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2SK3666-2-TB-E ON Semiconductor N-Channel JFET, 30V, 0.6 to 6.0mA, 6.5mS, CP, SC-59 / CP, 3000-REEL visit Digikey Buy
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2SK3666-3-TB-E ON Semiconductor N-Channel JFET, 30V, 0.6 to 6.0mA, 6.5mS, CP, SC-59 / CP, 3000-REEL visit Digikey Buy
2SK3670(T6CANO,A,F Toshiba America Electronic Components MOSFET N-CH visit Digikey Buy
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2SK3670(T6CANO,F,M Toshiba America Electronic Components MOSFET N-CH visit Digikey Buy

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Part : 2SK3666-2-TB-E Supplier : ON Semiconductor Manufacturer : Farnell element14 Stock : 5,985 Best Price : £0.1170 Price Each : £0.3640
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2SK36 Datasheet

Part Manufacturer Description PDF Type
2SK36 N/A FET Data Book Scan
2SK360 Hitachi Semiconductor Silicon N Channel MOS FET Original
2SK360 Hitachi Semiconductor Silicon N-Channel MOS FET Original
2SK360 Renesas Technology Silicon N-Channel MOS FET Original
2SK360 Renesas Technology Silicon N-Channel MOS FET Original
2SK360 N/A High Frequency Device Data Book (Japanese) Scan
2SK360 N/A FET Data Book Scan
2SK3600-01L Fuji Electric N-CHANNEL SILICON POWER MOSFET Original
2SK3600-01S Fuji Electric N-CHANNEL SILICON POWER MOSFET Original
2SK3600-01SJ Fuji Electric N-CHANNEL SILICON POWER MOSFET Original
2SK3601-01 Fuji Electric N-CHANNEL SILICON POWER MOSFET Original
2SK3601-01 Fuji Electric SMD, Power Amplifier, 100V 20A 50W, MOS-FET N-Channel enhanced Original
2SK3602-01 Fuji Electric N-CHANNEL SILICON POWER MOSFET Original
2SK3603-01MR Fuji Electric N-CHANNEL SILICON POWER MOSFET Original
2SK3604-01L Fuji Electric N-CHANNEL SILICON POWER MOSFET Original
2SK3604-01S Fuji Electric N-CHANNEL SILICON POWER MOSFET Original
2SK3604-01SJ Fuji Electric N-CHANNEL SILICON POWER MOSFET Original
2SK3605-01 Fuji Electric SMD, Power Amplifier, 150V 16A 50W, MOS-FET N-Channel enhanced Original
2SK3605-01 Fuji Electric N-CHANNEL SILICON POWER MOSFET Original
2SK3606-01 Fuji Electric N-CHANNEL SILICON POWER MOSFET Original
Showing first 20 results.

2SK36

Catalog Datasheet MFG & Type PDF Document Tags

2sk77

Abstract: 2sk20 NP IG 1G SANYO:CP 1. Source, 2. Drain, 3. Gate. 2SK242, 2SK¿36. 2SK543. 2SK1840. 1 0.6 - 12
-
OCR Scan
2SK1332 2SK772 2SK444 2sk77 2sk20 2sk427 2sk332 2SK2170C B7--19 2SK1068 2SK1069 2SK1375

sx3704

Abstract: AP239 2SK3673-01MR 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] TO-220F Features High speed switching Low on-resistance No secondary breadown , channel to ambient Min. Typ. Max. 1.563 58.0 Units °C/W °C/W 1 2SK3673-01MR FUJI , -50 -25 0 25 50 75 100 125 150 Tch [°C] 2 2SK3673-01MR 7.0 , 75 100 125 150 starting Tch [°C] 3 2SK3673-01MR Avalanche Current I AV [A
-
OCR Scan
sx3704 AP239 8C547 2N50B 6C131C IN2222A

T35W

Abstract: transistor kt 606A 2SK3676-01L,S,SJ 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features High speed switching Low on-resistance No secondary , . 0.640 75.0 Units °C/W °C/W 1 2SK3676-01L,S,SJ FUJI POWER MOSFET Characteristics , 50 75 100 125 150 Tch [°C] 2 2SK3676-01L,S,SJ 7.0 FUJI POWER MOSFET , 2SK3676-01L,S,SJ 1 10 Maximum Avalanche Current Pulsewidth IAV=f(tAV):starting Tch=25°C,Vcc=90V 2
-
OCR Scan
T35W transistor kt 606A sr 6863 D CS9011 2SC965 AH3505 10DB2P 10DB4P 10DB6P D200MP IRTR-51 991991T1

