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2SK2247 Datasheet

Part Manufacturer Description PDF Type
2SK2247 Hitachi Semiconductor Mosfet Guide Original
2SK2247 Hitachi Semiconductor Silicon N-Channel MOS FET Original
2SK2247 Hitachi Semiconductor Silicon N Channel MOS FET Original
2SK2247 Renesas Technology Silicon N-Channel MOS FET Original
2SK2247 Renesas Technology Silicon N-Channel MOS FET Original
2SK2247 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan

2SK2247

Catalog Datasheet MFG & Type PDF Document Tags

2sk2247

Abstract: 2SK2247 Si li con N Ch a nn el MOS FET Application High speed power switching Features · , cycle < 1 0 % When using the alumina ceramic board (12.5 x 20 x 0.7mm) Marking is "QY" 1 2SK2247 , - - f = 1 MHz lD = 1 A VGs = 10 V Rl = 30 ft PW = 2^is 14 37 33 tf 2 2SK2247 , s (V) 1 2 3 Gate to Source Voltage 4 V GS (V) 5 3 2SK2247 Drain to Source , ) 4 2SK2247 Typical Capacitance vs. Drain to Source Voltage 0 E i- C T > 5 tt> 0.05
-
OCR Scan
Abstract: 2SK2247 Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power , 2SK2247 Absolute Maximum Ratings (Ta = 25 °C) Item Symbol Gate to source voltage ^G S S , 2SK2247 Electrical Characteristics (Ta = 25 °C) Item Symbol Min Typ Max Unit Test , Test HITACHI 3 2SK2247 Power vs. Temperature Derating Maximum Safe Operation Area 0.1 Am , Q Q 1 2 3 Drain to Source Voltage 4 5 V qs (V) HITACHI 4 5 2SK2247 -
OCR Scan

2SK2247

Abstract: 2SK2247 Silicon N Channel MOS FET Application UPAK High speed power switching Features , 0.7mm) Marking is "QY" 2SK2247 Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol , - * Pulse Test 2SK2247 Power vs. Temperature Derating 10 I D (A) 3 ) ot sh , ) 1.6 0 1 2 3 Gate to Source Voltage 4 5 V GS (V) 2SK2247 Pulse Test Ta = 25 °C , V DS = 10 V Pulse Test 0.2 0.5 1 2 Drain Current I D (A) 5 10 2SK2247
Hitachi Semiconductor
Original

Hitachi DSA002749

Abstract: 2SK2247 Silicon N-Channel MOS FET November 1996 Application High speed power switching , Outline UPAK 2 1 4 3 D G 1. Gate 2. Drain 3. Source 4. Drain S 2SK2247 Absolute Maximum , (12.5 × 20 × 0.7mm) 3. Marking is "QY" 2 2SK2247 Electrical Characteristics (Ta = 25°C) Item , (off) tf - - - 14 37 33 - - - ns ns ns 3 2SK2247 Power vs. Temperature , DS (V) 4 2SK2247 Drain to Source Saturation Voltage vs. Gate to Source Voltage Drain to
Hitachi
Original
Hitachi DSA002749 D-85622

DSA003640

Abstract: 2SK2247 2SK2247 Silicon N-Channel MOS FET ADE-208-1353 (Z) 1st. Edition Mar. 2001 Application High , . Drain G S 2SK2247 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit , time tf - 33 - ns PW = 2 µs Note 2 1. Pulse Test 2SK2247 Power vs , V GS (V) 3 2SK2247 Pulse Test Ta = 25 °C 0.4 0.3 Static Drain to Source on State , Current I D (A) 5 10 2SK2247 Typical Capacitance vs. Drain to Source Voltage Switching
Hitachi Semiconductor
Original
DSA003640
Abstract: 2SK2247 Silicon N-Channel MOS FET HITACHI Application High speed power switching Features , Outline UPAK o D 1. Gate 2. Drain 3. Source 4. Drain 903 2SK2247 Absolute Maximum Ratings , 37 33 Rl = 30 £J PW = 2 [iS 904 HITACHI < o 2SK2247 Power vs. Temperature , ) HITACHI 905 2SK2247 Drain to Source Saturation Voltage vs. Gate to Source Voltage Drain to Source , 906 HITACHI 2SK2247 Typical Capacitance vs. Switching Characteristics Capacitance C (pF -
OCR Scan

