NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Part | Manufacturer | Description | Type | Ordering |
| 2SK3117 | Toshiba | Power MOSFET Selection Guide with Cross Reference Data |
45 pages, |
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| 2SK3117 | Toshiba | Power MOSFETs Cross Reference Guide |
67 pages, |
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| 2SK3117 | Toshiba | Silicon N-channel MOS type field effect transistor for high speed, high current switching, chopper regulator, DC-DC converter and motor drive applications |
5 pages, |
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| 2SK3117 | Toshiba |
9 pages, |
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| 2SK3117 | Toshiba | Field Effect Transistor Silicon N Channel MOS Type (Pi-MOS V) |
5 pages, |
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| Catalog Datasheet Results | Type | Document Tags |
| Abstract: 2SK3117 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK3117 Chopper Regulator DC-DC Converter, and Motor Drive Applications l Low drain-source ON resistance : RDS (ON) = , caution. 1 2002-09-04 2SK3117 Electrical Characteristics (Ta = 25°C) Characteristics Gate , 2SK3117 3 2002-09-04 2SK3117 4 2002-09-04 2SK3117 RG = 25 VDD = 90 V, L = 4.08 mH 5 EAS = 1 BVDSS æ ö Ã- L Ã- I2 Ã- ç ÷ 2 è BVDSS - VDD ø 2002-09-04 2SK3117 ... | Original |
6 pages, |
2-16H1B 2SK3117 2SK3117 abstract |
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| Abstract: 2SK3117 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK3117 Chopper , an electrostatic-sensitive device. Please handle with caution. 1 2006-11-06 2SK3117 , TOSHIBA K3117 K3117 Part No. (or abbreviation code) Lot No. 2 2006-11-06 2SK3117 3 2006-11-06 2SK3117 4 2006-11-06 2SK3117 RG = 25 VDD = 90 V, L = 4.08 mH 5 EAS = 1 BVDSS L I2 2 BVDSS - VDD 2006-11-06 2SK3117 RESTRICTIONS ON PRODUCT USE ... | Original |
6 pages, |
2SK3117 K3117 2SK3117 abstract |
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| Abstract: 2SK3117 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK3117 Chopper , an electrostatic-sensitive device. Please handle with caution. 1 2004-07-06 2SK3117 , TOSHIBA K3117 K3117 Part No. (or abbreviation code) Lot No. 2 2004-07-06 2SK3117 3 2004-07-06 2SK3117 4 2004-07-06 2SK3117 RG = 25 VDD = 90 V, L = 4.08 mH 5 EAS = 1 BVDSS L I2 2 BVDSS - VDD 2004-07-06 2SK3117 RESTRICTIONS ON PRODUCT USE ... | Original |
6 pages, |
2SK3117 K3117 2SK3117 abstract |
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| Abstract: 2SK3117 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK3117 Chopper , electrostatic-sensitive device. Please handle with caution. 1 2006-11-06 2SK3117 Electrical Characteristics , TOSHIBA K3117 K3117 Part No. (or abbreviation code) Lot No. 2 2006-11-06 2SK3117 3 2006-11-06 2SK3117 4 2006-11-06 2SK3117 RG = 25 VDD = 90 V, L = 4.08 mH 5 EAS = 1 BVDSS L I2 2 BVDSS - VDD 2006-11-06 2SK3117 RESTRICTIONS ON PRODUCT USE ... | Original |
6 pages, |
K311 2SK3117 K3117 2SK3117 abstract |
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| Abstract: TOSHIBA 2SK3117 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (tt-MOSV) 2SK3117 , /5 TOSHIBA 2SK3117 ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION , (Starting from Alphabet A) I-Year (Last Number of the Christian Era) 1999-11-10 2/5 TOSHIBA 2SK3117 id - , 3 10 30 DRAIN CURRENT ID (A) 70 1999-11-10 3/5 TOSHIBA 2SK3117 1.0 RDS(ON) - Te IDR - VDS « , 120 TOTAL GATE CHARGE Q„ (nC) 1999-11-10 4/5 TOSHIBA 2SK3117 rth - tv < Q SAFE OPERATING AREA ... | OCR Scan |
5 pages, |
FTC 960 2SK3117 2SK3117 abstract |
