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Part : 2SK3680-01 Supplier : Fuji Electric Manufacturer : Allied Electronics & Automation Stock : 12 Best Price : $5.81 Price Each : $8.68
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Part : 2SK368-GR(TE85L,F) Supplier : Toshiba Manufacturer : Chip1Stop Stock : 2,250 Best Price : $4.66 Price Each : $4.66
Part : 2SK368-Y(TE85L,F) Supplier : Toshiba Manufacturer : Chip1Stop Stock : 2,850 Best Price : $4.66 Price Each : $4.66
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Part : 2SK3682-01SC Supplier : Fuji Electric Manufacturer : Chip1Stop Stock : 65 Best Price : $15.20 Price Each : $15.20
Part : 2SK3683-01MRSC Supplier : Fuji Electric Manufacturer : Chip1Stop Stock : 115 Best Price : $14.30 Price Each : $14.30
Part : 2SK3685-01SC Supplier : Fuji Electric Manufacturer : Chip1Stop Stock : 100 Best Price : $20.2000 Price Each : $20.2000
Part : 2SK3686-01SC Supplier : Fuji Electric Manufacturer : Chip1Stop Stock : 80 Best Price : $18.60 Price Each : $18.60
Part : 2SK3687-01MRSC Supplier : Fuji Electric Manufacturer : Chip1Stop Stock : 110 Best Price : $15.30 Price Each : $15.30
Part : 2SK3688-01LSC Supplier : Fuji Electric Manufacturer : Chip1Stop Stock : 100 Best Price : $17.00 Price Each : $17.00
Part : 2SK3689-01SC Supplier : Fuji Electric Manufacturer : Chip1Stop Stock : 95 Best Price : $21.90 Price Each : $21.90
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2SK368 Datasheet

Part Manufacturer Description PDF Type
2SK368 Toshiba N-Channel MOSFET Original
2SK368 N/A Scan
2SK368 N/A FET Data Book Scan
2SK368 Toshiba FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE Scan
2SK368 Toshiba Silicon N channel field effect transistor for audio frequency and high voltage amplifier applications, constant current applications Scan
2SK368 Toshiba Junction FETs / MOSFET / Transistors Scan
2SK3680-01 Fuji Electric N-CHANNEL SILICON POWER MOSFET Original
2SK3680-01 Fuji Electric Power Amplifier, 500V 52A 600W, MOS-FET N-Channel enhanced Original
2SK3681-01 Fuji Electric N-CHANNEL SILICON POWER MOSFET Original
2SK3681-01 Fuji Electric Power Amplifier, 600V 43A 600W, MOS-FET N-Channel enhanced Original
2SK3682-01 Fuji Electric N-CHANNEL SILICON POWER MOSFET Original
2SK3683 Fuji Electric Fuji Power MOSFET SuperFAP-G series Target Specification Original
2SK3683-01MR Fuji Electric Fuji Power MOSFET SuperFAP-G series Target Specification Original
2SK3683-01MR Fuji Electric N-Channel Silicon Power MOSFET Original
2SK3684-01L Fuji Electric N-CHANNEL SILICON POWER MOSFET Original
2SK3684-01S Fuji Electric N-CHANNEL SILICON POWER MOSFET Original
2SK3684-01SJ Fuji Electric N-CHANNEL SILICON POWER MOSFET Original
2SK3685-01 Fuji Electric N-CHANNEL SILICON POWER MOSFET Original
2SK3686-01 Fuji Electric N-Channel Silicon Power MOSFET Original
2SK3687-01MR Fuji Electric N-Channel Silicon Power MOSFET Original
Showing first 20 results.

2SK368

Catalog Datasheet MFG & Type PDF Document Tags

2SK3683

Abstract: 2SK368 2SK368 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK368 Audio Frequency and High Voltage Amplifier Applications Constant Current Applications · High breakdown voltage: VGDS = -100 V (min) · High input impedance: IGSS = -1.0 nA (max) (VGS = -80 V) · Unit: mm , ~1.4 mA, Y: 1.2~3.0 mA, GR (G): 2.6~6.5 mA Marking 1 2003-03-26 2SK368 2 2003-03-26 2SK368 3 2003-03-26 2SK368 RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is
Toshiba
Original
SC-59

