2002/95/EC 2SK3938G SJF00071AED 2SK3938 - Datasheet Archive

 

Silicon MOSFETs (Small Signal) 2SK3938G Silicon N-channel MOSFET For switching circuits Package High-speed switching SSSMini type

 

This product complies with the RoHS Directive (EU 2002/95/EC 2002/95/EC). Silicon MOSFETs (Small Signal) 2SK3938G 2SK3938G Silicon N-channel MOSFET For switching circuits Package High-speed switching SSSMini type package, allowing downsizing of the equipment and automatic insertion through the tape packing Code SSSMini3-F2 Marking Symbol: 6U Name Pin 1: Gate 2: Source 3: Drain ue pl d in ea an c se ed lud pl vi an m m es si tf ed ain ai fo ol t n l ht low disc dis ena ten low tp in o co n an in :// g nt n ce c g pa U in tin t e fo na RL ue ue ype typ ur so a d t d e Pr od ty ni bo yp p c. u e e uc ne t l d tl ife t/s ate cy c/ st en in cl e fo st rm ag at e. io n. M Di ain sc te on na tin nc ue e/ d Features Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit Drain-source surrender voltage VDSS 30 V Gate-source surrender voltage VGSS ±12 V ID 100 mA IDP 200 mA PD 100 mW Tch 125 °C Tstg ­55 to +125 °C Drain current Peak drain current Power dissipation Channel temperature Storage temperature Electrical Characteristics Ta = 25°C±3°C Parameter Symbol Drain-source surrender voltage Min Typ Max 1.0 mA VGS = ±10 V, VDS = 0 ±10 mA VTH ID = 1.0 mA, VDS = 3 V 1.0 1.5 V ID = 10 mA, VGS = 2.5 V 7 12 ID = 10 mA, VGS = 4.0 V 5 8 RDS(on) co nt in Drain-source ON resistance VDS = 20 V, VGS = 0 IGSS Gate threshold voltage ID = 10 mA, VGS = 0 IDSS Gate-source cutoff current Forward transfer admittance is Yfs e/ D Short-circuit forward transfer capacitance (Common source) an c Short-circuit output capacitance (Common source) en ai nt 0.5 ID = 10 mA, VDS = 3 V, f = 1 kHz 20 M W 55 mS 12 pF pF 6 VDS = 3 V, VGS = 0, f = 1 MHz Crss Turn-on time * V 10 Ciss Coss Reverse transfer capacitance (Common source) 30 Unit VDSS Drain-source cutoff current pF ton VDD = 3 V, VGS = 0 V to 3 V, ID = 10 mA 350 ns toff VDD = 3 V, VGS = 3 V to 0 V, ID = 10 mA 350 ns Pl Turn-off time Conditions * Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. * : ton , toff measurement circuit VOUT 90% 290 10% VGS VOUT VGS = 0 V to 3 V 50 100 µF VDD = 3 V ton Publication date: June 2007 SJF00071AED SJF00071AED 10% 90% toff 1 This product complies with the RoHS Directive (EU 2002/95/EC 2002/95/EC). 2SK3938G 2SK3938G 2SK3938 2SK3938_ PD-Ta 2SK3938 2SK3938_ ID-VDS PD Ta 2SK3938 2SK3938_ ID-VGS ID VDS ID VGS 120 120 80 40 VGS = 2.8 V 80 2.6 V 2.4 V 40 VDS = 3 V Ta = -25°C 120 Drain current ID (mA) Drain current ID (A) Power dissipation PD (mW) Ta = 25°C 25°C 85°C 80 40 2.2 V 2.0 V 0 0 80 40 0 120 0 4 8 0 12 0 1 2 3 4 Ambient temperature Ta (°C) Drain-source voltage VDS (V) 2SK3938 2SK3938_ Yfs -VGS 2SK3938 2SK3938_ Yfs -ID 2SK3938 2SK3938_ RDS(on)-VGS Yfs ID 120 25°C 85°C 80 40 0 1 2 Gate-source voltage VGS (V) 2 3 RDS(on) VGS 20 VGS = 3 V Ta = 25°C 120 Drain-source ON resistance RDS(on) () Ta = -25°C VDS = 3 V Forward transfer admittance Yfs (mS) Forward transfer admittance Yfs (mS) Yfs VGS 0 5 Gate-source voltage VGS (V) 80 40 0 0 20 40 60 80 Drain current ID (mA) SJF00071AED SJF00071AED 100 ID = 10 mA 16 12 8 Ta = 85°C 4 0 25°C -25°C 0 4 8 Gate-source voltage VGS (V) 12 This product complies with the RoHS Directive (EU 2002/95/EC 2002/95/EC). SSSMini3-F2 Unit: mm 0.20 ±0.05 1.20 ±0.05 +0.05 0.30 -0.02 5° 0.80 ±0.05 1.20 ±0.05 3 2 1 +0.05 0.20 -0.02 (0.4) +0.05 0.13 -0.02 (0.4) (0.27) 0.80 ±0.05 (0.5) 0 to 0.05 0.51 ±0.04 5° Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2) The technical information described in this book is intended only to show the main characteristics and application circuit examples of the products, and no license is granted under any intellectual property right or other right owned by our company or any other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other company which may arise as a result of the use of technical information described in this book. (3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: ­ Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. ­ Any applications other than the standard applications intended. (4) The products and product specifications described in this book are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions (operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS, thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages. (7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd.