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2Sa1316+complementary

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: 2SA1316 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1316 For Low Noise Audio Amplifier Applications and Recommended for the First Stages of MC Head Amplifiers · · · · Very low noise in the region of low signal source impedance equivalent input noise voltage: En = 0.6 nV/Hz1/2 (typ.) Low pulse noise. Low 1/f noise Low base spreading resistance: rbb' = 2.0 (typ.) Complementary to 2SC3329 Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Toshiba
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SC-43
Abstract: TO SHIBA TOSHIBA TRANSISTOR 2SA1316 FOR LO W NOISE AUDIO AM PLIFIER APPLICATIONS AND 2SA1316 SILICON PNP EPITAXIAL TYPE (PCT PROCESS) Unit in mm . 5.1 M AX. RECOM M ENDED FOR THE FIRST STAGES OF MC HEAD AM PLIFIERS · Very Low Noise in the Region of Low Signal Source Impedance Equivalent Input Noise Voltage : En = 0.6nV/ VÎIz"(Typ.) · Low Pulse Noise. Low 1 / f Noise · Low Base Spreading Resistance : r ^ '= 2.0O (Typ.) · Complementary to 2SC3329 M A X IM U M RATINGS (Ta = 25 -
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X10-5 961001EAA2 100MH
Abstract: 2SA1316 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1316 For Low Noise Audio Amplifier Applications and Recommended for the First Stages of MC Head Amplifiers Unit: mm · Very low noise in the region of low signal source impedance equivalent input noise voltage: En = 0.6 nV/Hz1/2 (typ.) · Low pulse noise. Low 1/f noise · Low base spreading resistance: rbb' = 2.0 (typ.) · Complementary to 2SC3329 Maximum Ratings (Ta = 25°C) Characteristics Toshiba
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2sa131 2SC332
Abstract: 2SA1316 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1316 For Low Noise Audio Amplifier Applications and Recommended for the First Stages of MC Head Amplifiers · · · · Very low noise in the region of low signal source impedance equivalent input noise voltage: En = 0.6 nV/Hz1/2 (typ.) Low pulse noise. Low 1/f noise Low base spreading resistance: rbb' = 2.0 (typ.) Complementary to 2SC3329 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-base Toshiba
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Abstract: TOSHIBA TOSHIBA TRANSISTOR 2SA1316 FOR LOW NOISE AUDIO AMPLIFIER APPLICATIONS AND 2SA1316 SILICON PNP EPITAXIAL TYPE (PCT PROCESS) Unit in mm . 5.1 MAX. RECOMMENDED FOR THE FIRST STAGES OF MC HEAD AMPLIFIERS · · · · Very Low Noise in the Region of Low Signal Source Impedance Equivalent Input Noise Voltage :En = 0.6nV/ VHz (Typ.) Low Pulse Noise. Low 1 / f Noise Low Base Spreading Resistance : r^b'= 2.00 (Typ.) Complementary to 2SC3329 0.55 MAX. 0.45 n o 1.27 1.27 M AXIM UM -
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A131
Abstract: TOSHIBA TO SHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) 2SA1316 n û m fi FOR LO W NOISE A U D IO AMPLIFIER APPLICATIONS A N D R EC O M M END ED FOR THE FIRST STAGES OF MC HEAD AMPLIFIERS .5 .1 M A X . Unit in mm · Very Low Noise in the Region of Low Signal Source Impedance Equivalent Input Noise Voltage : En = 0.6nV/ VHz(Typ.) · Low Pulse Noise. Low 1 /f Noise · Low Base Spreading Resistance : rbjy = 2.00 (Typ.) · Complementary to 2SC3329 M A X IM U M RATINGS (Ta = 2 5°C) ft A'i I 0 -
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Abstract: TO SHIBA 2SA1316 2 S A 1 316 TO S H IB A TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) Unit in mm FOR LO W NOISE A U D IO AMPLIFIER APPLICATIONS A N D R EC O M M END ED FOR THE FIRST STAGES OF MC HEAD AMPLIFIERS . 5.1 M A X . â'¢ Very Low Noise in the Region of Low Signal Source Impedance Equivalent Input Noise Voltage : En = 0.6nV / VHz (Typ.) Low Pulse Noise. Low 1 / f Noise Low Base Spreading Resistance : r ^ â'™ = 2 .0 0 (Typ.) Complementary to 2SC3329 â'¢ â -
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Abstract: 2SC3329 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3329 For Low Noise Audio Amplifier Applications and Recommended for The First Stages of MC Head Amplifiers · · · · Very low noise in the region of low signal source impedance equivalent input noise voltage: En = 0.6 nV/Hz1/2 (typ.) Low pulse noise. Low 1/f noise Low base spreading resistance: rbb' = 2.0 (typ.) Complementary to 2SA1316 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-base Toshiba
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Abstract: TOSHIBA 2SC3329 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) 2 S C 3 3 2 9 FOR LOW NOISE AUDIO AMPLIFIER APPLICATIONS AND RECOMMENDED FOR THE FIRST STAGES OF MC HEAD AMPLIFIERS â'¢ Very Low Noise in the Region of Low Signal Source Impedance Equivalent Input Noise Voltage : En = 0. 6nV/V~Hz (Typ.) â'¢ Low Pulse Noise. Low 1 / f Noise â'¢ Low Base Spreading Resistance : r^b' = 2.0 O (Typ.) â'¢ Complementary to 2SA1316 MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC SYMBOL -
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961001EAA1
Abstract: TOSHIBA 2SC3329 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) 2 S C 3 3 2 9 FOR LOW NOISE AUDIO AMPLIFIER APPLICATIONS AND RECOMMENDED FOR THE FIRST STAGES OF MC HEAD AMPLIFIERS â'¢ Very Low Noise in the Region of Low Signal Source Impedance Equivalent Input Noise Voltage : En = 0. 6nV/V~Hz (Typ.) â'¢ Low Pulse Noise. Low 1 / f Noise â'¢ Low Base Spreading Resistance : r^b' = 2.0 O (Typ.) â'¢ Complementary to 2SA1316 MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC SYMBOL -
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m 3329
Abstract: T O SH IB A 2SC3329 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) 1çC 337Q Unit in mm FOR LOW NOISE AUDIO AMPLIFIER APPLICATIONS AND RECOMMENDED FOR THE FIRST STAGES OF MC HEAD AMPLIFIERS 5.1 M AX. â'¢ Very Low Noise in the Region of Low Signal Source Impedance Equivalent Input Noise Voltage :En = 0.6nV/V Hz (Typ.) â'¢ Low Pulse Noise. Low 1 / f Noise â'¢ Low Base Spreading Resistance : r^bâ'™ = 2.0 Q (Typ.) â'¢ Complementary to 2SA1316 0.45 0.55 M A X. 0.45 -
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Abstract: 2SC3329 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3329 For Low Noise Audio Amplifier Applications and Recommended for The First Stages of MC Head Amplifiers · Very low noise in the region of low signal source impedance equivalent input noise voltage: En = 0.6 nV/Hz1/2 (typ.) · Low pulse noise. Low 1/f noise · Low base spreading resistance: rbb' = 2.0 (typ.) · Unit: mm Complementary to 2SA1316 Maximum Ratings (Ta = 25°C) Characteristics Symbol Toshiba
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