2SK3683

Abstract: 2SK368 2SK368 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK368 Audio Frequency and High Voltage Amplifier Applications Constant Current Applications · High breakdown voltage: VGDS = -100 V (min) · High input impedance: IGSS = -1.0 nA (max) (VGS = -80 V) · Unit , O: 0.6~1.4 mA, Y: 1.2~3.0 mA, GR (G): 2.6~6.5 mA Marking 1 2007-11-01 2SK368 2 2007-11-01 2SK368 3 2007-11-01 2SK368 RESTRICTIONS ON PRODUCT USE 20070701-EN GENERAL
Toshiba
Original
Abstract: 2SK368 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK368 Audio Frequency and High Voltage Amplifier Applications Constant Current Applications · · · High breakdown voltage: VGDS = -100 V (min) High input impedance: IGSS = -1.0 nA (max) (VGS = -80 V) Small package Unit: mm , mA Marking 1 2003-03-26 2SK368 2 2003-03-26 2SK368 3 2003-03-26 2SK368 RESTRICTIONS ON PRODUCT USE · The information contained herein is subject to change without Toshiba
Original

S 05L

Abstract: vgds 100v TOSHIBA 2SK368 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2 S K 3 6 8 AUDIO FREQUENCY AND HIGH VOLTAGE AMPLIFIER APPLICATIONS CONSTANT CURRENT APPLICATIONS â'¢ High Breakdown Voltage : vgds = -100V (Min.) â'¢ High Input Impedance : lGSS = -l.OnA (Max.) (VQg=-80V) â , TOSHIBA Semiconductor Reliability Handbook. 1997-04-10 1/3 TOSHIBA 2SK368 id - vds id - vds (low , subject to change without notice. 1997-04-10 2/3 TOSHIBA 2SK368 Ciss - vds igsx - vds
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OCR Scan
S 05L vgds 100v IDSS -6.5mA MARKING 05L
Abstract: T O SH IB A 2SK368 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK368 AUDIO FREQUENCY AND HIGH VOLTAGE AMPLIFIER APPLICATIONS CONSTANT CURRENT APPLICATIONS Unit in mm + 0.5 2 .5 -0 .3 â'¢ â'¢ High Input Impedance â'¢ h0.25 1.5 -0.15 High Breakdown Voltage : VGDg = â'"100V (Min.) Small Package : IGSS = â'"l-0nA(Max.) (VGg = â'"80V) -e - , O SH IB A 2SK368 id - vds id - vds (l o w v o l t a g e r e g io n -
OCR Scan
961001EAA2

2SK3683

Abstract: 2SK368 2SK368 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK368 Audio Frequency and High Voltage Amplifier Applications Constant Current Applications · High breakdown voltage: VGDS = -100 V (min) · High input impedance: IGSS = -1.0 nA (max) (VGS = -80 V) · Unit: mm Small package Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit VGDS , 2003-03-26 2SK368 2 2003-03-26 2SK368 3 2003-03-26 2SK368 RESTRICTIONS ON PRODUCT
Toshiba
Original

2SK368

Abstract: TOSHIBA 2SK368 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2 S K 3 6 8 AUDIO FREQUENCY AND HIGH VOLTAGE AMPLIFIER APPLICATIONS CONSTANT CURRENT APPLICATIONS â'¢ High Breakdown Voltage : VgdS = -100V (Min.) â'¢ High Input Impedance : lGSS = ~ 1-OnA (Max.) (VqS= -80V) â'¢ Small Package , TOSHIBA Semiconductor Reliability Handbook. 1997-04-10 1/3 TOSHIBA 2SK368 id - vds id - vds (low voltage , information contained herein is subject to change without notice. 1997-04-10 2/3 TOSHIBA 2SK368 Ciss - VdS
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OCR Scan

2SK368

Abstract: TOSHIBA 2SK368 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2 S K 3 6 8 AUDIO FREQUENCY AND HIGH VOLTAGE AMPLIFIER APPLICATIONS CONSTANT CURRENT APPLICATIONS â'¢ High , Classification o : 0.6-1.4mA, Y : 1.2~3.0mA, GR(G) : 2.6~6.5mA 1 2001-05-31 TOSHIBA 2SK368 id - vds id - , ) : VDS=10mV VGS = 0 Ta = 25°C 0.3 1 3 10 DRAIN CURRENT IDss (mA) 2 2001-05-31 TOSHIBA 2SK368 , 120 140 AMBIENT TEMPERATURE Ta (°C) 3 2001-05-31 TOSHIBA 2SK368 RESTRICTIONS ON PRODUCT USE
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OCR Scan

