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2kw+mosfet

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: MOSFET Hybrid Dec. 30 2008 By Gui Choi Sr. RF Application Engineer The DRF1300/CLASS-D Reference design is available to expedite the evaluation of the DRF1300 push-pull MOSFET hybrid. This application , ://www.microsemi.com Microsemi PPG 13.56MHz 2KW RF Generator with DRF1300 Power MOSFET Hybrid Application , ://www.microsemi.com Microsemi PPG 13.56MHz 2KW RF Generator with DRF1300 Power MOSFET Hybrid 1 , minimize cost the design uses a DRF1300 Power MOSFET Hybrid from Microsemi. The DRF1300 consists of two Microsemi
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mosfet 5kw high power rf 13.56Mhz class e power amplifier 13.56MHZ 3KW GENERATOR 2kw mosfet SCHEMATIC 5kw power supply 30A 12v to 220v step up transformer 3M-27
Abstract: Microsemi DRF1300 Power MOSFET Hybrid Gui Choi Sr. Application Engineer Phone: 541-382-8028, ext. 1205 , push-pull MOSFET hybrid. This application note or the reference design does not represent a finished , optimize efficiency and minimize cost, the design uses a DRF1300 Power MOSFET Hybrid from Microsemi. The , Class D push-pull amp requires control circuitry, a pair of MOSFET switches, a transformer for combining , MOSFET on resistance, switching cross over transients, and magnetic losses, applications of Microsemi
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220V ferrite core transformer free data rf transformer 16AWG
Abstract: Microsemi DRF1300 Power MOSFET Hybrid Gui Choi Sr. Application Engineer Phone: 541-382-8028, ext. 1205 , push-pull MOSFET hybrid. This application note or the reference design does not represent a finished , efficiency and minimize cost, the design uses a DRF1300 Power MOSFET Hybrid from Microsemi. The DRF1300 , Efficiency 85% THEORY OF OPERATION A Class D push-pull amp requires control circuitry, a pair of MOSFET , % efficiency, but because of the MOSFET on resistance, switching cross over transients, and magnetic losses Microsemi
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220V ferrite core transformer step down transformer 220V to 12V 232 Matching Transformer line matching step down transformer 230 v to 15 v step down transformer 12 13.56Mhz rf amplifier module
Abstract: are discussed. but at partial power conditions this becomes a disadvantage. A MOSFET, with its , possible with module technology. Technical data: â'¢ Boost circuit with MOSFET (600V/45mâ"¦) + SiC , IGBTs + SiC Rectifier in the high side and MOSFET (600V/45mâ"¦) in the low side â'¢ Temperature , '¢ Dual boost circuit with MOSFET (600V/45mâ"¦) + SiC rectifier each. â'¢ Bypass diode for maximum power , â'¢ MOSFET (600V/45mâ"¦) in the outer leg. â'¢ SiC rectifier for the neutral point connection â Vincotech
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H-2060
Abstract: TABLE OF CONTENTS Selection Guides Fast Diode Die Data Sheets FRED Die Data Sheets HEXFET® Power MOSFET Die Data Sheets HEXFRED® Rectifier Die Data Sheets IC Data Sheets IGBT Die Data Sheets IGBT Modules for Motor Drive & UPS IGBT Modules for Motor Drives in Industrial Electric Vehicles IGBTs - , ,&%7 )#* .,0$)#* ., 0$)#* .,$0$)#* ., 0 )#* ., 0$)#* HEXFET® POWER MOSFET DIE DATA SHEETS , Variable Frequency Motor Drive HV Floating MOS-Gate Driver ICs Understanding and Using Power MOSFET International Rectifier
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IRG41BC20W IRG41BC20UD Drive circuit for IGBT using IR2130 IR2184 application notes IR2110 driver CIRCUIT FOR INVERTERS DC MOTOR SPEED CONTROL USING IGBT IR060LM06CS02CB IR060PM12CS02CB IR135LM06CS02CB IR180LMCS02CB IR180LMCS05CB IR207LM
Abstract: upon the standard MOSFET Qg (on) with a proprietary technique, which reduces the gate to drain , MOSFET voltage and current ratings as well as IGBTs, IGBT modules, and MOSFET modules will be provided , , Table 2 through Table 4, take into account the MOSFET type, its operating voltage, its rated drain , , and any internal gate resistance of the driven MOSFET dissipates energy. The author has taken liberty , output to the driven MOSFET as well as the driven MOSFET source to the driver GND must be minimized IXYS
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IXAN0011 DD408 resonant smps 500W smps 500w half bridge smps 500W half bridge converter 2kw 1kw full bridge converter smps 100KH
