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2SK2608 Datasheet

Part Manufacturer Description PDF Type
2SK2608 Toshiba N-Channel MOSFET Original
2SK2608 Toshiba Original
2SK2608 Toshiba Power MOSFETs Cross Reference Guide Original
2SK2608 Toshiba Power MOSFET Selection Guide with Cross Reference Data Original
2SK2608 Toshiba Field Effect Transistor Silicon N Channel MOS Type (Pi-MOS III) Scan
2SK2608 Toshiba Silicon N channel field effect transistor for high speed, high voltage switching applications, switching regulator applications Scan

2SK2608

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: 2SK2608 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSIII) 2SK2608 Switching , electrostatic-sensitive device. Please handle with caution. 1 2004-07-06 2SK2608 Electrical Characteristics (Ta , lead (Pb)-free finish. 2 2004-07-06 2SK2608 3 2004-07-06 2SK2608 4 2004-07-06 2SK2608 RG = 25 VDD = 90 V, L = 60 mH EAS = 1 B VDSS L I2 2 B VDSS - VDD 5 2004-07-06 2SK2608 RESTRICTIONS ON PRODUCT USE · The information contained herein is subject to Toshiba
Original
transistor k2608 K2608 toshiba transistor k2608 SC-46 2-10P1B
Abstract: TOSHIBA 2SK2608 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (tt-MOSIII) 2SK2608 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS SWITCHING REGULATOR APPLICATIONS â'¢ Low , Reliability Handbook. 1996-12-01 1/5 TOSHIBA 2SK2608 ELECTRICAL CHARACTERISTICS (Ta = 25 , without notice. 1996-12-01 2/5 TOSHIBA 2SK2608 id - vds id - vds COMMON SOURCE Tc = 25 , °C 0.3 13 10 30 DRAIN CURRENT ID (A) 1996-12-01 3/5 TOSHIBA 2SK2608 20 16 12 rds(on) - te idr - -
OCR Scan
Abstract: 2SK2608 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( â'MOSIII) 2SK2608 , 2SK2608 Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current Gateâ'source , substances in electrical and electronic equipment. 2 2009-09-29 2SK2608 3 2009-09-29 2SK2608 4 2009-09-29 2SK2608 RG = 25 VDD = 90 V, L = 60 mH 5 EAS = B VDSS 1 ⛠➠â' L â' I2 â' â â 2 ❠B VDSS â' VDD â  2009-09-29 2SK2608 RESTRICTIONS ON Toshiba
Original
Abstract: 2SK2608 NMOS (-MOS) 2SK2608 : mm : RDS (ON) = 3.73 () : |Yfs| = 2.6 S () : IDSS = 100 A () (VDS = 720 V) : Vth = 2.04.0 V (VDS = 10 VID = 1 mA) (Ta = 25 , 90VTch = 25 ()L = 60.0mHRG = 25IAR = 3A 3: MOS 1 2009-09-29 2SK2608 (Ta = 25 , . 4 RoHS RoHS (RoHS) 2003 1 27 (EU 2002/95/EC) 2 2009-09-29 2SK2608 3 2009-09-29 2SK2608 4 2009-09-29 2SK2608 5 2009-09-29 2SK2608 · · · Toshiba
Original
VDD400V
Abstract: TOSHIBA 2SK2608 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (tt-MOSIII) 2SK2608 HIGH , 2SK2608 ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX , Christian Era) 1998-11-12 2/5 TOSHIBA 2SK2608 id - VDS id - VDS COMMON SOURCE Te = 25°C y ^5.5 , °C 0.3 1 3 10 DRAIN CURRENT ID (A) 30 1998-11-12 3/5 TOSHIBA 2SK2608 20 16 12 RDS(ON) - Te IDR - VDS , Qâ'ž (nC) 40 1998-11-12 4/5 TOSHIBA 2SK2608 SAFE OPERATING AREA 30 10 0.5 0.3 0.1 0.05 0.03 0.01 -
OCR Scan
961001EAA2
