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Part Manufacturer Description Datasheet BUY
2N2222AUA Microsemi Corporation Small Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, CERAMIC PACKAGE-4 visit Digikey Buy
2N2222AUB Microsemi Corporation Small Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, HERMETIC SEALED, CERAMIC, CERSOT-3 visit Digikey Buy
2N2222AL Microsemi Corporation Small Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-206AA, SIMILAR TO TO-18, 3 PIN visit Digikey Buy
2N2222 Central Semiconductor Corp Small Signal Bipolar Transistor, 0.8A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-18, visit Digikey Buy
2N2222AUB TT Electronics OPTEK Technology Small Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon visit Digikey Buy
2N2222AUA TT Electronics OPTEK Technology Small Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon visit Digikey Buy

2n2222 smd transistor

Catalog Datasheet MFG & Type PDF Document Tags

2n2222 smd

Abstract: 2n2222 smd transistor JUMPER BLOCK, 2 PINS 0.1 SPACING" Shorting Plug 3mm Red LED 3mm Green LED 1N4001 Diode 2N2222 SMD Transistor Push Button Switch (sealed 6mm x 6mm) 20MHz Crystal ­9­ Analog Devices , 330K 220K 5.6K SMD Inductor 10uF 2 2 25 12 2 12 1 1 6 1 1 3 4 7 2 2 1 2 1
Analog Devices
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AD73360 AD73360L R35-R54 2n2222 smd 2n2222 smd transistor 2n2222smd smd-transistor DATA BOOK 2n2222 SMD TRANSISTOR EVAL-AD73360 EVAL-AD7360 U20-22 U11-16

transistor 2N2222 SMD

Abstract: 2n2222 smd MC33079 and transistor 2N2222 etc. The load is a 150Ohm resistor at 50M away. The system uses 15V power , +15V R 0V GND + IC1 RL , -1W B0515S-1W B0515LD-1W B0515D-1W B0515(X)T-1W SIP MICRO SIP DIP MICRO DIP SMD IB0515LS-1W IB0515LD-1W IB0515LT-1W SIP DIP SMD WRB0515CS-1W SIP 12V B1215LS-1W B1215S-1W B1215LD-1W B1215D-1W B1215(X)T-1W SIP MICRO SIP DIP MICRO DIP SMD IB1215LS-1W IB1215LD-1W IB1215LT
MORNSUN
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MPX2100DP transistor 2N2222 SMD SmD TRANSISTOR t1w transistor t1W TRANSISTOR 2N2222 smd 2n2222 2N2222 application notes 100KP 1000VDC B0515LS-1W IB1215LT-1W WRB1215CS-1W

2n2222 -331

Abstract: transistor 2N2222 SMD ) .347 (8.82) .300 (7.62) SMD DESCRIPTION .343 (8.71) .335 (8.51) The LH1485 is a , power MOSFET transistor and at the same time provide isolation and floating voltage supply capability , LH1485AT 6-pin DIP LH1485AAB 6-pin SMD, Tubes LH1485AABTR 6-pin SMD, Tape and Reel 2001 , 2N2222 VS 6 3 Figure 5. LH1485 Connected in AC Load Switching Configuration +5.0 V 100 5 1 ac 1.0 k 2N2222 2 Photo diode array M1 4 2000 pF 300V M2 6 3 Load
Infineon Technologies
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2n2222 -331 6 PIN SMD IC FOR 15 W LED DRIVERS 2n2222 a 331 transistor 2N2222 SMD configuration SMD 6 PIN IC 2N2222 2n2222 331 LH1485AT/AAB/AABTR E52744 1-888-I
Abstract: (optically coupled) designed to drive highly capacitive loads such as the gate of a power MOSFET transistor , ) SMD .343 (8.71) .335 (8.51) Pin one I.D. .256 (6.50) .248 (6.30) .050 (1.27) typ. .039 , 6-pin DIP LH1485AAB 6-pin SMD, Tubes LH1485AABTR © 2000 Infineon Technologies Corp. â , -pin SMD, Tape and Reel 1 March 26, 2000-18 Absolute Maximum Ratings, TA=25°C (except where noted , "¦ M1 Photo diode array Load 4 2000 pF 300 V 2N2222 VS 6 3 Figure 5. LH1485 Infineon Technologies
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LM317 SMD

