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Part : 2SK740(E) Supplier : Renesas Electronics Manufacturer : Chip1Stop Stock : 46 Best Price : $40.7000 Price Each : $40.7000
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2SK740 Datasheet

Part Manufacturer Description PDF Type
2SK740 Hitachi Semiconductor Mosfet Guide Original
2SK740 Hitachi Semiconductor Silicon N-Channel MOS FET Original
2SK740 Hitachi Semiconductor Silicon N-Channel MOS FET Original
2SK740 Renesas Technology Silicon N-Channel MOS FET Original
2SK740 Renesas Technology Silicon N Channel MOS FET Original
2SK740 Hitachi Semiconductor Power Transistors Data Book Scan
2SK740 N/A FET Data Book Scan
2SK740 N/A Shortform Datasheet & Cross References Data Scan
2SK740 N/A Catalog Scans - Shortform Datasheet Scan
2SK740 N/A Catalog Scans - Shortform Datasheet Scan
2SK740 Sanyo Semiconductor HF amplifiers low frequency amplifiers analog switches Scan

2SK740

Catalog Datasheet MFG & Type PDF Document Tags

2SK740

Abstract: 2SK740 Silicon N-Channel MOS FET Application TO­220AB High speed power switching , - * PW 10 µs, duty cycle 1 % * Value at TC = 25 °C 2SK740 Table 2 Electrical , - * Pulse Test 2SK740 Maximum Safe Operation Area Power vs. Temperature Derating 100 , 2 4 6 8 10 Gate to Source Voltage VGS (V) 2SK740 Static Drain to Source on State , (A) 10 20 2SK740 2SK740 2SK740 Hitachi Semiconductor
Hitachi Semiconductor
Original
Abstract: 2SK740 Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features â'¢ Low on-resistance â'¢ High speed switching â'¢ Low drive current , driver Outline T O -?n A R 1. Gate G 2. Drain o (Flange) 3. Source OS 2SK740 , 2SK740 HITACHI 3 2SK740 HITACHI 4 2SK740 Body to Drain Diode Reverse Recovery Tim e , ¶ > o W _o 0 "H i 0 Drain Current lD (A) Gate Charge Qg (nc) HITACHI 5 2SK740 -
OCR Scan

Hitachi DSA00279

Abstract: 2SK740 Silicon N-Channel MOS FET Application High speed power switching Features · · · · · Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter and motor driver Outline 2SK740 Absolute Maximum Ratings (Ta = 25 , VGS(off) RDS(on) |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr 2 2SK740 3 2SK740 4 2SK740 5 2SK740 6 2SK740 When using this document, keep the following in mind
Hitachi
Original
Hitachi DSA00279
Abstract: 2SK740 Silicon N-Channel MOS FET HITACHI Application H igh speed pow er sw itching , Suitable for sw itching regulator, D C -D C converter and m otor driver Outline 165 2SK740 , 2SK740 Power vs. Temperature Derating Maximum Safe Operation Area Channel Dissipation P ch (W , 167 2SK740 Drain to Source Saturation Voltage vs. Gate to Source Voltage i o Oí 1 1 ! 1 : ! 1 1 , ) HITACHI 168 2SK740 Body to Drain Diode Reverse Recovery Time 500 tr r (ns) Typical Capacitance vs -
OCR Scan

2SK740

Abstract: 2SK740-E 0.5 ± 0.1 2.54 ± 0.5 2.54 ± 0.5 Ordering Information Part Name 2SK740-E Quantity 500 , 2SK740 Silicon N Channel MOS FET REJ03G0904-0200 (Previous: ADE-208-1242) Rev.2.00 Sep 07 , 2SK740 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Symbol VDSS Drain , IF = 10 A, VGS = 0, diF/dt = 50 A/µs 2SK740 Main Characteristics Power vs. Temperature , (S) Static Drain to Source on State Resistance RDS (on) () 2SK740 0.5 VGS = 10 V Pulse
Renesas Technology
Original
PRSS0004AC-A

