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96SDVR-8X-ST-HL-B Advantech Co Ltd HITACHI-LG SLIM 8X SATA DVD+/-RW visit Digikey Buy

2Sk350 HITACHI

Catalog Datasheet MFG & Type PDF Document Tags

IRF740 "direct replacement"

Abstract: irf9640 REPLACEMENT GUIDE HITACHI 2SK261 2SK262 2SK263 2SK294 2SK295 2SK296 2SK309 2SK310 2SK311 2SK319 2SK320 2SK345 2SK346 2SK349 2SK350 HITACHI 2SK382 2SK383 2SK399 2SK400 2SK402 2SK403 2SK408 2SK409 2SK412 2SK413 2SK414 2SK428 2SK440 2SK556 2SK557 HITACHI 2SK559 2SK560 2SK622 2SK623 2SK642 2SK682 2SK683 2SJ101 2SJ102 2SJ113 HITACHI 2SJ114 2SJ117 2SJ118 2SJ119 2SJ85 2SJ86 2SJ87 2SJ88 MATSUSHITA 2SK500 2SK501 2SK501A 2SK610
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IRF9613 IRFP333 VN0106N5 IRF740 "direct replacement" irf9640 REPLACEMENT GUIDE IRF9540 replacement IRF640 irf510 2Sk350 HITACHI rca9213a IRF510 IRF511 IRF512 IRF513 IRF520 IRF521

ko332

Abstract: 2SK350 HITACHI/ÃOPTOELECTRONICS} fmmTfüWföEZECTmWTUWT DET| M^tac^ DDIOOSD 2 | 73c 10020 SILICON , RATINGS (Ta=25 °C) (TO-3P) Item Symbol Rating Unit 2SK349 2SK350 Drain-Source Voltage Voss 400 450 V , Breakdown 2SK349 Viäxiass 7o=10mA, Vos=0 400 â'" â'" V Voltage 2SK350 450 - - V Gate-Source Leak Current , 2SK350 W=360V. Vas=0 Gate-Source Cutoff Voltage Vos off) /o=lmA, VDJ=10V 1.0 - 5.0 V Static , ~ lOOA/fiS - 400 - ns â'¢Pulse Teat 138 S> HITACHI t HITACHI/{OPTOELECTRONICS} 4496ZUb H11AUH. MAXIMUM
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ko332 ko33 2SK350-

2SK350

Abstract: 2Sk350 HITACHI HITACHI/ÃOPTOELECTRONICS} -SSÃSrmí?^TTTTyPTUErarrRON l us ; "73 DF| MMTtaüS DDIOGSD 2 , 2SK350 Drain-Source Voltage Voss 400 450 V Gate-Source Voltage Vass ±20 V Drain Current h 10 A , 7V=25"C ELECTRICAL CHARACTERISTICS (7V=25 °C) â'¢Pulse Teat 138 HITACHI 50 100 150 Cue , 400 â'" â'" V 2SK350 Id- 10mA, Vasâ'"0 450 â'" â'" V Gate-Source Leak Current less VCS=±20V, Km=0 â'" â'" ±1 fA Zero Gate Voltage Drain Current 2SK349 loss Koi=320V. Vos=0 - - 1 mA 2SK350 W
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P73C m12g 7v25 Hitachi Scans-001 VARO

2sk350 hitachi

Abstract: 2SK350 Symbol 2SK349 2SK350 Unit K y -i y y â'¢ y - x 11± VDSS 400 450 V r - h ' - . y - x % E Vgss ±20  ,   ELECTRICAL CHARACTERISTICS (7a= 25°C) s Symbol Test Condition 2SK349 2SK350 Unit a min. typ , - V m m. m Irr If = 5A, Kgs=0, diV/di=100A/^s - 400 - - 400 - ns * Pulse Test 0 HITACHI 875
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KDS -5a

2sk350 hitachi

Abstract: 2SK350 HI T A C H I / { O P TO ELECT RO NI CS } - 2 p re t? ? x r5 ^ H ^ } 73 D E ] M4c ib à 0 S ^ D Î0 D â Ô I 73C 10020 2SK349,2SK350 S IL IC O N N -C H A N N E L M O S FET )max 1.5 HIGH SPEED POWER SW ITCHING. HIGH FREQUENCY POWER AMPLIFIER FEATURES · · · · · Low O n-Resistance. High Speed Sw itching. High Cutoff Frequency. No Secondary Breakdown. Suitable for S w itching , =0 d iF /(it= 100A /fiS - it- 138 0 HITACHI Forward T ra n sfer Admittance |jr/»| (S
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hitachi mosfet power amplifier audio application

Abstract: 2SK215 equivalent the d escrip tion s in th e exam ple. (c) Hitachi, Ltd. 1985 0 HITACHI 1 .INTRODUCTION In 1977, HITACHI was the first in the world to develop and massproduce 100 Watt Complementary Power , with high switching speed and high resistance to electrically induced failure. HITACHI Power MOS FET , response. HITACHI has both types to meet various requirements. The Vertical Types are called "D Series , conventional devices are already in use. @ HITACHI 2 .STRUCTURE & FEATURES Hitachi has two types of
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hitachi mosfet power amplifier audio application 2SK215 equivalent PM4550C 2sd667 2sb647 2SD667 equivalent 2SJ99 2SK375 2SK535 2SK580 RE79-24

IGBT M16 100-44

Abstract: Kt606 Ltd. HCL HITACHI LTD HIT HI-SINCERITY MICROELECTRONICS CORP. HIS HI-TRON SEMICONDUCTOR CORP. HIN
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IGBT M16 100-44 Kt606 transistor 8BB smd Transistor B0243C ASEA HAFO AB SEMICON INDEXES VV276

NT101

Abstract: Kt606 HITACHI LTD 6 Kanda Suruaadai 4-chome Chiyoda-ku Tokyo 101 Japan Tel:03 256 1111 Tlx:J22395 HITACHI , HITACHI ELECTRONIC COMPONENTS GmbH Hans Pinsel Str.lOA, 8013 Haar, Munchen, W.Germany. Tel:08946140 HITACHI ELECTRONIC COMPONENTS PO Box 1062, 164 21 Kista, Sweden Tel:08 7510035, Tlx: 14106 HMC 1235 Walt
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NT101 bf503 KT-934 Mps56 ss120a Ma040 T0226 T0237