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2n3055 IC

Catalog Datasheet MFG & Type PDF Document Tags

TOSHIBA 2N3055

Abstract: 2n3055 toshiba GDÜflGll 9097250 TOSHIBA t>öC Ö8ÖT1 33-/3 2N3055 Ic " V , 56C 08010 Q~f~33~/3 SILICON NPN TRIPLE DIFFUSED TYPE_ 2N3055 U n i , ) vebo ic NN dd +1 01 A Collector Current & Base Current \k Collectpr Power Dissi p a t i o n , ·5 V , T c =150°C V c f .=30V, l,=0 V E B=7V, IC =0 70 60 20 5 - A* V CER(SUS I C=0.2A, RB E = 1 0 0 0 v CE0(SUS IC=0.2A, IB =0 h FE V BE v CE(sat) V C e =4V, I c =4A 'k 'k Vc e = 4 V
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OCR Scan
TOSHIBA 2N3055 2n3055 toshiba 2n3055 IC 2n3055 npn transistor toshiba 2n3055 regulator 10a 2N3055 curve

2n3055 malaysia

Abstract: MJ2955 2n3055 200 watts amplifier 20 to 70 at IC = 4.0A. · VCE(sat) = 1.1V (Maximum) at IC = 4.0A, IB = 400mA. NPN 2N3055 PNP , 2N3055, MJ2955 Complementary Power Transistors Designed for use in general-purpose amplifier and , Emitter-Base Voltage VEBO 7.0 Collector Current-Continuous IC 15 Base Current IB 7.0 , 31/05/05 V1.0 2N3055, MJ2955 Complementary Power Transistors Thermal Characteristics , Collector-Emitter Sustaining Voltage (1) (IC = 200mA, IB = 0) VCEO(sus) 60 - Collector-Emitter
Multicomp
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2n3055 malaysia MJ2955 2n3055 200 watts amplifier DC variable power with 2n3055 2n3055 pnp MJ2955 300 watts amplifier MJ2955 TRANSISTOR

TIP3055

Abstract: pin out TRANSISTOR tip2955 : For additional design curves, refer to electrical characteristics curves of 2N3055. IC, COLLECTOR , and amplifier applications. · DC Current Gain - hFE = 20 ­ 70 @ IC = 4.0 Adc · Collector­Emitter Saturation Voltage - VCE(sat) = 1.1 Vdc (Max) @ IC = 4.0 Adc · Excellent Safe Operating Area 15 AMPERE , Collector­Base Voltage VCB 100 Vdc Emitter­Base Voltage VEB 7.0 Vdc IC 15 Adc , 25°C 100 10 0.1 TIP3055 TIP2955 0.2 0.3 2.0 3.0 0.5 0.7 1.0 IC, COLLECTOR CURRENT
Motorola
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pin out TRANSISTOR tip2955 2n3055 motorola TIP3055 pin out TIP3055 application 2N3055 power amplifier circuit Motorola transistors tip3055 TIP3055/D

2n3055 IC

Abstract: of 2n3055 additional design curves, refer to electrical characteristics curves of 2N3055. IC, COLLECTOR CURRENT , · 15 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60 VOLTS 90 WATTS hFE = 20­70 @ IC = 4.0 Adc Collector­Emitter Saturation Voltage - VCE(sat) = 1.1 Vdc (Max) @ IC = 4.0 Adc Excellent , 7.0 Vdc Collector Current - Continuous IC 15 Adc Base Current IB 7.0 Adc , 2.0 3.0 IC, COLLECTOR CURRENT (AMP) 5.0 7.0 10 Figure 1. DC Current Gain © Semiconductor
ON Semiconductor
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of 2n3055 219 tip3055 2N3055 transistor equivalent TIP3055 NPN power transistor

2N3055 power amplifier circuit

Abstract: 2N3055 equivalent transistor NUMBER additional design curves, refer to electrical characteristics curves of 2N3055. IC, COLLECTOR CURRENT , · 15 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60 VOLTS 90 WATTS hFE = 20­70 @ IC = 4.0 Adc Collector­Emitter Saturation Voltage - VCE(sat) = 1.1 Vdc (Max) @ IC = 4.0 Adc Excellent , 7.0 Vdc Collector Current - Continuous IC 15 Adc Base Current IB 7.0 Adc , 2.0 3.0 IC, COLLECTOR CURRENT (AMP) 5.0 7.0 10 Figure 1. DC Current Gain © Semiconductor
ON Semiconductor
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2N3055 equivalent transistor NUMBER power transistor tip3055 TIP3055-D equivalent transistor TIP3055 TIP3055 220 2N3055 MEXICO