Hitachi DSA003751

Abstract: DSA0037514 2SK2247 Silicon N-Channel MOS FET Application High speed power switching Features · · · , Outline UPAK 3 2 1 4 D 1. Gate 2. Drain 3. Source 4. Drain G S 2SK2247 , Note 2 1. Pulse Test 2SK2247 Power vs. Temperature Derating 10 I D (A) 3 ) ot , = ­25 °C 25 °C 0 1 2 3 Gate to Source Voltage 4 5 V GS (V) 3 2SK2247 Pulse , V DS = 10 V Pulse Test 0.2 0.5 1 2 Drain Current I D (A) 5 10 2SK2247
Hitachi Semiconductor
Original
Hitachi DSA003751 DSA0037514

2SK2247

Abstract: products contained therein. 2SK2247 Silicon N-Channel MOS FET ADE-208-1353 (Z) 1st. Edition Mar , . Gate 2. Drain 3. Source 4. Drain G S 2SK2247 Absolute Maximum Ratings (Ta = 25°C) Item , time tf - 33 - ns PW = 2 µs Note 2 1. Pulse Test 2SK2247 Power vs , V GS (V) 3 2SK2247 Pulse Test Ta = 25 °C 0.4 0.3 Static Drain to Source on State , Current I D (A) 5 10 2SK2247 Typical Capacitance vs. Drain to Source Voltage Switching
Hitachi Semiconductor
Original

2SK2247

Abstract: products contained therein. 2SK2247 Silicon N-Channel MOS FET ADE-208-1353 (Z) 1st. Edition Mar , . Gate 2. Drain 3. Source 4. Drain G S 2SK2247 Absolute Maximum Ratings (Ta = 25°C) Item , time tf - 33 - ns PW = 2 µs Note 2 1. Pulse Test 2SK2247 Power vs , V GS (V) 3 2SK2247 Pulse Test Ta = 25 °C 0.4 0.3 Static Drain to Source on State , Current I D (A) 5 10 2SK2247 Typical Capacitance vs. Drain to Source Voltage Switching
Hitachi Semiconductor
Original

2SK1637

Abstract: 2SK2097 . 896
-
OCR Scan
2SK1637 2SK2097 2SK series 2SK2203 1018 636 transistor+2sk 2SK213 2SK214 2SK215 2SK216 2SK410 2SK740

transistor 2sk

Abstract: transistor sp-10 4ac14 2SJ363 2SJ450T 2SJ484 2SJ517T 2SK1334 2SK157 & T 2SK1687 2SK1698 2SK1764 2SK1772 2SK2247 2SK2315T 2SK2788
-
OCR Scan
transistor 2sk transistor sp-10 4ac14 transistor 2sk 70 2sj318 transistor 2sk 12 2sk type 2SD16 2SD1603 2SD1604 2SD1605 2SD1606 2SD1756

74ls111

Abstract: 2SA872 spice 2SK2114_15 2SK2116_17 2SK2118 2SK2144 2SK2202 2SK2203 2SK2212 2SK2225 2SK2247 2SK2315 2SK2328 2SK2329LS
Hitachi Semiconductor
Original
74ls111 2SA872 spice 74LS122 spice model 74ls221 Spice BC240 hitachi mosfet audio application note 2SB715 2SB738 2SB740 2SB831 2SC1213 2SC1344

lvc16244

Abstract: BC240 2SK2144 2SK2202 2SK2203 2SK2212 2SK2225 2SK2247 2SK2315 2SK2328 2SK2329L 2SK2373 2SK2393 2SK2408 2SK2423
Hitachi Semiconductor
Original
HA13557A lvc16244 CBT1G125 2sk3174 LV2GT14A HC32 Hitachi HAT2080R HAT2080T HAT2085R HAT2085T HAT2087R HAT2088R

