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ISL73096RHVX Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73096RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73128RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73127RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
TIL604HR2 Texas Instruments Photo Transistor, PHOTO TRANSISTOR DETECTOR visit Texas Instruments
HS0-6254RH-Q Intersil Corporation 5 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, DIE-16 visit Intersil

2TY transistor

Catalog Datasheet MFG & Type PDF Document Tags

Transistor 2TY

Abstract: 2ty transistor max. 800 V Isolation voltage v IO min. 3.5 kV 2.5 kV Transistor Optocoupler . , VCBO max. 120 V 80 V Total power dissipation up to Tarnb = 25 °C Transistor Collector-base , transistor optocoupler 750 K/W 650 K/W 500 K/W Rth j-a Rth j-a Rth j-a Isolation related values , V(BR)CBO min. 120 V v (BR)ECO min. 7 V V(BR)EBO min. 7 V Transistor , flUALITY T E C H N O L O G I E S CORP S7E D â  7 4 b b a5 1 0 0 0 4 7 0 ^ â 
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Transistor 2TY

Abstract: Transistor S8550 2TY JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 S8550 TRANSISTOR (PNP) 1. BASE FEATURES Complimentary to S8050 2. EMITTER 3. COLLECTOR Collector current: IC=0.5A MARKING : 2TY MAXIMUM RATINGS (TA=25â"ƒ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous
Jiangsu Changjiang Electronics Technology
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Transistor 2TY Transistor S8550 2TY sot-23 Marking 2TY marking 2TY S8050 2TY S8550 2TY

Transistor 2TY

Abstract: Transistor S8550 2TY S8550 SOT-23 Transistor(PNP) SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features Complimentary to S8050 Collector current: IC=0.5A 2TY Dimensions in inches and (millimeters) MARKING : MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol VCBO VCEO VEBO IC PC Tj Tstg Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction , S8550 SOT-23 Transistor(PNP) Typical Characteristics -
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2ty transistor 2TY marking s8550 sot-23 S8550 sot 23

Transistor 2TY

Abstract: PHILIPS CNX21 photo transistor. The base is not accessible. Features of this product: · very high isolation voltage of , °C Transistor Collector-emitter voltage (open base) Emitter-collector voltage (open base) Collector , fyot 170 April 1986 High-voltage optocoupler CNX21 57E D ?4bb651 ` ilS (2TY - 5 5 to + , to ambient in free air diode transistor From junction to ambient, device mounted on a printed circuit board diode transistor CHARACTERISTICS Tj = 25 °C unless otherwise specified Diode Forward voltage Ip =
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PHILIPS CNX21 Transistor 3TY diode 2Ty optocoupler a 454 DDD4S33 7Z82032 MSA048-2

Transistor 2TY

Abstract: .2ty transistor npn = 10 jus; 5 = 0,01 Continuous reverse voltage Transistor Collector-emitter voltage (open base , Transistor Collector-emitter breakdown voltage Iq = 1 rrA v (BR)CEO min. 30 V Collector-base , Tsld max. 260 °C From junction to ambient in free air diode and transistor ^ th j-a = 500 K/W From junction to ambient, device mounted on a printed-circuit board diode and transistor , December 1988 213 CNX48U (2UALITY TECHNOLOGIES CORP S7E D 74bbA51 00D457D 213 Transistor
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E90700 804/VDE 86/HD GG04S7 DDD4S77

bt 44a

Abstract: Transistor 2TY photo transistor with accessible base in a SOT90B envelope. Designed for low input current and long life , group C) DIN VDE 0860/8.86/HD 195 S4. QUICK REFERENCE DATA Diode DC forward current Transistor , Transistor Collector-emitter voltage (open base) Collector-base voltage (open emitter) Emitter-col lector , T > I 74bbflSl 0004b7L, bl2 (2TY 1stg Tamb Ptot Tsld - 5 5 to +150 °C - 4 0 t o +100 °C max. 250 mW , plane; t^d < 10 s THERMAL RESISTANCE From junction to ambient in free air diode transistor From junction
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P042A bt 44a npn photo transistor P040/44A P040A P043A P044A 0004WS7

smd 2TY

Abstract: Transistor 2TY Transistors Transistor T SMD Type Product specification KST8550S SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 0.4 3 1 0.55 Collector current: IC-=0.5A +0.1 1.3-0.1 +0.1 2.4-0.1 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 , VCE= -6V, IC= -20mA,f=30MHz 150 MHz hFE Classification 2TY Marking Rank L H hFE , Transistors Transistor T SMD Type Product specification KST8550S Typical Characteristics Fig
TY Semiconductor
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smd 2TY smd+2TY 2TY smd transistor