2N3055 power amplifier circuit

Abstract: 2n3055 2N3055 MJ2955 20 IC, COLLECTOR CURRENT (AMP) 10 6 4 2 1 0.6 0.4 0.2 6 BONDING WIRE LIMIT THERMALLY , ) IC, COLLECTOR CURRENT (AMP) Figure 5. "On" Voltages http://onsemi.com 4 2N3055 MJ2955 , applications. 2N3055 * PNP MJ2955 * *ON Semiconductor Preferred Device NPN · DC Current Gain - hFE = 20­70 @ IC = 4 Adc · Collector­Emitter Saturation Voltage - · VCE(sat) = 1.1 Vdc (Max) @ IC = 4 Adc , ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ MAXIMUM RATINGS Rating Symbol VCEO VCER VCB VEB IC
ON Semiconductor
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2n3055 application 2n3055 circuit 2N3055 typical applications 2N3055 MJ2955 pin out TRANSISTOR 2n3055 2N3055 JAPAN 204AA 2N3055/D

2N3055

Abstract: 2n3055 malaysia 2N3055 MJ2955 Complementary power transistors Features Low collector-emitter saturation , schematic diagram Device summary Order code Marking 2N3055 2N3055 MJ2955 MJ2955 . Rev 7 Packaging TO-3 January 2008 Package tray 1/7 www.st.com 7 2N3055 , Symbol Parameter Value NPN 2N3055 PNP Unit MJ2955 VCBO Collector-emitter voltage , Collector-emitter voltage (IB = 0) 60 V VEBO Collector-base voltage (IC = 0) 7 V IC
STMicroelectronics
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2n3055 audio 2N3055 schematic diagram 2N3055 ST st 2n3055 2n3055 audio amplifier 2N3055/MJ2955

2n3055

Abstract: mj2955 2N3055, MJ2955 Complementary power transistors Datasheet - production data Features â'¢ Low , ct u od r P e let o bs O Table 1. Device summary Order code Marking 2N3055 2N3055 MJ2955 MJ2955 This is information on a product in full production. DocID4079 Rev 8 , 2N3055, MJ2955 Absolute maximum rating Table 2. Absolute maximum rating Value Symbol Parameter NPN 2N3055 PNP Unit MJ2955 VCBO Collector-base voltage (IE = 0) 100 V VCER
STMicroelectronics
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ID4079

2n3055

Abstract: 2N3055 NPN Transistor ) Figure 3. DC Current Gain, 2N3055 (NPN) IC = 1.0 A TJ = 150°C 5000 2.0 TJ = 25°C 1.6 IC , IC, COLLECTOR CURRENT (AMP) Figure 7. â'Onâ' Voltages, 2N3055 (NPN) Figure 8. â'Onâ , 2N3055(NPN), MJ2955(PNP) Preferred Device Complementary Silicon Power Transistors , . Features http://onsemi.com â'¢ DC Current Gain â' hFE = 20â'70 @ IC = 4 Adc â , , 115 WATTS VCE(sat) = 1.1 Vdc (Max) @ IC = 4 Adc Excellent Safe Operating Area Pbâ'Free Packages
ON Semiconductor
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2N3055 NPN Transistor 2N3055 power amplifier circuit diagram 2n3055 circuit diagram 2n3055 application note

2N3055

Abstract: DC variable power with 2n3055 ) IC, COLLECTOR CURRENT (AMP) Figure 7. "On" Voltages, 2N3055 (NPN) Figure 8. "On" Voltages , 2N3055, MJ2955 Preferred Device Complementary Silicon Power Transistors . . . designed for general-purpose switching and amplifier applications. · DC Current Gain - hFE = 20 -70 @ IC = 4 Adc · Collector-Emitter Saturation Voltage - · · VCE(sat) = 1.1 Vdc (Max) @ IC = 4 Adc Excellent Safe Operating Area , VCER VCB VEB IC IB Value 60 70 Unit Vdc Vdc Vdc Vdc Adc Adc Collector-Emitter Voltage Collector-Emitter
ON Semiconductor
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2N3055G power transistor 2n3055 2N3055 transistor 2n3055 amplifier 2n3055h mj2955 safe operating area

