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Part Manufacturer Description Datasheet BUY
2N6071BTG Littelfuse Inc 4 Quadrant Logic Level TRIAC, 200V V(DRM), 4A I(T)RMS, TO-225, LEAD FREE, CASE 77-09, 3 PIN visit Digikey Buy
2N6071AG Littelfuse Inc 4 Quadrant Logic Level TRIAC, 200V V(DRM), 4A I(T)RMS, TO-225, LEAD FREE, CASE 77-09, 3 PIN visit Digikey Buy
2N6073AG Littelfuse Inc 4 Quadrant Logic Level TRIAC, 400V V(DRM), 4A I(T)RMS, TO-225, LEAD FREE, CASE 77-09, 3 PIN visit Digikey Buy
2N6071ATG Littelfuse Inc 4 Quadrant Logic Level TRIAC, 200V V(DRM), 4A I(T)RMS, TO-225, LEAD FREE, CASE 77-09, 3 PIN visit Digikey Buy
2N6041 Central Semiconductor Corp Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN visit Digikey Buy
2N6099 Central Semiconductor Corp Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN visit Digikey Buy

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2n60 Datasheet

Part Manufacturer Description PDF Type
2N60 Kexin N-Channel MOSFET Original
2N60 TY Semiconductor N-Channel MOSFET - TO-220 Original
2N60 Unisonic Technologies 2 Amps, 600 Volts N-CHANNEL MOSFET Original
2N-60 Inmet ATTENUATOR Scan
2N60 Motorola Motorola Semiconductor Datasheet Library Scan
2N60 N/A Semiconductor Master Cross Reference Guide Scan
2N60 N/A Shortform Transistor Datasheet Guide Scan
2N60 N/A Vintage Transistor Datasheets Scan
2N60 N/A Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan
2N60 N/A Transistor Shortform Datasheet & Cross References Scan
2N60 N/A Basic Transistor and Cross Reference Specification Scan
2N60 N/A GE Transistor Specifications Scan
2N60 N/A Shortform Transistor PDF Datasheet Scan
2N600 Motorola Motorola Semiconductor Datasheet Library Scan
2N600 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
2N600 N/A Shortform Transistor Datasheet Guide Scan
2N600 N/A Vintage Transistor Datasheets Scan
2N600 N/A Vintage Transistor Datasheets Scan
2N600 N/A Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan
2N600 N/A Transistor Shortform Datasheet & Cross References Scan
Showing first 20 results.

2n60

Catalog Datasheet MFG & Type PDF Document Tags

2n60

Abstract: 2n60b Packing Tube Tube Tube Tape Reel Tube Ordering Number Normal Lead Free Plating 2N60-x-TA3-T 2N60L-x-TA3-T 2N60-x-TF3-T 2N60L-x-TF3-T 2N60-x-TM3-T 2N60L-x-TM3-T 2N60-x-TN3-R 2N60L-x-TN3-R 2N60-x-TN3-T 2N60L-x-TN3-T , .Source ORDERING INFORMATION Halogen Free 2N60G-x-TA3-T 2N60G-x-TF3-T 2N60G-x-TM3-T 2N60G-x-TN3-R 2N60G-x-TN3-T S , ) PARAMETER SYMBOL 2N60-A 2N60-B Power MOSFET RATINGS UNIT 600 V Drain-Source Voltage VDSS 650 V , specified) SYMBOL 2N60-A 2N60-B Forward Reverse BVDSS IDSS IGSS TEST CONDITIONS VGS = 0V, ID = 250A VDS =
Unisonic Technologies
Original
QW-R502-053 2n60b 2N60A UTC2N60 2n60 MOSFEt DC 2N60 mosfet 2n60 2N60L 2N60G 2N60G- 2N60- 2N60L-

