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Part : 2SA1312-BL(TE85L,F) Supplier : Toshiba Manufacturer : Avnet Stock : - Best Price : - Price Each : -
Part : 2SA1312-BL(TE85L,F) Supplier : Toshiba Manufacturer : Avnet Stock : - Best Price : €0.0629 Price Each : €0.1257
Part : 2SA1313-Y,LF Supplier : Toshiba Manufacturer : Avnet Stock : - Best Price : $0.0321 Price Each : $0.0392
Part : 2SA1317T Supplier : ON Semiconductor Manufacturer : Rochester Electronics Stock : 1,980 Best Price : - Price Each : -
Part : 2SA1317T-AC Supplier : ON Semiconductor Manufacturer : Rochester Electronics Stock : 20,000 Best Price : - Price Each : -
Part : 2SA1318S-AA Supplier : ON Semiconductor Manufacturer : Rochester Electronics Stock : 18,000 Best Price : - Price Each : -
Part : 2SA1318T Supplier : ON Semiconductor Manufacturer : Rochester Electronics Stock : 14,500 Best Price : - Price Each : -
Part : 2SA1318T-AA Supplier : ON Semiconductor Manufacturer : Rochester Electronics Stock : 3,000 Best Price : - Price Each : -
Part : 2SA1319S-AA Supplier : SANYO Electric Manufacturer : Rochester Electronics Stock : 10,500 Best Price : $0.12 Price Each : $0.15
Part : 2SA1319S-AA Supplier : ON Semiconductor Manufacturer : Rochester Electronics Stock : 3,000 Best Price : $0.12 Price Each : $0.15
Part : 2SA1319T-AA Supplier : ON Semiconductor Manufacturer : Rochester Electronics Stock : 3,000 Best Price : $0.15 Price Each : $0.18
Part : 2SA1313-Y,LF Supplier : Toshiba Manufacturer : Bristol Electronics Stock : 3,000 Best Price : $0.0375 Price Each : $0.1875
Part : 2SA1313-Y-TE85R Supplier : Toshiba Manufacturer : Bristol Electronics Stock : 3,915 Best Price : $0.0375 Price Each : $0.1875
Part : 2SA1312-BL(TE85L,F) Supplier : Toshiba Manufacturer : Chip1Stop Stock : 2,650 Best Price : $1.37 Price Each : $1.48
Part : 2SA1312-GR(TE85L,F Supplier : Toshiba Manufacturer : Chip1Stop Stock : 1,565 Best Price : $0.1010 Price Each : $0.2610
Part : 2SA1312-GR(TE85L,F Supplier : Toshiba Manufacturer : Chip1Stop Stock : 4,250 Best Price : $1.43 Price Each : $1.75
Part : 2SA1312GRTE85LF Supplier : Toshiba Manufacturer : Chip1Stop Stock : 6,190 Best Price : $0.1040 Price Each : $0.2840
Part : 2SA1313-Y(TE85L,F) Supplier : Toshiba Manufacturer : Chip1Stop Stock : 4,650 Best Price : $0.9260 Price Each : $1.12
Part : 2SA1313-Y,LF Supplier : Toshiba Manufacturer : Chip1Stop Stock : 5,600 Best Price : $0.0563 Price Each : $0.15
Part : 2SA1314-C(TE12L,CF) Supplier : Toshiba Manufacturer : Chip1Stop Stock : 3,000 Best Price : $1.91 Price Each : $2.34
Part : 2SA1315-O(F) Supplier : Toshiba Manufacturer : Chip1Stop Stock : 750 Best Price : $2.22 Price Each : $2.77
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2Sa1316 complementary

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: 2SA1316 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1316 For Low Noise Audio Amplifier Applications and Recommended for the First Stages of MC Head Amplifiers · · · · Very , .) Complementary to 2SC3329 Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage , : hFE classification GR: 200~400, BL: 350~700 1 2003-03-24 2SA1316 2 2003-03-24 2SA1316 3 2003-03-24 2SA1316 RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is Toshiba
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SC-43
Abstract: TO SHIBA TOSHIBA TRANSISTOR 2SA1316 FOR LO W NOISE AUDIO AM PLIFIER APPLICATIONS AND 2SA1316 SILICON PNP EPITAXIAL TYPE (PCT PROCESS) Unit in mm . 5.1 M AX. RECOM M ENDED FOR THE , Spreading Resistance : r ^ '= 2.0O (Typ.) · Complementary to 2SC3329 M A X IM U M RATINGS (Ta = 25 , TO SHIBA 2SA1316 ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC Collector Cut-off , Ic (mA) DC CURRENT GAIN hFE tr O 2SA1316 OJ -
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X10-5 961001EAA2 100MH
Abstract: 2SA1316 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1316 For Low Noise Audio Amplifier Applications and Recommended for the First Stages of MC Head Amplifiers Unit: mm , : rbb' = 2.0 (typ.) · Complementary to 2SC3329 Maximum Ratings (Ta = 25°C) Characteristics , dB GR: 200~400, BL: 350~700 1 2003-03-24 2SA1316 2 2003-03-24 2SA1316 3 2003-03-24 2SA1316 RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually working to Toshiba
Original
2sa131 2SC332
Abstract: 2SA1316 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1316 For Low Noise Audio Amplifier Applications and Recommended for the First Stages of MC Head Amplifiers · · · · Very low noise in the region of low signal source impedance equivalent input noise voltage: En = 0.6 nV/Hz1 , .) Complementary to 2SC3329 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-base , 2007-11-01 2SA1316 2 2007-11-01 2SA1316 3 2007-11-01 2SA1316 RESTRICTIONS ON Toshiba
