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JAN2N3055 Microsemi Corporation Power Bipolar Transistor, 15A I(C), 70V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin, TO-3, 2 PIN visit Digikey Buy

2n3055 25

Catalog Datasheet MFG & Type PDF Document Tags

2N3055 power amplifier circuit

Abstract: 2n3055 applications. 2N3055 * PNP MJ2955 * *ON Semiconductor Preferred Device NPN · DC Current Gain - hFE = , Dissipation @ TC = 25_C Derate above 25_C PD 115 0.657 Watts W/_C _C Operating and Storage Junction , DISSIPATION (WATTS) 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (°C) 175 200 Figure 1 , Publication Order Number: 2N3055/D 2N3055 MJ2955 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ , ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic
ON Semiconductor
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2N3055 power amplifier circuit 2n3055 application 2N3055 MEXICO 2n3055 circuit 2N3055 typical applications 2N3055 MJ2955 204AA 2N3055/D

2N3055

Abstract: 2n3055 malaysia 2N3055 MJ2955 Complementary power transistors Features Low collector-emitter saturation , schematic diagram Device summary Order code Marking 2N3055 2N3055 MJ2955 MJ2955 . Rev 7 Packaging TO-3 January 2008 Package tray 1/7 www.st.com 7 2N3055 , Symbol Parameter Value NPN 2N3055 PNP Unit MJ2955 VCBO Collector-emitter voltage , PTOT Total dissipation at Tc 25°C Tstg Storage temperature TJ Note: 2/7 Max
STMicroelectronics
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2n3055 malaysia 2n3055 audio 2N3055 schematic diagram 2N3055 ST st 2n3055 2n3055 audio amplifier

RCA-2N3055

Abstract: rca 2n3055 ~ T -3 3 -/3 General-Purpose Power Transistors_ 2N3055 File Number 1699 , operating area TERMINAL DESIGNATIONS The RCA-2N3055 silicon n-p-n transistor intended for a wide , .115 W (Tc-25° C) Derate Linearly above 25° C , General-Purpose Power Transistors 2N3055 ELECTRICAL CHARACTERISTICS, At Case Temperature (Tc) = 25°C Unless Otherwise Specified TEST CONDITIONS VOLTAGE CURRENT A dc Vdc V ce IcEX Ic e x . V
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OCR Scan
RCA-2N3055 KCS-27516 rca 2n3055 2n3055 voltage regulator 2N3055 curve 2N3055 series voltage regulator 2n3055 RCA data TQ-204AA/TO-3

2N3055

Abstract: DC variable power with 2n3055 Area http://onsemi.com 36 2N3055, MJ2955 500 300 200 hFE , DC CURRENT GAIN 25°C 100 70 50 30 , 2N3055, MJ2955 Preferred Device Complementary Silicon Power Transistors . . . designed for , Total Power Dissipation @ TC = 25°C Derate above 25°C PD 115 0.657 W W/°C °C Operating and Storage , Characteristic Symbol RqJC Max Unit xxxx55 = Device Code xxxx= 2N3055 or MJ2955 A = Assembly Location , reliability may be affected. 160 ORDERING INFORMATION Device 2N3055 2N3055G Package TO-204AA TO
ON Semiconductor
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DC variable power with 2n3055 power transistor 2n3055 2N3055 transistor 2n3055 amplifier 2n3055h mj2955 safe operating area

2n3055

Abstract: 2N3055 NPN Transistor 2N3055(NPN), MJ2955(PNP) Preferred Device Complementary Silicon Power Transistors , Code = Year = Work Week = Country of Orgin 60 ORDERING INFORMATION 40 Device 0 25 , 0 Package 2N3055 20 TOâ'204AA (Pbâ'Free) 100 Units / Tray TC, CASE TEMPERATURE , Number: 2N3055/D 2N3055(NPN), MJ2955(PNP) Ã Ã Ã Ã Ã Ã , , Junctionâ'toâ'Case Max 1.52 _C/W ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted
ON Semiconductor
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2N3055 NPN Transistor 2N3055 power amplifier circuit diagram 2n3055 circuit diagram 2n3055 application note

2N3055 MOTOROLA

Abstract: 2N3055 power amplifier circuit MOTOROLA Order this document by 2N3055/D SEMICONDUCTOR TECHNICAL DATA NPN 2N3055 , Power Dissipation @ TC = 25_C Derate above 25_C PD 115 0.657 Watts W/_C TJ, Tstg ­ 65 , 25 50 75 100 125 150 TC, CASE TEMPERATURE (°C) 175 200 Figure 1. Power Derating , . 1995 Motorola Bipolar Power Transistor Device Data 1 2N3055 MJ2955 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î Î Î Î
Motorola
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2N3055 MOTOROLA MJ2955 300 watts amplifier MJ2955 2n3055 200 watts amplifier 2N3055 NPN MOTOROLA POWER TRANSISTOR 2N3055/MJ2955 pin out TRANSISTOR 2n3055

2N3055 power circuit

Abstract: 2N3055 power amplifier circuit general­purpose switching and amplifier applications. 2N3055 * PNP MJ2955 * *ON Semiconductor Preferred Device , Current - Continuous Base Current 15 7 Total Power Dissipation @ TC = 25_C Derate above 25_C PD 115 0.657 , 120 100 80 60 40 20 0 PD, POWER DISSIPATION (WATTS) 0 25 50 75 100 125 150 TC, CASE , April, 2001 ­ Rev. 2 Publication Order Number: 2N3055/D 2N3055 MJ2955 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ , ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25
ON Semiconductor
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2N3055 power circuit 2n3055 equal 2N3055 JAPAN MJ2955 mexico 2N3055-1 value of 2n3055

MJ2955 300 watts amplifier circuit diagram

Abstract: MJ2955 2n3055 200 watts amplifier Publication Order Number: 2N3055/D 2N3055, MJ2955 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise , 2N3055, MJ2955 Preferred Device Complementary Silicon Power Transistors . . . designed for , 7 Adc Total Power Dissipation @ TC = 25°C Derate above 25°C PD 115 0.657 Watts W/°C TJ, Tstg ­ 65 to + 200 °C xxxx55 = Device Code xxxx= 2N3055 or MJ2955 A = Assembly , Device Package Shipping 2N3055 TO-204AA 100 Units / Tray MJ2955 TO-204AA 100
ON Semiconductor
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MJ2955 300 watts amplifier circuit diagram MJ2955 2n3055 200 watts amplifier diagram MJ2955 TRANSISTOR 2N3055 equivalent transistor NUMBER DC variable power with 2n3055 datasheet mj2955 TO-3

2N3055

Abstract: hfe 2n3055 2N3055 MJ2955 Complementary power transistors Features Low collector-emitter saturation , schematic diagram Device summary Order code Marking 2N3055 2N3055 MJ2955 Package Packaging MJ2955 TO-3 tray 1/7 . 7 2N3055 MJ2955 Absolute maximun rating 1 , 2N3055 PNP Unit MJ2955 VCBO Collector-emitter voltage (IE = 0) 100 V VCER , 115 W -65 to 200 °C 200 °C PTOT Total dissipation at Tc 25°C Tstg Storage
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JESD97 0015923C hfe 2n3055 2n3055 25 2n3055 pnp general purpose 2n3055 transistors 2n3055 IC

2N3055

Abstract: 2n3055 malaysia 2N3055 MJ2955 ® COMPLEMENTARY SILICON POWER TRANSISTORS s s STMicroelectronics PREFERRED SALESTYPES COMPLEMENTARY NPN-PNP DEVICES DESCRIPTION The 2N3055 is a silicon Epitaxial-Base , Collector Current IB Base Current P tot T stg Tj Total Dissipation at T c 25 o C Storage Temperature Max. Operating Junction Temperature 2N3055 PNP Unit MJ2955 100 V 70 V 60 , types voltage and current values are negative. August 1999 1/4 2N3055 / MJ2955 THERMAL DATA
STMicroelectronics
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pnp transistor 2N3055 complementary npn-pnp complementary npn-pnp power transistors Mj2955 power transistor P003F

2n3055 application note

Abstract: 2N3055 power amplifier circuit 2N3055, MJ2955 Preferred Device Complementary Silicon Power Transistors . . . designed for , = 25°C Derate above 25°C PD 115 0.657 ­ 65 to + 200 °C Symbol Max Unit , DIAGRAM °C/W Operating and Storage Junction Temperature Range xxxx55 = Device Code xxxx= 2N3055 , . ORDERING INFORMATION Package Shipping 2N3055 TO-204AA 100 Units / Tray 2N3055G TO , Techniques Reference Manual, SOLDERRM/D. 20 0 0 25 50 75 100 125 150 175 200
ON Semiconductor
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OF transistor 2n3055 to-3 package 2N30

2n3055 application note

Abstract: 2N3055 power amplifier circuit diagram 2N3055(NPN), MJ2955(PNP) Preferred Device Complementary Silicon Power Transistors . . . , Continuous Base Current 15 7 Total Power Dissipation @ TC = 25°C Derate above 25°C PD 115 0.657 W W/°C °C , CHARACTERISTICS Characteristic Symbol RqJC Max Unit xxxx55 = Device Code xxxx= 2N3055 or MJ2955 A = , may occur and reliability may be affected. 160 ORDERING INFORMATION Device 2N3055 2N3055G Package , 100 Units / Tray 100 Units / Tray PD, POWER DISSIPATION (WATTS) 140 120 100 80 60 40 20 0 0 25
ON Semiconductor
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2n3055 pin out diagram NPN Transistor 2N3055

2n3055 malaysia

Abstract: MJ2955 2n3055 200 watts amplifier 2N3055, MJ2955 Complementary Power Transistors Designed for use in general-purpose amplifier and switching applications. Features: · Power dissipation - PD = 115W at TC = 25°C. · DC current gain hFE = 20 to 70 at IC = 4.0A. · VCE(sat) = 1.1V (Maximum) at IC = 4.0A, IB = 400mA. NPN 2N3055 PNP , Total Power Dissipation at TC = 25°C Derate above 25°C PD 115 0.657 W W/°C TJ, TSTG , 31/05/05 V1.0 2N3055, MJ2955 Complementary Power Transistors Thermal Characteristics
Multicomp
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2n3055 collector characteristic curve transistor 2N3055 npn 2n3055 2n3055 pin Transistor MJ2955

2N3055

Abstract: 2n3055 motorola MOTOROLA Order this document by 2N3055/D SEMICONDUCTOR TECHNICAL DATA NPN 2N3055 , Base Current IB 7 Adc Total Power Dissipation @ TC = 25_C Derate above 25_C PD 115 , 60 40 20 0 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (°C) 175 200 Figure , overall value. © Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data 1 2N3055 MJ2955 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted
Motorola
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2N3055-D

2n3055

Abstract: 2N3055G 2N3055(NPN), MJ2955(PNP) Preferred Device Complementary Silicon Power Transistors , Adc Total Power Dissipation @ TC = 25°C Derate Above 25°C PD 115 0.657 W W/°C TJ , ORDERING INFORMATION 40 Device 0 25 50 75 100 125 150 200 100 Units / Tray , -204AA 100 Units / Tray MJ2955G 0 Package 2N3055 20 TO-204AA (Pb-Free) 100 Units / Tray , . Publication Order Number: 2N3055/D 2N3055(NPN), MJ2955(PNP) Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ON Semiconductor
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2n3055

Abstract: 2N3055 curve mA MAXIMUM RATINGS NPN PNP 2N3055 MJ2955 Characteristic Symbol Rating Unit Collector-Emitter , 25 50 75 100 125 150 175 200 Tc, TEMPERATURE^) K E PIN 1.BASE 2.EMITTER COLLECTOR(CASE , ://www.bocasemi.com 2N3055 NPN / MJ29S5 PNP ELECTRICAL CHARACTERISTICS ( Tc = 25°C unless otherwise noted , , VCE = 10 V , f = 1.0 MHz) 2.5 MHz Small-Signal Current Gain (lc = 1.0 A, VCE = 4.0 V, f = 1 KHz , = |hfe| °ftert 2N3055.MJ2955 ACTIVE REGION SAFE OPERATING AREA(SOA) E * -Bcndng VWre Limit
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2N3055

Abstract: 2n3055 malaysia 2N3055 MJ2955 ® COMPLEMENTARY SILICON POWER TRANSISTORS s s ST PREFERRED SALESTYPES COMPLEMENTARY NPN-PNP DEVICES DESCRIPTION The 2N3055 is a silicon epitaxial-base NPN transistor in Jedec TO , Voltage (I E = 0) 2N3055 PNP Unit MJ2955 100 V V CER Collector-Emitter Voltage (R BE , Dissipation at T c 25 o C T stg Storage Temperature Tj Max. Operating Junction Temperature 15 , current values are negative. August 1998 1/4 2N3055 / MJ2955 THERMAL DATA R thj-case
STMicroelectronics
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2N3055 specification J 2N3055 t 2N3055

2N3055

Abstract: 2n3055 pin Product Specification 2N3055 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless , SavantIC Semiconductor Product Specification 2N3055 Silicon NPN Power Transistors , 150 Tstg Storage temperature -65~200 TC=25 THERMAL CHARACTERISTICS SYMBOL Rth j-c , =0.5A ; VCE=10V 2.5 MHz Is/b fT 2 70 SavantIC Semiconductor Product Specification , ) 3 2N3055 SavantIC Semiconductor Product Specification 2N3055 Silicon NPN Power
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2n3055 datasheet 2n3055 complement 2N3055 silicon 2N3055 equivalent datasheet 2n3055

2n3055

Abstract: hfe 2n3055 www.jmnic.com 2N3055 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified , =10V 2.5 MHz Is/b fT 2 70 Product Specification www.jmnic.com 2N3055 Silicon NPN , Product Specification www.jmnic.com 2N3055 Silicon NPN Power Transistors DESCRIPTION , Tstg Storage temperature -65~200 VALUE UNIT 1.52 /W TC=25 THERMAL , Product Specification www.jmnic.com 2N3055 Silicon NPN Power Transistors 4 JMnic
JMnic
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2N3055 power amplifier circuit

Abstract: 2n3055 motorola 2N3055 MJ2955 ELECTRICAL CHARACTERISTICS (T q = 25°C unless otherwise noted) Characteristic *OFF , Registration. (2N3055) (1) Pulse Test: Pulse W idth < 300 ns, Duty Cycle < 2.0%. fT 2.5 - MHz hfe 15 , MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N3055/D Com plem entary , Current Total Power Dissipation @ T q = 25°C Derate above 25 °C O perating and Storage Junction , , Junction to Case Symbol R e jc Max 1.52 Unit °C /W 0 25 50 75 100 125 150
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J2955

BUV48I

Abstract: BU808DXI 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 2N3172 2N3173 2N3174 2N3183 2N3184 , 2N3055 BUV23 2N3792 2N3792 2N3792 TIP2955 2N3792 2N3792 2N3792 TIP2955 2N3792 2N3792 TIP2955 BSS44 BSS44 2N5876 BDW51B 2N3055 BDW51B BDW51B BDW51B BDW51B 2N5336 2N5336 2N5336 2N3439 , 2N3792 2N3055 BUV23 2N3792 2N3792 2N3792 TIP2955 2N3792 2N3792 2N3792 TIP2955 2N3792 2N3792 TIP2955 BSS44 BSS44 BDW52C BDW51C 2N3055 BDW51C BDW51C BDW51C BDW51C 2N5338 2N5338 2N5338
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BUV48I BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 2N3016 2N3021 2N3185 2N3186 2N3195 2N3196

MJ2955 TRANSISTOR

Abstract: pnp transistor 2N3055 17.30 4.36 11.18 2N3055 NPN / MJ2955 PNP ELECTRICAL CHARACTERISTICS ( Tc = 25°C unless otherwise , 2.0% (2 ) f T = | K » | * f tort MHz 2.5 15 120 2N3055.MJ2955 AC TIVE REG ION SAFE O PERATING , applications FEA TU RES: * Power Dissipation - PD = 115W @ Tc = 25°C * DC Current Gain hFE = 20 ~ 70 @ lc = 4.0 A * V cE (*t) * NPN 2N3055 PNP MJ2955 11 v @ 'c = 4 0 A - 'b = 400 , Tc=25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol ^CEO ^CER VCB0
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data transistor 2n3055 2n3055 npn power transistor 2N3055M

