NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Part | Manufacturer | Description | Type | Ordering |
| 2SK2608 | Toshiba | Power MOSFET Selection Guide with Cross Reference Data |
45 pages, |
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| 2SK2608 | Toshiba | N-Channel MOSFET |
6 pages, |
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| 2SK2608 | Toshiba | Silicon N channel field effect transistor for high speed, high voltage switching applications, switching regulator applications |
5 pages, |
Scan | |
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| 2SK2608 | Toshiba | Power MOSFETs Cross Reference Guide |
67 pages, |
Original | |
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| 2SK2608 | Toshiba | Field Effect Transistor Silicon N Channel MOS Type (Pi-MOS III) |
5 pages, |
Scan | |
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| 2SK2608 | Toshiba |
9 pages, |
Original | |
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| Catalog Datasheet Results | Type | Document Tags |
| Abstract: 2SK2608 NMOS (-MOS) 2SK2608 : mm : RDS (ON) = 3.73 () : |Yfs| = 2.6 S () : IDSS = 100 A () (VDS = 720 V) : Vth = 2.04.0 V (VDS = 10 VID = 1 mA) (Ta = 25 , 90VTch = 25 ()L = 60.0mHRG = 25IAR 25IAR = 3A 3: MOS 1 2009-09-29 2SK2608 (Ta = 25 , RoHS RoHS (RoHS) 2003 1 27 (EU 2002/95/EC 2002/95/EC) 2 2009-09-29 2SK2608 3 2009-09-29 2SK2608 4 2009-09-29 2SK2608 5 2009-09-29 2SK2608 · · · ... | Original |
6 pages, |
JEITA SC-46 2-10P1B 2SK2608 K2608 2SK2608 abstract |
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| Abstract: 2SK2608 NMOS (-MOS) 2SK2608 : mm : RDS (ON) = 3.73 () : |Yfs| = 2.6 S () : IDSS = 100 A () (VDS = 720 V) : Vth = 2.04.0 V (VDS = 10 VID = 1 mA) (Ta = 25 , 90VTch = 25 ()L = 60.0mHRG = 25IAR 25IAR = 3A 3: MOS 1 2009-09-29 2SK2608 (Ta = 25 , RoHS RoHS (RoHS) 2003 1 27 (EU 2002/95/EC 2002/95/EC) 2 2009-09-29 2SK2608 3 2009-09-29 2SK2608 4 2009-09-29 2SK2608 5 2009-09-29 2SK2608 · · · ... | Original |
6 pages, |
2SK2608 2-10P1B K2608 2SK2608 abstract |
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| Abstract: 2SK2608 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSIII) 2SK2608 Switching Regulator Applications Unit: mm Low drain-source ON resistance : RDS (ON) = 3.73 (typ.) High , electrostatic-sensitive device. Please handle with caution. 1 2006-11-10 2SK2608 Electrical Characteristics , finish. 2 2006-11-10 2SK2608 3 2006-11-10 2SK2608 4 2006-11-10 2SK2608 RG , 2006-11-10 2SK2608 RESTRICTIONS ON PRODUCT USE 20070701-EN 20070701-EN · The information contained herein is ... | Original |
6 pages, |
2SK2608 2-10P1B K2608 transistor k2608 2SK2608 abstract |
