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Part Manufacturer Description Last Check Distributor Ordering
2SK2608(F) Toshiba Part Number Only 9 from $2.2750 (Nov 2016) Quest Components Buy
2SK2608(STA4,F) Toshiba - 50 from $1.90 (Nov 2016) Quest Components Buy

2SK2608 Datasheet

Part Manufacturer Description PDF Type Ordering
2SK2608 Toshiba Field Effect Transistor Silicon N Channel MOS Type (Pi-MOS III)
ri

5 pages,
305.2 Kb

Scan Buy
datasheet frame
2SK2608 Toshiba Silicon N channel field effect transistor for high speed, high voltage switching applications, switching regulator applications
ri

5 pages,
279.79 Kb

Scan Buy
datasheet frame
2SK2608 Toshiba N-Channel MOSFET
ri

6 pages,
410.26 Kb

Original Buy
datasheet frame
2SK2608 Toshiba
ri

9 pages,
43.02 Kb

Original Buy
datasheet frame
2SK2608 Toshiba Power MOSFETs Cross Reference Guide
ri

67 pages,
161.9 Kb

Original Buy
datasheet frame
2SK2608 Toshiba Power MOSFET Selection Guide with Cross Reference Data
ri

45 pages,
1424.25 Kb

Original Buy
datasheet frame

2SK2608

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: 2SK2608 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSIII) 2SK2608 Switching , electrostatic-sensitive device. Please handle with caution. 1 2004-07-06 2SK2608 Electrical Characteristics (Ta , lead (Pb)-free finish. 2 2004-07-06 2SK2608 3 2004-07-06 2SK2608 4 2004-07-06 2SK2608 RG = 25 VDD = 90 V, L = 60 mH EAS = 1 B VDSS L I2 2 B VDSS - VDD 5 2004-07-06 2SK2608 RESTRICTIONS ON PRODUCT USE · The information contained herein is subject to ... Toshiba
Original
datasheet

6 pages,
410.92 Kb

toshiba transistor k2608 2sk2608 K2608 transistor k2608 2SK2608 TEXT
datasheet frame
Abstract: TOSHIBA 2SK2608 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (tt-MOSIII) 2SK2608 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS SWITCHING REGULATOR APPLICATIONS • Low , Reliability Handbook. 1996-12-01 1/5 TOSHIBA 2SK2608 ELECTRICAL CHARACTERISTICS (Ta = 25 , without notice. 1996-12-01 2/5 TOSHIBA 2SK2608 id - vds id - vds COMMON SOURCE Tc = 25 , °C 0.3 13 10 30 DRAIN CURRENT ID (A) 1996-12-01 3/5 TOSHIBA 2SK2608 20 16 12 rds(on) - te idr - ... OCR Scan
datasheet

5 pages,
305.19 Kb

2-10P1B 2SK2608 TEXT
datasheet frame
Abstract: 2SK2608 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( −MOSIII) 2SK2608 , 2SK2608 Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current Gate−source , substances in electrical and electronic equipment. 2 2009-09-29 2SK2608 3 2009-09-29 2SK2608 4 2009-09-29 2SK2608 RG = 25 VDD = 90 V, L = 60 mH 5 EAS = B VDSS 1 ⎛ ⎞ ⋅ L ⋅ I2 ⋅ ⎜ ⎟ 2 ⎝ B VDSS − VDD ⎠ 2009-09-29 2SK2608 RESTRICTIONS ON ... Toshiba
Original
datasheet

6 pages,
433.82 Kb

2SK2608 TEXT
datasheet frame
Abstract: 2SK2608 NMOS (-MOS) 2SK2608 : mm : RDS (ON) = 3.73 () : |Yfs| = 2.6 S () : IDSS = 100 A () (VDS = 720 V) : Vth = 2.04.0 V (VDS = 10 VID = 1 mA) (Ta = 25 , 90VTch = 25 ()L = 60.0mHRG = 25IAR 25IAR = 3A 3: MOS 1 2009-09-29 2SK2608 (Ta = 25 , . 4 RoHS RoHS (RoHS) 2003 1 27 (EU 2002/95/EC 2002/95/EC) 2 2009-09-29 2SK2608 3 2009-09-29 2SK2608 4 2009-09-29 2SK2608 5 2009-09-29 2SK2608 · · · ... Toshiba
Original
datasheet