2n60 MOSFEt

Abstract: 2n60 Ordering Number Normal Lead Free Plating 2N60-x-TA3-T 2N60L-x-TA3-T 2N60-x-TF1-T 2N60L-x-TF1-T 2N60-x-TF3-T 2N60L-x-TF3-T 2N60-x-TM3-T 2N60L-x-TM3-T 2N60-x-TN3-R 2N60L-x-TN3-R Note: Pin Assignment: G: Gate D: Drain Halogen Free 2N60G-x-TA3-T 2N60G-x-TF1-T 2N60G-x-TF3-T 2N60G-x-TM3-T 2N60G-x-TN3-R S , 200A/s, VDD BVDSS, Starting TJ = 25°C 2N60-A 2N60-B THERMAL DATA PARAMETER PACKAGE TO , CHARACTERISTICS Drain-Source Breakdown Voltage SYMBOL 2N60-A 2N60-B Forward Reverse Breakdown Voltage
Unisonic Technologies
Original
2n60 equivalent 2N60 power mosfet CHARACTERISTICS DIODE 2n60 2N60L equivalent UTC 2N60L 2N60 TO-251 UTC
Abstract: INFORMATION Ordering Number Package Normal Lead Free Plating 2N60-x-TA3-T 2N60L-x-TA3-T TO-220 2N60-x-TF3-T 2N60L-x-TF3-T TO-220F 2N60-x-TM3-T 2N60L-x-TM3-T TO-251 2N60-x-TN3-R 2N60L-x-TN3-R TO-252 2N60-x-TN3-T 2N60L-x-TN3-T TO-252 Note: Pin Assignment: G: Gate D: Drain S: Source www.unisonic.com.tw , ratings are stress ratings only and functional device operation is not implied. 2N60-A 2N60-B THERMAL , specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage SYMBOL 2N60-A 2N60-B Unisonic Technologies
Original
Abstract: INFORMATION Order Number Package Normal Lead Free Plating 2N60-x-TA3-T 2N60L-x-TA3-T TO-220 2N60-x-TF3-T 2N60L-x-TF3-T TO-220F 2N60-x-TM3-T 2N60L-x-TM3-T TO-251 2N60-x-TN3-R 2N60L-x-TN3-R TO-252 2N60-x-TN3-T 2N60L-x-TN3-T TO-252 Note: Pin Assignment: G: Gate D: Drain S: Source www.unisonic.com.tw , , Starting TJ = 25°C 2N60-A 2N60-B ELECTRICAL CHARACTERISTICS (TJ =25â"ƒ, unless Otherwise specified.) PARAMETER Off Characteristics Drain-Source Breakdown Voltage SYMBOL 2N60-A 2N60-B Zero Gate Unisonic Technologies
Original

2N60B

Abstract: 2N60 power mosfet Halogen Free 2N60L-x-TA3-T 2N60G-x-TA3-T 2N60L-x-TF1-T 2N60G-x-TF1-T 2N60L-x-TF3-T 2N60G-x-TF3-T 2N60L-x-TM3-T 2N60G-x-TM3-T 2N60L-x-TMA-T 2N60G-x-TMA-T 2N60L-x-TN3-R 2N60G-x-TN3-R Note: Pin , . ISD2.4A, di/dt200A/s, VDD BVDSS, Starting TJ = 25°C 2N60-A 2N60-B THERMAL DATA PARAMETER , ) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage SYMBOL 2N60-A 2N60-B Drain-Source , UNISONIC TECHNOLOGIES CO., LTD 2N60 Power MOSFET 2 Amps, 600/650 Volts N-CHANNEL POWER
Unisonic Technologies
Original
datasheet 2n60 TO-251L 2N60 transistor power mosfet 200A

2n60 MOSFEt

Abstract: 2n60 D G S ORDERING INFORMATION Order Number Package Normal Lead Free Plating 2N60-TA3-0-T 2N60L-TA3-0-T TO-220 2N60-TF3-0-T 2N60L-TF3-0-T TO-220F 2N60-TM3-0-T 2N60L-TM3-0-T TO-251 2N60-TN3-0-R 2N60L-TN3-0-R TO-252 2N60-TN3-0-T 2N60L-TN3-0-T TO-252 Note: Pin Assignment: G: Gate D: Drain S: Source 2N60L-TA3-0-R (1)Packing Type (2)Pin Assignment (3)Package Type (4)Lead Plating (1) R: Tape Reel (2 , UNISONIC TECHNOLOGIES CO., LTD 2N60 2A 600V N-CHANNEL MOSFET 1 TO-251 MOSFET FEATURES
Unisonic Technologies
Original
B2N60 to-251 mosfet
Abstract: Number Package Lead Free Halogen Free 2N60L-TA3-T 2N60G-TA3-T TO-220 2N60L-TF1-T 2N60G-TF1-T TO-220F1 2N60L-TF3-T 2N60G-TF3-T TO-220F 2N60L-TM3-T 2N60G-TM3-T TO-251 2N60L-TMA-T 2N60G-TMA-T TO-251L 2N60L-TMS-T 2N60G-TMS-T TO-251S 2N60L-TN3-T 2N60G-TN3-T TO-252 2N60L-TN3-R 2N60G-TN3-R TO-252 2N60L-T2Q-T 2N60G-T2Q-T TO-262 2N60L-T60-K 2N60G-T60-K TO-126 2N60L-T6C-K 2N60G-T6C-K TO-126C 2N60L-E-K08-5060-R 2N60G-E-K08-5060-R DFN-8(5×6) Note: Pin Assignment: G: Gate D: Drain S: Source Unisonic Technologies
Original
Abstract: Number Package Lead Free Halogen Free 2N60L-TA3-T 2N60G-TA3-T TO-220 2N60L-TF1-T 2N60G-TF1-T TO-220F1 2N60L-TF3-T 2N60G-TF3-T TO-220F 2N60L-TM3-T 2N60G-TM3-T TO-251 2N60L-TMA-T 2N60G-TMA-T TO-251L 2N60L-TMS-T 2N60G-TMS-T TO-251S 2N60L-TN3-R 2N60G-TN3-R TO-252 2N60L-TND-R 2N60G-TND-R TO-252D 2N60L-T2Q-T 2N60G-T2Q-T TO-262 2N60L-T60-K 2N60G-T60-K TO-126 2N60L-T6C-K 2N60G-T6C-K TO-126C 2N60L-E-K08-5060-R 2N60G-E-K08-5060-R DFN-8(5×6) Note: Pin Assignment: G: Gate D: Drain S: Source Unisonic Technologies
Original

