175 2N6251 350 450 , ) 2N6249 2N6250 2N6251 Collector-Emitter Breakdown Voltage IC = 200 mAdc; L = 14 mH; F = 30-60 Hz; RBE = 50 (See Figure 3 of MIL-PRF-19500/510) 2N6249 2N6250 2N6251 Emitter-Base Cutoff Current VEB = 6 Vdc Collector-Emitter Cutoff Current VCE = 150 Vdc 2N6249 VCE = 225 Vdc 2N6250 VCE = 300
Microsemi
Original

2N6249

Abstract: 2N6250 2N6250 Qualified Level JAN JANTX JANTXV JANHC 2N6251 MAXIMUM RATINGS Ratings Symbol 2N6249 2N6250 Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector , ) 2N6249 2N6250 2N6251 Collector-Emitter Breakdown Voltage IC = 200 mAdc; L = 14 mH; F = 30-60 Hz; RBE = 50 (See Figure 3 of MIL-PRF-19500/510) 2N6249 2N6250 2N6251 Emitter-Base Cutoff Current VEB = 6 Vdc Collector-Emitter Cutoff Current VCE = 150 Vdc 2N6249 VCE = 225 Vdc 2N6250 VCE = 300
Microsemi
Original

2N6250

Abstract: 2N6251 SavantIC Semiconductor Product Specification 2N6249 2N6250 2N6251 Silicon NPN Power , VCBO Collector-base voltage 2N6250 VALUE 300 Open emitter 375 2N6251 Collector-emitter voltage 200 2N6250 Open base 2N6251 VEBO Emitter-base voltage V 450 , 1.0 UNIT /W SavantIC Semiconductor Product Specification 2N6249 2N6250 2N6251 Silicon , CONDITIONS 2N6249 VCEO(SUS) Collector-emitter sustaining voltage 2N6250 IC=200mA ; IB=0 IC
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Original
Abstract: JAN JANTX JANTXV JANHC Devices 2N6249 2N6250 2N6251 MAXIMUM RATINGS Ratings Symbol 2N6249 2N6250 Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector , ) 2N6249 2N6250 2N6251 Collector-Emitter Breakdown Voltage IC = 200 mAdc; L = 14 mH; F = 30-60 Hz; RBE = 50â"¦ (See Figure 3 of MIL-PRF-19500/510) 2N6249 2N6250 2N6251 Emitter-Base Cutoff Current VEB = 6 Vdc Collector-Emitter Cutoff Current VCE = 150 Vdc 2N6249 VCE = 225 Vdc 2N6250 VCE = 300 Microsemi
Original
MIL-PRF-19500/ N6250

2N6250

Abstract: 2N6251 NPN High Power Silicon Transistors 2N6249, 2N6250, 2N6251 Features · · Available in JAN, JANTX , Dissipation @ TA = +25 °C (1) @ TA = +25 °C (2) Symbol VCEO VCBO VEBO IC IB PT TOP, Tstg 2N6249 200 300 2N6250 , ) Emitter-Base Cutoff Current VEB = 6.0 Vdc 2N6249 2N6250 2N6251 2N6249 2N6250 2N6251 Symbol I(BR)CEO Mimimum -Maximum 200 275 350 225 300 375 100 Units Vdc I(BR)CER - Vdc IEBO 2N6249 2N6250 2N6251 , -1.5 Vdc ICEO - 1.0 mAdc 2N6249 2N6250 2N6251 ICEX - 100 Adc Revision
Aeroflex / Metelics
Original
2n6251 application 125Adc MIL-PRF-19500/371 888-641-SEMI

2N6250

Abstract: 2N6251 Inchange Semiconductor Product Specification 2N6249 2N6250 2N6251 Silicon NPN Power , voltage SEM Open emitter 2N6250 2N6251 2N6249 Emitter-base voltage UNIT 300 375 V 450 200 Open base 2N6250 2N6251 VEBO TOR DUC VALUE 275 V 350 Open , Product Specification 2N6249 2N6250 2N6251 Silicon NPN Power Transistors CHARACTERISTICS Tj , ) Collector-emitter sustaining voltage 2N6250 IC=200mA ; IB=0 hFE IC=10A;IB=1.0A 2N6250 IC=10A;IB
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Original

2N6250

Abstract: 2N6249 2N6250 Qualified Level JAN JANTX JANTXV JANHC 2N6251 MAXIMUM RATINGS Ratings Symbol 2N6249 2N6250 Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector , ) 2N6249 2N6250 2N6251 Collector-Emitter Breakdown Voltage IC = 200 mAdc; L = 14 mH; F = 30-60 Hz; RBE = 50 (See Figure 3 of MIL-PRF-19500/510) 2N6249 2N6250 2N6251 Emitter-Base Cutoff Current VEB = 6 Vdc Collector-Emitter Cutoff Current VCE = 150 Vdc 2N6249 VCE = 225 Vdc 2N6250 VCE = 300
Microsemi
Original
Abstract: NPN High Power Silicon Transistors 2N6249, 2N6250, 2N6251 Features â'¢ Available in JAN , 2N6249 2N6250 2N6251 Units Collector - Emitter Voltage Ratings VCEO 200 275 , Units 2N6249 2N6250 2N6251 I(BR)CEO - 200 275 350 Vdc 2N6249 2N6250 2N6251 , 2N6249 2N6250 2N6251 ICEO - 1.0 mAdc Collector-Emitter Cutoff Current VCE = 225 Vdc, VBE = -1.5 Vdc VCE = 300 Vdc, VBE = -1.5 Vdc VCE = 375 Vdc, VBE = -1.5 Vdc 2N6249 2N6250 2N6251 Aeroflex / Metelics
Original

2N6249T1

Abstract: 2n6250 DEVICES LEVELS 2N6249 2N6249T1 2N6250 2N6250T1 2N6251 2N6251T1 JAN JANTX JANTXV JANS , , Junction-to-Case Symbol VCEO VCBO VEBO IC IB PT Top, Tstg RJC 2N6249 2N6250 2N6251 Unit 2N6249T1 2N6250T1 2N6251T1 , , 2N6249T1 only) Test 5 VCE = 275Vdc, IC = 0.09Adc (For 2N6250, 2N6250T1 only) Test 6 VCE = 350Vdc, IC = , -19500/510) 2N6249, T1 2N6250, T1 2N6251, T1 200 275 350 225 300 375 100 Symbol Min. Max. Unit TO-254 V(BR , RBE = 50 2N6250, T1 (See Figure 10 of MIL-PRF-19500/510) 2N6251, T1 Emitter-Base Cutoff Current VEB =
Microsemi
Original
T4-LDS-0197 AL203

a6251

Abstract: 2N6249 DEVICE, TRANSISTOR, NPN, SILICON, POWER TYPES 2N6249, 2N6250, AND 2N6251 JAN, JANTX, JANTXV, JANS , 2N6249 5.5 2N6250 5.5 2N6251 5.5 Type PT 2/ TC = +25(C W 175 , . Types 2N6249 2N6250 2N6251 Limits Minimum , to emitter 2N6249 2N6250 2N6251 Breakdown voltage, collector to emitter 2N6249 2N6250 2N6251 Emitter to base cutoff current Collector to emitter cutoff
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Original
a6251 QPL-19500 A6249 MIL-PRF-19500/510C MIL-S-19500/510B MIL-PRF-19500

a6251

Abstract: cc 3053 diode , TYPE 2N6249, 2N6249T1, 2N6249T3, 2N6250, 2N6250T1, 2N6250T3, 2N6251, 2N6251T1, 2N6251T3, JAN, JANTX , VEBO IC IB TJ and TSTG W 2N6249 2N6249T1 2N6249T3 2N6250 2N6250T1 2N6250T3 2N6251 , cutoff current 2N6249, 2N6249T1 2N6249T3 2N6250, 2N6250T1 2N6250T3 2N6251, 2N6251T1 2N6251T3 , 2N6250, 2N6250T1 2N6250T3 2N6251, 2N6251T1 2N6251T3 3041 Bias condition A, VBE = -1.5 V dc , 2N6250, 2N6250T1 2N6250T3 2N6251, 2N6251T1 2N6251T3 3076 Collector to emitter saturated voltage
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Original
cc 3053 diode MIL-PRF-19500/510F MIL-PRF-19500/510E JANHC6249 A6249T1 A6249T3 A6250

RCA-2N6249

Abstract: 2n62501 {2N6249).6(2N62501. liii - ÃÃ iiil liii â'"I.:-: 08 , Transistors File Number 523 2N6249, 2N6250, 2N6251 450-V, 30-A, 175-W Silicon N-P-N Switching Transistors , ratings: Vcbo = 450 V (2N6251) 375 V (2N6250) 300 V (2N6249) â  High dissipation rating: PT = 175 W â  Low saturation voltages â  Maximum sale-area-of-operation curves RCA-2N6249, 2N6250 and 2N6251 are , , and fast-switching capability of the 2N6250 and 2N6251 make them especially suitable for inverter
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OCR Scan
HGP-I004 clare mercury relay 220V 30A Relay IC 350B i947 solid state relay 220V T0-204AA 92CS-I94B9RI 9ZCS-I9467RI 2N3879 2C5-I94MAJ

