2SK3353 2SK3353-S 2SK3353-ZJ 2SK3353-Z D14130EJ2V0DS00 D14130EJ2V0DS MP-25

MOS FIELD EFFECT TRANSISTOR 2SK3353 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION The 2SK3353

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3353 2SK3353 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION The 2SK3353 2SK3353 is N-channel MOS Field Effect Transistor PART NUMBER PACKAGE 2SK3353 2SK3353 TO-220AB designed for high current switching applications. 2SK3353-S 2SK3353-S RDS(on)1 = 9.5 m MAX. (VGS = 10 V, ID = 41 A) 2SK3353-ZJ 2SK3353-ZJ TO-263 5 · Super low on-state resistance: TO-262 5 FEATURES 2SK3353-Z 2SK3353-Z TO-220SMD Note 5 Note TO-220SMD package is produced only in RDS(on)2 = 14 m MAX. (VGS = 4 V, ID = 41 A) Japan · Low Ciss: Ciss = 4650 pF TYP. · Built-in gate protection diode 5 (TO-220AB) 5 (TO-262) 5 (TO-263, TO-220SMD) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS 60 V Gate to Source Voltage (VDS = 0 V) VGSS ±20 V Drain Current (DC) (TC = 25°C) ID(DC) ±82 A ID(pulse) ±328 A Total Power Dissipation (TC = 25°C) PT 95 W Total Power Dissipation (TA = 25°C) PT 1.5 W Channel Temperature Tch 150 °C Drain Current (pulse) Note1 Tstg 55 to +150 °C Single Avalanche Current Note2 IAS 45 A Single Avalanche Energy Note2 EAS 202 mJ Storage Temperature Notes 1. PW 10 µs, Duty cycle 1% 5 2. Starting Tch = 25°C, VDD = 30 V, RG = 25 , VGS = 20 V 0 V The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D14130EJ2V0DS00 D14130EJ2V0DS00 (2nd edition) Date Published November 2000 NS CP(K) Printed in Japan The mark 5 shows major revised points. © 1999 2SK3353 2SK3353 ELECTRICAL CHARACTERISTICS (TA = 25°C) Characteristics Symbol Test Conditions MIN. TYP. MAX. Unit Zero Gate Voltage Drain Current IDSS VDS = 60 V, VGS = 0 V 10 µA Gate Leakage Current IGSS VGS = ±20 V, VDS = 0 V ±10 µA 2.5 V Gate Cut-off Voltage VGS(off) 2.0 VDS = 10 V, ID = 41 A 30 50 RDS(on)1 VGS = 10 V, ID = 41 A 7.5 9.5 m RDS(on)2 Drain to Source On-state Resistance 1.5 | yfs | Forward Transfer Admittance VDS = 10 V, ID = 1 mA VGS = 4 V, ID = 41 A 10.5 14 m S Input Capacitance Ciss VDS = 10 V 4650 pF Output Capacitance Coss VGS = 0 V 780 pF Reverse Transfer Capacitance Crss f = 1 MHz 380 pF Turn-on Delay Time td(on) VDD = 30 V, ID = 41 A 100 ns VGS(on) = 10 V 1550 ns RG = 10 280 ns 420 ns Rise Time tr Turn-off Delay Time td(off) Fall Time tf Total Gate Charge VDD = 48 V 90 nC Gate to Source Charge 5 QG QGS VGS = 10 V 14 nC Gate to Drain Charge QGD ID = 82 A 24 nC VF(S-D) IF = 82 A, VGS = 0 V 1.0 V Reverse Recovery Time trr IF = 82 A, VGS = 0 V 60 ns Reverse Recovery Charge Qrr di/dt = 100 A/µs 110 nC Body Diode Forward Voltage TEST CIRCUIT 1 AVALANCHE CAPABILITY D.U.T. RG = 25 PG. VGS = 20 V 0 V TEST CIRCUIT 2 SWITCHING TIME D.U.T. L 50 VGS RL Wave Form RG PG. VDD VGS 0 VGS(on) 10% 90% VDD ID 90% 90% BVDSS IAS ID VGS 0 ID VDS ID VDD Starting Tch = 1 µs Duty Cycle 1% TEST CIRCUIT 3 GATE CHARGE D.U.T. IG = 2 mA PG. 2 50 0 10% 10% Wave Form RL VDD Data Sheet D14130EJ2V0DS D14130EJ2V0DS td(on) tr ton td(off) tf toff 2SK3353 2SK3353 5 TYPICAL CHARACTERISTICS (TA = 25°C ) TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 140 PT - Total Power Dissipation - W dT - Percentage of Rated Power - % DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 80 60 40 20 0 0 20 40 60 80 100 120 140 120 100 80 60 40 20 0 0 160 20 Tch - Channel Temperature - °C 40 60 80 100 120 140 160 TC - Case Temperature - °C FORWARD BIAS SAFE OPERATING AREA 1000 d ite V) Lim 10 ID(DC) n) = (o S S RD t V G (a 100 10 =1 0µ s 1m s 10 m s Di ss ipa tio n Lim ite d DC TC = 25°C Single Pulse 1 0.1 PW 10 0µ s Po we r 1 10 100 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000 rth(t) - Transient Thermal Resistance - °C/W ID - Drain Current - A ID(pulse) 100 Rth(ch-A) = 83.3°C/W 10 Rth(ch-C) = 1.32°C/W 1 0.1 0.01 10 µ Single Pulse 100 µ 1m 10 m 100 m 1 10 100 1000 PW - Pulse Width - s Data Sheet D14130EJ2V0DS D14130EJ2V0DS 3 2SK3353 2SK3353 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE FORWARD TRANSFER CHARACTERISTICS 300 ID - Drain Current - A ID - Drain Current - A 1000 Pulsed 100 10 TA = -50°C 25°C 75°C 150°C 1 0.1 1 2 3 200 150 100 4.0 V 50 0 VDS = 10 V 6 5 4 VGS =10 V 250 Pulsed 2 1 0 4 3 100 DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE VDS = 10 V Pulsed 10 TA = 150°C 75°C 25°C -50°C 1 0.1 0.1 1 10 100 4 20 Pulsed 10 ID = 41 A 0 5 0 30 20 VGS = 4.0 V 0 0.1 10 V 10 100 20 3 VDS = 10 V ID = 1 mA 2.5 2 1.5 1 0.5 0 1 15 GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE Pulsed 10 10 VGS - Gate to Source Voltage - V DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT VGS(off) - Gate Cut-off Voltage - V RDS(on) - Drain to Source On-state Resistance - m ID - Drain Current - A RDS(on) - Drain to Source On-state Resistance - m FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT | yfs | - Forward Transfer Admittance - S VGS - Gate to Source Voltage - V VDS - Drain to Source Voltage - V 1000 -50 0 50 100 Tch - Channel Temperature - °C ID - Drain Current - A Data Sheet D14130EJ2V0DS D14130EJ2V0DS 150 SOURCE TO DRAIN DIODE FORWARD VOLTAGE DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 1000 Pulsed 20 VGS = 4.0 V 15 10 10 V 5 0 ID = 41 A -50 50 0 100 Pulsed VGS = 10 V 100 VGS = 0 V 10 1 0 150 Tch - Channel Temperature - °C CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE Ciss 1000 Coss Crss 1 100 10 tr 1000 td(off) tf 100 td(on) 10 0.1 100 10 10 100 10 100 VDS - Drain to Source Voltage - V trr - Reverse Recovery Time - ns DYNAMIC INPUT/OUTPUT CHARACTERISTICS di/dt = 100 A/µs VGS = 0 V 1.0 100 ID - Drain Current - A REVERSE RECOVERY TIME vs. DRAIN CURRENT 1 0.1 10 1 VDS - Drain to Source Voltage - V 1000 2.0 1.6 10000 VGS = 0 V f = 1 MHz 10000 100 0.1 1.2 SWITCHING CHARACTERISTICS td(on), tr, td(off), tf - Switching Time - ns Ciss, Coss, Crss - Capacitance - pF 100000 0.8 0.4 VSD - Source to Drain Voltage - V 8 80 VDD = 48 V 30 V 12 V 60 VGS 6 40 4 20 2 0 IF - Drain Current - A 0 20 VDS 40 60 80 ID = 82 A 0 100 120 140 160 VGS - Gate to Source Voltage - V 25 ISD - Diode Forward Current - A RDS(on) - Drain to Source On-state Resistance - m 2SK3353 2SK3353 QG - Gate Charge - nC Data Sheet D14130EJ2V0DS D14130EJ2V0DS 5 2SK3353 2SK3353 SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD SINGLE AVALANCHE ENERGY DERATING FACTOR 160 100 IAS = 45 A EAS =2 02 m J 10 VDD = 30 V RG = 25 VGS = 20 V 0 V 1 10 µ 100 µ 120 100 80 60 40 20 1m 10 m 0 25 50 75 100 125 150 Starting Tch - Starting Channel Temperature - °C L - Inductive Load - H 6 VDD = 30 V RG = 25 VGS = 20 V 0 V IAS 45 A 140 Energy Derating Factor - % IAS - Single Avalanche Current - A 1000 Data Sheet D14130EJ2V0DS D14130EJ2V0DS 2SK3353 2SK3353 PACKAGE DRAWINGS (Unit: mm) 2) TO-262(MP-25 MP-25 Fin Cut) 1.0±0.5 TO-220AB(MP-25 MP-25) 4.8 MAX. 10.6 MAX. (10) 3.6±0.2 1.3±0.2 4.8 MAX. 1.3±0.2 15.5 MAX. 5.9 MIN. 4 1 1 2 3 3 12.7 MIN. 6.0 MAX. 1.3±0.2 1.3±0.2 2.54 TYP. 2.8±0.2 1.Gate 2.Drain 3.Source 4.Fin (Drain) 2.54 TYP. 1.Gate 2.Drain 3.Source 4.Fin (Drain) 3) 5 TO-263 (MP-25ZJ MP-25ZJ) Note 4) TO-220SMD(MP-25Z MP-25Z) 4.8 MAX. (10) 4.8 MAX. (10) 1.3±0.2 1.3±0.2 4 0.7±0.2 (0 .8 R) 1.0±0.3 0.5±0.2 2.54 TYP. 1 1.Gate 2.Drain 3.Source 4.Fin (Drain) 3.0±0.5 8.5±0.2 1.0±0.5 3 2.54 TYP. 2.8±0.2 2 1.4±0.2 ) R 0.5 ( 11±0.4 1.4±0.2 2 ) .5R R) .8 (0 (0 0.5±0.2 3 2.54 TYP. 2.8±0.2 5.7±0.4 8.5±0.2 1.0±0.5 4 2.54 TYP. 1 2.8±0.2 0.5±0.2 0.75±0.3 2.54 TYP. 0.5±0.2 0.75±0.1 2.54 TYP. 2 8.5±0.2 4 10.0 12.7 MIN. 3.0±0.3 1) 1.Gate 2.Drain 3.Source 4.Fin (Drain) Note This Package is produced only in Japan. EQUIVALENT CIRCUIT Drain Remark Body Diode Gate The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. Gate Protection Diode Source Data Sheet D14130EJ2V0DS D14130EJ2V0DS 7 2SK3353 2SK3353 · The information in this document is current as of November, 2000. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. · No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. 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