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Part : 2SK3634-Z-AZ Supplier : NEC Manufacturer : Rochester Electronics Stock : 8,639 Best Price : $0.92 Price Each : $0.92
Part : 2SK363-GR(F) Supplier : Toshiba Manufacturer : Chip1Stop Stock : 1,300 Best Price : $2.88 Price Each : $2.88
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Part : 2SK3634-Z-AZ Supplier : Renesas Electronics Manufacturer : Chip1Stop Stock : 650 Best Price : $5.02 Price Each : $5.02
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2SK363 Datasheet

Part Manufacturer Description PDF Type
2SK363 InterFET N-Channel silicon junction field-effect transistor Original
2SK363 Toshiba Field Effect Transistor Silicon N Channel Junction Type Original
2SK363 N/A FET Data Book Scan
2SK363 Toshiba FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE Scan
2SK363 Toshiba Silicon N channel field effect transistor for audio amplifier, analog switch, constant current and impedance converter applications Scan
2SK363 Toshiba Junction FETs Scan
2SK3633 Toshiba FETs - Nch 700V<VDSS; Surface Mount Type: N; Package: TO-3P(N); Number Of Pins: 3; R DS On (max 1.7); P D (W): (max 7) Original
2SK3633 Toshiba Field Effect Transistor Silicon N Channel MOS Type Original
2SK3633 Toshiba Power MOSFET Selection Guide with Cross Reference Data Original
2SK3634 Kexin N-Channel MOSFET Original
2SK3634 NEC N-ch power MOS FET (switching element) Original
2SK3634 NEC Switching N-Channel Power MOS FET Original
2SK3634-Z NEC SWITCHING N-CHANNEL POWER MOSFET Original
2SK3634-Z NEC Switching N-Channel Power MOS FET Original
2SK3635 Kexin N-Channel MOSFET Original
2SK3635 NEC N-ch power MOS FET (switching element) Original
2SK3635-Z NEC SWITCHING N-CHANNEL POWER MOSFET Original
2SK3636 Kexin N-Channel Power MOSFET Original
2SK3636 Panasonic TRANS MOSFET N-CH 800V 3A 3TO-220D-A1 Original
2SK3636 TY Semiconductor N-Channel Power MOSFET - TO-263 Original
Showing first 20 results.

2SK363

Catalog Datasheet MFG & Type PDF Document Tags

2SK363 transistor

Abstract: 2SK363 2SK363 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK363 For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Applications · Unit: mm High breakdown voltage: VGDS = -40 V · High input impedance: IGSS = -1.0 nA (max) (VGS = -30 V) · Low RDS (ON): RDS (ON) = 20 (typ.) (IDSS = 15 mA) Maximum Ratings (Ta = 25°C) Characteristics , 2SK363 2 2003-03-25 2SK363 3 2003-03-25 2SK363 4 2003-03-25 2SK363
Toshiba
Original
2SK363 transistor SC-43
Abstract: 2SK363 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK363 For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Applications · · · High breakdown voltage: VGDS = -40 V High input impedance: IGSS = -1.0 nA (max) (VGS = -30 V) Low RDS (ON): RDS (ON) = 20 , , V: 14.0~30.0 mA Note 2: Condition of the typical value IDSS = 15 mA 1 2007-11-01 2SK363 2 2007-11-01 2SK363 3 2007-11-01 2SK363 4 2007-11-01 2SK363 RESTRICTIONS Toshiba
Original

TOSHIBA 2SK363

Abstract: 2SK363 TOSHIBA 2SK363 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2 S K 3 6 3 , 2001-05-31 TOSHIBA 2SK363 id - vds id - vds (low voltage region) 12 COMMON SOURCE Ta = 25 , °C 2 2001-05-31 TOSHIBA 2SK363 500 300 100 50 30 Ciss - VDS Crss - vgd COMMON , / 0 4 8 12 16 20 24 28 DRAIN-SOURCE VOLTAGE VDS (V) 3 2001-05-31 TOSHIBA 2SK363 500 400 300 PD , \ \ \ \ \ \ \ \ 25 50 75 100 125 AMBIENT TEMPERATURE Ta (°C) 150 4 2001-05-31 TOSHIBA 2SK363 RESTRICTIONS ON
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OCR Scan
TOSHIBA 2SK363

2SK363 transistor

Abstract: TOSHIBA 2SK363 2SK363 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK363 For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Applications · Unit: mm High breakdown voltage: VGDS = -40 V · High input impedance: IGSS = -1.0 nA (max) (VGS = -30 V) · Low , Note 2: Condition of the typical value IDSS = 15 mA 1 2003-03-25 2SK363 2 2003-03-25 2SK363 3 2003-03-25 2SK363 4 2003-03-25 2SK363 RESTRICTIONS ON PRODUCT USE
Toshiba
Original

