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2n5088 transistor

Catalog Datasheet MFG & Type PDF Document Tags

2N5088

Abstract: 2N5088 equivalent UTC 2N5088/2N5089 NPN EPITAXIAL SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER DESCRIPTION The , TECHNOLOGIES CO., LTD. 1 QW-R201-040,A UTC 2N5088/2N5089 NPN EPITAXIAL SILICON TRANSISTOR ELECTRICAL , . 3 QW-R201-040,A UTC 2N5088/2N5089 NPN EPITAXIAL SILICON TRANSISTOR UTC UNISONIC TECHNOLOGIES CO., LTD. 4 QW-R201-040,A UTC 2N5088/2N5089 NPN EPITAXIAL SILICON TRANSISTOR UTC , =25°C, unless otherwise noted) RATING SYMBOL 2N5088 2N5089 UNIT Collector-Emitter voltage VCEO
Unisonic Technologies
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2N5088 equivalent 2n5088 transistor 2N5089 equivalent 2N5089 NPN 2N5088/2N5089

2N5088

Abstract: 2N5088G Copyright © 2012 Unisonic Technologies Co., LTD 1 of 3 QW-R201-040.Ba 2N5088/2N5089 PARAMETER SYMBOL 2N5088 2N5089 2N5088 2N5089 NPN EPITAXIAL SILICON TRANSISTOR ABSOLUTE MAXIMUM RATING (TA , UNISONIC TECHNOLOGIES CO., LTD 2N5088/2N5089 NPN GENERAL PURPOSE AMPLIFIER DESCRIPTION 1 NPN EPITAXIAL SILICON TRANSISTOR The devices are designed for low noise, high gain, general purpose amplifier , Ambient Junction to Case ELECTRICAL CHARACTERISTICS (TA=25, unless otherwise noted) SYMBOL 2N5088
Unisonic Technologies
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2N5089L-T92-B 2N5088G 2N5088L-T92-B 2N5088G-T92-B 2N5088L-T92-K 2N5088G-T92-K 2N5088L-T92-R 2N5088G-T92-R

2N5088

Abstract: 2N5089 2N5088/5089 NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR TO-92 · Collector-Emitter Voltage: VCEO= 2N5088: 30V 2N5089: 25V · Collector Dissipation: PC (max)=625mW ) ABSOLUTE , :2N5088 2N5089 :2N5088 2N5089 Emitter-Base Voltage Collector Current Collector Dissipation , ) ELECTRICAL CHARACTERISTICS (TA=25 Characteristic Symbol Collector-Base Breakdown Voltage :2N5088 :2N5089 %Collector-Emitter Breakdown Voltage :2N5088 :2N5089 Collector Cut-off Current :2N4403
Samsung Electronics
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transistor 2N5088 transistor amplifier 5v to 15v 5089 silicon npn transistor 2N4403 NPN Transistor transistor 2n5088 equivalent 5089 npn 2N5088/5089 2N4402 100MH

2N5088 equivalent

Abstract: 2N5089 NPN UTC 2N5088/2N5089 NPN EPITAXIAL SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER DESCRIPTION The , TECHNOLOGIES CO., LTD. 1 QW-R201-040,A UTC 2N5088/2N5089 NPN EPITAXIAL SILICON TRANSISTOR , UTC 2N5088/2N5089 NPN EPITAXIAL SILICON TRANSISTOR TYPICAL CHARACTERISTICS UTC UNISONIC TECHNOLOGIES CO., LTD. 3 QW-R201-040,A UTC 2N5088/2N5089 NPN EPITAXIAL SILICON TRANSISTOR UTC , TRANSISTOR UTC UNISONIC TECHNOLOGIES CO., LTD. 5 QW-R201-040,A UTC 2N5088/2N5089 NPN
Unisonic Technologies
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small signal transistor

2N5088 Cross Reference

Abstract: 50-kV 2N5088 / MMBT5088 / 2N5089 / MMBT5089 2N5088 2N5089 MMBT5088 MMBT5089 C E C B TO-92 E , Emitter-Base Voltage Collector Current - Continuous TA = 25°C unless otherwise noted Parameter 2N5088 2N5089 2N5088 2N5089 Value 30 25 35 30 4.5 100 -55 to +150 Units V V V V V mA °C Operating and , °C unless otherwise noted Characteristic 2N5088 2N5089 625 5.0 83.3 200 Max *MMBT5088 *MMBT5089 350 , -4 PCB 1.6" X 1.6" X 0.06." 2001 Fairchild Semiconductor Corporation 2N5088/2N5089/MMBT5088
Fairchild Semiconductor
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2N5088 Cross Reference 50-kV 2N5089 fairchild 2n5088 application note 2N5088 power 2N5088/2N5089/MMBT5088/MMBT5089 2N5089TA

