NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Part | Manufacturer | Description | Type | Ordering |
| 2SK2329(S) | Hitachi Semiconductor | Power switching MOSFET |
10 pages, |
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| 2SK2329(S) | Renesas Technology / Hitachi Semiconductor | Silicon N Channel MOS FET |
8 pages, |
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| 2SK2329S | Hitachi Semiconductor | Silicon N-Channel MOS FET |
10 pages, |
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| 2SK2329S | Hitachi Semiconductor | Mosfet Guide |
1147 pages, |
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| 2SK2329S | Renesas Technology / Hitachi Semiconductor | Silicon N-Channel MOS FET |
9 pages, |
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| 2SK2329S | Renesas Technology / Hitachi Semiconductor | MOSFET, Switching; VDSS (V): 30; ID (A): 10; Pch : 20; RDS (ON) typ. (ohm) @10V: -; RDS (ON) typ. (ohm) @4V[4.5V]: 0.03; RDS (ON) typ. (ohm) @2.5V: 0.04; Ciss (pF) typ: 1250; toff ( us) typ: 0.225; Package: DPAK (S) |
8 pages, |
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| 2SK2329S | Renesas Technology / Hitachi Semiconductor | SMD, High Speed Power Amplifier, 30V 10A 20W, MOS-FET N-Channel enhanced |
14 pages, |
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| Catalog Datasheet Results | Type | Document Tags |
| Abstract: IC MOSFET SMD Type Silicon N-Channel MOSFET 2SK2329S TO-252 Features Low on-resistance High speed switching +0.15 1.50-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 2.3 +0.1 0.60-0.1 3.80 +0.15 5.55-0.15 +0.1 0.80-0.1 0.127 max +0.25 2.65-0.1 Suitable for Switching regulator, DC-DC converter +0.28 1.50-0.1 +0.2 9.70-0.2 2.5 V gate drive device can be driven from 3 V source +0.15 0.50-0.15 Low drive current ... | Original |
1 pages, |
2SK2329S 2SK2329S abstract |
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| Abstract: 2SK2329 2SK2329 L , 2SK2329 2SK2329 S Silicon N Channel MOS FET Application DPAK-2 High speed power switching 4 4 Features 12 · · · · Low onresistance High speed switching Low drive current 2.5 V gate drive device can be driven from 3 V source · Suitable for Switching regulator, DC DC converter 3 2, 4 12 3 1 1. 2. 3. 4. 3 Gate Drain Source Drain Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit - ... | Original |
7 pages, |
2SK2329 2SK23 2SK2329 abstract |
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| Abstract: 2SK2329 2SK2329(L), 2SK2329 2SK2329(S) Silicon N-Channel MOS FET November 1996 Application High speed power switching Features · · · · · Low on-resistance High speed switching Low drive current 2.5 V gate drive device can be driven from 3 V source Suitable for Switching regulator, DC-DC converter Outline DPAK-2 4 4 1 1 2 3 2 3 D 1. Gate 2. Drain 3. Source G 4. Drain S 2SK2329 2SK2329(L), 2SK2329 2SK2329(S) Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings ... | Original |
9 pages, |
2SK2329 2SK2329 abstract |
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| Abstract: 2SK2329 2SK2329(L), 2SK2329 2SK2329(S) Silicon N-Channel MOS FET Application High speed power switching Features · · · · · Low on-resistance High speed switching Low drive current 2.5 V gate drive device can be driven from 3 V source Suitable for Switching regulator, DC-DC converter Outline DPAK-2 4 4 1 1 2 3 2 3 D 1. Gate 2. Drain 3. Source 4. Drain G S 2SK2329 2SK2329(L), 2SK2329 2SK2329(S) Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drai ... | Original |
10 pages, |
2SK2329 2SK2329 abstract |
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| Abstract: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and ... | Original |
14 pages, |
2SK2329 datasheet abstract |
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| Abstract: 2SK2329 2SK2329(L), 2SK2329 2SK2329(S) Silicon N Channel MOS FET REJ03G1008-0200 REJ03G1008-0200 (Previous: ADE-208-1356 ADE-208-1356) Rev.2.00 Sep 07, 2005 Application High speed power switching Features · · · · · Low on-resistance High speed switching Low drive current 2.5 V gate drive device can be driven from 3 V source Suitable for Switching regulator, DC-DC converter Outline RENESAS Package code: PRSS0004ZD-B PRSS0004ZD-B (Package name: DPAK(L)-(2) RENESAS Package code: PRSS0004ZD-C PRSS0004ZD-C (Package name: DPAK(S) 4 ... | Original |
8 pages, |
PRSS0004ZD-C PRSS0004ZD-B 2SK3239STL-E 2SK3239L-E 2SK2329 REJ03G1008-0200 ADE-208-1356 2SK2329 abstract |
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| Abstract: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Renesas Electronics website: http://www.renesas.com April 1st, 2010 Renesas Electronics Corporation ... | Original |
10 pages, |
PRSS0004ZD-C PRSS0004ZD-B 2SK3239STL-E 2SK3239L-E 2SK2329 datasheet abstract |
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| Abstract: 2sk135 2SK135 audio amplifier 2sj150 CONTENTS s Index. 4 s General Information. 11 Section 1 Lineup by Application. 13 1.1 Power Supply Use . ... | Original |
1147 pages, |
specification of 2SK1058 2sk1317 2SK318 k1832 2SK1197 2sk1058 2SJ162 2sk1404 2SK1778 2SK2225 equivalent 2sk216 equivalent 2sk135 application 2SK2416 2sk135 application note 2sk135 audio application datasheet abstract |
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| Abstract: CONTENTS Index . 5 General Information . 9 Section 1 Lineup by Application . 11 1.1 Power Supply Use. ... | Original |
2468 pages, |
hitec servo 422 2sk1058 2SJ162 2SK215 equivalent 2SK1919 DII 539 fuel injector test 2sk 100a transistor 2sk zm 1550 TRANSISTOR REPLACEMENT ECG 2sk317 K.50 E Type siemens relay flyback PCB layout datasheet abstract |
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| Abstract: zu 103 ma marking code g2s converter S301-6 CONTENTS Index . 5 General Information . 9 Section 1 Lineup by Application . 11 1.1 Power Supply Use. ... | Original |
2317 pages, |
2sk1058 equivalent 2SK129 2SK215 equivalent ADE-40 crt vertical deflection circuit specification of 2SK1058 2SJ318 2SK1153 equivalent 2sk1058 2SJ162 2SK series datasheet abstract |
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| Part | Similar Part | Notes |