2N3055

Abstract: 2n3055 malaysia I CEV Min . V 50 75 145 250 70 1.6 2.5 MHz 2.87 A 2N3055 TO-3 (H , 2N3055 SILICON NPN TRANSISTOR n SGS-THOMSON PREFERRED SALESTYPE DESCRIPTION The 2N3055 is , Collector Current 15 A IB Base Current 7 A o P tot T otal Dissipation at T c 25 , 115 W -65 to 200 o C 200 o C 1/4 2N3055 THERMAL DATA R thj -ca se Thermal Resistance Junction-case Max o 1.5 C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC
STMicroelectronics
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P003N 2N3055 TO-3 datasheet of ic 555 2N305 2n3055 sgs 2N3055 schematic equivalent transistor 2n3055

2n3055 transistor

Abstract: 2N3055 Current (V BE = -1.5V) Min. V 50 75 145 250 70 1.6 2.5 MHz 2.87 A 2N3055 , 2N3055 SILICON NPN TRANSISTOR s s SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR DESCRIPTION The 2N3055 is a silicon epitaxial-base NPN transistor in Jedec TO-3 metal case. It is intended , Emitter-Base Voltage (I C = 0) IC IB o P tot Total Dissipation at T c 25 C T stg Storage , Collector Current A 115 W -65 to 200 o C 200 o C 1/4 2N3055 THERMAL DATA
STMicroelectronics
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transistor 1547 b internal schematic diagram for 2n3055

2n3055

Abstract: 2N3055M NPN PNP 2N3055 MJ2955 Characteristic Symbol Rating Unit Collector-Emitter Voltage VCEO 60 V , 25 50 75 100 125 150 175 200 Tc, TEMPERATURE^) K E PIN 1.BASE 2.EMITTER COLLECTOR(CASE , 0.92 1.09 G 1.38 1.62 H 29.90 30.40 I 16.64 17.30 J 3.88 4.36 K 10.67 11.18 2N3055 NPN / MJ29S5 , = 1.0 MHz) 2.5 MHz Small-Signal Current Gain (lc = 1.0 A, VCE = 4.0 V, f = 1 KHz) 15 120 There , 300 us , Duty Cycle ^ 2.0% fT= |hf9| °ftert 2N3055.MJ2955 ACTIVE REGION SAFE OPERATING AREA(SOA) E
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2N3055MJ

2n3055 motorola

Abstract: L 3055 motorola te a b o v e 25 °C O p e ra tin g and S to ra g e J u n c tio n T e m p e ra tu re R ang e T J. Tstg , to C a se Symbol Max 1.5 2 Unit °C /W Rejc 0 25 50 75 100 125 150 , recommended choices tor future use and best overall value. © Motorola, Inc. 1995 (M) MOTOROLA 2N3055 MJ2955 ELECTRICAL CHARACTERISTICS (T q = 25°C u n le ss o th e rw is e noted) Characteristic *OFF , ) *T 2.5 - MHz hfe 15 120 - fhfe 10 - kHz P ulse Test: P ulse W
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L 3055 motorola motorola 2n3055 motorola power transistor 2N3055

pic 08m

Abstract: 2N3171 SEMELAB pic - SELECTOR GUIDE DISCRETE BI-POLAR DEVICES Type_No 2N3053SM 2N3054 2N3055 2N3055 CECC 2N3055/5 2N3055/6 2N3055/7 2N3055A 2N3055E 2N3055E CECC 2N3055E-SM 2N3055H 2N3108 2N3109 2N3110 2N3114 2N3167 2N3168 2N3169 2N3170 2N3171 2N3172 2N3173 2N3174 2N3209 2N3209AQF 2N3209CSM 2N3209DCSM 2N3209L , 15M 15M 15M 10Mz 175M Pd 0.8 25 115 115 115 115 115 115 115 115 115 115 0.8 0.8 0.8 0.8 85 85 85 , 0.8 0.8 0.8 0.8 0.3 5 5 5 5 5 5 5 25 115 1 Vceo 40 55 60 60 30 100 100 60 60 60 60 60 60 40 40 150
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OCR Scan
2N3411 T018L pic 08m 2N3055-7 2N3055-5 2N3055-6 to-53 2N3055/5 2N3055/6 2N3055/7 2N3244 2N3245 2N3250

DK53

Abstract: dk52 2N3025 2N3026 2N3055 2N3076 2N3171 2N3172 2N3173 2N3174 2N3183 2N3184 2N3185 2N3186 2N3195 , nearest preferred 2N5339 BDW52C BDW52C BDW52C BDW52C BDW52C BDW52C 2N3055 BUX98A BDW52C , BDW51C 2N3055 BDW51C BDW51C BDW51C BUX10 2N5339 2N5339 2N5339 2N3439 2N3440 BDW51C BDW51C , BDW51C BDW51C BD238 BD238 BD238 BD235 BD235 BD237 2N5339 2N5339 2N5339 2N5339 2N3055 2N3055 2N3055 2N3055 2N5038 2N5038 BDW51C BDW51C 2N5339 2N5339 2N5339 2N5339 2N5339 BSS44 BFX34
STMicroelectronics
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BUL128 DK53 dk52 2SC4977 MJE102 2SA1046 BU808DFI equivalent 2N3198 2N3202 2N3203 2N3232 2N3233 2N3235

2N3055

Abstract: MJ2955 2N3055 MJ2955 ® COMPLEMENTARY SILICON POWER TRANSISTORS s s STMicroelectronics PREFERRED SALESTYPES COMPLEMENTARY NPN-PNP DEVICES DESCRIPTION The 2N3055 is a silicon Epitaxial-Base , Value NPN V CBO Collector-Base Voltage (IE = 0) V CER V CEO V EBO 2N3055 PNP Un it , Base Current 7 A P tot T s tg Tj o T otal Dissipation at Tc 25 C Storage Temperature , types voltage and current values are negative. August 1999 1/4 2N3055 / MJ2955 THERMAL DATA
STMicroelectronics
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pin configuration transistor 2n3055

Abstract: pin out TRANSISTOR 2n3055 2N3055 NPN MJ2955 PNP SILICON PLANAR POWER TRANSISTORS TO-3 Metal Can Package General Purpose , 2N3055 NPN MJ2955 PNP SILICON PLANAR POWER TRANSISTOR TO-3 Metal Can Package ELECTRICAL , =1A, VCE=4V, f=1KHz 2.5 15 10 f hfe MAX UNITS A MHz 120 KHz *Pulse Test: Pulse Width , kgs Page 3 of 4 2N3055 NPN MJ2955 PNP Notes TO-3 Metal Can Package Disclaimer The
Continental Device India
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pin configuration transistor 2n3055 CDIL 2N3055 Transistor pin configuration transistor mj2955 transistor 2n3055 h parameters C-120 MJ2955R 291201E

2N3055 power amplifier circuit

Abstract: 2N3055 Semiconductor isc Silicon NPN Power Transistors 2N3055 ELECTRICAL CHARACTERISTICS TC=25 unless , isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2N3055 , general-purpose switching and amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER , Dissipation@TC=25 115 W TJ Junction Temperature 200 Tstg Storage Temperature -65~200 , Product IC= 0.5A ; VCE= 10V;f=1.0MHz 2.5 MHz Is/b fT CONDITIONS MIN B B isc
INCHANGE Semiconductor
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isc 2n3055 transistor 2N3055 transistor equivalent transistors 2n3055 isc MJ2955 transistor 2n3055 IC data sheet

2n3055 malaysia

Abstract: 2N3055 NPN Transistor 2N3055 SILICON NPN TRANSISTOR . STM PREFERRED SALESTYPE . NPN TRANSISTOR DESCRIPTION The 2N3055 , cto r C urrent Base C urrent Total D issipation at Tc < 25 °C Storage T em perature Max. O perating Junction T em perature V CEO V ebo lc Ib Plot Tstg Tj °c °c 1/4 June 1998 2N3055 , CHARACTERISTICS Sym bol ICEV (T e a se = 25 °C unless otherwise specified) T est C o n d itio ns Min. Typ , (sa1)* V BE* hFE* 70 1 3 1 .5 20 5 70 1.6 2.5 2.87 V V V V CE = 4 V O O > > 't > >
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OCR Scan
transistor B 892

pin configuration transistor 2n3055

Abstract: pin out TRANSISTOR 2n3055 Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company 2N3055 NPN , 2N3055 NPN MJ2955 PNP SILICON PLANAR POWER TRANSISTOR TO-3 Metal Can Package ELECTRICAL , =1A, VCE=4V, f=1KHz 2.5 15 10 f hfe MAX UNITS A MHz 120 KHz *Pulse Test: Pulse Width , kgs Page 3 of 4 2N3055 NPN MJ2955 PNP Notes TO-3 Metal Can Package Disclaimer The
Continental Device India
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mj2955

Abstract: 2N3055 MJ2955 COMPLEMENTARY SILICON POWER TRANSISTORS â  STMicroelectronics PREFERRED SALESTYPES . COMPLEMENTARY NPN-PNP DEVICES DESCRIPTION The 2N3055 is a silicon Epitaxial-Base Planar , 100Ã2) V cE O P tot Total D issipation at Tc < 25 °C Tstg S torage T em p e ra tu re , are negative. August 1999 1/4 2N3055 / MJ2955 THERMAL DATA Rthj-case Therm al R , V 1 b 20 70 5 3 MHz 2.87 A 2N3055 / MJ2955 TO-3 MECHANICAL DATA mm
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SC08820 SC08830

2n3055 pin

Abstract: 2N3055 COMSET Semiconductors 2N3055 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol , COMSET SEMICONDUCTORS 2N3055 POWER LINEAR AND SWITCHING APPLICATIONS The 2N3055 is a silicon , VCBO VCEO VCER VEBO Collector to Base Voltage Ratings Value 100 60 70 7 15 7 @ TC = 25° Derate above 25° Unit V V V V Adc Adc Watts W/°C °C °C #Collector-Emitter Voltage Collector-Emitter , CASE-TO-3 DIMENSIONS A B C D E G H L M N P Pin 1 : Pin 2 : Case : mm 25,51 38,93 30,12 17,25 10,89 11,62
Comset Semiconductors
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2N3055

Abstract: 2N6472 ) Vbe (sat) @ ic 2N3055 to-3 100 60 7 20 70 4 4 1.1 1.8 4 .4 1. 5 .8 JAN to-3 100 70 7 20 60 4 4 .75 1.4 4 . 4 1. 5 . 8 2N3055 .8 JTX to-3 100 70 7 20 60 4 4 .75 1.4 4 .4 1. 5 2N3055 , . 8 2N3238 to-3 80 80 8 9 25 12 10 3 4 10 1.3 1 1 . 8 2N3239 to-3 80 80 8 9 25 10 10 1 2 10 1.3 : 1.1 . 8 2N3240 to-3 160 160 8 9 25 10 10 1 2 10 1. 3 i 1.1 . 8 1 2N3667 to-3 50 50 5 15 60 3 8 1.6
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OCR Scan
2N6569 2N6594 2N3236 2N5412 2N5881 2N6254 2N6472 2N3055 JAN npn 60 volts 7 Amps 2N5882
Abstract: 25 50 75 100 125 150 TC, CASE TEMPERATURE (°C) 175 200 PD, POWER DISSIPATION (WATTS , '" Continuous IC 15 Adc Base Current IB 7 Adc Total Power Dissipation @ TC = 25_C Derate above 25_C PD 115 0.657 Watts W/_C TJ, Tstg â'" 65 to + 200 _C Symbol , . Complementary Silicon Power Transistors 2N3055 * PNP MJ2955 * NPN SEMICONDUCTOR TECHNICAL DATA Order this document by 2N3055/D MOTOROLA 2 Motorola Bipolar Power Transistor Device Data Motorola
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2N3055G

Abstract: MJ2955 2n3055 200 watts amplifier diagram 2N3055(NPN), MJ2955(PNP) Preferred Device Complementary Silicon Power Transistors , Total Power Dissipation @ TC = 25°C Derate Above 25°C PD 115 0.657 W W/°C TJ, Tstg - , ORDERING INFORMATION 40 Device 0 25 50 75 100 125 150 200 100 Units / Tray , -204AA 100 Units / Tray MJ2955G 0 Package 2N3055 20 TO-204AA (Pb-Free) 100 Units / Tray , overall value. 2N3055(NPN), MJ2955(PNP) Î Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ Î Î Î
ON Semiconductor
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MJ-20 TO-204AA transistor power transistor mex transistor npn 2n3055g

2N3055L-T30-Y

Abstract: UNISONIC TECHNOLOGIES CO., LTD 2N3055 NPN SILICON TRANSISTOR SILICON NPN TRANSISTORS  DESCRIPTION The UTC 2N3055 is a silicon NPN transistor in TO-3 metal case. It is intended for power , www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd 1 of 3 QW-R205-003.B 2N3055  NPN , 5.0 70 1.1 3.0 1.5 2.87 2.5 15 10 V mA mA mA mA V V V A MHz 120 kHz 2 of 3 QW-R205-003.B 2N3055 NPN SILICON TRANSISTOR UTC assumes no responsibility for
Unisonic Technologies
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2N3055L-T30-Y

2n3055 sgs

Abstract: 2n3055 SCS-THOMSON dD©oeilLIiêîi®iQ©i 2N3055 SILICON NPN TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPE . NPN TRANSISTOR DESCRIPTION The 2N3055 is a silicon epitaxial-base NPN transistor in Jedec TO , Tc < 25 °C Storage Temperature Max. Operating Junction Temperature 1 Plot T s tg T) °C °c June 1997 1/2 77 2N3055 THERMAL DATA Rthj case Thermal Resistance Junction-case Max 1.5 JC/W ELECTRICAL CHARACTERISTICS (Tease = 25 °C unless otherwise specified) Symbol IC E V Parameter < O < IO
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sgs 2n3055 TRANSISTOR L 287 A

2N3055

Abstract: 2N3235 MHz Min Max VCE (sat) VBE (sat) @ IC 2N3055 TO-3 100 60 7 20 70 4 4 1.1 1.8 4 .4 1.5 .8 JAN TO-3 100 70 7 20 60 4 4 .75 1.4 4 .4 1.5 .8 2N3055 JTX TO-3 100 70 7 20 60 4 4 .75 1.4 4 .4 1.5 .8 2N3055 2N3235 TO-3 65 55 7 20 70 4 4 1.1 1.8 4 .4 1.5 .8 2N3236 TO-3 90 90 7 17 60 4 5 1.1 1.8 5 . 5 1.1 .8 2N3238 TO-3 80 80 8 9 25 12 10 3 4 10 1.3 1 1 .8 2N3239 TO-3 80 80 8 9 25 10 10 1 2 10 1.3 l 1.1 .8 2N3240 TO-3 160 160 8 9 25 10 10 1 2 10 1.3 1 1.1 .8
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2N3235 ips 2N6253 2N6470 2N6471
Abstract: UTC 2N3055 SILICON NPN TRANSISTOR SILICON NPN TRANSISTORS The UTC 2N3055 is a silicon NPN transistor in TO-3 metal case. It is intended for power switching circuits, series and shunt regulators, output stages and high fidelity amplifiers. TO-3 ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless , 1.1 3.0 UNISONIC TECHNOLOGIES CO. LTD V 1 UTC 2N3055 SILICON NPN TRANSISTOR , 2.5 15 10 A MHz 120 UNISONIC TECHNOLOGIES CO. LTD kHz 2 Unisonic Technologies Unisonic Technologies
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Abstract: 0.8 0.8 0.8 0.8 25 2N3055 * ' , 2N3055A 2N3055E 2N3055H 2N3055/5 CECC SCREEN CECC , 0.8H 115 115 115 115 115 '2N3055/6 2N3055/7 2N3108 2N3109 2N3110 HI-REL HI-REL -
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2N3008 2N3012 2N3014 2N3019 2N3020 2N3036