2N5088 equivalent

Abstract: 2N5088 ST 2N5088 / 2N5089 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to it DC current gain. As complementary type the PNP transistor ST 2N5086 and ST 2N5087 are recommended. On special request, these , Stock Exchange, Stock Code: 724) R Dated : 02/12/2005 ST 2N5088 / 2N5089 Characteristics at Tamb=25 OC Parameter Symbol Min. Typ. Max. Unit ST 2N5088 hFE 300 - 900
Semtech Electronics
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ST transistor 2N5089 power ST 024

2N5088

Abstract: 2N5089 2N5088/5089 NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR â'¢ Collector-Emitter Voltage: VCeo = 2N5088: 30V 2N5089: 25V â'¢ Collector Dissipation: Pc (max)=625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Symbol Rating Unit Collector-Base Voltage 2N5088 VcBO 2N5089 30 V Collector-Emitter Voltage :2N5088 VcEO 30 V 2N5089 25 V Emitter-Base Voltage Vebo 4.5 V , Its Respective Manufacturer 2N5088/5089 NPN EPITAXIAL SILICON TRANSISTOR DC CURRENT GAIN CURRENT
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OCR Scan
100khz 5v transistor npn TRANSISTOR D 471 2N5089 transistor transistor CR NPN 100MA 0D25033 I-100

2N5088

Abstract: en in IDEAL TRANSISTOR Figure 1. Transistor Noise Model http://onsemi.com 89 2N5088 , 2N5088, 2N5089 Amplifier Transistors NPN Silicon Features · Pb-Free Packages are Available* http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Collector - Emitter Voltage 2N5088 2N5089 Collector - Base Voltage 2N5088 2N5089 Emitter - Base Voltage Collector Current - Continuous Total Device , 200 83.3 Unit °C/W °C/W 2N5088 2N5088RLRA 2N5089 2N5089G 2N2089RLRA 2N2089RLRAG 2N2089RLRE
ON Semiconductor
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2000/T

2N5089 equivalent

Abstract: 2N5088 equivalent ST 2N5088 / 2N5089 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to it DC current gain. As complementary type the PNP transistor ST 2N5086 and ST 2N5087 are recommended. On special request, these , , acompany listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 07/12/2002 ST 2N5088 / 2N5089 Characteristics at Tamb=25 oC Symbol Min. Typ. Max. Unit ST 2N5088 hFE 300
Semtech Electronics
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N CHANNEL jfet Low Noise Audio Amplifier

Abstract: transistor fn 1016 circuit identifying the equivalent noise sources en and in found in a JFET (or bipolar transistor). The , . Recommended applications and part types are described in Table 1. en RG D G ­ + This , exception of the 1/f n region), is defined as e n + 4kTR NB (1) where K = 1.38 x 10­23 Joules/_K (Boltzmann's Constant). T = temperature in _K (_K = _C + 273), B = bandwidth in Hz, and RN [ 0.67/gfs, the , thermal noise voltage of the channel resistance. In the so-called 1/fn region, en is expressed as e n +
Temic Semiconductors
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AN106 SST4393 N CHANNEL jfet Low Noise Audio Amplifier transistor fn 1016 siliconix fet JFETs Junction FETs Siliconix AN106 JFET APPLICATIONS U401/U404/ SST404/ SST406
Abstract: 2N5088 2N5089 T - ^ - 2 1 SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N small-signal transistor in , ¡ â  Silicon planar epitaxial transistor , ) 2N5088 2N5089 V T-29-21 Collector , /2N5087. Q UICK REFERENCE D A TA 2N5088 2N5089 Collector-emitter voltage (open base) VcEO , 427 2N5088 2N5089 â  J ttS3131 001750? 1 Tâ'"29â'"21 S5E » N AUER PHILIPS/DISCRETE RATINGS Limiting values in accordance with the Absolute Maximum System (1EC 134) 2N5088 -
OCR Scan
DQ175DI3 2N5086/2N5087 S3131

2N5088

Abstract: 2N5089 ST 2N5088 / 2N5089 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to it DC current gain. As complementary type the PNP transistor ST 2N5086 and ST 2N5087 are recommended. On special request, these , Kong Stock Exchange, Stock Code: 724) Dated : 02/12/2005 ST 2N5088 / 2N5089 Characteristics at Tamb=25 OC Parameter Symbol Min. Typ. Max. Unit ST 2N5088 hFE 300 - 900
Semtech Electronics
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st2n5088 hfe 300

2N5088 equivalent

Abstract: ST transistor ST 2N5088 / 2N5089 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to it DC current gain. As complementary type the PNP transistor ST 2N5086 and ST 2N5087 are recommended. On special request, these , company listed on the Hong Kong Stock Exchange, Stock Code: 724) R Dated : 07/12/2002 ST 2N5088 / 2N5089 Characteristics at Tamb=25 oC Symbol Min. Typ. Max. Unit ST 2N5088 hFE 300
Semtech Electronics
Original

2N2089

Abstract: 2N2089RLRAG 2N5088, 2N5089 Amplifier Transistors NPN Silicon Features · Pb-Free Packages are Available , Value VCEO 2N5088 2N5089 Collector - Base Voltage Vdc 30 25 VCBO 2N5088 2N5089 , , Junction-to-Case Max Unit 2N5088 TO-92 5000 Units/Box RqJA 200 °C/W 2N5088RLRA TO , Brochure, BRD8011/D. Publication Order Number: 2N5088/D 2N5088, 2N5089 ELECTRICAL CHARACTERISTICS , - - - - 50 50 - - 50 100 2N5088 2N5089 300 400 900 1200 (IC = 1.0
ON Semiconductor
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2N2089 2N2089RLREG 2N5088/D

2N5088

Abstract: 2N5088 equivalent ON Semiconductort Amplifier Transistors 2N5088 2N5089 NPN Silicon MAXIMUM RATINGS Rating Symbol 2N5088 2N5089 Unit Collector­Emitter Voltage VCEO 30 25 Vdc , , IE = 0) Collector Cutoff Current (VCB = 20 Vdc, IE = 0) (VCB = 15 Vdc, IE = 0) V(BR)CEO 2N5088 2N5089 Vdc V(BR)CBO 2N5088 2N5089 Vdc ICBO 2N5088 2N5089 Emitter Cutoff Current (VEB , Publication Order Number: 2N5088/D 2N5088 2N5089 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise
ON Semiconductor
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226AA

2N5088

Abstract: transistor 2N5088 2N5088 / MMBT5088 / 2N5089 / MMBT5089 2N5088 2N5089 MMBT5088 MMBT5089 C E C B TO , Emitter-Base Voltage IC Units 100 VCEO Value 2N5088 2N5089 2N5088 2N5089 *These ratings , Thermal Resistance, Junction to Ambient Max Units 2N5088 2N5089 625 5.0 83.3 *MMBT5088 , ." 2001 Fairchild Semiconductor Corporation 2N5088/2N5089/MMBT5088/MMBT5089, Rev A (continued , 2N5088 / MMBT5088 / 2N5089 / MMBT5089 NPN General Purpose Amplifier V SMALL SIGNAL
Fairchild Semiconductor
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CBVK741B019 F63TNR PN2222N 2n5089 spice

2N5088 equivalent

Abstract: siliconix FET AUDIO AMPLIFIER circuit identifying the equivalent noise sources en and in found in a JFET (or bipolar transistor). The , . Recommended applications and part types are described in Table 1. en RG D G ­ + This , the 1/f n region), is defined as en + 4kTR NB (1) where K = 1.38 x 10­23 Joules/_K (Boltzmann's Constant). T = temperature in _K (_K = _C + 273), B = bandwidth in Hz, and RN [ 0.67/gfs, the equivalent , , the equivalent open-circuit input noise current, with the 2 i n + 2 q IGB (3) where q =
Temic Semiconductors
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2N4393 siliconix FET AUDIO AMPLIFIER 2N5088 SIMILAR siliconix FET DESIGN Siliconix "low noise jfet" 2n930 equivalent monolithic amplifier MAR 3 app note ST201/ SST204 PN4393

N CHANNEL jfet Low Noise Audio Amplifier

Abstract: jfet n channel ultra low noise circuit identifying the equivalent noise sources en and in found in a JFET (or bipolar transistor). The , . Recommended applications and part types are described in Table 1. en RG D G ­ + This , the 1/f n region), is defined as en + 4kTR NB (1) where K = 1.38 x 10­23 Joules/_K (Boltzmann's Constant). T = temperature in _K (_K = _C + 273), B = bandwidth in Hz, and RN [ 0.67/gfs, the equivalent , , the equivalent open-circuit input noise current, with the 2 i n + 2 q IGB (3) where q =
Siliconix
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jfet n channel ultra low noise Siliconix JFETs Dual Siliconix JFET Dual transistor equivalent table chart 2N4338 ic for hearing aid

transistor 2n5088 equivalent

Abstract: transistor fn 1016 and in found in a JFET (or bipolar transistor). The ennoise voltage referred to the input is , equivalent short circuit input noise voltage (with the exception of the 1/f n region), is defined as e n + , _C + 273), B = bandwidth in Hz, and RN [ 0.67/gfs, the equivalent resistance for noise. The en , resistance. In the socalled 1/fn region, en is expressed as e n + 4kTR NB (1 ) f 1f n) i n + 2 q I GB , generated by a resistor: in + 4kTB Rp (4) (2) where n varies from 1 to 2 depending upon
Temic Semiconductors
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transistor j201 Siliconix "fet" 2N930 siliconix jfets

2n5088

Abstract: 2N5089 2N5088/5089 AMPLIFIER TRANSISTOR · Collector-Em itter Voltage: V ceo= 2N5088:30V 2N6088: 25V · Collector Dissipation: Pc (max)'=625mW NPN EPITAXIAL SILICON TRANSISTOR TO-92 ABSOLUTE MAXIMUM , Cycle , Collector Current Collector Dissipation Junction Temperature Storage Temperature :2N5088 2N5089 :2N50S8 , haracteristic Collector-Base Breakdown Voltage :2N5088 '.2N5089 *C ollector-Em itter Breakdown Voltage :2N5088
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OCR Scan
2N608 2N50S9
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