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| Catalog Datasheet Results | Type | Document Tags |
| Abstract: 2N5088/5089 NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR TO-92 · Collector-Emitter Voltage: VCEO= 2N5088: 30V 2N5089 2N5089: 25V · Collector Dissipation: PC (max)=625mW ) ABSOLUTE , :2N5088 2N5089 2N5089 :2N5088 2N5089 2N5089 Emitter-Base Voltage Collector Current Collector Dissipation , ) ELECTRICAL CHARACTERISTICS (TA=25 Characteristic Symbol Collector-Base Breakdown Voltage :2N5088 :2N5089 2N5089 %Collector-Emitter Breakdown Voltage :2N5088 :2N5089 2N5089 Collector Cut-off Current :2N4403 2N4403 ... | Original |
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2N4403 NPN Transistor transistor 2n5088 equivalent 2N5089 5089 silicon npn transistor transistor amplifier 5v to 15v 2N5088 transistor 2N5088 2N5089 equivalent 2n5088 transistor 2N5088 equivalent 2N5088/5089 2N5088/5089 abstract |
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| Abstract: 2N5088/5089 NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR • Collector-Emitter Voltage: VCeo = 2N5088: 30V 2N5089 2N5089: 25V • Collector Dissipation: Pc (max)=625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Symbol Rating Unit Collector-Base Voltage 2N5088 VcBO 2N5089 2N5089 30 V Collector-Emitter Voltage :2N5088 VcEO 30 V 2N5089 2N5089 25 V Emitter-Base Voltage Vebo 4.5 V Collector Current lc , Its Respective Manufacturer 2N5088/5089 NPN EPITAXIAL SILICON TRANSISTOR DC CURRENT GAIN CURRENT ... | OCR Scan |
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2N5089 2N5088 TRANSISTOR D 471 2n5088 transistor 2N5088/5089 2N5088/5089 abstract |
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| Abstract: UTC 2N5088/2N5089 NPN EPITAXIAL SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER DESCRIPTION The , TECHNOLOGIES CO., LTD. 1 QW-R201-040 QW-R201-040,A UTC 2N5088/2N5089 NPN EPITAXIAL SILICON TRANSISTOR , 3 QW-R201-040 QW-R201-040,A UTC 2N5088/2N5089 NPN EPITAXIAL SILICON TRANSISTOR UTC UNISONIC TECHNOLOGIES CO., LTD. 4 QW-R201-040 QW-R201-040,A UTC 2N5088/2N5089 NPN EPITAXIAL SILICON TRANSISTOR UTC , , unless otherwise noted) RATING SYMBOL 2N5088 2N5089 2N5089 UNIT Collector-Emitter voltage VCEO ... | Original |
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small signal transistor 2N5089 2N5088 2N5089 equivalent 2n5088 transistor 2N5089 NPN 2N5088 equivalent 2N5088/2N5089 2N5088/2N5089 abstract |
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| Abstract: UTC 2N5088/2N5089 NPN EPITAXIAL SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER DESCRIPTION The , TECHNOLOGIES CO., LTD. 1 QW-R201-040 QW-R201-040,A UTC 2N5088/2N5089 NPN EPITAXIAL SILICON TRANSISTOR ELECTRICAL , , LTD. 3 QW-R201-040 QW-R201-040,A UTC 2N5088/2N5089 NPN EPITAXIAL SILICON TRANSISTOR UTC UNISONIC TECHNOLOGIES CO., LTD. 4 QW-R201-040 QW-R201-040,A UTC 2N5088/2N5089 NPN EPITAXIAL SILICON TRANSISTOR UTC , , unless otherwise noted) RATING SYMBOL 2N5088 2N5089 2N5089 UNIT Collector-Emitter voltage VCEO ... | Original |
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2N5089 NPN 2N5089 equivalent 2N5089 2n5088 transistor 2N5088 2N5088 equivalent 2N5088/2N5089 2N5088/2N5089 abstract |
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| Abstract: ST 2N5088 / 2N5089 2N5089 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to it DC current gain. As complementary type the PNP transistor ST 2N5086 2N5086 and ST 2N5087 2N5087 are recommended. On special request, these , Kong Stock Exchange, Stock Code: 724) Dated : 02/12/2005 ST 2N5088 / 2N5089 2N5089 Characteristics at Tamb=25 OC Parameter Symbol Min. Typ. Max. Unit ST 2N5088 hFE 300 - 900 ... | Original |