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| Abstract: 2SK2608 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSIII) 2SK2608 Switching , 2002-06-27 2SK2608 Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current , A, VGS = 0 V, dIDR / dt = 100 A / us Marking 2 2002-06-27 2SK2608 3 2002-06-27 2SK2608 4 2002-06-27 2SK2608 RG = 25 VDD = 90 V, L = 60 mH 5 E AS = 1 B VDSS æ ö Ã- L Ã- I2 Ã- ç ÷ 2 è B VDSS - VDD ø 2002-06-27 2SK2608 RESTRICTIONS ON PRODUCT USE ... | Original |
6 pages, |
2SK2608 2-10P1B 2SK2608 abstract |
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| Abstract: 2SK2608 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSIII) 2SK2608 Switching , 2002-06-27 2SK2608 Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current , A, VGS = 0 V, dIDR / dt = 100 A / us Marking 2 2002-06-27 2SK2608 3 2002-06-27 2SK2608 4 2002-06-27 2SK2608 RG = 25 VDD = 90 V, L = 60 mH 5 E AS = 1 B VDSS L I2 2 B VDSS - VDD 2002-06-27 2SK2608 RESTRICTIONS ON PRODUCT USE 000707EAA 000707EAA ... | Original |
6 pages, |
Equivalent to 2SK2608 dr-3 2-10P1B 2SK2608 2SK2608 equivalent 2SK2608 abstract |
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| Abstract: 2SK790 2SK790 2SK2698 2SK2698 2SK385 2SK385 2SK2698 2SK2698 2SK791 2SK791 2SK2608 2SK386 2SK386 2SK2698 2SK2698 2SK792 2SK792 2SK2608 , 2SK2603 2SK2603 2SK2150 2SK2150 2SK2698 2SK2698 2SK1601 2SK1601 2SK2608 2SK2222 2SK2222 2SK2604 2SK2604 2SK1602 2SK1602 2SK2603 2SK2603 2SK2236 2SK2236 ... | Original |
6 pages, |
2SK2236 2SJ241 2SK942 2SK794 2SK943 2sK2750 equivalent transistor 2SK2750 2SK1117 transistor 2sk1213 2SK851 2SK2352 2SJ239 2sk1603 datasheet 2SK1213 datasheet abstract |
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| Abstract: 2SK2608 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSIII) 2SK2608 Switching , electrostatic-sensitive device. Please handle with caution. 1 2009-09-29 2SK2608 Electrical Characteristics , substances in electrical and electronic equipment. 2 2009-09-29 2SK2608 3 2009-09-29 2SK2608 4 2009-09-29 2SK2608 RG = 25 VDD = 90 V, L = 60 mH 5 EAS = B VDSS 1 L I2 2 B VDSS - VDD 2009-09-29 2SK2608 RESTRICTIONS ON PRODUCT USE · Toshiba ... | Original |
6 pages, |
2SK2608 equivalent 2SK2608 2-10P1B transistor k2608 K2608 2SK2608 abstract |
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| Abstract: TOSHIBA 2SK2608 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (tt-MOSIII) 2SK2608 , 2SK2608 ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION MIN. typ. MAX. , ) -Year (Last Number of the Christian Era) 2000-02-01 2/5 TOSHIBA 2SK2608 id - vds id - vds COMMON , 0.3 13 10 30 DRAIN CURRENT ID (A) 2000-02-01 3/5 TOSHIBA 2SK2608 20 16 12 RDS(ON) - Te IDR - , / / \ 20 16 12 0 8 16 24 32 TOTAL GATE CHARGE Q„ (nC) 40 2000-02-01 4/5 TOSHIBA 2SK2608 SAFE ... | OCR Scan |