2SK368

Abstract: TOSHIBA 2SK368 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2 S K 3 6 8 AUDIO FREQUENCY AND HIGH VOLTAGE AMPLIFIER APPLICATIONS CONSTANT CURRENT APPLICATIONS High Breakdown Voltage : VqdS= -100V (Min.) High Input Impedance : l(jgg= - l.OnA (Max.) (VQg= â'"80V) Small Package , TOSHIBA 2SK368 id - vds id - vds (low voltage region) I I I COMMON SOURCE Ta = 25 , by ICminer.com Electronic-Library Service CopyRight 2003 TOSHIBA 2SK368 Ciss - VdS IGSX - VDS
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OCR Scan

2SK368

Abstract: 2SK368 CONSTANT CURRENT APPLICATIONS. FEATURES: . High B reakdown Voltage . High Input Impedance : lGSS= "l-0nA . Small Package (Max.) SILICON N CHANNEL JUNCTION TYPE A UDIO FREQUENCY AND HIGH VOLTAGE AMPLIFIER APPLICATIONS. +0 .5 2.5-0.3 + CÌ25 1.5-0.1 5 : V gjjs = - 100V (Min.) Unit in mm a (V g s =-80V) £E+I u 2 . OA.TK 3. sount'F . T0-236M0D CHARACTERISTIC Gate Drain Voltage , o c h < < C O (LOW 1 s l i VOLTAGE REQION) 2SK368 - V DS COMMON SOURCE
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OCR Scan

2sk405 2sj115

Abstract: 2SK389 - 46 - M « tt S m a f » t » í 1 K S * t ts s. n m m a na^ic) Pd/Pch (W) Igss (max) (A) (V) * (V) » * (A) » ♦ Vgs (V) (min) (A) (max) (A) Vds (V) / â  \ (min) (V) (max) (V) Vds (V) Id (A) (min) (S) Vds (V) Id (A) 2SK368 mz LF HV A, CC N D -100 GDS 10m G 150m -ln -80 0. 6m 6. 5m 10 -0.4 -3. 5 10 0.1« 1. 5m 4. 6» 10 1DSS 2SK369 ms , DSG 2SK368 75 15 0 10 5 10 100 100k 82C DGS 2SK369 30 6 0 10 1 10 10 lk 2SJ108 70B DGS
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OCR Scan
2SK370 2SK371 2SK372 2SK373 2SK374 2SK380 2sk405 2sj115 2SK389 2SK385 2SK400 2SK375

U8 marking

Abstract: TOSHIBA TOSHIBA FIELD EFFECT TRANSISTOR i < ; \c 2SK368 SILICON N CHANNEL JUNCTION TYPE 3 f i f t AUDIO FREQUENCY AND HIGH VOLTAGE AMPLIFIER APPLICATIONS CONSTANT CURRENT APPLICATIONS Unit in mm + 0.5 2.5 - 0.3 · · · High Breakdown Voltage : V q d S " -100V (Min.) High Input Impedance ; lGSS~ -1.0nA(Max.) (Vqq = -80V) Small Package Sym bol Vg d s IG Pd 1J T stg + 0.25 1. 5 - , TOSHIBA 2SK368 Id - V d s I d - V d s (LOW VOLTAGE REGION) DRAIN-SOURCE VOLTAGE V ßg (V) id
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OCR Scan
U8 marking

2Sj148

Abstract: 2sc3281 TO-92{Mlni) 2SK330 2SK367 2SK365 2SK366 2SK372 SOT-23MOD 2SK208 2SK368 2SK209 USM 2SK879 - P
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OCR Scan
2SC3180N 2SK364 2Sj148 2sc3281 2sc4793 2sd1408 2SC2705 2SC1627A 2SC2235 2SC2236 2SC3423 2SC3419