2n60

Abstract: 2N60 TO-251 UTC Plating 2N60-TA3-T 2N60L-TA3-T TO-220 2N60-TF3-T 2N60L-TF3-T TO-220F 2N60-TM3-T 2N60L-TM3-T TO-251 2N60-TN3-R 2N60L-TN3-R TO-252 2N60-TN3-T 2N60L-TN3-T TO-252 Note: Pin Assignment: G: Gate D: Drain S: Source 2N60L-TA3-T Pin Assignment 1 2 3 G D S G D S G D S G D S G D S , UNISONIC TECHNOLOGIES CO., LTD 2N60 Power MOSFET 2 Amps, 600 Volts N-CHANNEL MOSFET 1 TO- 251 1 DESCRIPTION The UTC 2N60 is a high voltage MOSFET and is designed to have better
Unisonic Technologies
Original
2N60-TA

2n60

Abstract: 2N60G-TN3-R 2N60L-TA3-T 2N60G-TA3-T 2N60L-TF1-T 2N60G-TF1-T 2N60L-TF3-T 2N60G-TF3-T 2N60L-TM3-T 2N60G-TM3-T 2N60L-TMA-T 2N60G-TMA-T 2N60L-TN3-R 2N60G-TN3-R 2N60L-T2Q-T 2N60G-T2Q-T 2N60L-T60-K 2N60G-T60-K Note: Pin Assignment , UNISONIC TECHNOLOGIES CO., LTD 2N60 2A, 600V N-CHANNEL POWER MOSFET DESCRIPTION 1 Power MOSFET 1 TO-220 1 TO-220F The UTC 2N60 is a high voltage MOSFET and is designed to have , 1 of 6 QW-R502-053.Na 2N60 ABSOLUTE MAXIMUM RATINGS (TC = 25°, unless otherwise specified
Unisonic Technologies
Original

2n60b

Abstract: 2N60A Halogen Free 2N60L-x-TA3-T 2N60G-x-TA3-T 2N60L-x-TF1-T 2N60G-x-TF1-T 2N60L-x-TF3-T 2N60G-x-TF3-T 2N60L-x-TM3-T 2N60G-x-TM3-T 2N60L-x-TMA-T 2N60G-x-TMA-T 2N60L-x-TN3-R 2N60G-x-TN3-R Note: Pin , °C 4. ISD≤2.4A, di/dt≤200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C 2N60-A 2N60-B THERMAL DATA , Voltage SYMBOL 2N60-A 2N60-B Drain-Source Leakage Current Gate-Source Leakage Current BVDSS , UNISONIC TECHNOLOGIES CO., LTD 2N60 Power MOSFET 2 Amps, 600/650 Volts N-CHANNEL POWER
Unisonic Technologies
Original

