NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Part | Manufacturer | Description | Type | Ordering |
| 2SK615 | N/A | FET Data Book |
2 pages, |
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| 2SK615 | N/A | Shortform IC and Component Datasheets (Plus Cross Reference Data) |
1 pages, |
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| 2SK615 | Panasonic | N-Channel MOS FET |
3 pages, |
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| 2SK615 | Panasonic | Silicon N-Channel MOS FET |
2 pages, |
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| 2SK615 | Panasonic | Silicon MOS FETs |
1 pages, |
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| 2SK615 | Panasonic | TRANS MOSFET N-CH 80V 0.5A 3SC-71 |
3 pages, |
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| 2SK615 | Panasonic | FETs, IPD, IGBTs, GaAs MMICs |
1 pages, |
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| 2SK615 | N/A | Shortform Datasheet & Cross References Data |
1 pages, |
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| Catalog Datasheet Results | Type | Document Tags |
| Abstract: Silicon MOS FETs (Small Signal) 2SK615 Silicon N-Channel MOS FET For switching unit: mm 6.9�1 2.5�1 1.0 1.0 1.5 R0.9 R0.9 0.85 s Absolute Maximum Ratings (Ta = 25癈) Symbol 0.55�1 Ratings Drain to Source voltage VDS 80 VGSO 20 ID �5 A Max drain current IDP � 2 1 V Drain current 3 V Gate to Source voltage A * 2.5 , ton toff 1 Silicon MOS FETs (Small Signal) 2SK615 PD Ta ID VDS 1.2 1.2 1.0 ... | Original |
2 pages, |
SC-71 2SK615 2SK615 abstract |
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| Abstract: NS1000 000 (2SK615) 2SK0657 2SK0657 No. SMini3-G1 20 2SK0615 2SK0615 (2SK656 2SK656) Package SMini3-G1 ... | Original |
1 pages, |
2SK0601 2SK0614 2SK0615 2SK0655 2SK0656 2sk60 2SK601 2SK614 2SK615 2SK655 2SK656 NS-B1 2SK0664 SSSMini3-F1 transistor 2SK0601 abstract |
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| Abstract: 0 500» D 750m lOOn 20 10« 60 1. 5 3. 5 VGS 1» 300» 15 200» 2SK615 KT SW MOS H E 80 DS 20 0 500m D , VDD=30V. RD=68Q 195 GDS 2SK615 ... | OCR Scan |
2 pages, |
2SK585 2SK583 2SK580 2SK579 2SK610 2SK578 2SK591 2SK590 2SK518 2SK519 2SK602 2SK604 2SK608 2SK609 2SK603 2SK578 abstract |
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| Abstract: 2SK614 2SK614 80 20 0.5 750 * 300 2 * 15 * 20 TO-92 D49 2SK615 80 20 0.5 1000 * 300 2 * 15 * 20 M Type D40 ... | OCR Scan |
1 pages, |
FETs Field Effect Transistors 2SJ163 2SJ164 2SK1103 2SK1104 2SK198 2SK301 2SK374 2SK662 2SK663 3SK144 3SK286 2SJ0385 3SK268 2SJ0385 abstract |
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| Abstract: 750 * 300 2 * 15 * 20 TO-92 D49 2SK615 80 20 0.5 1000 * 300 2 * 15 * 20 M Type D40 2SK620 2SK620 50 8 ... | OCR Scan |
1 pages, |
CAMERA MOS 2SJ163 2SJ164 2SJ364 2SK1103 2SK1104 2SK198 2SK301 2SK374 2SK662 2SK663 3SK286 2SJ0385 3SK268 3SK269 2SJ0385 abstract |
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| Abstract: Silicon MOS FETs (Small Signal) 2SK0615 2SK0615 (2SK615) Silicon N-Channel MOS FET For switching Unit: mm M Di ain sc te on na tin nc ue e/ d I Features G Low ON-resistance G High-speed switching G Allowing to be driven directly by CMOS and TTL G M type package, allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. (1.0) (0.4) V A Max drain current IDP Allowable power dissipation PD * Channel temperature Storage ... | Original |
3 pages, |
SC-71 2SK615 2SK0615 2SK0615 abstract |
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| Abstract: Silicon MOS FETs (Small Signal) 2SK0615 2SK0615 (2SK615) Silicon N-Channel MOS FET For switching Unit: mm I Features G Low ON-resistance G High-speed switching G Allowing to be driven directly by CMOS and TTL G M type package, allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 20 A 1 (2.5) IDP ±1 A Allowable power dissipation PD * 1 Tch 150 Tstg -55 to +150 2 3 1: Source 2: Drain 3: Gate EIAJ ... | Original |
4 pages, |
SC-71 2SK615 2SK0615 2SK0615 abstract |
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| Abstract: Silicon MOS FETs (Small Signal) 2SK0615 2SK0615 (2SK615) Silicon N-Channel MOS FET For switching Unit: mm I Features G Low ON-resistance G High-speed switching G Allowing to be driven directly by CMOS and TTL G M type package, allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 20 A 1 (2.5) IDP ±1 A Allowable power dissipation PD * 1 Tch 150 Tstg -55 to +150 2 3 1: Source 2: Drain 3: Gate EIAJ ... | Original |
3 pages, |
SC-71 2SK615 2SK0615 2SK0615 abstract |
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| Abstract: Silicon MOS FETs (Small Signal) 2SK0615 2SK0615 (2SK615) Silicon N-Channel MOS FET For switching Unit: mm I Features 2.5�1 6.9�1 Drain to Source voltage 80 20 V �5 A 1 (2.5) A 1 150 -55 to +150 3 1: Source 2: Drain 3: Gate EIAJ: SC-71 SC-71 M-A1 Package (2.5) 癈 Tstg 2 W Tch Storage temperature � PD * Channel temperature 0.45�05 0.55�1 IDP Allowable power dissipation (0.85) ea s ht e v tp is :// it pa fo na llo so ... | Original |
3 pages, |
vth for mos 0,9 SC-71 2SK615 2SK0615 2SK0615 abstract |
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| Abstract: Silicon MOS FETs (Small Signal) 2SK0615 2SK0615 (2SK615) Silicon N-Channel MOS FET For switching unit: mm I Features 6.9�1 1.0 0.85 Unit VDS 80 V Gate to Source voltage VGSO 20 V Drain current ID �5 A Max drain current IDP � A Allowable power dissipation PD* 1 W Channel temperature Tch 150 癈 Storage temperature Tstg -55 to +150 4.5�1 癈 0.55�1 3 2 2.5 0.45�05 1 2.5 1.25�05 Ratings ... | Original |
3 pages, |
SC-71 2SK615 2SK0615 2SK0615 abstract |
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| Part | Similar Part | Notes |