DK53

Abstract: dk52 2N3025 2N3026 2N3055 2N3076 2N3171 2N3172 2N3173 2N3174 2N3183 2N3184 2N3185 2N3186 2N3195 , 2N5339 BDW52C BDW52C BDW52C BDW52C BDW52C BDW52C 2N3055 BUX98 BDW52C BDW52C BDW52C TIP2955 BDW52C BDW52C BDW52C TIP2955 BDW52C BDW52C MJ2955 BSS44 BSS44 BDW51C BDW51C 2N3055 BDW51C , 2N5339 2N5339 2N3055 2N3055 2N3055 1/35 Bipolar Transistors Cross Reference INDUSTY STANDARD , 2/35 ST REPLACEMENT ST NEAREST PREFERRED 2N3055 2N5038 2N5153 2N5154 2N5038
STMicroelectronics
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BU724AS mje2055 2n3055 replacement BUX98PI BD263 BD292 2N3419 2N3420 2N3421 2N3445 2N3446 2N3447

2N3406

Abstract: 2N3055 plastic NPN T05 AO 0.7 50-120 10/0.15 100H 0.8 2N305A HR NPN T066 55 A 25-100 A/0.5 0.8H 25 2N3055 CECC NPN T03 60 15 20rain A/A 0.8M 115 2N3055/5 HR NPN T03 30 15 lAmin A/A 0.8H 115 2N3055/6 HR NPN T03 100 15 15-70 A/A 0.8M 115 2N3055/7 HR NPN T03 100 15 15-70 A/3 0.8M 115 2N3055E CECC NPN T03 60 15 , T066 1A0 3 25-100 A/0.5 25 2N3AAA REQ NPN T039 50 1 20-60 1/0.5 200M 1 2N3AA5 REQ NPN T03 60 7.5
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2N3053 2N3053L 2N3406 2N3055 plastic 2N3444 2N3680 2n316 311M A0-120 2N311A 2N317A 2N3250A

2N3055

Abstract: 2N3055 NPN Transistor UTC 2N3055 SILICON NPN TRANSISTOR SILICON NPN TRANSISTORS The UTC 2N3055 is a silicon NPN , , output stages and high fidelity amplifiers. TO-3 ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless , Dissipation at Ta=25°C Storage Temperature Max. Operating Junction Temperature ELECTRICAL CHARACTERISTICS(Ta=25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Collector-Emitter Sustaining , 1.1 3.0 CO. LTD V 1 QW-R205-003,A UTC 2N3055 SILICON NPN TRANSISTOR PARAMETER
Unisonic Technologies
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Abstract: SILICON NPN POWER TRANSISTOR IT ¡electronics . Semelab Limited 2N3055 High Gain A t High Current. Hermetic T03 Metal package. Ideally , . Document Number 9313 Issue 2 Page 1 of 1 SILICON NPN POWER TRANSISTOR 2N3055 il^jeleçtroniçs , TRANSISTOR 2N3055 IT ¡electronics . Semelab Limited MECHANICAL DATA Dimensions in mm (inches) 25 . 1 5 (0 .99 ) 6.35 (0 .25 ) 9^15 -
OCR Scan

2n3055 curve

Abstract: 2n3055 Conditions | 25"C 1 : 1 : 1 : kV?*l â  rm nT 'VCE VCE Vff le IB Iebq Watts V V V A MIN MAX A V V V A A ma 2N3055 117 100 60 7 15 20 70 ~4~ 4 1.1 1.8 4 .4 5.0 2N6253 115 55 45 5 15 20 70 3 4 1.0 , 7 f * r O/ \j[4 t 0 0.5 I 1.S 2 2.5 3 BASE-TO-EMITTER VOLTAGE (Vâ'ž> - V TYPICAL INPUT CHARACTERISTICS FOR TYPE 2N3055 AND2N6371 CASE TEMPERATURE (Tc I , CHARACTERISTICS FOR TYPE 2N3055 AND 2N6371 COLLECTOR-TO-EMITTER VOLTAGE IVC1I 4V 0.8 < I S 0.6 t-z Ui S a
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2N30ss 00435T5 TWX-510-224-6582 H151-
Abstract: 2N3055 NPN MJ2955 PNP COMPLEMENTARY SILICON POWER TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3055 and MJ2955 are complementary silicon power transistors manufactured by the epitaxial base process, mounted in a hermetically sealed metal case , =1.0A, f=1.0kHz fT fhfe VCE=10V, IC=0.5A, f=1.0MHz VCE=4.0V, IC=1.0A, f=1.0kHz 2.5 MHz 10 , V 70 120 R1 (26-July 2013) 2N3055 NPN MJ2955 PNP COMPLEMENTARY SILICON POWER Central Semiconductor
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2N3055

Abstract: 2N3055 curve POWER TRANSISTORS PT TYPE NO. @ 25°C Watts 117 115 150 117 M A X IM U M RATINGS Ic V V V A h FE , lVct>- V TYPICAL OUTPUT CHARACTERISTICS FO RTYPE 2N3055 AND 2N6371 BASE-TO-EMITTER VOLTAGE < V M) - V TYPICAL INPUT CHARACTERISTICS FOR TYPE 2N3055 ANO 2N6371 COLLECTOR TO-EMITTER VOLTAGE < V r i , FOR TYPE 2N6254 Solid Power Corporation CASE TEMPERATURE (Tc) ^ 25< *C ·CLiSVfS MUST BE DERATED , VOLTAGE (Veti - V MAXIMUM OPERATING AREAS FOR TYPES 2N3055 AND 2N6253 1 COLIECTOR-TO-EMITTER VOLTAGE (V
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2N 6254

2N3055

Abstract: 2N3055 NPN Transistor UTC 2N3055 SILICON NPN TRANSISTOR SILICON NPN TRANSISTORS The UTC 2N3055 is a silicon NPN , , output stages and high fidelity amplifiers. TO-3 ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless , Dissipation at Ta=25°C Storage Temperature Max. Operating Junction Temperature ELECTRICAL CHARACTERISTICS(Ta=25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Collector-Emitter Sustaining , TECHNOLOGIES CO. LTD V 1 QW-R205-003,A UTC 2N3055 SILICON NPN TRANSISTOR PARAMETER SYMBOL
Unisonic Technologies
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2n3055

Abstract: 2n3055 pin °C TS Storage Temperature -65 to +200 °C Value Unit 1.52 °C/W @ TC = 25° Derate above 25° THERMAL CHARACTERISTICS Symbol RthJC Ratings Thermal Resistance, Junction to Case COMSET SEMICONDUCTORS 1/2 2N3055 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise , 2N3055 POWER LINEAR AND SWITCHING APPLICATIONS The 2N3055 is a silicon epitaxial-base NPN , CHARACTERISTICS CASE-TO-3 DIMENSIONS A B C D E G H L M N P Pin 1 : Pin 2 : Case : mm 25,51 38
Comset Semiconductors
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M8149

Abstract: 2N4355 MINIATURE DESIGN 3VA M8149 M8050 25mW 25mW 3.0 3.0 1000' 1000 - 25pA 25|iA - 400 400 , 2N3054 2N3055 1.25DX.75H-0.140Cl Hole .875D x .531H Molded Toroid P.C. MoldedToroid B E , 15 15 2000 2000 20k 20k 2N3055 2N3055 1.25DX.75H- 0.140 Cl Hole 1.25D x .75H-
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M8072 M8121 2N1305 2N414 2N1307 2N4355 Microtran M8149 Transformer M8050 tamura 2N3055 power supply circuit m8050 transformer 2N670 M8073 M8074 M8092 M8120

RCA 40636 transistor

Abstract: rca 40636 -50W 2N5493 2N5492 VCER(susl -65V hfE â  20-100 ® 2.5 A fT = 0.8 MHz min 2N3055 VCERlsusl -70V hFE â  20-70 , 2N3054 2N5298 2N344Ì 2N6478 2N5496 2N3055 2N6103 2N3442 2N3771 2N3773 2N5578 40347 VCEV(sus) = 60 V hFe , 20-80 ® 1.5 A tj = 0.8 MHz min 2N3441 VCER|5US| - 150 V hFE " 25-100 0 0.5 A fT- 1.2 MHz typ. PT - 25 W , VCERlsus]-60V hFE-80-200 e 0.5 A fT - 0.8 MHz min. PT - 25 W 2N5293 2N5294 VCERlsusl â  75 V hFE â , -220) File No.676 2N5786 VCERISUSI -45 V lc-2.5A (TO-39) File No.413E 2N5783 VrERISUSI - -45 V lc- -2.5 A (TO
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RCA 40636 transistor rca 40636 rca 2N3771 power circuit rca 40327 40636 rca 300W TRANSISTOR AUDIO AMPLIFIER ITO-391- ITO-220 ITO-2201 ITO-31 2N1482 2N5295
Abstract: Certified Manufacturer 2N3055 NPN MJ2955 PNP SILICON PLANAR POWER TRANSISTORS TO-3 Metal Can , UNITS V V mA mA mA V V Page 1 of 4 2N3055 NPN MJ2955 PNP SILICON PLANAR POWER , =0.5A, VCE=10V, f=1MHz IC=1A, VCE=4V, f=1KHz IC=1A, VCE=4V, f=1KHz 2.5 15 10 f hfe MAX , India Limited Data Sheet Page 2 of 4 2N3055 NPN MJ2955 PNP TO-3 Metal Can Package TO , Size Qty Gr Wt 17" x 11.5" x 21" 2K 27.5 kgs Page 3 of 4 2N3055 NPN MJ2955 PNP Notes Continental Device India
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Abstract: 2N3055 NPN MJ2955 PNP SILICON PLANAR POWER TRANSISTORS TO-3 Metal Can Package General Purpose , 20 5 5.0 0.7 5.0 1.1 3.0 1.5 70 UNITS V V mA mA mA V V Page 1 of 4 2N3055 , =1A, VCE=4V, f=1KHz 2.5 15 10 f hfe MAX UNITS A MHz 120 KHz *Pulse Test: Pulse Width , kgs Page 3 of 4 2N3055 NPN MJ2955 PNP Notes TO-3 Metal Can Package Disclaimer The Continental Device India
Original

2N3055

Abstract: 2n3055 voltage regulator 1.52 °C/W 1/2 2N3055 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol , 2N3055 POWER LINEAR AND SWITCHING APPLICATIONS The 2N3055 is a silicon epitaxial-base NPN , Storage Temperature 200 -65 to +200 @ TC = 25° Derate above 25° °C THERMAL CHARACTERISTICS , CHARACTERISTICS CASE-TO-3 DIMENSIONS A B C D E G H L M N P Pin 1 : Pin 2 : Case : mm 25,51 38,93 30,12 17,25 10,89 11,62 8,54 1,55 19,47 1 4,06 inches 1,004 1,53 1,18 0,68 0,43
Comset Semiconductors
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Comset Semiconductors 2-2N3055

2N3055 power amplifier circuit

Abstract: 40636 ) - 25 75 40W True Comp. 40877 (TA8323) 40844 (2N6103) 40878 (TA8326) 40635 (2N2102) 40634 (2N4036) - , (2N6292 ) 40872 (2N6111) - 40594 (2N6320) 40595 (2N5322) 40 Quasi-Comp. 40636 (2N3055) - 40594 (2N5320 , used in the stage. Type numbers in parentheses indicate the transistor-family designation. 2N3055 , > -V VBE-V 2N TYPES VCEO(sus) Vcer(suî) VCEV($us) â'¢e VCE Temp. VCF 'c >B 'c V V V A V 25 , 2N3055* 115-W Hometaxial-Base, General Purpose 60 70 90 20-70 4 4 5 30 100 1.1 4 0.4 1.8 4 2N6254 150
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2N5495 2N4063 40636 40363 200w silicon audio power transistor 200W TRANSISTOR AUDIO AMPLIFIER 40872 200W AUDIO AMP 2N6269 2N6386 TA8201 2N5840 2N5415

Transistor 2n3055

Abstract: power transistor 2n3055 TRANSISTOR 2N3055 MECHANICAL DATA Dimensions in mm (inches) 25 . 1 5 (0 .99 ) IT ¡electronics , SILICON NPN POWER TRANSISTOR 2N3055 High Gain A t High Current. Hermetic T03 Metal package , . Semelab Limited ABSOLUTE MAXIMUM RATINGS 0 a = 25°C unless otherwise stated) v CBO v CEO v , Storage Temperature Range Derate Above 25°C Derate Above 25°C 34.3mW/°C 0.67W/°C -65 to +200°C -65 , ://www.semelab-tt.com Document Number 9313 Issue 2 Page 1 of 1 SILICON NPN POWER TRANSISTOR 2N3055 ELECTRICAL
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t03 package transistor pin dimensions tr 2n3055

terminals of 2n3055

Abstract: 2n3055 ) VEBO h re Ft MHz Volts Volts Volts Mill Max VCE ic Vqe (sat) Vbe (sat) @ IC @ IB 2N3055 TO-3 100 60 7 20 70 4 4 1.1 1.8 4 .4 1. 5 .8 . 8 JAN TO-3 100 70 7 20 60 4 4 .75 1.4 4 , 4 1. 5 2N3055 JTX TO-3 100 70 7 20 60 4 4 .75 1.4 4 , 4 1. 5 . 8 2N3055 2N3235 TO-3 65 55 7 20 70 4 , 2N3238 TO-3 80 80 8 9 25 12 10 3 4 10 1.33 1.33 1.33 . 8 .8 . 8 2N3239 TO-3 80 80 8 9 25 10 10 1 2 10 , 2N3240 TO-3 160 160 8 9 25 10 10 1 2 10 . 8 2N3667 TO-3 50 50 5 15 60 3 8 1.6 2. 4 8 15 2N5412 TO
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2N4211 2N6046 terminals of 2n3055 TO111 package 2N6496 2N3597 2N3598 2N3599 2N3772 2N3848

pin configuration transistor mj2955

Abstract: pin configuration transistor 2n3055 Transys Electronics L I M I T E D 2N3055 NPN MJ2955 PNP SILICON PLANAR POWER TRANSISTORS TO-3 Metal Can Package General Purpose Switching and Amplifier Applications ABSOLUTE MAXIMUM , 20 5 5.0 0.7 5.0 1.1 3.0 1.5 70 UNITS V V mA mA mA V V 2N3055 NPN MJ2955 , =1KHz 2.5 15 10 f hfe *Pulse Test: Pulse Width
Transys Electronics
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2n3055 npn

2n3055 collector characteristic curve

Abstract: 2N3055 curve Power Transistors T-33- 1 3 File Number 2N3055 1699 HARRIS SEMICOND SECTOR 27E D , ) < 1.1 V, @ ic= 4 A, I b=0.4 A E xcellent sale operating area TERMINAL DESIGNATIONS The 2N3055 , ., 1 1 5 W (T c=25° C ) D e ra te L in e a rly a b o v e 2 5° C , Transistors 4 HHAS T~33-'3 ELECTRICAL CHARACTERISTICS, A t Case Tem perature (T c ) " \ 2N3055 , . 2-29 Power Transistors b HAS 2N3055 T ~ 3 S V3 BE(sal) C 4302271 OOl^ö
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M302271 92CS-27516
Abstract: UTC 2N3055 SILICON NPN TRANSISTOR SILICON NPN TRANSISTORS The UTC 2N3055 is a silicon NPN transistor in TO-3 metal case. It is intended for power switching circuits, series and shunt regulators, output stages and high fidelity amplifiers. TO-3 ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless , V mA mA mA 70 1.1 3.0 CO. LTD V 1 QW-R205-003,A UTC 2N3055 SILICON NPN , Forward Biased DYNAMIC CHARACTERISTICS Current Gain-Bandwidth Product fT Ic=0.5A,VCE=10V,f=1MHz 2.5 -
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J2955