Abstract: 2SK2608 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSIII) 2SK2608 Switching , electrostatic-sensitive device. Please handle with caution. 1 2009-09-29 2SK2608 Electrical Characteristics , substances in electrical and electronic equipment. 2 2009-09-29 2SK2608 3 2009-09-29 2SK2608 4 2009-09-29 2SK2608 RG = 25 VDD = 90 V, L = 60 mH 5 EAS = B VDSS 1 L I2 2 B VDSS - VDD 2009-09-29 2SK2608 RESTRICTIONS ON PRODUCT USE · Toshiba Toshiba
Original
2SK2608 equivalent
Abstract: TO SHIBA TOSHIBA FIELD EFFECT TRANSISTOR 2SK2608 HIGH SPEED, HIGH VOLTAGE SWITCHING , TO SHIBA 2SK2608 ELECTRICAL CHARACTERISTICS (Ta = 25°C) CH ARAC TERISTIC Q .O SYM BO L , 1 ~ S co o C g H Q zn < 1 3 > Q H a C 1.5 > 2SK2608 rvj u» Ul TO SHIBA 2SK2608 R d s (ON) - Te IDR - VDS Z£ °o O M 5 -40 0 40 80 120 160 CASE , ) 1998 01-21 - 4/5 TO SHIBA 2SK2608 r th - t\ PULSE WIDTH tw (s) SAFE OPERATING -
OCR Scan
2SK26Q8
Abstract: TOSHIBA 2SK2608 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (tt-MOSIII) 2SK2608 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS SWITCHING REGULATOR APPLICATIONS Low Drain-Sorce , to change without notice. 2000-02-01 1/5 TOSHIBA 2SK2608 ELECTRICAL CHARACTERISTICS (Ta = 25 , TOSHIBA 2SK2608 id - vds id - vds COMMON SOURCE Te = 25°C y 5.5 10 r C 5.25 , °C 0.3 13 10 30 DRAIN CURRENT ID (A) 2000-02-01 3/5 TOSHIBA 2SK2608 20 16 12 RDS(ON) - Te IDR - -
OCR Scan
Abstract: TOSHIBA 2SK2608 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE ( tt-MOSIII) 2SK2608 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm , TOSHIBA 2SK2608 ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST , TOSHIBA 2SK2608 R d s (ON) - Te IDR - VDS u o 2 < 2i o: ; § sg o CO s Q , > > o CO C Ã" c 1998 - 11-12 4/5 TOSHIBA 2SK2608 r th â'" tw PULSE WIDTH tw -
OCR Scan
Abstract: 2SK2608 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSIII) 2SK2608 Switching , 2002-06-27 2SK2608 Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current , A, VGS = 0 V, dIDR / dt = 100 A / us Marking 2 2002-06-27 2SK2608 3 2002-06-27 2SK2608 4 2002-06-27 2SK2608 RG = 25 VDD = 90 V, L = 60 mH 5 E AS = 1 B VDSS æ ö × L × I2 × ç ÷ 2 è B VDSS - VDD ø 2002-06-27 2SK2608 RESTRICTIONS ON PRODUCT USE Toshiba
Original
Abstract: TOSHIBA T O SH IB A FIELD EFFECT TRANSISTO R SILICON N C H A N N E L M O S TYPE ( tt-M O S III) 2SK2608 2SK2608 HIGH SPEED, HIGH VO LTAGE SW ITCH IN G APPLICATIO NS SW ITCH IN G REGULATOR APPLICATIO , here in is subject t o c h a n g e w it h o u t notice. 1998 11-12 - 1/5 TOSHIBA 2SK2608 , 3 ISJ Ul TOSHIBA 2SK2608 Rd s (o n ) - Te Ed IDR - VDS £ Ä !z °o 03J? g S , > o > Ed D ss J o > O tó D g g < O Ed 1998 11-12 - 4/5 TOSHIBA 2SK2608 rth - tw -
OCR Scan
ED 3730
Abstract: 2SK2608 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSIII) 2SK2608 Switching , 2002-06-27 2SK2608 Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current , A, VGS = 0 V, dIDR / dt = 100 A / us Marking 2 2002-06-27 2SK2608 3 2002-06-27 2SK2608 4 2002-06-27 2SK2608 RG = 25 VDD = 90 V, L = 60 mH 5 E AS = 1 B VDSS L I2 2 B VDSS - VDD 2002-06-27 2SK2608 RESTRICTIONS ON PRODUCT USE 000707EAA Toshiba
Original
dr-3 Equivalent to 2SK2608