5 pages, |
2SK2608 2-10P1B 2SK2608 abstract |
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| Abstract: TOSHIBA 2SK2608 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (tt-MOSIII) 2SK2608 , 1996-12-01 1/5 TOSHIBA 2SK2608 ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST , without notice. 1996-12-01 2/5 TOSHIBA 2SK2608 id - vds id - vds COMMON SOURCE Tc = 25°C , 0.3 13 10 30 DRAIN CURRENT ID (A) 1996-12-01 3/5 TOSHIBA 2SK2608 20 16 12 rds(on) - te idr - , CHARGE Q„ (nC) 40 1996-12-01 4/5 TOSHIBA 2SK2608 SAFE OPERATING AREA 30 10 0.5 0.3 0.1 0.05 ... | OCR Scan |
5 pages, |
2-10P1B 2SK2608 2SK2608 abstract |
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| Abstract: TOSHIBA 2SK2608 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (tt-MOSIII) 2SK2608 HIGH , subject to change without notice. 1998-11-12 1/5 TOSHIBA 2SK2608 ELECTRICAL CHARACTERISTICS (Ta = 25°C , Alphabet A) -Year (Last Number of the Christian Era) 1998-11-12 2/5 TOSHIBA 2SK2608 id - VDS id - VDS , 0.3 1 3 10 DRAIN CURRENT ID (A) 30 1998-11-12 3/5 TOSHIBA 2SK2608 20 16 12 RDS(ON) - Te IDR - VDS , Q„ (nC) 40 1998-11-12 4/5 TOSHIBA 2SK2608 SAFE OPERATING AREA 30 10 0.5 0.3 0.1 0.05 0.03 0.01 ... | OCR Scan |
5 pages, |
2SK2608 2-10P1B 2SK2608 abstract |
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| Abstract | Saved from | Date Saved | File Size | Type | Download |
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| 06LFP 06LFP 06LFP 06LFP 2SK2385 2SK2385 2SK2385 2SK2385 STP45NE06FP STP45NE06FP STP45NE06FP STP45NE06FP 2SK2388 2SK2388 2SK2388 2SK2388 STP5NB60FP STP5NB60FP STP5NB60FP STP5NB60FP 2SK2604 2SK2604 2SK2604 2SK2604 STW6NB80 STW6NB80 STW6NB80 STW6NB80 2SK2605 2SK2605 2SK2605 2SK2605 STP5NA80FI STP5NA80FI STP5NA80FI STP5NA80FI 2SK2608 STP4 www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/3650-v2.htm |
STMicroelectronics | 14/06/1999 | 75.89 Kb | HTM | 3650-v2.htm |
| FP 2SK2388 2SK2388 2SK2388 2SK2388 STP5NB60FP STP5NB60FP STP5NB60FP STP5NB60FP 2SK2604 2SK2604 2SK2604 2SK2604 STW6NB80 STW6NB80 STW6NB80 STW6NB80 2SK2605 2SK2605 2SK2605 2SK2605 STP5NA80FI STP5NA80FI STP5NA80FI STP5NA80FI 2SK2608 STP4NA90 STP4NA90 STP4NA90 STP4NA90 2SK2611 2SK2611 2SK2611 2SK2611 STW7NA www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/3650-v3.htm |
STMicroelectronics | 25/05/2000 | 29.85 Kb | HTM | 3650-v3.htm |
| STP55NE06LFP STP55NE06LFP STP55NE06LFP STP55NE06LFP 2SK2385 2SK2385 2SK2385 2SK2385 STP45NE06FP STP45NE06FP STP45NE06FP STP45NE06FP 2SK2388 2SK2388 2SK2388 2SK2388 STP5NB60FP STP5NB60FP STP5NB60FP STP5NB60FP 2SK2604 2SK2604 2SK2604 2SK2604 STW6NB80 STW6NB80 STW6NB80 STW6NB80 2SK2605 2SK2605 2SK2605 2SK2605 STP5NA80FI STP5NA80FI STP5NA80FI STP5NA80FI 2SK2608 www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/3650.htm |