Abstract: 2n3055 motorola Collector Current - Continuous Base Current Total Power Dissipation @ T c - 25°C Derate above 25 , Power Transistor Device Data 2N 3055 M J2955 ELECTRICAL CHARACTERISTICS (Tc - 25°C unless otherwise , ) * Indicates Within JEDEC Registration. (2N3055) (1) Pulse Test: Pulse Width s 300 us, Duty Cycle s 2.0%. fT h(e 2.5 15 10 - 120 MHz ls/b 2.87 hFE 20 5.0 VCE(sat) - 1.1 3.0 1.5 Vdc 70 v CEO(sus) v CER(sus , Vdc VBE(on) _ Adc - fhfe - kHz 2N3055, MJ2955 20 *· % ST 10 -1
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OCR Scan
transistor 2N 3055 2n 3055 Motorola 3055 adc 305-5 2n 3055 transistor transistor 3055 pnp
Abstract: Ìl S U ELECTR O NICS, IN C . 17 COLLECTOR CURRENT = 15 AMPS NPN TYPES Device No 2N3055 JAN 2N3055 JT X 2N3055 2N3235 2N3236 2N3238 2N3239 2N3240 2N3667 2N5412 2N5881 2N5882 2N6253 2N6254 2N6470 , GO 70 GO ?5 25 25 60 160 100 100 70 70 150 150 150 100 VCE 4 4 4 4 4 12 10 10 3 1 4 4 4 4 4 4 2 2 , 30 30 40 25 50 50 30 30 30 30 20 20 20 15 h FF . Max 120 120 120 60 60 GO vce 2 2 2 4 4 4 4 , ®JC. °C AV 1 1 1 1.2 1.2 1.2 .5 .5 1 1 1. 25 1. 25 2 2 1. 25 1 3. 33 3. 33 2 2 1 1 .9 .9 .9 1. 17 -
OCR Scan
2N3849 2N4210 2N5039 2N5313 2N5315 2N5329

B0411

Abstract: B0733 CROSS REFERENCE INDUSTRY STANDARD 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 , BDW51C BDW51C BSS44 BSS44 2N3055 BUX98 BDW52C BDW52C BDW52C TIP2955 BDW52C BDW52C BDW52C TIP2955 BDW52C BDW52C MJ2955 BSS44 BSS44 BDW51C BDW51C 2N3055 BDW51C BDW51C 8DW51C BUX10 2N5339 2N5339 2N5339 , 2NS339 2N5339 BSS44 2N4920 BD235 BD235 BD237 2N5339 2N5339 2N5339 2N5339 2N3055 2N3055 2N3055 2N3055 , 2N5886 2N3055 MJ3001 BDX87C MJ3001 2N6388 2N6388 SGS-THOMSON SGS-THOMSON REPLACEMENT NEARESTPREFERRED
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B0411 B0733 THD200F1 2N5415 REPLACEMENT TIP 2n3055 SGS-Thomson cross reference 2N3448 2N3713 2N3715 2N3716 2N3719 2N3720

pin configuration transistor 2n3055

Abstract: 2N3055 MJ2955 IL 2N3055 MJ2955 NPN POWER TRANSISTOR PNP POWER TRANSISTOR 2N3055 MJ2955 General Purpose , ,77 30,4 11,18 5,72 17,15 12,25 26,67 4,19 6.35 0,96 29,90 10,69 5.20 16,64 11,15 - PIN , emitter) Collector-emitter voltage (open base) Collector current Total power dissipation up to T c = 25 , 115 200 V V A W °C 1.1 V 20 70 RATINGS (at Ta=25"C unless otherwise specified) Limiting , voltage (R be = 100Q) VcBO v CEO VCER max. max. max. 100 V 60 V 70 V 5-1 2N3055 MJ2955
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pin configuration 2N3055 transistor

2N5296 RCA

Abstract: RCA 40373 -50W 2N5493 2N5492 VCER(susl -65V hfE â  20-100 ® 2.5 A fT = 0.8 MHz min 2N3055 VCERlsusl -70V hFE â  20-70 , 2N3054 2N5298 2N344Ì 2N6478 2N5496 2N3055 2N6103 2N3442 2N3771 2N3773 2N5578 40347 VCEV(sus) = 60 V hFe , 20-80 ® 1.5 A tj = 0.8 MHz min 2N3441 VCER|5US| - 150 V hFE " 25-100 0 0.5 A fT- 1.2 MHz typ. PT - 25 W , VCERlsus]-60V hFE-80-200 e 0.5 A fT - 0.8 MHz min. PT - 25 W 2N5293 2N5294 VCERlsusl â  75 V hFE â , -220) File No.676 2N5786 VCERISUSI -45 V lc-2.5A (TO-39) File No.413E 2N5783 VrERISUSI - -45 V lc- -2.5 A (TO
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2N5296 RCA RCA 40373 amplifier ocl 2n3055 RCA 40347 2N6262 40328 2NS296 2N6263 FE-20-100 2N6477 2N5491

rca 2n3055

Abstract: rca 40327 . BF257 Vceo(sus) = 160V h -25 min. @30mA BFT19.A.B VCEO(su.) = 200-400V hpF = 25 min. @30mA/l0V fT = , 15° C/W b. free-air radiator RftjA = 45° C/W BF258 VCE0(sus) = 250V h =25 min. r @ 30mA BFT28.A.B.C , retrofit. BF259 VCEO(SUS) = 300V h =25 min. @ 30mA 40850 VCERlsusl = 400 V hFE = 25 min. @ 750 mA tT = 15 MHz min. RCA 431# VCEOlsusl - 325 V hFE - 15 35 @ 2.5 A tf = 0 35 Ms typ. t, â  0.4 Ms typ , .413E 2N5783 VrERISUSI - -45 V lc- -2.5 A (TO-39) 413E 2N3054 VCERISUSI -60 V lc - 3 A (TO-66) File No. 527
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RCA 2N3055 transistor 2n3055 audio amplifier application note transistor RCA 528 2N3439 RCA 40327 rca RCA Transistor Class AB Audio Power Amplifier Application Note TQ-66 2N6177 2N358S 2N6213 2N6079 2N6175

RCA 40313

Abstract: RCA 528 -50W 2N5493 2N5492 VCER(susl -65V hfE â  20-100 ® 2.5 A fT = 0.8 MHz min 2N3055 VCERlsusl -70V hFE â  20-70 , 2N3054 2N5298 2N344Ì 2N6478 2N5496 2N3055 2N6103 2N3442 2N3771 2N3773 2N5578 40347 VCEV(sus) = 60 V hFe , 20-80 ® 1.5 A tj = 0.8 MHz min 2N3441 VCER|5US| - 150 V hFE " 25-100 0 0.5 A fT- 1.2 MHz typ. PT - 25 W , VCERlsus]-60V hFE-80-200 e 0.5 A fT - 0.8 MHz min. PT - 25 W 2N5293 2N5294 VCERlsusl â  75 V hFE â , to 50 kHz 10 to 60V 2N3053 2N4037 2N5321 2N5323 2N6179 2N6181 2N3054 2N5497A 2N3055 2N3772 - 60 to
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RCA 40313 RCA 528 RCA 40349 2n3773 rca 40349 2N6264 2N5490 BUX67B BUX67C 2N3583 2N3584

2N3055

Abstract: 2N3055-1 HIGH POWER TRANSISTOR NPN 2N3055 15A 115W Technical Data .designed for general-purpose , IB 7 Adc Total Power Dissipation @ TC = 25°C Derate above 25°C Operating and Storage , to case ELECTRICAL CHARACTERISTICS :[ Tc = 25 Characteristic * OFF CHARACTERISTICS , ] · · °C unless otherwise noted ] Indicates within JEDEC Registration. (2N3055) (1) Pulse Test : Pulse Width
USHA
Original
2N3055/1
Abstract: Ú j i l ELECTRO N ICS, IN C . COLLECTOR CURRENT = VCEO (sus) Volts Device No Cáse VCBO Volts Ve BO Volts 2N3055 JAN 2N3055 JTX 2N3055 2N3235 2N3236 2N3238 2N3239 2N3240 , 1. 5 .8 20 17 9 9 9 15 10 20 20 20 20 20 20 20 12 70 60 25 25 25 60 160 , .5 .5 1 1 1. 25 1. 25 2 2 1.25 10 10 20 20 60 60 30 30 80 175 120 130 80 7 7 25 50 75 150 5 5 10 5 .8 .5 1 .5 1.3 15 5 1. 5 .5 1 3.33 -
OCR Scan
2N5539 2N5658 2N5659 2N5731 2N5732 2N5957
Abstract: m I m J E L E C T R O N IC S , INC. |-17 COLLECTOR CURRENT = 15 AMPS NPN TYPES Device No 2N3055 JA N 2N3055 JT X 2N3055 2N3235 2N3236 2N3238 2N3239 2N3240 2N3667 2N5412 2N5881 2N5882 2N6253 , 1.1 1.1 1. 5 1. 5 1.1 1.1 1.5 1.17 1.4 1.4 1.4 1.25 0 0 70 60 60 70 60 25 25 25 60 160 100 100 70 , 20 20 20 20 30 30 40 25 50 50 30 30 30 30 20 20 20 15 Max 120 120 120 60 60 60 200 200 100 100 100 , 1.2 1. 2 .5 !5 1 1. 25 1. 25 2 2 1.25 1 3.33 3.33 2 2 1 1 .9 .9 .9 1.17 *t MHz 30 30 30 Q 0 .8 .8 -
OCR Scan
2N5959 2N6047 2N6048 2N6257 T0-63

2N3055

Abstract: 2N3235 ) VEBO h re Ft MHz Volts Volts Volts Mill Max VCE ic Vqe (sat) Vbe (sat) @ IC @ IB 2N3055 TO-3 100 60 7 20 70 4 4 1.1 1.8 4 .4 1. 5 .8 . 8 JAN TO-3 100 70 7 20 60 4 4 .75 1.4 4 , 4 1. 5 2N3055 JTX TO-3 100 70 7 20 60 4 4 .75 1.4 4 , 4 1. 5 . 8 2N3055 2N3235 TO-3 65 55 7 20 70 4 4 , -3 80 80 8 9 25 12 10 3 4 10 1.33 1.33 1.33 . 8 . 8 2N3239 TO-3 80 80 8 9 25 10 10 1 2 10 , 10 8 15 . 8 2N3240 TO-3 160 160 8 9 25 10 10 1 2 g 2N3667 TO-3 50 50 5 15 60 8 1.6 2. 4 2N5412 TO
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UQ43ST2

2N3238

Abstract: 2n3055 2N3055 TO-3 100 60 7 20 70 4 4 1.1 1.8 4 .4 1. 5 . 8 JAN TO-3 100 70 7 20 60 4 4 . 75 1.4 4 .4 1. 5 . 8 2N3055 JTX TO-3 100 70 7 20 60 4 4 . 75 1.4 4 .4 1. 5 . 8 2N3055 2N3235 TO , TO-3 80 80 8 9 25 12 10 3 4 10 1.33 1 . 8 2N3239 TO-3 80 80 8 9 25 10 10 1 2 10 1. 33 1.1 . 8 2N3240 TO-3 160 160 8 9 25 10 10 1 2 10 1. 33 1.1 . 8 2N3667 TO-3 50 50 5 15 60 3 8 1.6 2.4 8 .8 1.5 1 , 90 7 20 100 5 12 1 1. 8 12 1, 2 1. 25 60 2N5039 TO-3 110 75 7 20 100 5 10 1 1.8 10 1 1. 25 60
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OCR Scan

rca 40411

Abstract: RCA 40411 transistor -50W 2N5493 2N5492 VCER(susl -65V hfE â  20-100 ® 2.5 A fT = 0.8 MHz min 2N3055 VCERlsusl -70V hFE â  20-70 , 2N3054 2N5298 2N344Ì 2N6478 2N5496 2N3055 2N6103 2N3442 2N3771 2N3773 2N5578 40347 VCEV(sus) = 60 V hFe , 20-80 ® 1.5 A tj = 0.8 MHz min 2N3441 VCER|5US| - 150 V hFE " 25-100 0 0.5 A fT- 1.2 MHz typ. PT - 25 W , VCERlsus]-60V hFE-80-200 e 0.5 A fT - 0.8 MHz min. PT - 25 W 2N5293 2N5294 VCERlsusl â  75 V hFE â , -220) File No.676 2N5786 VCERISUSI -45 V lc-2.5A (TO-39) File No.413E 2N5783 VrERISUSI - -45 V lc- -2.5 A (TO
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rca 40411 RCA 40411 transistor 2N6259 RCA 2N5295 RCA 40411 transistor audio amplifier with rca 40411 2N3878 2N3879 2N5202 2N6500 2N4314

rca 40250

Abstract: RCA 40250 transistor -50W 2N5493 2N5492 VCER(susl -65V hfE â  20-100 ® 2.5 A fT = 0.8 MHz min 2N3055 VCERlsusl -70V hFE â  20-70 , 2N3054 2N5298 2N344Ì 2N6478 2N5496 2N3055 2N6103 2N3442 2N3771 2N3773 2N5578 40347 VCEV(sus) = 60 V hFe , 20-80 ® 1.5 A tj = 0.8 MHz min 2N3441 VCER|5US| - 150 V hFE " 25-100 0 0.5 A fT- 1.2 MHz typ. PT - 25 W , VCERlsus]-60V hFE-80-200 e 0.5 A fT - 0.8 MHz min. PT - 25 W 2N5293 2N5294 VCERlsusl â  75 V hFE â , -220) File No.676 2N5786 VCERISUSI -45 V lc-2.5A (TO-39) File No.413E 2N5783 VrERISUSI - -45 V lc- -2.5 A (TO
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rca 40250 RCA 40250 transistor RCA transistor 40312 40310 rca RCA 40310 40372 RCA TX2N3771 2N6212 TX2N1483 2N1489 TX2N3440

westinghouse transistors

Abstract: Westinghouse Semiconductor POüJEREX IN C TD 54-673 Page 1 i Silicon Power Transistors J E D E C T y p e 2N3055 , IV sQ X m m Application The Westinghouse 2N3055 is an NPN dif­ fused transistor. This , Westinghouse JEDEC-type silicon power semiconductors, the 2N3055 carries the Westinghouse Lifetime Guarantee , . 1.5 â'¢Power Dissipation, P j at Tc=25*C, watts, max. 115 Power Dissipation, Pt at Tc above 25*C, see figure. 1
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westinghouse transistors Westinghouse Semiconductor C/2116/DB C/2117

2N3238

Abstract: 2N3239 COLLECTOR CURRENT = 15 AMPS NPN TYPES Device No 2N3055 JAN 2N3055 JTX 2N3055 2N3235 2N3236 2N3238 2N3239 2N3240 2N3667 2N5412 2N5881 2N5882 2N6253 2N6254 2N6470 2N6471 2N64 72 2N6496 Case TO , 9 25 8 9 25 8 9 25 5 15 60 7 10 160 6 20 100 6 20 100 5 20 70 7 70 20 5 20 150 5 20 150 5 20 150 7 , 10 10 7 7 5 7 Min 40 40 40 15 15 15 40 40 20 20 20 20 30 30 40 25 50 50 30 30 30 30 20 20 20 15 , 1.33 .3 1 1 1 1, 2 1.2 1. 2 .5 1 1 1. 25 1, 25 2 2 1.25 1 3, 33 3.33 2 2 Ft MHz 30 30 30 .8 .8
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111/I
Abstract: 2N3055 m \\ SILICON NPN POWER TRANSISTOR DESCRIPTION: The 2N3055 is Designed for General Purpose Amplifier and Switching Applications. MAXIMUM RATINGS PACKAGE STYLE T O - 3 lc 15 A Ib 7.0 A L - . 6 7 5 «J I MAX. [ .1 3b MAX. T V2bQ filò -L ÏÏ SE A U N G PLANt V ce 60 V P diss 115 W @ Tc = 25 °C 1 .1 / T H* 1.197 iS f , 1.0 A f= 1.0 KHz 10 KHz f. VC = 10 V E lc = 0 .5 A f= 1.0 MHz 2.5 -
OCR Scan

RCA 2N3055 transistor

Abstract: 2N3055 RCA . BF257 Vceo(sus) = 160V h -25 min. @30mA BFT19.A.B VCEO(su.) = 200-400V hpF = 25 min. @30mA/l0V fT = , 15° C/W b. free-air radiator RftjA = 45° C/W BF258 VCE0(sus) = 250V h =25 min. r @ 30mA BFT28.A.B.C , retrofit. BF259 VCEO(SUS) = 300V h =25 min. @ 30mA 40850 VCERlsusl = 400 V hFE = 25 min. @ 750 mA tT = 15 MHz min. RCA 431# VCEOlsusl - 325 V hFE - 15 35 @ 2.5 A tf = 0 35 Ms typ. t, â  0.4 Ms typ , .413E 2N5783 VrERISUSI - -45 V lc- -2.5 A (TO-39) 413E 2N3054 VCERISUSI -60 V lc - 3 A (TO-66) File No. 527
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2N3055 RCA transistor 2N 3440 300V transistor pnp 2a 40321 RCA 40325 40327 BUX67 BUX66 2N6211 20-MH 2N6078

