2SK3274 REJ03G1098-0300 PRSS0004ZD-B PRSS0004ZD-C SC-63 2SK3274L-E 2SK3274STL-E - Datasheet Archive

 

Silicon N Channel MOS FET High Speed Power Switching REJ03G1098-0300 Rev.3.00 May 15, 2006 Features · · ·

 

2SK3274 2SK3274 (L), 2SK3274 2SK3274 (S) Silicon N Channel MOS FET High Speed Power Switching REJ03G1098-0300 REJ03G1098-0300 Rev.3.00 May 15, 2006 Features · · · · Low on-resistance RDS (on) = 10 m typ. 4.5 V gate drive device High speed switching Outline RENESAS Package code: PRSS0004ZD-B PRSS0004ZD-B (Package name: DPAK (L)-(2) ) RENESAS Package code: PRSS0004ZD-C PRSS0004ZD-C (Package name: DPAK (S) ) 4 D 2 4 1. Gate 2. Drain 3. Source 4. Drain 1 G 1 1 2 3 3 S 2 3 Rev.3.00 May 15, 2006 page 1 of 8 2SK3274 2SK3274 (L), 2SK3274 2SK3274 (S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID ID (pulse) Note 1 IDR IAP Note 3 EAR Note 3 Pch Note 2 Tch Tstg Value 30 ±20 30 120 30 20 40 30 150 ­55 to +150 Unit V V A A A A mJ W °C °C Notes: 1. PW 10 µs, duty cycle 1% 2. Value at Tc = 25°C 3. Value at Tch = 25°C, Rg 50 Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Forward transfer admittance Static drain to source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time Note: 4. Pulse test Rev.3.00 May 15, 2006 page 2 of 8 Symbol V (BR) DSS IGSS IDSS VGS (off) |yfs| RDS (on) RDS (on) Ciss Coss Crss Qg Qgs Qgd td (on) tr td (off) tf VDF trr Min 30 - - 1.5 18 - - - - - - - - - - - - - - Typ - - - - 30 10 20 1500 500 250 27 6 5 22 170 110 145 1.0 35 Max - ±0.1 10 3.0 - 13 30 - - - - - - - - - - - - Unit V µA µA V S m m pF pF pF nC nC nC ns ns ns ns V ns Test Conditions ID = 10 mA, VGS = 0 VGS = ±20 V, VDS = 0 VDS = 30 V, VGS = 0 VDS = 10 V, ID = 1 mA Note 4 ID = 15 A, VDS = 10 V Note 4 ID = 15 A, VGS = 10 V Note 4 ID = 15 A, VGS = 4.5 V Note 4 VDS = 10 V VGS = 0 f = 1 MHz VDD = 10 V VGS = 10 V ID = 30 A VGS = 10 V ID = 15 A RL = 2 IF = 30 A, VGS = 0 IF = 30 A, VGS = 0 diF/dt = 50 A/µs 2SK3274 2SK3274 (L), 2SK3274 2SK3274 (S) Main Characteristics Maximum Safe Operation Area 200 40 10 ID (A) 100 30 Drain Current Channel Dissipation Pch (W) Power vs. Temperature Derating 20 10 10 PW 50 =1 1m 0m s s( Op 1s era ho t) tio n( Tc =2 5° C) DC 20 10 5 2 0µ µs s Operation in this area is limited by RDS(on) 1 0.5 Ta = 25°C 0.2 0 0 50 100 150 Case Temperature 1 200 Tc (°C) 5 10 20 Pulse Test VDS = 10 V Pulse Test ID (A) ID (A) 4.5 V 5V 30 40 30 Drain Current Drain Current VDS (V) Typical Transfer Characteristics 6V 4V 20 10 VGS = 3.5 V 20 0 0 2 4 6 Drain to Source Voltage 8 10 Pulse Test 0.8 0.6 0.4 ID = 20 A 10 A 5A 0 4 8 12 Gate to Source Voltage Rev.3.00 May 15, 2006 page 3 of 8 16 20 VGS (V) 2 4 6 8 Gate