6 pages,
493.8 Kb

2-10P1B 2SK2608 K2608 TEXT
datasheet frame
Abstract: TOSHIBA 2SK2608 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (tt-MOSIII) 2SK2608 HIGH , 2SK2608 ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX , Christian Era) 1998-11-12 2/5 TOSHIBA 2SK2608 id - VDS id - VDS COMMON SOURCE Te = 25°C y ^5.5 , °C 0.3 1 3 10 DRAIN CURRENT ID (A) 30 1998-11-12 3/5 TOSHIBA 2SK2608 20 16 12 RDS(ON) - Te IDR - VDS , Q„ (nC) 40 1998-11-12 4/5 TOSHIBA 2SK2608 SAFE OPERATING AREA 30 10 0.5 0.3 0.1 0.05 0.03 0.01 ... OCR Scan
datasheet

5 pages,
288.35 Kb

2SK2608 2-10P1B TEXT
datasheet frame
Abstract: 2SK2608 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSIII) 2SK2608 Switching , electrostatic-sensitive device. Please handle with caution. 1 2009-09-29 2SK2608 Electrical Characteristics , substances in electrical and electronic equipment. 2 2009-09-29 2SK2608 3 2009-09-29 2SK2608 4 2009-09-29 2SK2608 RG = 25 VDD = 90 V, L = 60 mH 5 EAS = B VDSS 1 L I2 2 B VDSS - VDD 2009-09-29 2SK2608 RESTRICTIONS ON PRODUCT USE · Toshiba ... Toshiba
Original
datasheet

6 pages,
414.91 Kb

2SK2608 equivalent 2SK2608 2-10P1B transistor k2608 K2608 TEXT
datasheet frame
Abstract: TO SHIBA TOSHIBA FIELD EFFECT TRANSISTOR 2SK2608 HIGH SPEED, HIGH VOLTAGE SWITCHING , TO SHIBA 2SK2608 ELECTRICAL CHARACTERISTICS (Ta = 25°C) CH ARAC TERISTIC Q .O SYM BO L , 1 ~ S co o C g H Q zn < 1 3 > Q H a C 1.5 > 2SK2608 rvj u» Ul TO SHIBA 2SK2608 R d s (ON) - Te IDR - VDS Z£ °o O M 5 -40 0 40 80 120 160 CASE , ) 1998 01-21 - 4/5 TO SHIBA 2SK2608 r th - t\ PULSE WIDTH tw (s) SAFE OPERATING ... OCR Scan
datasheet

5 pages,
135.41 Kb

2SK2608 TEXT
datasheet frame
Abstract: TOSHIBA 2SK2608 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (tt-MOSIII) 2SK2608 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS SWITCHING REGULATOR APPLICATIONS Low Drain-Sorce , to change without notice. 2000-02-01 1/5 TOSHIBA 2SK2608 ELECTRICAL CHARACTERISTICS (Ta = 25 , TOSHIBA 2SK2608 id - vds id - vds COMMON SOURCE Te = 25°C y 5.5 10 r C 5.25 , °C 0.3 13 10 30 DRAIN CURRENT ID (A) 2000-02-01 3/5 TOSHIBA 2SK2608 20 16 12 RDS(ON) - Te IDR - ... OCR Scan
datasheet

5 pages,
287.08 Kb

2SK2608 2-10P1B TEXT
datasheet frame
Abstract: TOSHIBA 2SK2608 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE ( tt-MOSIII) 2SK2608 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm , TOSHIBA 2SK2608 ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST , TOSHIBA 2SK2608 R d s (ON) - Te IDR - VDS u o 2 < 2i o: ; § sg o CO s Q , > > o CO C Ó c 1998 - 11-12 4/5 TOSHIBA 2SK2608 r th — tw PULSE WIDTH tw ... OCR Scan
datasheet

5 pages,
113.18 Kb

2SK2608 TEXT
datasheet frame
Abstract: 2SK2608 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSIII) 2SK2608 Switching , 2002-06-27 2SK2608 Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current , A, VGS = 0 V, dIDR / dt = 100 A / us Marking 2 2002-06-27 2SK2608 3 2002-06-27 2SK2608 4 2002-06-27 2SK2608 RG = 25 VDD = 90 V, L = 60 mH 5 E AS = 1 B VDSS æ ö × L × I2 × ç ÷ 2 è B VDSS - VDD ø 2002-06-27 2SK2608 RESTRICTIONS ON PRODUCT USE ... Toshiba
Original
datasheet

