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2n4250 TO-106

Catalog Datasheet MFG & Type PDF Document Tags

transistor 2N4248

Abstract: 2N4248 ,O ne. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 2N4248 2N4249 2N4250 2N4250A U.S.A. SILICON PNP TRANSISTOR TO-106 MAXIMUM RATINGS (TA=25°C) SYMBOL VCBO VCES VCEO VEBO PD Collector-Base Voltage Col , â'" 50 40 40 2N4250 MIN MAX 40 40 60 50 50 50 UNIT 60 60 60 5.0 , ) VEB-S.OV BVCBO BVCES BVCEO C0b 2N4248 2N4250 New Jersey Semiconductor
New Jersey Semiconductor
Original
transistor 2N4248 100KQ

2N4250

Abstract: 2N4248 Datasheet 2Hk2k8 2Hk2kS fAntaHl 2NA250 central 2N4250A semiconductor Corp. 145 Adams Avenue, Hauppauge, NY 11788 USA SILICON PNP TRANSISTOR Tel: (631) 435-1110 â'¢ Fax: (631) 435-1824 Manufacturers of World Class Discrete Semiconductors JEDEC T0-106 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR , . MAXIMUM RATINGS (Ta=25°C) 2Uk2k8 ZHk2kS SYMBOL 2N4250 2N4250A UNIT Collector-Base Voltage VCBO AO , NF Narrow Band, Vce=5.0V, IC=20yA, Rs=10Kft PBW=150Hz, f=1.0kHz 2Hk2kS 2N4250 2N4250A MIN MAX
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OCR Scan
T0106 T0-106 100UA

transistor 2N4248

Abstract: 2N4248 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 2N4248 2N4249 2N4250 2N4250A U.S.A. SILICON PNP TRANSISTOR TO-106 MAXIMUM RATINGS (TA=25°C) SYMBOL VCBO VCES VCEO VEBO PD Collector-Base Voltage Collector-Emitter Voltage , ELECTRICAL CHARACTERISTICS SYMBOL 2N4248 2N4250 40 40 40 5.0 200 ICBO V) VCB-40V (2N4250A , 0.25 0.9 100 100 100 50 50 50 V V V V mW 60 60 60 5.0 200 2N4250 MAX MIN
New Jersey Semiconductor
Original
100KJ2 PBW-150H

2n4250

Abstract: 2N4250 Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Dio. class="hl">2N4250 HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW , Category » Transistors Buy 2N4250 at our online store! 2N4250 Availability Special Offers: FREE UPS Ground Shipping on Orders above $150.00 Lanuage Translator: 2N4250 Information Did you Know , Parts Request a Quote Test Houses 2N4250 Specifications Military/High-Rel : N V(BR)CEO (V) : 40 V(BR
American Microsemiconductor
Original
STV3208 LM3909N LM3909 1N4510 2N1711

2SA495

Abstract: 2N4291 180 660 1 5 0.7 10 - - - 2N4248 P TO-106 200 100 40 50 - 0.1 5 0.25 10 40 6 - 2N4249 P TO-106 200 100 60 100 300 0.1 5 0.25 10 40 6 3 2N4250 P TO-106 200 100 40 250 700 0.1 5 0.25 10 50 6 2 2N4286 N , 250 80 60 400 10 1 0.2 1 60 12 - 2N4964 P TO-106 200 100 40 30 120 0.01 5 0.4 10 60 8 6 2N4965 P TO-106 200 100 40 80 400 0.01 5 0.4 10 60 8 6 2N4966 N TO-106 200 100 40 40 200 0.01 5 0.4 10 40 6 6 2N4967 N TO-106 200 100 40 100 600 0.01 5 0.4 10 40 6 6 2N4968 N TO-106 200 100 25 40 200 0.01 5 0.4 10 40
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OCR Scan
2N4061 2N4062 2N4287 2N4288 2N4289 2N4290 2SA495 2N4291 2N5133 2SA640 2SA564

