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2n5088 transistor

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Abstract: 2N5088/5089 NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR TO-92 · Collector-Emitter Voltage: VCEO= 2N5088: 30V 2N5089 2N5089: 25V · Collector Dissipation: PC (max)=625mW ) ABSOLUTE , :2N5088 2N5089 2N5089 :2N5088 2N5089 2N5089 Emitter-Base Voltage Collector Current Collector Dissipation , ) ELECTRICAL CHARACTERISTICS (TA=25 Characteristic Symbol Collector-Base Breakdown Voltage :2N5088 :2N5089 2N5089 %Collector-Emitter Breakdown Voltage :2N5088 :2N5089 2N5089 Collector Cut-off Current :2N4403 2N4403 ... Original
datasheet

2 pages,
56.88 Kb

2N4403 NPN Transistor transistor 2n5088 equivalent 5089 silicon npn transistor transistor amplifier 5v to 15v 2N5089 equivalent transistor 2N5088 2n5088 transistor 2N5089 2N5088 equivalent 2N5088 2N5088/5089 2N5088/5089 abstract
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Abstract: 2N5088/5089 NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR • Collector-Emitter Voltage: VCeo = 2N5088: 30V 2N5089 2N5089: 25V • Collector Dissipation: Pc (max)=625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Symbol Rating Unit Collector-Base Voltage 2N5088 VcBO 2N5089 2N5089 30 V Collector-Emitter Voltage :2N5088 VcEO 30 V 2N5089 2N5089 25 V Emitter-Base Voltage Vebo 4.5 V Collector Current lc , Its Respective Manufacturer 2N5088/5089 NPN EPITAXIAL SILICON TRANSISTOR DC CURRENT GAIN CURRENT ... OCR Scan
datasheet

2 pages,
81.32 Kb

transistor amplifier 5v to 15v TRANSISTOR D 471 2n5088 transistor 100khz 5v transistor npn 2N5089 2N5088 datasheet abstract
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Abstract: 2N5088/5089 AMPLIFIER TRANSISTOR · Collector-Em itter Voltage: V ceo= 2N5088:30V 2N6088 2N6088: 25V · Collector Dissipation: Pc (max)'=625mW NPN EPITAXIAL SILICON TRANSISTOR TO-92 ABSOLUTE MAXIMUM , Collector Current Collector Dissipation Junction Temperature Storage Temperature :2N5088 2N5089 2N5089 :2N50S8 2N50S8 , haracteristic Collector-Base Breakdown Voltage :2N5088 '.2N5089 2N5089 *C ollector-Em itter Breakdown Voltage :2N5088 :2N50S9 2N50S9 Collector Cut-off Current :2N4403 2N4403 :2N4402 2N4402 Base Cut-off Current *D C Current Gain :2N5088 2N5089 2N5089 ... OCR Scan
datasheet

2 pages,
92.15 Kb

2n6088 2N5089 2n5088 transistor transistor 2N5088 2n5088 2N5088/5089 2N5088 2N6088 2N5088/5089 abstract
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Abstract: UTC 2N5088/2N5089 NPN EPITAXIAL SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER DESCRIPTION The , TECHNOLOGIES CO., LTD. 1 QW-R201-040 QW-R201-040,A UTC 2N5088/2N5089 NPN EPITAXIAL SILICON TRANSISTOR ELECTRICAL , , LTD. 3 QW-R201-040 QW-R201-040,A UTC 2N5088/2N5089 NPN EPITAXIAL SILICON TRANSISTOR UTC UNISONIC TECHNOLOGIES CO., LTD. 4 QW-R201-040 QW-R201-040,A UTC 2N5088/2N5089 NPN EPITAXIAL SILICON TRANSISTOR UTC , , unless otherwise noted) RATING SYMBOL 2N5088 2N5089 2N5089 UNIT Collector-Emitter voltage VCEO ... Original
datasheet

6 pages,
184.59 Kb

2N5089 NPN 2N5089 equivalent 2n5088 transistor 2N5089 2N5088 2N5088 equivalent 2N5088/2N5089 2N5088/2N5089 abstract
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Abstract: UTC 2N5088/2N5089 NPN EPITAXIAL SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER DESCRIPTION The , TECHNOLOGIES CO., LTD. 1 QW-R201-040 QW-R201-040,A UTC 2N5088/2N5089 NPN EPITAXIAL SILICON TRANSISTOR , 3 QW-R201-040 QW-R201-040,A UTC 2N5088/2N5089 NPN EPITAXIAL SILICON TRANSISTOR UTC UNISONIC TECHNOLOGIES CO., LTD. 4 QW-R201-040 QW-R201-040,A UTC 2N5088/2N5089 NPN EPITAXIAL SILICON TRANSISTOR UTC , , unless otherwise noted) RATING SYMBOL 2N5088 2N5089 2N5089 UNIT Collector-Emitter voltage VCEO ... Original
datasheet

6 pages,
297.83 Kb

small signal transistor 2N5088 2N5089 equivalent 2N5089 2n5088 transistor 2N5089 NPN 2N5088 equivalent 2N5088/2N5089 2N5088/2N5089 abstract
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Abstract: ST 2N5088 / 2N5089 2N5089 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to it DC current gain. As complementary type the PNP transistor ST 2N5086 2N5086 and ST 2N5087 2N5087 are recommended. On special request, these , Kong Stock Exchange, Stock Code: 724) Dated : 02/12/2005 ST 2N5088 / 2N5089 2N5089 Characteristics at Tamb=25 OC Parameter Symbol Min. Typ. Max. Unit ST 2N5088 hFE 300 - 900 ... Original
datasheet

5 pages,
347.46 Kb

2N5087 2N5088 power 2n5088 transistor hfe 300 ST 024 2N5086 2N5089 2N5088 equivalent 2N5088 2N5088 abstract
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Abstract: ST 2N5088 / 2N5089 2N5089 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to it DC current gain. As complementary type the PNP transistor ST 2N5086 2N5086 and ST 2N5087 2N5087 are recommended. On special request, these , Stock Exchange, Stock Code: 724) R Dated : 02/12/2005 ST 2N5088 / 2N5089 2N5089 Characteristics at Tamb=25 OC Parameter Symbol Min. Typ. Max. Unit ST 2N5088 hFE 300 - 900 ... Original
datasheet

5 pages,
378.49 Kb

ST 024 2N5089 equivalent 2N5086 transistor 2n5088 equivalent transistor 2N5088 2N5089 NPN 2N5089 power 2N5089 ST transistor 2N5087 2N5088 2n5088 transistor 2N5088 equivalent 2N5088 abstract
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Abstract: Copyright © 2012 Unisonic Technologies Co., LTD 1 of 3 QW-R201-040 QW-R201-040.Ba 2N5088/2N5089 PARAMETER SYMBOL 2N5088 2N5089 2N5089 2N5088 2N5089 2N5089 NPN EPITAXIAL SILICON TRANSISTOR ABSOLUTE MAXIMUM RATING (TA=25 , UNISONIC TECHNOLOGIES CO., LTD 2N5088/2N5089 NPN GENERAL PURPOSE AMPLIFIER DESCRIPTION 1 NPN EPITAXIAL SILICON TRANSISTOR The devices are designed for low noise, high gain, general purpose amplifier , Ambient Junction to Case ELECTRICAL CHARACTERISTICS (TA=25, unless otherwise noted) SYMBOL 2N5088 ... Original
datasheet