2N3055

Abstract: TRANSISTOR 2n3055 NPN Power Silicon Transistor 2N3055 Features · · Available in JAN, JANTX, and JANTXV per MIL-PRF , Voltage Emitter - Base Voltage Base Current Collector Current Total Power Dissipation @ TA = 25 °C (1 , Adc W °C Operating & Storage Temperature Range 1) Derate linearly @ 34.2 mW / °C for TA = 25 °C , /2011 New Product 1 2N3055 Electrical Characteristics -con't DYNAMIC Characteristics Magnitude , ton toff -6 12 s s SAFE OPERATING AREA DC Tests: Test 1: Test 2: TC = +25 °C, I Cycle, t = 1.0
Aeroflex / Metelics
Original
MIL-PRF-19500/407 888-641-SEMI

RCA 40411 transistor

Abstract: rca 40411 -50W 2N5493 2N5492 VCER(susl -65V hfE â  20-100 ® 2.5 A fT = 0.8 MHz min 2N3055 VCERlsusl -70V hFE â  20-70 , 2N3054 2N5298 2N344Ì 2N6478 2N5496 2N3055 2N6103 2N3442 2N3771 2N3773 2N5578 40347 VCEV(sus) = 60 V hFe , 20-80 ® 1.5 A tj = 0.8 MHz min 2N3441 VCER|5US| - 150 V hFE " 25-100 0 0.5 A fT- 1.2 MHz typ. PT - 25 W , VCERlsus]-60V hFE-80-200 e 0.5 A fT - 0.8 MHz min. PT - 25 W 2N5293 2N5294 VCERlsusl â  75 V hFE â , -220) File No.676 2N5786 VCERISUSI -45 V lc-2.5A (TO-39) File No.413E 2N5783 VrERISUSI - -45 V lc- -2.5 A (TO
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transistor 40411 40411 RCA 2N6254 RCA transistor 40411 transistor BDY29 transistor 2N5415

texas 2n3055

Abstract: BU108 Operating Area 2N3055 * PNP MJ2955* *Motorola Preferred Device NPN ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ , Current - Continuous Base Current 15 7 Total Power Dissipation @ TC = 25_C Derate above 25_C PD 115 0.657 , /W 160 PD, POWER DISSIPATION (WATTS) 140 120 100 80 60 40 20 0 0 25 50 75 100 125 150 TC, CASE , ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit *OFF , = 1.0 Adc, VCE = 4.0 Vdc, f = 1.0 kHz) fT 2.5 15 10 - MHz - hfe 120 - *Small­Signal Current Gain
Motorola
Original
texas 2n3055 BU108 2N5655 equivalent BU100 BDX54 2n3055 MJ15003 MJ15012 MJE15030 2N6339 2N6341 2N6497 MJ15011

2N3440 2N5416 REPLACEMENT

Abstract: 2N5954 . 2N6373 VcerISUSI -65 V hFE - 20-100 9 2.5 A fT - 4 MHz min. 2N5955 VCER(SUSI - -65 V hFE = 20-100 0 -2.5 A tj » 5 MHz mm. 2N6290 2N6291 VCER(SUSI -60 V hFE = 30-150 @ 2.5 A fj = 4 MHz min. 2N6108 2N6109 VCER(SUS> - -60 V hFE -30-150 ® -2.5 A fT = 10 MHz min. 2N6471 Vcer(â'ž,>=65V h »20-150 @ 5A f â , -2.5A (TO-39) File No.413E 2N5783 VrERISUSI - -45 V lc- -2.5 A (TO-39) 413E 2N3054 VCERISUSI -60 V lc - 3 A , .676 2N3055 VCER(SUSI - 70 V lc- 12 A (TO-31 File No. 524 2N6247 VCER(SUSI « -90V lc = â'"12 A (TO-31 File No
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2N5781 2N6372 2N5954 2N6107 2N6248 2N6488 2N3440 2N5416 REPLACEMENT 2N5294 replacement 2N6108 RCA 2N5416 REPLACEMENT 2N6490 RCA IT039I

40372

Abstract: 2N3054 -50W 2N5493 2N5492 VCER(susl -65V hfE â  20-100 ® 2.5 A fT = 0.8 MHz min 2N3055 VCERlsusl -70V hFE â  20-70 , 2N3054 2N5298 2N344Ì 2N6478 2N5496 2N3055 2N6103 2N3442 2N3771 2N3773 2N5578 40347 VCEV(sus) = 60 V hFe , 20-80 ® 1.5 A tj = 0.8 MHz min 2N3441 VCER|5US| - 150 V hFE " 25-100 0 0.5 A fT- 1.2 MHz typ. PT - 25 W , VCERlsus]-60V hFE-80-200 e 0.5 A fT - 0.8 MHz min. PT - 25 W 2N5293 2N5294 VCERlsusl â  75 V hFE â , -220) File No.676 2N5786 VCERISUSI -45 V lc-2.5A (TO-39) File No.413E 2N5783 VrERISUSI - -45 V lc- -2.5 A (TO
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40372 2N5575 2N6260 2N6261

RCA 40313

Abstract: 2N3054 -50W 2N5493 2N5492 VCER(susl -65V hfE â  20-100 ® 2.5 A fT = 0.8 MHz min 2N3055 VCERlsusl -70V hFE â  20-70 , 2N3054 2N5298 2N344Ì 2N6478 2N5496 2N3055 2N6103 2N3442 2N3771 2N3773 2N5578 40347 VCEV(sus) = 60 V hFe , 20-80 ® 1.5 A tj = 0.8 MHz min 2N3441 VCER|5US| - 150 V hFE " 25-100 0 0.5 A fT- 1.2 MHz typ. PT - 25 W , VCERlsus]-60V hFE-80-200 e 0.5 A fT - 0.8 MHz min. PT - 25 W 2N5293 2N5294 VCERlsusl â  75 V hFE â , -220) File No.676 2N5786 VCERISUSI -45 V lc-2.5A (TO-39) File No.413E 2N5783 VrERISUSI - -45 V lc- -2.5 A (TO
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2N3585 2N4240

RCA 40408 transistor

Abstract: RCA 40409 transistor -391 â'¢ ie - -2 A max. PT - 10 W max. ITO-391 * ie - 2 A max. Fj â  25 W max. (Plastic TO-5) ic , (Radial) lc - 20 A max. f>t - 140 W max. (TO-31 PT " 175W max. (TO-3) â'¢c - 25 A max. Pt - 80-12SW max , - -2.5 A (TO-39) 413E 2N3054 VCERISUSI -60 V lc - 3 A (TO-66) File No. 527 2N5955 VCER(SUS) = -65 V lc , (SUSI-40 V lc - -4-A VERSAWATT TO-220) File No.676 2N3055 VCER(SUSI - 70 V lc- 12 A (TO-31 File No. 524 , (SUSI -70 V lc = 2.5 A VERSAWATT (TO-2201 322 2N6106 2N6107 VCER(SUSI - -80 V lc - -2.5 A VERSAWATT (TO
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RCA 40408 transistor RCA 40409 transistor rca 40409 rca 40361 transistor rca 40361 RCA transistor 40409 2N6178 2N6180 2N6482 2N6354 2NS038 2N3263

rca 40411

Abstract: RCA 40411 transistor -391 â'¢ ie - -2 A max. PT - 10 W max. ITO-391 * ie - 2 A max. Fj â  25 W max. (Plastic TO-5) ic , (Radial) lc - 20 A max. f>t - 140 W max. (TO-31 PT " 175W max. (TO-3) â'¢c - 25 A max. Pt - 80-12SW max , - -2.5 A (TO-39) 413E 2N3054 VCERISUSI -60 V lc - 3 A (TO-66) File No. 527 2N5955 VCER(SUS) = -65 V lc , (SUSI-40 V lc - -4-A VERSAWATT TO-220) File No.676 2N3055 VCER(SUSI - 70 V lc- 12 A (TO-31 File No. 524 , (SUSI -70 V lc = 2.5 A VERSAWATT (TO-2201 322 2N6106 2N6107 VCER(SUSI - -80 V lc - -2.5 A VERSAWATT (TO
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BUX18 transistor RCA 40872 2n3283 40872 rca 2n3772 complement transistor RCA 383 2N5672 2N6033 SUSI-65V

RCA 528

Abstract: rca 2n3771 -50W 2N5493 2N5492 VCER(susl -65V hfE â  20-100 ® 2.5 A fT = 0.8 MHz min 2N3055 VCERlsusl -70V hFE â  20-70 , 2N3054 2N5298 2N344Ì 2N6478 2N5496 2N3055 2N6103 2N3442 2N3771 2N3773 2N5578 40347 VCEV(sus) = 60 V hFe , 20-80 ® 1.5 A tj = 0.8 MHz min 2N3441 VCER|5US| - 150 V hFE " 25-100 0 0.5 A fT- 1.2 MHz typ. PT - 25 W , VCERlsus]-60V hFE-80-200 e 0.5 A fT - 0.8 MHz min. PT - 25 W 2N5293 2N5294 VCERlsusl â  75 V hFE â , 2N6179 2N6181 2N3054 .2N5955 2N5497 2N6106 [2N3055] r|_2N6247jl L 2N3771 J 2N3772 2N5575 60 to 150
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rca 2n3771 Transistor PJ 257 2n3055 to 220 2n5415 complementary RCA 2n5496 2N3442 RCA 2N5785 2N5782 2N5784

RCA 40410

Abstract: rca 40362 -50W 2N5493 2N5492 VCER(susl -65V hfE â  20-100 ® 2.5 A fT = 0.8 MHz min 2N3055 VCERlsusl -70V hFE â  20-70 , 2N3054 2N5298 2N344Ì 2N6478 2N5496 2N3055 2N6103 2N3442 2N3771 2N3773 2N5578 40347 VCEV(sus) = 60 V hFe , 20-80 ® 1.5 A tj = 0.8 MHz min 2N3441 VCER|5US| - 150 V hFE " 25-100 0 0.5 A fT- 1.2 MHz typ. PT - 25 W , VCERlsus]-60V hFE-80-200 e 0.5 A fT - 0.8 MHz min. PT - 25 W 2N5293 2N5294 VCERlsusl â  75 V hFE â , -220) File No.676 2N5786 VCERISUSI -45 V lc-2.5A (TO-39) File No.413E 2N5783 VrERISUSI - -45 V lc- -2.5 A (TO
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RCA 40410 rca 40362 40410 RCA transistor 40406 RCA transistor 40319 transistor 40410 2N5240

NPN Transistor 2N3055

Abstract: transistor 2N3055 Silicon NPN Transistor 2N3055 Dim. Inches Millimeter Minimum Maximum Minimum Maximum Notes A _ .875 _ 22.23 Dia. B .250 .450 6.35 11.43 C .435 - 11.05 - D .038 .043 .97 1.09 Dia. E 1.177 1.197 29.90 30.40 F .655 .675 16.64 17.15 G .420 .440 10.67 11.18 H - .525 - 13.34 Rad. J , ; 466-3775 www. microsemi, com 2N3055 PARAMETER SYMBOL TEST CONDITIONS MIN MAX UNITS Baseâ'"Emitter On , Gainâ'"Bandwidth Product FT lc=0.5A,VCE=10V, f=1kHz 2.5 - MHz Small Signalâ'"Current Gain h FE lc
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transistor k 525

40363

Abstract: 2N3055 TO-3 -50W 2N5493 2N5492 VCER(susl -65V hfE â  20-100 ® 2.5 A fT = 0.8 MHz min 2N3055 VCERlsusl -70V hFE â  20-70 , 2N3054 2N5298 2N344Ì 2N6478 2N5496 2N3055 2N6103 2N3442 2N3771 2N3773 2N5578 40347 VCEV(sus) = 60 V hFe , 20-80 ® 1.5 A tj = 0.8 MHz min 2N3441 VCER|5US| - 150 V hFE " 25-100 0 0.5 A fT- 1.2 MHz typ. PT - 25 W , VCERlsus]-60V hFE-80-200 e 0.5 A fT - 0.8 MHz min. PT - 25 W 2N5293 2N5294 VCERlsusl â  75 V hFE â , -220) File No.676 2N5786 VCERISUSI -45 V lc-2.5A (TO-39) File No.413E 2N5783 VrERISUSI - -45 V lc- -2.5 A (TO
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pt 35c 40346 2N4064

2N3055

Abstract: hfe 2n3055 Data Sheet Central Semiconductor Corp. 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 â'¢ Fax: (631) 435-1824 Manufacturers of World Class Discrete Semiconductors 2N3055 NPN MJ2955 PNP COMPLEMENTARY SILICON POWER TRANSISTORS JEDEC T0-3 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR 2N3055, MJ2955 types are complementary silicon power transistors manufactured by the epitaxial base , =0.5A, f=l.OMHz 2.5 MHz fhfe Vce=/*.0V, lc=1-0A, f=1 .OkHz 10 kHz ls/b Vce=^0V, t=1.0s 2.87 A
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silicon power transistors

RCA 40250

Abstract: RCA 40250 transistor -50W 2N5493 2N5492 VCER(susl -65V hfE â  20-100 ® 2.5 A fT = 0.8 MHz min 2N3055 VCERlsusl -70V hFE â  20-70 , 2N3054 2N5298 2N344Ì 2N6478 2N5496 2N3055 2N6103 2N3442 2N3771 2N3773 2N5578 40347 VCEV(sus) = 60 V hFe , 20-80 ® 1.5 A tj = 0.8 MHz min 2N3441 VCER|5US| - 150 V hFE " 25-100 0 0.5 A fT- 1.2 MHz typ. PT - 25 W , VCERlsus]-60V hFE-80-200 e 0.5 A fT - 0.8 MHz min. PT - 25 W 2N5293 2N5294 VCERlsusl â  75 V hFE â , 2N6179 2N6181 2N3054 .2N5955 2N5497 2N6106 [2N3055] r|_2N6247jl L 2N3771 J 2N3772 2N5575 60 to 150
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Transistor 40347 st bux 40250 RCA RCA 2N4036 rca 2n1485 2N4348 RCA 2N1486 2N1483 2N1484 2N1485 2N1487

40636

Abstract: 2N3265 2N3055 FAMILY [n-p-n] (silicon) fy = 0.8 MHz min; Pj up to 150 W max DESCRIPTION h FE , V V V A V 25 150 V A A A 2N6253 115-W Hometaxial-Base, General Purpose 45 55 55 20-70 3 4 2 10 55 1 3 0.3 1.7 3 2N3055* 115-W Hometaxial-Base, General Purpose 60 70 90 20-70 4 4 5 30 100 1.1 4 , 10 500" - 450 0.5 50 t 4 t 1.3 50+ 160 25 30+ 10 1 0.03 0.006 250 25 30+ 10 i 0.03 0.006 300 25 30+ 10 1 0.03 0.006 350 â'" - 40-160 20 + 10 500" - 450 0.5 50 1 4 1 1.3 50t
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2N3265 150w class ab audio amplifier BF257-BF258-BF259 40412 2N3264 2N3266

RCA 40872

Abstract: 40629 Transistor . BF257 Vceo(sus) = 160V h -25 min. @30mA BFT19.A.B VCEO(su.) = 200-400V hpF = 25 min. @30mA/l0V fT = , 15° C/W b. free-air radiator RftjA = 45° C/W BF258 VCE0(sus) = 250V h =25 min. r @ 30mA BFT28.A.B.C , retrofit. BF259 VCEO(SUS) = 300V h =25 min. @ 30mA 40850 VCERlsusl = 400 V hFE = 25 min. @ 750 mA tT = 15 MHz min. RCA 431# VCEOlsusl - 325 V hFE - 15 35 @ 2.5 A tf = 0 35 Ms typ. t, â  0.4 Ms typ , .413E 2N5783 VrERISUSI - -45 V lc- -2.5 A (TO-39) 413E 2N3054 VCERISUSI -60 V lc - 3 A (TO-66) File No. 527
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40629 Transistor RCA 40852 rca 40594 rca 40872 transistor RCA 40594 transistor RCA 411 2N6176 2N5416 BUX67A BFT19A BFT19B
Abstract: NPN Power Silicon Transistor 2N3055 Features â'¢ Available in JAN, JANTX, and JANTXV per , Current Collector Current Total Power Dissipation @ TA = 25 °C (1) Operating & Storage Temperature Range 1) Derate linearly @ 34.2 mW / °C for TA = 25 °C Thermal Characteristics , Date: 8/26/2011 New Product 1 2N3055 Electrical Characteristics -conâ'™t DYNAMIC , AREA Test 1: TC = +25 °C, I Cycle, t = 1.0 s VCE = 7.8 Vdc, IC = 15 Adc Test 2: VCE = 70.0 Aeroflex / Metelics
Original

