| Abstract: 2SK3685-01 200309 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features High speed switching No secondary breadown Avalanche-proof Low , Typ. Max. 0.532 50.0 Units 癈/W 癈/W 1 2SK3685-01 FUJI POWER MOSFET , 125 150 2 2SK3685-01 FUJI POWER MOSFET Typical Gate Charge Characteristics VGS=f(Qg , ] 3 2SK3685-01 10 FUJI POWER MOSFET Maximum Avalanche Current Pulsewidth IAV=f(tAV ... |
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125MH 2SK3685-01 2SK3685-01 abstract |
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| Abstract: 2SK3685-01 200401 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features High speed switching No secondary breadown Avalanche-proof Low , 1 2SK3685-01 FUJI POWER MOSFET Characteristics Allowable Power Dissipation PD=f(Tc , -25 0 25 50 Tch [°C] 75 100 125 150 2 2SK3685-01 FUJI POWER MOSFET , 50 75 100 125 150 starting Tch [°C] 3 2SK3685-01 10 FUJI POWER MOSFET ... |
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2SK3685-01 2SK3685-01 abstract |
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| Abstract: PRELIM INARY Fuji Power MOSFET SuperFAP-G series Target Specification 2SK3685-01 (500V/0.38/19A 38/19A) 1) Package TO-247 2) Absolute Maximum Ratings (Tc=25 unless otherwise specified) Ratings Units V DS 500 V Continuous Drain Current ID � A Pulsed Drain Current ID(pulse) � A V GS � V IAR 19 A E AS 245.3 mJ 20 5 kV/us kV/us P Dc=25 235 W PD 2.50 W Symbols Items Drain-Source Voltage Gate-Source ... |
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2SK3685-01 38/19A 2SK3685-01 abstract |
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| Abstract: IRF1830 IRF1830G 2SK3680-01 2SK3680-01 2SK3681-01 2SK3681-01 2SK3682-01 2SK3682-01 2SK3683-01MR 2SK3683-01MR 2SK3684-01L 2SK3684-01L 2SK3684-01S 2SK3684-01S 2SK3685-01 2SK3686-01 2SK3686-01 ... |
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fds6675 smd APM2054N equivalent 2sk2850 2SK2837 equivalent 2SK3003 equivalent 2sk3531 FQPF5N60C AP70N03S 2SK3679 2SK3199 STK630F IRF1830G data sheet 2SK2696 STP16NF06 datasheet abstract |
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