3 pages,
87.18 Kb

2N5088 2N5088/2N5089 2N5088/2N5089 abstract
datasheet frame
Abstract: and in found in a JFET (or bipolar transistor). The ennoise voltage referred to the input is , equivalent short circuit input noise voltage (with the exception of the 1/f n region), is defined as e n + , _C + 273), B = bandwidth in Hz, and RN [ 0.67/gfs, the equivalent resistance for noise. The en , resistance. In the socalled 1/fn region, en is expressed as e n + 4kTR NB (1 ) f 1f n) i n + 2 q I GB , generated by a resistor: in + 4kTB Rp (4) (2) where n varies from 1 to 2 depending upon ... Original
datasheet

5 pages,
98.33 Kb

transistor j201 2n5088 transistor 2N930 AN106 PN4393 Siliconix "fet" 2N4393 siliconix jfets SST4393 transistor equivalent table chart 2N5088 SIMILAR siliconix fet Siliconix "low noise jfet" AN106 abstract
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Abstract: circuit identifying the equivalent noise sources en and in found in a JFET (or bipolar transistor). The , Recommended applications and part types are described in Table 1. en RG D G ­ + This , the 1/f n region), is defined as en + 4kTR NB (1) where K = 1.38 x 10­23 Joules/_K (Boltzmann's Constant). T = temperature in _K (_K = _C + 273), B = bandwidth in Hz, and RN [ 0.67/gfs, the equivalent , , the equivalent open-circuit input noise current, with the 2 i n + 2 q IGB (3) where q = ... Original
datasheet