6 pages,
254.11 Kb

2SK2608 2-10P1B TEXT
datasheet frame
Abstract: TOSHIBA T O SH IB A FIELD EFFECT TRANSISTO R SILICON N C H A N N E L M O S TYPE ( tt-M O S III) 2SK2608 2SK2608 HIGH SPEED, HIGH VO LTAGE SW ITCH IN G APPLICATIO NS SW ITCH IN G REGULATOR APPLICATIO , here in is subject t o c h a n g e w it h o u t notice. 1998 11-12 - 1/5 TOSHIBA 2SK2608 , 3 ISJ Ul TOSHIBA 2SK2608 Rd s (o n ) - Te Ed IDR - VDS £ Ä !z °o 03J? g S , > o > Ed D ss J o > O tó D g g < O Ed 1998 11-12 - 4/5 TOSHIBA 2SK2608 rth - tw ... OCR Scan
datasheet

5 pages,
190.15 Kb

ED 3730 2SK2608 TEXT
datasheet frame

Archived Files

Abstract Saved from Date Saved File Size Type Download
No abstract text available
/download/20139635-946837ZC/mos_fet.xls
Toshiba 22/12/1996 44 Kb XLS mos_fet.xls
STP45NE06FP STP45NE06FP 2SK2388 2SK2388 STP5NB60FP STP5NB60FP 2SK2604 2SK2604 STW6NB80 STW6NB80 2SK2605 2SK2605 STP5NA80FI STP5NA80FI 2SK2608 STP4NA90 STP4NA90 2SK2611 2SK2611 STW7NA90 STW7NA90
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/3650-v3.htm
STMicroelectronics 25/05/2000 29.85 Kb HTM 3650-v3.htm
2SK2388 2SK2388 STP5NB60FP STP5NB60FP 2SK2604 2SK2604 STW6NB80 STW6NB80 2SK2605 2SK2605 STP5NA80FI STP5NA80FI 2SK2608 STP4NA90 STP4NA90 2SK2611 2SK2611 STW7NA90 STW7NA90 2SK2662 2SK2662
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/3650.htm
STMicroelectronics 20/10/2000 31.22 Kb HTM 3650.htm
STP45NE06FP STP45NE06FP 2SK2388 2SK2388 STP5NB60FP STP5NB60FP 2SK2604 2SK2604 STW6NB80 STW6NB80 2SK2605 2SK2605 STP5NA80FI STP5NA80FI 2SK2608 STP4NA90 STP4NA90 2SK2611 2SK2611 STW7NA90 STW7NA90
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/3650-v1.htm
STMicroelectronics 02/04/1999 89.26 Kb HTM 3650-v1.htm
STP45NE06FP STP45NE06FP 2SK2388 2SK2388 STP5NB60FP STP5NB60FP 2SK2604 2SK2604 STW6NB80 STW6NB80 2SK2605 2SK2605 STP5NA80FI STP5NA80FI 2SK2608 STP4NA90 STP4NA90 2SK2611 2SK2611 STW7NA90 STW7NA90
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/3650-v2.htm
STMicroelectronics 14/06/1999 75.89 Kb HTM 3650-v2.htm
No abstract text available
/datasheets/files/stmicroelectronics/stonline/db/xref-v4.txt
STMicroelectronics 31/01/2001 1362.78 Kb TXT xref-v4.txt
No abstract text available
/datasheets/files/stmicroelectronics/stonline/db/xref-v1.txt
STMicroelectronics 20/10/2000 1859.39 Kb TXT xref-v1.txt
No abstract text available
/datasheets/files/stmicroelectronics/stonline/db/xref-v3.txt
STMicroelectronics 20/10/2000 1842.28 Kb TXT xref-v3.txt

Infineon (Siemens) Cross Reference Results

Infineon (Siemens) Part Status Industry Part Manufacturer Description
IPP90R1K2C3 Buy 2SK2608 Buy Toshiba N-Channel MOSFETs (500V...900V)

STMicroelectronics Cross Reference Results

STMicroelectronics Part Industry Part Manufacturer Type Description
STP3NB80 Buy 2SK2608 Buy Toshiba Replacement N-CHANNEL 800V - 4.6 OMH - 2.6A - TO-220/TO-220FP POWERMESH MOSFET - POWER MOSFETs
STP3NB90 Buy 2SK2608 Buy Toshiba Replacement Power MOSFETs - Very High Voltage

Misc. Cross Reference Results

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