2TY marking code

Abstract: Transistor 2TY MCC Features · · · · · · omponents 20736 Marilla Street Chatsworth !"# $ % !"# MMS8550 SOT-23 Plastic-Encapsulate Transistors Capable of 0.3Watts(Tamb=25 OC) of Power Dissipation. Collector-current 0.5A Collector-base Voltage 40V Operating and storage junction temperature range: -55OC to +150 OC Marking Code: 2TY PNP Silicon Plastic-Encapsulate Transistor SOT-23 A D Electrical Characteristics , Voltage (IC=500mAdc, IB =50mAdc) Base- Emitter Voltage (IE =100mAdc) Transistor Frequency (IC=20mAdc, V CE
Micro Commercial Components
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2TY marking code marking code 2ty 2ty marking transistor MMS8550 SOT-23 2TY transistor SOT-23 marking code 2TY

sot-23 Marking 2TY

Abstract: Transistor S8550 2TY JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 S8550 TRANSISTOR (PNP) 1. BASE FEATURES Complimentary to S8050 2. EMITTER 3. COLLECTOR Collector current: IC=0.5A MARKING : 2TY MAXIMUM RATINGS (Ta=25â"ƒ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous
Jiangsu Changjiang Electronics Technology
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Transistor S8550 2TY

Abstract: sot-23 Marking 2TY BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES , S8550 Package Code 2TY SOT-23 MAXIMUM RATING @ Ta=25 unless otherwise specified Symbol , Production specification Silicon Epitaxial Planar Transistor ELECTRICAL CHARACTERISTICS @ Ta=25 S8550 , Production specification Silicon Epitaxial Planar Transistor S8550 TYPICAL CHARACTERISTICS @ Ta , Electrical Production specification Silicon Epitaxial Planar Transistor S8550 PACKAGE OUTLINE
BL Galaxy Electrical
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transistor s8550 S8550 equivalent SOT-23 2ty BR S8550 s8550 d h S8550 applications BL/SSSTC080 3000/T

Transistor S8550 2TY

Abstract: marking 2ty JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 S8550 TRANSISTOR (PNP) 1. BASE FEATURES Complimentary to S8050 2. EMITTER 3. COLLECTOR Collector current: IC=0.5A MARKING : 2TY MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous
Jiangsu Changjiang Electronics Technology
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s8550 transistor S8550 DATASHEET transistor S8050 2TY SOT

2TY marking code

Abstract: Transistor 2TY Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 MMS8550 Features · · · · · · PNP Silicon Plastic-Encapsulate Transistor SOT-23 Plastic-Encapsulate Transistors Capable of 0.3Watts(Tamb=25 OC) of Power Dissipation. Collector-current 0.5A Collector-base Voltage 40V Operating and storage junction temperature range: -55OC to +150 OC Marking Code: 2TY , Transistor Frequency (IC=20mAdc, V CE=6.0Vdc, f=30MHz) 150 - MAX .120 .098 .055 .041 .081
Shanghai Lunsure Electronic
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2ty marking code sot

sot-23 Marking 2TY

Abstract: MMS8550 SOT-23 2TY MCC omponents 20736 Marilla Street Chatsworth !"# $ % !"# MMS8550 Features · · · · · · PNP Silicon Plastic-Encapsulate Transistor SOT-23 Plastic-Encapsulate Transistors Capable of 0.3Watts(Tamb=25 OC) of Power Dissipation. Collector-current 0.5A Collector-base Voltage 40V Operating and storage junction temperature range: -55OC to +150 OC Marking Code: 2TY , Transistor Frequency (IC=20mAdc, V CE=6.0Vdc, f=30MHz) 150 - MAX .120 .098 .055 .041 .081
Micro Commercial Components
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2TY datasheet MMS8550 equivalent