Abstract: npn smd 2n2222 smd C24 47nF LOUT+ MCLK DEEMP Ce/F2 R3 750 OUTL+ BCLK VERF Q1 2N2222 Cd/F1 , 100 100nF 10-PIN HDR SMD 0805 SMD 0805 10-Pin Vertical Thru Hole, Shrouded Header ± 1%, 100 mW, ± 100 ppm/°C MF Chip Resistor ± 10%, 50 V dc, X7R Ceramic Chip Capacitor 15 10k SMD 0805 ± 1%, 100 mW, ± 100 ppm/°C MF Chip Resistor 3 9 10nF 10µF SMD 0805 SMD 6032, C-CASE ± 10%, 50 V dc, X7R Ceramic Chip Capacitor ± 10%, 16 V dc SMD Tantalum Capacitor 1 1 2 6
Analog Devices
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EVAL-AD1853EB EVAL-AD1853-EB LM317 SMD npn smd 2n2222 smd SMD CODE LM317 ad3303 SmD TRANSISTOR s2e SMD lm317 AD1853 C3537

6B1 zener diode

Abstract: 5- pin smd IC 775 the gate of a power MOSFET transistor and at the same time provide isolation and floating voltage , load switching configuration I o 100Q 2N2222 3J Photo diode array J M1 M2 Load Figure , ~.010(.25) .347(8.82) .300(7.62) 150(3.81) 110(2.79) \ Figure 2.6-pin, SMD .343(8.71) .335 (8.51 , ) .030 (.76 ) klOO (2.54) typ. .135(3.43) .115(2.92) â'¢012 (.30) JR. .008 (.20) Figure 4.8-pin, SMD
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OCR Scan
IL485 6B1 zener diode 5- pin smd IC 775 smd transistor 6b-1 transistor 335 smd smd transistor 3j smd transistor 6b1

TRANSISTOR BC337 SMD

Abstract: transistor BC170 SOT-23 SMD Plastic Package CSA928A CSA931 CSC2328A CSC2331 BC807 BCW67A BSR17A , 2N2221A 2N2906 2N3647 BCX23 BSX21 2N2222 2N2906A 2N3700 BCY56 BSX48 2N2222A , CSA1015Y TO-252 (DPAK) SMD Plastic Package 2N3906 BC238C BC557B CD8050D CSA1585BC , on next column . Medium Power Transistors SOT-223 SMD Plastic Package BCP51 BCP54 BF722 , SOT-23 SMD Plastic Package 2N6122 C44H11 CSB507 CSD1134 TIP29C 2N6290 C44H5
Continental Device India
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TRANSISTOR BC337 SMD transistor BC170 C5198 CDIL 2N2222A Transistor bd139 smd bc337 SMD PACKAGE MPSA45 P2N2369 PN2222 MPSA05 MPSA55 P2N2369A

transistor 2N2222 SMD

Abstract: capacitor 2200 uF voltage regulator 78L08 Q2 transistor 2N2222 Q3 BLF4G10-160 [2] (W × L) 0.914 mm × , BLF4G10LS-160 UHF power LDMOS transistor Rev. 01 - 19 June 2007 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at , Semiconductors UHF power LDMOS transistor 1.3 Applications I RF power amplifiers for GSM, GSM EDGE and , BLF4G10LS-160 NXP Semiconductors UHF power LDMOS transistor 6. Characteristics Table 6
NXP Semiconductors
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ACPR400 ACPR600 capacitor 2200 uF smd transistor l6 L5 smd transistor R8 SMD L6 smd transistor R10 smd