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ST 024 2N5089 2n5088 transistor 2N5088 2N5087 2N5086 2N5088 equivalent 2N5088 abstract |
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| Abstract: ST 2N5088 / 2N5089 2N5089 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to it DC current gain. As complementary type the PNP transistor ST 2N5086 2N5086 and ST 2N5087 2N5087 are recommended. On special request, these , Stock Exchange, Stock Code: 724) R Dated : 02/12/2005 ST 2N5088 / 2N5089 2N5089 Characteristics at Tamb=25 OC Parameter Symbol Min. Typ. Max. Unit ST 2N5088 hFE 300 - 900 ... | Original |
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transistor 2n5088 equivalent 2N5088 2N5089 equivalent 2N5089 NPN 2N5089 power ST 024 transistor 2N5088 2N5086 ST transistor 2N5089 2N5087 2n5088 transistor 2N5088 equivalent 2N5088 abstract |
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| Abstract: circuit identifying the equivalent noise sources en and in found in a JFET (or bipolar transistor). The , Recommended applications and part types are described in Table 1. en RG D G + This , the 1/f n region), is defined as en + 4kTR NB (1) where K = 1.38 x 1023 Joules/_K (Boltzmann's Constant). T = temperature in _K (_K = _C + 273), B = bandwidth in Hz, and RN [ 0.67/gfs, the equivalent , , the equivalent open-circuit input noise current, with the 2 i n + 2 q IGB (3) where q = ... | Original |
5 pages, |
monolithic amplifier MAR 3 app note SST4393 AN106 transistor FN 1016 2n930 equivalent 2n5088 transistor 2N4393 siliconix fet transistor 2F to-236 transistor equivalent table chart Siliconix JFETs Dual SST404 Siliconix AN106 AN106 abstract |
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| Abstract: circuit identifying the equivalent noise sources en and in found in a JFET (or bipolar transistor). The , Recommended applications and part types are described in Table 1. en RG D G + This , the 1/f n region), is defined as en + 4kTR NB (1) where K = 1.38 x 1023 Joules/_K (Boltzmann's Constant). T = temperature in _K (_K = _C + 273), B = bandwidth in Hz, and RN [ 0.67/gfs, the equivalent , , the equivalent open-circuit input noise current, with the 2 i n + 2 q IGB (3) where q = ... | Original |
5 pages, |
PN4393 Siliconix "fet" SST4393 Siliconix JFET datasheet j201 jfet 2n5088 transistor 2N5088 equivalent siliconix fet monolithic amplifier MAR 3 app note 2N4393 2n930 equivalent 2N5088 SIMILAR ic for hearing aid AN106 AN106 abstract |
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| Abstract: and in found in a JFET (or bipolar transistor). The ennoise voltage referred to the input is , equivalent short circuit input noise voltage (with the exception of the 1/f n region), is defined as e n + , _C + 273), B = bandwidth in Hz, and RN [ 0.67/gfs, the equivalent resistance for noise. The en , resistance. In the socalled 1/fn region, en is expressed as e n + 4kTR NB (1 ) f 1f n) i n + 2 q I GB , generated by a resistor: in + 4kTB Rp (4) (2) where n varies from 1 to 2 depending upon ... | Original |
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transistor equivalent table chart AN106 PN4393 Siliconix "fet" SST4393 2N4393 Siliconix "low noise jfet" siliconix fet 2n930 equivalent AN106 abstract |
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| Abstract: circuit identifying the equivalent noise sources en and in found in a JFET (or bipolar transistor). The , Recommended applications and part types are described in Table 1. en RG D G + This , as e n + 4kTR NB (1) where K = 1.38 x 1023 Joules/_K (Boltzmann's Constant). T = temperature in _K (_K = _C + 273), B = bandwidth in Hz, and RN [ 0.67/gfs, the equivalent resistance for noise. , channel resistance. In the so-called 1/fn region, en is expressed as e n + 4kTR NB (1 ) f 1f n) i n + ... | Original |