to Source Voltage 10 VGS (V) Static Drain to Source on State Resistance vs. Drain Current Drain to Source on State Resistance RDS(on) () 1.0 0 0 VDS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage 0.2 25°C Tc = 75°C 10 ­25°C 0 Drain to Source Saturation Voltage VDS(on) (V) 100 50 10 V 40 50 Drain to Source Voltage Typical Output Characteristics 50 2 0.05 VGS = 4.5 V 0.02 0.01 10 V 0.005 0.002 Pulse Test 0.001 0.1 0.2 0.5 1 2 Drain Current 5 10 20 ID (A) 50 Forward Transfer Admittance vs. Drain Current Static Drain to Source on State Resistance vs. Temperature 0.10 Forward Transfer Admittance |yfs| (S) Static Drain to Source on State Resistance RDS(on) () 2SK3274 2SK3274 (L), 2SK3274 2SK3274 (S) Pulse Test 0.08 0.06 ID = 5 A, 10 A, 20 A 0.04 VGS = 4.5 V 0.02 10 V 0 ­40 0 5 A, 10 A, 20 A 40 80 120 Case Temperature 160 50 20 Tc = ­25°C 25°C 10 5 75°C 2 1 0.5 0.1 2000 200 100 50 20 ID (A) 500 Coss 200 Crss 100 50 VGS = 0 f = 1 MHz 10 0.3 1 3 10 30 100 0 VDD = 20 V 10 V 5V 30 12 VDS 8 VGS 10 4 VDD = 20 V 10 V 5V 0 8 16 Gate Charge Rev.3.00 May 15, 2006 page 4 of 8 24 32 Qg (nC) 30 40 50 VDS (V) 40 1000 Switching Time t (ns) 16 VGS (V) ID = 30 A 40 20 Switching Characteristics 20 50 10 Drain to Source Voltage IDR (A) Gate to Source Voltage VDS (V) Drain to Source Voltage 100 1000 Dynamic Input Characteristics 0 0 30 Ciss 20 Reverse Drain Current 20 10 5000 di / dt = 50 A / µs VGS = 0, Ta = 25°C 10 0.1 3 Typical Capacitance vs. Drain to Source Voltage Capacitance C (pF) Reverse Recovery Time trr (ns) 500 1 0.3 Drain Current Tc (°C) Body-Drain Diode Reverse Recovery Time 1000 VDS = 10 V Pulse Test 300 td(off) 100 tf 30 tr td(on) 10 3 1 0.1 VGS = 10 V, VDD = 30 V PW = 5 µs, duty 1 % 0.3 1 3 Drain Current 10 30 ID (A) 100 2SK3274 2SK3274 (L), 2SK3274 2SK3274 (S) Reverse Drain Current vs. Source to Drain Voltage Repetitive Avalanche Energy EAR (mJ) Maximum Avalanche Energy vs. Channel Temperature Derating Reverse Drain Current IF (A) 50 40 10 V 5V 30 20 VGS = 0, ­5 V 10 Pulse Test 0 0 0.4 0.8 1.2 1.6 Source to Drain Voltage 2.0 40 IAP = 20 A VDD = 15 V duty < 0.1 % Rg 50 32 24 16 8 0 25 50 75 100 125 150 Channel Temperature Tch (°C) VSDF (V) Normalized Transient Thermal Impedance s (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 Tc = 25°C D=1 1 0.5 0.3 0.2 0.1 0.1 ch ­ c (t) = s (t) · ch ­ c ch ­ c = 4.17°C/W, Tc = 25°C 0.05 0.02 0.03 D= PDM 1 e 0.0 puls t ho 1s 0.01 10 µ PW T PW T 100 µ 1m 10 m 100 m 1 10 Pulse Width PW (S) Avalanche Test Circuit VDS Monitor Avalanche Waveform L EAR = 1 · L · IAP2 · 2 VDSS VDSS ­ VDD IAP Monitor Rg V(BR)DSS IAP D.U.T VDD VDS ID Vin 15 V 50 0 Rev.3.00 May 15, 2006 