Abstract: Functions, External MOSFET, and Voltage Regulator in Application Information regarding safe voltage ranges , output current is cascoded by an external P-Channel MOSFET transistor for large voltage compliance , disconnected) the external MOSFET is fully turned on with large gate to source voltage stored in the gate , first few micro-seconds the MOSFET is still turned on and destructive current can flow, depending on , transistor and R6 still require time to discharge the gate of the external MOSFET. R7 and C3 are added for Texas Instruments
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TRANSISTOR 3kw XTR111 SBOS375C ISO/TS16949
Abstract: and ­50mA. See the following sections Explanation of Pin Functions, External MOSFET, and Voltage , P-Channel MOSFET transistor for large voltage compliance extending below ground, and for easy power , disconnected) the external MOSFET is fully turned on with large gate to source voltage stored in the gate , first few micro-seconds the MOSFET is still turned on and destructive current can flow, depending on , transistor and R6 still require time to discharge the gate of the external MOSFET. R7 and C3 are added for Texas Instruments
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rf transmitter ic 3kw mosfet heat sink 2907 TRANSISTOR PNP TP2510 NTF2955 MSOP-10 SBOS375B
Abstract: Functions, External MOSFET, and Voltage Regulator in Application Information regarding safe voltage ranges , the application requirement. The output current is cascoded by an external P-Channel MOSFET , destroy the IC. With the current loop interrupted (the load disconnected) the external MOSFET is fully , closed (the load connected) current flows into the load. But for the first few micro-seconds the MOSFET , discharge the gate of the external MOSFET. R7 and C3 are added for this reason, as well as to limit the Burr-Brown
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SBOS375A
Abstract: of Pin Functions, External MOSFET, and Voltage Regulator in Application Information regarding safe , with the application requirement. The output current is cascoded by an external P-Channel MOSFET , the current loop interrupted (the load disconnected) the external MOSFET is fully turned on with large , connected) current flows into the load. But for the first few micro-seconds the MOSFET is still turned on , the external MOSFET. R7 and C3 are added for this reason, as well as to limit the steepness of Texas Instruments
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cascode mosfet current mirror
Abstract: rating is +25mA and ­50mA. See the following sections Explanation of Pin Functions, External MOSFET, and , requirement. The output current is cascoded by an external P-Channel MOSFET transistor for large voltage , interrupted (the load disconnected) the external MOSFET is fully turned on with large gate to source voltage , the load. But for the first few micro-seconds the MOSFET is still turned on and destructive current , transistor and R6 still require time to discharge the gate of the external MOSFET. R7 and C3 are added for Texas Instruments
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Abstract: Functions, External MOSFET, and Voltage Regulator in Application Information regarding safe voltage ranges , requirement. The output current is cascoded by an external P-Channel MOSFET transistor for large voltage , loop interrupted (the load disconnected) the external MOSFET is fully turned on with large gate to , ) current flows into the load. But for the first few micro-seconds the MOSFET is still turned on and , external MOSFET. R7 and C3 are added for this reason, as well as to limit the steepness of external Texas Instruments
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12v to Amplifier 200w circuit diagrams 2SJ326-Z BSP170P DFN-10
Abstract: Functions, External MOSFET, and Voltage Regulator in Application Information regarding safe voltage ranges , requirement. The output current is cascoded by an external P-Channel MOSFET transistor for large voltage , loop interrupted (the load disconnected) the external MOSFET is fully turned on with large gate to , ) current flows into the load. But for the first few micro-seconds the MOSFET is still turned on and , external MOSFET. R7 and C3 are added for this reason, as well as to limit the steepness of external Texas Instruments