2n4249

Abstract: se7055 f kHz PACKAGE M IN -M A X mA MIN - MAX mA MPS6523 MPS6522 2N5138 2N4965 2N4964 2N4250 , TO-92 TO-92 TO-106 TO-106 TO-106 WIDEBAND 50-800 @0.10 80-400 @ 0.01 30-120 @0.01 250-700 50 , 1.0 2.0 2.0 3.0 10.0 2.0 3.0 @ WIDEBAND WIDEBAND 0.1 WIDEBAND TO-106 TO-106 TO-92 TO-92 TO-106 TO-106 TO-106 @0.10 @ 1.00 @ 10.00 @ 10.00 @ @ @ 250-800 @0.10 150-500 @0.10 60 @ 0.001
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OCR Scan
2N498 2N2443 se7055 2N244 SE706 2n3742 2n4250 TO-106 2N5087 2N5086 EN3962 2N657 2N657JAN

LM334 equivalent transistor

Abstract: 50µs 0µA 1mA 0.01 I = 1mA 200µs 0µA 1.0 5µs 0mA 5V 106 0.001 100 , VIN ≥ VREF + 200mV VIN R1 15k 2N2905 R1 1.5k R2 300â"¦ C1 0.1 R1* 2N4250 V , 0.0022 LM334 LM334 V R3 100â"¦ â'" Q1 2N4250 VOUT = VZ + 64mV AT 25°C IOUT ≤ 3mA , ‰¥ 1.8V VIN 100k VIN C1 0.001 LM4250 2N4250 R1 33k V+ VOUT = 1.2V IOUT â , INRUSH CURRENT TO A DIRECT SHORT. Ground Referred Fahrenheit Thermometer VIN ≥ 3V R4 56k 2N4250
Linear Technology
Original
LM334 equivalent transistor LM134 LT1009 VREF/583

to 106 2n5133

Abstract: 2SA564A 180 660 1 5 0.7 10 - - - 2N4248 P TO-106 200 100 40 50 - 0.1 5 0.25 10 40 6 - 2N4249 P TO-106 200 100 60 100 300 0.1 5 0.25 10 40 6 3 2N4250 P TO-106 200 100 40 250 700 0.1 5 0.25 10 50 6 2 2N4286 N , 250 80 60 400 10 1 0.2 1 60 12 - 2N4964 P TO-106 200 100 40 30 120 0.01 5 0.4 10 60 8 6 2N4965 P TO-106 200 100 40 80 400 0.01 5 0.4 10 60 8 6 2N4966 N TO-106 200 100 40 40 200 0.01 5 0.4 10 40 6 6 2N4967 N TO-106 200 100 40 100 600 0.01 5 0.4 10 40 6 6 2N4968 N TO-106 200 100 25 40 200 0.01 5 0.4 10 40
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OCR Scan
2SA545 2SA561 2SA564A to 106 2n5133 2N4359 2N4384 2N4386 2N4410 2N5088 2N5089

2N4250

Abstract: 2N5133 10 - - - 2N4062 P TO-92B 360 100 30 180 660 1 5 0.7 10 - â'" - 2N4248 P TO-106 200 100 40 50 â'" 0.1 5 0.25 10 40 6 - 2N4249 P TO-106 200 100 60 100 300 0.1 5 0.25 10 40 6 3 2N4250 P TO-106 200 100 , 0.01 5 0.2 10 30 8 3 2N4410 N TO-92A 625 250 80 60 400 10 1 0.2 1 60 12 â'" 2N4964 P TO-106 200 100 40 30 120 0.01 5 0.4 10 60 8 6 2N4965 P TO-106 200 100 40 80 400 0.01 5 0.4 10 60 8 6 2N4966 N TO-106 200 100 40 40 200 0.01 5 0.4 10 40 6 6 2N4967 N TO-106 200 100 40 100 600 0.01 5 0.4 10 40 6 6
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OCR Scan
2N3707 2N3708 2N3709 2N3710 2N3711 2N3721