2n3055 complement

Abstract: 2N3055 VrERISUSI - -45 V lc- -2.5 A (TO-39) 413E 2N3054 VCERISUSI -60 V lc - 3 A (TO-66) File No. 527 2N5955 VCER , . 353 2N6110 2N6111 VCER (SUSI-40 V lc - -4-A VERSAWATT TO-220) File No.676 2N3055 VCER(SUSI - 70 V lc , -2201 676 2N5297 2N5298 VCER(SUSI -70 V lc = 2.5 A VERSAWATT (TO-2201 322 2N6106 2N6107 VCER(SUSI - -80 V lc - -2.5 A VERSAWATT (TO-220) 676 2N5491 2N5490 VCERISUSI â  50 V lc - 3 A VERSAWATT (TO-220) 353 , VCER(SUS)»-125\ lc-2A (TO-66) 2N5785 VCER(SUS! - 65 V lc - 2.5 A ITO-391 413 E 2NS782 VCER(SUS) - -65
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40852 2N3055 TO-220 2N5494 SUSI--40 2N5296 2N4347 2N4348

Ultrasonic amplifier 50w

Abstract: 2N6259 amplifier -50W 2N5493 2N5492 VCER(susl -65V hfE â  20-100 ® 2.5 A fT = 0.8 MHz min 2N3055 VCERlsusl -70V hFE â  20-70 , 2N3054 2N5298 2N344Ì 2N6478 2N5496 2N3055 2N6103 2N3442 2N3771 2N3773 2N5578 40347 VCEV(sus) = 60 V hFe , 20-80 ® 1.5 A tj = 0.8 MHz min 2N3441 VCER|5US| - 150 V hFE " 25-100 0 0.5 A fT- 1.2 MHz typ. PT - 25 W , VCERlsus]-60V hFE-80-200 e 0.5 A fT - 0.8 MHz min. PT - 25 W 2N5293 2N5294 VCERlsusl â  75 V hFE â , to 50 kHz 10 to 60V 2N3053 2N4037 2N5321 2N5323 2N6179 2N6181 2N3054 2N5497A 2N3055 2N3772 - 60 to
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Ultrasonic amplifier 50w 2N6259 amplifier 2n377 2n3773 power Amplifier BDY29 BDY37

rca 2n6103

Abstract: 2N6101 rca -50W 2N5493 2N5492 VCER(susl -65V hfE â  20-100 ® 2.5 A fT = 0.8 MHz min 2N3055 VCERlsusl -70V hFE â  20-70 , 2N3054 2N5298 2N344Ì 2N6478 2N5496 2N3055 2N6103 2N3442 2N3771 2N3773 2N5578 40347 VCEV(sus) = 60 V hFe , 20-80 ® 1.5 A tj = 0.8 MHz min 2N3441 VCER|5US| - 150 V hFE " 25-100 0 0.5 A fT- 1.2 MHz typ. PT - 25 W , VCERlsus]-60V hFE-80-200 e 0.5 A fT - 0.8 MHz min. PT - 25 W 2N5293 2N5294 VCERlsusl â  75 V hFE â , TYPES le>2A max. Pf " 25 W max. (Plastic TO-51 IC*-2A max. Py - 25 W max. (Plastic TO-51 lc-l A max. Py
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rca 2n6103 2N6101 rca 2N6476 rca Transistor rca 40250 2N6474 JAN Bf 353

2N6178

Abstract: 2n5578 -391 â'¢ ie - -2 A max. PT - 10 W max. ITO-391 * ie - 2 A max. Fj â  25 W max. (Plastic TO-5) ic , (Radial) lc - 20 A max. f>t - 140 W max. (TO-31 PT " 175W max. (TO-3) â'¢c - 25 A max. Pt - 80-12SW max , - -2.5 A (TO-39) 413E 2N3054 VCERISUSI -60 V lc - 3 A (TO-66) File No. 527 2N5955 VCER(SUS) = -65 V lc , (SUSI-40 V lc - -4-A VERSAWATT TO-220) File No.676 2N3055 VCER(SUSI - 70 V lc- 12 A (TO-31 File No. 524 , (SUSI -70 V lc = 2.5 A VERSAWATT (TO-2201 322 2N6106 2N6107 VCER(SUSI - -80 V lc - -2.5 A VERSAWATT (TO
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Transistor 2n6099 2N2016 transistor RCA 41013 Rca 40874 RCA 2N5321 BD242 T0-220AB BD242A T0220 BD242B T0-220

40410

Abstract: hFE-80-200 -50W 2N5493 2N5492 VCER(susl -65V hfE â  20-100 ® 2.5 A fT = 0.8 MHz min 2N3055 VCERlsusl -70V hFE â  20-70 , 2N3054 2N5298 2N344Ì 2N6478 2N5496 2N3055 2N6103 2N3442 2N3771 2N3773 2N5578 40347 VCEV(sus) = 60 V hFe , 20-80 ® 1.5 A tj = 0.8 MHz min 2N3441 VCER|5US| - 150 V hFE " 25-100 0 0.5 A fT- 1.2 MHz typ. PT - 25 W , VCERlsus]-60V hFE-80-200 e 0.5 A fT - 0.8 MHz min. PT - 25 W 2N5293 2N5294 VCERlsusl â  75 V hFE â , -220) File No.676 2N5786 VCERISUSI -45 V lc-2.5A (TO-39) File No.413E 2N5783 VrERISUSI - -45 V lc- -2.5 A (TO
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hFE-80-200 pnp darlington to-220 10a 2n6a BUX 115

RCA 40313

Abstract: 40322 RCA . BF257 Vceo(sus) = 160V h -25 min. @30mA BFT19.A.B VCEO(su.) = 200-400V hpF = 25 min. @30mA/l0V fT = , 15° C/W b. free-air radiator RftjA = 45° C/W BF258 VCE0(sus) = 250V h =25 min. r @ 30mA BFT28.A.B.C , retrofit. BF259 VCEO(SUS) = 300V h =25 min. @ 30mA 40850 VCERlsusl = 400 V hFE = 25 min. @ 750 mA tT = 15 MHz min. RCA 431# VCEOlsusl - 325 V hFE - 15 35 @ 2.5 A tf = 0 35 Ms typ. t, â  0.4 Ms typ , .413E 2N5783 VrERISUSI - -45 V lc- -2.5 A (TO-39) 413E 2N3054 VCERISUSI -60 V lc - 3 A (TO-66) File No. 527
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40322 RCA 40318 RCA RCA413 RCA Transistor "Audio Power Amplifier" Application Note

RCA 40636 transistor

Abstract: rca 40636 . BF257 Vceo(sus) = 160V h -25 min. @30mA BFT19.A.B VCEO(su.) = 200-400V hpF = 25 min. @30mA/l0V fT = , 15° C/W b. free-air radiator RftjA = 45° C/W BF258 VCE0(sus) = 250V h =25 min. r @ 30mA BFT28.A.B.C , retrofit. BF259 VCEO(SUS) = 300V h =25 min. @ 30mA 40850 VCERlsusl = 400 V hFE = 25 min. @ 750 mA tT = 15 MHz min. RCA 431# VCEOlsusl - 325 V hFE - 15 35 @ 2.5 A tf = 0 35 Ms typ. t, â  0.4 Ms typ , ] L2N4036J 2N1482 2N5321 2N5323 2N6179 2N6181 2N3054 .2N5955 2N5497 2N6106 [2N3055] r|_2N6247jl L 2N3771
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rca 40363 RCA 40321 rca 40412 RCA411 2N3772 RCA RCA 410

RCA transistor 40410

Abstract: RCA transistor 40319 ) - Quasi-Comp. - - 40360 (2N2102) - 25 75 40W True Comp. 40877 (TA8323) 40844 (2N6103) 40878 , Quasi-Comp. 40636 (2N3055) - 40594 (2N5320) 40595 (2N5322) - 40999 (2N5415) 40999 (2N5415) 80 180W 120W , 2N3054 2N5497A 2N3055 2N3772 - 60 to 150V 2N1486 2N2102 2N4036 2N1486 2N3441 2N5298 2N5781 2N5784 , ] L2N4036J 2N1482 2N5321 2N5323 2N6179 2N6181 2N3054 .2N5955 2N5497 2N6106 [2N3055] r|_2N6247jl L 2N3771 , / 2N1479 207 TX2N1485 180 2N3055 407 TX2N3584 384 2N5039 439 2N1480 207 2 N1486 180 TX2N3055 407 2N3585
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RCA transistor 40410 rca 40634 RCA 40595 transistor 40410 Transistor 40391 RCA TRANSISTOR 40391 2N6510 2N6308 BUX18 2N6306 BUX17 VCER-175V

RCA Transistor Class AB Audio Power Amplifier Application Note

Abstract: 2n3055 audio amplifier application note . BF257 Vceo(sus) = 160V h -25 min. @30mA BFT19.A.B VCEO(su.) = 200-400V hpF = 25 min. @30mA/l0V fT = , 15° C/W b. free-air radiator RftjA = 45° C/W BF258 VCE0(sus) = 250V h =25 min. r @ 30mA BFT28.A.B.C , retrofit. BF259 VCEO(SUS) = 300V h =25 min. @ 30mA 40850 VCERlsusl = 400 V hFE = 25 min. @ 750 mA tT = 15 MHz min. RCA 431# VCEOlsusl - 325 V hFE - 15 35 @ 2.5 A tf = 0 35 Ms typ. t, â  0.4 Ms typ , .413E 2N5783 VrERISUSI - -45 V lc- -2.5 A (TO-39) 413E 2N3054 VCERISUSI -60 V lc - 3 A (TO-66) File No. 527
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2n5416 rca ic 40538 BFT28A BFT28B BFT28C

2N3055

Abstract: 40327 -50W 2N5493 2N5492 VCER(susl -65V hfE â  20-100 ® 2.5 A fT = 0.8 MHz min 2N3055 VCERlsusl -70V hFE â  20-70 , 2N3054 2N5298 2N344Ì 2N6478 2N5496 2N3055 2N6103 2N3442 2N3771 2N3773 2N5578 40347 VCEV(sus) = 60 V hFe , 20-80 ® 1.5 A tj = 0.8 MHz min 2N3441 VCER|5US| - 150 V hFE " 25-100 0 0.5 A fT- 1.2 MHz typ. PT - 25 W , VCERlsus]-60V hFE-80-200 e 0.5 A fT - 0.8 MHz min. PT - 25 W 2N5293 2N5294 VCERlsusl â  75 V hFE â , . BD278A VCER(sus) = 55 V hFE " 30min ® 2A 668 2 2N3055 FAMILY [n-p-n
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BDY71 2N3439 complementary

2N3055 TO-220

Abstract: 2N3055, TO5 VrERISUSI - -45 V lc- -2.5 A (TO-39) 413E 2N3054 VCERISUSI -60 V lc - 3 A (TO-66) File No. 527 2N5955 VCER , . 353 2N6110 2N6111 VCER (SUSI-40 V lc - -4-A VERSAWATT TO-220) File No.676 2N3055 VCER(SUSI - 70 V lc , -2201 676 2N5297 2N5298 VCER(SUSI -70 V lc = 2.5 A VERSAWATT (TO-2201 322 2N6106 2N6107 VCER(SUSI - -80 V lc - -2.5 A VERSAWATT (TO-220) 676 2N5491 2N5490 VCERISUSI â  50 V lc - 3 A VERSAWATT (TO-220) 353 , VCER(SUS)»-125\ lc-2A (TO-66) 2N5785 VCER(SUS! - 65 V lc - 2.5 A ITO-391 413 E 2NS782 VCER(SUS) - -65
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BUX66C 2N3055, TO5 complementary-pair to31 2N3055 TO220 40250 ITO-661 2N6468 SUSI--350V

40629 Transistor

Abstract: transistor 2n5321 rca -391 â'¢ ie - -2 A max. PT - 10 W max. ITO-391 * ie - 2 A max. Fj â  25 W max. (Plastic TO-5) ic , (Radial) lc - 20 A max. f>t - 140 W max. (TO-31 PT " 175W max. (TO-3) â'¢c - 25 A max. Pt - 80-12SW max , - -2.5 A (TO-39) 413E 2N3054 VCERISUSI -60 V lc - 3 A (TO-66) File No. 527 2N5955 VCER(SUS) = -65 V lc , (SUSI-40 V lc - -4-A VERSAWATT TO-220) File No.676 2N3055 VCER(SUSI - 70 V lc- 12 A (TO-31 File No. 524 , (SUSI -70 V lc = 2.5 A VERSAWATT (TO-2201 322 2N6106 2N6107 VCER(SUSI - -80 V lc - -2.5 A VERSAWATT (TO
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transistor 2n5321 rca RCA 40622 transistor 1c1a 2n5298 40629 2n3442 us

RCA 40250 transistor

Abstract: 40629 Transistor -391 â'¢ ie - -2 A max. PT - 10 W max. ITO-391 * ie - 2 A max. Fj â  25 W max. (Plastic TO-5) ic , (Radial) lc - 20 A max. f>t - 140 W max. (TO-31 PT " 175W max. (TO-3) â'¢c - 25 A max. Pt - 80-12SW max , - -2.5 A (TO-39) 413E 2N3054 VCERISUSI -60 V lc - 3 A (TO-66) File No. 527 2N5955 VCER(SUS) = -65 V lc , (SUSI-40 V lc - -4-A VERSAWATT TO-220) File No.676 2N3055 VCER(SUSI - 70 V lc- 12 A (TO-31 File No. 524 , (SUSI -70 V lc = 2.5 A VERSAWATT (TO-2201 322 2N6106 2N6107 VCER(SUSI - -80 V lc - -2.5 A VERSAWATT (TO
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40872 transistor rca 40871 transistor SILICON TRANSISTOR 2N3053

2N3055 transistor equivalent to220

Abstract: 12v 10A car battery charger wiring diagram 2.5 2 1.5 1 0.5 0 13 20 30 40 RCL(K) 47 5/24 AN932 APPLICATION NOTE Figure 12 , ; TJ = 25°C dt 11/24 AN932 APPLICATION NOTE Figure 22. Test condition: VIN =6. 5V, VOUT = 5V; Load Transient from 0.5A to 5A; dIout = 20A / µs; TJ = 25°C dt 12/24 Figure 23. Test condition: VIN =6. 5V, VOUT = 5V; Load Transient from 0.5A to 5A; dIout = 1A / µs; TJ = 25°C dt , , C1 = 330nF and R1 = 68k the soft-start time of the output is about 4R1C1 90ms (see fig. 25). The
STMicroelectronics
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2N3055 transistor equivalent to220 12v 10A car battery charger wiring diagram 2N3055 equivalent mosfet 2N3055 pin out connections smd transistor 2N3055 2n3055 use in battery charger L4955

BDX33C darlington pair

Abstract: 40349 -50W 2N5493 2N5492 VCER(susl -65V hfE â  20-100 ® 2.5 A fT = 0.8 MHz min 2N3055 VCERlsusl -70V hFE â  20-70 , 2N3054 2N5298 2N344Ì 2N6478 2N5496 2N3055 2N6103 2N3442 2N3771 2N3773 2N5578 40347 VCEV(sus) = 60 V hFe , 20-80 ® 1.5 A tj = 0.8 MHz min 2N3441 VCER|5US| - 150 V hFE " 25-100 0 0.5 A fT- 1.2 MHz typ. PT - 25 W , VCERlsus]-60V hFE-80-200 e 0.5 A fT - 0.8 MHz min. PT - 25 W 2N5293 2N5294 VCERlsusl â  75 V hFE â , 2N6179 2N6181 2N3054 .2N5955 2N5497 2N6106 [2N3055] r|_2N6247jl L 2N3771 J 2N3772 2N5575 60 to 150
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BDX33C darlington pair 2N3773 transistor RCA transistor 2n3055 RCA 2N5322 2N6537 BDX33 BDX34 BDX34A BDX34B

