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Part : 2SK3162-E Supplier : Renesas Electronics Manufacturer : Chip1Stop Stock : 95 Best Price : $5.01 Price Each : $5.01
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2SK3162 Datasheet

Part Manufacturer Description PDF Type
2SK3162 Hitachi Semiconductor Silicon N Channel MOS FET High Speed Power Switching Original
2SK3162 Renesas Technology Silicon N Channel MOS FET High Speed Power Switching Original
2SK3162 Renesas Technology Silicon N Channel MOS FET High Speed Power Switching Original
2SK3162-E Renesas Technology Silicon N Channel MOS FET High Speed Power Switching Original

2SK3162

Catalog Datasheet MFG & Type PDF Document Tags

Hitachi DSA002779

Abstract: 2SK3162 Silicon N Channel MOS FET High Speed Power Switching ADE-208-735B (Z) 3rd. Edition , 3 2SK3162 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source , ) tf VDF trr Gate to source breakdown voltage V(BR)GSS ±20 2 2SK3162 Main Characteristics , V 4 (V) GS 5 3 2SK3162 Drain to Source Saturation Voltage vs. Gate to Source Voltage Drain , Transfer Admittance |y 2SK3162 Body­Drain Diode Reverse Recovery Time 1000 Reverse Recovery Time trr
Hitachi Semiconductor
Original
Hitachi DSA002779 220FM D-85622
Abstract: on these materials or the products contained therein. 2SK3162 Silicon N Channel MOS FET High , ­220FM D G 1 2 S 1. Gate 2. Drain 3. Source 3 2SK3162 Absolute Maximum Ratings (Ta = 25 , , duty cycle 1 % 2. Value at Tc = 25°C 3. Value at Tch = 25°C, Rg 50 2SK3162 Electrical , VDF t rr 2SK3162 Main Characteristics Power vs. Temperature Derating 40 100 Maximum Safe , Voltage 4 5 V GS (V) 2SK3162 Drain to Source Saturation Voltage vs. Gate to Source Voltage Static Hitachi Semiconductor
Original

c2075

Abstract: Hitachi DSA00307 2SK3162 Silicon N Channel MOS FET High Speed Power Switching ADE-208-735B (Z) 3rd. Edition , . Source 3 2SK3162 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain , = 20 A, VGS = 0 diF/ dt = 50 A/ µs Note: 2 4. Pulse test 2SK3162 Main Characteristics , ) 3 2SK3162 2.0 1.5 1.0 Static Drain to Source on State Resistance R DS(on) (m ) I , 0.5 0.1 V DS = 10 V Pulse Test 0.3 1 3 10 30 Drain Current I D (A) 100 2SK3162
Hitachi Semiconductor
Original
c2075 Hitachi DSA00307
Abstract: Information Part Name 2SK3162-E Quantity 500 pcs Shipping Container Box (Sack) Note: For some , developed or manufactured by or for Renesas Electronics. 2SK3162 Silicon N Channel MOS FET High Speed , .4.00 Sep 07, 2005 page 1 of 7 2 3 1. Gate 2. Drain 3. Source S 2SK3162 Absolute Maximum , / dt = 50 A/ µs 2SK3162 Main Characteristics Maximum Safe Operation Area Power vs , Transfer Admittance yfs (S) Static Drain to Source on State Resistance RDS (on) (mâ"¦) 2SK3162 Renesas Technology
Original

Hitachi DSA0076

Abstract: 2SK3162 2SK3162 Silicon N Channel MOS FET High Speed Power Switching ADE-208-735B (Z) 3rd. Edition , . Source 3 2SK3162 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain , 1 % 2. Value at Tc = 25°C 3. Value at Tch = 25°C, Rg 50 2SK3162 Electrical Characteristics , , VGS = 0 diF/ dt =50A/µs Note: 4. Pulse test 3 2SK3162 Main Characteristics Power vs , Voltage 8 V DS (V) 10 0 1 2 3 Gate to Source Voltage 4 5 V GS (V) 2SK3162 2.0
Hitachi Semiconductor
Original
Hitachi DSA0076

H7N1009MD

Abstract: fuel injector mosfet 2SK3162 H7N1004DS 2SJ530 2SJ534 H7P0601DS Major Characteristics N P N N N VDSS (V) 60 , 34 35/76 45/76 27 54 160 180 H7N0607DS H7P0601DS 2SK3155 2SK3162 H7N1004DS Ch
Renesas Electronics
Original
RJM0602JSC RJM0603JSC RJM0305JSP HAT3018RJ RJM0301JSP H7N1009MD fuel injector mosfet HSOP20 solenoid injector injector HAF1004 HAT1097RJ HAT2114RJ