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1F SOT-23 jfet JFET APPLICATIONS 2n930 equivalent PN4393 Siliconix JFET SST404 SST4393 transistor equivalent table chart AN106 2N4393 2N5088 equivalent 2n5088 transistor jfet to 92 AN106 abstract |
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| * Power Discrete BJT Electrical Circuit Model * * Product: 2N5088 * Package: TO-92 * Low Noise Transistor .MODEL 2N5088 npn + IS = 3.80189E-14 80189E-14 80189E-14 80189E-14 BF = 405.19 NF = 1 + BR = 16.246 NR = 1 ISE = 2.51189E-14 51189E-14 51189E-14 51189E-14 + NE = 2 ISC = 9.84993E-12 84993E-12 84993E-12 84993E-12 NC = 1.5 + VAF = 219.367 VAR = 10.6729 IKF = 0.40519 + IKR = 0.020893 RB = 898 www.datasheetarchive.com/files/fairchild/simulation-models/2n5088.lib |
Fairchild | 22/10/2012 | 0.99 Kb | LIB | 2n5088.lib |
| 15K W R 11 10K W C 3 47 m F 40V Q 3 , Q 4 , 2N4410 2N4410 2N4410 2N4410, 2N5088 R 4 transistor, Q 4 , to operate at near constant current which improves the linearity of the driver stage. The . Transistor Q 3 and resistors R 11 , R 12 , R 13 provide gate-source offset voltage for the output the bipolar transistor, Q 3 , emitter base voltage and the combined threshold voltages of the HEXFET 3 mH aircored Table 1. Components List The class A driver transistor www.datasheetarchive.com/files/international-rectifier/docs/wcd0000c/wcd00c22.htm |
International Rectifier | 06/10/1998 | 17.99 Kb | HTM | wcd00c22.htm |
| ) *2N5088 Spice Model p.5-103 *NS Si 625mW 30V 100mA 50MHz GenPurp pkg:TO-92B 1,2,3 .MODEL 2N5088/NS *= * National Semiconductor Spice Models published in * National Discrete Diode, Bipolar Transistor, * and JFET Products Databook, 1996 *= *PN2222A PN2222A PN2222A PN2222A Spice Model p.5-18 *NS Si 625mW 40V 1A 300MHz GenPurp pkg:TO-92B 1,2,3 .MODEL PN2222A/NS PN2222A/NS PN2222A/NS PN2222A/NS NPN (IS=14.34F XTI=3 EG=1.11 VAF=74.03 BF=255.9 + NE=1.307 ISE=14.34F IKF=.2847 XTB=1.5 BR=6.092 NC=2 www.datasheetarchive.com/files/spicemodels/misc/models/nsbjt.lib |
Spice Models | 21/02/2008 | 7.84 Kb | LIB | nsbjt.lib |
| B) 4 100 Amplifier Transistor NPN 2N5088/D (83.0kB) 4 Bipolar Transistors Document Title 12 V, 1.0 A, Low V CE(sat) PNP Transistor SOT723 NSS12100M3/D NSS12100M3/D NSS12100M3/D NSS12100M3/D (82.0kB) 0 100 12 V, 4.0 A, Low V CE(sat) NPN High Current Transistor SOT-23 NSS12201 NSS12201 NSS12201 NSS12201 Transistor WDFN3 NSS12501UW3/D NSS12501UW3/D NSS12501UW3/D NSS12501UW3/D (82.0kB) 2 100 12 V, 8.0 A, Low V www.datasheetarchive.com/files/on-semiconductor/taxonomy/bipolartransistors.htm |
On Semiconductor | 28/09/2007 | 122.37 Kb | HTM | bipolartransistors.htm |
| : PNP general purpose transistor (2-7-97 ) 2N5088: NPN general purpose transistor (3 transistor (11-4-97 ) 2N1711 2N1711 2N1711 2N1711: NPN medium power transistor (28-5-97 ) 2N1893 2N1893 2N1893 2N1893: NPN medium power transistor (17-4-97 ) 2N2219 2N2219 2N2219 2N2219; 2N2219A 2N2219A 2N2219A 2N2219A: NPN switching transistors (3-9-97 ) 2N2222 2N2222 2N2222 2N2222; 2N2222A 2N2222A 2N2222A 2N2222A: NPN switching transistors (29-5-97 ) 2N2369 2N2369 2N2369 2N2369: NPN switching transistor (20-6-97 ) 2N2484 2N2484 2N2484 2N2484: NPN general purpose transistor (1-5-97 ) 2N www.datasheetarchive.com/files/philips/discontinued/prunedlist-v1.html |
Philips | 14/02/2002 | 372.71 Kb | HTML | prunedlist-v1.html |
