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2N5088 Central Semiconductor Corp Small Signal Bipolar Transistor, 0.05A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO-92, 3 PIN visit Digikey
2N5088 LEAD FREE Central Semiconductor Corp TRANS NPN 30V 0.05A TO-92 visit Digikey
2N3810L Microsemi Corporation Transistor visit Digikey
2N2904AL Microsemi Corporation Transistor visit Digikey
2N3499L Microsemi Corporation Transistor visit Digikey
2N2222AUA Microsemi Corporation Transistor visit Digikey

2n5088 transistor

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: UTC 2N5088/2N5089 NPN EPITAXIAL SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER DESCRIPTION The , TECHNOLOGIES CO., LTD. 1 QW-R201-040,A UTC 2N5088/2N5089 NPN EPITAXIAL SILICON TRANSISTOR ELECTRICAL , . 3 QW-R201-040,A UTC 2N5088/2N5089 NPN EPITAXIAL SILICON TRANSISTOR UTC UNISONIC TECHNOLOGIES CO., LTD. 4 QW-R201-040,A UTC 2N5088/2N5089 NPN EPITAXIAL SILICON TRANSISTOR UTC , =25°C, unless otherwise noted) RATING SYMBOL 2N5088 2N5089 UNIT Collector-Emitter voltage VCEO Unisonic Technologies
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2N5088 equivalent 2n5088 transistor 2N5089 equivalent 2N5089 NPN 2N5088/2N5089
Abstract: Copyright © 2012 Unisonic Technologies Co., LTD 1 of 3 QW-R201-040.Ba 2N5088/2N5089 PARAMETER SYMBOL 2N5088 2N5089 2N5088 2N5089 NPN EPITAXIAL SILICON TRANSISTOR ABSOLUTE MAXIMUM RATING (TA , UNISONIC TECHNOLOGIES CO., LTD 2N5088/2N5089 NPN GENERAL PURPOSE AMPLIFIER DESCRIPTION 1 NPN EPITAXIAL SILICON TRANSISTOR The devices are designed for low noise, high gain, general purpose amplifier , Ambient Junction to Case ELECTRICAL CHARACTERISTICS (TA=25, unless otherwise noted) SYMBOL 2N5088 Unisonic Technologies
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2N5089L-T92-B 2N5088G 2N5088L-T92-B 2N5088G-T92-B 2N5088L-T92-K 2N5088G-T92-K 2N5088L-T92-R 2N5088G-T92-R
Abstract: 2N5088/5089 NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR TO-92 · Collector-Emitter Voltage: VCEO= 2N5088: 30V 2N5089: 25V · Collector Dissipation: PC (max)=625mW ) ABSOLUTE , :2N5088 2N5089 :2N5088 2N5089 Emitter-Base Voltage Collector Current Collector Dissipation , ) ELECTRICAL CHARACTERISTICS (TA=25 Characteristic Symbol Collector-Base Breakdown Voltage :2N5088 :2N5089 %Collector-Emitter Breakdown Voltage :2N5088 :2N5089 Collector Cut-off Current :2N4403 Samsung Electronics
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transistor 2N5088 transistor amplifier 5v to 15v 5089 silicon npn transistor 5089 npn transistor 2n5088 equivalent 2N4403 NPN Transistor 2N5088/5089 2N4402 100MH
Abstract: UTC 2N5088/2N5089 NPN EPITAXIAL SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER DESCRIPTION The , TECHNOLOGIES CO., LTD. 1 QW-R201-040,A UTC 2N5088/2N5089 NPN EPITAXIAL SILICON TRANSISTOR , UTC 2N5088/2N5089 NPN EPITAXIAL SILICON TRANSISTOR TYPICAL CHARACTERISTICS UTC UNISONIC TECHNOLOGIES CO., LTD. 3 QW-R201-040,A UTC 2N5088/2N5089 NPN EPITAXIAL SILICON TRANSISTOR UTC , TRANSISTOR UTC UNISONIC TECHNOLOGIES CO., LTD. 5 QW-R201-040,A UTC 2N5088/2N5089 NPN Unisonic Technologies
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small signal transistor
Abstract: 2N5088 / MMBT5088 / 2N5089 / MMBT5089 2N5088 2N5089 MMBT5088 MMBT5089 C E C B TO-92 E , Emitter-Base Voltage Collector Current - Continuous TA = 25°C unless otherwise noted Parameter 2N5088 2N5089 2N5088 2N5089 Value 30 25 35 30 4.5 100 -55 to +150 Units V V V V V mA °C Operating and , °C unless otherwise noted Characteristic 2N5088 2N5089 625 5.0 83.3 200 Max *MMBT5088 *MMBT5089 350 , -4 PCB 1.6" X 1.6" X 0.06." 2001 Fairchild Semiconductor Corporation 2N5088/2N5089/MMBT5088 Fairchild Semiconductor
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2N5088 Cross Reference 2n5088 application note 2N5088 power 2N5089 fairchild 50-kV 2N5088/2N5089/MMBT5088/MMBT5089 2N5089TA
Abstract: ST 2N5088 / 2N5089 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to it DC current gain. As complementary type the PNP transistor ST 2N5086 and ST 2N5087 are recommended. On special request, these , Stock Exchange, Stock Code: 724) R Dated : 02/12/2005 ST 2N5088 / 2N5089 Characteristics at Tamb=25 OC Parameter Symbol Min. Typ. Max. Unit ST 2N5088 hFE 300 - 900 Semtech Electronics