2SK3673-01MR equivalent

Abstract: 2SK3673-01MR 2SK3679-01MR 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features TO-220F High speed switching Low on-resistance No secondary , /W °C/W 1 2SK3679-01MR FUJI POWER MOSFET Characteristics Allowable Power Dissipation , 50 75 100 125 150 Tch [°C] 2 2SK3679-01MR FUJI POWER MOSFET Gate , Tch [°C] 3 2SK3679-01MR Avalanche Current I AV [A] 10 1 10 Maximum Avalanche
Fuji Electric
Original
2SK3673-01MR equivalent 2SK3673 MOSFET 700V 10A mosfet 350v 10A 700v 10A mosfet MOSFET 700V 4A
Abstract: 2SK3693-01MR 200305 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features TO-220F High speed switching Low on-resistance No secondary , 58.0 Units °C/W °C/W 1 2SK3693-01MR FUJI POWER MOSFET Characteristics 100 , -25 0 25 50 75 100 125 150 Tch [°C] 2 2SK3693-01MR FUJI POWER MOSFET , 0 25 50 75 100 125 150 starting Tch [°C] 3 2SK3693-01MR Avalanche Fuji Electric
Original

2sk3679

Abstract: mosfet 2sk3679 2SK362 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK362 For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Applications · Unit: mm High breakdown voltage: VGDS = -50 V · High input impedance: IGSS = -1.0 nA (max) (VGS = -30 V) · Low , Note 2: Condition of the typical value IDSS = 5 mA 1 2003-03-25 2SK362 2 2003-03-25 2SK362 3 2003-03-25 2SK362 4 2003-03-25 2SK362 RESTRICTIONS ON PRODUCT USE
Fuji Electric
Original
2sk3679 mosfet 2sk3679 2SK3679 equivalent MOSFET 2sk3679 Data sheet 2SK3679-01MR equivalent 2SK3679-01

75V15

Abstract: 2SK366 TOSHIBA Effect Transistor Silicon N Channel Junction Type 2SK366 For Audio Amplifier, Analog-Switch, Constant Current and Impedance Converter Applications · Unit: mm High voltage: VGDS = -40 V · High input impedance: IGSS = -1.0 nA (max) (VGS = -30 V) · Low RDS (ON): RDS (ON) = , : 10~20 mA Note 2: Condition of the typical value IDSS = 5 mA 1 2003-03-26 2SK366 2 2003-03-26 2SK366 3 2003-03-26 2SK366 4 2003-03-26 2SK366 RESTRICTIONS ON PRODUCT
Fuji Electric
Original
75V15

2sk3622

Abstract: 2sk3624 Power MOSFETs 2SK3628 Silicon N-channel power MOSFET Unit: mm 5.0±0.2 15.0±0.3 (0.7) For hihg-speed switching 21.0±0.5 Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Unit Drain-source surrender voltage VDSS 230 VGSS ±30 V ID 20 Peak drain current IDP Power dissipation 80 570 1 2 3 1: Gate 2: Drain 3: Source , SJG00041AED 1 2SK3628 PD Ta Safe operation area 103 120 Non repetitive pulse TC = 25
Toshiba
Original
2sk3622 2sk3624 TOSHIBA 2SK362 SC-43

2SJ107

Abstract: 2SK366 2SK3611-01MR FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings (mm) Features TO-220F High speed switching Low on-resistance No secondary breadown Low , °C/W °C/W 1 2SK3611-01MR FUJI POWER MOSFET Characteristics 30 Maximum Avalanche , 2SK3611-01MR FUJI POWER MOSFET Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=250 µA , 10 1 2 10 ID [A] 3 2SK3611-01MR 10 Zth(ch-c) [°C/W] 10 1 FUJI POWER
Toshiba
Original
2SJ107 Toshiba 2SJ

2SK3628

Abstract: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3659 SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION The 2SK3659 is N-channel MOS FET device that features a PART NUMBER PACKAGE low on-state resistance and excellent switching characteristics, 2SK3659 Isolated TO , © 2002 2SK3659 ELECTRICAL CHARACTERISTICS (TA = 25°C) Characteristics Symbol Test , td(off) tf toff 2SK3659 TYPICAL CHARACTERISTICS (TA = 25°C) DERATING FACTOR OF FORWARD BIAS
Panasonic
Original

tf 216 10a 250v

Abstract: 2SK3611-01MR TENTATIVE 2SK3667 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSVI) 2SK3667 unit Switching Regulator Applications 10±0.3 3.2±0.2 1.1 1.1 Rating Unit Drain-source voltage VDSS 600 V Drain-gate voltage (RGS = 20 k) VDGR 600 V Gate-source , . Please handle with caution. 1 3 2003-04-15 TENTATIVE 2SK3667 Electrical , recovery charge Qrr dIDR/dt = 100 A/µs TBD µC 2 2003-04-15 2SK3667
Fuji Electric
Original
tf 216 10a 250v

