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HS0-6254RH-Q Intersil Corporation 5 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, DIE-16 visit Intersil

2n3906 equivalent transistor

Catalog Datasheet MFG & Type PDF Document Tags

2n3906 equivalent transistor

Abstract: data sheet transistor 2n3906 2N3906 PNP Silicon Elektronische Bauelemente General Purpose Transistor RoHS Compliant , specification will not be informed individual Page 1 of 3 2N3906 PNP Silicon Elektronische Bauelemente General Purpose Transistor TYPICAL CHARACTERISTICS 3V 275 < 1 ns 275 10 k +0.5 V , h FE, DC CURRENT GAIN (NORMALIZED) Delay and Rise Time Equivalent Test Circuit 2.0 Storage and Fall Time Equivalent Test Circuit TJ = +125°C VCE = 1.0 V +25°C 1.0 0.7 -55°C
SeCoS
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2n3906 equivalent transistor data sheet transistor 2n3906 transistor 2N3906 datasheet transistor 2N3906 PNP 2N3906 2n3906 specification

2n3906 equivalent transistor

Abstract: 2N3906 Resistance, Junction to Ambient R9JA 200 °c.w 2N3905 2N3906 CASE 29-04, STYLE 1 TO-92 (TO-226AA) GENERAL PURPOSE TRANSISTOR PNP SILICON ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted , 2N3906 hFE 30 60 _ I , He = 1 o mAdc, VCE = 1.0 Vdc) 2N3905 2N3906 40 80 â'" »C = 10 mAdc, Vce = 1-OVdcl 2N3905 2N3906 50 100 150 300 HC = 50 mAdc. VCE = 1.0 Vdc) 2N3905 2N3906 30 60 â'" ('C = 100 mAdc, Vce = 10 Vdc' 2N3905 2N3906 15 30 â'" Collector-Emitter Saturation Voltage "c - 10 mAdc, Ib = 1 0
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2n3906 hie 2N3906 MOTOROLA 2N3905 Equivalent transistor 2N3905 2N3905 MOTOROLA 2n3906 equivalent J-150

2n3906 equivalent transistor

Abstract: 10KO 2N3906 PNP GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE 40 Volts POWER 625 mWatts , Duty Cycle ~ 2.0% Delay and Rise Time Equivalent Test Circuit REV.0-DEC.12.2005 Duty Cycle ~ 2.0% Storage and Fall Time Equivalent Test Circuit PAGE . 2 2N3906 ELECTRICAL , C/W PAGE . 1 2N3906 ELECTRICAL CHARACTERISTICS PA RA M E TE R S YM B O L T E S T C , SWITCHING TIME EQUIVALENT TEST CIRCUITS 3V 3V 275O 275O < 1ns 0 < 1ns +9.1V 10KO 0.5V
PanJit International
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10KO 1N916 MIL-STD-750

PNP 2n3906 331

Abstract: 2N4148 prevent a lot of problems: 1. Use a diode-connected transistor. Either 2N3904 or 2N3906. Follow , Jones Introduction Many Linear Technology devices use an external PNP transistor to sense temperature , devices use an external bipolar transistor p-n junction to measure temperature. The relationship between , C1 2N3906 10F Q1 AN137 F01 Figure 1. The operating point at 500A gives a DC impedance of , the filter capacitor is quite effective. R1 1 V1 C2 10nF C1 2N3906 10F Q1 Now the temperature
Linear Technology
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LTC3883 PNP 2n3906 331 2N4148 2n3906 331 NPn 2n3906 331 transistor kt 925 capacitor 476 10k 935 LTC3880 LTC2974 AN137-12

BAT85 equivalent

Abstract: db25m pinout (surface mount equivalent to 2N3906) are included on the board in order to demonstrate the MIC384's , . Red LED 1 /CRIT N/A N/A Not stuffed Q1 2N3906 Motorola PNP transistor, TO-92 1 Q2 2N3906 Motorola PNP transistor, TO-92 1 Q3 2N3906 Motorola PNP , diode or transistor in place of either of the on-board remote transistors. User configurable jumpers , Serial Clock 4 2 TP4 VDD 3 8 If using a transistor, the base and collector should be
Micrel Semiconductor
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DB25M BAT85 equivalent db25m pinout 2N3906 Equivalent BC cfr-25jb-4k7 transistor 2S D 716 Yageo zor datasheet MMBT3906