2N3055 MOTOROLA

Abstract: 2N3055 power amplifier circuit MOTOROLA Order this document by 2N3055/D SEMICONDUCTOR TECHNICAL DATA NPN 2N3055 , IC = 4 Adc · Collector­Emitter Saturation Voltage - VCE(sat) = 1.1 Vdc (Max) @ IC = 4 Adc · , Vdc Collector Current - Continuous IC 15 Adc Base Current IB 7 Adc Total , . 1995 Motorola Bipolar Power Transistor Device Data 1 2N3055 MJ2955 ELECTRICAL CHARACTERISTICS , Collector­Emitter Sustaining Voltage (1) (IC = 200 mAdc, IB = 0) VCEO(sus) 60 - Vdc
Motorola
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2N3055 NPN MOTOROLA POWER TRANSISTOR 2N3055 power circuit 2n3055 datasheet 2N3055 TO-3 2N3055* motorola 2n3055-1

2N3055 power circuit

Abstract: 2N3055 power amplifier circuit , IC = 1.0 Adc, f = 1.0 kHz) fhfe kHz *Indicates Within JEDEC Registration. (2N3055) (1) Pulse Test: Pulse Width v 300 µs, Duty Cycle v 2.0%. http://onsemi.com 2 2N3055 MJ2955 20 IC, COLLECTOR , general­purpose switching and amplifier applications. 2N3055 * PNP MJ2955 * *ON Semiconductor Preferred Device · DC Current Gain - hFE = 20­70 @ IC = 4 Adc · Collector­Emitter Saturation Voltage - · Excellent Safe Operating Area MAXIMUM RATINGS VCE(sat) = 1.1 Vdc (Max) @ IC = 4 Adc ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ
ON Semiconductor
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2n3055 equal MJ2955 mexico value of 2n3055 Application Notes 2n3055 Amplifier

2N3055

Abstract: hfe 2n3055 2N3055 MJ2955 Complementary power transistors Features Low collector-emitter saturation , schematic diagram Device summary Order code Marking 2N3055 2N3055 MJ2955 Package Packaging MJ2955 TO-3 tray 1/7 . 7 2N3055 MJ2955 Absolute maximun rating 1 , 2N3055 PNP Unit MJ2955 VCBO Collector-emitter voltage (IE = 0) 100 V VCER , Collector-base voltage (IC = 0) 7 V IC Collector current 15 A IB Base current 7 A
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JESD97 0015923C hfe 2n3055 mj2955 TO-3 2n3055 25 general purpose 2n3055 transistors transistors 2n3055

MJ2955 300 watts amplifier circuit diagram

Abstract: MJ2955 2n3055 200 watts amplifier 4.0 A 0.2 0.1 Figure 3. DC Current Gain, 2N3055 (NPN) IC = 1.0 A VCE = 4.0 V TJ = , IC, COLLECTOR CURRENT (AMP) Figure 7. "On" Voltages, 2N3055 (NPN) Figure 8. "On" Voltages , 2N3055, MJ2955 Preferred Device Complementary Silicon Power Transistors . . . designed for general-purpose switching and amplifier applications. · DC Current Gain - hFE = 20 -70 @ IC = 4 Adc · Collector-Emitter Saturation Voltage - · http://onsemi.com VCE(sat) = 1.1 Vdc (Max) @ IC = 4 Adc Excellent
ON Semiconductor
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MJ2955 300 watts amplifier circuit diagram MJ2955 2n3055 200 watts amplifier diagram DC variable power with 2n3055 datasheet 22N3055 2n3055 collector characteristic curve

2n3055 malaysia

Abstract: Mj2955 2N3055, MJ2955 Complementary power transistors Datasheet - production data Features â'¢ Low , 2N3055 2N3055 MJ2955 MJ2955 This is information on a product in full production. DocID4079 , rating 1 2N3055, MJ2955 Absolute maximum rating Table 2. Absolute maximum rating Value Symbol Parameter NPN 2N3055 PNP Unit MJ2955 VCBO Collector-base voltage (IE = 0) 100 V , 0) 60 V VEBO Emitter-base voltage (IC = 0) 7 V IC Collector current 15
STMicroelectronics
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2n3055 application note

