2SK3115 D13338EJ1V0DS00 MP-45F

MOS FIELD EFFECT TRANSISTOR 2SK3115 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE Description The 2SK3115 is N-Channel DMOS

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3115 2SK3115 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE Description The 2SK3115 2SK3115 is N-Channel DMOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. Ordering Information Features · Low gate charge QG = 26 nC TYP. Part number (VDD = 450 V, VGS = 10 V, ID 2SK3115 2SK3115 = 6.0 A) · Gate voltage rating ±30 V Package Isolated TO-220 · Low on-state resistance RDS(on) = 1.2 MAX. (VGS = 10 V, ID = 3.0 A) · Avalanche capability ratings Absolute Maximum Ratings (TA = 25 °C) Drain to source voltage (VGS = 0) VDSS 600 V Gate to source voltage (VDS = 0) VGSS ±30 V Drain current (DC) (TC = 25 °C) ID(DC) ±6.0 A ID(pulse) ±24 A Total power dissipation (TA = 25 °C) PT1 2.0 W Total power dissipation (TC = 25 °C) PT2 35 W Channel temperature Tch 150 °C Drain current (pulse) Note1 Tstg -55 to +150 °C Single avalanche current Note2 IAS 6.0 A Single avalanche energy Note2 EAS 24 mJ dv/dt 3.5 V/ns Storage temperature Diode recovery dv/dt Note3 Notes 1. PW 10 µs, Duty Cycle 1 % 2. Starting Tch = 25 °C, VDD = 150 V, RG = 25 , VGS = 20 V 0 3. IF 3.0 A, Vclamp = 600 V, di/dt 100 A/µs, TA = 25 °C The information in this document is subject to change without notice. Document No. D13338EJ1V0DS00 D13338EJ1V0DS00 (1st edition) Date Published October 1998 NS CP (K) Printed in Japan The mark · shows major revised points. © 1998 2SK3115 2SK3115 Electrical Characteristics (TA = 25 °C) Characteristics Symbol MIN. TYP. MAX. Unit Test Conditions Drain leakage current IDSS 100 µA VDS = 600 V, VGS = 0 Gate to source leakage current IGSS ±100 nA VGS = ±30 V, VDS = 0 3.5 V VDS = 10 V, ID = 1 mA S VDS = 10 V, ID = 3.0 A VGS = 10 V, ID = 3.0 A VDS = 10 V, VGS = 0, f = 1 MHz Gate to source cutoff voltage VGS(off) 2.5 Forward transfer admittance | yfs | 2.0 Drain to source on-resistance RDS(on) 0.9 Input capacitance Ciss 1100 pF Output capacitance Coss 200 pF Reverse transfer capacitance Crss 20 pF Turn-on delay time td(on) 18 ns VDD = 150 V, ID = 3.0 A, tr 12 ns VGS(on) = 10 V, RG = 10 , RL = 50 td(off) 50 ns tf 15 ns Total gate charge QG 26 nC VDD = 450 V, VGS = 10 V, Gate to source charge QGS 6 nC ID = 6.0 A Gate to drain charge QGD 10 nC VF(S-D) 1.0 V IF = 6.0 A, VGS = 0 Reverse recovery time trr 1.4 µs IF = 6.0 A, VGS = 0, Reverse recovery charge Qrr 6.5 µC di/dt = 50 A/µs Rise time Turn-off delay time Fall time Body diode forward voltage Test Circuit 1 Avalanche Capability Test Circuit 2 Switching Time D.U.T. D.U.T. RG = 25 PG. VGS = 20 0 V 1.2 L 50 VGS RL RG RG = 10 PG. VDD VGS Wave Form 0 VGS(on) 10 % 90 % VDD ID 90 % 90 % BVDSS IAS ID ID VGS 0 ID VDS VDD Starting Tch Test Circuit 3 Gate Charge D.U.T. IG = 2 mA PG. 2 50 0 10 % 10 % Wave Form RL VDD = 1 µs Duty Cycle 1 % td(on) tr ton td(off) tf toff 2SK3115 2SK3115 Typical Characteristics (TA = 25 °C) DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE FORWARD TRANSFER CHARACTERISTICS Pulsed 100 ID - Drain Current - A ID - Drain Current - A 25 VGS = 10 V 20 8V 15 6V 10 Tch = 125 °C 75 °C 10 Tch = 25 °C -25 °C 1.0 0.1 5 10 0 20 30 40 0 5 10 VDS = 10 V Pulsed 15 VGS - Gate to Source Voltage - V GATE TO SOURCE CUTOFF VOLTAGE vs. CHANNEL TEMPERATURE FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 