| general purpose transistor 1997-03-25 2N5087 2N5087 2N5087 2N5087 PNP general purpose transistor 1997-07-02 2N5088 NPN -06-19 1N5225B 1N5225B 1N5225B 1N5225B to 1N5267B 1N5267B 1N5267B 1N5267B Voltage regulator diodes 1996-04-26 2N1613 2N1613 2N1613 2N1613 NPN medium power transistor 1997-04-11 2N1711 2N1711 2N1711 2N1711 NPN medium power transistor 1997-05-28 2N1893 2N1893 2N1893 2N1893 NPN medium power transistor 1997-04-17 2N2219 2N2219 2N2219 2N2219; 2N2219A 2N2219A 2N2219A 2N2219A NPN switching transistors 1997-09-03 2N2222 2N2222 2N2222 2N2222; 2N2222A 2N2222A 2N2222A 2N2222A NPN switching transistors 1997-05-29 2N2369 2N2369 2N2369 2N2369 NPN switching transistor 1997-06-20 2N2484 2N2484 2N2484 2N2484 NPN general purpose transistor 1997-05-01 2N www.datasheetarchive.com/files/philips/discontinued/prunedlist-v2.html |
Philips | 16/06/2005 | 481.52 Kb | HTML | prunedlist-v2.html |
| transistor (3/25/97 ) 2N5087 2N5087 2N5087 2N5087: PNP general purpose transistor (2/7/97 ) 2N5088: NPN general purpose transistor (3/9/97 ) 2N5415 2N5415 2N5415 2N5415; 2N5416 2N5416 2N5416 2N5416: PNP high diodes (4/26/96 ) 2N1613 2N1613 2N1613 2N1613: NPN medium power transistor (11/4/97 ) 2N1711 2N1711 2N1711 2N1711: NPN medium power transistor (5/28/97 ) 2N1893 2N1893 2N1893 2N1893: NPN medium power transistor (4/17/97 ) 2N2219 2N2219 2N2219 2N2219; 2N2219A 2N2219A 2N2219A 2N2219A: NPN switching transistors (3/9/97 ) 2N2222 2N2222 2N2222 2N2222; 2N2222A 2N2222A 2N2222A 2N2222A: NPN switching www.datasheetarchive.com/files/philips/discontinued/prunedlist.html |
Philips | 24/04/2003 | 367.75 Kb | HTML | prunedlist.html |
| .1 MJE=0.5 CJC=8.99P VJC=0.3 MJC=0.3 TF=530P TR=368N) *2N5088 MCE 4/8/97 *Si 625mW 30V 100mA 50MHz GenPurpose pkg:TO-92B 1,2,3 .MODEL 2N5088 NPN (IS=10.2F NF=1 BF=780 VAF=98.6 IKF=60M ISE=1.68P NE=2 ,B,E *= *Default NPN Darlington Transistor pkg:TO-92B 1,2,3 .SUBCKT NPN1 1 2 3 Q1 1 2 4 QMOD .1 Q2 1 4 3 QMOD Pinout: C,B,E *= *Default NPN Darlington Transistor pkg ,B,E *= *Default NPN Darlington Transistor pkg:TO-92B 1,2,3 .SUBCKT NPN3 1 2 3 Q1 1 2 4 QMOD .1 Q2 1 4 3 QMOD R www.datasheetarchive.com/files/spicemodels/misc/models/mcebjt.lib |
Spice Models | 17/09/2010 | 51.12 Kb | LIB | mcebjt.lib |
| -20-1991 *PINOUT TO-39 3 2 1 * *SRC=2N5088;QN5088 QN5088 QN5088 QN5088;BJTs NPN;Amplifier;30V 50mA .MODEL QN5088 QN5088 QN5088 QN5088 NPN (IS=21 CJC=9.59P VJC=.3 MJC=.5 TF=530P TR=170N) * Motorola 45 Volt .2 Amp 300 MHz SiNPN Transistor 09 SiNPN Transistor 09-09-1991 *PINOUT TO-92 3 2 1 * *SRC=BC109C BC109C BC109C BC109C;BC109C BC109C BC109C BC109C;BJTs NPN -10 TR=6.2E-08 2E-08 2E-08 2E-08) * Philips 20 Volt 0.10 Amp 340 MHz SiNPN Transistor 06-27-1990 *PINOUT TO-18 3 340 MHz SiNPN Transistor 06-27-1990 *PINOUT TO-18 3 2 1 * *SRC=BC107A BC107A BC107A BC107A;BC107A BC107A BC107A BC107A;BJTs NPN www.datasheetarchive.com/files/spicemodels/misc/modelos/spice_complete/bjtn.lib |
Spice Models | 18/04/2010 | 92.14 Kb | LIB | bjtn.lib |
| voltage transistors hFE max >40 6 1 0 /catalog/parametrics/14.html Parametrics SA636DK SA636DK SA636DK SA636DK Voltage Low 20 7 1 0 /catalog/parametrics/15.html Parametrics PH2369 PH2369 PH2369 PH2369 Ptot max mW 500 Category Transistors fT min max V 15 Ptot max mW 250 Category Single switching transistors fT min MHz 13 1 0 /catalog Transistors in SC-88 SC-88 SC-88 SC-88 QTR1 = QTR2 NPN .MODEL QTR1 NPN + IS = 1.822E-14 822E-14 822E-14 822E-14 + NF = 0.9932 109 1 0 /models/bc846t_847 0 /models/bc847bpn_3.html Model : BC847BPN BC847BPN BC847BPN BC847BPN 3 BC847BPN BC847BPN BC847BPN BC847BPN BC847BPN BC847BPN BC847BPN BC847BPN Complementary NPN and PNP Transistors www.datasheetarchive.com/files/philips/search/docindex-v2.txt |
Philips | 14/02/2002 | 998.47 Kb | TXT | docindex-v2.txt |