2N3906 MOTOROLA

Abstract: MC5207 is designed to support rapid prototyping of circuits employing the MIC284. A MMBT3906 transistor (surface mount equivalent to 2N3906) is included on the board in order to demonstrate the MIC284's ability , embedded thermal diode inside an integrated circuit. A diodeconnected 2N3906-type transistor, Q2, is , 2N3906 Motorola PNP transistor, TO-92 1 Q3 2N3906 Motorola PNP transistor, TO-92 1 Q4 2N3906 Motorola PNP transistor, TO-92 1 R1 CFR-25JB-22K Yageo 22k 1
Micrel Semiconductor
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MC5207 Yageo zor motorola pnp transistor CFR-25JB-100R datasheet connector DB25m ZOR-25-B

C2 6 zener diode

Abstract: Transistor AND DIODE Equivalent list rated at 5V Vgs) 2N3906 (any 60V PNP signal transistor is OK) Zetex FMMT596 (any 150V PNP signal transistor is OK) MAX668 PWM DC-DC Controller MAX8867 linear regulator 2 - , 1N4448 equivalent 60V signal diode) Central semiconductor CMPD7000 dual diode (These are duals, but four 1N4448 equivalent 60V signal diodes can be substituted for D3+D4 and D5+D6.) Zetex BZX84C6V8
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C2 6 zener diode Transistor AND DIODE Equivalent list diode ZENER C2 zener diode c12 zener 18v sot23 Zener Diode C3 4 ECA-2CHG010 MBR0540L CMPB4448 MA3068CT

ac servo amplifier schematic

Abstract: under voltage relay lm324 in circuit , requires a buffer transistor (2N3906) to adequately drive the LED. U4 is used as a transresistance , usually a current sink constructed with discrete components. This example shows a Darlington transistor , Telephone Line 2N3906 LM324 IL300 U4 ­ Vcc1 7 2 100 C4 8 K2 1 2 R10 , 2N3906 Q3 1 IL350 U6 K2 K1 2 5 + XMT Dynamic loop Current control 3 U7 6 , 2N3906 - ZD3 56V 6 U1 OP-90 D1, D2 K1 Q2 100 R3 7 8 K2 - 2
Vishay Intertechnology
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LH1056 ac servo amplifier schematic under voltage relay lm324 in circuit 2N3906 Darlington transistor example Circuit Diagram switch control unity hybrid 2-4 wire

4N35 CONTROL CIRCUIT

Abstract: LH1056 constructed with discrete components. This example shows a Darlington transistor current sink providing this , photodiode amplifier requires a minimum of components, U5. Note that U3, LM324, requires a buffer transistor (2N3906) to adequately drive the LED. U4 is used as a transresistance amplifier, converting the receive , LM324 7 + 5 R7 Gnd1 C5 3 Gnd1 + Gnd1 Isolated Telephone Line 2N3906 LM324 , ZD2 MOV R4 C2 R6 R7 7 C4 3 - 6 2 4 4 27V 2N3906 - ZD3
Infineon Technologies
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4N35 CONTROL CIRCUIT DAA 2-4 wire SIGNAL PATH designer 2N3906 Central OP-AMP LM324 transistor 2N3906 Darlington 1-888-I