Transistor S8550 2TY

Abstract: S8050 2TY JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 S8550 TRANSISTOR (PNP) 1. BASE FEATURES Complimentary to S8050 2. EMITTER 3. COLLECTOR Collector current: IC=0.5A MARKING : 2TY MAXIMUM RATINGS (TA=25â"ƒ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous
Jiangsu Changjiang Electronics Technology
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transistors s8550

453 optocoupler

Abstract: SOT230 V - Tan* 5 - 7 V - 100 mA - 200 mW Transistor Photocoupler , i-a from junction to ambient when mounted on PCB 400 K/W Transistor from junction to , CNX62A 57E D PARAMETERS â  ?4btiB51 DDD4SB2 T3S â (2TY CONDITIONS MIN. TYP. MAX , between the shorted diode leads and the transistor emitter, with a detection current of approximately 1 , collector current, typical values. March 1991 231
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453 optocoupler SOT230 BS415 BS7002 380/VDE
Abstract: MCC TM Micro Commercial Components MMS8550-L MMS8550-H #1;#2;#3;#4;#5;#6;#7;#5;#8;#8; #4;#3;#2; #11;#6;#7;omponents 20736 Marilla Street Chatsworth #7;#24;#6;#25;#15;#26;#15;#15; #27;#21;#5;#28; #29;#6;#30;#31;#15;#31; #6;!#16;#15;"##25;#26;#26; $ %#29;#6; #6; #6; #30;#31;#15;#31; #6;!#16;#15;"##25;#26;#25; Features â'¢ PNP Silicon Plastic-Encapsulate Transistor Lead Free Finish/RoHS Compliant ("P" Suffix , OC Marking : 2TY Epoxy meets UL 94 V-0 flammability rating Moisure Sensitivity Level 1 â'¢ â , =100mAdc) F E H G Transistor Frequency (IC=20mAdc, V CE=6.0Vdc, f=30MHz) J DIMENSIONS Micro Commercial Components
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Transistor 2TY

Abstract: Operating and storage junction temperature range: -55OC to +150 OC Marking : 2TY Symbol Parameter , ) Base-Emitter Saturation Voltage (IC=500mAdc, IB =50mAdc) Base- Emitter Voltage (IE =100mAdc) Transistor , PNP Silicon Plastic-Encapsulate Transistor SOT-23 A D Electrical Characteristics @ 25OC Unless
Micro Commercial Components
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Transistor 2TY

Abstract: max. ^tot max. 5 V mA 3 A 1 0 0 2 0 0 mW Transistor Collector-emitter voltage , Transistor Collector-base voltage (open emitter) Collector-emitter voltage (open base) VcEO max , junction to ambient in free air diode transistor Rth j-a Rth j-a 500 K/W 500 K/W From junction to ambient, device mounted on a printed-circuit board diode transistor Rth j-a Rth j-a 400 , . Reverse current Vr = 5 V IR max. 1 0 2 nA 50 nA 1 0 mA 20 nA M Transistor (Ip = 0
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CNX38U 86/HE DD04S 7Z67238

Transistor 2TY

Abstract: marking 2TY MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# MMS8550 Features Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 and MSL Rating 1 · · · · · · PNP Silicon Plastic-Encapsulate Transistor SOT , Collector-base Voltage 40V Operating and storage junction temperature range: -55OC to +150 OC Marking : 2TY , .070 .018 .0005 .035 .003 .015 Transistor Frequency (IC=20mAdc, V CE=6.0Vdc, f=30MHz) 150
Micro Commercial Components
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Transistor 2TY

Abstract: marking 2TY - Emitter Voltage (IE =100mAdc) Transistor Frequency (IC=20mAdc, V CE=6.0Vdc, f=30MHz) Min 40 25 5.0 , Operating and storage junction temperature range: -55OC to +150 OC Marking : 2TY Units Vdc Vdc Vdc Case , Transistor SOT-23 A D OFF CHARACTERISTICS C B C B F E E uAdc uAdc G H J IEBO
Micro Commercial Components
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