NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: ://www.microsemi.com Microsemi PPG 13.56MHz 2KW RF Generator with DRF1300 DRF1300 Power MOSFET Hybrid Application , ://www.microsemi.com Microsemi PPG 13.56MHz 2KW RF Generator with DRF1300 DRF1300 Power MOSFET Hybrid 1. , 2KW RF Generator with DRF1300 DRF1300 Power MOSFET Hybrid 3. Application Note THEORY OF OPERATION A , ://www.microsemi.com Microsemi PPG 13.56MHz 2KW RF Generator with DRF1300 DRF1300 Power MOSFET Hybrid Application , ://www.microsemi.com Microsemi PPG 13.56MHz 2KW RF Generator with DRF1300 DRF1300 Power MOSFET Hybrid 5. ... | Original |
28 pages, |
RF transformer turn ratio 12 RF transformer turn ratio 220V ferrite core transformer free data 13.56mhz c class amp 13.56Mhz rf amplifier Class B power amplifier, 13.56MHz 220V ferrite core transformer step down transformer 230 v to 12 v 12v to 220v step up transformer mosfet 5kw high power rf Class E power amplifier, 13.56MHz DRF1300 DRF1300/CLASS-D DRF1300 abstract |
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| Abstract: Application Note 1812 August 2010 13.56 MHz, Class D Push-Pull, 2KW RF Generator with Microsemi DRF1300 DRF1300 Power MOSFET Hybrid Gui Choi Sr. Application Engineer Phone: 541-382-8028, ext. 1205 , push-pull MOSFET hybrid. This application note or the reference design does not represent a finished , measurement results for a 2KW 13.56MHz RF generator using a CLASS D Push-Pull amplifier. To optimize efficiency and minimize cost, the design uses a DRF1300 DRF1300 Power MOSFET Hybrid from Microsemi. The DRF1300 DRF1300 ... | Original |
17 pages, |
2kw transformer 12v center tap transformer 220V ferrite core transformer free data 50 Ohm transformer 27.12MHz power amplifier 13.56Mhz rf amplifier step down transformer 230 v to 15 v step down transformer 12 13.56MHZ 3KW GENERATOR 232 Matching Transformer line matching 13.56Mhz class e power amplifier DRF1300 DRF1300/CLASS-D DRF1300 abstract |
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| Abstract: improve upon the standard MOSFET Qg (on) with a proprietary technique, which reduces the gate to drain , MOSFET voltage and current ratings as well as IGBTs, IGBT modules, and MOSFET modules will be provided , , Table 2 through Table 4, take into account the MOSFET type, its operating voltage, its rated drain , , and any internal gate resistance of the driven MOSFET dissipates energy. The author has taken liberty , Overall inductances of the gate driver output to the driven MOSFET as well as the driven MOSFET source to ... | Original |
6 pages, |
IXFH21N100Q Dx402 IXDD408 all type of MOSFET with value smps full bridge mosfet smps IXFH12N100Q MOSFET FOR AMP POWER SUPPLY SWITCHING DD408 half bridge SMPS 1kw full bridge converter design 1kw full bridge converter smps IXFH6N100Q IXAN0011 IXAN0011 IXAN0011 abstract |
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| Abstract: A New SMPS Non Punch Thru IGBT Replaces MOSFET in SMPS High Frequency Application Richard , propose an in-circuit comparison with equivalent MOSFET solution. N- N+ x The continuous , coefficient for conduction voltage drop is smaller than equivalent voltage rated MOSFET devices, leading to , from MOSFET to IGBT seamlessly. N- x Total Wafer Thickness = 85um Emitter given IGBT , IGBT can be difficult sometimes because devices are rated in different ways. MOSFET shows a resistive ... | Original |
5 pages, |