STMicroelectronics | 20/10/2000 | 31.22 Kb | HTM | 3650.htm |
| 06LFP 06LFP 06LFP 06LFP 2SK2385 2SK2385 2SK2385 2SK2385 STP45NE06FP STP45NE06FP STP45NE06FP STP45NE06FP 2SK2388 2SK2388 2SK2388 2SK2388 STP5NB60FP STP5NB60FP STP5NB60FP STP5NB60FP 2SK2604 2SK2604 2SK2604 2SK2604 STW6NB80 STW6NB80 STW6NB80 STW6NB80 2SK2605 2SK2605 2SK2605 2SK2605 STP5NA80FI STP5NA80FI STP5NA80FI STP5NA80FI 2SK2608 STP4 www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/3650-v1.htm |
STMicroelectronics | 02/04/1999 | 89.26 Kb | HTM | 3650-v1.htm |
| + N=4.7728 + RB=1.0000E-9 0000E-9 0000E-9 0000E-9 + GAMMA=0 + KAPPA=0) *$ .MODEL M2SK2608 NMOS( + LEVEL=3 + L=2.0000E-6 0000E-6 0000E-6 0000E-6 www.datasheetarchive.com/files/spicemodels/misc/spice_model_cd/mixed part list/spice-models-collection/jpwrmos.lib |
Spice Models | 29/07/2012 | 86.34 Kb | LIB | jpwrmos.lib |
| + N=4.7728 + RB=1.0000E-9 0000E-9 0000E-9 0000E-9 + GAMMA=0 + KAPPA=0) *$ .MODEL M2SK2608 NMOS( + LEVEL=3 + L=2.0000E-6 0000E-6 0000E-6 0000E-6 www.datasheetarchive.com/files/spicemodels/misc/jpwrmos.lib |
Spice Models | 22/09/2001 | 86.36 Kb | LIB | jpwrmos.lib |
| SCRs 257 6630 X00602MA X00602MA X00602MA X00602MA 03P2M 03P2M 03P2M 03P2M Replacement Nec SENSITIVE GATE SCR SENSITIVE GATE SCRs SCRs 257 6630 X00602MA X00602MA X00602MA X00602MA 03P4M 03P4M 03P4M 03P4M Replacement Nec SENSITIVE GATE SCR SENSITIVE GATE SCRs 5067 M24C01-RBN6 M24C01-RBN6 M24C01-RBN6 M24C01-RBN6 24AA01-I/P 24AA01-I/P 24AA01-I/P 24AA01-I/P Replacement Microchip 16K/8K/4K/2K/1K 16K/8K/4K/2K/1K 16K/8K/4K/2K/1K 16K/8K/4K/2K/1K SERIAL I 2 C BUS EEPROM 5067 M24C01-RMN6 M24C01-RMN6 M24C01-RMN6 M24C01-RMN6 24AA01-I/SN 24AA01-I/SN 24AA01-I/SN 24AA01-I/SN Replacement Microchip 16K/8K/4K/2K/1K 16K/8K/4K/2K/1K 16K/8K/4K/2K/1K 16K/8K/4K/2K/1K SERIAL I 2 C BUS EEPROM 5067 M24C01-RBN6 M24C01-RBN6 M24C01-RBN6 M24C01-RBN6 24AA01/P 24AA01/P 24AA01/P 24AA01/P Replacement Microchip 16K/8K/4K/2K/1K 16K/8K/4K/2K/1K 16K/8K/4K/2K/1K 16K/8K/4K/2K/1K SERIAL I 2 C BUS EEPROM 5067 M24C01-RMN6 M24C01-RMN6 M24C01-RMN6 M24C01-RMN6 24AA01/SN 24AA01/SN 24AA01/SN 24AA01/SN Replacement Microch www.datasheetarchive.com/files/stmicroelectronics/stonline/db/xref-v3.txt |
STMicroelectronics | 20/10/2000 | 1842.28 Kb | TXT | xref-v3.txt |