Si948

Abstract: 2n6250 . 2-108 2N6249. 2N6250. 2N6251 HARRIS SENICON]) SECTOR SbE D 4305271 0G40S31 ia*ï H H A S , File Number 523 2N6249, 2N6250, 2N6251 HARRIS SEMICON]) SECTOR SbE D 43 G 2571 004 Q , Maximum safe-area-of-oporation curves The 2N6249, 2N6250 and 2N6251 are multiple epitaxial silicon n-p-n , 2N6250 and 2N6251 make them especially suitable for inverter circuits operating directly off the , . TERMINAL DESIGNATIONS JEDEC TO-213AA 2N6249 300 200 225 225 6 10 30 10 175 2N6250
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OCR Scan
Si948 2N62S1 2W6250 S-I9489H 92CS-I9467RI P6019

s 2 umi 1A 250V

Abstract: 2N6249 POWER TRANSISTORS ÌOA, 450V, Fast Switching, Silicon NPN Mesa 2N6249 2N6250 2N6251 FEATURES ,   UNITRODE 2N6249 2N6250 2N6251 ELECTRICAL SPECIFICATIONS (at 25°C unless noted) Test Symbol 2N6249 2N6250 2N6251 Units Test Conditions MIN. MAX. MIN. MAX. MIN. MAX. D.C. Current Gain (Note 1) hFE , 1.5 V lc = 10A lB = 1.0A (2N6249) 1, = 1.25A (2N6250) lâ'ž - 1.67A (2N6251) Base Saturation Voltage , (2N6250) lâ'ž = l,2 = 1.67A (2N6251) Storage Time 1.8 3.5 1.Ì 3.5 l.à 3.5 Fall Time t, 0.5 1.0 0.5
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OCR Scan
s 2 umi 1A 250V N62S

200V transistor npn 10a

Abstract: 2N6249 ) 435-1110 â'¢ Fax: (631) 435-1824 Manufacturers of World Class Discrete Semiconductors 2N6249 2N6250 2N6251 NPN SILICON TRANSISTOR JEDEC TO-3 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR 2N6249, 2N6250 , Resistance ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) 2N6249 2N6250 2N6251 symbol 2n6249 2n6250 2n6251 units vcbo 300 375 450 v vceo 200 275 350 v vcev 225 300 375 v vcer 225 300 375 , 5.8 2.5 2.0 3.5 1.0 2N6250 2.5 5.8 2.5 2.0 3.5 1.0 2N6251 _, MIN MAX UNIT 2.5 MHz 5.8 A
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OCR Scan
200V transistor npn 10a 200v 10a npn transistor

Si948

Abstract: IC 350B File N um ber 523 2N6249, 2N6250, 2N6251 450-V, 30-A, 175-W Silicon N-P-N Switching , . 300 200 225 225 6 10 30 10 175 2N6250 375 275 300 300 6 10 30 10 175 -65 to +200 2N6251 , POWER TRANSISTORS 2N6249, 2N6250, 2N6251 ELE C TR IC A L C H A R A C TER IS TIC S, A t Case , CUR RENT (A) b 0 0 0 LIMITS U N 1 T S 2N6249 MIN. TYP. MAX. _ - 2N6250 MIN. TYP. MAX. 5 , - 1 1 _ - · 0.5 - ' 1 °C/W 1 - a ^ 2-106 2N6249, 2N6250, 2N6251 92CS
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OCR Scan
si9482 92CS- I9489RI

lt 6249

Abstract: Lt 6251 «500 Hi COLLECTOR SUPPLY VOLTAGE (VCC>*20G v · CASE TEMPERATURE(Tc)*25 *C I C/ I B*I0 , Power Transistors 523 2N6249, 2N6250, 2N6251 450-V, 30-A, 175-W Silicon N-P-N Switching , 225 225 6 10 30 10 175 2N6250 375 275 300 300 6 10 30 10 175 Derate Linearly at 1 -AS to +?00 .2 3 , _ _ 2N6249, 2N6250, 2N6251 E LE C T R IC A L C H AR A C TE R IS TIC S , A t Case Temperature (T q , - p "T " ' 3 ` £ "~{S> High-VoltagePower Transistors 2N6249, 2N6250, 2N6251 6 8
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OCR Scan
lt 6249 Lt 6251

Sustaining

Abstract: 2N6250 O OOOflDS? o 9097250 TOSHIBA , E T E / O P T O ) 56C 0805 8 D T - 3 3 >^ . í 2N6250 j Ic - V 0E Io ~ V BE
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OCR Scan
Sustaining 0XQ03
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