2SK2275 MP-45F TC-2510 TEI-1202 IEI-1209 IEI-1207 IEI-1213 MEI-1202 MF-1134

MOS FIELD EFFECT TRANSISTOR 2SK2275 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2275

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2275 2SK2275 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2275 2SK2275 is N-channel Power MOS Field Effect Transis- (in millimeters) tor designed for high voltage switching applications. 10.0 ± 0.3 FEATURES · 3.2 ± 0.2 4.5 ± 0.2 2.7 ± 0.2 Low On-state Resistance 1 2 3 4 ± 0.2 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Drain to Source Voltage VDSS 900 V Gate to Source Voltage VGSS ±30 V Drain Current (DC) ID (DC) ±3.5 A Drain Current (pulse) ID (pulse)* ±14 A 0.7 ± 0.1 2.54 TYP. 12.0 ± 0.2 Ciss = 1 000 pF TYP. High Avalanche Capability Ratings 13.5 MIN. LOW Ciss 3 ± 0.1 · · 15.0 ± 0.3 RDS(on) = 2.8 MAX. (VGS = 10 V, ID = 2.0 A) Total Power Dissipation (TC = 25 °C) PT1 35 W Total Power Dissipation (Ta = 25 °C) PT2 2.0 1.3 ± 0.2 1.5 ± 0.2 2.54 TYP. 0.65 ± 0.1 2.5 ± 0.1 W Storage Temperature Tstg 55 to +150 °C Channel Temperature Tch 150 °C Single Avalanche Current IAS* 3.5 A Single Avalanche Energy EAS* 22 mJ *PW 10 µs, Duty Cycle 1% 1. Gate 2. Drain 3. Source 1 2 3 MP-45F MP-45F (ISOLATED TO-220) *Starting Tch = 25 °C, RG = 25 , VGS = 20 V 0 Drain (D) The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device is actually used, an additional protection circuit is externally Body diode Gate (G) required if a voltage exceeding the rated voltage may be applied to this device. Document No. TC-2510 TC-2510 (O.D. No. TC8069) Date Published February 1995 P Printed in Japan Source (S) © 1995 2SK2275 2SK2275 ELECTRICAL CHARACTERISTICS (TA = 25 °C) CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS 2.2 2.8 VGS = 10 V, ID = 2 A 3.5 V VDS = 10 V, ID = 1 mA S VDS = 20 V, ID = 2 A Drain to Source On-state Resistance RDS(on) Gate to Source Cutoff Voltage VGS(off) 2.5 Forward Transfer Admittance yfs 1.0 Drain Leakage Current IDSS 100 µA VDS = 900 V, VGS = 0 Gate to Source Leakage Current IGSS ±10 µA VGS = ±30 V, VDS = 0 Input Capacitance Ciss 1 000 pF VDS = 10 V Output Capacitance Coss 170 pF VGS = 0 Reverse Transfer Capacitance Crss 60 pF f = 1 MHz Turn-On Delay Time td(on) 20 ns VGS = 10 V Rise Time tr 20 ns VDD = 150 V Turn-Off Delay Time td(off) 90 ns ID = 2 A, RG = 10 Fall Time tf 20 ns RL = 75 Total Gate Charge QG 42 nC VGS = 10 V Gate to Source Charge QGS 6.0 nC ID = 3.5 A Gate to Drain Charge QGD 20 nC VDD = 450 V Diode Forward Voltage VF(S-D) 0.9 V Reverse Recovery Time trr 480 ns 1F = 3.5 A Reverse Recovery Charge Qrr 2.5 µC di/dt = 50 A/µs Test Circuit 1: Avalanche Capability D.U.T. RG = 25 PG. Test Circuit 2: Switching Time D.U.T. L 50 VGS = 20 0 V IF = 3.5 A, VGS = 0 RL RG RG = 10 PG. VDD VDD VGS VGS Wave Form 0 VGS (on) 10 % ID 90 % 90 % 90 % VGS 0 BVDSS IAS VDS ID VDD Starting Tch = 1 µs Duty Cycle 1% ID Wave Form ID 0 10 % 10 % td (on) tr ton td (off) tf toff Test Circuit 3: Gate Charge D.U.T. IG = 2 mA PG. 50 RL VDD The application circuits and their parameters are for references only and are not intended for use in actual design-in's. 2 2SK2275 2SK2275 TYPICAL CHARACTERISTICS (TA = 25 °C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 50 PT - Total Power Dissipation - W dT - Percentage of Rated Power - % 100 80 60 40 20 0 20 40 60 80 40 30 20 10 0 100 120 140 160 40 20 60 80 100 120 140 160 TC - Case Temperature - °C TC - Case Temperature - °C FORWARD BIAS SAFE OPERATING AREA DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 6 10 0 tV (a ed ID (DC) 1 it n) S 1 Lim (o Po iss TC = 25 °C Single Pulse s s m s m s 0m rD s ip 0.1 10 10 we RD 10 ID - Drain Current - A GS at io n VGS = 10 V Pulsed 5 = µ 0 =1 10 PW ID (pulse) V) µ ID - Drain Current - A 100 4 3 2 1 Lim ite d 10 1.0 100 1 000 0 5 10 15 