under voltage relay lm324 in circuit

Abstract: ac servo amplifier schematic , U5. Note that U3, LM324, requires a buffer transistor (2N3906) to adequately drive the LED. U4 is , shows a Darlington transistor current sink providing this path. Various optical transformer 2-4 hybrid , Line 2N3906 LM324 R10 1 2 ­ IL300 U4 8 2 K2 7 Vcc1 100 C4 C7 , 7 C4 3 - 6 2 4 4 27V 2N3906 - ZD3 56V MOV K1 Q2 6 U1 OP , 4 7 C5 8 R8 7 2N3906 Q3 1 IL350 U6 K2 K1 6 2 C6 100 R10 6
Siemens
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2n3906 equivalent transistor OPTOCOUPLER TIP330 modem hybrid separate transmit 600 servo amplifier schematic Transformer isolated amplifier TL431
Abstract: SAMSUNG SEMICONDUCTOR INC MPS6522 D | 7*^4145 0007327 1 | PNP EPITAXIAL SILICON TRANSISTOR T-29-21 AMPLIFIER TRANSISTOR â'¢ Collector-Emitter Voltage: Veto =25V â , 2N3906 for graphs ELECTR ICA L CHARACTERISTICS (Ta=25°C) Characteristic Symbol , DIMENSIONS , 0007417 £ 1 ^ 1-20 * TO-92 AMMO PACK Unit: mm FLAT SIDE OF TRANSISTOR and ADHESIVE TAPE VISIBLE SAMSUNGâ'™S AMMO PACK is equivalent to styles A,B,C,D of reel pack depending on -
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100KH GGD7415
Abstract: SAMSUNG SEMICONDUCTOR INC MPS6523 14E O | 7e lt14 m ¿ 0007356 3 PNP EPITAXIAL SILICON TRANSISTOR T -29-21 AMPLIFIER TRANSISTOR â'¢ Coltector-Emltter Voltags: Vc£o =25V â , 2N3906 for graphs ELECTRICAL CHARACTERISTICS (Ta=250C) Characteristic Symbol II 09 SAMSUNG , | PACKAGE DIMENSIONS , 1 ^ 1 - 2 * TO-92 AMMO PACK Unit: mm FLAT SIDE OF TRANSISTOR and ADHESIVE TAPE VISIBLE SA M SU N G â'™S A M M O PACK is equivalent to styles A .B .C .D of reel -
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2n3906 equivalent transistor

Abstract: 2N3906 samsung {SAMSUNG SEMICONDUCTOR INC 14E 0 | 71fa.ima 0007354 t , | MPS6517 AMPLIFIER TRANSISTOR * Collector-Emitter Voltage: Veto =40V * Collector Dissipation: Pc (max)=625mW PNP EPITAXIAL SILICON TRANSISTOR T , Temperature 1Refer to 2N3906 for graphs Symbol VcEO VcBO V ebo Rating 40 40 4 100 625 150 -5 5 -150 ` , Unit: mm TO-92 AMMO PACK FLAT SIDE OF TRANSISTOR and ADHESIVE TAPE VISIBLE SAMSUNG'S AMMO PACK is equivalent to styles A.B.C.D of reel pack depending on which box-flat Is opened and which end of
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2N3906 samsung

2n3906 equivalent transistor

Abstract: 1N916 MMDT3906 DUAL SURFACE MOUNT PNP TRANSISTORS This device contains two electrically-isolated 2N3906 , . SOT- 363 4 5 FEATURES 6 3 Electrically Isolated Dual PNP Switching Transistor 2 , MMDT3906 ELECTRICAL CHARACTERISTICS (Each Transistor) TJ = 25°C Unless otherwise noted Parameter Min , EQUIVALENT TEST CIRCUITS 3V 3V 275 275 < 1ns 0 < 1ns +9.1V 10K 0.5V C S * < 4pF , % Duty Cycle ~ 2.0% Storage and Fall Time Equivalent Test Circuit Delay and Rise Tim e Equivalent
PanJit International
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SC70-6L TRANSISTOR S2A marking code nt amplifier T/R13

u724

Abstract: norton amplifier minimum of components, U5. Note that U3, LM324, requires a buffer transistor (2N3906) to adequately drive , example shows a Darlington transistor current sink providing this path. Various optical transformer 2-4 , Gnd1 3 C5 + Gnd1 Gnd1 LM324 2 ­ C4 Isolated Telephone Line 2N3906 R10 1 Vcc1 , 1 56V 2 R1 ZD 3 27V ZD2 + Q2 U1 OP-90 2N3906 R4 C2 4 8 K2 , C4 U4 + 15V Ring 7 2N3906 Q3 1 IL350 U6 K2 K1 6 5 17803 6 100 R3
Vishay Semiconductors
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ILD255 u724 norton amplifier 4N35 LH1540 1N4007 vishay LH1546