2N60B

Abstract: Plating 2N60-x-TA3-T 2N60L-x-TA3-T TO-220 2N60-x-TF3-T 2N60L-x-TF3-T TO-220F 2N60-x-TM3-T 2N60L-x-TM3-T TO-251 2N60-x-TN3-R 2N60L-x-TN3-R TO-252 2N60-x-TN3-T 2N60L-x-TN3-T TO-252 Note: Pin Assignment: G: Gate D: Drain S: Source 2N60L-x-TA3-T Pin Assignment 1 2 3 G D S G D S G D S , , Starting TJ = 25°C 2N60-A 2N60-B ELECTRICAL CHARACTERISTICS (TJ =25â"ƒ, unless Otherwise specified.) PARAMETER Off Characteristics Drain-Source Breakdown Voltage SYMBOL 2N60-A 2N60-B Zero Gate
Unisonic Technologies
Original
Abstract: Number Package Lead Free Halogen Free 2N60L-TA3-T 2N60G-TA3-T TO-220 2N60L-TF1-T 2N60G-TF1-T TO-220F1 2N60L-TF3-T 2N60G-TF3-T TO-220F 2N60L-TM3-T 2N60G-TM3-T TO-251 2N60L-TMA-T 2N60G-TMA-T TO-251L 2N60L-TMS-T 2N60G-TMS-T TO-251S 2N60L-TN3-T 2N60G-TN3-T TO-252 2N60L-TN3-R 2N60G-TN3-R TO-252 2N60L-T2Q-T 2N60G-T2Q-T TO-262 2N60L-T60-K 2N60G-T60-K TO-126 2N60L-T6C-K 2N60G-T6C-K TO-126C 2N60L-E-K08-5060-R 2N60G-E-K08-5060-R DFN-8(5×6) Note: Pin Assignment: G: Gate D: Drain S: Source Unisonic Technologies
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Abstract: Halogen Free 2N60L-TA3-T 2N60G-TA3-T TO-220 2N60L-TF1-T 2N60G-TF1-T TO-220F1 2N60L-TF3-T 2N60G-TF3-T TO-220F 2N60L-TM3-T 2N60G-TM3-T TO-251 2N60L-TMA-T 2N60G-TMA-T TO-251L 2N60L-TN3-R 2N60G-TN3-R TO-252 2N60L-TN3-T 2N60G-TN3-T TO-252 2N60L-T2Q-T 2N60G-T2Q-T TO-262 TO-126 2N60L-T60-K 2N60G-T60-K 2N60L-T6C-K 2N60G-T6C-K TO-126C 2N60L-K08-5060-R 2N60G-K08-5060-R DFN-8(5×6) Note , Single Pulsed 2N60 EAS (Note 3) Avalanche Energy 2N60-E 100 mJ Repetitive (Note 2) EAR 4.5 mJ Unisonic Technologies
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Abstract: Plating 2N60-x-TA3-T 2N60L-x-TA3-T TO-220 2N60-x-TF3-T 2N60L-x-TF3-T TO-220F 2N60-x-TM3-T 2N60L-x-TM3-T TO-251 2N60-x-TN3-R 2N60L-x-TN3-R TO-252 2N60-x-TN3-T 2N60L-x-TN3-T TO-252 Note: Pin Assignment: G: Gate D: Drain S: Source 2N60L-x-TA3-T Pin Assignment 1 2 3 G D S G D S G D S , , Starting TJ = 25°C 2N60-A 2N60-B ELECTRICAL CHARACTERISTICS (TJ =25â"ƒ, unless Otherwise specified.) PARAMETER Off Characteristics Drain-Source Breakdown Voltage SYMBOL 2N60-A 2N60-B Zero Gate Unisonic Technologies
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2N60G

Abstract: 2N60 Packing Tube Tube Tube Tube Tube Tape Reel Tube Tube Bulk Ordering Number Lead Free Halogen Free 2N60L-TA3-T 2N60G-TA3-T 2N60L-TF1-T 2N60G-TF1-T 2N60L-TF3-T 2N60G-TF3-T 2N60L-TM3-T 2N60G-TM3-T 2N60L-TMA-T 2N60G-TMA-T 2N60L-TN3-R 2N60G-TN3-R 2N60L-TN3-T 2N60G-TN3-T 2N60L-T2Q-T 2N60G-T2Q-T 2N60L-T60-K 2N60G-T60-K Note , UNISONIC TECHNOLOGIES CO., LTD 2N60 2A, 600V N-CHANNEL POWER MOSFET DESCRIPTION 1 Power MOSFET 1 TO-220 1 TO-220F The UTC 2N60 is a high voltage power MOSFET and is designed to have
Unisonic Technologies
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2N60L TO-220F
Abstract: Number Package Lead Free Halogen Free 2N60L-TA3-T 2N60G-TA3-T TO-220 2N60L-TF1-T 2N60G-TF1-T TO-220F1 2N60L-TF3-T 2N60G-TF3-T TO-220F 2N60L-TM3-T 2N60G-TM3-T TO-251 2N60L-TMA-T 2N60G-TMA-T TO-251L 2N60L-TMS-T 2N60G-TMS-T TO-251S 2N60L-TN3-T 2N60G-TN3-T TO-252 2N60L-TN3-R 2N60G-TN3-R TO-252 2N60L-T2Q-T 2N60G-T2Q-T TO-262 2N60L-T60-K 2N60G-T60-K TO-126 2N60L-T6C-K 2N60G-T6C-K TO-126C 2N60L-K08-5060-R 2N60G-K08-5060-R DFN-8(5×6) Note: Pin Assignment: G: Gate D: Drain S: Source Unisonic Technologies
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QW-R502-974