page 5 of 8 VDD 2SK3274 2SK3274 (L), 2SK3274 2SK3274 (S) Switching Time Test Circuit Waveform 90% Vout Monitor Vin Monitor D.U.T. Vin 10% RL Vout Vin 10 V 50 VDD = 30 V 10% 90% td(on) Rev.3.00 May 15, 2006 page 6 of 8 10% tr 90% td(off) tf 2SK3274 2SK3274 (L), 2SK3274 2SK3274 (S) Package Dimensions JEITA Package Code RENESAS Code PRSS0004ZD-B PRSS0004ZD-B Previous Code MASS[Typ.] 0.42g DPAK(L)-(2) / DPAK(L)-(2)V 1.7 ± 0.5 Package Name DPAK(L)-(2) 2.3 ± 0.2 0.55 ± 0.1 1.2 ± 0.3 16.2 ± 0.5 3.1 ± 0.5 1.15 ± 0.1 0.8 ± 0.1 (0.7) 4.7 ± 0.5 5.5 ± 0.5 6.5 ± 0.5 5.4 ± 0.5 Unit: mm 0.55 ± 0.1 0.55 ± 0.1 2.29 ± 0.5 JEITA Package Code SC-63 SC-63 RENESAS Code PRSS0004ZD-C PRSS0004ZD-C Previous Code DPAK(S) / DPAK(S)V 6.5 ± 0.5 5.4 ± 0.5 (0.1) MASS[Typ.] 0.28g 2.3 ± 0.2 0.55 ± 0.1 0 ­ 0.25 2.5 ± 0.5 (1.2) 1.0 Max. 2.29 ± 0.5 Rev.3.00 May 15, 2006 page 7 of 8 Unit: mm (5.1) (5.1) (0.1) 1.2 Max 5.5 ± 0.5 1.5 ± 0.5 Package Name DPAK(S) 2.29 ± 0.5 0.8 ± 0.1 2.29 ± 0.5 0.55 ± 0.1 2SK3274 2SK3274 (L), 2SK3274 2SK3274 (S) Ordering Information Part Name 2SK3274L-E 2SK3274L-E 2SK3274STL-E 2SK3274STL-E Quantity 3200 pcs 3000 pcs Shipping Container Box (Sack) Taping Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.3.00 May 15, 2006 page 8 of 8 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein. http://www.renesas.com RENESAS SALES OFFICES Refer to "http://www.renesas.com/en/network" for the latest and detailed information. Renesas Technology America, Inc. 450 Holger Way, San Jose, CA 95134-1368, U.S.A Tel: (408) 382-7500, Fax: (408) 382-7501 Renesas Technology Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K. Tel: (1628) 585-100, Fax: (1628) 585-900 Renesas Technology (Shanghai) Co., Ltd. Unit 204, 205, AZIACenter, No.1233 Lujiazui Ring Rd, Pudong District, Shanghai, China 200120 Tel: (21) 5877-1818, Fax: (21) 6887-7898 Renesas Technology Hong Kong Ltd. 7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong Tel: 2265-6688, Fax: 2730-6071 Renesas Technology Taiwan Co., Ltd. 10th Floor, No.99, Fushing North Road, Taipei, Taiwan Tel: (2) 2715-2888, Fax: (2) 2713-2999 Renesas Technology Singapore Pte. Ltd. 1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632 Tel: 6213-0200, Fax: 6278-8001 Renesas Technology Korea Co., Ltd. Kukje Center Bldg. 18th Fl., 191, 2-ka, Hangang-ro, Yongsan-ku, Seoul 140-702, Korea Tel: (2) 796-3115, Fax: (2) 796-2145 Renesas Technology Malaysia Sdn. Bhd Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No.18, Jalan Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia Tel: 7955-9390, Fax: 7955-9510 © 2006. Renesas Technology Corp., All rights reserved. Printed in Japan. Colophon .6.0