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2Sa1316 complementary

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Abstract: 2SA1316 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1316 For Low Noise Audio Amplifier Applications and Recommended for the First Stages of MC Head Amplifiers · · · · Very , .) Complementary to 2SC3329 2SC3329 Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage , : hFE classification GR: 200~400, BL: 350~700 1 2003-03-24 2SA1316 2 2003-03-24 2SA1316 3 2003-03-24 2SA1316 RESTRICTIONS ON PRODUCT USE 000707EAA 000707EAA · TOSHIBA is ... Toshiba
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315.16 Kb

2SA1316 2SC3329 TEXT
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Abstract: TO SHIBA TOSHIBA TRANSISTOR 2SA1316 FOR LO W NOISE AUDIO AM PLIFIER APPLICATIONS AND 2SA1316 SILICON PNP EPITAXIAL TYPE (PCT PROCESS) Unit in mm . 5.1 M AX. RECOM M ENDED FOR THE , Spreading Resistance : r ^ '= 2.0O (Typ.) · Complementary to 2SC3329 2SC3329 M A X IM U M RATINGS (Ta = 25 , TO SHIBA 2SA1316 ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC Collector Cut-off , Ic (mA) DC CURRENT GAIN hFE tr O 2SA1316 OJ ... OCR Scan
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4 pages,
222.29 Kb

X10-5 2SC3329 2SA1316 TEXT
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Abstract: 2SA1316 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1316 For Low Noise Audio Amplifier Applications and Recommended for the First Stages of MC Head Amplifiers Unit: mm , : rbb' = 2.0 (typ.) · Complementary to 2SC3329 2SC3329 Maximum Ratings (Ta = 25°C) Characteristics , dB GR: 200~400, BL: 350~700 1 2003-03-24 2SA1316 2 2003-03-24 2SA1316 3 2003-03-24 2SA1316 RESTRICTIONS ON PRODUCT USE 000707EAA 000707EAA · TOSHIBA is continually working to ... Toshiba
Original
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4 pages,
152.76 Kb

2SC3329 2SC332 2sa131 2SA1316 TEXT
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Abstract: 2SA1316 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1316 For Low Noise Audio Amplifier Applications and Recommended for the First Stages of MC Head Amplifiers · · · · Very low noise in the region of low signal source impedance equivalent input noise voltage: En = 0.6 nV/Hz1 , .) Complementary to 2SC3329 2SC3329 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-base , 2007-11-01 2SA1316 2 2007-11-01 2SA1316 3 2007-11-01 2SA1316 RESTRICTIONS ON ... Toshiba
Original
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4 pages,
615.96 Kb

2SA1316 2SC3329 TEXT
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Abstract: TOSHIBA TOSHIBA TRANSISTOR 2SA1316 FOR LOW NOISE AUDIO AMPLIFIER APPLICATIONS AND 2SA1316 SILICON PNP EPITAXIAL TYPE (PCT PROCESS) Unit in mm . 5.1 MAX. RECOMMENDED FOR THE FIRST STAGES OF , Resistance : r^b'= 2.00 (Typ.) Complementary to 2SC3329 2SC3329 0.55 MAX. 0.45 n o 1.27 1.27 M AXIM UM , vveigni, ; v .¿±g °C °C TTT _ · 1_ . A m i 2001-05-31 TOSHIBA 2SA1316 ELECTRICAL , 0 U 11 Ul 2SA1316 TOSHIBA 2SA1316 RESTRICTIONS ON PRODUCT USE 000707EAA 000707EAA · ... OCR Scan
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5 pages,
238.95 Kb

X10-5 A131 2SC3329 2SA1316 TEXT
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Abstract: TOSHIBA TO SHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) 2SA1316 n û m fi FOR LO W NOISE A U D IO AMPLIFIER APPLICATIONS A N D R EC O M M END ED FOR THE FIRST STAGES OF MC HEAD , Resistance : rbjy = 2.00 (Typ.) · Complementary to 2SC3329 2SC3329 M A X IM U M RATINGS (Ta = 2 5°C) ft A'i I 0 , t t o c h a n g e w i t h o u t n o tic e . 1997 04-10 - 1/4 TOSHIBA 2SA1316 SYMBOL , £ (mA) DC CURRENT GAIN COLLECTOR CURRENT l£ (jj o A) 2SA1316 UJ ... OCR Scan
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4 pages,
99.27 Kb

2SA1316 TEXT
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Abstract: TO SHIBA 2SA1316 2 S A 1 316 TO S H IB A TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) Unit in mm FOR LO W NOISE A U D IO AMPLIFIER APPLICATIONS A N D R EC O M M END ED FOR , / f Noise Low Base Spreading Resistance : r ^ ’ = 2 .0 0 (Typ.) Complementary to 2SC3329 2SC3329 • â , /4 TO SH IBA 2SA1316 = 25°C) SYMBOL ELECTRICAL CHARACTERISTICS 'Ta CHARACTERISTIC , » 33 M ET O Ic (M> 2SA1316 UJ ... OCR Scan
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4 pages,
85.31 Kb

2SA1316 TEXT
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Abstract: TOSHIBA 2SC3329 2SC3329 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) 2 S C 3 3 2 9 FOR LOW NOISE AUDIO AMPLIFIER APPLICATIONS AND RECOMMENDED FOR THE FIRST STAGES OF MC HEAD AMPLIFIERS • Very Low Noise in the Region of Low Signal Source Impedance Equivalent Input Noise Voltage : En = 0. 6nV/V~Hz (Typ.) • Low Pulse Noise. Low 1 / f Noise • Low Base Spreading Resistance : r^b' = 2.0 O (Typ.) • Complementary to 2SA1316 MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC SYMBOL ... OCR Scan
datasheet

4 pages,
206.13 Kb

2SA1316 2SC3329 TEXT
datasheet frame
Abstract: 2SC3329 2SC3329 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3329 2SC3329 For Low Noise Audio Amplifier Applications and Recommended for The First Stages of MC Head Amplifiers · · · · Very low noise in the region of low signal source impedance equivalent input noise voltage: En = 0.6 nV/Hz1/2 (typ.) Low pulse noise. Low 1/f noise Low base spreading resistance: rbb' = 2.0 (typ.) Complementary to 2SA1316 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-base ... Toshiba
Original
datasheet

4 pages,
637.68 Kb

2SC3329 2SA1316 TEXT
datasheet frame
Abstract: TOSHIBA 2SC3329 2SC3329 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) 2 S C 3 3 2 9 FOR LOW NOISE AUDIO AMPLIFIER APPLICATIONS AND RECOMMENDED FOR THE FIRST STAGES OF MC HEAD AMPLIFIERS • Very Low Noise in the Region of Low Signal Source Impedance Equivalent Input Noise Voltage : En = 0. 6nV/V~Hz (Typ.) • Low Pulse Noise. Low 1 / f Noise • Low Base Spreading Resistance : r^b' = 2.0 O (Typ.) • Complementary to 2SA1316 MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC SYMBOL ... OCR Scan
datasheet

5 pages,
235.14 Kb

m 3329 2SA1316 2SC3329 TEXT
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