2SK363

Abstract: 2SK363 transistor 2SK363 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK363 For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Applications · Unit: mm High breakdown voltage: VGDS = -40 V · High input impedance: IGSS = -1.0 nA (max) (VGS = -30 V) · Low , 1 2007-11-01 2SK363 2 2007-11-01 2SK363 3 2007-11-01 2SK363 4 2007-11-01 2SK363 RESTRICTIONS ON PRODUCT USE 20070701-EN GENERAL · The information contained
Toshiba
Original
Abstract: 2SK363 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK363 For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Applications · · · High breakdown voltage: VGDS = -40 V High input impedance: IGSS = -1.0 nA (max) (VGS = -30 V) Low RDS (ON): RDS (ON) = 20 (typ.) (IDSS = 15 mA) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Gate-drain voltage Gate , 2SK363 2 2003-03-25 2SK363 3 2003-03-25 2SK363 4 2003-03-25 2SK363 Toshiba
Original
Abstract: T O SH IB A 2SK363 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK363 Unit in mm FOR AUDIO AMPLIFIER, ANALOG SWITCH, CONSTANT CURRENT AND IMPEDANCE CONVERTER , O SH IB A 2SK363 id - id v d s < s (l o w v o l t a g e r e g io n , ) DRAIN-SOURCE VOLTAGE o < a o 2SK363 (Jà Crss Uâ'™F) VÃS (V) i O REVERSE TRANSFER CAPACITANCE T O SH IB A 2SK363 R d s (ON) - Ta IGSS - Ta w o 2¡ -
OCR Scan
961001EAA2

2SK363

Abstract: TOSHIBA 2SK363 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2 S K 3 6 3 FOR AUDIO AMPLIFIER, ANALOG SWITCH, CONSTANT CURRENT AND IMPEDANCE CONVERTER APPLICATIONS â'¢ High Breakdown , Reliability Handbook. 1997-04-10 1/4 TOSHIBA 2SK363 id - vds id - vds (low voltage region) 12 COMMON SOURCE Ta , The information contained herein is subject to change without notice. 1997-04-10 2/4 TOSHIBA 2SK363 , 4 8 12 16 20 24 28 DRAIN-SOURCE VOLTAGE VÃS (V) 1997-04-10 3/4 TOSHIBA 2SK363 PD - Ta
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OCR Scan

2SK363

Abstract: TOSHIBA 2SK363 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2 S K 3 6 3 FOR AUDIO AMPLIFIER, ANALOG SWITCH, CONSTANT CURRENT AND IMPEDANCE CONVERTER APPLICATIONS â'¢ High , 2SK363 id - VDS id - Vds (low voltage region) 12 COMMON SOURCE Ta = 25°C Vna- OV , The information contained herein is subject to change without notice. 1997-04-10 2/4 TOSHIBA 2SK363 , 0 4 8 12 16 20 24 28 DRAIN-SOURCE VOLTAGE VDS (V) 1997-04-10 3/4 TOSHIBA 2SK363 500 400 300
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OCR Scan

transistor gds

Abstract: TOSHIBA TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK363 i IMPEDANCE CONVERTER APPLICATIONS prl»nr»p - - r ' : Vq d S = , TOSHIBA 2SK363 ID - V d S ID - V d S (LOW VOLTAGE REGION) DRAIN-SOURCE VOLTAGE V , 2SK363 R d s (ON) - Ta C d o £ IGSS - Ta < H U) k ctí S Z £ ° o o u> z < C Ö
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OCR Scan
transistor gds
Abstract: 9-97 E3 ^ ^ ^ ^ ^ ^ ^ ^^ ^ Jaj> an est^ c|u ivalen ^ F ^ n h £|jes SILICON JUNCTION FIELD-EFFECT TRANSISTORS 2SK113 2SK152 2SK363 2SJ44 Japanese IFN113 IFN152 IFN363 IFP44 InterFET NJ132 NJ132L NJ450 PJ99 N Channel N Channel N Channel P Channel Unit Limit -5 0 -2 0 -4 0 25 V M in 1.0 { - 20 V) 0.1 ( - 1 0 V) 1.0 (â'"30 V) 1.0 (10V) nA Max - 0 .5 /- 2.0 (10V) - 0 .3 /-1 .2 (10 V) - 0 . 2 -
OCR Scan

IFN152

Abstract: 2SJ44 9-97 t ó SILICON JUNCTION FIELD-EFFECT TRANSISTORS 2SK113 2SK152 2SK363 2SJ44 Japanese IFN113 IFN152 IFN363 IFP44 InterFET NJ132 NJ132L NJ450 PJ99 Process N Channel N Channel N Channel P Channel Unit Limit Parameters -50 -20 -40 25 V Min BVqss 1.0 (- 20 V) 0.1 (â'" 10 V) 1.0 (- 30 V) 1.0 (10V) nA Max Igss -0.3/-10 (20 V) - 0.5/- 2.0 (10V) -0.3/-1.2 (10 V) -0.2/- 1.5 e iov) V Min/Max V gs (Off) 5.0/150 (20 V) 5.0/20 (10V) 5.0/30 (10V) 1.0/18 (-10 V) mA Min/Max Idss 20 (20 V) 30 (10V) 60 (10V) 9
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OCR Scan
T0-18

