2002/95/EC 2SK3318 SJG00040AED

Power MOSFETs 2SK3318 Silicon N-channel power MOSFET Unit: mm 5.0±0.2 15.0±0.3 (0.7) For switching 3.2±0.1

This product complies with the RoHS Directive (EU 2002/95/EC 2002/95/EC). Power MOSFETs 2SK3318 2SK3318 Silicon N-channel power MOSFET Unit: mm 5.0±0.2 15.0±0.3 (0.7) For switching 3.2±0.1 Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Unit Drain-source surrender voltage VDSS 600 VGSS ±30 V ID ±15 2.0±0.2 A Drain current IDP ±60 112.5 100 W 5.45±0.3 1 2 3 1: Gate 2: Drain 3: Source TOP-3F-A1 Package mJ PD Power dissipation 0.6±0.2 10.9±0.5 A EAS Peak drain current Avalanche energy capability * 2.0±0.1 1.1±0.1 V Gate-source surrender voltage (3.5) Solder Dip 16.2±0.5 ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo ol t n l ht low disc dis ena ten low tp in o co n an in :// g nt n ce c g pa U in tin t e fo na RL ue ue ype typ ur so a d t d e Pr od ty ni bo yp p c. u e e uc ne t l d tl ife t/s ate cy c/ st en in cl e fo st rm ag at e. io n. · Avalanche energy capability guaranteed · High-speed switching · Low ON resistance Ron · No secondary breakdown 15.0±0.2 21.0±0.5 M Di ain sc te on na tin nc ue e/ d Features (3.2) 11.0±0.2 Ta = 25°C Internal Connection 3 Channel temperature Tch 150 °C Storage temperature Tstg -55 to +150 °C D Note) *: L = 1 mH, IL = 15 A, 1 pulse G Electrical Characteristics TC = 25°C ± 3°C Parameter Symbol Conditions VDSS Diode forward voltage is Gate-source cutoff currentt co Drain-source cutoff current /D Drain-source on resistance ce Forward transfer admittance Vth VDS = 25 V, ID = 1 mA IDSS IGSS VGS = ±30 V, VDS = 0 RDS(on) VGS = 10 V, ID = 7.5 A Yfs Fall time V 2 0.33 4 V 10 µA ±1 µA 0.46 S Coss 340 pF Crss 50 pF 40 ns td(on) VDD = 150 V, ID = 7.5 A tr RL = 20 , VGS = 10 V 6 V pF VDS = 20 V, VGS = 0, f = 1 MHz Pl ea M ai nt en an Turn-off delay time -1.5 10 Short-circuit output capacitance (Common-source) Rise time Unit 3 500 Ciss Turn-on delay time VDS = 25 V, ID = 7.5 A Max 600 VDS = 480 V, VGS = 0 Short-circuit forward transfer capacitance (Common-source) Reverse transfer capacitance (Common-source) Typ IDR = 15 A, VGS = 0 nt in Gate threshold voltage ID = 1 mA, VGS = 0 VDSF Gate-drain surrender voltage Min S 55 ns td(off) 310 ns tf 70 ns Channel-case heat resistance Rth(ch-c) 1.25 °C/W Channel-atmosphere heat resistance Rth(ch-a) 41.7 °C/W Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. Publication date: November 2004 SJG00040AED SJG00040AED 1 This product complies with the RoHS Directive (EU 2002/95/EC 2002/95/EC). 2SK3318 2SK3318 PD Ta Safe operation area 103 120 Non repetitive pulse TC = 25°C Power dissipation PD (W) Drain current ID (A) 100 102 I DP t = 100 µs ID 10 RDS(on) Limited 1 ms 1 10 ms (1) TC = Ta (2) Without heat sink PD = 3 W (1) 80 60 40 20 100 ms DC (2) 10-1 1 10 102 Drain-source voltage VDS (V) 2 103 0 0 50 100 Ambient temperature Ta (°C) SJG00040AED SJG00040AED 150 Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2) The technical information described in this book is intended only to show the main characteristics and application circuit examples of the products, and no license is granted under any intellectual property right or other right owned by our company or any other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other company which may arise as a result of the use of technical information described in this book. (3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. Any applications other than the standard applications intended. (4) The products and product specifications described in this book are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions (operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. 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