Hitachi DSA0015

Abstract: 2SK740 2SK740 Silicon N-Channel MOS FET November 1996 Application High speed power switching , 1 2 3 1. Gate 2. Drain (Flange) 3. Source G S 2SK740 Absolute Maximum Ratings , 1 1 2SK740 Power vs. Temperature Derating Maximum Safe Operation Area 100 10 Drain , Gate to Source Voltage VGS (V) 3 2SK740 Static Drain to Source on State Resistance vs. Drain , (A) 10 20 2SK740 Body to Drain Diode Reverse Recovery Time Typical Capacitance vs
Hitachi
Original
Hitachi DSA0015 D-85622
Abstract: on these materials or the products contained therein. 2SK740 Silicon N-Channel MOS FET ADE , ) 3. Source S 2SK740 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate , (on) tr t d(off) tf VDF t rr 2 2SK740 Power vs. Temperature Derating 60 Channel Dissipation , 0 2 4 6 8 10 Gate to Source Voltage VGS (V) 3 2SK740 Drain to Source Saturation Voltage , Current ID (A) 10 20 4 2SK740 Body to Drain Diode Reverse Recovery Time 500 Reverse Recovery Hitachi Semiconductor
Original

2SK740

Abstract: DSA003780 2SK740 Silicon N-Channel MOS FET Application High speed power switching Features · · · , 1. Gate 2. Drain (Flange) 3. Source G S 2SK740 Absolute Maximum Ratings (Ta = 25 , = 50 A/µs 2SK740 Power vs. Temperature Derating Maximum Safe Operation Area 100 10 , Gate to Source Voltage VGS (V) 3 2SK740 Static Drain to Source on State Resistance vs. Drain , 2SK740 Body to Drain Diode Reverse Recovery Time Typical Capacitance vs. Drain to Source Voltage
Hitachi Semiconductor
Original
DSA003780

Hitachi DSA00276

Abstract: 2SK740 Silicon N-Channel MOS FET ADE-208-1242 (Z) 1st. Edition Mar. 2001 Application High , -220AB D G 1 2 3 1. Gate 2. Drain (Flange) 3. Source S 2SK740 Absolute Maximum Ratings (Ta , test VGS(off) RDS(on) |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr 2 2SK740 Power vs , 2SK740 Drain to Source Saturation Voltage vs. Gate to Source Voltage 5 Drain to Source Saturation , Temperature TC (°C) 160 0.5 1.0 2 5 Drain Current ID (A) 10 20 4 2SK740 Body to Drain
Hitachi Semiconductor
Original
Hitachi DSA00276
Abstract: Information Part Name 2SK740-E Quantity 500 pcs Shipping Container Box (Sack) Note: For some , 2SK740 Silicon N Channel MOS FET REJ03G0904-0200 (Previous: ADE-208-1242) Rev.2.00 Sep 07 , 3 2SK740 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Symbol VDSS , 0, diF/dt = 50 A/µs 2SK740 Main Characteristics Power vs. Temperature Derating Maximum , yfs (S) Static Drain to Source on State Resistance RDS (on) (â"¦) 2SK740 0.5 VGS = 10 V Renesas Technology
Original
Abstract: Ordering Information Part Name 2SK740-E Quantity 500 pcs Shipping Container Box (Sack) Note , developed or manufactured by or for Renesas Electronics. 2SK740 Silicon N Channel MOS FET REJ03G0904 , 6 2 1. Gate 2. Drain (Flange) 3. Source S 3 2SK740 Absolute Maximum Ratings (Ta , "¦ IF = 10 A, VGS = 0 IF = 10 A, VGS = 0, diF/dt = 50 A/µs 2SK740 Main Characteristics Power , Transfer Admittance yfs (S) Static Drain to Source on State Resistance RDS (on) (â"¦) 2SK740 Renesas Technology
Original