5.0 | yfs | - Forward Transfer Admittance - S VGS(off) - Gate to Source Cutoff Voltage - V VDS - Drain to Source Voltage - V 4.0 3.0 2.0 1.0 VDS = 10 V ID = 1 mA 0 -50 0 50 100 150 10 Tch = -25 °C 25 °C 75 °C 125 °C 1.0 VDS = 10 V Pulsed 0.1 0.1 1.0 10 ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT Pulsed 2.0 ID = 6.0 A 3.0 A 1.0 0 0 4 8 12 16 VGS - Gate to Source Voltage - V 20 RDS(on) - Drain to Source On-State Resistance - RDS (on) - Drain to Source On-State Resistance - Tch - Channel Temperature - °C 2.0 Pulsed 1.6 1.2 VGS = 10 V 20 V 0.8 0.4 0 1.0 10 100 ID - Drain Current - A 3 DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE SOURCE TO DRAIN DIODE FORWARD VOLTAGE 3.0 ID = 6.0 A 3.0 A 2.0 1.0 VGS = 10 V Pulsed 0 -50 0 100 50 ISD - Diode Forward Current - A RDS (on) - Drain to Source On-State Resistance - 2SK3115 2SK3115 100 10 1.0 0.1 150 VGS = 10 V 0 Tch - Channel Temperature - °C 0V 0.5 Pulsed 1.5 1.0 VSD - Source to Drain Voltage - V SWITCHING CHARACTERISTICS CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE td(on), tr, td(off), tf - Switching Time - ns 10 000 Ciss 1 000 Coss 100 10 VGS = 0 V f = 1MHz 1 1.0 Crss 10 100 td(off) tf td(on) 10 tr 1 VDD = 150 V VGS = 10 V RG = 10 0.1 0.1 1 000 1 VDS - Drain to Source Voltage - V trr - Reverse Recovery Time - ns di/dt = 50 A/µs VGS = 0 V 1 000 100 10 0.1 1.0 10 ID - Drain Current - A 4 100 VDS - Drain to Source Voltage - V REVERSE RECOVERY TIME vs. DRAIN CURRENT 10 000 10 ID - Drain Current - A DYNAMIC INPUT/OUTPUT CHARACTERISTICS 16 ID = 6 A 14 VGS VDD = 450 V 600 12 300 V 120 V 10 400 8 6 200 4 VDS 2 0 10 20 30 Qg - Gate Charge - nC 0 40 VGS - Gate to Source Voltage - V Ciss, Coss, Crss - Capacitance - pF 100 2SK3115 2SK3115 DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 80 PT - Total Power Dissipation - W dT - Percentage of Rated Power - % 100 80 60 40 20 0 0 20 40 60 80 100 120 140 60 40 20 160 0 Tch - Channel Temperature - °C 20 40 60 80 100 120 140 160 TC - Case Temperature - °C FORWARD BIAS SAFE OPERATING AREA 100 ) ID(DC) (on RD Po we rD iss ipa tio n 1 0.1 1 PW d ite Lim 10 10 m 10 0m s Lim s ite d =1 0µ s 10 0µ s 1m s TC = 25°C Single Pulse 10 100 1 000 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH r th (t) - Transient Thermal Resistance - °C/W ID - Drain Current - A ID(pulse) 100 Rth(CH-A) = 62.5 °C/W 10 Rth(CH-C) = 3.57 °C/W 1 0.1 0.01 10µ 100µ 1m 10m 100m 1 10 100 1 000 PW - Pulse Width - s 5 2SK3115 2SK3115 10 IAS = 6 A EAS =2 120 Energy Derating Factor - % 100 IAS - Single Avalanche Energy - mJ SINGLE AVALANCHE ENERGY DERATING FACTOR SINGLE AVALANCHE ENERGY vs. INDUCTIVE LOAD 4m J 1.0 RG = 25 VDD = 150 V VGS = 20 V 0 Starting Tch = 25 °C 0.1 10µ 100µ 1m 10m VDD = 150 V RG = 25 VGS = 20V0 IAS 6 A 100 80 60 40 20 0 25 50 75 100 125 150 Starting Tch - Starting Channel Temperature - °C L - Inductive Load - H Package Drawing (Unit : mm) Isolated TO-220(MP-45F MP-45F) 10.0 ± 0.3 3.2 ± 0.2 4.5 ± 0.2 2.7 ± 0.2 12.0 ± 0.2 13.5MIN. 4 ± 0.2 3 ± 0.1 15.0 ± 0.3 Equivalent Circuit 1.3 ± 0.2 2.5 ± 0.1 0.65 ± 0.1 1.5 ± 0.2 2.54 0.7 ± 0.1 2.54 Drain (D) Body Diode Gate (G) Source (S) 1.Gate 2.Drain 3.Source 1 2 3 Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred. 6 2SK3115 2SK3115 [MEMO] 7 2SK3115 2SK3115 [MEMO] No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. Anti-radioactive design is not implemented in this product. M4 96. 5