RCA 40872

Abstract: 40629 Transistor . BF257 Vceo(sus) = 160V h -25 min. @30mA BFT19.A.B VCEO(su.) = 200-400V hpF = 25 min. @30mA/l0V fT = , 15° C/W b. free-air radiator RftjA = 45° C/W BF258 VCE0(sus) = 250V h =25 min. r @ 30mA BFT28.A.B.C , retrofit. BF259 VCEO(SUS) = 300V h =25 min. @ 30mA 40850 VCERlsusl = 400 V hFE = 25 min. @ 750 mA tT = 15 MHz min. RCA 431# VCEOlsusl - 325 V hFE - 15 35 @ 2.5 A tf = 0 35 Ms typ. t, â  0.4 Ms typ , .413E 2N5783 VrERISUSI - -45 V lc- -2.5 A (TO-39) 413E 2N3054 VCERISUSI -60 V lc - 3 A (TO-66) File No. 527
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RCA 40635

MJ3001 equivalent

Abstract: MJ3000 equivalent MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ2955 (See 2N3055) MJ2955A (See 2N3055A) Medium-Power , Voltage Emitter­Base Voltage Collector Current Base Current 5.0 10 0.2 Total Device Dissipation @ TC = 25_C Derate above 25_C PD 150 0.857 Watts W/_C Operating and Storage Junction Temperature Range TJ, Tstg ­ 55 , ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic OFF CHARACTERISTICS Symbol Min , 0.1 0.2 0.5 1.0 2.0 IC, COLLECTOR CURRENT (AMP) 5.0 10 ­ 55°C VCE = 3.0 Vdc 25°C TJ = 150°C hFE
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MJ2501 MJ3001 equivalent MJ3000 equivalent 2sc1096 equivalent MJ3000 circuit BU326 MJ2500 MJ3000 MJ15016 BU208A MJE16106

equivalent transistor TIP3055

Abstract: BD4185 Current 7.0 Total Power Dissipation @ TC = 25_C Derate above 25_C Operating and Storage Junction , 4.0 V TJ = 25°C 100 TIP3055 TIP2955 10 0.1 0.2 0.3 2.0 3.0 0.5 0.7 1.0 IC, COLLECTOR , ÎÎÎÎ ÎÎÎ v TIP3055 TIP2955 Max Unit ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted , , f = 1.0 MHz) Small­Signal Current Gain (VCE = 4.0 Vdc, IC = 1.0 Adc, f = 1.0 kHz) fT 2.5 15 , additional design curves, refer to electrical characteristics curves of 2N3055. 100 IC, COLLECTOR CURRENT
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equivalent transistor TIP3055 BD4185 2SC1237 TIP2955 application note BD139.10 2SC1419 MJ16012 MJ10009 TIP101 TIP102 TIP106 TIP107

BU108

Abstract: C 3883 ) - TIP112, TIP117 · Low Collector­Emitter Saturation Voltage - VCE(sat) = 2.5 Vdc (Max) @ IC = 2.0 , Power Dissipation @ TC = 25_C Derate above 25_C Total Power Dissipation @ TA = 25_C Derate above 25_C Unclamped Inductive Load Energy - Figure 13 Operating and Storage Junction PD PD E 50 0.4 2.0 0.016 25 TJ , THERMAL CHARACTERISTICS Characteristics Symbol RJC RJA Max 2.5 Unit Thermal Resistance , (TC = 25_C unless otherwise noted) OFF CHARACTERISTICS Symbol Min Max Unit
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C 3883 MOTOROLA TIP115 transistor transistor cross reference bu180 2SC7 bu180 2N6254 REPLACEMENT TIP110 TIP115 TIP111 TIP116 220AB TIP31C

IR642

Abstract: 2SD375 4.0 8.0 1.0 Collector Current - Continous - Peak Base Current Total Power Dissipation @ TC = 25°C Derate Above 25_C Operating and Storage Junction Temperature Range PD 15 0.12 Watts W/_C TJ, Tstg ­ 65 to , ÎÎÎÎ ÎÎÎ BD787 BD788 Max Unit *ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted , 3.0 Vdc) hFE - 40 25 20 5.0 - - - - - - 250 - - - 0.4 0.6 0.8 2.5 2.0 1.8 , v 2.0%. 25 µs + 11 V 0 ­ 9.0 V tr, tf 10 ns DUTY CYCLE = 1.0% RB + 30 V VCC RC SCOPE 500
Motorola
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IR642 2SD375 2N6410 2SC931 IR3001 MJ15004 225AA TIP32C TIP120 TIP121 TIP122 TIP125

2N3055 equivalent transistor NUMBER

Abstract: MJE350 equivalent ) Base Current - Continuous Peak(1) 1.5 2.5 Total Power Dissipation @ TC = 25_C @ TC = 100_C Derate above 25_C 80 32 0.64 Watts W/_C Operating and Storage Junction Temperature Range TJ, Tstg ­ 65 to + 150 , ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ MJE1320 Unit ELECTRICAL CHARACTERISTICS (TC = 25 , _C) Emitter Cutoff Current (VEB = 9 Vdc, IC = 0) mAdc - - - - - - 0.25 2.5 0.25 IEBO , (1) DC Current Gain (VCE = 5 Vdc) IC = 2 Adc IC = 1 Adc hFE 2.5 3 - - - - - -
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MJE350 equivalent bd139 equivalent transistor 2n6284 equivalent TIP152 equivalent bd139 equivalent MJE371 equivalent TIP126 TIP127 TIP73B TIP74 TIP74A TIP74B

2N5657 equivalent

Abstract: BU108 Continuous Peak Base Current 0.25 Total Power Dissipation @ TC = 25_C Derate above 25_C Operating and Storage , 50 mH 20 Hg RELAY X 200 TO SCOPE + 6.0 V Y + 50 V ­ 10 300 1.0 0 25 50 75 , 2N5656 2N5657 *ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic OFF , ) IEBO hFE µAdc - ON CHARACTERISTICS 25 30 15 5.0 - - - - - 250 - - 1.0 2.5 10 1.0 - - Collector­Emitter Saturation Voltage (1) (IC = 100 mAdc, IB = 10 mAdc) (IC = 250 mAdc, IB = 25 mAdc) (IC = 500 mAdc
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2N5657 equivalent 2N3792 application notes tip47 419 2SC2331 Y 2N5655 TIP75 TIP75A TIP75B TIP75C 2N6490

TIP42C as regulator

Abstract: BU108 Excellent Saturation Voltage Characteristic, 0.2 Volts Maximum at 1.0 Amp MAXIMUM RATINGS (TC = 25°C Unless , @ TC = 25°C Derate above 25°C Operating and Storage Temperature Symbol VCEO VCB VEB IC ICM IB PD TJ , ­220AB ELECTRICAL CHARACTERISTICS (TC = 25°C Unless Otherwise Noted) Characteristic OFF CHARACTERISTICS , ELECTRICAL CHARACTERISTICS - continued (TC = 25°C Unless Otherwise Noted) Characteristic ON CHARACTERISTICS , (VOLTS) TJ = 25°C 10 IB = 20 mA 50 mA 1 fT 5.0 11.5 - MHz VBE(sat) - - - hFE 100 100 75 80 45 45 VBE
Motorola
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TIP42C as regulator MOTOROLA MJ15024 Mj21194 2SB56 2SC1943 2SD675 MJE1123 2N6491 MJE13005 TIPL752 TIPL752A TIPL753

pin configuration transistor bd140

Abstract: 2SD669 equivalent Collector Current Base Current VEBO IC IB Vdc Adc Adc 1.5 0.5 Total Device Dissipation@ TA = 25_C Derate above 25_C PD PD 1.25 10 12.5 100 Watts mW/_C Total Device Dissipation @ TC = 25_C Derate above 25 , ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ x x BD136 BD138 BD140 BD140-10 ELECTRICAL CHARACTERISTICS (TC = 25 , = 2 V) ALL hFE* 25 40 63 25 - - - 250 160 - 0.5 1 ALL BD140­10 (IC = 0.5 A, VCE = 2 V , typ 2.75(3) 2.75(3) 0.6 1.5 typ 1.7(3) 4 1.7(3) 2.75(3) 2.5(3) 3.2(3) 0.5 typ 1 typ 3 2.5(3) 2.75(3
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pin configuration transistor bd140 2SD669 equivalent BUV44 bd140 equivalent transistor MJE15020 bd140 equivalent TIPL753A TIPL755 TIPL755A TIPL760 TIPL760A MJ16110

tip3055 equivalent

Abstract: IC 3526 Voltage Collector Current Base Current Total Device Dissipation TC = 25_C Derate above 25_C Operating and , , Junction to Case 1.92 _C/W ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted , , COLLECTOR­EMITTER VOLTAGE (VOLTS) 2.0 1.6 IC = 10 mA 100 mA 1.0 A 3.0 A 1.2 0.8 TJ = 25 , , COLLECTOR CURRENT (AMPS) 1.0 D = 0.5 0.5 0.3 0.2 D = 0.1 D = 0.2 150°C 25°C ­ 55°C VCE = 2.0 V V, VOLTAGE (VOLTS) 1.7 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 2.0 3.0 4.0 VBE(sat) @ IC/IB = 10 TJ = 25°C VBE @ VCE =
Motorola
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tip3055 equivalent IC 3526 transistor MJ15024 RCA1C13 2N3791 equivalent 2N6277 applications BD802 MJ16010 MJE16002

TIP36

Abstract: BD413 Collector­Emitter Voltage - VCEO = 200 Volts · DC Current Gain Specified @ 1.0 and 2.5 Adc · Low Collector­Emitter , , Junction to Case 0.75 _C/W ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted , 5.0 Vdc) (IC = 2.5 Adc, VCE = 5.0 Vdc) IEBO hFE ON CHARACTERISTICS 30 10 - - 90 - , Bandwidth Product (IC = 200 mAdc, VCE = 10 Vdc, f = 1.0 MHz) fT 2.5 - MHz Motorola Bipolar , 3.0 5.0 TJ = 150°C VCE = 5.0 Vdc V, VOLTAGE (VOLTS) 2.0 TJ = 25°C 1.6 VCE(sat) @ IC/IB = 10 1.2 VBE
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TIP36 BD413 2SC331 2sc2159 BD419 2SD364 MJ410

BDV65B equivalent

Abstract: BU108 Collector Current - Continuous - Peak Base Current 0.5 Total Device Dissipation @ TC = 25_C Derate above 25_C PD 125 1.0 Watts W/_C Operating and Storage Junction Temperature Range TJ, Tstg ­ 65 to + 150 , 0.4 0.2 0 0 25 50 100 75 TC, CASE TEMPERATURE (°C) 125 150 Figure 1. Power , Adc) Base­Emitter Saturation Voltage (IC = 5.0 Adc, VCE = 4.0 Vdc) VCE(sat) VBE(on) 2.0 2.5 , CURRENT (A) 20 10 5 SECONDARY BREAKDOWN LIMITED @ TJ 150°C THERMAL LIMIT @ TC = 25°C BONDING WIRE LIMIT dc
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BDV65B equivalent buv48 equivalent tip127 pin details mje340 2SD424 BDV65B BDV64B

BU108

Abstract: 2N3055 Watts W/_C Total Power Dissipation @ TC = 25_C Derate above 25_C Operating and Storage Junction , ÎÎÎÎ ÎÎÎ MJE3439 Unit ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted , Small­Signal Current Gain (IC = 5.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) 25 IC, COLLECTOR CURRENT (AMP , 2.75(3) 2.75(3) 0.6 1.5 typ 1.7(3) 4 1.7(3) 2.75(3) 2.5(3) 3.2(3) 0.5 typ 1 typ 3 2.5(3) 2.75(3) - 0.5 , 2.5 1 2 3 3 2 3 5 2 2 - 5 13 typ 12 14 typ 14 typ 4 30 4 14 typ 13 typ 2 40 20(1) 12 8 fT MHz Min 10
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Mje350 TRANSISTOR BC 208 2SB527

TOSHIBA 2N3055

Abstract: 2n3055 toshiba 56C 08010 Q~f~33~/3 SILICON NPN TRIPLE DIFFUSED TYPE_ 2N3055 U n i , (Tc=25°C) D e r a t e Linearly * Junction Temper a t u r e : k Storage Temper at ur e R a n g e C H A , CHARACTERISTICS (Ta=25°C) T E S T CONDITION ICEX · V C E =100V, V b E=-1-5V ICEX ICEO lEBO W e i g h t : 1 2 . , Current Gain 20 kHz V ç e = 4V, IC =1A, f=10kHz ^hf e Cut-off Frequency 2.5 V c e =4V, I c = 1A, f=lMHz 1h , GDÜflGll 9097250 TOSHIBA t>öC Ö8ÖT1 33-/3 2N3055 Ic " V
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TOSHIBA 2N3055 2n3055 toshiba 2n3055 npn transistor toshiba 2n3055 regulator 10a 2N3055 H TOSHIBA 0400115

motorola 415 D2PAK

Abstract: 380 darlington to3 ibm Reproductible Parameter Spreads POWER TRANSISTORS 2 AMPERES 700 VOLTS 25 WATTS CASE 369­07 , Current - Peak (1) *Total Device Dissipation @ TC = 25_C *Derate above 25°C Operating and Storage Temperature 25 0.2 Watt W/_C TJ, Tstg ­ 65 to 150 It's characteristics make it also suitable for PFC , ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25°C unless , Voltage (IC = 100 mA, L = 25 mH) Collector­Base Breakdown Voltage (ICBO = 1 mA) Emitter­Base Breakdown
Motorola
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motorola 415 D2PAK 380 darlington to3 ibm transistor bc 647 2N5886 Structure 3427 726 MOTOROLA TRANSISTORS BUD44D2

2SA1046

Abstract: BUL1 Continuous Base Current - Peak (1) *Total Device Dissipation @ TC = 25_C *Derate above 25°C Operating and , Thermal Resistance - Junction to Case - Junction to Ambient _C/W RJC RJA TL 2.5 100 Maximum , ÎÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Symbol Min Typ Max Unit Collector­Emitter Sustaining Voltage (IC = 100 mA, L = 25 mH) Collector­Base , µAdc Collector Cutoff Current (VCE = Rated VCES, VEB = 0) @ TC = 25°C @ TC = 125°C @ TC = 25°C @ TC =
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BUL1 BDV64 transistor bc 851 NPN POWER DARLINGTON TRANSISTORS high voltage high ICM TO-247 2N6107 equivalent BUH51

BUT34 equivalent

Abstract: 2N3055 Inverters Solenoid and Relay Drivers Fast Turn­Off Times 0.7 µs Inductive Fall Time at 25_C (Typ) 1.8 µs Inductive Storage Time at 25_C (Typ) · Operating Temperature Range ­ 65 to 200_C MAXIMUM RATINGS · · · · · , Power Dissipation @ TC = 25_C @ TC = 100_C Derate above 25_C 250 140 Watts W/_C Operating and Storage , Unit ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic OFF , ) Vdc - - - - - - - - 2.5 2.9 3.3 4.0 Vf Vdc SWITCHING CHARACTERISTICS
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BUT34 equivalent BU323A equivalent motorola diode cross reference bc 574 transistor f tip42c BUV22 equivalent BUT34 204AE

Transistor 2sC1060

Abstract: 2SC143 Dissipation @ TC = 25_C Derate above 25_C PD 85 0.68 Watts W/_C Operating and Storage Junction Temperature , ) 80 70 60 50 40 30 20 10 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (°C) Figure 1. Power , BDW46 BDW47 Min Max Unit ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted , 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.1 VCC = 30 V IC/IB = 250 IB1 = IB2 TJ = 25°C 0.2 tr tf ts [ [ V1 APPROX 25 µs ­ 12 V tr, tf 10 ns DUTY CYCLE = 1.0% + 4.0 V for td and tr, D1 id disconnected
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Transistor 2sC1060 2SC143 2SD460 All similar transistor 2sa715 BUT56 BU208 BDW42/BDW47 BDW42

