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Part : 2SK2862 Supplier : Toshiba Manufacturer : basicEparts Stock : 21,900 Best Price : - Price Each : -
Part : 2SK2862(Q) Supplier : Toshiba Manufacturer : Chip1Stop Stock : 530 Best Price : $4.17 Price Each : $5.34
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2SK2862 Datasheet

Part Manufacturer Description PDF Type
2SK2862 Toshiba Power MOSFETs Cross Reference Guide Original
2SK2862 Toshiba FETs - Nch 250V<VDSS=500V; Surface Mount Type: N; Package: TO-220NIS; R DS On (max 3.2); P D (W): (max 3) Original
2SK2862 Toshiba Power MOSFET Selection Guide with Cross Reference Data Original
2SK2862 Toshiba Original
2SK2862 Toshiba Field Effect Transistor Silicon N Channel MOS Type Scan
2SK2862 Toshiba Silicon N-channel MOS type field effect transistor for high speed, high voltage switching, DC-DC converter, relay drive & motor drive applications Scan

2SK2862

Catalog Datasheet MFG & Type PDF Document Tags

2SK2862

Abstract: 2SK2862 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK2862 DC-DC Converter, Relay Drive and Motor Drive Applications l Low drain-source ON resistance : RDS (ON) = 2.9 , is an electrostatic sensitive device. Please handle with caution. 1 2002-09-04 2SK2862 , 2SK2862 3 2002-09-04 2SK2862 4 2002-09-04 2SK2862 RG = 25 VDD = 90 V, L = 48.4 mH 5 E AS = 1 B VDSS æ ö × L × I2 × ç ÷ 2 B VDSS - VDD ø è 2002-09-04 2SK2862
Toshiba
Original
SC-67 2-10R1B
Abstract: 2SK2862 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK2862 DC-DC , device. Please handle with caution. 1 2006-11-06 2SK2862 Electrical Characteristics (Ta = 25 , lead (Pb)-free finish. 2 2006-11-06 2SK2862 3 2006-11-06 2SK2862 4 2006-11-06 2SK2862 RG = 25 VDD = 90 V, L = 48.4 mH E AS = 1 B VDSS L I2 2 B VDSS - VDD 5 2006-11-06 2SK2862 RESTRICTIONS ON PRODUCT USE · The information contained herein is subject to Toshiba
Original

2SK2862

Abstract: TOSHIBA 2SK2862 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (tt-MOSV) 2 S K 2 , /5 TOSHIBA 2SK2862 ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION , Christian Era) 2000-10-10 2/5 TOSHIBA 2SK2862 id - vds id - vds COMMON SOURCE Te = 25°C io y Ve , 0.3 0.5 1 3 5 DRAIN CURRENT ID (A) 10 2000-10-10 3/5 TOSHIBA 2SK2862 RDS(ON) - Te IDR - VDS , /5 TOSHIBA 2SK2862 safe operating area < n 0.5 0.3 0.1 0.05 0.03 0.01 eas - tch I I I I I I
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OCR Scan

2SK2862

Abstract: APPLICATIONS 2SK2862 INDUSTRIAL APPLICATIONS Unit in mm Low Drain-Sorce ON Resistance : RÃg (ON) = 2.9 O , 1/5 TOSHIBA 2SK2862 ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST , Christian Era) 1999-06-24 2/5 TOSHIBA 2SK2862 id - VDS id - VDS COMMON SOURCE Te = 25°C io y Ve , 0.3 0.5 1 3 5 DRAIN CURRENT ID (A) 10 1999-06-24 3/5 TOSHIBA 2SK2862 RDS(ON) - Te IDR - VDS , ) 1999-06-24 4/5 TOSHIBA 2SK2862 SAFE OPERATING AREA < n 0.5 0.3 0.1 0.05 0.03 0.01 EAS - Tch I I I I
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OCR Scan
Abstract: 2SK2862 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK2862 DC-DC Converter, Relay Drive and Motor Drive Applications Low drain-source ON resistance High forward transfer , . Please handle with caution. 1 2002-09-04 2SK2862 Electrical Characteristics (Ta = 25 , Marking 2 2002-09-04 2SK2862 3 2002-09-04 2SK2862 4 2002-09-04 2SK2862 RG , 2SK2862 RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually working to improve the Toshiba
Original

