ENN5058 2SK2317 2083B 2092B 73099TH /42895MO TA-0137 - Datasheet Archive

 

N-Channel Silicon MOSFET 2SK2317 Ultrahigh-Speed Switching Applications Features Package Dimensions · Low ON resistance.

 

Ordering number:ENN5058 ENN5058 N-Channel Silicon MOSFET 2SK2317 2SK2317 Ultrahigh-Speed Switching Applications Features Package Dimensions · Low ON resistance. · Ultrahigh-speed switching. · 2.5V drive. unit:mm 2083B 2083B [2SK2317 2SK2317] 2.3 1.5 6.5 5.0 0.5 7.0 5.5 4 1.2 7.5 0.8 1.6 0.85 0.7 0.6 0.5 1 2 1 : Gate 2 : Drain 3 : Source SANYO : TP 3 2.3 2.3 unit:mm 2092B 2092B [2SK2317 2SK2317] 6.5 5.0 4 2.3 0.5 2.3 2 2.5 1 0.6 0.8 0.85 1.2 7.0 5.5 1.5 0.5 3 1.2 0 to 0.2 2.3 1 : Gate 2 : Drain 3 : Source SANYO : TP-FA Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 73099TH 73099TH (KT)/42895MO /42895MO (KOTO) TA-0137 TA-0137 No.5058­1/4 2SK2317 2SK2317 Specifications Absolute Maximum Ratings at Ta = 25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Symbol Conditions Ratings VDSS VGSS Unit 20 V ±10 V 4 A ID IDP PW10µs, duty cycle1% 16 A 1 W Allowable Power Dissipation PD 20 W Channel Temperature Tch 150 °C Storage Temperature Tstg ­55 to +150 °C Tc=25°C Electrical Characteristics at Ta = 25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Symbol Conditions V(BR)DSS IDSS ID=1mA, VGS=0 VDS=16V, VGS=0 IGSS VGS(off) | yfs | typ max VGS=±8V, VDS=0 RDS(on) Ratings min VDS=10V, ID=1mA VDS=10V, ID=2A 20 Unit V 100 µA ±10 µA 1.5 V 65 85 m 85 125 m 0.5 3.5 5 S RDS(on) ID=2A, VGS=4V ID=1A, VGS=2.5V Input Capacitance Ciss VDS=10V, f=1MHz 400 pF Output Capacitance Coss 300 pF Reverse Transfer Capacitance Crss VDS=10V, f=1MHz VDS=10V, f=1MHz 160 pF Turn-ON Delay Time td(on) See specified Test Circuit 20 ns tr See specified Test Circuit 70 ns td(off) See specified Test Circuit 100 ns tf See specified Test Circuit 120 IS=4A, VGS=0 1.0 Static Drain-to-Source ON-State Resistance Rise Time Turn-OFF Delay Time Fall Time Diode Forward Voltage VSD ns 1.2 V Switching Time Test Circuit No.5058­2/4 2SK2317 2SK2317 No.5058­3/4 2SK2317 2SK2317 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of July, 1999. Specifications and information herein are subject to change without notice. PS No.5058­4/4