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Part : 2SK2862(Q) Supplier : Toshiba Manufacturer : Chip1Stop Stock : 530 Best Price : $5.69 Price Each : $5.69
Shipping cost not included. Currency conversions are estimated. 

2SK2862(Q)

Catalog Datasheet MFG & Type PDF Document Tags

2SK2862

Abstract: 0.1 0.3 0.5 1 3 5 DRAIN CURRENT ID (A) 10 co Q > 63 à c H J o > a g O w ¡5 3 Q H à £ < H CO a °o M w o g iD« O W â'¢k Q 10 COMMON SOURCE Te = 25 , 0 -80 co Q > 63 à c H J o > a g O w ¡5 3 Q 500 400 300 200 100 -40 0 40 80 120
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OCR Scan
2SK2862 SC-67 2-10R1B

2SK2862

Abstract: 0.1 0.3 0.5 1 3 5 DRAIN CURRENT ID (A) 10 Q > 63 à c H J o > a g O w ¡5 3 Q H à  , 0L -80 co Q > 63 à c H J o > a g O 500 400 300 200 100 -40 0 40 80 120 CASE
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OCR Scan
Abstract: à , ooö & Q < ¿2 Q IDR - VDS 10 5 3 COMMON SOURCE Tc = 25°C 0.5 0.3 , â'" t\v PULSE WIDTH tw (s) BAS - Tch SAFE OPERATING AREA < Q H 2i Pá £ » I ^ -
OCR Scan

2SK2862

Abstract: TC90A49P VIDEO IN RGB I/F Sprocess Y/C Y/I/Q TA1276AN RGB C-demo RGB control Y-process picture cont 4M Memory Y/C SEPA. YUV/RGB (NTSC 2line) Y/I/Q C-demo TC90A45P Sub Picture SW H/V PAP/PIP/POP Y/I/Q Ys Y/I/Q TC90A31F SCP BLK from , 3 YNR CNR Y/I/Q Y/I/Q 4Mbit EDO I2CBUS 11 YCIC 3YC NTSC , QFP52 4.5MHz LPF 5.73MHz BPF 12MHz BPF C/N NR 9V SSOP30 2nd IFAGC PLL I/Q 5V
Toshiba
Original
Abstract: Power MOSFET (High Voltage:more than 150V) Dec, 2003 TOSHIBA Semiconductor Company Discrete Semiconductor Division 2003 Dec DP0540004_01 1/16 Trend of High Speed and High Voltage Power MOSFETs R D S (ON )* Q s w ( O h m * n C) 8 VDSS=200V RDS(ON)@VGS=10V 6 Qg@VDD=160V, VGS=10V 4 2 0 -MOS V MACH MACHII Generation -MOS V Currently Well-established as High Voltage Power MOSFETs in the Marketplace -MOS V MACH Series Achieving Faster Switching Speed by Improving - Toshiba
Original
Abstract: compact and thin, and suitable for various items of portable electronic equipment. Applica- q Lithium-ion secondary battery protection circuits tions q Notebook PCs q Portable electronic equipment Applica- q Portable phones tions q Notebook PCs q Portable electronic equipment TFP (Thin Flat , . Low-voltage driving is possible because of ultralow ON-resistance. Applica- q DC-DC converters tions q PDP drivers q Motor drivers Applica- q DC-DC converters tions q Motor drives q Solenoids and lamp drives Toshiba
Original

K2862

Abstract: 2SK2862 TMP88CP38A TMP88CP38B TMP88CP34 32 K TMP88CM38A TMP88CM38B 64 K 60 K Q F P OSD , 060106_Q 021023_C 060111_J RoHS RoHS 060919
Toshiba
Original
K2862

k2862

Abstract: 2SK2862 -MOSV -MOSIII *: only SMD version available N EW PW-Mold2 Part Number 2SJ681(Q) 2SJ680(Q) 2SK4017(Q) 2SK4018(Q) 2SK4019(Q) 2SK4020(Q) 2SK4021(Q) 2SK4023(Q) 2SK4026(Q) 2SK4002(Q) 2SK4003(Q
Toshiba
Original

k2862

Abstract: 2SK2862 source s Structure of Toshiba Power MOSFETs q -MOS Toshiba Power MOSFETs use the double-diffusion , Structure Source P Gate n+ n+ P nn+ Drain q U-MOS Higher channel density is , items of portable electronic devices. Applica- q Lithium-ion secondary battery protection circuits tions q Notebook PCs q Portable electronic devices Applica- q Portable phones tions q Notebook PCs q Portable electronic devises TFP (Thin Flat Package) Series TO-220SIS Series VDSS = 450 to
Toshiba
Original
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