2N5055

Abstract: 2N551 5 100 300 0.1 1.0 0.25 10 â'" 6 '3 ' â'" â  .01 40 TO-106 2N4250 40 40 5 250 700 0.1 5 0.25 , mA V V mA MHz PF nS nS UA V 2N4389 15 12 6 30 180 10 5 0.15 10 400 6 _ 90 _ _ TO-106 2N5055 12 12 4 30 100 30 0.5 0.45 100 550 4.5 â'" 25 .05 10 TO-106 2N5140 5 5 4 20 140 10 1.0 0.75 50 400 5 â'" 20 .05 3 T0-106 2N5141 6 6 4 30 â'" 30 2 0.6 100 300 7 â'" 150 0.1 4 TO-106 , 700 3 â'" 20 - â'" TO-106 - ' PNP EPOXY LOW NOISE LEVEL AMPLIFIER ~ TYPE VCB VCE
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OCR Scan
2N5228 2N5910 2N5378 2N551 2N550 2N547 2N5379 2N657A 2N696

LM134 334

Abstract: 2N4250 0µA 1mA 0.01 I = 1mA 5µs 0mA 5V 106 0.001 100 1k FREQUENCY (Hz) 10 10k , VIN VIN VREF + 200mV VIN R1 15k 2N2905 R1 1.5k R2 300 C1 0.1 R1* 2N4250 V , LM334 LM334 V R3 100 ­ Q1 2N4250 VOUT = VZ + 64mV AT 25°C IOUT 3mA LT1009 + VZ , VIN C1 0.001 LM4250 2N4250 R1 33k V+ VOUT = 1.2V IOUT 200µA R LM334 1N457 , Referred Fahrenheit Thermometer VIN 3V R4 56k C1 0.01 V+ R LM334 V­ 2N4250 VOUT = 10mV/°F
Linear Technology
Original
LM134 334 LM234 14 pin 1N457 equivalent photoconductive diode LM334r LM134H LM134-3

2n5378

Abstract: 2n4250 TO-106 300 0.1 1.0 0.25 10 â'" 6 '3 ' â'" . .01 40 TO-106 2N4250 40 40 5 250 700 0.1 5 0.25 10 6 2 , V mA MHz PF nS nS WA V 2N4389 15 12 6 30 180 10 5 0.15 10 400 6 _ 90 _ _ TO-106 2N5055 12 12 4 30 100 30 0.5 0.45 100 550 4.5 â'" 25 .05 10 TO-106 2N5140 5 5 4 20 140 10 1.0 0.75 50 400 5 â'" 20 .05 3 T0-106 2N5141 6 6 4 30 â'" 30 2 0.6 100 300 7 â'" 150 0.1 4 TO-106 2N5228 5 , â'" 20 - â'" TO-106 - - PNP EPOXY LOW NOISE LEVEL AMPLIFIER ~ TYPE VCB VCE Veb
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OCR Scan
623B5 625-J CBR12 CBR30 0000S23

2N4249

Abstract: 2N5055 60 60 5 100 300 0.1 1.0 0.25 10 â'" 6 '3 ' â'" . .01 40 TO-106 2N4250 40 40 5 250 700 0.1 5 , mA V V mA MHz PF nS nS WA V 2N4389 15 12 6 30 180 10 5 0.15 10 400 6 _ 90 _ _ TO-106 2N5055 12 12 4 30 100 30 0.5 0.45 100 550 4.5 â'" 25 .05 10 TO-106 2N5140 5 5 4 20 140 10 1.0 0.75 50 400 5 â'" 20 .05 3 TO-106 2N5141 6 6 4 30 â'" 30 2 0.6 100 300 7 â'" 150 0.1 4 TO-106 , 700 3 â'" 20 - â'" TO-106 - â  PNP EPOXY LOW NOISE LEVEL AMPLIFIER ~ TYPE VCB
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OCR Scan
2N719A
Abstract: mA V 2N4248 2N4249 2N4250 2N4250A 2N4964 40 60 40 70 50 40 60 40 60 40 5 , '" _ - .01 .01 .01 10 6 6 6 â'" : 8 .025 40 40 40 _ 20 TO-106 TO-106 TO-106 TO-106 TO-106 0.4 â'" â'" 0.2 0.2 10 â'" â'" 10 10 60 â'" â'" 20 20 8 â , TO-106 TO-92 TO-92 TO-92P TO-92P - S W IT C H IN G A N D G E N E R A L P U R P O S E V , 2N699 ~ 0.25 0.25 0.25 â'" 0.4 max 20 20 30 30 30 TO-106 TO-106 TO-106 TO-106 -
OCR Scan
CBR10S CBR25S 0000SE3