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ST transistor ST 024 2N5089 power
Abstract: 2N5088/5089 NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR â'¢ Collector-Emitter Voltage: VCeo = 2N5088: 30V 2N5089: 25V â'¢ Collector Dissipation: Pc (max)=625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Symbol Rating Unit Collector-Base Voltage 2N5088 VcBO 2N5089 30 V Collector-Emitter Voltage :2N5088 VcEO 30 V 2N5089 25 V Emitter-Base Voltage Vebo 4.5 V , Its Respective Manufacturer 2N5088/5089 NPN EPITAXIAL SILICON TRANSISTOR DC CURRENT GAIN CURRENT -
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100khz 5v transistor npn TRANSISTOR D 471 2N5089 transistor transistor CR NPN 100MA 0D25033 I-100
Abstract: en in IDEAL TRANSISTOR Figure 1. Transistor Noise Model http://onsemi.com 89 2N5088 , 2N5088, 2N5089 Amplifier Transistors NPN Silicon Features · Pb-Free Packages are Available* http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Collector - Emitter Voltage 2N5088 2N5089 Collector - Base Voltage 2N5088 2N5089 Emitter - Base Voltage Collector Current - Continuous Total Device , 200 83.3 Unit °C/W °C/W 2N5088 2N5088RLRA 2N5089 2N5089G 2N2089RLRA 2N2089RLRAG 2N2089RLRE ON Semiconductor
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2000/T
Abstract: ST 2N5088 / 2N5089 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to it DC current gain. As complementary type the PNP transistor ST 2N5086 and ST 2N5087 are recommended. On special request, these , , acompany listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 07/12/2002 ST 2N5088 / 2N5089 Characteristics at Tamb=25 oC Symbol Min. Typ. Max. Unit ST 2N5088 hFE 300 Semtech Electronics
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Abstract: circuit identifying the equivalent noise sources en and in found in a JFET (or bipolar transistor). The , . Recommended applications and part types are described in Table 1. en RG D G ­ + This , exception of the 1/f n region), is defined as e n + 4kTR NB (1) where K = 1.38 x 10­23 Joules/_K (Boltzmann's Constant). T = temperature in _K (_K = _C + 273), B = bandwidth in Hz, and RN [ 0.67/gfs, the , thermal noise voltage of the channel resistance. In the so-called 1/fn region, en is expressed as e n + Temic Semiconductors
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transistor fn 1016 siliconix fet Siliconix AN106 JFETs Junction FETs jfets JFET APPLICATIONS AN106 SST4393 U401/U404/ SST404/ SST406
Abstract: 2N5088 2N5089 T - ^ - 2 1 SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N small-signal transistor in , ¡ â  Silicon planar epitaxial transistor , ) 2N5088 2N5089 V T-29-21 Collector , /2N5087. Q UICK REFERENCE D A TA 2N5088 2N5089 Collector-emitter voltage (open base) VcEO , 427 2N5088 2N5089 â  J ttS3131 001750? 1 Tâ'"29â'"21 S5E » N AUER PHILIPS/DISCRETE RATINGS Limiting values in accordance with the Absolute Maximum System (1EC 134) 2N5088 -
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DQ175DI3 2N5086/2N5087 S3131
Abstract: ST 2N5088 / 2N5089 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to it DC current gain. As complementary type the PNP transistor ST 2N5086 and ST 2N5087 are recommended. On special request, these , Kong Stock Exchange, Stock Code: 724) Dated : 02/12/2005 ST 2N5088 / 2N5089 Characteristics at Tamb=25 OC Parameter Symbol Min. Typ. Max. Unit ST 2N5088 hFE 300 - 900 Semtech Electronics
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hfe 300 st2n5088
Abstract: ST 2N5088 / 2N5089 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to it DC current gain. As complementary type the PNP transistor ST 2N5086 and ST 2N5087 are recommended. On special request, these , company listed on the Hong Kong Stock Exchange, Stock Code: 724) R Dated : 07/12/2002 ST 2N5088 / 2N5089 Characteristics at Tamb=25 oC Symbol Min. Typ. Max. Unit ST 2N5088 hFE 300 Semtech Electronics
