2SK3310 SC-67 2-10R1B K3310 030619EAA

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK3310 Switching Regulator Applications Unit: mm · Low

2SK3310 2SK3310 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK3310 2SK3310 Switching Regulator Applications Unit: mm · Low drain-source ON resistance: RDS (ON) = 0.48 (typ.) · High forward transfer admittance: |Yfs| = 4.3 S (typ.) · Low leakage current: IDSS = 100 µA (max) (VDS = 450 V) · Enhancement model: Vth = 3.0~5.0 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 450 V Drain-gate voltage (RGS = 20 k) VDGR 450 V Gate-source voltage VGSS ±30 V DC (Note 1) ID 10 Pulse (Note 1) IDP 40 Drain power dissipation (Tc = 25°C) PD 40 W Single pulse avalanche energy (Note 2) EAR 222 mJ Avalanche current IAR 10 A Repetitive avalanche energy (Note 3) EAR 4 mJ Channel temperature Tch 150 °C Storage temperature range Tstg -55~150 °C Drain current A JEDEC JEITA TOSHIBA SC-67 SC-67 2-10R1B 2-10R1B Weight: 1.9 g (typ.) Thermal Characteristics Characteristics Symbol Max Unit Thermal resistance, channel to case Rth (ch-c) 3.125 °C/W Thermal resistance, channel to ambient Rth (ch-a) 62.5 °C/W Note 1: Ensure that the channel temperature does not exceed 150°C. Note 2: VDD = 90 V, Tch = 25°C (initial), L = 3.7 mH, RG = 25 , IAR = 10 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Please handle with caution. 1 2004-07-06 2SK3310 2SK3310 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Typ. Max Unit VGS = ±25 V, VDS = 0 V ±10 µA V (BR) GSS IG = ±10 µA, VDS = 0 V ±30 V 100 µA V (BR) DSS ID = 10 mA, VGS = 0 V 450 V Vth VDS = 10 V, ID = 1 mA 3.0 5.0 V Drain cut-off current VDS = 450 V, VGS = 0 V IDSS Drain-source breakdown voltage Min IGSS Gate leakage current Gate -source breakdown voltage Test Condition Gate threshold voltage Drain-source ON resistance RDS (ON) VGS = 10 V, ID = 5 A 0.48 0.65 Forward transfer admittance Yfs VDS = 10 V, ID = 5 A 1.5 4.3 S Input capacitance Ciss 920 VDS = 25 V, VGS = 0 V, f = 1 MHz Reverse transfer capacitance Rise time tr ton Switching time Fall time 35 ns 60 23 9 VDD 360 V, VGS = 10 V, ID = 10 A - Qgs Gate-drain charge 14 VDD 200 V - Qg Gate-source charge 10 Duty < 1%, tw = 10 µs = toff Total gate charge 25 pF VOUT tf Turn-off time RL = 40 10 Turn-on time ID = 5 A 10 V VGS 0V 12 140 Coss Crss Output capacitance Qgd nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Continuous drain reverse current (Note 1) IDR 10 A 40 A Forward voltage (diode) VDSF IDR = 10 A, VGS = 0 V -1.7 V Reverse recovery time trr IDR = 10 A, VGS = 0 V, 280 ns Qrr dIDR/dt = 100 A/µs 2.7 µC Pulse drain reverse current Reverse recovery charge (Note 1) IDRP Marking K3310 K3310 Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2004-07-06 2SK3310 2SK3310 ID VDS 10 ID VDS 20 10 15 8.5 9 (A) ID 6 7.5 4 7 8.5 12 Drain current ID Drain current Common source Tc = 25°C Pulse test 10 16 8 (A) 8 15 Common source Tc = 25°C Pulse test 8 8 7.5 7 4 