2n60

Abstract: 2N60 TO-252 2N60 N2 Amps600Volts N-Channel MOSFET Description The ET2N60 N-Ceannel enhancement mode , /ns 44 W BEIJING ESTEK ELECTRONICS CO.,LTD 2N60 Derate above 25 0.44 0.19 0.35 , 2N60 4. Pulse Test : Pulse width 300s, Duty cycle 2% 5. Essentially independent of operating temperature Typical Characteristics 3 BEIJING ESTEK ELECTRONICS CO.,LTD 2N60 Typical , CO.,LTD 2N60 Typical Characteristics (Continued) Figure 11-1. Transient Thermal Response
Estek Electronics
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2N60 TO-252 ISD20A TO252 rthjc to-251 TO-252 2N60 TO220F
Abstract: INFORMATION Ordering Number Package Lead Free Halogen Free 2N60G-AA3-T SOT-223 2N60L-TA3-T 2N60G-TA3-T TO-220 2N60L-TF1-T 2N60G-TF1-T TO-220F1 2N60L-TF3-T 2N60G-TF3-T TO-220F 2N60L-TM3-T 2N60G-TM3-T TO-251 2N60L-TMA-T 2N60G-TMA-T TO-251L 2N60L-TMS-T 2N60G-TMS-T TO-251S 2N60L-TMS2-T 2N60G-TMS2-T TO-251S2 2N60L-TMS4-T 2N60G-TMS4-T TO-251S4 2N60L-TN3-R 2N60G-TN3-R TO-252 2N60L-T2Q-T 2N60G-T2Q-T TO-262 2N60L-T60-K 2N60G-T60-K TO-126 2N60L-T6C-K 2N60G-T6C-K TO-126C 2N60G-K08-5060-R DFN Unisonic Technologies
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2N60F

Abstract: Junction-to-Ambient Junction-to-Case Symbol 62.5 120 112 112 °C/W RJC 2N60P 2N60F 2N60I 2N60D Unit RJA 2N60P 2N60F 2N60I 2N60D Value 2.26 5.56 3.7 3.7 °C/W Note: 1 , /dt (Note 3) Total Power Dissipation 2N60P(TC=25˚C) 2N60F(T C=25˚C) 2N60I/D(TC=25˚C) 2N60P(Derate above 25°C) 2N60F(Derate above 25°C) 2N60I/D(Derate above 25°C) Maximum lead temperature for , 2 3 2N60P TO-220 G D S Tube 2N60F TO-220F G D S Tube 2N60I
Weitron
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2N60I/D 47MAX 75MAX

6075A

Abstract: 6073a UNISONIC TECHNOLOGIES CO., LTD 2N60 Power MOSFET 2A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 2N60 is a high voltage power MOSFET and is designed to have better characteristics , Co., Ltd 1 of 7 QW-R502-053.X 2N60  Power MOSFET ORDERING INFORMATION Ordering , www.unisonic.com.tw 2 of 7 QW-R502-053.X 2N60  Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 , QW-R502-053.X 2N60  Power MOSFET ELECTRICAL CHARACTERISTICS (TJ =25°С, unless otherwise
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OCR Scan
2N6071 2N6075A 6075A 6073a 2N thyristor 2n607 2N6071/D
Abstract: UNISONIC TECHNOLOGIES CO., LTD 2N60-E Power MOSFET 2A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 2N60-E is a high voltage power MOSFET and is designed to have better characteristics , Co., Ltd 1 of 8 QW-R502-974. A 2N60-E  Power MOSFET ORDERING INFORMATION Ordering , QW-R502-974. A 2N60-E  Power MOSFET PIN CONFIGURATION DFN-8(5×6) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 8 QW-R502-974. A 2N60-E  Power MOSFET ABSOLUTE Unisonic Technologies
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2N60L-TF3T-T 2N60G-TF3T-T
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