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Abstract: 2N5088, 2N5089 Amplifier Transistors NPN Silicon Features · Pb-Free Packages are Available , Value VCEO 2N5088 2N5089 Collector - Base Voltage Vdc 30 25 VCBO 2N5088 2N5089 , , Junction-to-Case Max Unit 2N5088 TO-92 5000 Units/Box RqJA 200 °C/W 2N5088RLRA TO , Brochure, BRD8011/D. Publication Order Number: 2N5088/D 2N5088, 2N5089 ELECTRICAL CHARACTERISTICS , - - - - 50 50 - - 50 100 2N5088 2N5089 300 400 900 1200 (IC = 1.0 ON Semiconductor
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2N2089 2N2089RLREG 2N5088/D
Abstract: ON Semiconductort Amplifier Transistors 2N5088 2N5089 NPN Silicon MAXIMUM RATINGS Rating Symbol 2N5088 2N5089 Unit Collector­Emitter Voltage VCEO 30 25 Vdc , , IE = 0) Collector Cutoff Current (VCB = 20 Vdc, IE = 0) (VCB = 15 Vdc, IE = 0) V(BR)CEO 2N5088 2N5089 Vdc V(BR)CBO 2N5088 2N5089 Vdc ICBO 2N5088 2N5089 Emitter Cutoff Current (VEB , Publication Order Number: 2N5088/D 2N5088 2N5089 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise ON Semiconductor
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226AA
Abstract: 2N5088 / MMBT5088 / 2N5089 / MMBT5089 2N5088 2N5089 MMBT5088 MMBT5089 C E C B TO , Emitter-Base Voltage IC Units 100 VCEO Value 2N5088 2N5089 2N5088 2N5089 *These ratings , Thermal Resistance, Junction to Ambient Max Units 2N5088 2N5089 625 5.0 83.3 *MMBT5088 , ." 2001 Fairchild Semiconductor Corporation 2N5088/2N5089/MMBT5088/MMBT5089, Rev A (continued , 2N5088 / MMBT5088 / 2N5089 / MMBT5089 NPN General Purpose Amplifier V SMALL SIGNAL Fairchild Semiconductor
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PN2222N F63TNR CBVK741B019 2n5089 spice
Abstract: circuit identifying the equivalent noise sources en and in found in a JFET (or bipolar transistor). The , . Recommended applications and part types are described in Table 1. en RG D G ­ + This , the 1/f n region), is defined as en + 4kTR NB (1) where K = 1.38 x 10­23 Joules/_K (Boltzmann's Constant). T = temperature in _K (_K = _C + 273), B = bandwidth in Hz, and RN [ 0.67/gfs, the equivalent , , the equivalent open-circuit input noise current, with the 2 i n + 2 q IGB (3) where q = Temic Semiconductors
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siliconix FET AUDIO AMPLIFIER 2N5088 SIMILAR siliconix FET DESIGN Siliconix "low noise jfet" monolithic amplifier MAR 3 app note 2n930 equivalent ST201/ SST204 2N4393 PN4393
Abstract: circuit identifying the equivalent noise sources en and in found in a JFET (or bipolar transistor). The , . Recommended applications and part types are described in Table 1. en RG D G ­ + This , the 1/f n region), is defined as en + 4kTR NB (1) where K = 1.38 x 10­23 Joules/_K (Boltzmann's Constant). T = temperature in _K (_K = _C + 273), B = bandwidth in Hz, and RN [ 0.67/gfs, the equivalent , , the equivalent open-circuit input noise current, with the 2 i n + 2 q IGB (3) where q = Siliconix
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jfet n channel ultra low noise Siliconix JFETs Dual Siliconix JFET Dual transistor equivalent table chart 2N4338 SST404
Abstract: and in found in a JFET (or bipolar transistor). The ennoise voltage referred to the input is , equivalent short circuit input noise voltage (with the exception of the 1/f n region), is defined as e n + , _C + 273), B = bandwidth in Hz, and RN [ 0.67/gfs, the equivalent resistance for noise. The en , resistance. In the socalled 1/fn region, en is expressed as e n + 4kTR NB (1 ) f 1f n) i n + 2 q I GB , generated by a resistor: in + 4kTB Rp (4) (2) where n varies from 1 to 2 depending upon Temic Semiconductors
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transistor j201 siliconix jfets Siliconix "fet" 2N930
Abstract: 2N5088/5089 AMPLIFIER TRANSISTOR · Collector-Em itter Voltage: V ceo= 2N5088:30V 2N6088: 25V · Collector Dissipation: Pc (max)'=625mW NPN EPITAXIAL SILICON TRANSISTOR TO-92 ABSOLUTE MAXIMUM , Cycle , Collector Current Collector Dissipation Junction Temperature Storage Temperature :2N5088 2N5089 :2N50S8 , haracteristic Collector-Base Breakdown Voltage :2N5088 '.2N5089 *C ollector-Em itter Breakdown Voltage :2N5088 -
OCR Scan
2N608 2N50S9
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