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| Abstract: TOSHIBA 2SK3117 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (tt-MOSV) 2SK3117 , /5 TOSHIBA 2SK3117 ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION , (Starting from Alphabet A) I-Year (Last Number of the Christian Era) 1999-07-23 2/5 TOSHIBA 2SK3117 id - , 3 10 30 DRAIN CURRENT ID (A) 70 1999-07-23 3/5 TOSHIBA 2SK3117 1.0 RDS(ON) - Te IDR - VDS « , 120 TOTAL GATE CHARGE Q„ (nC) 1999-07-23 4/5 TOSHIBA 2SK3117 rth - tv < Q SAFE OPERATING AREA ... | OCR Scan |
5 pages, |
FTC 960 2SK3117 2SK3117 abstract |
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| Abstract: 2SK2600 2SK2600 2SK2776 2SK2776 2SK2601 2SK2601 2SK2842 2SK2842 2SK3068 2SK3068 2SK3398 2SK3398 2SK2916 2SK2916 2SK2698 2SK2698 2SK2917 2SK2917 2SK3117 2SK2837 2SK2837 2SK3132 2SK3132 ... | Original |
16 pages, |
TO-220FL 2sk3067 MOSFET 900V TO-220 2sk2915 equivalent 2SK3569 equivalent 2SK3497 2sk2842 2sk2717 transistor 2SK2750 transistor 2sk2545 2SJ618 2SK2545 2SK2837 equivalent 2SK2996 equivalent datasheet abstract |
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| Abstract: (0.105) 2SK3445 2SK3445 (0.105) 2SK1489 2SK1489 (1.0) 2SK2837 2SK2837 (0.27) 2SK3117 (0.27) 14 New product series , 2SK3117 500 20 150 TO-3P (SM) 0.21 0.27 10 10 80 2SK3132 2SK3132 500 50 250 ... | Original |
22 pages, |
2SK3498 2SK3407 TPCA8004 MOSFET TOSHIBA 2SK TPC8206 2SK2962 2sj618 TPC8405 2SK1382 complementary MOSFET 2sk 2SK3868 2SK3265 2SK3342 2SK3497 datasheet abstract |
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| Abstract: (0.105) 2SK3445 2SK3445 (0.105) 2SK1489 2SK1489 (1.0) 2SK2837 2SK2837 (0.27) 2SK3117 (0.27) 14 New product series , 2SK3117 500 20 150 TO-3P (SM) 0.21 0.27 10 10 80 2SK3132 2SK3132 500 50 250 ... | Original |
28 pages, |
SK3403 TPC8107 equivalent 2sk2698 mosfet TPC8206 tpc8303 2SK1530 tpca8103 complementary MOSFET 2sk tpc8107 mosfet 2SK2718 2SK3567 equivalent SK3090 2SK3667 equivalent 2SK3868 datasheet abstract |
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| Abstract: 2SK1603 ) 2SK3445 2SK3445(0.105) 2SK3994 2SK3994(0.105) TK19H50C TK19H50C(0.3) 2SK2837 2SK2837(0.27) 2SK3117(0.27) 2SK4108 2SK4108(0.27) TK20H50C TK20H50C ... | Original |
36 pages, |
2SK4115* equivalent 2SK3934 Equivalent 2SK3565 equivalent 2SK2837 equivalent 2SK3799 2SK2996 equivalent 2SK3567 equivalent 2sK4111 equivalent 2sK2961 equivalent 2SK3799 equivalent 2sk3797 equivalent 2sk4113 2SK2843 equivalent datasheet abstract |
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| Abstract: ) 2SK3994 2SK3994(0.105) 30 TK19H50C TK19H50C(0.3) 2SK2837 2SK2837(0.27) 2SK3117(0.27) TK20H50C TK20H50C(0.27) 2SK2967 2SK2967(0.068 ... | Original |
23 pages, |
TC90200FG tmpa8873cpbng Tb1307fG TMPA8851 TMPA8899 TC90A96 TMPA8857 TMPA8853 gt30G122 gt30f122 TMPA8893CXBNG tmp*a8873 TMPA8891 TC90A96BFG datasheet abstract |
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| Abstract: 2SK2837 2SK2837 0.27 2SK3117 15 18 20 2.0 2SK2749 2SK2749 0.8 2SJ516 2SJ516 8 8.5 9 2.5 2SK2610 2SK2610 2.5 ... | Original |
23 pages, |
TA8822SN ta7347p TA8427K 2sc5570 5TUZ47 TA7607AP tb1238 an TMP87CM38N f062dsl TA1222 tb1226dn 2sc5331 ta1300n F1814B TA8792 datasheet abstract |
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| Infineon (Siemens) Part | Status | Industry Part | Manufacturer | Description |
| IPW50R299CP Buy | 2SK3117 Buy | Toshiba | N-Channel MOSFETs (500V...900V) |
| Ixys Corp. Part | Ixys Description | Industry Part | Manufacturer | Description | Type |
| IXTQ22N50P Buy | VDSS (V)=500, ID@TC=25°C(A)=22, RDS(on) max @TJ=25°C(Ohm)=0.2700 | 2SK3117 Buy | Toshiba | VDSS (V)=500, ID@TC=25°C(A)=20, RDS(on) max @TJ=25°C(Ohm)=0.2700 | Close |