2SK3659

Abstract: JUNCTION FET Item Number Part Number Manufacturer V(BR)GSS IDSS g,. Min (S) Max VGS(Off) (V) (A) Max (V) lass Max (A) Clsa Max (F) PD Max (W) Derate at (WrC) Toper Max (OC) Package Style N-Channel JFETs, (Cont'd) 2SK364 2SK366 2SK240 2SK431 2SK170 UC704 2SK194 2SK194 ITE4091 ITE4091A J111A J111A J111A KE4393 KE4393 MPF4091 PMBF4393 PMBF4393 PN'4091 ,SMPJ111A SMPU1897 SMP3972 , NPD5566 2N5564 2N5565 2SK371 2SK363 2SK372 2SK146 2SK147 2SK147V 2SK162 2SK162 BSR56 BSV78 BSV78 BSV78
NEC
Original

2SK3667

Abstract: 2sk3667 transistor equivalent ) 2SK2231(0.16) WW .100Y.C 2SK3627(1.5) WW 00Y.CO .TW .TW WW .100Y.C M.TW P# TPC8303(0.021) W 2SK3563 , .100Y.C M.TW M.T M.T O 2SK3633(1.7) W 2SK3700(2.5) P TPC8105-H(0.04) O W O W 7 WW .100Y.C , .100Y. 2SK3667(1.0) WW .100Y.C M.TW 2SK2417(0.5) WW .100Y.C M.TW 7.5 2SK2917(0.5) O W O WW W , .100Y.C M.TW 2SK3538(0.85) O 8 W O W 2SK3626(0.85) WW .100Y.C WW .100Y.C M.TW 2SK3561(0.85) W , ) TPCA8003-H(0.0066) 2SK3236(0.02) 2SK3662(0.0125) 36 40 2SK2385(0.03) 2SK3089(0.03) N TPCA8004-H
Toshiba
Original
2sk3667 transistor equivalent 2SK3667 equivalent

2N4393 MOTOROLA

Abstract: npd5564 2SK3575 2SK3635 2SK3639 2SK3642 2SK3643 2SK370BL 2SK370GR 2SK370V 2SK381 2SK43 2SK435 2SK508
Advanced Semiconductor
Original
2N4393 MOTOROLA npd5564 2sk162 hitachi hitachi 2sk170 npd5565 FET package TO-71 SMP4091 SMP4393 SOR4091 SOR4393 T0-92 T0-236

2SK1603

Abstract: 2SK3561 equivalent 2SK3598-01 2SK3599-01MR 2SK3600-01S 2SK3603-01MR 2SK3606-01 2SK3607-01MR 2SK3644-01 2SK3646-01S 2SK3648-01 2SK3649-01MR 2SK3650-01S 2SK3673-01MR 2SK3675-01 2SK3677-01MR 2SK3678-01 2SK3679-01MR 2SK3680-01 2SK3681-01 2SK3682-01 2SK3683-01MR 2SK3684-01L 2SK3684-01S 2SK3685-01 2SK3686-01 2SK3687-01MR 2SK3688-01L 2SK3688-01S 2SK3689-01 2SK3778-01 2SK3780-01 2SK3887-01 2SK3888-01MR
Toshiba
Original
2SK1603 2SK3561 equivalent un 1044 2SJ238 2sk1603 datasheet 2SK2030 BCE0017A

STF12A80

Abstract: BSTC1026 MP-3 6 15 8.5 40 25 16 9 2SK3635 8.5 430 8 2SK3638-ZK 5.5 2SK3635-Z 200 19 64 2SK3640-ZK 2SK3639-ZK 21 14 20 9.5 36 2SK3642-ZK 2SK3641-ZK 6 64 2SK3643-ZK 30 MP-45F 32 3-pin SSP 9.9 65 3-pin USM MP , 2SK3642-ZK 21 2SK3641-ZK 5.5 19 2SK3640-ZK 8.5 7 9.4 6.3 15 13 2SK3639-ZK , 2SK3712-Z 2SK4078-ZK 8 6 2SK3635-Z 30 200 2SK3634-Z 64 2SK4090-ZK 2SK4091
Philips Semiconductors
Original
STF12A80 BSTC1026 BSTD1046 BTB04-600SAP STF6A80 BSTD1040 02CZ10 02CZ11 02CZ12 02CZ13 02CZ15 02CZ16

IRF1830G

Abstract: IRF1830 2SK4037 2SK2855 2SK2854 2SK3079A 2SK3756 2SK3078A 2SK3077 2SK3656 Applications PW-X Po (W
STMicroelectronics
Original
IRF1830G IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP70N03S AO4405 AO4407 AO4408 AO4409 AO4410 AO4411

smd code marking NEC

Abstract: TRANSISTOR SMD CODE PACKAGE SOT89 52 10A 2SK2750 2SK3667 2SK2646 / 2SK2647-01 STP7NB80 KHB3D3N90P1/F1 2SK2325 STP/STF3HNK90Z
NEC
Original
smd code marking NEC TRANSISTOR SMD CODE PACKAGE SOT89 52 10A 38w smd transistor smd mark code 38w marking code E1 SMD 5pin SMD 8PIN IC MARKING CODE 251 G18756EU3V0SG00
Showing first 20 results.