K2862

Abstract: 2SK2862 2SK2862 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK2862 DC-DC , handle with caution. 1 2006-11-06 2SK2862 Electrical Characteristics (Ta = 25 , lead (Pb)-free package or lead (Pb)-free finish. 2 2006-11-06 2SK2862 3 2006-11-06 2SK2862 4 2006-11-06 2SK2862 RG = 25 VDD = 90 V, L = 48.4 mH 5 EAS = B VDSS 1 L I2 B VDSS - VDD 2 2006-11-06 2SK2862 RESTRICTIONS ON PRODUCT USE 20070701
Toshiba
Original
K2862

k2862

Abstract: 2SK2862 2SK2862 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK2862 DC-DC , device. Please handle with caution. 1 2004-07-06 2SK2862 Electrical Characteristics (Ta = 25 , indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2004-07-06 2SK2862 3 2004-07-06 2SK2862 4 2004-07-06 2SK2862 RG = 25 VDD = 90 V, L = 48.4 mH 5 E AS = 1 B VDSS L I2 2 B VDSS - VDD 2004-07-06 2SK2862 RESTRICTIONS ON PRODUCT
Toshiba
Original
Abstract: TOSHIBA 2SK2862 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE ( tt-M OSV) 2SK2862 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS DC-DC CONVERTER , contained herein is subject to change without notice. 1999 06-24 1/5 - TO SHIBA 2SK2862 , 2SK2862 R d s (o n ) - Te < oá Û H Ã" 1 & O 63 £ Ed > Cd Û3 Pw 5 Zog ° 555 , § tï a â CASE TEMPERATURE Tc (°C) 1999 06-24 4/5 - TOSHIBA 2SK2862 rth -
OCR Scan

k2862

Abstract: 2SK2862 2SK2862 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK2862 DC-DC Converter, Relay Drive and Motor Drive Applications Low drain-source ON resistance : RDS (ON) = 2.9 , handle with caution. 1 2009-09-29 2SK2862 Electrical Characteristics (Ta = 25 , . 2 2009-09-29 2SK2862 3 2009-09-29 2SK2862 4 2009-09-29 2SK2862 RG = 25 , 2SK2862 RESTRICTIONS ON PRODUCT USE · Toshiba Corporation, and its subsidiaries and affiliates
Toshiba
Original

YTA630

Abstract: MTW14P20 2SK2839 2SK2840 2SK2841 2SK2842 2SK2843 2SK2844 2SK2845 2SK2846 2SK2847 2SK2859 2SK2862 2SK2865 , 2SK2841 A 2SK2842 A 2SK2843 A 2SK2844 A 2SK2845 A 2SK2846 A 2SK2847 A 2SK2862 2SK2865 , 2SK2399 B 2SK2399 B 2SK2399 B YTA630 A YTA630 A YTA630 A YTA630 A 2SK2862 B 2SK2862 B 2SK2679 B 2SK2862 B 2SK3067 B 2SK3085 A 2SK2997 B 2SK2603 A 2SK2603 A 2SK2603 B 2SK2603 B
Toshiba
Original
MTW14P20 BSS125 MTAJ30N06HD SMP60N06 replacement SMU10P05 2SK2837 equivalent 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401

TB1253N

Abstract: TB1240 400600 800 2SK2862 2SK3067 / 2SK2750 3 3.5 3 900 2SK2700 4 5 2SK2381 , 2SK2865 5.0 2SK3067 3.0 2SK2862 2 2.5 3.6 2SK2603 3.6 2SK2883 3 6.4 2SK2718 4.3
Toshiba
Original
TB1253N TB1240 TA8792N TA8792 tb1238 f062dsl TA1231F/FN SSOP16 TA1281FN TA1303AFN SSOP30 TA1324FN

MOSFET TOSHIBA 2SK2917

Abstract: 2sK2750 equivalent 2SK3126 2SK3471 2SK2998 2SK3302 2SK2599 2SK2862 2SK2662 2SK2661 2SK2991 2SK3466 2SK2542 2SK2543
Toshiba
Original
MOSFET TOSHIBA 2SK2917 2sK2750 equivalent 2SK3759 2SJ618 2SK3767 2SK2842 equivalent DP0540004 2SK3310

2sk3625

Abstract: 2SK3566 equivalent (3.2) 2SJ567 (2.0) 2SK2718 (6.4) 2SK3566 (6.4) 2SK3762 (6.4) 2SK3462 (1.7) 3 2SK2862 , 2.9 3.2 10 1 9 2SK2862 500 3 25 TO-220 (NIS) 2.9 3.2 10 1 9
-
Original
2SK2962 2sk3625 2SK3566 equivalent NTPCA8008-H 2SK3868 2SK3878 2sk 2sj complementary mosfet 2SK2963 2SJ508 2SJ509 2SK3670 2SJ313

fqp60n06

Abstract: SSH6N80 2SK2838 2SK2841 2SK2862 2SK2865 2SK2866 2SK2883 2SK2884 2SK2889 2SK2915 2SK2916 2SK2920 2SK2949
STMicroelectronics
Original
fqp60n06 SSH6N80 spb32N03l SMP60N03-10L SSP80N06A IRF540 application STP7NB40 STT3PF30L STD20NE03L STP60NE03L-12 STP60NE03L-10 STP40NF03L