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XRT111 DFN PACKAGE thermal resistance 200W MOSFET POWER AMP TOP marking KST
Abstract: and ­50mA. See the following sections Explanation of Pin Functions, External MOSFET, and Voltage , P-Channel MOSFET transistor for large voltage compliance extending below ground, and for easy power , disconnected) the external MOSFET is fully turned on with large gate to source voltage stored in the gate , first few micro-seconds the MOSFET is still turned on and destructive current can flow, depending on , transistor and R6 still require time to discharge the gate of the external MOSFET. R7 and C3 are added for Texas Instruments
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jedec package TO-243AA 3kw mosfet in serial amplifier
Abstract: of Pin Functions, External MOSFET, and Voltage Regulator in Application Information regarding safe , with the application requirement. The output current is cascoded by an external P-Channel MOSFET , the current loop interrupted (the load disconnected) the external MOSFET is fully turned on with large , connected) current flows into the load. But for the first few micro-seconds the MOSFET is still turned on , the external MOSFET. R7 and C3 are added for this reason, as well as to limit the steepness of Texas Instruments
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marking kst
Abstract: of Pin Functions, External MOSFET, and Voltage Regulator in Application Information regarding safe , with the application requirement. The output current is cascoded by an external P-Channel MOSFET , the current loop interrupted (the load disconnected) the external MOSFET is fully turned on with large , connected) current flows into the load. But for the first few micro-seconds the MOSFET is still turned on , the external MOSFET. R7 and C3 are added for this reason, as well as to limit the steepness of Texas Instruments
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Abstract: See the following sections Explanation of Pin Functions, External MOSFET, and Voltage Regulator in , requirement. The output current is cascoded by an external P-Channel MOSFET transistor for large voltage , destroy the IC. With the current loop interrupted (the load disconnected) the external MOSFET is fully , closed (the load connected) current flows into the load. But for the first few micro-seconds the MOSFET , gate of the external MOSFET. R7 and C3 are added for this reason, as well as to limit the steepness Texas Instruments
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4mA-20mA bsp170 0mA-20mA 5MA2 500w amp circuit diagrams XTR111AIDGQTG4
Abstract: of Pin Functions, External MOSFET, and Voltage Regulator in Application Information regarding safe , with the application requirement. The output current is cascoded by an external P-Channel MOSFET , the current loop interrupted (the load disconnected) the external MOSFET is fully turned on with large , connected) current flows into the load. But for the first few micro-seconds the MOSFET is still turned on , the external MOSFET. R7 and C3 are added for this reason, as well as to limit the steepness of Texas Instruments
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Abstract: Functions, External MOSFET, and Voltage Regulator in Application Information regarding safe voltage ranges , requirement. The output current is cascoded by an external P-Channel MOSFET transistor for large voltage , loop interrupted (the load disconnected) the external MOSFET is fully turned on with large gate to , ) current flows into the load. But for the first few micro-seconds the MOSFET is still turned on and , external MOSFET. R7 and C3 are added for this reason, as well as to limit the steepness of external Texas Instruments
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Abstract: rating is +25mA and ­50mA. See the following sections Explanation of Pin Functions, External MOSFET, and , requirement. The output current is cascoded by an external P-Channel MOSFET transistor for large voltage , interrupted (the load disconnected) the external MOSFET is fully turned on with large gate to source voltage , the load. But for the first few micro-seconds the MOSFET is still turned on and destructive current , transistor and R6 still require time to discharge the gate of the external MOSFET. R7 and C3 are added for Texas Instruments
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