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2SK2862 Datasheet

Part Manufacturer Description PDF Type Ordering
2SK2862 Toshiba Field Effect Transistor Silicon N Channel MOS Type
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5 pages,
281 Kb

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2SK2862 Toshiba Silicon N-channel MOS type field effect transistor for high speed, high voltage switching, DC-DC converter, relay drive & motor drive applications
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5 pages,
289.41 Kb

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2SK2862 Toshiba Power MOSFETs Cross Reference Guide
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67 pages,
161.9 Kb

Original Buy
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2SK2862 Toshiba FETs - Nch 250V<VDSS=500V; Surface Mount Type: N; Package: TO-220NIS; R DS On (max 3.2); P D (W): (max 3)
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6 pages,
413.89 Kb

Original Buy
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2SK2862 Toshiba Power MOSFET Selection Guide with Cross Reference Data
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45 pages,
1424.25 Kb

Original Buy
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2SK2862 Toshiba
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9 pages,
43.02 Kb

Original Buy
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2SK2862

Catalog Datasheet Results Type PDF Document Tags
Abstract: 2SK2862 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK2862 DC-DC , handle with caution. 1 2006-11-06 2SK2862 Electrical Characteristics (Ta = 25°C , lead (Pb)-free package or lead (Pb)-free finish. 2 2006-11-06 2SK2862 3 2006-11-06 2SK2862 4 2006-11-06 2SK2862 RG = 25 VDD = 90 V, L = 48.4 mH 5 EAS = B VDSS 1 L I2 B VDSS - VDD 2 2006-11-06 2SK2862 RESTRICTIONS ON PRODUCT USE ... Original
datasheet

6 pages,
712.03 Kb

2SK2862 K2862 2SK2862 abstract
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Abstract: 2SK2862 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK2862 DC-DC , device. Please handle with caution. 1 2004-07-06 2SK2862 Electrical Characteristics (Ta = 25°C , indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2004-07-06 2SK2862 3 2004-07-06 2SK2862 4 2004-07-06 2SK2862 RG = 25 VDD = 90 V, L = 48.4 mH 5 E AS = 1 B VDSS L I2 2 B VDSS - VDD 2004-07-06 2SK2862 RESTRICTIONS ON PRODUCT ... Original
datasheet

6 pages,
408.29 Kb

2SK2862 k2862 2SK2862 abstract
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Abstract: 2SK2862 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK2862 DC-DC Converter, Relay Drive and Motor Drive Applications l Low drain-source ON resistance : RDS (ON) = 2.9 , is an electrostatic sensitive device. Please handle with caution. 1 2002-09-04 2SK2862 , 2SK2862 3 2002-09-04 2SK2862 4 2002-09-04 2SK2862 RG = 25 VDD = 90 V, L = 48.4 mH 5 E AS = 1 B VDSS æ ö - L - I2 - ç ÷ 2 B VDSS - VDD ø è 2002-09-04 2SK2862 ... Original
datasheet

6 pages,
252.74 Kb

2SK2862 2SK2862 abstract
datasheet frame
Abstract: 2SK2862 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK2862 DC-DC , device. Please handle with caution. 1 2006-11-06 2SK2862 Electrical Characteristics (Ta = 25°C , lead (Pb)-free finish. 2 2006-11-06 2SK2862 3 2006-11-06 2SK2862 4 2006-11-06 2SK2862 RG = 25 VDD = 90 V, L = 48.4 mH E AS = 1 B VDSS L I2 2 B VDSS - VDD 5 2006-11-06 2SK2862 RESTRICTIONS ON PRODUCT USE · The information contained herein is subject to ... Original
datasheet

6 pages,
747.64 Kb

2SK2862 2SK2862 abstract
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Abstract: 2SK2862 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK2862 DC-DC , sensitive device. Please handle with caution. 1 2002-09-04 2SK2862 Electrical Characteristics (Ta , Unit A A A V ns µC Marking 2 2002-09-04 2SK2862 3 2002-09-04 2SK2862 4 2002-09-04 2SK2862 RG = 25 VDD = 90 V, L = 48.4 mH E AS = 1 B VDSS L I2 - 2 B V DD VDSS 5 2002-09-04 2SK2862 RESTRICTIONS ON PRODUCT USE 000707EAA 000707EAA · TOSHIBA is ... Original
datasheet

6 pages,
408.14 Kb

2SK2862 2SK2862 abstract
datasheet frame
Abstract: 2SK2862 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK2862 DC-DC Converter, Relay Drive and Motor Drive Applications Low drain-source ON resistance : RDS (ON) = 2.9 , handle with caution. 1 2009-09-29 2SK2862 Electrical Characteristics (Ta = 25°C , 2 2009-09-29 2SK2862 3 2009-09-29 2SK2862 4 2009-09-29 2SK2862 RG = 25 , 2SK2862 RESTRICTIONS ON PRODUCT USE · Toshiba Corporation, and its subsidiaries and affiliates ... Original
datasheet