| SCRs 257 6630 X00602MA X00602MA X00602MA X00602MA 03P2M 03P2M 03P2M 03P2M Replacement NEC SENSITIVE GATE SCR SENSITIVE GATE SCRs SCRs 257 6630 X00602MA X00602MA X00602MA X00602MA 03P4M 03P4M 03P4M 03P4M Replacement NEC SENSITIVE GATE SCR SENSITIVE GATE SCRs SCRs 257 7482 P0111DA P0111DA P0111DA P0111DA 03P4MF 03P4MF 03P4MF 03P4MF Replacement NEC 0.8A SCRS SENSITIVE GATE SCRs SCRs 257 7482 P0111DA P0111DA P0111DA P0111DA 03P4MG 03P4MG 03P4MG 03P4MG Replacement NEC 0.8A SCRS SENSITIVE GATE SCRs SCRs 257 7480 X0205MA X0205MA X0205MA X0205MA 03P6MG 03P6MG 03P6MG 03P6MG Replacement NEC 1.25A SCRS SENSITIVE GATE SCRs 5067 M24C01-RBN6 M24C01-RBN6 M24C01-RBN6 M24C01-RBN6 24AA01-I/P 24AA01-I/P 24AA01-I/P 24AA01-I/P Replacement MICROCHIP 16K/8K/4K/2K/1K 16K/8K/4K/2K/1K 16K/8K/4K/2K/1K 16K/8K/4K/2K/1K SERIAL I 2 C BUS EEPROM 5067 www.datasheetarchive.com/files/stmicroelectronics/stonline/db/xref-v4.txt |
STMicroelectronics | 31/01/2001 | 1362.78 Kb | TXT | xref-v4.txt |
| SCRs 257 6630 X00602MA X00602MA X00602MA X00602MA 03P2M 03P2M 03P2M 03P2M Replacement Nec SENSITIVE GATE SCR SENSITIVE GATE SCRs SCRs 257 6630 X00602MA X00602MA X00602MA X00602MA 03P4M 03P4M 03P4M 03P4M Replacement Nec SENSITIVE GATE SCR SENSITIVE GATE SCRs 5067 M24C01-RBN6 M24C01-RBN6 M24C01-RBN6 M24C01-RBN6 24AA01-I/P 24AA01-I/P 24AA01-I/P 24AA01-I/P Replacement Microchip 16K/8K/4K/2K/1K 16K/8K/4K/2K/1K 16K/8K/4K/2K/1K 16K/8K/4K/2K/1K SERIAL I 2 C BUS EEPROM 5067 M24C01-RMN6 M24C01-RMN6 M24C01-RMN6 M24C01-RMN6 24AA01-I/SN 24AA01-I/SN 24AA01-I/SN 24AA01-I/SN Replacement Microchip 16K/8K/4K/2K/1K 16K/8K/4K/2K/1K 16K/8K/4K/2K/1K 16K/8K/4K/2K/1K SERIAL I 2 C BUS EEPROM 5067 M24C01-RBN6 M24C01-RBN6 M24C01-RBN6 M24C01-RBN6 24AA01/P 24AA01/P 24AA01/P 24AA01/P Replacement Microchip 16K/8K/4K/2K/1K 16K/8K/4K/2K/1K 16K/8K/4K/2K/1K 16K/8K/4K/2K/1K SERIAL I 2 C BUS EEPROM 5067 M24C01-RMN6 M24C01-RMN6 M24C01-RMN6 M24C01-RMN6 24AA01/SN 24AA01/SN 24AA01/SN 24AA01/SN Replacement Mi www.datasheetarchive.com/files/stmicroelectronics/stonline/db/xref-v1.txt |
STMicroelectronics | 20/10/2000 | 1859.39 Kb | TXT | xref-v1.txt |
| Fairchild Part | Orderable | Industry Part | Manufacturer | Type | Family | Description |
| FQP3N80C | FQP3N80C Buy | 2SK2608 Buy | Toshiba | Direct | Power MOSFET | 800V N-Channel Advance QFET C-Series |
| FQP4N90C | FQP4N90C Buy | 2SK2608 Buy | Toshiba | Direct | Power MOSFET | 900V N-Channel Advance QFET C-Series |
| Infineon (Siemens) Part | Status | Industry Part | Manufacturer | Description |
| IPP90R1K2C3 Buy | 2SK2608 Buy | Toshiba | N-Channel MOSFETs (500V...900V) |
| STMicroelectronics Part | Industry Part | Manufacturer | Type | Description |
| STP3NB80 Buy | 2SK2608 Buy | Toshiba | Replacement | N-CHANNEL 800V - 4.6 OMH - 2.6A - TO-220/TO-220FP POWERMESH MOSFET - POWER MOSFETs |
| STP3NB90 Buy | 2SK2608 Buy | Toshiba | Replacement | Power MOSFETs - Very High Voltage |
| Part | Similar Part | Notes |
| 2SK2608 Buy | BUK456-1000 Buy | |
| 2SK2608 Buy | STP3HNK90Z Buy | |
| 2SK2608 Buy | STP3NC90Z Buy | |
| 2SK2608 Buy | STP3NK90Z Buy | |
| 2SK2608 Buy | STP5NC90Z Buy |