Abstract: 2SK2608 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSIII) 2SK2608 Switching Regulator Applications Unit: mm Low drain-source ON resistance : RDS (ON) = 3.73 (typ.) High , electrostatic-sensitive device. Please handle with caution. 1 2006-11-10 2SK2608 Electrical Characteristics , finish. 2 2006-11-10 2SK2608 3 2006-11-10 2SK2608 4 2006-11-10 2SK2608 , 2006-11-10 2SK2608 RESTRICTIONS ON PRODUCT USE 20070701-EN · The information contained herein is Toshiba
Original
Abstract: 2SK2608 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSIII) 2SK2608 Switching Regulator Applications z Low drain-source ON resistance z High forward transfer admittance z Low leakage , device. Please handle with caution. 1 2006-11-10 2SK2608 Electrical Characteristics (Ta = 25 , 2006-11-10 2SK2608 3 2006-11-10 2SK2608 4 2006-11-10 2SK2608 RG = 25 VDD = 90 V, L = 60 mH EAS = 1 B VDSS L I2 2 B VDSS - VDD 5 2006-11-10 2SK2608 Toshiba
Original
Abstract: TO SHIBA TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE ( tt-MOSIII) 2SK2608 2SK2608 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS SWITCHING REGULATOR APPLICATIONS INDUSTRIAL , Reliability Handbook. 1996 12-01 - 1/5 TO SHIBA 2SK2608 ELECTRICAL CHARACTERISTICS (Ta = 25 , TO SHIBA 2SK2608 id < - vds < id - vds O H 2 £ 3 PÍ £ O S á 4 8 12 16 , SHIBA 2SK2608 R d s con ) - Te iDR - v d s C d Ü Z i °o Piß o 00 1 Q pí Ä h» -80 -4 -
OCR Scan
961001EA
Abstract: 2SK790 2SK2698 2SK385 2SK2698 2SK791 2SK2608 2SK386 2SK2698 2SK792 2SK2608 , 2SK2603 2SK2150 2SK2698 2SK1601 2SK2608 2SK2222 2SK2604 2SK1602 2SK2603 2SK2236 -
Original
2SK794 2SK1377 2SK2056 2SK1603 2SK2352 2SK2402 2SK537 2SK1723 2SK1213 2SK2235 2SK2057 2SK3462 2SK2837 2SK2741 2SK2231
Abstract: 2SK2698 A 2SK2608 A 2SK2608 A 2SK2604 A 2SK2610 A 2SK2233 A 2SK2466 B 2SK2967 A 2SK2385 B , Toshiba Note Replacement 2SK2542 A 2SK2603 A 2SK2608 A 2SK2603 B 2SK2718 A 2 2SK1768 , 2SK2607 800 2SK2608 900 2SK2610 900 2SK2611 900 2SK2613 1000 2SK2614 50 2SK2615 60 2SK2661 500 Toshiba
Original
2SJ239 transistor 2SK1603 2SK2146 2SK2351 MOSFET 2sk1357 transistor 2sk1213 2sk1603 datasheet 2SJ147 2SJ183 2SJ200 2SJ201 2SJ224 2SJ238
Abstract: 2SK2605 2SK2884 2SK2604 2SK2746 2SK2606 2SK2607 2SK3301 2SK2845 2SK2733 2SK2718 2SK2608 2SK2700 , 900 3 4.3 OK 2SK2608 DP0540004_01 15/16 The information contained herein is subject to Toshiba
Original
MOSFET TOSHIBA 2SK2917 2sK2750 equivalent 2sk2997 2SK3759 2SJ618 2sk3067 2SK3310 2SK3126
Abstract: 2SK2544 2SK2608 DP0540007_01 7 /9 TO-220AB New series Switching Performance Comparison Toshiba
Original
2SK2543 2SK3561 2SK3562 equivalent 2SK3566 2SK3561 equivalent to220sis 2SK3568 equivalent
Abstract: -MOS II TO-3P(N) 200 12 0.63 2SK2608 -MOS III TO-220AB 900 3 4.3 P 26 , TO-220AB 2SK2608 900 3 4.3 TO-220AB 2SK792 900 3 4.5 TO-220AB 2SK2608 900 3 4.3 TO-220AB 2SK794 900 5 2.5 TO-3P (N) 2SK2610 900 5 , 2SK1574 2SK2542 2SK527 2SK2232 2SK1601 2SK2608 2SK568 - 2SK1602 2SK2603 Toshiba
Original
2SK1349 2SK1117 2SK423 2sk1855 2SK1487 2SK1346 SC-70 2SK1830 2SK1829 2SK2825 2SK2824 2SK2035
Abstract: 2SK2605 2SK2884 2SK2604 2SK2746 2SK2606 2SK2607 2SK3301 2SK2845 2SK2733 2SK2718 2SK2608 2SK2700 , 900 3 4.3 OK 2SK2608 DP0540004_01 15/16 The information contained herein is subject to -
OCR Scan
2SK259 2SK260 HITACHI 2SK* TO-3 t7y25 100MA
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