IGBT tail time INVERTER 500 W SMPS IRFPS40N60K IRG4PC50W 2kw inverter M Cotorogea MOSFET 40A 600V Power MOSFET Wafer smps inverter circuit PFC smps design igbt smps 1200v IGBT 600V 5A cost IRG4PC50W EQUIVALENT datasheet abstract |
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| Abstract: March, 2004 Application Note 9034 Power MOSFET Avalanche Guideline Sungmo Young, Application Engineer Introduction The Power MOSFET is a very popular switching device used in switching power , inductances, and results in high voltage spike between the Power MOSFET drain and source during device turn , MOSFET is equipped to withstand a certain level of stress, unnecessitating expensive protection circuits. This note presents an effective way to determine the applicability of a Power MOSFET in an ... | Original |
7 pages, |
AN-7514 AN-7515 Fairchild Power MOSFET FQA9N90C FDP050AN06A0 FQA11N90C power mosfet 7515 Severns FQA9N90C equivalent mospower applications handbook 2kw mosfet Rudy Severns datasheet abstract |
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| Abstract: MOSFET and a bipolar junction transistor combined: MOSFET A voltage-controlled gate that turns the device both on and off Bipolar Transistor Bipolar current much lower resistance than a MOSFET , p- n+ Gate n- drift region N-channel MOSFET structure Simple model: MOSFET drives a , Tradeoff: Conduction vs. Switching Loss 600V, 30A IGBT 500V, 35A MOSFET APT30GT60BR APT30GT60BR APT5014B2LL APT5014B2LL , IGBT replaces MOSFET When replacing MOSFETs, match up current ratings such that IGBT IC2 rating ... | Original |
16 pages, |
2kw mosfet APT30GT60BR IGBT parallel IGBT PNP IGBT power loss INJECTOR mosfet, igbt, transistor IGBT tail time MOSFET 1200v 30a snubber circuit APT5014B2LL APT0408 IGBT 500V 35A what is fast IGBT transistor APT0408 abstract |
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| Abstract: Minimizes loss due to power MOSFET body drain diode conduction Stand alone operation - no ties to primary , variety of power MOSFET sizes and circuit conditions. The IR1176 IR1176 also provides gate drive overlap , Lead Definitions and Assignments Symbol Description AVDD Power - + 5 VDC to MOSFET drivers Q1 Output - gate drive for Q1 power MOSFET DTOUT1 Output - sets dead time for Q1 output - used with DTIN1 , operating current AVSS Ground for MOSFET driver supply (VDD) X2 Input - transformer input for Q2 ... | Original |
12 pages, |
td1483 Gate Drive Characteristics IR1176 IR1176S IR1176SS IRF 707 P MS-013AC MS013AC SSOP-20 2kw mosfet DIODE 6k 624 PD60185-C PD60185-C abstract |
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| Abstract: output Minimizes loss due to power MOSFET body drain diode conduction Stand alone operation - no ties , be adjusted to accommodate a variety of power MOSFET sizes and circuit conditions. The IR1176 IR1176 also , Description AVDD Power - + 5 VDC to MOSFET drivers Q1 Output - gate drive for Q1 power MOSFET , time for Q2 - used with DTIN2 VSS Ground for MOSFET driver supply (VDD) Q2 Output - gate drive for Q2 power MOSFET 1 *VDD 2 Q1 3 DTOUT2 Q2 20 1 *VDD VSS 19 ... | Original |
11 pages, |
SSOP-20 MS013AC MS-013AC IR1176SS IR1176S IR1176 Gate Drive Characteristics 2kw mosfet PD60185 PD60185 abstract |
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| Abstract: See the following sections Explanation of Pin Functions, External MOSFET, and Voltage Regulator in , REJECTION RATIO vs FREQUENCY See Applications Information, Dynamic Performance RSET = 2kW, RLOAD = 2kW RSET = 2kW, No Bypass Cap 120 20 100 RSET = 2kW, RLOAD = 600W PSRR (dB) Gain (dB) 50 140 30 0 25 Figure 2. 40 10 0 Temperature (°C) RSET = 2kW , requirement. The output current is cascoded by an external P-Channel MOSFET transistor for large voltage ... | Original |
