NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Part | Manufacturer | Description | Type | Ordering |
| 2SK2059(S) | Hitachi Semiconductor | Power switching MOSFET |
9 pages, |
Original |  |
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| 2SK2059(S) | Renesas Technology / Hitachi Semiconductor | Silicon N Channel MOS FET |
8 pages, |
Original | |
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| 2SK2059S | Hitachi Semiconductor | Mosfet Guide |
1147 pages, |
Original | |
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| 2SK2059S | Hitachi Semiconductor | Silicon N-Channel MOS FET |
9 pages, |
Original | |
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| 2SK2059S | N/A | Shortform Data and Cross References (Misc Datasheets) |
1 pages, |
Scan | |
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| 2SK2059S | Renesas Technology / Hitachi Semiconductor | Silicon N-Channel MOS FET |
8 pages, |
Original | |
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| 2SK2059S | Renesas Technology / Hitachi Semiconductor | SMD, High Speed Power Amplifier, 600V 3A 20W, MOS-FET N-Channel enhanced |
13 pages, |
Original | |
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| Catalog Datasheet Results | Type | Document Tags |
| Abstract: IC MOSFET SMD Type Silicon N-Channel MOSFET 2SK2059S TO-252 Features Low on-resistance +0.15 1.50-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 High speed switching Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 2.3 +0.1 0.60-0.1 3.80 +0.15 5.55-0.15 0.127 max +0.25 2.65-0.1 +0.1 0.80-0.1 +0.28 1.50-0.1 +0.2 9.70-0.2 Suitable for Switching regulator, DC - DC converter +0.15 0.50-0.15 No Secondary Breakdown 1 Gate +0.15 4.60-0.15 2 Drain 3 Source ... | Original |
1 pages, |
voltage regulator 10V smd 2SK2059S mosfet 10a 500v 2SK2059S abstract |
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| Abstract: 2SK2059STL-E Quantity 3200 pcs 3000 pcs Shipping Container Box (Sack) Taping Note: For some grades ... | Original |
10 pages, |
PRSS0004ZD-C PRSS0004ZD-A 2SK2059 datasheet abstract |
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| Abstract: 2SK2059STL-E Quantity 3200 pcs 3000 pcs Shipping Container Box (Sack) Taping Note: For some grades ... | Original |
8 pages, |
PRSS0004ZD-C PRSS0004ZD-A 2SK2059 REJ03G0993-0200 ADE-208-1341 2SK2059 abstract |
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| Abstract: 2SK2059STL-E Quantity 3200 pcs 3000 pcs Shipping Container Box (Sack) Taping Note: For some grades ... | Original |
8 pages, |
PRSS0004ZD-C PRSS0004ZD-A 2SK2059 REJ03G0993-0200 ADE-208-1341 2SK2059 abstract |
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| Abstract: 2SK2059 2SK2059 L , 2SK2059 2SK2059 S Silicon N Channel MOS FET Application DPAK-1 High speed power switching Features · · · · 4 4 12 Low onresistance High speed switching No Secondary Breakdown Suitable for Switching regulator, DC DC converter 3 2, 4 12 3 1 1. 2. 3. 4. 3 Gate Drain Source Drain Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit - ... | Original |
5 pages, |
2SK2059 2SK2059 abstract |
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| Abstract: 2SK2059 2SK2059(L), 2SK2059 2SK2059(S) Silicon N-Channel MOS FET November 1996 Application High speed power switching Features · · · · Low on-resistance High speed switching No Secondary Breakdown Suitable for Switching regulator, DC - DC converter Outline DPAK-1 4 4 1 1 2 3 2 3 D 1. Gate 2. Drain 3. Source 4. Drain G S 2SK2059 2SK2059(L), 2SK2059 2SK2059(S) Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage VDSS 600 ... | Original |
8 pages, |
2SK2059 2SK2059 abstract |
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| Abstract: 2SK2059 2SK2059(L), 2SK2059 2SK2059(S) Silicon N-Channel MOS FET ADE-208-1341 ADE-208-1341 (Z) 1st. Edition Mar. 2001 Application High speed power switching Features · · · · Low on-resistance High speed switching No Secondary Breakdown Suitable for Switching regulator, DC - DC converter Outline DPAK-1 4 4 1 1 2 3 2 3 D 1. Gate 2. Drain 3. Source 4. Drain G S 2SK2059 2SK2059(L), 2SK2059 2SK2059(S) Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to sou ... | Original |
11 pages, |
2SK2059 ADE-208-1341 2SK2059 abstract |
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| Abstract: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and ... | Original |
13 pages, |
2SK2059 datasheet abstract |
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| Abstract: 2SK2059 2SK2059(L), 2SK2059 2SK2059(S) Silicon N-Channel MOS FET Application High speed power switching Features · · · · Low on-resistance High speed switching No Secondary Breakdown Suitable for Switching regulator, DC - DC converter Outline DPAK-1 4 4 1 1 2 3 2 3 D 1. Gate 2. Drain 3. Source 4. Drain G S 2SK2059 2SK2059(L), 2SK2059 2SK2059(S) Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage VDSS 600 V Gate to ... | Original |
9 pages, |
2SK2059 2SK2059 abstract |
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| Abstract: 2sk135 2SK135 audio amplifier 2sj150 CONTENTS s Index. 4 s General Information. 11 Section 1 Lineup by Application. 13 1.1 Power Supply Use . ... | Original |
1147 pages, |
automotive relay 2SK1197 2sk1404 2sk1317 specification of 2SK1058 2SK318 2sk1058 2SJ162 k1832 2SK1778 2sk216 equivalent 2sk135 application 2sk135 audio application 2sk135 application note 2SK2416 datasheet abstract |
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| Fairchild Part | Orderable | Industry Part | Manufacturer | Type | Family | Description |
| FCD4N60 | FCD4N60TM Buy | 2SK2059S Buy | Hitachi | Close | Power MOSFET | 600V N-Channel MOSFET SuperFET |
| FCD5N60 | FCD5N60TM Buy | 2SK2059S Buy | Hitachi | Close | Power MOSFET | 600V N-Channel MOSFET |
| FCD7N60 | FCD7N60TM Buy | 2SK2059S Buy | Hitachi | Close | Power MOSFET | 600V N-Channel MOSFET |
| FCD9N60NTM | FCD9N60NTM Buy | 2SK2059S Buy | Hitachi | Close | Power MOSFET | 600V N-Channel MOSFET, SupreMOS |
| FDD3N40 | FDD3N40TM Buy | 2SK2059S Buy | Hitachi | Close | Power MOSFET | 400V N-Channel MOSFET, UniFET |
| Infineon (Siemens) Part | Status | Industry Part | Manufacturer | Description |
| SPD02N60C3 Buy | 2SK2059S Buy | Renesas | N-Channel MOSFETs (500V...900V) |
| Part | Similar Part | Notes |
| 2SK2059S Buy | STD1HNC60T4 Buy | |
| 2SK2059S Buy | STD1NK60T4 Buy |