2sk170 FET

Abstract: fet to92 Part Number 2SK246 Nch 2SJ103 Pch 2SK117 Nch 2SK362 Nch 2SK363 Nch 2SK364 Nch 2SJ104 Pch 2SK30ATM 2SK170 Nch 2SJ74 Pch 2SK369 Nch 2SK373 Nch 2SK330 Nch 2SJ105 Pch 2SK184 Nch 2SK365 Nch 2SK372 Nch 2SK366 Nch 2SJ107 Pch 2SK118 Nch 2SK370 Nch 2SJ108 Pch 2SK371 Nch 2SK367 Nch 2SK208 Nch 2SJ106 Pch 2SK879 Nch 2SJ144 Pch 2SK209 Nch 2SK880 Nch 2SK368 Nch 1 of 1 Polarity -50.0 1.2 50.0 -1.2 -50.0 1.2 -50.0 1.2 -40.0 5.0 -40.0 2.6 -40.0 2.6 Nch -50.0 -40.0
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Original
2sk170 FET fet to92 Junction-FET 2SJ14 fet data book 2SJ-10
Abstract: Current & Analog SW Analog SW & General Purpose 2SK208* 2SK209 2SK368 | | f (MHz) 1 1 1 1 (dB) 5.0 -
OCR Scan
1000M 25MIN 30MIN 20MIN 2SC3119 2SC3120

2SJ111

Abstract: 2SJ109BL JUNCTION FET Item Number Part Number Manufacturer V(BA)GSS loss g. Min (S) Max (V) (A) VGS(Off) Max (V) IGSS Max (A) Cia Max (F) PD Max (Wl Derate at (WrC) Toper Max eC) Package Style N-Channel JFETs, (Cont'd) · 5 2N5392 2N5393 2N5394 2N5395 2N5396 2N4885 2N4886 2N4886 2N5543 2SK223 2N4881 2N4881 2N4883 2N4883 2SK367 2SK368 2SK373 2N4882 2N4884 IT1750 U1715A 2N5277 2N5278 IFN6450 TP6450 TP6450 See Index See Index See Index See Index See Index See Index Hi·Tron Space Power See
Advanced Semiconductor
Original
TP5033 2N5033 2SJ111 2SJ109BL 2SJ109GR 2N3333 2N3112 226AA 238AB 2N3578 SMP3330

2SK241 Equivalent FET

Abstract: 2SK117 equivalent Super-Mini FET (SOT-23MOD, SOT-143MOD) Electrical Characteristics (Ta=25"C) Type No. 2SK208 2SK209 2SK210 2SK211 2SK302 2SK368 2SK1062 ·2SK1771 2SK1826 2SK182S 2SK2033 2SK2036 2SK2009 2SK711 2SJ106 2SJ168 2SJ343 2SJ345 2SJ305 ·3SK126 ·3SK127 '3SK 14 6 `3SK151 ·3SK153 ·3SK160 ·3SK195 ·3SK199 *3SK207 ·3SK225 ·3SK226 ·3SK232 *3SK240 ·3SK250 Application Low-frequency amplification Low-frequency amplification FM RF amplification FM R F amplification VHF band amplification Constant current circuit High-speed switching FM RF
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OCR Scan
TA4000F 2SK241 Equivalent FET 2SK117 equivalent 200 Amp mosfet k 2545 MOSFET 3sk fet 2SK192A equivalent TA4001F TA4002F TA4003F TA4004F TA4006F

2sk4005

Abstract: 2SK385 2SK356 2SK357 2SK358 2SK359 2SK360 2SK362 2SK363 2SK364 2SK365 2SK366 2SK367 2SK368 2SK369
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Original
2SK301 2SK309 2SK314 2SK331 2SK332 2SK336 2sk4005 2SK339 2SK386 2SK303 2SK304 2SK308 2SK310

2N3904 331 transistor

Abstract: C549 transistor * 2SK246 * 2SK266 2SK302 * 2SK330 * 2SK362 * 2SK363 * 2SK364 * 2SK365 * 2SK366 * 2SK367 2SK368 * 2SK369
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OCR Scan
02CZ2 02CZ5 02CZ6 02CZ27 2N3904 331 transistor C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 2N5551 2SC1815 2SK246 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124

2sc 1203

Abstract: 2sa 1300 equivalent Conversion > N Channel TO-92 P Channel USM TO-92 + MINI S-MINI % % 2SK208 2SK368 2SK209 - -
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OCR Scan
2sc 1203 2sa 1300 equivalent 2Sc1923 equivalent 2SK241 equivalent 2SC 1902 2sc1815 equivalent 1815L 2SC2240 2SC1627 2SC752G SC-70 2SC2713
Showing first 20 results.