5 pages,
71.21 Kb

SST4393 transistor 2F to-236 SST404 2n5088 transistor transistor equivalent table chart 2N4393 Siliconix JFETs Dual monolithic amplifier MAR 3 app note transistor pn4393 2n930 equivalent siliconix FET AUDIO AMPLIFIER Siliconix "low noise jfet" transistor FN 1016 AN106 AN106 abstract
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* Power Discrete BJT Electrical Circuit Model * * Product: 2N5088 * Package: TO-92 * Low Noise Transistor .MODEL 2N5088 npn + IS = 3.80189E-14 80189E-14 80189E-14 80189E-14 BF = 405.19 NF = 1 + BR = 16.246 NR = 1 ISE = 2.51189E-14 51189E-14 51189E-14 51189E-14 + NE = 2 ISC = 9.84993E-12 84993E-12 84993E-12 84993E-12 NC = 1.5 + VAF = 219.367 VAR = 10.6729 IKF = 0.40519 + IKR = 0.020893 RB = 898
www.datasheetarchive.com/files/fairchild/simulation-models/2n5088.lib
Fairchild 22/10/2012 0.99 Kb LIB 2n5088.lib
CJE=7.5P MJE=.2861 + VJE=.75 TR=10.1N TF=467.8P ITF=.17 VTF=5 XTF=8 RB=10) *2N5088 Spice Model p.5-103 in * National Discrete Diode, Bipolar Transistor, * and JFET Products Databook, 1996 PN2222A/NS PN2222A/NS PN2222A/NS PN2222A/NS NPN (IS=14.34F XTI=3 EG=1.11 VAF=74.03 BF=255.9 + NE=1.307 ISE=14.34F IKF=.2847 XTB=1.5 BR=6.092 NC=2 ISC=0 IKR=0 + RC=1 CJC=7.306P MJC=.3416 VJC=.75 FC=.5 CJE=22.01P MJE=.377 + VJE=.75 Switching pkg:TO-92B 1,2,3 .MODEL PN2369A/NS PN2369A/NS PN2369A/NS PN2369A/NS NPN (IS=44.14f XTI=3 EG=1.11 VAF=100 BF=78.32 + NE=1.389
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Spice Models 21/02/2008 7.84 Kb LIB nsbjt.lib
* *SRC=2N5088;QN5088 QN5088 QN5088 QN5088;BJTs NPN;Amplifier;30V 50mA .MODEL QN5088 QN5088 QN5088 QN5088 NPN (IS=21.0P NF=1 BF=780 VAF=98.5 IKF=30M + MJC=.102 + VJC=.82 CJC=3.02P TF=457P TR=3.17N) * Motorola 15 Volt .2 Amp 400 MHz SiNPN Transistor MJC=.102 + VJC=.82 CJC=3.02P TF=318P TR=2.97N) * Motorola 20 Volt .2 Amp 500 MHz SiNPN Transistor + TR=27E-9 27E-9 27E-9 27E-9 * ZETEX Transistor 06-19-1993 * *SRC=BC107BP BC107BP BC107BP BC107BP;BC107BP BC107BP BC107BP BC107BP;BJTs NPN;Zetex; .MODEL ISE=2.35P NE=2 + BR=4 NR=1 VAR=28 IKR=.525 RE=.315 RB=1.26 RC=.126 XTB=1.5 + CJE=13.5P VJE=1.1 MJE=.5
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Spice Models 18/04/2010 92.14 Kb LIB bjtn.lib
purpose transistor 1997-03-25 2N5087 2N5087 2N5087 2N5087 PNP general purpose transistor 1997-07-02 2N5088 NPN general 1N5225B 1N5225B 1N5225B 1N5225B to 1N5267B 1N5267B 1N5267B 1N5267B Voltage regulator diodes 1996-04-26 2N1613 2N1613 2N1613 2N1613 NPN medium power transistor 1997-04-11 2N1711 2N1711 2N1711 2N1711 NPN medium power transistor 1997-05-28 2N1893 2N1893 2N1893 2N1893 NPN medium power transistor 1997-04-17 2N2219 2N2219 2N2219 2N2219 2N2369 2N2369 2N2369 2N2369 NPN switching transistor 1997-06-20 2N2484 2N2484 2N2484 2N2484 NPN general purpose transistor 1997-05-01 2N2905 2N2905 2N2905 2N2905 2N2907 2N2907 2N2907 2N2907; 2N2907A 2N2907A 2N2907A 2N2907A PNP switching transistors 1997-05-30 2N3019 2N3019 2N3019 2N3019 NPN medium power transistor 1997-06-19
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Philips 16/06/2005 481.52 Kb HTML prunedlist-v2.html
VAF=35 ISE=2.6 NE=1.46 CJE=1E-13 1E-13 1E-13 1E-13 + MJE=0.333 TF=6E-11 6E-11 6E-11 6E-11 CJC=1E-13 1E-13 1E-13 1E-13 CJS=2.2E-13 2E-13 2E-13 2E-13 MJS=0.5 FC=0.67 RE=0.383 RC=0.153 CJE=2.41E-11 41E-11 41E-11 41E-11 + VJE=1.1 MJE=0.5 TF=4.54E-10 54E-10 54E-10 54E-10 CJC=2.02E-11 02E-11 02E-11 02E-11 VJC=0.3 MJC=0.3 TR=3.15E-7 15E-7 15E-7 15E-7 + VAF=113 IKF=0.5 ISE=1.06E-11 06E-11 06E-11 06E-11 + NE=2 BR=4 VAR=24 IKR=0.225 RB=1.37 RE=0.343 RC=0.137 CJE=2.95E-11 95E-11 95E-11 95E-11 + ,1 .MODEL 2N2369A 2N2369A 2N2369A 2N2369A NPN (IS=11.2F NF=1 BF=130 VAF=69.7 IKF=57M ISE=8.01P NE=2 + BR=4 NR=1 VAR=18 IKR=85.5M RE=2.06 RB=8.26 RC=.826 XTB=1.5 + CJE=3.17P VJE=1.1 MJE=.5 CJC=5.91P VJC=.3 MJC=.3 TF=265P