32 pages, |
XTR111AIDGQTG4 2kw mosfet 2SJ326-Z 500w amp circuit diagrams 5MA2 BSP170P cascode mosfet current mirror DFN-10 XTR111 TP2510 NTF2955 MSOP-10 0mA-20mA XTR111 abstract |
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| Abstract: and 50mA. See the following sections Explanation of Pin Functions, External MOSFET, and Voltage , , Dynamic Performance RSET = 2kW, RLOAD = 2kW RSET = 2kW, No Bypass Cap 120 20 100 RSET = 2kW, RLOAD = 600W PSRR (dB) Gain (dB) 50 140 30 0 25 Figure 2. 40 10 0 Temperature (°C) RSET = 2kW, RLOAD = 200W -10 80 60 40 -20 20 -30 Gain = , P-Channel MOSFET transistor for large voltage compliance extending below ground, and for easy power ... | Original |
32 pages, |
XTR111 2SJ326-Z 3kw mosfet in serial amplifier BSP170P cascode mosfet current mirror DFN-10 jedec package TO-243AA MSOP-10 NTF2955 TP2510 2kw mosfet SBOS375B XTR111 abstract |
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| 1 1 0 /catalog/index.html Product catalog Please choose one of the following: 2 1 0 /catalog/parametrics/10.html Parametrics TSA5512M/C3 TSA5512M/C3 TSA5512M/C3 TSA5512M/C3 Temperature Range -10 to +80 Application 12C Peripherals Circuit Type Multimedia ICs Category Synthesizers Number of Pins 20 Function Synthesizers 3 1 0 /catalog/parametrics/11.html Parametrics BF722 BF722 BF722 BF722 Ptot max mW 1200 PNP COMPL BF723 BF723 BF723 BF723 I C max mA 50 fT min MHz 60 hFE max >50 Category 4 1 0 /catalog/parametrics/12.html Parametrics TDA8010M/C1 TDA8010M/C1 TDA8010M/C1 TDA8010M/C1 Total gain min/max dB www.datasheetarchive.com/files/philips/search/docindex-v2.txt |
Philips | 14/02/2002 | 998.47 Kb | TXT | docindex-v2.txt |
| 1 1 0 /catalog/appnotes/15106.html Applicationnotes for Bipolar power transistors Title Date FS072 FS072 FS072 FS072: Horizontal Deflection for 17 64kHz monitors - BU4522AF/AX BU4522AF/AX BU4522AF/AX BU4522AF/AX 1998-04-14 FS078 FS078 FS078 FS078: Horizontal deflection transistors for 17, 70 kHz monitors 2 1 0 /catalog/appnotes/15107.html Applicationnotes for Lighting Title Date AN BUJ100 BUJ100 BUJ100 BUJ100: Philips BUJ100 BUJ100 BUJ100 BUJ100 transistor in TO-92 suits all Philips BUJ100 BUJ100 BUJ100 BUJ100 transistor in TO-92 suits all Compact Fluorescent Lamp 3 1 0 /catalog/appnotes/15230.html Applicationnotes for Deflecti www.datasheetarchive.com/files/philips/search/docindex.txt |
Philips | 25/04/2003 | 954.24 Kb | TXT | docindex.txt |
| /appnotes/15575.html Applicationnotes for N channel dual gate MOSFETs Title Date AN96048 AN96048 AN96048 AN96048 1.pdf: TDA8046H TDA8046H TDA8046H TDA8046H multi : Temperature Sensing using TrenchPLUS devices 2002-04-22 AN10273 AN10273 AN10273 AN10273 1.pdf: Power MOSFET Single-Shot and Repetitive PLUS devices 2002-04-22 AN10273 AN10273 AN10273 AN10273 1.pdf: Power MOSFET Single-Shot and 61 1 0 /catalog/appnotes/27974.html using TrenchPLUS devices 2002-04-22 AN10273 AN10273 AN10273 AN10273 1.pdf: Power MOSFET Single-Shot and 66 1 0 /catalog using TrenchPLUS devices 2002-04-22 AN10273 AN10273 AN10273 AN10273 1.pdf: Power MOSFET Single-Shot and Repetitive Avalanche www.datasheetarchive.com/files/philips/search/docindex-v1.txt |
Philips | 16/06/2005 | 2589.32 Kb | TXT | docindex-v1.txt |