2SK2225 equivalent

Abstract: 2SK1762 equivalent 6.0 4.5 5.0 T0220CFM 2SJ471 Neh UPAK 2SK1772 2SK2247 2SK2788 2SK2315 DPAK 2SK2796 2SK2869 SOP , .03l 2SJ246(0.13) 2SJ4S4 (0.16) * HAT3D04R 2SJ333(0.1) + 2SK2ra(M 4> 2SK2247(0iS) 2$J388 (0.06 , 2SJ278 2SJ450*3 2SK2247 2SK2315*3 14330 3.2 40800 2.1 60 85 70 85 105 150 190 220 775 490 180 200 365
-
OCR Scan
2SK161S 2SK2225 equivalent 2SK1762 equivalent C2373 2sk2221 equivalent 2SK1317 equivalent 2SJ182 equivalent 2SK1151 2SK1152 2SK1862 2SK1863 2SK1155 2SK1156

TO220CFM

Abstract: TO220FM 2SK1579 2SK1697 2SK1698 2SK1764 2SK1772 2SK2247 2SK2315 2SK2788 2SK2978 2SJ130(L)/(S) 2SJ181(L)/(S) 2SJ319
Hitachi Semiconductor
Original
HAT1053M TO220CFM TO220FM 2SK1835 2sk3148 2SK2096 Hitachi DSA00276 HAT1024R ADE-208-476G HAT1044M HAT2053M HAT2054M

hitachi mosfet audio

Abstract: D4L DIODE 30 1.0 0.85 0.6 30 ¡ « 2SK2247 D4 30 2.0 0.45 0.35 177 þ
Hitachi Semiconductor
Original
hitachi mosfet audio D4L DIODE 2SK2830 2SJ214LS 2SK1919LS 2sk2829 6AM11 4AK23 4AM14 4AM15 6AM12 6AM13

7054F

Abstract: BC564A 2sk2097 2sk2114 2sk2116 2sk2118 2sk2144 2sk2202 2sk2203 2sk2212 2sk2225 2sk2247 2sk2315 2sk2328 2sk2329ls
Hitachi Semiconductor
Original
7054F BC564A HA13563 AC123A HITACHI microcontroller H8 534 manual AC538 2SD755/56/56A

2SK3235

Abstract: 2SK3379 2SK1579 2SK1697 2SK1698 2SK1764 2SK1772 2SK2247 2SK2315 2SK2788 2SK2978 2SJ130(L)/(S) 2SJ181(L)/(S) 2SJ319
Hitachi Semiconductor
Original
2SK3235 2SK3379 HAT1053 2SJ517 HAT1040T 2SK3421 HAT2038R/HAT2038RJ ADE-208-666C HAT2038R HAT2038RJ

2SC 8550

Abstract: 6020v4 2SJ518 2SK1334 2SK1579 2SK1697 2SK1698 2SK1764 2SK1772 2SK2247 2SK2315 2SK2788 2SK2978 2SJ130
-
Original
2SC 8550 6020v4 6030v4 HITACHI 08122B 2SC 8050 HITACHI 08123B 2SK3390 2SA2080 2SA2081 2SC4260 2SC4261 2SC4262

2SK975 equivalent

Abstract: k2796 2SJ296 2SJ297 2SJ280 TO-220FM 2SJ293 2SJ294 2SJ295 TO-220CFM Nch UPAK 2SJ471 2SK1772 2SK2247 2SK2788 , 2SJ317*3 2SJ361*3 2SJ363 2SJ278 2 S J 4 5 0 '3 2SK2247 2S K 2315' 3 14330 3.2 40800 2.1 60 85 70 85
-
OCR Scan
2SK2728 2SK975 equivalent k2796 POWER MOS FET 2sj 2sk equivalent transistor 2sk TRANSISTOR 2SK 1180 SK1626 2SK1157 2SK1313 2SK1314 2SK1540 2SK1541 2SK1626
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