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Spice Models 17/09/2010 51.12 Kb LIB mcebjt.lib
MPS4124/D MPS4124/D MPS4124/D MPS4124/D (48.0kB) 4 100 Amplifier Transistor NPN 2N5088/D 12 V, 1.0 A, Low V CE(sat) PNP Transistor SOT723 NSS12100M3/D NSS12100M3/D NSS12100M3/D NSS12100M3/D (82.0kB) 0 100 12 V, 4.0 A, Low V CE(sat) NPN High Current Transistor SOT-23 Transistor WDFN3 NSS12501UW3/D NSS12501UW3/D NSS12501UW3/D NSS12501UW3/D (82.0kB) 2 100 12 V, 8.0 A, Low V CE(sat) NPN High Current Transistor ChipFET™ NSS12601CF8/D NSS12601CF8/D NSS12601CF8/D NSS12601CF8/D (83.0kB) 1 100
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On Semiconductor 28/09/2007 122.37 Kb HTM bipolartransistors.htm
transistor, Q 4 , to operate at near constant current which improves the linearity of the driver stage. The Transistor Q 3 and resistors R 11 , R 12 , R 13 provide gate-source offset voltage for the output the bipolar transistor, Q 3 , emitter base voltage and the combined threshold voltages of the HEXFET 15K W R 11 10K W C 3 47 m F 40V Q 3 , Q 4 , 2N4410 2N4410 2N4410 2N4410, 2N5088 mH aircored Table 1. Components List The class A driver transistor, Q 4
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International Rectifier 20/08/1999 17.96 Kb HTM wcd011a6.htm
transistor, Q 4 , to operate at near constant current which improves the linearity of the driver stage. The Transistor Q 3 and resistors R 11 , R 12 , R 13 provide gate-source offset voltage for the output the bipolar transistor, Q 3 , emitter base voltage and the combined threshold voltages of the HEXFET 15K W R 11 10K W C 3 47 m F 40V Q 3 , Q 4 , 2N4410 2N4410 2N4410 2N4410, 2N5088 R 4 mH aircored Table 1. Components List The class A driver transistor, Q 4
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International Rectifier 06/10/1998 17.99 Kb HTM wcd00c22.htm
(2-7-97 ) 2N5088: NPN general purpose transistor (3-9-97 ) 2N5415 2N5415 2N5415 2N5415 to 1N5267B 1N5267B 1N5267B 1N5267B: Voltage regulator diodes (26-4-96 ) 2N1613 2N1613 2N1613 2N1613: NPN medium power transistor (11-4-97 ) 2N1711 2N1711 2N1711 2N1711: NPN medium power transistor (28-5-97 ) 2N1893 2N1893 2N1893 2N1893: NPN medium power transistor (17-4-97 ) 2N2219 2N2219 2N2219 2N2219; 2N2219A 2N2219A 2N2219A 2N2219A: NPN switching transistors (3-9-97 ) 2N2222 2N2222 2N2222 2N2222; 2N2222A 2N2222A 2N2222A 2N2222A: NPN switching transistors (29-5-97 ) 2N2369 2N2369 2N2369 2N2369: NPN switching transistor
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Philips 14/02/2002 372.71 Kb HTML prunedlist-v1.html
) 2N5087 2N5087 2N5087 2N5087: PNP general purpose transistor (2/7/97 ) 2N5088: NPN general purpose transistor ) 2N1613 2N1613 2N1613 2N1613: NPN medium power transistor (11/4/97 ) 2N1711 2N1711 2N1711 2N1711: NPN medium power transistor (5/28/97 ) 2N1893 2N1893 2N1893 2N1893: NPN medium power transistor (4/17/97 ) 2N2219 2N2219 2N2219 2N2219; 2N2219A 2N2219A 2N2219A 2N2219A /97 ) 2N2369 2N2369 2N2369 2N2369: NPN switching transistor (6/20/97 ) 2N2484 2N2484 2N2484 2N2484: NPN general purpose transistor (1/5/97 ) 2N2905 2N2905 2N2905 2N2905; 2N2905A 2N2905A 2N2905A 2N2905A: PNP switching transistors (5/28/97
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