2SK3162

Abstract: 2SK3162-E 2.54 ± 0.5 2.54 ± 0.5 0.5 ± 0.1 Ordering Information Part Name 2SK3162-E Quantity 500 , . 2SK3162 Silicon N Channel MOS FET High Speed Power Switching REJ03G1087-0400 (Previous: ADE , . Source S 2SK3162 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to , IF = 20A, VGS = 0 IF = 20A, VGS = 0 diF/ dt = 50 A/ µs 2SK3162 Main Characteristics Maximum , RDS (on) (m) 2SK3162 250 Pulse Test 200 150 5,10,15 A VGS = 4 V 100 5,10,15 A
Renesas Technology
Original
PRSS0003AD-A

2SK3162-E

Abstract: 2SK3162 2.54 ± 0.5 2.54 ± 0.5 0.5 ± 0.1 Ordering Information Part Name 2SK3162-E Quantity 500 , 2SK3162 Silicon N Channel MOS FET High Speed Power Switching REJ03G1087-0400 (Previous: ADE , . Source S 2SK3162 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to , IF = 20A, VGS = 0 IF = 20A, VGS = 0 diF/ dt = 50 A/ µs 2SK3162 Main Characteristics Maximum , RDS (on) (m) 2SK3162 250 Pulse Test 200 150 5,10,15 A VGS = 4 V 100 5,10,15 A
Renesas Technology
Original
ADE-208-735C

2sk3148

Abstract: 2sk3155 2SK3156 2SK3158 TO-220 FM TO-3P LDPAK TO-220 FM 2SK3155 2SK3157 2SK3159 2SK3161 2SK3160 2SK3162 ! ! O
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OCR Scan
2sk3148 Fuel injection 2SK3147 2SK3150 2SK3149 2SK3148 2SK3151 2SK3152

7054F

Abstract: BC564A 2sk3160 2sk3161ls 2sk3162 2sk3163 2sk3177 2sk3203ls 2sk3207 2sk3209 2sk3210ls 2sk3211ls 2sk3212
Hitachi Semiconductor
Original
7054F BC564A HA13563 AC123A HITACHI microcontroller H8 534 manual AC538 2SD755/56/56A

lvc16244

Abstract: BC240 2SK3159 2SK3160 2SK3161L 2SK3162 2SK3163 2SK3177 2SK3203L 2SK3207 2SK3209 2SK3210L 2SK3211L 2SK3212
Hitachi Semiconductor
Original
HA13557A lvc16244 BC240 CBT1G125 2sk3174 LV2GT14A HAT2080R HAT2080T HAT2085R HAT2085T HAT2087R HAT2088R

TO220CFM

Abstract: TO220FM 2SK3148 2SK3152 2SK3153 2SK3155 2SK3157 2SK3160 2SK3162 2SK3177 2SK3207 2SK3209 2SK3212 H5N5001FM
Hitachi Semiconductor
Original
HAT1053M TO220CFM TO220FM 2SK1835 2SK2096 Hitachi DSA00276 2SK2978 HAT1024R ADE-208-476G HAT1044M HAT2053M HAT2054M

2SK3235

Abstract: 2SK3379 2SK3148 2SK3152 2SK3153 2SK3155 2SK3157 2SK3160 2SK3162 2SK3177 2SK3207 2SK3209 2SK3212 H5N5001FM
Hitachi Semiconductor
Original
2SK3235 2SK3379 HAT1053 2SJ517 HAT1040T 2SK3421 HAT2038R/HAT2038RJ ADE-208-666C HAT2038R HAT2038RJ

2SC 8550

Abstract: 6020v4 2SK3160 2SK3162 2SK3177 2SK3209 2SK3212 H5N5001FM H5N5006FM H7N1004FM H7N1005FM 2SJ479(L)/(S
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Original
2SC 8550 6020v4 6030v4 HITACHI 08122B 2SC 8050 HITACHI 08123B 2SK3390 2SA2080 2SA2081 2SC4260 2SC4261 2SC4262

rjh3047

Abstract: rjh3077 2sk3160 2sk3161ls 2sk3162 2sk3163 2sk3177 2sk3203ls 2sk3207 2sk3209 2sk3210ls 2sk3211ls 2sk3212
Renesas Technology
Original
rjh3047 rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 REJ01G0001-0400

1002ds

Abstract: 6020v4 2SK3159 2SK3160 2SK3161L 2SK3162 2SK3163 2SK3177 2SK3203L 2SK3207 2SK3209 2SK3210L 2SK3211L 2SK3212
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Original
1002ds TRANSISTOR BJ 131-6 transistor 2sc1417 transistor h945 25aaj TRANSISTOR 131-6 BJ 026 2SC5998 ADE-408-002G ADE-408-008G ADE-408-009G ADE-408-004E ADE-408-005C

1002ds

Abstract: 4008ZB 2SK3148 2SK3152 2SK3153 2SK3155 2SK3157 2SK3160 2SK3162 2SK3177 2SK3207 2SK3209 2SK3212 H5N5001FM
Renesas Technology
Original
4008ZB 2SC 9012 MP 1009 es 20AAJ-8H 2SC1417 cr3as AT2196C HAT2202C HAT2203C HAT2204C HAT2205C HAT2206C