2N4148

Abstract: 2N3638 transistor 2N2944 2N3583 2N3971 2N4123 2N4250 2N4 92 3 2N2944A 2N3584 2N3972 2N4124 2N4250A 2N5001 2N2945 2N3585
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OCR Scan
2N3731 2N2492 2N4147 2N4148 2N2646 2N2706 2N3638 transistor 2N3638 Transistor 2n3005 2N2419A 2N3001 2N3730 2N4002 2N4140 2N4299

CURRENT-TO-FREQUENCY

Abstract: IC LM331 advantage of the MOSFET's superior current leakage and current drift Q1 Q2 Q5 - 2N3906 2N4250 or similar , digitized and integrated as a standard part of the analysis of the data Q1 - 2N4250 or 2N3906 Q2 Q3 Q4
National Semiconductor
Original
AN-240 CURRENT-TO-FREQUENCY IC LM331 2N3565 photoresistors Photoresistor 2N3565 pin

2N3565

Abstract: 2N4250 Q1, Q2, Q5 - 2N3906, 2N4250 or similar Q3, Q4 - 3N165, 3N190 or similar. See text Keep Q1, Q2 and , Phototransistors - Photo diodes 00562206 Q1 - 2N4250 or 2N3906 Q2, Q3, Q4 - 2N3904 or 2N3565 FIGURE 6
National Semiconductor
Original
2n3565 equivalent transistor lm11c application notes lm331 1N484 1N914 2N5909

2N4250

Abstract: 2N3565 39562 an005622 Rev. No. 3 cmserv Proof 4 AN005622-5 Q1, Q2, Q5 - 2N3906, 2N4250 or , 2N4250 or 2N3906 Q2, Q3, Q4 - 2N3904 or 2N3565 FIGURE 6. Current-to-Frequency Converter For Positive
National Semiconductor
Original
pico amp meter LF351A IC LM331 cost of the ic LF351 2n3906 npn dual

CANON-FN30

Abstract: ROSEMOUNT-118MF-100 measurement and control circuits which function from a 5V supply. 8.25k 10k 250k Q1, Q2 = 2N4250 , FULL-SCALE TRIM Q1 2N4250 + +ISOL 10k + 100pF +ISOL ­ 1M 1M C1A LT1018A Q2 2N4250 +ISOL ­ 82k 100k C1B LT1018B 4.7k 1M +ISOL 4F POLYSTYRENE 4.7k Q3 , LT1017/LT1018 Basic Features EOS-70V EOSTC-2V/°C IBIAS-15nA Gain-1.0 × 106 Supply I
Linear Technology
Original
CANON-FN30 ROSEMOUNT-118MF-100 PC-SS0-32 PICO-31080 CANON-FN30-R13NIB CA3046 pnp array LT1014 AN11-16

NE555 pulse generator

Abstract: NE555 3.33 10.6 4 8.8 2.4 10 3.33 11.2 4.2 0.1 0.25 0.1 0.25 5 1.67 5.2 , 2N4250 or equiv. VCC 6 VCC C Output 3 5 0.01µF R2 RA 51k 1 4 RB
STMicroelectronics
Original
NE555 SA555 SE555 NE555 pulse generator NE555 PIN OUT astable multivibrator NE555 SA555 Application note ne555 short
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