MPQ3906

Abstract: 106V MPQ3906 (silicon) QUAD DUAL-IN-LINE PNP SILICON ANNULAR AMPLIFIER/SWITCH TRANSISTOR . .designed for low current amplifier and switching applications. Transistors Similar to 2N3905, 2N3906 , DUAL-IN-LINE PNP SILICON AMPLIFIER/SWITCH TRANSISTOR MAXIMUM RATINGS Rating Symbol Value Unit , Collector Current â'" Continuous >C 200 rnAdc Each Transistor Four Transistors Equal Power Total Power , TIME EQUIVALENT TEST CIRCUIT C, < 4.0 pF" FIGURE 2 - STORAGE AND FALL TIME EQUIVALENT TEST CIRCUIT
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2N3250 106V 2n3250 bsc 2N3906 die MPQ3906 equivalent

PSSI2021SAY

Abstract: PULSE CURRENT SOURCE pnp transistor such as the 2N3906, VEB is typically 0.6V at room temperature and low collector , circuit. Unfortunately, the transistor's offset voltage varies based on device and temperature. Instead , equivalent to the PSSI2021SAY and consumes less current, and the current is practically voltage independent , with bandgap reference. The PSSI2021SAY is replaced by transistor Q2, bandgap reference U1, and , ), 40V for 2N3906 (Q2), and 350V for Q1. The limiting component is Q2. At 40V, the current through U1 is
Maxim Integrated Products
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DS2406 DS2502 DS1982 DS2505 DS1985 DS9097U-E25 PULSE CURRENT SOURCE DN3135 DS2480B

2N3906 MOTOROLA

Abstract: 2n3906 TRANSISTOR REPLACEMENT TRANSISTOR AND ADHESIVE TAPE VISIBLE. Style M fan fold box is equivalent to styles E and F of reel pack , BASE 1 EMITTER 2N3905 2N3906* *Motorola Preferred Device 1 MAXIMUM RATINGS Rating Collector , 2­9 2N3905 2N3906 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued , 2N3905 2N3906 2N3905 2N3906 2N3905 2N3906 2N3905 2N3906 2N3905 2N3906 VCE(sat) - - VBE(sat) 0.65 - , 100 mAdc, VCE = 5.0 Vdc, RS = 1.0 k , f = 1.0 kHz) 2N3905 2N3906 hre 2N3905 2N3906 hfe 2N3905 2N3906
ON Semiconductor
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2n3906 TRANSISTOR REPLACEMENT BC237 2n3906 REPLACEMENT equivalent transistor 2N1711 applications of Transistor BC108 2N1893 equivalent 226AA MM3001 MM3725 MM4001 MMAD1106 MMBF4856LT1

CA3085

Abstract: CA3085 diagram The collector of the series-pass output transistor is brought out separately at terminal 2 ("current booster") to provide base drive for an external p-n-p transistor; this approach is one method of , controlled by an appropriate external sensing network, transistor Q15, serves to provide protective , current-limiting mode transistor Q15 provides current-limiting to protect the CA3085 and/or limit the load , resistor increases, base drive is supplied to transistor Q15 so that it becomes increasingly conductive
Harris Semiconductor
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AN6157 CA3085 diagram triac specifications CA3059 equivalent schematic diagram 12v ac regulator 2N2102 transistor in4001 rectifier diode CA3085A CA3085B

CA3085

Abstract: IN4001 transistor output transistor is brought out separately at terminal 2 ("current booster") to provide base drive for an external p-n-p transistor; this approach is one method of regulating currents greater than 100mA , , transistor Q15, serves to provide protective current-limiting characteristics by diverting base drive from , terminal 1. In the current-limiting mode transistor Q15 provides current-limiting to protect the CA3085 , voltage drop across this resistor increases, base drive is supplied to transistor Q15 so that it becomes
Intersil
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IN4001 transistor voltage regulator ca3085a Stancor TP3 transformer diode IN4001 equivalent 2N3904 TRANSISTOR using darlington amplifier IN914 ISO9000
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