TA1343NG

Abstract: TB1318FG ) 2SK2862(3.2) 4.5 2SK4003(2.2) 2SK3975(2.2) TPCA8008-H(0.58) 2SK1119(3.8) 2SK1930(3.8
Toshiba
Original
TA1343NG TB1318FG pal 011 A SPEAKER OUTPUT IC TC90A96BFG tmpa8859 Toshiba TMPA8873 TA1375FG TA1396FG SSOP24 TA1398FNG LQFP48 TA1395FNG

2SK3878 equivalent

Abstract: 2sk2611 (6.4) 2SK3566 (6.4) 2SK3762 (6.4) 2SK3462 (1.7) 3 2SK2862 (3.0) 2SK2603 (3.6) 2SK2883 (3.6 , 2.9 3.2 10 1 9 2SK2862 500 3 25 TO-220 (NIS) 2.9 3.2 10 1 9
-
Original
2SK2013 2SK3878 equivalent 2sk2611 2SK3869 toshiba POWER MOS FET 2sj 2sk POWER MOS FET 2sj 2sk 2SJ338 2SK2162 2SJ360 2SJ507 2SK2964

K2057

Abstract: toshiba k2057 2SK2862(3.2) 2SK3462(1.7)2 2SK2603(3.6)2 2SK2883(3.6)2 2SK2608(4.3)2 2SK2700(4.3)2 2SK2719(4.3 , 2SK2599 2SK2862 2SK2661 2SK2662 2SK2991 2SK2542 2SK2543 2SK2776 2SK2601 2SK2972 2SK2842 2SK3068
Toshiba
Original
2SK794 K2057 toshiba k2057 tpc8107 equivalent 2SK2313 equivalent 2SK2996 equivalent BCE0017A 2SK2746 2SK2606 2SK2610 2SK261

2sK2750 equivalent

Abstract: 2SK3567 equivalent 2SK3743 2SK2862 2SK2662 2SK3316* 2SK2543 2SK2842 2SK3313* 2SK3067 2SK2750 2SK2545 2SK3947
Toshiba
Original
2SK3567 equivalent 4614 mosfet 2SK3799 equivalent TPC8107 application circuit 2SK3561 equivalent 2SK2545 equivalent POWERMOSFET07 TPC6004 TPC6003 TPC6005 TPC6006-H TPC6105

fqp60n06

Abstract: spb32N03l 2SK2838 2SK2841 2SK2862 2SK2865 2SK2866 2SK2883 2SK2884 2SK2889 2SK2915 2SK2916 2SK2920 2SK2949
STMicroelectronics
Original
rfp60n06 FQP50N10 STP55NF06 AND ITS EQUIVALENT FSD6680 HGTG*N60A4D SFP70N03 STP80NE03L-06 STS4DPF30L STB70NF03L STB55NF03L STW18NB40 STS8NFS30L

2SK2056

Abstract: 2SK1603 2SK2846 2SK2847 2SK2862 2SK2865 2SK2866 2SK2882 2SK2883 2SK2884 2SK2886 2SK2889 2SK2914 2SK2915
Toshiba
Original
2SJ239 2SJ241 2SK2056 2SK1603 2SK1723 2sk1377 transistor 2SK1603 2SK2146 2SJ147 2SJ183 2SJ200 2SJ201 2SJ224 2SJ238

K2543

Abstract: MOSFET TOSHIBA 2SK 2SK2952 2SK2841 2SK2949 2SK3126 2SK2998 2SK3302 2SK2599 2SK2862 2SK2661 2SK2662 2SK2991 2SK2542
Toshiba
Original
K2543 MOSFET TOSHIBA 2SK equivalent 2sk2698 mosfet MOSFET VDS 220V TO-220 transistor k2543 2SK2837

2sk4110

Abstract: 2SK4106 ) 2SK3566(6.4) 2.5 2.7 2SK2862(3.2) 2SK3462(1.7) 2SK4022(1.7) 2SK4003(2.2) 2SK3975(2.2
Toshiba
Original
2sk4110 2SK4106 2SK4111 2sk3797 equivalent 2sK2961 equivalent 2SK2843 equivalent BCE0017D S-167 BCE0017E

2SK3567 equivalent

Abstract: 2SK3569 equivalent (0.072) TPCP8402 (0.072) 3.2 2SK2862 (3.2) 2SK3462 (1.7) 2SK4022 (1.7) 2SK2603 (3.6
Toshiba
Original
2SK3569 equivalent TPCA*8023 TK8A50D equivalent 2SK941 equivalent tpca8023 tk10a60d equivalent BCE0017F E-28831 BCE0017G
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