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Part : 2STC4467 Supplier : STMicroelectronics Manufacturer : Future Electronics Stock : - Best Price : $1.25 Price Each : $1.96
Part : 2STC4467 Supplier : STMicroelectronics Manufacturer : Chip1Stop Stock : 576 Best Price : $1.6181 Price Each : $1.6181
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2STC4467 Datasheet

Part Manufacturer Description PDF Type
2STC4467 STMicroelectronics High power NPN epitaxial planar bipolar transistor Original
2STC4467 STMicroelectronics High power NPN epitaxial planar bipolar transistor Original

2STC4467

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: 2STC4467 High power NPN epitaxial planar bipolar transistor Preliminary data Features , diagram Table 1. Device summary Marking 2STC4467 Package TO-3P Packaging Tube Order code 2STC4467 November 2007 Rev 1 1/7 www.st.com 7 This is preliminary information on a new product , . Electrical ratings 2STC4467 1 Table 2. Symbol VCBO VCEO VEBO IC ICM PTOT Tstg TJ Electrical , resistance junction-case _ _max Value 1.563 Unit °C/W 2/7 2STC4467 Electrical STMicroelectronics
Original
2STA1694

2STA1694

Abstract: 2STC4467 2STC4467 High power NPN epitaxial planar bipolar transistor Features High breakdown voltage , 2STC4467 2STC4467 TO-3P Tube April 2008 Rev 2 1/7 www.st.com 7 2STC4467 , data Parameter Thermal resistance junction-case _ _max 2STC4467 2 , 3 2STC4467 Package mechanical data In order to meet environmental requirements, ST offers , 2STC4467 Package mechanical data TO-3P Mechanical data DIM. A A1 A2 b b1 b2 c D D1 E E1
STMicroelectronics
Original
JESD97

2STA1694

Abstract: 2STC4467 2STC4467 High power NPN epitaxial planar bipolar transistor Features High breakdown voltage , Packaging 2STC4467 2STC4467 TO-3P Tube February 2009 Rev 3 1/8 www.st.com 8 2STC4467 Electrical ratings 1 Electrical ratings Table 2. Absolute maximum ratings Symbol , temperature Thermal data Parameter Thermal resistance junction-case _ _max 2STC4467 , V 140 20 MHz 1. Pulsed duration = 300 µs, duty cycle 1.5% 3/8 2STC4467
STMicroelectronics
Original
Abstract: 2STC4467 High power NPN epitaxial planar bipolar transistor Features â  High breakdown , Marking Package Packaging 2STC4467 2STC4467 TO-3P Tube February 2009 Rev 3 1/8 www.st.com 8 2STC4467 Electrical ratings 1 Electrical ratings Table 2. Absolute maximum , 1.563 °C/W 2STC4467 2 Electrical characteristics Electrical characteristics (Tcase = 25 , O 3/8 2STC4467 Electrical characteristics 2.1 Electrical characteristics (curves STMicroelectronics
Original

2STA1694

Abstract: 2STC4467 2STA1694 High power PNP epitaxial planar bipolar transistor Features High breakdown voltage VCEO = -120 V Complementary to 2STC4467 Fast-switching speed Typical ft = 20 MHz Fully characterized at 125 oC 3 2 Applications 1 TO-3P Audio power amplifier Description The device is a PNP transistor manufactured using new BiT-LA (Bipolar transistor for linear amplifier) technology. The resulting transistor shows good gain linearity behaviour. Table 1. Figure
STMicroelectronics
Original
Abstract: 2STA1694 High power PNP epitaxial planar bipolar transistor Preliminary data Features High breakdown voltage VCEO =-120 V Complementary to 2STC4467 Fast-switching speed Typical ft =20MHz Fully characterized at 125 oC 3 2 1 Applications Audio power amplifier TO-3P Description The device is a NPN transistor manufactured using new BiT-LA (Bipolar transistor for linear amplifier) technology. The resulting transistor shows good gain linearity behaviour. Figure 1. Internal schematic STMicroelectronics
Original

2STA1694

Abstract: 2STC4467 2STA1694 High power PNP epitaxial planar bipolar transistor Features High breakdown voltage VCEO = -120 V Complementary to 2STC4467 Fast-switching speed Typical ft = 20 MHz Fully characterized at 125 oC 3 2 1 Applications TO-3P Audio power amplifier Description Figure 1. Internal schematic diagram The device is a PNP transistor manufactured using new BiT-LA (Bipolar transistor for linear amplifier) technology. The resulting transistor shows good
STMicroelectronics
Original
Abstract: 2STA1694 High power PNP epitaxial planar bipolar transistor Features â  High breakdown voltage VCEO = -120 V â  Complementary to 2STC4467 â  Fast-switching speed â  Typical ft = 20 MHz â  Fully characterized at 125 oC (s) ct du o 3 Applications â  ete ol Audio power amplifier Description bs O Figure 1. The device is a PNP transistor manufactured using new BiT-LA (Bipolar transistor for linear amplifier) technology. The STMicroelectronics
Original

mn2510

Abstract: 2sC5200, 2SA1943, 2sc5198 * 2STC5948* 2STC5242* 2STC5200* 2STW4468 2STC4468 2STC4467* 2STC2510* TIP35C TIP35CW 2STW4466
STMicroelectronics
Original
mn2510 2sC5200, 2SA1943, 2sc5198 sanken mn2510 TRANSISTOR REPLACEMENT GUIDE hsd882s KEC SOT89 2sc5198 cross references STN878 STN724 STN690A STN749 STN888 STN826

schematic diagram inverter lcd monitor dell

Abstract: hp laptop charging CIRCUIT diagram 150 2STC5949 2STA2121 250 V / 17 A 220 2STC4467 2STC4468 2STC2510 2STC5242 2STC5948
STMicroelectronics
Original
schematic diagram inverter lcd monitor dell hp laptop charging CIRCUIT diagram dell laptop battery pinout DELL laptop inverter board schematic hp laptop battery pinout testing motherboards using multi meter STV200N55F3 STV250N55F3 STP03D200 EMIF06-AUD01F2 EMIF10-LCD03F3