2 VGS = 6 V 0 0 2 4 6 Drain-source voltage 8 VGS = 6 V 0 0 10 VDS (V) 10 20 VDS (V) 10 Common source Tc = 25°C Pulse test 8 8 Drain-source voltage ID Drain current VDS (A) (V) Common source VDS = 20 V Pulse test 12 25 4 0 0 Tc = -55°C 100 2 4 6 8 Gate-source voltage VGS 10 Drain-source on resistance RDS (ON) () 25 0.3 1 3 Drain current 4 8 12 16 VGS 20 (V) RDS (ON) ID 100 0.3 2.5 Gate-source voltage 1 0.1 0.1 5 2 5 Tc = -55°C 3 ID = 10 A 4 (V) 30 Common source VDS = 20 V 10 Pulse test 6 0 0 12 Yfs ID (S) 50 VDS VGS ID VGS Forward transfer admittance Yfs 40 Drain-source voltage 20 16 30 10 30 Common source Tc = 25°C Pulse test 1 VGS = 10, 15 V 0.1 1 100 ID (A) 10 Drain current 3 100 ID (A) 2004-07-06 2SK3310 2SK3310 RDS (ON) Tc IDR VDS 100 1.6 Common source VGS = 10 V Pulse test Drain reverse current IDR (A) Drain-source on resistance RDS (ON) () 2.0 5 1.2 ID = 10 A 2.5 0.8 0.4 Common source Tc = 25°C Pulse test 10 1 10 5 0.1 1 3 0 -80 -40 0 40 80 Case temperature Tc 120 0.01 0 160 (°C) VGS = 0, -1 V -0.4 -0.2 Capacitance VDS Vth (V) Ciss 100 Gate threshold voltage (pF) C VDS (V) Vth Tc 300 Capacitance -1.2 -1 6 1000 Coss Common source VGS = 0 V 10 -0.8 Drain-source voltage 3000 30 -0.6 f = 1 MHz Crss Common source VDS = 10 V ID = 1 mA Pulse test 5 4 3 2 1 Tc = 25°C 3 0.1 0.3 1 3 10 Drain-source voltage 30 100 0 -80 300 VDS (V) -40 0 40 Case temperature PD Tc 80 Tc 120 160 (°C) Dynamic input/output characteristics 50 500 20 20 10 0 0 40 80 Case temperature 120 Tc 160 (°C) 180 8 VGS 4 100 0 0 200 12 360 10 20 30 40 VGS (V) VDS 300 200 16 Pulse test VDD = 90 V VDS Drain-source voltage Drain power dissipation 30 ID = 10 A Tc = 25°C 400 Gate-source voltage (V) 40 PD (W) Common source 0 50 Total gate charge Qg (nC) 4 2004-07-06 2SK3310 2SK3310 rth tw 10 5 Normalized transient thermal impedance rth (t)/Rth (ch-c) 3 1 Duty = 0.5 0.5 0.3 0.2 0.1 0.1 0.05 0.03 0.05 0.02 Single pulse PDM 0.01 0.01 t 0.005 T 0.003 0.001 10 µ Duty = t/T Rth (ch-c) = 3.125°C/W 100 µ 1m 10 m Pulse width 100 m tw 1 10 (S) EAS Tch Safe operating area 400 100 (mJ) ID max (pulse) * ID max (continuous) Avalanche energy (A) 10 Drain current ID 1 ms * 1 300 EAS 100 µs * DC operation Tc = 25°C 200 100 0 25 0.1 50 75 100 125 Channel temperature (initial) * Single nonrepetitive pulse Tch 150 (°C) Tc = 25°C Curves must be derated linearly with increase in 0.01 1 VDSS max 15 V temperature. 10 Drain-source voltage 100 1000 BVDSS IAR -15 V VDS (V) VDD Test circuit RG = 25 VDD = 90 V, L = 3.7 mH 5 VDS Wave form AS = 1 B VDSS L I2 B 2 - VDD VDSS 2004-07-06 2SK3310 2SK3310 RESTRICTIONS ON PRODUCT USE 030619EAA 030619EAA · The information contained herein is subject to change without notice. · The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. · TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc. · The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. · TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 6 2004-07-06