2SK3325 - Datasheet Archive

 

IC SMD Type MOS Field Effect Transistor 2SK3325 TO-263 + .1 1 .2 7 -00.1 Features Low gate charge: Unit: mm +0.1 1.27-0.1 +0.2

 

Transistors IC SMD Type MOS Field Effect Transistor 2SK3325 2SK3325 TO-263 + .1 1 .2 7 -00.1 Features Low gate charge: Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 Low on-state resistance 0.1max +0.1 1.27-0.1 Avalanche capability ratings +0.1 0.81-0.1 2.54 2.54 +0.2 -0.2 +0.1 5.08-0.1 + .2 2 .5 4 -00.2 + .2 5 .2 8 -00.2 RDS(on) = 0.85 Ù MAX. (VGS = 10 V, ID = 5.0 A) + .2 1 5 .2 5 -00.2 30 V + .2 8 .7 -00.2 Gate voltage rating: 5 .6 0 QG = 22 nC TYP. (VDD = 400 V, VGS = 10 V, ID = 10 A) +0.2 0.4-0.2 1 Gate 2 Drain 3 Source Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain to Source Voltage VDSS 500 V Gate to Source Voltage VGSS 30 V Drain Current(DC) ID(DS) 10 A 40 A Drain Current(pulse) *1 Total Power Dissipation (TA = 25 ) ID(pulse) 1.5 PT W 85 Total Power Dissipation (TC = 25 ) Channel Temperature Tch 150 Storage temperature Tstg -55 to +150 Single Avalanche Current *2 IAS 10 A Single Avalanche Energy *2 EAS 10.7 mJ *1. PW 10ìs,Dduty cycle 1%. *2. Starting Tch = 25 , VDD = 150 V, RG = 25 Ù, VGS = 20 V 0V www.kexin.com.cn 1 Transistors IC SMD Type 2SK3325 2SK3325 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Drain Cut-off Current IDSS Gate Leakage Current IGSS VGS = Min Typ Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance 30 V, VDS = 0 V 2.5 VDS = 10 V, ID = 5.0 A 2.0 RDS(on) VGS = 10 V, ID = 5.0 A 0.68 V S 0.85 Ù pF pF Crss 10 pF td(on) 21 ns tr 11 ns 40 ns Coss Feedback Capacitance Turn-on Delay Time Fall Time 3.5 4.0 nA 190 Ciss Output Capacitance Turn-off Delay Time ìA 1200 Input Capacitance Rise Time Unit 100 VGS(off) VDS = 10 V, ID = 1 mA Yfs Max 100 VDS = 500 V, VGS = 0 V td(off) VDS = 10 V, VGS = 0 V, f = 1 MHz VDD = 150 V, ID = 5.0 A, VGS(on) = 10 V,RG = 10 Ù, RL = 60 Ù tf 9.5 ns Total Gate Charge Qg 22 nC Gate-Source Charge Qgs 6.5 nC 7.5 nC 1.0 V 0.5 ìs 2.6 ìC Gate-Drain Charge Qgd Diode Forward Voltage VF(S-D) Reverse Recovery Time trr Reverse Recovery Charge 2 Qrr www.kexin.com.cn VDD = 400 V, VGS = 10 V, ID = 10 A IF = 10 A, VGS = 0 V IF = 10 A, VGS = 0 V, di/dt = 50 A / ìs