2SK740

Abstract: 2SK740-E 0.5 ± 0.1 2.54 ± 0.5 2.54 ± 0.5 Ordering Information Part Name 2SK740-E Quantity 500 , . 2SK740 Silicon N Channel MOS FET REJ03G0904-0200 (Previous: ADE-208-1242) Rev.2.00 Sep 07, 2005 , .2.00 Sep 07, 2005 page 1 of 6 2 1. Gate 2. Drain (Flange) 3. Source S 3 2SK740 Absolute , IF = 10 A, VGS = 0, diF/dt = 50 A/µs 2SK740 Main Characteristics Power vs. Temperature , (S) Static Drain to Source on State Resistance RDS (on) () 2SK740 0.5 VGS = 10 V Pulse
Renesas Technology
Original

2sk1299

Abstract: 2SK513 2SK740 2SK1301 2SK1306 2SK1620 2SK1918 2SJ280 2SJ297 2SK822 2SK1302 2SK1307 2SK1623 2SK622 2SK1303 , 2SK740 - 150 0.12 0.15 7 70 110 1200 2SK741 - 250 ±20 7 50 0.4 0.55 4.5 50 120 820 2SK552 - 450
-
OCR Scan
2SK579 2SK580 2SK1151 2SK1152 2SK1153 2SK513 2sk1299 2SK554 HITACHI 2SJ* TO-3 flyback 200W 2SK1154

200W MOSFET POWER AMP

Abstract: HA11511CNT 2SK740 2SK1301 2SK1306 2SK1620 2SK1918 2SJ280 2SJ297 2SK822 2SK1302 2SK1307 2SK1623 2SK622 2SK1303 , /1450 2SK740 - 150 0.12 0.15 7 70 110 1200 2SK741 - 250 ±20 7 50 0.4 0.55 4.5 50 120 820
-
OCR Scan
2SK1225 2SK1770 200W MOSFET POWER AMP HA11511CNT 2sk mosfet 2SK1327 2sc2610 2SK1862 2SK1155 2SK1156 2SK1157 2SK1158 2SK1313

flyback 200w

Abstract: 2SK1635 2SK740 2SK1301 2SK1306 2SK1620 2SK1918 2SJ280 2SJ297 2SK822 2SK1302 2SK1307 2SK1623 2SK622 2SK1303
-
OCR Scan
2SK975 2SK1094 2SK1635 2SK1671 dc dc flyback 200w 2SK119 mosfet hitachi 2sk1328 2SK1314 2SK1540 2SK1541 2SK1626 2SK1159 2SK1160

LM 739 N

Abstract: 2SK722 10« 60 1 2. 5 10 lm 1 10 1 2SK740 BJ£ HS PSW MOS N E 150 DSS ±20 s 10 D 50 ±10// ±16 0. 25 , 0.15 10 5 116B GDS 2SK740 820 115 0 10 0. 55 10 4 116B GDS 2SK741 285 llOmax 10 0.22
-
OCR Scan
2SK705 2SK707 2SK708 2SK709 2SK712 2SK713 LM 739 N 2SK722 2SK734 2SK733 2SK732 2SK710 2SK711

2SK1637

Abstract: 2SK2097 . 157
-
OCR Scan
2SK1637 2SK2097 2SK series 2SK2203 1018 636 transistor+2sk 2SK213 2SK214 2SK215 2SK216 2SK410 2SK1056

2SK1620

Abstract: 2SK740 - * Pulse Test See characteristic curves of 2SK740. 2SK1620 L , 2SK1620 S Power vs
Hitachi Semiconductor
Original
Abstract: See characteristic curves o f 2SK740. HITACHI 508 2SK1620ÇL), 2SK1620(S) Power vs -
OCR Scan
2SK1620QL

2cv1

Abstract: 2SJ113 2SK740 2SK1301 2SK1306 2SK1620 2SK1918 2SJ280 2SJ297 2SK822 2SK1302 2SK1307 2SK1623 2SK622 2SK1303
-
OCR Scan
2SJ214 2SK416 2SJ113 2SK414 2cv1 2SK1665 2sj119 121A-4 2SK1161 2SK1162 2SK1163 2SK1206 2SK1315 2SK1316
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