capacitor 2200 uF

Abstract: transistor 2N2222 SMD resistor 910 Q1 voltage regulator - 78L08 Q2 transistor - 2N2222 Q3 , BLF4G10-160 UHF power LDMOS transistor Rev. 01 - 22 June 2007 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at , UHF power LDMOS transistor 1.3 Applications I RF power amplifiers for GSM, GSM EDGE and CDMA base , June 2007 2 of 14 BLF4G10-160 NXP Semiconductors UHF power LDMOS transistor 6
NXP Semiconductors
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ACPR750 ACPR1980 ELECTROLYTIC capacitor 2200 uF 1812-X7R IS-95

SAB 80C167

Abstract: 80C167* microcontroller VE 6 3 4 NC GND 5 GND 0.1 µF *Transistor Q1: Any switching transistor (e.g. 2N2222 , SFH670X series withstands 1.0 kV/µs at VCM = 50 V. The SFH67XX series is also available in a SMD version , minimize any noticeable LED current when the transistor is on. To achieve maximum performance, the stray , . Reasonable values with Q1 = 2N2222 are R3 = R4= 510 and R1 = R2 omitted. Note that R1 and R2 can be omitted, depending on VCE of the transistor Q 1. SFH6719 7 R1 Data IN 3 CMOS LOGIC 4
Vishay Semiconductors
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SFH6705 SFH6731 SFH6732 TGM-030P3 SAB 80C167 80C167* microcontroller 74ls04 connection circuits 74LS04 NOT gate 80c167 truth 74ls04 SFH6700/19 SFH671X/6732 SFH6701/11

ND transistor

Abstract: 74ls04 LED Light circuits diagram switching transistor (e.g. 2N2222) 2001 Infineon Technologies Corp. · Optoelectronics Division · San , SFH67XX series is also available in a SMD version (option 7 and 9 with >8 mm creepage and clearance , current when the transistor is on. To achieve maximum performance, the stray capacitance from anode or , Q1=2N2222 are R3=R4=510 and R1=R2 omitted. Note that R1 and R2 can be omitted, depending on VCE of the transistor Q1. 0.1 µF Figure 19. Balanced Input Impedance Circuitry SFH6719 VCC 8 1 NC
Infineon Technologies
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ND transistor 74ls04 LED Light circuits diagram CIRCUIT DIAGRAM OF LED LOAD DRIVEN BY TOTEM POLE FOR COMMON CATHODE CONNECTION Infineon 80C167 74ls04 LED Light circuits Difference between LS, HC, HCT devices SFH6701/02/05/11/12/31/32 78L05 MAX845 MAX873 BAW56 SFH6731/32

80C167* microcontroller

Abstract: 74LS04 NOT gate 8 1 NC VDD R1 Out 2 Q1* VE 6 3 GND 5 4 NC 17865 7 GND * Transistor Q1: Any switching transistor (e.g. 2N2222) Fig. 18 - Input Circuitry for High CMTI A common way , SFH670X series withstands 1.0 kV/µs at VCM = 50 V. The SFH67XX series is also available in an SMD , diode Another input circuit for high CMTI is shown in figure 18. The transistor shunts the LED in the , when the transistor is on. To achieve maximum performance, the stray capacitance from anode or
Vishay Semiconductors
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an 17850 sab 1077 application 74ls042 sab 1078 SFH671X 74LS04 gate and SFH6702/12 13/SCLK 74HCT04 MAX525

74ls04 LED Light circuits

Abstract: CIRCUIT DIAGRAM OF LED LOAD DRIVEN BY TOTEM POLE FOR COMMON CATHODE CONNECTION 6 GND 5 GND *Transistor Q1: Any switching transistor (e.g. 2N2222) Document Number: 83701 , SFH67XX series is also available in a SMD version (option 7 and 9 with >8 mm creepage and clearance , the transistor is on. To achieve maximum performance, the stray capacitance from anode or cathode to , common way to achieve ultra high CMTI is presented in Figure 19. Reasonable values with Q1=2N2222 are R3=R4=510 and R1=R2 omitted. Note that R1 and R2 can be omitted, depending on VCE of the transistor
Vishay Intertechnology
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74LS04 truth table 74LS04 circuit diagram with voltage Q12N2222 TTL 74LS04 propagation delay NOT gate 74LS04 Difference between LS, HC, HCT, H