2SJ99

Abstract: 2SK354 . 1« 5m 19» 10 IDSS 2SK363 3S2 LF A. A-S» » D -40 GDS 10» G 400» -ln -30 5» 30» 10 -0.3 , 10 20typ 0 15m 82C DGS 2SK363 30 6 0 10 50typ 0 5m 2SJ104 82C DGS 2SK364 13 3 0 10
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OCR Scan
2SK331 2SK332 2SK333 2SK334 2SK336 2SK337 2SJ99 2SK354 2SK356 2sk3542 2SK347

2sk152 equivalent

Abstract: 2SJ44 _ Japanese Equivalent JFET Types SILICON JUNCTION FIELD-EFFECT TRANSISTORS 2SK113 2SK152 2SK363 2SJ44 Japanese InterFET Process Unit Limit V M in nA M ax V M in /M a x mA M in /M a x mS T yp pF T yp pF T yp IFN113 IFN152 IFN363 IFP44 PJ99 NJ132 NJ132L NJ450 N Channel -5 0 1.0 ( - 20 V) -0 .3 /-1 0 (20 V) 5.0/150 (20 V) 20 (20 V) 10 (0) (20 V) 3.0 (0) (15 V) T O - 18 SDG N Channel -2 0 0.1 (-10 V) -0 .5 /-2 .0 (10V) 5.0/20 (10V) 30 (10V) 15 (0
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OCR Scan
2sk152 equivalent

2sk152 equivalent

Abstract: IFN152 Databook.fxp 1/13/99 2:09 PM Page D-3 D-3 01/99 Japanese Equivalent JFET Types Silicon Junction Field-Effect Transistors Japanese InterFET Process 2SK113 2SK152 2SK363 2SJ44 IFN113 IFN152 IFN363 IFP44 NJ132 NJ132L NJ450 PJ99 N Channel N Channel N Channel P Channel Unit Limit Parameters ­ 50 ­ 20 ­ 40 25 V Min BVGSS 1.0 (­ 20 V) 0.1 (­10 V) 1.0 (­ 30 V) 1.0 (10 V) nA Max IGSS ­ 0.3/­10 (20 V) ­
InterFET
Original
INTERFET 10 V jfet databook JFET TO18

2SJ111

Abstract: 2SJ110 10 300 1.2-14 10 0 19 10 0 3 -10 1 - - - - -
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OCR Scan
2SK30ATM 2SK117 2SK170 2SK246 2SK362 2SK369 2SJ111 2SJ110 2sj111 fet 2SJ103 2SJ74

2SK105 DGS

Abstract: 2SK105 Channel 2SK363 IFN363 NJ450 N Channel 2SJ44 IFP44 PJ99 P Channel Japanese InterFET Process
InterFET
Original
2SK105 2SK105 DGS V6010 2SK17 IFN17 2SK40 IFN40 2SK59 IFN59

2Sj148

Abstract: 2sc3281 ) 0= 0 utpu t Analog Switch/Current Regulator N Channel TO-92 2SK246 2SK373 2SK362 2SK364 2SK363
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OCR Scan
2SC3180N 2SK366 2Sj148 2sc3281 2sc4793 2sd1408 2SC2705 2SC1627A 2SC2235 2SC2236 2SC3423 2SC3419

2sj111

Abstract: 2sj110 *â'" 8 . , N-Channel ! S 1 to * 8 2SK117 ! o i*. Tâ'" XL 8 _i 2SK246 ! 2SK362 ; 2SK363 ; (O n
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OCR Scan
2sk170 FET TOSHIBA 2SK117 TOSHIBA 2SK362 TOSHIBA 2SK369

NJ450

Abstract: D45 TRANSISTOR Databook.fxp 1/13/99 2:09 PM Page F-36 F-36 01/99 NJ450 Process Silicon Junction Field-Effect Transistor ¥ LOW R(on) Switch ¥ Low-Noise, High Gain Amplifier S-D Absolute maximum ratings at TA = 25¡C Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts G 10 mA +150°C ­ 65°C to +175°C Devices in this Databook based on the NJ450 Process. S-D Datasheet G 2SK363 IFN146, IFN147 IFN363 J108, J109 J110, J110A Die Size = 0.028" X 0.028" All
InterFET
Original
D45 TRANSISTOR f36 transistor J108 J110 J109

mg75n2ys40

Abstract: MG15N6ES42 BF469NP 2SC3334 2SK112 2SK117 3SK23 2SK192A BF470NP 2SA1321 2SK113 2SK363 , 2SK147 2SK363 3SK38 BU105 2SK150 2SK389 3SK38A BU108 2SK150A
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Original
1S1658 mg75n2ys40 MG15N6ES42 2sk270a MG150n2ys40 MG8N6ES42 MG15G1AL2 02BZ2 1S2092 1SZ5759 02CZ2 1S2094 2N3055
Showing first 20 results.