20 25 VDS - Drain to Source Voltage - V VDS - Drain to Source Voltage - V TRANSFER CHARACTERISTICS 10 VDS = 10 V Pulsed TA = 25 °C ID - Drain Current - A 25 °C 75 °C 125 °C 1 0.1 0 2 4 6 8 10 12 14 VGS - Gate to Source Voltage - V 3 2SK2275 2SK2275 TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH rth (t) - Transient Thermal Resistance - 1 000 Rth (ch-a) = 62.5 (°C/W) 100 10 Rth (ch-c) = 3.125 (°C/W) 1.0 0.1 0.01 TC = 25 °C Single Pulse 0.001 10 µ 100 µ 1m 10 m 100 m 1 10 100 1 000 30 VDS = 20 V Pulsed 10 3.0 125 °C 75 °C 25 °C Ta = 25 °C 1.0 0.3 0.1 10 1 20 RDS (on) - Drain to Source On-State Resistance - ID - Drain Current - A 4 DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 5 VGS = 10 V Pulsed 4 3 2 1 0 0.1 1 10 ID - Drain Current - A 100 RDS (on) - Drain to Source On-State Resistance - FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT VGS (off) - Gate to Source Cutoff Voltage - V by fs - Forward Transfer Admittance - S PW - Pulse Width - s DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 6 Pulsed 5 4 3 ID = 6 A 3A 1.2 A 2 1 0 5 10 15 20 25 VGS - Gate to Source Voltage - V GATE TO SOURCE CUTOFF VOLTAGE vs. CHANNEL TEMPERATURE 3.5 3.0 2.5 2.0 1.5 1.0 0.5 V DS = 10 V 0 ID = 1mA 50 25 0 25 50 75 100 125 150 Tch - Channel Temperature - °C DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 8.0 VGS = 10 V 7.0 ID = 3.0 A Pulsed 6.0 SOURCE TO DRAIN DIODE FORWARD VOLTAGE 20 Pulsed ISD - Diode Forward Current - A RDS (on) - Drain to Source On-State Resistance - W 2SK2275 2SK2275 5.0 4.0 3.0 2.0 1.0 0 50 10 1 VGS = 0 VGS = 10 V 0.1 25 0 25 50 75 100 125 150 0 CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE td (on), tr, td (off), tf - Swiching Time - ns Ciss, Coss, Crss - Capacitance - pF Ciss 100 Coss Crss 10 10 1 100 1 000 100 8 VGS 6 200 4 0 VDS 0 10 2 20 30 Qg - Gate Charge - nC 40 1.4 td (off) tr tf td (on) 10 3 0.1 1 50 0 3 000 trr - Reverse Recovery Time - ns 10 300 100 1.2 VGS = 10 V0 RG = 10 VDD = 150 V 10 REVERSE RECOVERY TIME vs. REVERSE DRAIN CURRENT VGS - Gate to Source Voltage - V VDS - Drain to Source Voltage - V ID = 3.5 A 400 1.0 ID - Drain Current - A DYNAMIC INPUT/OUTPUT CHARACTERISTICS 12 600 VDD = 450 V 300 V 150 V 0.8 200 VDS - Drain to Source Voltage - v 500 0.6 SWITCHING CHARACTERISTICS f = 1 MHz VGS = 0 1 000 0.4 VSD - Source to Drain Voltage - V Tch - Channel Temperature - °C 10 000 0.2 di/dt = 50 A/ µ s VGS = 0 1 000 100 30 0.1 1 10 30 Diode Forward Current - A 5 2SK2275 2SK2275 SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD SINGLE AVALANCHE ENERGY vs. STARTING CHANNEL TEMPERATURE IAS - Single Avalanche Current -A VDD = 150 V RG = 25 VGS = 20 V0 Starting Tch = 25 °C 10 IAS = 3.5 A EA S =2 2m J 1 0.5 100 µ 1m 10 m L - Inductive Load - H 6 100 m EAS - Single Avalanche Energy - mJ 25 50 VDD = 150 V RG = 25 VGS = 20 V0 IAS < 3.5 A = 20 22 mJ 15 10 5 0 25 50 75 100 125 150 175 Starting Tch - Starting Channel Temperature - °C 2SK2275 2SK2275 REFERENCE Document Name Document No. NEC semiconductor device reliability/quality control system. TEI-1202 TEI-1202 Quality grade on NEC semiconductor devices. IEI-1209 IEI-1209 Semiconductor device mounting technology manual. IEI-1207 IEI-1207 Semiconductor device package manual. IEI-1213 IEI-1213 Guide to quality assurance for semiconductor devices. MEI-1202 MEI-1202 Semiconductor selection guide. MF-1134 MF-1134 Power MOS FET features and application switching power supply. TEA-1034 TEA-1034 Application circuits using Power MOS FET. TEA-1035 TEA-1035 Safe operating area of Power MOS FET. TEA-1037 TEA-1037 7 2SK2275 2SK2275 [MEMO] No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices in "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact NEC Sales Representative in advance. Anti-radioactive design is not implemented in this product. M4 94.11