6 pages,
413.89 Kb

2SK2862 k2862 2SK2862 abstract
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Abstract: 2SK2862 INDUSTRIAL APPLICATIONS Unit in mm Low Drain-Sorce ON Resistance : Rßg (ON) = 2.9 O (Typ.) High , 2SK2862 ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. , TOSHIBA 2SK2862 id - VDS id - VDS COMMON SOURCE Te = 25°C io y Ve 5.5 , 0.3 0.5 1 3 5 DRAIN CURRENT ID (A) 10 1999-06-24 3/5 TOSHIBA 2SK2862 RDS(ON) - Te IDR - VDS , \ / 20 16 12 12 16 20 TOTAL GATE CHARGE Qg (nC) 1999-06-24 4/5 TOSHIBA 2SK2862 SAFE OPERATING ... OCR Scan
datasheet

5 pages,
280.99 Kb

2SK2862 2SK2862 abstract
datasheet frame
Abstract: TOSHIBA 2SK2862 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (tt-MOSV) 2 S K 2 8 6 , 2SK2862 ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION MIN. typ. MAX. , TOSHIBA 2SK2862 id - vds id - vds COMMON SOURCE Te = 25°C io y Ve 5.5 , 0.3 0.5 1 3 5 DRAIN CURRENT ID (A) 10 2000-10-10 3/5 TOSHIBA 2SK2862 RDS(ON) - Te IDR - VDS , \ / 20 16 12 12 16 20 TOTAL GATE CHARGE Qg (nC) 2000-10-10 4/5 TOSHIBA 2SK2862 safe operating ... OCR Scan
datasheet

5 pages,
289.41 Kb

2SK2862 2SK2862 abstract
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Abstract: 2SK2839 2SK2839 2SK2840 2SK2840 2SK2841 2SK2841 2SK2842 2SK2842 2SK2843 2SK2843 2SK2844 2SK2844 2SK2845 2SK2845 2SK2846 2SK2846 2SK2847 2SK2847 2SK2859 2SK2859 2SK2862 2SK2865 2SK2865 , 2SK2841 2SK2841 A 2SK2842 2SK2842 A 2SK2843 2SK2843 A 2SK2844 2SK2844 A 2SK2845 2SK2845 A 2SK2846 2SK2846 A 2SK2847 2SK2847 A 2SK2862 2SK2865 2SK2865 , YTA630 YTA630 A YTA630 YTA630 A YTA630 YTA630 A 2SK2862 B 2SK2862 B 2SK2679 2SK2679 B 2SK2862 B 2SK3067 2SK3067 B 2SK3085 2SK3085 A ... Original
datasheet

67 pages,
161.9 Kb

harris SI9400DY BSP171 2sk2312 uPA1712 BUZ77A IRCZ44 "cross reference" SMP60N06-18 IRFD620 SPW20N60S5 equivalent SMP60N06 replacement BSS125 SMU10P05 2SK2837 equivalent YTA630 2N7000 2N7002 2N7000 abstract
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Abstract: 2SA1837 2SA1837 MOSFET N-ch VDSS V ID A 200250 400600 800 2SK2862 2SK3067 2SK3067 / 2SK2750 2SK2750 3 , 8.0 2SK2997 2SK2997 3.2 2SK2599 2SK2599 5.0 2SK2846 2SK2846 5.0 2SK2865 2SK2865 5.0 2SK3067 2SK3067 3.0 2SK2862 2 2.5 3.6 ... Original
datasheet