BD791 equivalent

Abstract: Transistor BC 3199 @ TC = 25_C Derate above 25_C Operating and Storage Junction Temperature Range PD 15 0.12 Watts W/_C , 25_C unless otherwise noted) Characteristic OFF CHARACTERISTICS Symbol Collector­Emitter , 0.5 1.0 2.5 3.0 1.8 1.5 Base­Emitter Saturation Voltage (IC = 2.0 Adc, IB = 200 mAdc) Base­Emitter , * Indicates JEDEC Registered Data. (1) Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%. 25 µs + 11 V 0 ­ , CURRENT (AMP) 2.0 4.0 tr td @ VBE(off) = 5.0 V TJ = 25°C VCC = 30 V IC/IB = 10 v 51 ­4V D1 RB
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BD790 BD791 equivalent Transistor BC 3199 BDX33C MOTOROLA BD140 pnp transistor 2Sd331 npn transistor BD789 BD791 BD792

TIP147 pwm

Abstract: BU108 ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ Rating Symbol Value 400 450 850 9.0 15 30 10 20 25 35 , Power Dissipation @ TC = 25_C @ TC = 100_C Derate above 25_C Watts 175 100 1.0 W/_C Operating and , CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic OFF CHARACTERISTICS (1) Symbol Min Max , Adc, TC = 100_C VCE(sat) Vdc - - - 1.5 5.0 2.5 VBE(sat) Vdc - - 1.6 1.6 , = Rated VCEX, IB1 = 2.0 A, VBE(off) = 5.0 Vdc, TC = 25_C) ts tf µs µs 0.09 * Indicates
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TIP147 pwm MJ423 TO218 20A Darlington motorola transistor 2N6547 2N6547

TIP142 TRANSISTOR REPLACEMENT

Abstract: replacement for TIP147 Current - Continuous Peak (1) Base Current - Continuous Total Device Dissipation @ TC = 25_C 0.5 PD 125 , TIP141 TIP142 TIP145 TIP146 TIP147 Symbol Min Typ Max Unit ELECTRICAL CHARACTERISTICS (TC = 25 , Resistive Load (See Figure 1) Delay Time Rise Time td tr - - - - 0.15 0.55 2.5 2.5 - - - , 2.0%, 0% IB1 = IB2, RC & RB Varied, TJ = 25_C) ts tf (1) Pulse Test: Pulse Width = 300 µs, Duty , 8.0 V tr, tf 10 ns DUTY CYCLE = 1.0% 51 RB D1 + 4.0 V 25 µs for td and tr, D1 is disconnected and V2
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TIP142 TRANSISTOR REPLACEMENT replacement for TIP147 high end amplifier schematics 2n3055 BDW51C schematics BD262 DARLINGTON TIP142 TIP147 TIP140

automotive ignition tip162

Abstract: 2N6556 Current 2.0 Total Power Dissipation @ TC = 25_C @ TC = 100_C Derate above 25_C PD 175 100 1.0 118 47.5 , MJ10012 MJH10012 ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic OFF , 100 20 - - - - - - - 550 350 150 - - - - - - - 2000 - 15 2.0 2.5 2.5 3.0 2.8 3.5 , ms 220 2N3713 t1 L = 10 mH 25 µs 0 225 µs Vclamp En 51 VCEO VCER ­4V 27 Vclamp VCEO(sus) = 400 Vdc , Vdc VCE = 6 Vdc 0.1 0.2 0.3 0.5 0.7 1 2 3 IC, COLLECTOR CURRENT (AMP) 5 7 10 25°C TJ = 150°C VCE
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automotive ignition tip162 2N6556 MJE13009 2N63 BUW46 MJ1000

3904 Transistor

Abstract: BU108 Power Dissipation @ TA = 25_C Derate above 25_C Total Power Dissipation @ TC = 25_C Derate above 25_C 2.5 5 2 16 100 50 Watts mW/_C Watts mW/_C PD 80 640 Operating and Storage Junction Temperature Range , CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic OFF CHARACTERISTICS (2) Symbol Min 300 , - ELECTRICAL CHARACTERISTICS - continued (TC = 25_C unless otherwise noted) Characteristic , ) 2.5 3.5 2.4 2.5 Vdc Vf Vdc SWITCHING CHARACTERISTICS Storage Time (VCC = 250 Vdc, IC
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3904 Transistor 2n2222 npn transistor footprint EQUIVALENT FOR mjf18004 ignition coil drivers NPN POWER DARLINGTON TRANSISTORS coil driver TO-247 1N4933 equivalent MJE5740 MJE5741 MJE5742

2SC1419

Abstract: sec tip41c SILICON POWER TRANSISTORS 200 VOLTS 200 WATTS CASE 340G­02, STYLE 2 TO­264 MAXIMUM RATINGS (TJ = 25 , Continuous Total Power Dissipation @ TC = 25°C Derate Above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO VCEX IC IB PD TJ, Tstg Value 200 200 7 200 15 25 1.5 200 1.43 ­ 65 to +150 , Transistor Device Data 3­843 MJL3281A ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted , - - 50 5 25 Vdc Vdc µAdc µAdc µAdc Symbol Min Typ Max Unit 3­844 Motorola Bipolar Power
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sec tip41c MJE493 BDW83 buv98a cross reference 2n3055 audio output circuit 2sc3281 MJL1302A

MJ3001 equivalent

Abstract: Motorola transistors MJE3055 TO 127 Current - Continuous - Peak(1) Adc Total Power Dissipation @ TC = 25_C @ TC = 100_C Derate above TC = 25 , MJW16010A ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic OFF CHARACTERISTICS , Time td tr - - - - - - 25 100 600 ns Storage Time Fall Time Storage Time Fall Time ( C = 10 Adc , CHARACTERISTICS 50 30 hFE, DC CURRENT GAIN 20 TJ = 100°C 25°C VCE = 5 V VCE , COLLECTOR­EMITTER VOLTAGE (VOLTS) 5 3 2 1 0.5 0.3 0.2 0.1 0.05 0.15 0.2 0.3 IC/IB = 10 TJ = 25°C IC/IB = 10 TJ = 100°C 10 7 5 3 0.2
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Motorola transistors MJE3055 TO 127 BD907 equivalent Drive IC 2SC3346 mje340 equivalent transistor equivalent book 2sc2238 mje521 equivalent

mje15033 replacement

Abstract: BD262 DARLINGTON Replacement for 2N3055 and Driver High Gain Darlington Performance Built­in Diode Protection for Reverse , 25_C Derate above 25_C 15.25 30.5 PD 120 0.685 Watts W/_C Operating and Storage Junction Temperature , *ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic OFF CHARACTERISTICS Symbol , 1.0 0.5 0.2 0.1 0.05 2.0 dc TJ = 200°C BONDING WIRE LIMITED THERMAL LIMIT, SINGLE PULSE, TC = 25 , data of Figure 1 is based on TC = 25_C; TJ(pk) is variable depending on power level. Second breakdown
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mje15033 replacement 2SB554 replacement 2sc1079 replacement 2SD323 BD262A DARLINGTON 2SC1013 replacement 2N6576 2N6577 2N6578

transistor mj11032 equivalent

Abstract: transistor mj11028 equivalent Gain - hFE = 1000 (Min) @ IC = 25 Adc hFE = 400 (Min) @ IC = 50 Adc · Curves to 100 A (Pulsed) · Diode , 100 2 Total Power Dissipation @ TC = 25_C Derate above 25_C @ TC = 100_C Operating and Storage , BASE COLLECTOR NPN MJ11028 MJ11030 MJ11032 BASE COLLECTOR 3.0 k 25 3.0 k 25 , MJ11031 MJ11033 ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic OFF , 10 5 2 Collector­Emitter Leakage Current (VCE = 50 Vdc, IB = 0) DC Current Gain (IC = 25 Adc, VCE = 5
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transistor mj11032 equivalent transistor mj11028 equivalent MJ11032 equivalent transistor MJ11032 MJ11030 equivalent 2sd717 MJ11029

circuit diagram of 2N3055 series voltage regulator

Abstract: 2N3055 diagram with power supply -25 (V|=i -27 to -38V) A VQ Line regulation T, - 25°C 300 (Vj=â'"17.5 to -30V) 360 (V,= -21 to -33V , -26 to -32V) 240 (Vr -30 to -36V) AV0 Load regulation Tj= 25"C l0 = 5 mA to 1.5A 300 360 400 480 mV , . Fig. 4 - High current negative regulator (-5V/4A with 5A current limiting) °-2 n 2N3055 Fig. 5 - Typical ECL system power supply (-5.2V/ 4A) O- 2N3055 4.7 A 1 Jl L7952AC -O -5.2V Optional dropping
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OCR Scan
L7900 L7800 circuit diagram of 2N3055 series voltage regulator 2N3055 diagram with power supply N2N3055 L7912ACV diode 2N3055 2N3055 12V L7900AC 1IM4001

2N3055 plastic

Abstract: BUT11Af equivalent Emitter­Base Voltage RMS Isolation Voltage (For 1 sec, TA = 25°C, Rel. Humidity < 30%) Per Figure 7 Per Figure , Continuous Base Current - Pulsed (1) Total Power Dissipation @ TC = 25°C* Derated above 25°C Operating and , CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS (1) Collector-Emitter Sustaining Voltage (Figures 1 & 2) (IC = 100 mAdc, IB = 0, L = 25 µH) Collector Cutoff Current (VCE = 1000 , CHARACTERISTICS (1) Collector-Emitter Saturation Voltage (IC = 2.5 Adc, IB = 0.5 Adc) Base-Emitter Saturation
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BUT11Af equivalent bdx54d 2SC140 BUT11AF

2N3055 TO220

Abstract: BD130 COMPLEMENTARY SILICON 80 ­ 100 VOLTS 30 WATTS Total Power Dissipation @ TC = 25_C Derate above 25_C Total Power Dissipation @ TA = 25_C Derate above 25_C Unclamped Inductive Load Energy (See Note 3) Operating , 4.167 CASE 221A­06 TO­220AB ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted , 3­871 TIP29B TIP29C TIP30B TIP30C 500 300 hFE, DC CURRENT GAIN TJ = 150°C 25°C ­ 55°C t, TIME ( µs , 10 ts = ts ­ 1/8 tf TJ = 25°C 100 70 50 30 tf @ VCC = 10 V 10 7.0 5.0 0.03 IC, COLLECTOR
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BD130 NPN Transistor BD241 3221 3900 bipolar transistor td tr ts tf SE9302 MJE2482

BU108

Abstract: ir411 ) Collector­Current - Continuous - Peak (pw 10 ms) Base­Current continuous Total Power Dissipation @ TC = 25_C VCER , BUV22 ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic OFF CHARACTERISTICS1 Symbol Min Max Unit Collector­Emitter Sustaining Voltage (IC = 200 mA, IB = 0, L = 25 mH) VCEO(sus , 4 V) hFE 20 10 60 Collector­Emitter Saturation Voltage (IC = 10 A, IB = 1 A) (IC = 20 A, IB = 2.5 A , = 2 2.5 5A A, VCC = 100 V, RC = 5 ) 2%. 0.35 1Pulse Test: Pulse Width 300 µs, Duty Cycle 3­386
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ir411 transistor BC 247 2sc101 2N592

MJE340-MJE350

Abstract: 2SD71 Power Dissipation @ TC = 25_C Derate above 25_C Total Power Dissipation @ TA = 25_C Derate above 25 , ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic Symbol Min OFF , 25°C 1000 700 500 300 ­ 55°C IC, COLLECTOR CURRENT (AMPS) 10,000 7000 5000 hFE, DC CURRENT GAIN , @ TC = 25°C (SINGLE PULSE) SECOND BREAKDOWN LIMIT 7.0 10 3.0 30 VCE, COLLECTOR­EMITTER VOLTAGE , ) 2.75(3) 0.6 1.5 typ 1.7(3) 4 1.7(3) 2.75(3) 2.5(3) 3.2(3) 0.5 typ 1 typ 3 2.5(3) 2.75(3) - 0.5 typ 1.5
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MJE340-MJE350 2SD71 2sc106 BD139.16 BD139.6 BD136.10 MC3419 MJE270 MJE271

MJ15015 TRANSISTOR REPLACEMENT GUIDE

Abstract: MJ15015 equivalent , dc­to­dc converters, inverters, or for inductive loads requiring higher safe operating area than the 2N3055 , 25_C Derate above 25_C Operating and Storage Junction Temperature Range PD 115 0.65 180 1.03 Watts W , 2N3055A MJ2955A 0 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (°C) 175 200 Figure 1 , MJ2955A MJ15016 Characteristic ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Symbol , µs Storage Time Fall Time (VCC = 30 Vdc, IC = 4.0 Adc, IB1 = IB2 = 0.4 0 4 Adc, Adc tp = 25 µs
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MJ15015 TRANSISTOR REPLACEMENT GUIDE MJ15015 equivalent MJ2955 replacement 2N3055A 2n3055 tr bc 338 MJ15015 application note MJ15015

motorola 415 D2PAK

Abstract: 2N3055 ) Base Current - Continuous Base Current - Peak (1) *Total Device Dissipation @ TC = 25_C *Derate above 25°C Operating and Storage Temperature 50 0.4 Watt W/_C TJ, Tstg ­ 65 to 150 CASE 221A­06 TO , RJC RJA TL 2.5 62.5 260 Maximum Lead Temperature for Soldering Purposes: 1/8 from case for 5 , ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25 , Sustaining Voltage (IC = 100 mA, L = 25 mH) Collector­Base Breakdown Voltage (ICBO = 1 mA) Emitter­Base
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2N5686 2sc15 transistor bdx54c transistor 2SC1061 motorola bipolar transistor GUIDE DIODE 2N4002 BUL44D2

BD139 time

Abstract: 2n5298 700 700 10 15 25 Unit Vdc Vdc Vdc Vdc Adc Adc Collector­Emitter Sustaining Voltage Collector­Base , Dissipation @ TC = 25_C *Derate above 25°C Operating and Storage Temperature 150 1.2 Watt W/_C TJ, Tstg ­ 65 , ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Symbol Min Typ Max Unit Collector­Emitter Sustaining Voltage (IC = 100 mA, L = 25 mH , µAdc µAdc µAdc µAdc Collector Cutoff Current (VCE = Rated VCES, VEB = 0) @ TC = 25°C @ TC = 125°C @ TC
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BD139 time ST BDW83C 2SC495 bd135 TRANSISTOR REPLACEMENT GUIDE 2N6022 2 N MJE3055 BUH150

BD139 fall time

Abstract: BU108 Dissipation @ TC = 25_C *Derate above 25°C Operating and Storage Temperature 100 0.8 Watt W/_C TJ, Tstg ­ 65 , ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Symbol Min Typ Max Unit Collector­Emitter Sustaining Voltage (IC = 100 mA, L = 25 mH , µAdc µAdc µAdc µAdc Collector Cutoff Current (VCE = Rated VCES, VEB = 0) @ TC = 25°C @ TC = 125°C @ TC = 25°C @ TC = 125°C 100 1000 100 1000 100 Collector Base Current (VCB = Rated VCBO, VEB = 0
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BD139 fall time motorola MJ15003 transistor cross reference bd139 140 motorola 2n3772 TIP42A equivalent BUH100

2sC144

Abstract: BU108 ) *Total Device Dissipation @ TC = 25_C *Derate above 25°C Operating and Storage Temperature 100 0.8 Watt W , ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25 , Sustaining Voltage (IC = 100 mA, L = 25 mH, RBE = 200 ) Collector­Base Breakdown Voltage (ICBO = 1 mA , Adc) @ TC = 25°C @ TC = 125°C @ TC = 125°C 100 1000 100 500 IEBO µAdc ON CHARACTERISTICS @ TC = 25°C @ TC = 125°C @ TC = 25°C @ TC = 125°C @ TC = 25°C @ TC = 125°C @ TC = 25°C @ TC = 125°C VBE(sat) Vdc
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2sC144 lc 3101 MJE18604D2
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