Abstract: 2N3055 power amplifier circuit 4.0 A 0.2 0.1 Figure 3. DC Current Gain, 2N3055 (NPN) IC = 1.0 A VCE = 4.0 V TJ = , IC, COLLECTOR CURRENT (AMP) Figure 7. "On" Voltages, 2N3055 (NPN) Figure 8. "On" Voltages , 2N3055, MJ2955 Preferred Device Complementary Silicon Power Transistors . . . designed for general-purpose switching and amplifier applications. · DC Current Gain - hFE = 20 -70 @ IC = 4 Adc · Collector-Emitter Saturation Voltage - · · http://onsemi.com VCE(sat) = 1.1 Vdc (Max) @ IC = 4 Adc
ON Semiconductor
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OF transistor 2n3055 to-3 package 2N30

2n3055 application note

Abstract: 2N3055 power amplifier circuit diagram ) IC, COLLECTOR CURRENT (AMP) Figure 7. "On" Voltages, 2N3055 (NPN) Figure 8. "On" Voltages , 2N3055(NPN), MJ2955(PNP) Preferred Device Complementary Silicon Power Transistors . . . designed for general-purpose switching and amplifier applications. · DC Current Gain - hFE = 20-70 @ IC = 4 Adc · Collector-Emitter Saturation Voltage - · · VCE(sat) = 1.1 Vdc (Max) @ IC = 4 Adc , MAXIMUM RATINGS Symbol VCEO VCER VCB VEB IC IB Value 60 70 Unit Vdc Vdc Vdc Vdc Adc Adc Collector-Emitter
ON Semiconductor
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2n3055 pin out diagram NPN Transistor 2N3055

2N3055

Abstract: 2n3055 motorola MOTOROLA Order this document by 2N3055/D SEMICONDUCTOR TECHNICAL DATA NPN 2N3055 , IC = 4 Adc · Collector­Emitter Saturation Voltage - VCE(sat) = 1.1 Vdc (Max) @ IC = 4 Adc · , Vdc Emitter­Base Voltage VEB 7 Vdc Collector Current - Continuous IC 15 Adc , overall value. © Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data 1 2N3055 , Collector­Emitter Sustaining Voltage (1) (IC = 200 mAdc, IB = 0) VCEO(sus) 60 - Vdc
Motorola
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2N3055-D

2n3055

Abstract: 2N3055G VOLTAGE (VOLTS) Figure 3. DC Current Gain, 2N3055 (NPN) IC = 1.0 A VCE = 4.0 V TJ = 150 , 2N3055(NPN), MJ2955(PNP) Preferred Device Complementary Silicon Power Transistors , . Features http://onsemi.com · DC Current Gain - hFE = 20-70 @ IC = 4 Adc · Collector-Emitter , (sat) = 1.1 Vdc (Max) @ IC = 4 Adc Excellent Safe Operating Area Pb-Free Packages are Available , Voltage VEB 7 Vdc IC 15 Adc Collector Current - Continuous Base Current IB 7
ON Semiconductor
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pnp transistor 2N3055 MJ2955G

2N3055

Abstract: 2n3055 malaysia 2N3055 MJ2955 ® COMPLEMENTARY SILICON POWER TRANSISTORS s s STMicroelectronics PREFERRED SALESTYPES COMPLEMENTARY NPN-PNP DEVICES DESCRIPTION The 2N3055 is a silicon Epitaxial-Base , BE 100) Collector-Emitter Voltage (I B = 0) V EBO Emitter-Base Voltage (I C = 0) IC , Temperature Max. Operating Junction Temperature 2N3055 PNP Unit MJ2955 100 V 70 V 60 , types voltage and current values are negative. August 1999 1/4 2N3055 / MJ2955 THERMAL DATA
STMicroelectronics
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2N3055 series voltage regulator 2n3055 voltage regulator complementary npn-pnp complementary npn-pnp power transistors Mj2955 power transistor P003F
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