23 pages,
438.65 Kb

5TUZ47 TMP87CM38N ta7347p 8427k TA7607AP tb1253 TA1222 TB1251N tb1226dn 2sc5331 f062dsl tb1238 an ta1300n F1814B TB1238BN datasheet abstract
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SCRs 257 6630 X00602MA X00602MA X00602MA X00602MA 03P2M 03P2M 03P2M 03P2M Replacement NEC SENSITIVE GATE SCR SENSITIVE GATE SCRs SCRs 257 6630 X00602MA X00602MA X00602MA X00602MA 03P4M 03P4M 03P4M 03P4M Replacement NEC SENSITIVE GATE SCR SENSITIVE GATE SCRs SCRs 257 7482 P0111DA P0111DA P0111DA P0111DA 03P4MF 03P4MF 03P4MF 03P4MF Replacement NEC 0.8A SCRS SENSITIVE GATE SCRs SCRs 257 7482 P0111DA P0111DA P0111DA P0111DA 03P4MG 03P4MG 03P4MG 03P4MG Replacement NEC 0.8A SCRS SENSITIVE GATE SCRs SCRs 257 7480 X0205MA X0205MA X0205MA X0205MA 03P6MG 03P6MG 03P6MG 03P6MG Replacement NEC 1.25A SCRS SENSITIVE GATE SCRs 5067 M24C01-RBN6 M24C01-RBN6 M24C01-RBN6 M24C01-RBN6 24AA01-I/P 24AA01-I/P 24AA01-I/P 24AA01-I/P Replacement MICROCHIP 16K/8K/4K/2K/1K 16K/8K/4K/2K/1K 16K/8K/4K/2K/1K 16K/8K/4K/2K/1K SERIAL I 2 C BUS EEPROM 5067
www.datasheetarchive.com/files/stmicroelectronics/stonline/db/xref-v4.txt
STMicroelectronics 31/01/2001 1362.78 Kb TXT xref-v4.txt
SCRs 257 6630 X00602MA X00602MA X00602MA X00602MA 03P2M 03P2M 03P2M 03P2M Replacement Nec SENSITIVE GATE SCR SENSITIVE GATE SCRs SCRs 257 6630 X00602MA X00602MA X00602MA X00602MA 03P4M 03P4M 03P4M 03P4M Replacement Nec SENSITIVE GATE SCR SENSITIVE GATE SCRs 5067 M24C01-RBN6 M24C01-RBN6 M24C01-RBN6 M24C01-RBN6 24AA01-I/P 24AA01-I/P 24AA01-I/P 24AA01-I/P Replacement Microchip 16K/8K/4K/2K/1K 16K/8K/4K/2K/1K 16K/8K/4K/2K/1K 16K/8K/4K/2K/1K SERIAL I 2 C BUS EEPROM 5067 M24C01-RMN6 M24C01-RMN6 M24C01-RMN6 M24C01-RMN6 24AA01-I/SN 24AA01-I/SN 24AA01-I/SN 24AA01-I/SN Replacement Microchip 16K/8K/4K/2K/1K 16K/8K/4K/2K/1K 16K/8K/4K/2K/1K 16K/8K/4K/2K/1K SERIAL I 2 C BUS EEPROM 5067 M24C01-RBN6 M24C01-RBN6 M24C01-RBN6 M24C01-RBN6 24AA01/P 24AA01/P 24AA01/P 24AA01/P Replacement Microchip 16K/8K/4K/2K/1K 16K/8K/4K/2K/1K 16K/8K/4K/2K/1K 16K/8K/4K/2K/1K SERIAL I 2 C BUS EEPROM 5067 M24C01-RMN6 M24C01-RMN6 M24C01-RMN6 M24C01-RMN6 24AA01/SN 24AA01/SN 24AA01/SN 24AA01/SN Replacement Mi
www.datasheetarchive.com/files/stmicroelectronics/stonline/db/xref-v1.txt
STMicroelectronics 20/10/2000 1859.39 Kb TXT xref-v1.txt
SCRs 257 6630 X00602MA X00602MA X00602MA X00602MA 03P2M 03P2M 03P2M 03P2M Replacement Nec SENSITIVE GATE SCR SENSITIVE GATE SCRs SCRs 257 6630 X00602MA X00602MA X00602MA X00602MA 03P4M 03P4M 03P4M 03P4M Replacement Nec SENSITIVE GATE SCR SENSITIVE GATE SCRs 5067 M24C01-RBN6 M24C01-RBN6 M24C01-RBN6 M24C01-RBN6 24AA01-I/P 24AA01-I/P 24AA01-I/P 24AA01-I/P Replacement Microchip 16K/8K/4K/2K/1K 16K/8K/4K/2K/1K 16K/8K/4K/2K/1K 16K/8K/4K/2K/1K SERIAL I 2 C BUS EEPROM 5067 M24C01-RMN6 M24C01-RMN6 M24C01-RMN6 M24C01-RMN6 24AA01-I/SN 24AA01-I/SN 24AA01-I/SN 24AA01-I/SN Replacement Microchip 16K/8K/4K/2K/1K 16K/8K/4K/2K/1K 16K/8K/4K/2K/1K 16K/8K/4K/2K/1K SERIAL I 2 C BUS EEPROM 5067 M24C01-RBN6 M24C01-RBN6 M24C01-RBN6 M24C01-RBN6 24AA01/P 24AA01/P 24AA01/P 24AA01/P Replacement Microchip 16K/8K/4K/2K/1K 16K/8K/4K/2K/1K 16K/8K/4K/2K/1K 16K/8K/4K/2K/1K SERIAL I 2 C BUS EEPROM 5067 M24C01-RMN6 M24C01-RMN6 M24C01-RMN6 M24C01-RMN6 24AA01/SN 24AA01/SN 24AA01/SN 24AA01/SN Replacement Microch
www.datasheetarchive.com/files/stmicroelectronics/stonline/db/xref-v3.txt
STMicroelectronics 20/10/2000 1842.28 Kb TXT xref-v3.txt

Fairchild Cross Reference Results

Fairchild Part Orderable Industry Part Manufacturer Type Family Description
FQP3N60C FQP3N60C Buy 2SK2862 Buy Toshiba Direct Power MOSFET 600V N-Channel MOSFET QFET

Infineon (Siemens) Cross Reference Results

Infineon (Siemens) Part Status Industry Part Manufacturer Description
SPD02N50C3 Buy 2SK2862 Buy Toshiba

NTE Electronics Cross Reference Results

NTE Electronics Part Industry Part
NTE2387 Buy 2SK2862 Buy

STMicroelectronics Cross Reference Results

STMicroelectronics Part Industry Part Manufacturer Type Description
STP4NB50FP Buy 2SK2862 Buy Toshiba Replacement Power MOSFETs - High Voltage

Misc. Cross Reference Results

Part Similar Part Notes
2SK2862 Buy STP4NK50ZFP Buy