12 volt 200 Amp PWM

Abstract: .10mA Lead Temperature Soldering Reflow (SMD styles only) .60 sec. max above 183°C, 230°C peak , RT Test Circuit Open Loop Laboratory Test Fixture V REF RT 2N2222 100k 4.7k 1k Error Amp , should be connected close to Gnd in a single point ground. The transistor and 5k potentiometer are used
Cherry Semiconductor
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12 volt 200 Amp PWM CS52843 MS-012 CS52843ED8 CS52843EDR8 CS52843ED14 CS52843EDR14

2N2222

Abstract: CS3845B Reflow (SMD styles only) .60 sec. max above 183°C, 230°C peak Block Diagram Package Options , Connection 3 CS3845B Test Circuit V REF RT 2N2222 100k 4.7k 1k Error Amp Adjust 4.7k 5k , point ground. The transistor and 5k potentiometer are used to sample the oscillator waveform and apply
ON Semiconductor
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MS-001 CS3845BGN8 CS3845BGD8 CS3845BGDR8 CS3845BGD14 CS3845BGDR14

2n2222 smd

Abstract: 2N2222 .10mA Lead Temperature Soldering Reflow (SMD styles only) .60 sec. max above 183°C, 230°C peak , RT 2N2222 V CC A 100k V REF COMP 4.7k 1k Error Amp Adjust V FB V CC , close to Gnd in a single point ground. The transistor and 5k potentiometer are used to sample the
Cherry Semiconductor
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CS52845 CS52845ED8 CS52845EDR8 CS52845ED14 CS52845EDR14 3NF SMD TRANSISTOR
Abstract: Reflow (SMD styles only) .60 sec. max above 183°C, 230°C peak Block Diagram V CC Undervoltage , RT 2N2222 100k 4.7k 1k Error Amp Adjust 4.7k 5k A COMP V REF 0.1 µ F V CC V FB V , close to Gnd pin in a single point ground. The transistor and 5k potentiometer are used to sample the ON Semiconductor
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CS2841B CS-2843A CS-2841 CS2841BEN8 CS2841BED14 CS2841BEDR14

smd 2n2222

Abstract: Temperature Soldering Reflow (SMD styles only) .60 sec. max above 183°C, 230°C peak Block Diagram , Open Loop Laboratory Test Fixture V REF RT 2N2222 100k 4.7k 1k Error Amp Adjust 4.7k 5k A , single point ground. The transistor and 5k potentiometer are used to sample the oscillator waveform and
ON Semiconductor
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2841B

Abstract: 2841bd14 Reflow (SMD styles only) .60 sec. max above 183¡C, 230¡C peak s Optimized for Off-line , 2N2222 V CC A 100kW COMP 4.7kW 1kW Error Amp Adjust 4.7kW V REF V FB 0.1mF , single point ground. The transistor and 5k½ potentiometer are used to sample the oscillator waveform
Cherry Semiconductor
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CS-2841B CS-2841BN8 CS-2841BD14 2841B 2841bd14 12VVCC25V

3845b power supply

Abstract: 3845b Reflow (SMD styles only) .60 sec. max above 183¡C, 230¡C peak s Optimized for Off-line Use , V REF RT 2N2222 V CC A 100kW V REF COMP 4.7kW 1kW Error Amp Adjust V FB , capacitors should be connected close to Gnd in a single point ground. The transistor and 5k½ potentiometer
Cherry Semiconductor
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CS-3845BN8 CS-3845BD8 CS-3845BD14 3845b power supply 3845b 3845bn SO-14L CS-3845B
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