Original
Abstract: TOSHIBA TOSHIBA TRANSISTOR 2SA1316 FOR LOW NOISE AUDIO AMPLIFIER APPLICATIONS AND 2SA1316 SILICON PNP EPITAXIAL TYPE (PCT PROCESS) Unit in mm . 5.1 MAX. RECOMMENDED FOR THE FIRST STAGES OF , Resistance : r^b'= 2.00 (Typ.) Complementary to 2SC3329 0.55 MAX. 0.45 n o 1.27 1.27 M AXIM UM , vveigni, ; v .¿±g °C °C TTT _ · 1_ . A m i 2001-05-31 TOSHIBA 2SA1316 ELECTRICAL , 0 U 11 Ul 2SA1316 TOSHIBA 2SA1316 RESTRICTIONS ON PRODUCT USE 000707EAA · -
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A131
Abstract: TOSHIBA TO SHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) 2SA1316 n û m fi FOR LO W NOISE A U D IO AMPLIFIER APPLICATIONS A N D R EC O M M END ED FOR THE FIRST STAGES OF MC HEAD , Resistance : rbjy = 2.00 (Typ.) · Complementary to 2SC3329 M A X IM U M RATINGS (Ta = 2 5°C) ft A'i I 0 , t t o c h a n g e w i t h o u t n o tic e . 1997 04-10 - 1/4 TOSHIBA 2SA1316 SYMBOL , £ (mA) DC CURRENT GAIN COLLECTOR CURRENT l£ (jj o A) 2SA1316 UJ -
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Abstract: TO SHIBA 2SA1316 2 S A 1 316 TO S H IB A TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) Unit in mm FOR LO W NOISE A U D IO AMPLIFIER APPLICATIONS A N D R EC O M M END ED FOR , / f Noise Low Base Spreading Resistance : r ^ â'™ = 2 .0 0 (Typ.) Complementary to 2SC3329 â'¢ â , /4 TO SH IBA 2SA1316 = 25°C) SYMBOL ELECTRICAL CHARACTERISTICS 'Ta CHARACTERISTIC , » 33 M ET O Ic (M> 2SA1316 UJ -
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Abstract: TOSHIBA 2SC3329 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) 2 S C 3 3 2 9 FOR LOW NOISE AUDIO AMPLIFIER APPLICATIONS AND RECOMMENDED FOR THE FIRST STAGES OF MC HEAD AMPLIFIERS â'¢ Very Low Noise in the Region of Low Signal Source Impedance Equivalent Input Noise Voltage : En = 0. 6nV/V~Hz (Typ.) â'¢ Low Pulse Noise. Low 1 / f Noise â'¢ Low Base Spreading Resistance : r^b' = 2.0 O (Typ.) â'¢ Complementary to 2SA1316 MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC SYMBOL -
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961001EAA1
Abstract: 2SC3329 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3329 For Low Noise Audio Amplifier Applications and Recommended for The First Stages of MC Head Amplifiers · · · · Very low noise in the region of low signal source impedance equivalent input noise voltage: En = 0.6 nV/Hz1/2 (typ.) Low pulse noise. Low 1/f noise Low base spreading resistance: rbb' = 2.0 (typ.) Complementary to 2SA1316 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-base Toshiba
Original
Abstract: TOSHIBA 2SC3329 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) 2 S C 3 3 2 9 FOR LOW NOISE AUDIO AMPLIFIER APPLICATIONS AND RECOMMENDED FOR THE FIRST STAGES OF MC HEAD AMPLIFIERS â'¢ Very Low Noise in the Region of Low Signal Source Impedance Equivalent Input Noise Voltage : En = 0. 6nV/V~Hz (Typ.) â'¢ Low Pulse Noise. Low 1 / f Noise â'¢ Low Base Spreading Resistance : r^b' = 2.0 O (Typ.) â'¢ Complementary to 2SA1316 MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC SYMBOL -
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m 3329
Abstract: T O SH IB A 2SC3329 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) 1çC 337Q Unit in mm FOR LOW NOISE AUDIO AMPLIFIER APPLICATIONS AND RECOMMENDED FOR THE FIRST STAGES OF MC HEAD AMPLIFIERS 5.1 M AX. â'¢ Very Low Noise in the Region of Low Signal Source Impedance Equivalent Input Noise Voltage :En = 0.6nV/V Hz (Typ.) â'¢ Low Pulse Noise. Low 1 / f Noise â'¢ Low Base Spreading Resistance : r^bâ'™ = 2.0 Q (Typ.) â'¢ Complementary to 2SA1316 0.45 0.55 M A X. 0.45 -
OCR Scan
Abstract: 2SC3329 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3329 For Low Noise Audio Amplifier Applications and Recommended for The First Stages of MC Head Amplifiers · Very low noise in the region of low signal source impedance equivalent input noise voltage: En = 0.6 nV/Hz1/2 (typ.) · Low pulse noise. Low 1/f noise · Low base spreading resistance: rbb' = 2.0 (typ.) · Unit: mm Complementary to 2SA1316 Maximum Ratings (Ta = 25°C) Characteristics Symbol Toshiba
Original
Abstract: 100 400 2 0 0 -7 0 0 6 2 0 .3 10 2SC3329 * 2SA1316* 80 100 400 2 0 -
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70H40 transistor equivalent d2012 3sk73 equivalent 2SC734 equivalent 2sc2075 equivalent 2sa970 BL equivalent 2SA1162 2SA1163 2SC1815 2SA1015 2SC2458 2SC2459